CN114420543A - Method for cleaning single wafer - Google Patents
Method for cleaning single wafer Download PDFInfo
- Publication number
- CN114420543A CN114420543A CN202111682638.4A CN202111682638A CN114420543A CN 114420543 A CN114420543 A CN 114420543A CN 202111682638 A CN202111682638 A CN 202111682638A CN 114420543 A CN114420543 A CN 114420543A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning
- spraying
- cleaning solution
- pure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Abstract
The invention relates to a method for cleaning a single wafer, which comprises the following steps: placing a wafer to be cleaned in a cleaning tank, wherein the wafer is adsorbed and fixed through negative pressure provided by the bottom of the cleaning tank; spraying alkaline cleaning solution to the surface of the wafer; spraying pure water to the surface of the wafer; spraying an acid cleaning solution to the surface of the wafer; spraying pure water to the surface of the wafer; and drying the surface of the wafer, and detecting surface particles. Compared with the traditional cleaning process, the cleaning method abandons contact type mechanical clamping, and adopts non-contact type negative pressure adsorption fixation, thereby avoiding particle adhesion in the mechanical clamping process; the invention adopts a spray cleaning mode, thereby avoiding the wafer from being excessively etched by the cleaning solution in the cleaning process, and further saving the consumption of pure water in the cleaning process correspondingly.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for cleaning a single wafer.
Background
During the polishing process of the wafer, particles, oil stains, impurities or the like may be adsorbed, so that a chemical cleaning agent or a physical process is required to clean the surface of the wafer, and the adopted chemical cleaning agent may etch the surface of the wafer, so that a large amount of pure water is required to flush the surface of the wafer, thereby obtaining the wafer with a clean surface.
Disclosure of Invention
The invention aims to provide a method for cleaning a single wafer, aiming at the defects in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that:
the invention provides a method for cleaning a single wafer, which comprises the following steps:
s1, placing the wafer to be cleaned in a cleaning tank, wherein the wafer is adsorbed and fixed by negative pressure provided by the bottom of the cleaning tank;
s2, spraying alkaline cleaning solution on the surface of the wafer;
s3, spraying pure water to the surface of the wafer;
s4, spraying an acid cleaning solution to the surface of the wafer;
s5, spraying pure water to the surface of the wafer;
s6, drying the surface of the wafer, and detecting surface particles; if the detection result meets the preset requirement, the cleaning is finished, otherwise, the wafer is placed in the cleaning tank again, and the steps S2-S5 are repeated;
in steps S2 to S5, the liquid sprayed on the surface of the wafer is discharged through a liquid discharge tank provided at the bottom of the cleaning tank by the negative pressure provided at the bottom of the cleaning tank.
Preferably, in step S2, the alkaline cleaning solution is NH3·H2O、H2O2And H2And (3) mixed solution of O.
Preferably, the quality of the alkaline cleaning solution is matchedRatio of NH3·H2O:H2O2:H2O＝(1-3)：(1-3)：(10-30)。
Preferably, the temperature of the alkaline cleaning solution is 40-80 ℃, and the spraying time of the alkaline cleaning solution is 3-7 min.
Preferably, in step S3, the spraying time of the pure water is 1min to 3 min.
Preferably, in step S4, the acidic cleaning solution is HCl or H2O2And H2And (3) mixed solution of O.
Preferably, the mass ratio of the acidic cleaning solution is HCl to H2O2:H2O＝(1-3)：(1-3)：(20-40)。
Preferably, the temperature of the acidic cleaning solution is 10-50 ℃, and the spraying time of the alkaline cleaning solution is 3-7 min.
Preferably, in step S5, the spraying time of the pure water is 1min to 3 min.
By adopting the technical scheme, compared with the prior art, the invention has the following technical effects:
compared with the traditional cleaning process, the cleaning method abandons contact type mechanical clamping, and adopts non-contact type negative pressure adsorption fixation, thereby avoiding particle adhesion in the mechanical clamping process; the invention adopts a spray cleaning mode, thereby avoiding the wafer from being excessively etched by the cleaning solution in the cleaning process, and further saving the consumption of pure water in the cleaning process correspondingly.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention is further illustrated by the following examples, which are not to be construed as limiting the invention.
Example 1
The present embodiment provides a method for cleaning a single wafer, including:
s1, placing the wafer to be cleaned in a cleaning tank, wherein the wafer is adsorbed and fixed by negative pressure provided by the bottom of the cleaning tank;
s2, spraying alkaline cleaning solution to the surface of the wafer, wherein the alkaline cleaning solution is NH3·H2O、H2O2And H2The mixed solution of O and NH in mass ratio3·H2O:H2O2:H2O1: 1: 10; the temperature of the alkaline cleaning solution is 40 ℃, and the spraying time of the alkaline cleaning solution is 7 min;
s3, spraying pure water to the surface of the wafer, wherein the spraying time of the pure water is 3 min;
s4, spraying acidic cleaning solution to the surface of the wafer, wherein the acidic cleaning solution is HCl or H2O2And H2The mixed solution of O comprises HCl and H in mass ratio2O2:H2O1: 1: 20; the temperature of the acidic cleaning solution is 10 ℃, and the spraying time of the alkaline cleaning solution is 7 min;
s5, spraying pure water to the surface of the wafer, wherein the spraying time of the pure water is 3 min;
s6, drying the surface of the wafer, and detecting surface particles: the yield is 96%, and the roughness (Ra) is 0.11 μm;
in steps S2 to S5, the liquid sprayed on the surface of the wafer is discharged through a liquid discharge tank provided at the bottom of the cleaning tank by the negative pressure provided at the bottom of the cleaning tank.
Example 2
The present embodiment provides a method for cleaning a single wafer, including:
s1, placing the wafer to be cleaned in a cleaning tank, wherein the wafer is adsorbed and fixed by negative pressure provided by the bottom of the cleaning tank;
s2, spraying alkaline cleaning solution to the surface of the wafer, wherein the alkaline cleaning solution is NH3·H2O、H2O2And H2The mixed solution of O and NH in mass ratio3·H2O:H2O2:H2O ═ 1:1.5: 20; the temperature of the alkaline cleaning solution is 60 ℃, and the spraying time of the alkaline cleaning solution is 5 min;
s3, spraying pure water to the surface of the wafer, wherein the spraying time of the pure water is 2 min;
s4, spraying acidic cleaning solution to the surface of the wafer, wherein the acidic cleaning solution is HCl or H2O2And H2The mixed solution of O comprises HCl and H in mass ratio2O2:H2O1: 1: 30; the temperature of the acidic cleaning solution is 25 ℃, and the spraying time of the alkaline cleaning solution is 5 min;
s5, spraying pure water to the surface of the wafer, wherein the spraying time of the pure water is 2 min;
s6, drying the surface of the wafer, and detecting surface particles: the yield is 94%, and the roughness (Ra) is 0.12 μm;
in steps S2 to S5, the liquid sprayed on the surface of the wafer is discharged through a liquid discharge tank provided at the bottom of the cleaning tank by the negative pressure provided at the bottom of the cleaning tank.
Example 3
The present embodiment provides a method for cleaning a single wafer, including:
s1, placing the wafer to be cleaned in a cleaning tank, wherein the wafer is adsorbed and fixed by negative pressure provided by the bottom of the cleaning tank;
s2, spraying alkaline cleaning solution to the surface of the wafer, wherein the alkaline cleaning solution is NH3·H2O、H2O2And H2The mixed solution of O and NH in mass ratio3·H2O:H2O2:H2O1: 3: 30; the temperature of the alkaline cleaning solution is 80 ℃, and the spraying time of the alkaline cleaning solution is 3 min;
s3, spraying pure water to the surface of the wafer, wherein the spraying time of the pure water is 1 min;
s4, spraying acidic cleaning solution to the surface of the wafer, wherein the acidic cleaning solution is HCl or H2O2And H2The mixed solution of O comprises HCl and H in mass ratio2O2:H2O1: 1.5: 40; the temperature of the acidic cleaning solution is 40 ℃, and the spraying time of the alkaline cleaning solution is 3 min;
s5, spraying pure water to the surface of the wafer, wherein the spraying time of the pure water is 3 min;
s6, drying the surface of the wafer, and detecting surface particles: the yield was 95%, and the roughness (Ra) was 0.11. mu.m.
In steps S2 to S5, the liquid sprayed on the surface of the wafer is discharged through a liquid discharge tank provided at the bottom of the cleaning tank by the negative pressure provided at the bottom of the cleaning tank.
In conclusion, compared with the traditional cleaning process, the cleaning method of the invention abandons contact type mechanical clamping and adopts non-contact type negative pressure adsorption and fixation, thereby avoiding particle adhesion in the mechanical clamping process; the invention adopts a spray cleaning mode, thereby avoiding the wafer from being excessively etched by the cleaning solution in the cleaning process, and further saving the consumption of pure water in the cleaning process correspondingly.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (9)
1. A method for cleaning a single wafer, comprising:
s1, placing the wafer to be cleaned in a cleaning tank, wherein the wafer is adsorbed and fixed by negative pressure provided by the bottom of the cleaning tank;
s2, spraying alkaline cleaning solution on the surface of the wafer;
s3, spraying pure water to the surface of the wafer;
s4, spraying an acid cleaning solution to the surface of the wafer;
s5, spraying pure water to the surface of the wafer;
s6, drying the surface of the wafer, and detecting surface particles; if the detection result meets the preset requirement, the cleaning is finished, otherwise, the wafer is placed in the cleaning tank again, and the steps S2-S5 are repeated;
in steps S2 to S5, the liquid sprayed on the surface of the wafer is discharged through a liquid discharge tank provided at the bottom of the cleaning tank by the negative pressure provided at the bottom of the cleaning tank.
2. The cleaning method according to claim 1, wherein in step S2, the alkaline cleaning solution is NH3·H2O、H2O2And H2And (3) mixed solution of O.
3. The cleaning method according to claim 2, wherein the mass ratio of the alkaline cleaning solution is NH3·H2O:H2O2:H2O＝(1-3)：(1-3)：(10-30)。
4. The cleaning method according to claim 2, wherein the temperature of the alkaline cleaning solution is 40 ℃ to 80 ℃, and the spraying time of the alkaline cleaning solution is 3min to 7 min.
5. The cleaning method according to claim 1, wherein in step S3, the spraying time of the pure water is 1min to 3 min.
6. The cleaning method according to claim 1, wherein in step S4, the acidic cleaning solution is HCl or H2O2And H2And (3) mixed solution of O.
7. The cleaning method according to claim 6, wherein the acidic cleaning solution is HCl H2O2:H2O＝(1-3)：(1-3)：(20-40)。
8. The cleaning method according to claim 6, wherein the temperature of the acidic cleaning solution is 10 ℃ to 50 ℃, and the spraying time of the alkaline cleaning solution is 3min to 7 min.
9. The cleaning method according to claim 1, wherein in step S5, the spraying time of the pure water is 1min to 3 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111682638.4A CN114420543A (en) | 2021-12-31 | 2021-12-31 | Method for cleaning single wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111682638.4A CN114420543A (en) | 2021-12-31 | 2021-12-31 | Method for cleaning single wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114420543A true CN114420543A (en) | 2022-04-29 |
Family
ID=81272179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111682638.4A Pending CN114420543A (en) | 2021-12-31 | 2021-12-31 | Method for cleaning single wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114420543A (en) |
-
2021
- 2021-12-31 CN CN202111682638.4A patent/CN114420543A/en active Pending
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