CN114388664A - 一种提高GaN基发光器件光电转化效率的生长方法 - Google Patents
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Abstract
本发明公开了一种提高GaN基发光器件光电转化效率的生长方法,本发明通过在n型层和多量子阱层之间生长应力调控层和电导率调控层,控制氮化物半导体材料在电导率调控层的V形坑平台和侧壁的组分、厚度或掺杂浓度,使电导率调控层V形坑平台和侧壁电导率不同,调控电子在V形坑附近的输运途径。本发明通过调整V形坑平台和侧壁的厚度或掺杂浓度来调控其电导率,不引入新的制造工序,不增加LED的制造成本且不影响制造的合格率来调控载流子在有源区的输运途径,从而提高GaN基LED的发光效率和可靠性。
Description
技术领域
本发明涉及氮化物半导体材料制备技术领域,尤其是涉及一种提高GaN基发光器件光电转化效率的生长方法。
背景技术
作为第三代宽禁带半导体材料,III 族氮化物由于在光电子等领域有重大的应用前景,与之相关的材料生长和器件研制近年来受到了广泛的关注,并取得了长足的发展。InN、GaN、AlN 及其合金都是属于直接带隙半导体材料,覆盖了从红光到紫外的波段,可用于制作发光二极管、激光器、探测器和太阳能电池等,在全色显示、白光照明、高密度、存储、紫外探测等方面有广泛的应用。
随着其相关器件的应用的不断深入,对器件性能的要求也越来越高。发光效率是光电器件的一个重要性能指标,提高器件的光电转化效率符合节能减排的时代特征。对于III 族氮化物来说,位错是影响器件性能的重要因素。为了提高GaN基发光器件的光电转化效率,一种方法是减少位错,但由于目前常用的衬底与氮化物半导体材料之间的晶格失配和热失配而使得位错密度减少有限。另一种方法是采用V形坑来屏蔽位错,以此减少位错带来的性能恶化。然而V形坑是沿着位错开启,其本身是一种天然的漏电通道,载流子在V形坑附近的输运非常复杂,因此如何调控氮化物半导体器件位错附近载流子的输运途径是提高GaN基发光器件光电转化效率和可靠性的关键。
发明内容
本发明的目的在于提供一种提高GaN基发光器件光电转化效率的生长方法。
本发明的目的是这样实现的:
一种提高GaN基发光器件光电转化效率的生长方法,特征是:在n型层和多量子阱层之间的位错端开启V形坑,生长应力调控层;升高温度,减小生长速率,在应力调控层上面生长电导率调控层,控制氮化物半导体材料在电导率调控层的V形坑平台和侧壁的组分、厚度或掺杂浓度,使电导率调控层的V形坑平台和侧壁电导率不同,从而调控电子在V形坑附近的输运途径。
所述应力调控层与电导率调控层的生长温度不一致,应力调控层的生长温度在800-1000度之间,电导率调控层的生长温度在850-1050度,电导率调控层的生长温度比应力调控层的生长温度高。
所述应力调控层与电导率调控层的生长速率不一致,应力调控层的生长速率在1-1.5A/s之间,电导率调控层的生长速率在0.01-0.05A/s之间。
所述应力调控层生长时掺Si,生长电导率调控层时不掺Si。
所述电导率调控层的V形坑平台和侧壁的氮化物半导体材料为AlxGa1-xN,其中0≤x≤1。
所述电导率调控层的V形坑平台和侧壁的氮化物半导体材料生长的厚度比值为r,其中0≤r≤0.3。
所述电导率调控层的V形坑平台和侧壁的氮化物半导体材料的掺杂和生长速率同时调控。
本发明通过在n型层和多量子阱层之间生长应力调控层和电导率调控层,控制氮化物半导体材料在电导率调控层的V形坑平台和侧壁的组分、厚度或掺杂浓度而使电导率调控层的V形坑平台和侧壁电导率不同,从而调控电子在V形坑附近的输运途径,其原理如下:在低温下生长AlxGa1-xN(0≤x≤1)的时候,沿着位错产生大量的V形坑,生长应力调控层;升高温度,关闭SiH4,减小生长速率,在应力调控层上面生长电导率调控层,使得电导率调控层的V形坑平台区生长速率慢,甚至不生长,V形坑侧壁生长形成高阻区,调控电子从V形坑平台区注入到量子阱复合发光,同时减小漏电流,从而提高GaN基发光器件光电转化效率和可靠性。
本发明的优点为:通过调整电导率调控层V形坑平台和侧壁的厚度或掺杂浓度这些生长工艺来调控电导率调控层的V形坑平台和侧壁电导率,获得电子在氮化物发光器件V型坑附近的不同输运途径,提高GaN基LED器件的发光效率和可靠性,无需额外的制造工序,不增加器件的制造成本,不影响芯片制造的合格率。
附图说明
图1为本发明GaN基LED结构示意图。
具体实施方式
为了使本发明的目的、技术方案以及优点更加的清楚明了,以下具体实施例结合附图对本发明进行详细说明。应当理解,以下所述的实施案例仅仅用于解释发明,并不是限定发明。
实施例1:
一种提高GaN基发光器件光电转化效率的生长方法,具体步骤如下:
1)在n型GaN层000之上生长低温AlGaN应力调控层100,沿位错001开启V形坑,生长速率1A/s,温度为975℃,掺Si浓度为1×1018;
2)在生长应力调控层100的上面生长电导率调控层200,升高温度到1000℃,关闭SiH4,AlGaN在V形坑平台201生长速率0.01A/s,AlGaN在V形坑平台201生长10A,Al组分10%,AlGaN在V形坑侧壁202生长100A,Al组分为20%;
3)在生长电导率调控层200的上面生长InGaN/GaN超晶格300,周期为5nm/2nm,共24个周期;
4)在InGaN/GaN超晶格300的上面生长InGaN/GaN量子阱400,周期为3nm/10nm,共8个周期;
5)在InGaN/GaN量子阱400的上面生长所述p型GaN层500,掺Mg浓度为2×1020,厚度为1000A;
6)升温到1040度,载气为氢气,在p型GaN层500的上面生长GaN V坑合并层600,不掺Mg;
7)降温至1030度,在GaN V坑合并层600的上面生长轻掺GaN层700,生长速率为0.5A/s,掺Mg浓度为2×1019;
8)在轻掺GaN层700的上面生长p层接触层800,生长速率为0.25A/s,掺Mg浓度为2×1020;
9)降温至室温,将GaN基LED从MOCVD设备中取出。
实施例2:
一种提高GaN基发光器件光电转化效率的生长方法,具体步骤如下:
1)在n型GaN层000之上生长低温GaN应力调控层100,沿位错001开启V形坑,生长速率为1A/s,温度为950℃,掺Si浓度为5×1018;
2)在生长应力调控层100的上面生长电导率调控层200,升高温度到975℃,减少TMGa的流量,关掉SiH4,GaN在V形坑平台201上生长速率为0.01A/s,GaN在V形坑平台201生长10A,GaN在V形坑侧壁202生长100A;
3)在生长电导率调控层200的上面生长InGaN/GaN超晶格300,周期为5nm/2nm,共24个周期;
4)在InGaN/GaN超晶格300的上面生长InGaN/GaN量子阱400,周期为3nm/10nm,共8个周期;
5)在InGaN/GaN量子阱400的上面生长所述p型GaN层500,掺Mg浓度为2×1020,厚度为1000A;
6)升温到1040度,载气为氢气,在p型GaN层500的上面生长GaN V坑合并层600,不掺Mg;
7)降温至1030度,在GaN V坑合并层600的上面生长轻掺GaN层700,生长速率为0.5A/s,掺Mg浓度为2×1019;
8)在轻掺GaN层700的上面生长p层接触层800,生长速率为0.25A/s,掺Mg浓度为2×1020;
9)降温至室温,将GaN基LED从MOCVD设备中取出。
以上制作实例为本发明的一般实施方案,制作方法上实际可采用的制作方案是很多的,凡依本发明的权利要求所做的均等变化与装饰,均属于本发明的涵盖范围。
Claims (7)
1.一种提高GaN基发光器件光电转化效率的生长方法,其特征在于:在n型层和多量子阱层之间的位错端开启V形坑,生长应力调控层;升高温度,减小生长速率,在应力调控层上面生长电导率调控层,控制氮化物半导体材料在电导率调控层的V形坑平台和侧壁的组分、厚度或掺杂浓度,使电导率调控层的V形坑平台和侧壁电导率不同,从而调控电子在电导率调控层的V形坑附近的输运途径。
2.根据权利要求1所述的提高GaN基发光器件光电转化效率的生长方法,其特征在于:所述应力调控层与电导率调控层的生长温度不一致,应力调控层的生长温度在800-1000度之间,电导率调控层的生长温度在850-1050度之间,电导率调控层的生长温度比应力调控层的生长温度高。
3.根据权利要求1所述的提高GaN基发光器件光电转化效率的生长方法,其特征在于:所述应力调控层与电导率调控层的生长速率不一致,应力调控层的生长速率在1-1.5A/s之间,电导率调控层的生长速率在0.01-0.05A/s之间。
4.根据权利要求1所述的提高GaN基发光器件光电转化效率的生长方法,其特征在于:所述应力调控层生长时掺Si,生长电导率调控层时不掺Si。
5.根据权利要求1所述的提高GaN基发光器件光电转化效率的生长方法,其特征在于:所述电导率调控层的V形坑平台和侧壁的氮化物半导体材料为AlxGa1-xN,其中0≤x≤1。
6.根据权利要求1所述的提高GaN基发光器件光电转化效率的生长方法,其特征在于:所述电导率调控层的V形坑平台和侧壁的氮化物半导体材料生长的厚度比值为r,其中0≤r≤0.3。
7.根据权利要求1所述的提高GaN基发光器件光电转化效率的生长方法,其特征在于:所述电导率调控层的V形坑平台和侧壁的氮化物半导体材料的掺杂和生长速率同时调控。
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