CN114411114A - Coating device and carrying mechanism - Google Patents
Coating device and carrying mechanism Download PDFInfo
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- CN114411114A CN114411114A CN202111623488.XA CN202111623488A CN114411114A CN 114411114 A CN114411114 A CN 114411114A CN 202111623488 A CN202111623488 A CN 202111623488A CN 114411114 A CN114411114 A CN 114411114A
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- 230000007246 mechanism Effects 0.000 title claims abstract description 86
- 239000011248 coating agent Substances 0.000 title claims abstract description 20
- 238000000576 coating method Methods 0.000 title claims abstract description 20
- 230000000903 blocking effect Effects 0.000 claims abstract description 57
- 230000008859 change Effects 0.000 claims description 27
- 230000007423 decrease Effects 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000007888 film coating Substances 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 101100495270 Caenorhabditis elegans cdc-26 gene Proteins 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application discloses coating device and year thing mechanism should carry the thing mechanism and include: the carrier plate comprises a bearing surface for placing a product to be coated; the blocking mechanism is positioned on the periphery of the carrier plate, and a gap is formed between the blocking mechanism and the carrier plate; in the direction perpendicular to the bearing surface, the gap has a preset depth; in a direction parallel to the bearing surface, the gap has a preset width; the adjusting assembly is positioned in the gap and used for adjusting the preset depth and/or the preset width of the gap; the adjusting assembly is connected with the carrier plate and/or the blocking mechanism. The coating device and the carrying mechanism provided by the embodiment of the application can improve the flow field distribution in the reaction cavity of the coating device, so that the coating uniformity is improved.
Description
Technical Field
The application relates to the technical field of special equipment for photovoltaic/electronic industry, in particular to a film coating device and a loading mechanism.
Background
The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.
The heterojunction is a special PN junction, is formed by amorphous silicon and crystalline silicon materials, is an amorphous silicon film deposited on the crystalline silicon, and belongs to one of N-type batteries. Compared with the mainstream PERC (Passivated Emitter and Rear Cell) and TOPCON (Tunnel Oxide Passivated Contact) process flows, the process flow of the heterojunction battery is less, and only 4 steps are needed, namely etching cleaning, amorphous silicon film deposition, conductive film deposition and screen printing electrode.
Among them, the amorphous silicon thin film is mainly deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition). However, the coating uniformity of the coating apparatus for performing amorphous silicon thin film deposition in the prior art is not good.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions in the present specification and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present specification.
Disclosure of Invention
The technical problem that this application mainly solved provides a coating device and carries thing mechanism, can improve the flow field distribution in coating device's the reaction chamber to improve the coating uniformity.
In order to solve the technical problem, the application adopts a technical scheme that: providing a carrier mechanism comprising:
the carrier plate comprises a bearing surface for placing a product to be coated;
the blocking mechanism is positioned on the periphery of the carrier plate, and a gap is formed between the blocking mechanism and the carrier plate; in the direction perpendicular to the bearing surface, the gap has a preset depth; in a direction parallel to the bearing surface, the gap has a preset width;
the adjusting assembly is positioned in the gap and used for adjusting the preset depth and/or the preset width of the gap; the adjusting assembly is connected with the carrier plate and/or the blocking mechanism.
Further, the adjusting assembly comprises a plurality of first base plates, the first base plates are connected with the carrier plate or the blocking mechanism, and the first base plates can enable the preset width of the gap to change according to a preset rule.
Further, in the extending direction of the connection between the first pad and the carrier plate or the blocking mechanism, the first pad makes the preset width of the gap first decrease and then increase.
Further, one surface of the adjusting component facing the gap is convex.
Furthermore, the first base plate is connected with the carrier plate, and one side of the first base plate, which is far away from the carrier plate, is an arc-shaped wall surface which is bent towards one side of the first base plate, which is far away from the carrier plate.
Furthermore, the first base plate is connected with the blocking mechanism, and one side of the first base plate, which is close to the carrier plate, is an arc-shaped wall surface which is bent towards one side close to the carrier plate.
Further, in the extending direction of the connection part of the arc-shaped wall surface and the carrier plate or the blocking mechanism, the change of the radian of the arc-shaped wall surface is reduced first and then increased.
Furthermore, the adjusting assembly comprises a plurality of second base plates, the second base plates are connected with the carrier plate or the blocking mechanism, and the second base plates can enable the preset depth of the gap to change according to a preset rule.
Further, in the extending direction of the connection part of the second base plate and the carrier plate or the blocking mechanism, the second base plate increases and then decreases the preset depth of the gap.
Further, at least part of the second backing plate extends along the direction perpendicular to the bearing surface, and in the extending direction of the joint of the second backing plate and the carrier plate or the blocking mechanism, the thickness of the second backing plate extending along the direction perpendicular to the bearing surface is increased and then reduced.
Furthermore, the bearing surface is polygonal, the blocking mechanism comprises a plurality of baffles, and the number of the baffles is equal to the number of the edges of the bearing surface.
In order to solve the above technical problem, another technical solution adopted by the present application is: there is provided a coating device including the loading mechanism according to any one of the above embodiments. Different from the prior art, the beneficial effects of the application are that: according to the coating device and the loading mechanism provided by the embodiment of the application, the adjusting assembly is arranged in the gap between the support plate and the blocking mechanism, so that the preset depth and/or the preset width of the gap can be adjusted, the flow field distribution above the support plate can be improved by changing the preset depth and/or the preset width, the gas speed is uniformly changed and distributed, and the coating uniformity is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
fig. 1 is a schematic structural view of a first loading mechanism provided in the present embodiment;
FIG. 2 is a top view of FIG. 1;
fig. 3 is a schematic structural view of a second loading mechanism provided in the present embodiment;
FIG. 4 is a top view of FIG. 3;
fig. 5 is a schematic structural view of a third loading mechanism provided in the present embodiment;
FIG. 6 is a partial schematic view of FIG. 5;
FIG. 7 is a top view of FIG. 5;
fig. 8 is a schematic structural view of a fourth loading mechanism provided in the present embodiment;
FIG. 9 is a top view of FIG. 8;
fig. 10 is a partial structural view of a fifth carrying mechanism provided in the present embodiment;
fig. 11 is a schematic structural view of a coating apparatus according to the present embodiment;
fig. 12 is a schematic structural view of another coating device provided in this embodiment.
Description of reference numerals:
1. a carrier plate; 2. a blocking mechanism; 3. a gap; 4. a first backing plate; 41. an arc-shaped wall surface; 42. a plurality of sections of plane wall surfaces; 5. a second backing plate; 51. a first portion; 52. a second portion;
10. a carrying mechanism; 20. a spray plate; 30. a main body; 31. a reaction chamber; 40. a flow homogenizing plate; 100. provided is a film coating device.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In the prior art, deposition by PECVD requires the use of a coating apparatus, which generally comprises a sealed cavity, wherein a carrier plate for placing a product to be coated and a spray plate for spraying process gas to the product to be coated are disposed in the cavity. However, the speed of the process gas from the outlet of the shower plate to the carrier plate varies unevenly, especially at the edge portion of the carrier plate, the flow rate of the middle gas is large and the flow rates of the gases at the two ends are small. That is, the gas flow velocity on the diagonal line of the carrier plate is relatively low, the gas flow velocity on the center line of the carrier plate is relatively high, and the velocity variation above the whole carrier plate is unevenly distributed.
Accordingly, the present embodiment provides a loading mechanism 10, please refer to fig. 1 to 10. The carrier mechanism 10 comprises a carrier plate 1, a blocking mechanism 2 and an adjustment assembly.
The carrier plate 1 comprises a bearing surface for placing a product to be coated. The blocking mechanism 2 is located on the periphery of the carrier plate 1, and a gap 3 is formed between the blocking mechanism 2 and the carrier plate 1. The gap 3 has a predetermined depth in a direction perpendicular to the carrying surface. The gap 3 has a predetermined width in a direction parallel to the carrying surface. The adjustment assembly is located within the gap 3 for adjusting a preset depth and/or a preset width of the gap 3. The adjusting assembly is connected to the carrier plate 1 and/or the blocking means 2.
According to the loading mechanism 10 provided by the embodiment of the application, the adjusting assembly is arranged in the gap 3 between the support plate 1 and the blocking mechanism 2, so that the preset depth and/or the preset width of the gap 3 can be adjusted, the flow field distribution above the support plate 1 can be improved by changing the preset depth and/or the preset width, the gas speed change distribution is uniform, and the film coating uniformity is improved.
It should be noted that, the bearing surface in the present embodiment is parallel to the horizontal plane, so the direction perpendicular to the bearing surface is a vertical direction, and the direction parallel to the bearing surface is a horizontal direction. In other embodiments, the bearing surface may have a certain included angle with the horizontal plane, and the direction perpendicular to the bearing surface and the direction parallel to the bearing surface correspond to other directions, which is not limited in the present application.
In this embodiment, the carrying surface may be a polygon, that is, the carrier 1 is a polygon. The blocking mechanism 2 may comprise a plurality of blocking plates, and the number of the blocking plates is equal to the number of the sides of the polygonal bearing surface, so that each side of the carrier plate 1 may correspond to one blocking plate. The blocking mechanism 2 in this embodiment can block and guide the flow of the gas, and can also prevent the formation of eddy current around the carrier plate 1 to affect the uniformity of the coating on the edge of the carrier plate 1.
The embodiment is provided with the adjusting assembly, so that the distribution rule of the piezoresistance around the carrier plate 1 can be changed, and the gas passing capacity at each corner of the carrier plate 1 is improved. By changing both the preset width and the preset depth of the gap 3, the distribution of the gap 3 between the carrier plate 1 and the blocking means 2 can be changed.
In a preferred embodiment, the carrying surface is square, i.e. the carrier plate 1 has four sides. Correspondingly, there are four blocking mechanisms 2. The four blocking mechanisms 2 are respectively positioned at the periphery of the carrier plate 1. The adjusting assembly of the embodiment can change the distribution rule of the piezoresistance around the carrier plate 1 and improve the gas passing capacity at the four corners of the square.
In other embodiments, the carrying surface may be a polygon such as a triangle, a pentagon, a hexagon, etc., the number of the baffles is three, five, six, etc., and each side of the carrier plate 1 is correspondingly provided with one baffle.
In one embodiment, as shown in fig. 1 to 4, the adjusting assembly comprises a plurality of first pads 4, the first pads 4 being connected to the carrier plate 1 or the blocking mechanism 2. The first shim plate 4 enables the preset width of the gap 3 to be varied according to a predetermined rule, i.e. the shape of the first shim plate 4 is varied, thereby enabling the preset width of the gap 3 to be varied. The preset width of the gap 3 is changed, so that the flow field distribution above the carrier plate 1 can be improved, and the flow field distribution is uniform.
Specifically, in the extending direction of the connection of the first pad 4 and the carrier plate 1 or the blocking mechanism 2, the first pad 4 makes the preset width of the gap 3 decrease first and then increase. That is, the preset width of the gap 3 is small in the middle and large at both ends on the corresponding side where the first shim plate 4 is connected to the carrier plate 1 or the blocking mechanism 2.
More specifically, the upper surface of the first pad 4 and the upper surface of the carrier plate 1 are aligned. The minimum value of the preset width of the gap 3 can be 8-10 mm. The number of the first backing plates 4 can be four, and the first backing plates are respectively positioned at the periphery of the carrier plate 1 with four side surfaces. The embodiment has the advantages of low cost, capability of greatly improving the flow field distribution on the carrier plate 1 by adding the four first base plates 4, low cost and remarkable improvement effect.
In this embodiment, the surface of the adjusting component facing the gap is convex, the width of the gap 3 at the middle of the corresponding edge is smaller, and the width of the gap 3 at the edge is larger, so that the airflow resistance at the middle is larger, the gas circulation capacity at the middle is weakened, more gas flows pass through the edge regions at the corners of the support plate 1, and the gas flow velocity at the edge regions above the support plate 1 approaches the gas flow velocity at the middle region, thereby improving the flow field distribution and making the flow field distribution uniform.
As shown in fig. 1 and 2, the first pad 4 can be connected to the carrier plate 1, and the side of the first pad 4 away from the carrier plate 1 is an arc-shaped wall 41 that is curved towards the side away from the carrier plate 1. In this embodiment, the first pad 4 may be integrally disposed with the carrier plate 1, that is, the plane of the carrier plate 1 facing the shower plate 20 is extended, so as to greatly improve the flow field distribution, improve the uneven change of the flow field above the carrier plate 1 from the middle to each corner, and make the change of the flow field speed distribution uniformly change on the carrier plate 1.
As shown in fig. 3 and 4, the first pad 4 may be connected to the blocking mechanism 2, and the side of the first pad 4 close to the carrier plate 1 is an arc-shaped wall surface 41 bending to the side close to the carrier plate 1. In this embodiment, the first shim plate 4 may be provided integrally with the blocking mechanism 2. The first base plate 4 is connected with the blocking mechanism 2, the function of the first base plate 4 is consistent with that of the first base plate 4 connected with the carrier plate 1, the flow field distribution can be greatly improved, the condition that the flow field change above the carrier plate 1 is uneven from the middle to each corner is improved, and the flow field speed change distribution on the carrier plate 1 is also even.
In the present embodiment, the change rate of the curvature of the arcuate wall surface 41 is first decreased and then increased in the extending direction of the connection between the arcuate wall surface 41 and the carrier plate 1 or the stopper mechanism 2. That is, on the corresponding edge where the first backing plate 4 is connected to the carrier plate 1 or the blocking mechanism 2, the change rate of the arc degree of the arc-shaped wall surface 41 is small in the middle, and the change rates of the arc degree are large at the two ends, so that the arc-shaped wall surface 41 can increase the airflow resistance in the middle, weaken the gas circulation capacity in the middle, allow more gas flow to pass through the edge areas at the corners of the carrier plate 1, and promote the gas flow velocity in the edge areas above the carrier plate 1 to approach the gas flow velocity in the middle area, thereby improving the flow field distribution and making the flow field distribution uniform.
In other embodiments, as shown in fig. 3 and 4, the arc-shaped wall surface 41 can be replaced by a plurality of sections of plane wall surfaces 42, and it is only necessary to ensure that the preset width of the gap 3 is first decreased and then increased in the extending direction of the connection between the first pad 4 and the carrier plate 1 or the blocking mechanism 2. As shown in fig. 4, the orthographic projection of the multiple sections of plane wall surfaces 42 on the bearing surface is multiple straight lines. In the extending direction of the connection between the multi-stage plane wall surface 42 and the carrier plate 1 or the blocking mechanism 2, the slope of the multi-stage straight line is first decreased and then increased.
In this embodiment, by providing the first pad 4 with the arc-shaped wall surface 41 or other wall surface with a changed shape, the edge shape change of the gap 3 can be changed, specifically, the preset width of the gap 3 is reduced from the middle of the edge side length to the end point of the edge side length in a certain proportion, the width change of the gap 3 through which the gas flows is controlled, and the distribution of the pressure resistance is changed, so that the gas flow rate flowing out from each side of the square carrier plate 1 is relatively uniform, and the flow field above the square carrier plate 1 is promoted to be uniformly changed.
In another embodiment, as shown in fig. 5 to 9, the adjusting assembly may comprise a plurality of second pads 5, the second pads 5 being connected to the carrier plate 1 or the blocking means 2. The second shim plate 5 enables the preset depth of the gap 3 to be varied according to a predetermined rule, i.e. the shape of the second shim plate 5 is varied, thereby enabling the preset depth of the gap 3 to be varied. The preset depth change of the gap 3 can control the preset depth change of the gas flowing through the gap 3, thereby changing the edge piezoresistive distribution of the carrier plate 1, improving the phenomenon that the velocity on the diagonal is lower, and further ensuring that the velocity change distribution of the gas is approximate to uniformity.
Specifically, in the extending direction of the connection of the second shim plate 5 and the carrier plate 1 or the blocking mechanism 2, the second shim plate 5 increases and then decreases the preset depth of the gap 3. That is, the preset depth of the gap 3 is large in the middle and small at both ends on the corresponding side where the second shim plate 5 is connected with the carrier plate 1 or the blocking mechanism 2.
In the present embodiment, at least a portion of the second shim plate 5 extends in a direction perpendicular to the bearing surface. The second shim plate 5 may comprise a first portion 51 extending in a direction perpendicular to the bearing surface and a second portion 52 for connecting the first portion 51 with the carrier plate 1 or the blocking mechanism 2. The upper surface of the second portion 52 may be aligned with the upper surface of the carrier plate 1.
The second part 52 is perpendicular to the first part 51, and the end of the second part 52 remote from the first part 51 is fixed to the carrier plate 1 or the blocking mechanism 2. As shown in fig. 5, 6 and 7, the end of the second part 52 remote from the first part 51 is fixed to the carrier plate 1. As shown in fig. 8 and 9, the end of the second part 52 remote from the first part 51 is fixed to the blocking mechanism 2.
In particular, the thickness of the first portion 51 increases and then decreases in the direction of extension of the connection of the second shim plate 5 with the carrier plate 1 or the blocking means 2. That is, the first portion 51 has a large thickness in the middle and small ends on the corresponding side where the second mat 5 is connected to the carrier plate 1 or the blocking means 2. In the vertical direction, the first portion 51 is thicker in the middle and thinner at the edges, and the thickness of the first portion 51 is the preset depth of the gap 3.
In the present embodiment, the thickness of each side is controlled to change regularly by changing the thickness change of the edge of the first portion 51 of the second pad 5, the preset depth change of the gas flowing through the gap 3 is controlled, the piezoresistive distribution of the edge of the carrier plate 1 is changed, the phenomenon of lower velocity on the diagonal is improved, and the velocity change distribution of the gas is further made to be approximately uniform.
In other embodiments, as shown in fig. 10, the loading mechanism 10 can be provided with the first mat 4 and the second mat 5 at the same time, and the first mat 4 can be used as the second portion 52 of the second mat 5. In this embodiment, two changes, i.e., the shape change and the thickness change, of the adjusting component on the peripheral side of the carrier plate 1 can be controlled simultaneously, the preset width and the preset thickness of the gap 3 are changed, and the distribution of the piezoresistance is changed, so that the gas velocity change is distributed uniformly. Specifically, the distribution of the piezoresistance at the edge of the carrier plate 1 can be changed, the phenomenon of low velocity on the diagonal can be improved, and the gas velocity change distribution is close to uniform; and the airflow resistance at the middle is increased, the gas circulation capacity at the middle is weakened, more gas flow passes through the edge areas at each corner of the carrier plate 1, and the gas flow velocity of each edge area above the carrier plate 1 is promoted to approach the gas flow velocity of the middle area, so that the flow field distribution can be improved, and the flow field distribution is uniform.
Please refer to fig. 11 and 12. The embodiment of the present application further provides a film coating device 100, which includes the loading mechanism 10 as described in any one of the above embodiments. The present application is not described in detail herein with respect to the carrier mechanism 10. It should be noted that the coating apparatus 100 of the present embodiment has all the technical effects of the loading mechanism 10, and can solve the corresponding technical problems, and specific details of the present application are not repeated herein.
As shown in fig. 11 and 12, the plating device 100 may further include a main body 30 and a shower plate 20. The main body 30 has a reaction chamber 31 therein, and the loading mechanism 10 is located in the reaction chamber 31. The shower plate 20 is located in the reaction chamber 31, and the outlet of the shower plate 20 faces the carrier plate 1. Preferably, a flow equalizing plate 40 may be further disposed on a side of the shower plate 20 opposite to the carrier plate 1 in the reaction chamber 31, so that the process gas may be subjected to a first flow equalizing before entering the shower plate 20.
It should be noted that, in the description of the present specification, the terms "first", "second", and the like are used for descriptive purposes only and for distinguishing similar objects, and no order is present therebetween, and no indication or suggestion of relative importance is to be made. Further, in the description of the present specification, "a plurality" means two or more unless otherwise specified.
Any numerical value recited herein includes all values from the lower value to the upper value, in increments of one unit, provided that there is a separation of at least two units between any lower value and any higher value. For example, if it is stated that the number of a component or a value of a process variable (e.g., temperature, pressure, time, etc.) is from 1 to 90, preferably from 20 to 80, and more preferably from 30 to 70, it is intended that equivalents such as 15 to 85, 22 to 68, 43 to 51, 30 to 32 are also expressly enumerated in this specification. For values less than 1, one unit is suitably considered to be 0.0001, 0.001, 0.01, 0.1. These are only examples of what is intended to be explicitly recited, and all possible combinations of numerical values between the lowest value and the highest value that are explicitly recited in the specification in a similar manner are to be considered.
Unless otherwise indicated, all ranges include the endpoints and all numbers between the endpoints. The use of "about" or "approximately" with a range applies to both endpoints of the range. Thus, "about 20 to about 30" is intended to cover "about 20 to about 30", including at least the endpoints specified.
The term "consisting essentially of …" describing a combination shall include the identified element, ingredient, component or step as well as other elements, ingredients, components or steps that do not materially affect the basic novel characteristics of the combination. The use of the terms "comprising" or "including" to describe combinations of elements, components, or steps herein also contemplates embodiments that consist essentially of such elements, components, or steps. By using the term "may" herein, it is intended to indicate that any of the described attributes that "may" include are optional.
A plurality of elements, components, parts or steps can be provided by a single integrated element, component, part or step. Alternatively, a single integrated element, component, part or step may be divided into separate plural elements, components, parts or steps. The disclosure of "a" or "an" to describe an element, ingredient, component or step is not intended to foreclose other elements, ingredients, components or steps.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (12)
1. An article carrying mechanism, comprising:
the carrier plate comprises a bearing surface for placing a product to be coated;
the blocking mechanism is positioned on the periphery of the carrier plate, and a gap is formed between the blocking mechanism and the carrier plate; in the direction perpendicular to the bearing surface, the gap has a preset depth; in a direction parallel to the bearing surface, the gap has a preset width;
the adjusting assembly is positioned in the gap and used for adjusting the preset depth and/or the preset width of the gap; the adjusting assembly is connected with the carrier plate and/or the blocking mechanism.
2. The carrier mechanism of claim 1, wherein the adjustment assembly includes a plurality of first pads, the first pads being connected to the carrier plate or the blocking mechanism, the first pads being capable of varying the predetermined width of the gap according to a predetermined rule.
3. The carrier mechanism of claim 2, wherein the first pad causes the predetermined width of the gap to decrease and then increase in a direction of extension of a connection of the first pad with the carrier or the blocking mechanism.
4. The carrier mechanism of claim 1, wherein a face of the adjustment assembly facing the gap is convex.
5. The carrier mechanism of claim 2, wherein the first pad is connected to the carrier plate, and a side of the first pad away from the carrier plate is an arc-shaped wall surface that is curved toward a side away from the carrier plate.
6. The carrier mechanism of claim 2, wherein the first pad is coupled to the blocking mechanism, and a side of the first pad adjacent to the carrier is an arc-shaped wall that is curved toward a side adjacent to the carrier.
7. The loading mechanism as claimed in claim 5 or 6, wherein the curvature change rate of the curved wall surface is decreased and then increased in the extending direction of the connection between the curved wall surface and the carrier plate or the blocking mechanism.
8. The carrier mechanism of claim 1 or 2, wherein the adjustment assembly comprises a plurality of second pads, the second pads being connected to the carrier plate or the blocking mechanism, the second pads being capable of causing the predetermined depth of the gap to vary according to a predetermined rule.
9. The carrier mechanism of claim 8, wherein the second pad increases and then decreases the predetermined depth of the gap in a direction extending from a connection of the second pad with the carrier plate or the blocking mechanism.
10. The carrier mechanism of claim 9, wherein at least some of the second pads extend in a direction perpendicular to the load-supporting surface, and wherein the second pads extend in a direction perpendicular to the load-supporting surface in a direction that extends at the junction of the second pads and the carrier plate or the blocking mechanism, the second pads increase in thickness and then decrease in thickness.
11. The carrier mechanism of claim 1, wherein the bearing surface is polygonal and the blocking mechanism comprises a number of baffles equal to the number of sides of the bearing surface.
12. A coating device comprising the loading mechanism according to any one of claims 1 to 11.
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| CN202111623488.XA CN114411114B (en) | 2021-12-28 | 2021-12-28 | Coating device and carrying mechanism |
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| CN202111623488.XA CN114411114B (en) | 2021-12-28 | 2021-12-28 | Coating device and carrying mechanism |
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| CN114411114B CN114411114B (en) | 2023-09-01 |
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Cited By (1)
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| CN116970916A (en) * | 2023-09-22 | 2023-10-31 | 新美光(苏州)半导体科技有限公司 | Coating tool and process |
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| CN114411114B (en) | 2023-09-01 |
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Address after: No. 27 Changjiang South Road, Xinwu District, Wuxi City, Jiangsu Province, China Patentee after: Jiangsu micro nano technology Co.,Ltd. Address before: 214000 No. 11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiangsu micro nano technology Co.,Ltd. |