CN114378731A - Diamond grinding wheel disc for sapphire thinning and preparation method thereof - Google Patents
Diamond grinding wheel disc for sapphire thinning and preparation method thereof Download PDFInfo
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- CN114378731A CN114378731A CN202210085250.4A CN202210085250A CN114378731A CN 114378731 A CN114378731 A CN 114378731A CN 202210085250 A CN202210085250 A CN 202210085250A CN 114378731 A CN114378731 A CN 114378731A
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- grinding wheel
- diamond grinding
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- powder
- sapphire
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- 238000000227 grinding Methods 0.000 title claims abstract description 132
- 239000010432 diamond Substances 0.000 title claims abstract description 124
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 124
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 35
- 239000010980 sapphire Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000011324 bead Substances 0.000 claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 28
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 23
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 41
- 238000005245 sintering Methods 0.000 claims description 28
- 239000012188 paraffin wax Substances 0.000 claims description 18
- 239000003292 glue Substances 0.000 claims description 15
- 239000012298 atmosphere Substances 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 238000007873 sieving Methods 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- 239000011812 mixed powder Substances 0.000 claims description 5
- 239000008187 granular material Substances 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000008188 pellet Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 27
- 238000011049 filling Methods 0.000 abstract description 10
- 238000005469 granulation Methods 0.000 abstract description 3
- 230000003179 granulation Effects 0.000 abstract description 3
- 239000011230 binding agent Substances 0.000 abstract description 2
- 239000012634 fragment Substances 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000012300 argon atmosphere Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000007872 degassing Methods 0.000 description 8
- 238000005238 degreasing Methods 0.000 description 8
- 238000010010 raising Methods 0.000 description 8
- 230000002194 synthesizing effect Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000004615 ingredient Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
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- 238000010292 electrical insulation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
Abstract
The invention discloses a diamond grinding wheel disk for thinning sapphire and a preparation method thereof, wherein the diamond grinding wheel disk consists of an aluminum substrate and diamond grinding wheel teeth, wherein the diamond grinding wheel teeth are prepared from the following raw materials in percentage by mass: diamond micro powder: 4-10%, copper-tin powder: 75-87%, tin powder: 3-9%, hollow glass beads: 5 to 15 percent; the diamond micro powder is selected from a second type material or a third type material, and the particle size of the diamond micro powder is 35-46 mu m; the invention adopts the medium-strength diamond micro powder and the special intermetallic compound binder to be evenly mixed, the mixture is made into the diamond grinding wheel teeth with certain structural strength under the action of certain temperature and pressure after granulation and die filling, and the diamond grinding wheel teeth are fixed on the aluminum substrate to be made into the diamond grinding wheel disk, and the obtained diamond grinding wheel disk has high sharpness, low scratch, low fragment rate and long service life.
Description
Technical Field
The invention relates to a diamond grinding wheel disk for thinning sapphire and a preparation method thereof, belonging to the field of manufacturing of grinding tools.
Background
Sapphire crystal (alpha-A1)2O3) The crystal material is a multifunctional crystal material integrating excellent optical, physical and chemical properties, has the advantages of high hardness, high melting point, good light transmittance, excellent electrical insulation, good thermal conductivity, stable chemical property and the like, and has wide application in the fields of photoelectrons, microelectronics, national defense, superconduction and the like. With the rapid development of science and technology, LED products are more and more widely used in daily life, and have the advantages of small volume, low power consumption, low heat productivity, shock resistance, long service life, high photoelectric conversion efficiency, monochromatic light emission, fast reaction speed, and the like. By coating on sapphire (alpha-A1)2O3) Blue LEDs can be manufactured by growing a GaN film on a substrate, so that LEDs of various colors can be produced after being matched with red and yellow LEDs which are used previously. However, since it is very difficult to prepare GaN thin films alone, it is necessary to grow thin films on other substrate materials (sapphire, silicon carbide, silicon, magnesium oxide, zinc oxide) by a vapor-phase chemical deposition method, and sapphire has been used as the most important substrate material because of its small lattice mismatch coefficient between C-direction sapphire and GaN and its superior light transmittance.
However, the C-direction sapphire crystal material has high hardness (mohs 9.2) and large brittleness, and is typically a hard and brittle material which is extremely difficult to process. The traditional production and processing mode of optical glass has the problems of unstable processing precision and surface quality, low processing efficiency, high processing cost and the like when processing sapphire. After the substrate material is epitaxial (epitaxial wafer), most of sapphire needs to be removed in the process of processing the substrate material into a chip, and then the required LED chip can be cut. A large amount of removals of epitaxial wafer back sapphire generally adopt diamond grinding wheel disc grinding to get rid of at present, but diamond grinding wheel processing sapphire causes heavier mar and fragmentation rate for subsequent artifical check-out time overlength, whole yields is low, and the comprehensive processing cost is too high at present. The diamond granularity is reduced, and the problems of insufficient sharpness, easy blockage in processing, short service life and the like exist when the consolidated diamond grinding wheel is used for processing sapphire.
Disclosure of Invention
Aiming at the defects of the conventional sapphire epitaxial wafer back thinning processing technology, the invention aims to provide the diamond grinding wheel for sapphire thinning and the preparation method thereof.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention relates to a diamond grinding wheel disk for thinning sapphire, which consists of an aluminum substrate and diamond grinding wheel teeth, wherein the diamond grinding wheel teeth are prepared from the following raw materials in percentage by mass: diamond micro powder: 4-10%, copper-tin powder: 75-87%, tin powder: 3-9%, hollow glass beads: 5 to 15 percent; the diamond micro powder is selected from a second type material or a third type material, and the particle size of the diamond micro powder is 35-46 mu m.
In a preferred scheme, the raw materials of the diamond grinding wheel teeth comprise the following components in percentage by mass: diamond micro powder: 4-6%, copper-tin powder: 77-81%, tin powder: 4-8%, hollow glass beads: 8 to 12 percent.
In the raw materials of the diamond grinding wheel teeth, the diamond micro powder is selected from a second type material or a third type material, the second type material or the third type material can provide medium strength, and the diamond micro powder can be combined with the grain diameter to ensure that a grinding wheel disc has high sharpness, the sapphire epitaxial wafer back thinning processing can not generate a heavy damage layer, in addition, the hollow glass beads are added into the raw materials of the invention, the brittleness of the grinding wheel can be improved to a certain extent, the grinding surface is uniformly broken and falls off in the grinding process of the diamond grinding wheel, new diamond particles are continuously generated, the self-sharpening of the working surface is realized, the diamond grinding wheel is ensured to be always kept in a sharp state, the grinding efficiency of the epitaxial wafer is improved, in addition, a small amount of tin powder is added, so that the sintering temperature of the diamond grinding wheel teeth is reduced, the sintering time is shortened, the damage of the temperature to the diamond is reduced, the sharpness of the diamond grinding wheel is improved, and the service life of the diamond grinding wheel is prolonged.
In a preferred embodiment, in the copper-tin powder, by atomic ratio: cu: sn 1.5-2.5: 1.
preferably, the particle size of the hollow glass beads is 10-30 μm, and the softening point temperature of the hollow glass beads is above 650 ℃.
The inventor finds that the particle size of the hollow glass beads has certain influence on the performance of the diamond grinding wheel, if the particle size of the hollow glass beads is too large, the mechanical property of grinding wheel teeth is obviously reduced, and the service life of the grinding wheel is greatly shortened; if the particle size is too small, the pores are too small, and the fallen diamond and the abraded abrasive dust cannot be hidden in the pores, so that the sharpness of the grinding wheel is poor, and the sapphire surface is scratched.
The invention relates to a preparation method of a diamond grinding wheel disk for thinning sapphire, which comprises the following steps:
the diamond grinding wheel tooth glue is embedded and adhered on an aluminum matrix, and a diamond grinding wheel disc is obtained after solidification.
Preferably, the mixing is carried out in a V-shaped mixer, and the ball-material ratio is 1: 3-5, the rotating speed is 20-25rpm, and the time is 24-36 h. .
Preferably, the forming agent is paraffin, and the addition amount of the paraffin is 5-8w t% of the mass of the mixed powder.
Further preferably, the paraffin is heated to 70-80 ℃ to obtain paraffin liquid, then the paraffin liquid is added into the mixed powder and is uniformly stirred, extruded and sieved, and dried to obtain granules.
Preferably, the particle size of the granules is 300-500 μm.
Preferably, the sintering is performed in a protective atmosphere, and the sintering process is as follows: the temperature is raised to 450 ℃ for heat preservation for 20-40min, and then raised to 600 ℃ for heat preservation for 10-30min, and the sintering pressure is 5-10 MPa.
According to the preparation method, after the raw materials are granulated, the raw materials are sintered at low pressure in a protective atmosphere, and the inventor finds that the low-density diamond and graphite are not easy to separate from the high-density metal powder after granulation, so that component segregation is avoided, the granules after granulation have better fluidity and more uniform die filling, and finally the compact diamond grinding wheel disc is obtained after low-pressure sintering.
In the invention, the glue used for inlaying and bonding the diamond grinding wheel tooth glue on the aluminum substrate is AB mixed type epoxy resin glue, and AB mixed type epoxy resin glue produced by 3M company is adopted in the actual operation process.
Advantageous effects
1. According to the invention, the medium-strength diamond is used as an abrasive material to ensure high sharpness and weak scratching force of the diamond grinding wheel disc, and high-efficiency, low-damage and high-quality processing of the sapphire substrate is realized.
2. In the preparation process of the diamond grinding wheel disk, the brittleness of the grinding wheel can be improved to a certain extent by adding the hollow glass beads into the binder of the diamond grinding wheel, the grinding surface of the diamond grinding wheel is uniformly broken and falls off in the grinding process, new diamond particles are continuously generated, the self-sharpening of the working surface is realized, the diamond grinding wheel is ensured to be always kept in a sharp state, and the grinding efficiency of epitaxial wafers is improved.
3. In the preparation process of the novel diamond grinding wheel, inert atmosphere low-pressure sintering conditions are adopted, and low-melting-point tin powder is added, so that the sintering temperature of the grinding wheel is reduced, the sintering time is shortened, the damage of the temperature to diamond is reduced, the sharpness of the diamond grinding wheel is improved, and the service life of the diamond grinding wheel is prolonged.
4. The preparation method can greatly reduce the rejection rate in the back thinning processing of the sapphire epitaxial wafer, reduce the manual inspection cost and the subsequent polishing cost of the whole process, greatly reduce the comprehensive processing cost of the sapphire epitaxial wafer and reduce the manufacturing cost of the LED chip.
Drawings
Fig. 1 is a diagram showing a sample of a diamond grinding wheel in example 1 of the present invention.
Detailed Description
Example 1
The implementation process comprises the following steps:
1. preparing powder mixture according to the proportion of the table components, mixing for 24 hours in a V-shaped blender at the speed of 20rpm and the ball-material ratio of 1:5 to prepare uniform powder mixture,
| components | Diamond micropowder | Hollow glass bead | Copper tin powder | Tin powder |
| Mass percent | 5ωt.％ | 10ωt.％ | 81ωt.％ | 4ωt.％ |
The diamond micro powder is a three-type material, the particle size range is 35-40 mu m, the particle size range of the hollow glass bead is 10-30 mu m, and in the copper-tin powder, the ratio of copper: tin is 2: 1.
2. and adding 5 omega t.% paraffin forming agent into the powder mixture, uniformly stirring, sieving, granulating, and filling into a graphite mold.
3. Placing the loaded mould into argon atmosphere, keeping the temperature at 300 ℃ for 40min, degassing, degreasing, raising the temperature to 550 ℃ and keeping the temperature for 30min, and reacting, synthesizing and sintering under the pressure of 6MPa in the sintering atmosphere. And cooling to obtain the diamond grinding wheel teeth.
4. And flatly grinding the grinding wheel teeth to a certain size, inlaying and adhering the grinding wheel teeth to an aluminum substrate by using AB type epoxy resin glue, and curing for 24 hours to obtain the diamond grinding wheel disc.
The performance of the superhard diamond grinding wheel prepared by the method is tested, and the test result is shown in table 1.
Example 2:
the implementation process comprises the following steps:
1. powder mixtures were prepared according to the ratio of the ingredients in the table below and mixed in a V-blender at a ball to feed ratio of 1:5 and 20rpm for 24h to prepare a homogeneous powder mixture.
| Components | Diamond micropowder | Hollow glass bead | Copper tin powder | Tin powder |
| Mass percent | 5ωt.％ | 10ωt.％ | 79ωt.％ | 6ωt.％ |
The diamond micro powder is a three-type material, the particle size range is 35-40 mu m, the particle size range of the hollow glass bead is 10-30 mu m, and in the copper-tin powder, the ratio of copper: tin is 2: 1.
2. and adding 5 omega t.% paraffin forming agent into the powder mixture, uniformly stirring, sieving, granulating, and filling into a graphite mold.
3. Placing the loaded mould into argon atmosphere, keeping the temperature at 300 ℃ for 40min, degassing, degreasing, raising the temperature to 550 ℃ and keeping the temperature for 30min, and reacting, synthesizing and sintering under the pressure of 6MPa in the sintering atmosphere. And cooling to obtain the diamond grinding wheel teeth.
4. And flatly grinding the grinding wheel teeth to a certain size, inlaying and adhering the grinding wheel teeth to an aluminum substrate by using AB type epoxy resin glue, and curing for 24 hours to obtain the diamond grinding wheel disc.
The performance of the superhard diamond grinding wheel prepared by the method is tested, and the test result is shown in table 1.
Example 3: the implementation process comprises the following steps:
1. powder mixtures were prepared according to the ratio of the ingredients in the table below and mixed in a V-blender at a ball to feed ratio of 1:5 and 20rpm for 24h to prepare a homogeneous powder mixture.
| Components | Diamond micropowder | Hollow glass bead | Copper tin powder | Tin powder |
| Mass percent | 5ωt.％ | 10ωt.％ | 77ωt.％ | 8ωt.％ |
The diamond micro powder is a three-type material, the particle size range is 35-40 mu m, the particle size range of the hollow glass bead is 10-30 mu m, and in the copper-tin powder, the ratio of copper: tin is 2: 1.
2. and adding 5 omega t.% paraffin forming agent into the powder mixture, uniformly stirring, sieving, granulating, and filling into a graphite mold.
3. Placing the loaded mould into argon atmosphere, keeping the temperature at 300 ℃ for 40min, degassing, degreasing, raising the temperature to 550 ℃ and keeping the temperature for 30min, and reacting, synthesizing and sintering under the pressure of 6MPa in the sintering atmosphere. And cooling to obtain the diamond grinding wheel rack.
4. And flatly grinding the grinding wheel teeth to a certain size, inlaying and adhering the grinding wheel teeth to an aluminum substrate by using AB type epoxy resin glue, and curing for 24 hours to obtain the diamond grinding wheel disc.
The performance of the superhard diamond grinding wheel prepared by the method is tested, and the test result is shown in table 1.
Example 4:
the implementation process comprises the following steps:
1. preparing powder mixture according to the proportion of the table components, mixing for 24 hours in a V-shaped blender at the speed of 20rpm and the ball-material ratio of 1:5 to prepare uniform powder mixture,
| components | Diamond micropowder | Hollow glass bead | Copper tin powder | Tin powder |
| Mass percent | 5ωt.％ | 10ωt.％ | 79ωt.％ | 6ωt.％ |
The diamond micro powder is a three-type material, the particle size range is 35-40 mu m, the particle size range of the hollow glass bead is 10-30 mu m, and in the copper-tin powder, the ratio of copper: tin is 2: 1.
2. and adding 5 omega t.% paraffin forming agent into the powder mixture, uniformly stirring, sieving, granulating, and filling into a graphite mold.
3. Placing the loaded mould into argon atmosphere, keeping the temperature at 300 ℃ for 40min, degassing, degreasing, raising the temperature to 530 ℃ and keeping the temperature for 30min, and reacting, synthesizing and sintering under the pressure of 6MPa in the sintering atmosphere. And cooling to obtain the diamond grinding wheel teeth.
4. And flatly grinding the grinding wheel teeth to a certain size, inlaying and adhering the grinding wheel teeth to an aluminum substrate by using AB type epoxy resin glue, and curing for 24 hours to obtain the diamond grinding wheel disc.
The performance of the superhard diamond grinding wheel prepared by the method is tested, and the test result is shown in table 1.
Example 5:
the implementation process comprises the following steps:
1. powder mixtures were prepared according to the ratio of the ingredients in the table below and mixed in a V-blender at a ball to feed ratio of 1:5 and 20rpm for 24h to prepare a homogeneous powder mixture.
The diamond micro powder is a three-type material, the particle size range is 35-40 mu m, the particle size range of the hollow glass bead is 10-30 mu m, and in the copper-tin powder, the ratio of copper: tin is 2: 1.
2. and adding 5 omega t.% paraffin forming agent into the powder mixture, uniformly stirring, sieving, granulating, and filling into a graphite mold.
3. Placing the loaded mould into argon atmosphere, keeping the temperature at 300 ℃ for 40min, degassing, degreasing, raising the temperature to 570 ℃ and keeping the temperature for 30min, and reacting, synthesizing and sintering under the pressure of 6MPa in the sintering atmosphere. And cooling to obtain the diamond grinding wheel rack.
4. And flatly grinding the grinding wheel teeth to a certain size, inlaying and adhering the grinding wheel teeth to an aluminum substrate by using AB type epoxy resin glue, and curing for 24 hours to obtain the diamond grinding wheel disc.
The performance of the superhard diamond grinding wheel prepared by the method is tested, and the test result is shown in table 1.
Comparative example 1
1. Powder mixtures were prepared according to the ratio of the ingredients in the table below and mixed in a V-blender at a ball to feed ratio of 1:3 and 20rpm for 24h to prepare a homogeneous powder mixture.
| Components | Diamond micropowder | Hollow glass bead | Copper tin powder | Tin powder |
| Mass percent | 5ωt.％ | 10ωt.％ | 81ωt.％ | 4ωt.％ |
2. The mixed powder was charged into a steel mold.
3. The steel mould was pressed into a green body at a pressure of 80MPa and held at 650 ℃ in a muffle furnace for 2 h.
4. And flatly grinding the grinding wheel teeth to a certain size, inlaying and adhering the grinding wheel teeth to an aluminum substrate by using AB type epoxy resin glue, and curing for 24 hours to obtain the diamond grinding wheel disc.
The performance of the superhard diamond grinding wheel prepared by the method is tested, and the test result is shown in table 1.
Comparative example 2
The implementation process comprises the following steps:
1. powder mixtures were prepared according to the ratio of the ingredients in the table below and mixed in a V-blender at a ball to feed ratio of 1:5 and 20rpm for 24h to prepare a homogeneous powder mixture.
| Components | Diamond micropowder | Hollow glass bead | Copper tin powder | Tin powder |
| Mass percent | 5ωt.％ | 10ωt.％ | 81ωt.％ | 4ωt.％ |
The diamond micro powder is a four-type material, the particle size range is 35-40 mu m, the particle size range of the hollow glass bead is 10-30 mu m, and in the copper-tin powder, the ratio of copper: tin is 2: 1.
2. and adding 5 omega t.% paraffin forming agent into the powder mixture, uniformly stirring, sieving, granulating, and filling into a graphite mold.
3. Placing the loaded mould into argon atmosphere, keeping the temperature at 300 ℃ for 40min, degassing, degreasing, raising the temperature to 550 ℃ and keeping the temperature for 30min, and reacting, synthesizing and sintering under the pressure of 6MPa in the sintering atmosphere. And cooling to obtain the diamond grinding wheel teeth.
4. And flatly grinding the grinding wheel teeth to a certain size, inlaying and adhering the grinding wheel teeth to an aluminum substrate by using AB type epoxy resin glue, and curing for 24 hours to obtain the diamond grinding wheel disc.
The performance of the superhard diamond grinding wheel prepared by the method is tested, and the test result is shown in table 1.
Comparative example 3
The implementation process comprises the following steps:
1. powder mixtures were prepared according to the ratio of the ingredients in the table below and mixed in a V-blender at a ball to feed ratio of 1:5 and 20rpm for 24h to prepare a homogeneous powder mixture.
| Components | Diamond micropowder | Hollow glass bead | Copper tin powder | Tin powder |
| Mass percent | 5ωt.％ | 10ωt.％ | 81ωt.％ | 4ωt.％ |
The diamond micro powder is a four-type material, the particle size range is 50-54 mu m, the particle size range of the hollow glass bead is 10-30 mu m, and in the copper-tin powder, the ratio of copper: tin is 2: 1.
2. and adding 5 omega t.% paraffin forming agent into the powder mixture, uniformly stirring, sieving, granulating, and filling into a graphite mold.
3. Placing the loaded mould into argon atmosphere, keeping the temperature at 300 ℃ for 40min, degassing, degreasing, raising the temperature to 550 ℃ and keeping the temperature for 30min, and reacting, synthesizing and sintering under the pressure of 6MPa in the sintering atmosphere. And cooling to obtain the diamond grinding wheel teeth.
4. And flatly grinding the grinding wheel teeth to a certain size, inlaying and adhering the grinding wheel teeth to an aluminum substrate by using AB type epoxy resin glue, and curing for 24 hours to obtain the diamond grinding wheel disc.
The performance of the superhard diamond grinding wheel prepared by the method is tested, and the test result is shown in table 1.
Comparative example 4
The implementation process comprises the following steps:
1. powder mixtures were prepared according to the ratio of the ingredients in the table below and mixed in a V-blender at a ball to feed ratio of 1:5 and 20rpm for 24h to prepare a homogeneous powder mixture.
| Components | Diamond micropowder | Copper tin powder | Tin powder |
| Mass percent | 5ωt.％ | 90ωt.％ | 5ωt.％ |
The diamond micro powder is a four-type material, the particle size range is 35-40 mu m, the particle size range of the hollow glass bead is 10-30 mu m, and in the copper-tin powder, the ratio of copper: tin is 2: 1.
2. and adding 5 omega t.% paraffin forming agent into the powder mixture, uniformly stirring, sieving, granulating, and filling into a graphite mold.
3. Placing the loaded mould into argon atmosphere, keeping the temperature at 300 ℃ for 40min, degassing, degreasing, raising the temperature to 550 ℃ and keeping the temperature for 30min, and reacting, synthesizing and sintering under the pressure of 6MPa in the sintering atmosphere. And cooling to obtain the diamond grinding wheel teeth.
4. And flatly grinding the grinding wheel teeth to a certain size, inlaying and adhering the grinding wheel teeth to an aluminum substrate by using AB type epoxy resin glue, and curing for 24 hours to obtain the diamond grinding wheel disc.
The performance of the superhard diamond grinding wheel prepared by the method is tested, and the test result is shown in table 1.
TABLE 1 Properties of diamond grinding disks prepared in examples and comparative examples
The principle and the beneficial effects of the invention are as follows:
1. the strength of the grinding wheel prepared by the method exceeds 80MPa, the hardness exceeds 50HRC, and the bonding agent has higher holding force on diamond, so the service life of the grinding wheel is long.
2. The grinding wheel prepared by the invention has uniform density and better surface quality of the ground sapphire. The defects of edge crack, scratch and the like which are easy to generate in the processing process are reduced, and the stability of the grinding wheel is improved.
3. The diamond superhard grinding wheel has the advantages that the processing performance of the diamond superhard grinding wheel can be regulated and controlled through the component proportion and the process parameters, the problem that superhard materials are difficult to process is effectively solved, the processing and grinding cost of a cutter is reduced, and the production efficiency is improved.
Claims (10)
1. The utility model provides a diamond grinding wheel dish for sapphire attenuate which characterized in that: the diamond grinding wheel consists of an aluminum substrate and diamond grinding wheel teeth, wherein the diamond grinding wheel teeth are prepared from the following raw materials in percentage by mass: diamond micro powder: 4-10%, copper-tin powder: 75-87%, tin powder: 3-9%, hollow glass beads: 5 to 15 percent; the diamond micro powder is selected from a second type material or a third type material, and the particle size of the diamond micro powder is 35-46 mu m.
2. A diamond grinding wheel disk for sapphire thinning according to claim 1, wherein: the diamond grinding wheel tooth comprises the following raw materials in percentage by mass: diamond micro powder: 4-6%, copper-tin powder: 77-81%, tin powder: 4-8%, hollow glass beads: 8 to 12 percent.
3. A diamond grinding wheel for sapphire thinning according to claim 1 or 2, characterized in that: in the copper-tin powder, the atomic ratio is as follows: cu: sn 1.5-2.5: 1.
4. a diamond grinding wheel for sapphire thinning according to claim 1 or 2, characterized in that: the particle size of the hollow glass beads is 10-30 mu m, and the softening point temperature of the hollow glass beads is above 650 ℃.
5. The method for preparing a diamond grinding wheel disk for sapphire thinning according to any one of claims 1 to 4, wherein: the method comprises the following steps:
the diamond grinding wheel tooth glue is embedded and adhered on an aluminum matrix, and a diamond grinding wheel disc is obtained after solidification.
6. The method for preparing a diamond grinding wheel for sapphire thinning according to claim 5, wherein the method comprises the following steps: the mixing is carried out in a V-shaped mixer, and the ball-material ratio is 1: 3-5, the rotating speed is 20-25rpm, and the time is 24-36 h.
7. The method for preparing a diamond grinding wheel for sapphire thinning according to claim 5, wherein the method comprises the following steps: the forming agent is paraffin, and the addition amount of the paraffin is 5-8w t% of the mass of the mixed powder.
8. The method for preparing a diamond grinding wheel for sapphire thinning according to claim 7, wherein the method comprises the following steps: heating paraffin to 70-80 deg.C to obtain paraffin solution, adding paraffin solution into the mixed powder, stirring, extruding, sieving, and drying to obtain granule.
9. The method for preparing a diamond grinding wheel disk for sapphire thinning according to claim 1, wherein the method comprises the following steps: the particle size of the pellets was 300-500. mu.m.
10. The method for preparing a diamond grinding wheel disk for sapphire thinning according to claim 1, wherein the method comprises the following steps: the sintering is carried out under the protective atmosphere, and the sintering process comprises the following steps: the temperature is raised to 450 ℃ for heat preservation for 20-40min, and then raised to 600 ℃ for heat preservation for 10-30min, and the sintering pressure is 5-10 MPa.
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