CN114364736A - Resin composition for semiconductor encapsulation and semiconductor device - Google Patents
Resin composition for semiconductor encapsulation and semiconductor device Download PDFInfo
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- CN114364736A CN114364736A CN202080060595.3A CN202080060595A CN114364736A CN 114364736 A CN114364736 A CN 114364736A CN 202080060595 A CN202080060595 A CN 202080060595A CN 114364736 A CN114364736 A CN 114364736A
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- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
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- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C08K5/00—Use of organic ingredients
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- C08K5/00—Use of organic ingredients
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- C08L35/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
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Abstract
A resin composition for semiconductor encapsulation, comprising (A) at least one thermosetting resin selected from the group consisting of epoxy resins and bismaleimide resins, (B) a curing agent, (C) an inorganic filler, and (D) a dispersant, the resin composition for semiconductor encapsulationCompound at mold temperature: 175 ℃, injection rate Q: 178mm3In terms of a/second, a composition having a width W: 15mm, thickness D: 1mm, length: the resin composition for sealing a semiconductor is in the form of pellets, and the lowest melt viscosity measured by a slit-type viscosity measuring device having a rectangular flow path of 175mm is not less than 1 mPas and not more than 68000 mPas.
Description
Technical Field
The present invention relates to a resin composition for sealing a semiconductor, and a semiconductor device including a semiconductor element sealed with the resin composition.
Background
In recent years, with the increase in the density of electronic components mounted on a printed wiring board, the mainstream of semiconductor devices has changed from pin type packages that have been used frequently to surface mount type packages. Surface-mounted ICs, LSIs, and the like are thin and small packages for high-density packaging, and the volume occupied by the elements relative to the packages is also increased, and the walls of the packages are extremely thin. Further, the increase in the number of functions and the increase in the capacity of the device have led to an increase in the chip area and the increase in the number of leads, and further, to a reduction in the pad pitch and a reduction in the pad size, that is, a so-called narrow pad pitch.
However, since a substrate on which a semiconductor element is mounted cannot have a narrow pitch of an electrode gap as in the case of the semiconductor element, it is possible to cope with the increase in terminals by lengthening a wire extending from the semiconductor element or by making the wire flexible. However, if the metal wire is made thin, the metal wire is likely to be displaced by the injection pressure of the resin in the subsequent resin sealing step. This tendency is particularly remarkable in the side gate system.
Therefore, a so-called compression molding method is increasingly used as a method for resin-sealing an electronic component such as a semiconductor chip. In the compression molding method, a powder-particle-shaped resin composition is supplied so as to face an object to be sealed (for example, a substrate on which an electronic component such as a semiconductor chip is mounted) held in a mold, and the object to be sealed and the powder-particle-shaped resin composition are compressed to perform resin sealing.
According to the compression molding method, since the molten resin in powder form and particle form flows in a direction substantially parallel to the main surface of the object to be sealed, the amount of flow can be reduced, and deformation or breakage of the object to be sealed due to the flow of the resin can be reduced. This is particularly effective in reducing the occurrence of so-called wire sweep (wire sweep) in which a wire or the like of a wire bonding (wire bonding) is deformed or broken by a resin flow.
As a sealing material used in the compression molding method, for example, a resin composition proposed in patent document 1 is known. Patent document 1 describes that a particulate epoxy resin composition having a specific particle diameter and containing an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a fatty acid having a melting point of 70 ℃ or lower and a silane coupling agent having a boiling point of 200 ℃ or higher can improve the meltability of the resin composition at the time of sealing and can improve the releasability after sealing.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2011-153173
Disclosure of Invention
Technical problem to be solved by the invention
However, as a result of studies by the inventors of the present invention, it has been found that the resin composition described in patent document 1 may not be able to appropriately seal a semiconductor element, for example, because the filling property of the sealing material is insufficient.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a resin composition for semiconductor encapsulation which can improve meltability at the time of semiconductor encapsulation and can appropriately encapsulate a semiconductor element mounted on a substrate by compression molding. It is another object of the present invention to provide a semiconductor device having a semiconductor element sealed with the resin composition for sealing a semiconductor and having excellent reliability.
Means for solving the technical problem
The present inventors have paid attention to the fact that in order to prevent a resin composition as a sealing material from flowing hardly when a semiconductor element is sealed by compression molding and to sufficiently improve the filling property so as to avoid generation of an unfilled portion, it is necessary to sufficiently melt the resin composition at the time of sealing. The present inventors have found that, by specifically blending a semiconductor sealing resin composition containing an inorganic filler or by specifically blending the resin composition and having a melt viscosity of a specific value, the inorganic filler is highly dispersed, and as a result, the fusibility of the sealing resin composition is improved, and wire displacement during sealing can be suppressed, and have completed the present invention.
According to the present invention, there is provided a resin composition for semiconductor encapsulation, comprising:
(A) at least one thermosetting resin selected from the group consisting of epoxy resins and bismaleimide resins;
(B) a curing agent;
(C) an inorganic filler; and
(D) a dispersant which is a mixture of a dispersant and a surfactant,
the lowest melt viscosity eta of the resin composition for sealing semiconductor is measured under the following conditions of < melt viscosity measurement >minIs 1 to 68000 mPas inclusive,
the resin composition for sealing a semiconductor is in the form of pellets.
< condition for measuring melt viscosity >
At the temperature of the mold: 175 ℃, injection rate Q: 178mm3In terms of a/second, a composition having a width W: 15mm, thickness D: 1mm, length: the measurement was performed by a slit-type viscosity measuring apparatus having a rectangular flow passage of 175mm, and the lowest melt viscosity 5 seconds after the start of the melt viscosity measurement was defined as ηmin。
In addition, according to the present invention, there is provided a semiconductor device including:
a semiconductor element mounted on the substrate; and
a sealing member for sealing the semiconductor element,
the sealing member is composed of a cured product of the resin composition for sealing a semiconductor.
According to the present invention, there is provided a resin composition for semiconductor encapsulation, comprising:
(A) an epoxy resin;
(B) a curing agent;
(C) an inorganic filler; and
(D) a dispersant which is a mixture of a dispersant and a surfactant,
the epoxy resin (A) comprises at least one member selected from the group consisting of biphenyl type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins, phenol novolak type epoxy resins, polyfunctional epoxy resins, phenol aralkyl type epoxy resins, naphthol type epoxy resins, triazine nucleus-containing epoxy resins and bridged hydrocarbon compound-modified phenol type epoxy resins,
the dispersant (D) is a polymeric ionic dispersant having a polycarboxylic acid as a main skeleton,
the amount of the dispersant (D) is 0.01 to 5.0 mass% based on the whole resin composition.
The resin composition for sealing a semiconductor of the present embodiment may be in any of a tablet, a sheet, and a pellet shape.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, there is provided a resin composition for sealing a semiconductor, which can appropriately seal a semiconductor element mounted on a substrate by compression molding.
Drawings
Fig. 1 is a diagram showing a cross-sectional structure of a semiconductor device obtained by sealing a semiconductor element mounted on a lead frame with the resin composition of the present embodiment.
Fig. 2 is a diagram showing a cross-sectional structure of a semiconductor device obtained by sealing a semiconductor element mounted on a circuit board using the resin composition of the present embodiment.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and the description thereof is omitted as appropriate.
(embodiment 1)
The resin composition for semiconductor encapsulation in embodiment 1 is in the form of pellets (hereinafter referred to as "pellet resin composition" or simply as "resin composition"). The particulate resin composition of the present embodiment contains (a) at least one thermosetting resin selected from epoxy resins and bismaleimide resins, (B) a curing agent, (C) an inorganic filler, and (D) a dispersant. The particulate resin composition of the present embodiment has a minimum melt viscosity of 1mPa · s to 68000mPa · s.
The particulate resin composition of the present embodiment contains a dispersant, so that the dispersibility of the inorganic filler is improved and the particulate resin composition has a low melt viscosity. As a result, when a semiconductor element mounted on a substrate is sealed by a compression molding method using the resin composition, wire displacement or wire deformation can be reduced. Further, since the granular resin composition has good fluidity in a molten state, unfilled portions are not formed in the semiconductor element, and the semiconductor element can be sealed satisfactorily.
The particulate resin composition of the present embodiment will be described below.
The particulate resin composition of the present embodiment preferably contains 85% by mass or more of the components in a particle size range of 100 μm to 3mm in the particle size distribution. If the amount of particles outside the above particle size range is too large, the semiconductor element tends to be unable to be sealed properly by compression molding. Specifically, for example, if the resin composition having an excessively small particle diameter is too large, the resin composition having an excessively small particle diameter preferentially melts, and the resin composition used as the sealing material does not uniformly melt during compression molding, and thus the semiconductor element tends to be unable to be appropriately sealed. On the other hand, if the resin composition having an excessively large particle diameter is too large, the resin composition having an excessively large particle diameter is difficult to melt, and a granular resin composition remaining without being melted exists in the resin composition melted at the time of compression molding, and thus the semiconductor element may not be sealed properly. The particle size distribution of the particulate resin composition can be measured by a general particle size meter. Alternatively, the granular resin composition may be sieved by repeating sieves of various sizes in ascending order of size, and the calculation may be performed based on the mass of the granules remaining on each sieve.
The respective components used in the particulate resin composition used as a sealing material will be described below by taking specific examples. The melt viscosity of the particulate resin composition can be set to a target value by adjusting the kind or the blending amount of the components used.
(thermosetting resin (A))
The thermosetting resin (a) used in the particulate resin composition of the present embodiment contains at least one selected from the group consisting of an epoxy resin and a bismaleimide resin.
The epoxy resin may be any of monomers, oligomers, and polymers having 2 or more epoxy groups in 1 molecule, and the molecular weight and the molecular structure thereof are not limited. Examples of the epoxy resin include biphenyl type epoxy resins; bisphenol epoxy resins such as bisphenol a epoxy resin, bisphenol F epoxy resin, and tetramethylbisphenol F epoxy resin; stilbene type epoxy resins; novolac type epoxy resins such as phenol novolac type epoxy resins and cresol novolac type epoxy resins; polyfunctional epoxy resins such as trisphenol type epoxy resins exemplified by trisphenol methane type epoxy resins and alkyl-modified trisphenol methane type epoxy resins; phenol aralkyl type epoxy resins such as phenol aralkyl type epoxy resins having a phenylene skeleton, naphthol aralkyl type epoxy resins having a phenylene skeleton, phenol aralkyl type epoxy resins having a biphenylene skeleton, and naphthol aralkyl type epoxy resins having a biphenylene skeleton; naphthol type epoxy resins such as dihydroxynaphthalene type epoxy resins and epoxy resins obtained by glycidyletherifying a dimer of dihydroxynaphthalene; triazine nucleus-containing epoxy resins such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate; and bridged cyclic hydrocarbon compound-modified phenol epoxy resins such as dicyclopentadiene-modified phenol epoxy resins. These may be used alone or in combination of two or more.
Among these, a novolac-type epoxy resin, a polyfunctional epoxy resin, and a phenol aralkyl-type epoxy resin are preferably used from the viewpoint of suppressing warpage of a molded article obtained by curing the particulate resin composition and improving balance among various properties such as filling property, heat resistance, and moisture resistance. From the same viewpoint, the epoxy resin preferably contains at least one selected from the group consisting of an o-cresol novolac-type epoxy resin, a phenol aralkyl-type epoxy resin having a biphenylene skeleton, and a triphenylmethane-type epoxy resin, and more preferably contains at least one selected from the group consisting of an o-cresol novolac-type epoxy resin and a phenol aralkyl-type epoxy resin having a biphenylene skeleton.
The bismaleimide resin used as the thermosetting resin (a) is a (co) polymer of a compound having 2 or more maleimide groups.
The compound having 2 or more maleimide groups includes, for example, at least one of a compound represented by the following general formula (1) and a compound represented by the following general formula (2). This can increase the glass transition temperature of the cured product of the particulate resin composition, and can more effectively improve the heat resistance of the cured product.
In the above general formula (1), R1The organic group having a valence of 2 of 1 to 30 carbon atoms may contain one or more of an oxygen atom and a nitrogen atom. From the viewpoint of improving the heat resistance of the cured product, R is more preferable1Is an organic group containing an aromatic ring. In the present embodiment, R is1For example, the following general formula (1a) or (1b) can be exemplified.
In the above general formula (1a), R31Is an organic group having a valence of 2 and having 1 to 18 carbon atoms, which may contain one or more of an oxygen atom and a nitrogen atom. And a plurality of R32Each independently represents a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 to 4 carbon atoms.
In the general formula (1b), a plurality of R independently exist, and R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a phenyl group, preferably a hydrogen atom. Further, m is an average value and is a number of 1 to 5, preferably a number of more than 1 and 5 or less, more preferably a number of more than 1 and 3 or less, and further preferably a number of more than 1 and 2 or less.
Examples of the compound represented by the general formula (1) that is suitable for use in the present embodiment include compounds represented by the following formulae (1-1) to (1-3).
In the above general formula (2), a plurality of R2Each independently represents a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 to 4 carbon atoms. n is an average value and is a number of 0 to 10, preferably 0 to 5.
The thermosetting resin (a) may further contain a thermosetting resin other than the epoxy resin and the bismaleimide resin. Examples of such a thermosetting resin include one or more selected from benzoxazine resins, phenol resins, urea (urea) resins, melamine resins, and the like, unsaturated polyester resins, polyurethane resins, diallyl phthalate resins, silicone resins, cyanate ester resins, polyimide resins, polyamideimide resins, and benzocyclobutene resins.
The content of the thermosetting resin (a) is preferably 2% by mass or more, and more preferably 4% by mass or more, relative to the entire resin composition. If the lower limit of the blending ratio is within the above range, the fluidity is less likely to be lowered in the sealing step. The upper limit of the blending ratio of the entire resin composition is not particularly limited, and is preferably 22% by mass or less, and more preferably 20% by mass or less, based on the total amount of the resin composition. When the upper limit of the blending ratio is within the above range, the decrease in glass transition temperature of the resin composition is small, and mutual adhesion can be suitably suppressed. In order to improve the fluidity and the meltability, it is desirable to appropriately adjust the blending ratio according to the type of the epoxy resin used.
Here, in the present embodiment, the content of the arbitrary component with respect to the entire resin composition means: when the resin composition contains a solvent, the content is relative to the content of all solid components in the resin composition except the solvent. The solid content of the resin composition means a nonvolatile content in the resin composition, and means the remaining amount after removing a volatile content such as water or a solvent.
(curing agent (B))
The curing agent (B) used in the resin composition of the present embodiment is roughly classified into an addition polymerization type curing agent, a catalyst type curing agent, and a condensation type curing agent, for example. These may be used alone or in combination of two or more.
The addition polymerization type curing agent contains, for example, 1 or 2 or more selected from the following: polyamine compounds including aliphatic polyamines such as Diethylenetriamine (DETA), triethylenetetramine (TETA), and m-xylylenediamine (MXDA), aromatic polyamines such as diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), and diaminodiphenylsulfone (DDS), Dicyandiamide (DICY), and organic acid dihydrazide; acid anhydrides including alicyclic acid anhydrides such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA), aromatic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA) and Benzophenone Tetracarboxylic Dianhydride (BTDA), and the like; phenolic resin curing agents such as novolak-type phenolic resins, polyvinyl phenols, and aralkyl-type phenolic resins; polythiol compounds such as polysulfides, thioesters and thioethers; isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; and organic acids such as carboxylic acid-containing polyester resins.
The catalyst-type curing agent contains, for example, 1 or 2 or more selected from the following: tertiary amine compounds such as Benzyldimethylamine (BDMA) and 2,4, 6-tris-dimethylaminomethylphenol (DMP-30); imidazole compounds such as 2-methylimidazole and 2-ethyl-4-methylimidazole (EMI 24); BF (BF) generator3Complexes, etc.
The condensed curing agent includes, for example, 1 or 2 or more kinds selected from a urea resin such as a resol-type phenol resin and a methylol-containing urea resin, and a melamine resin such as a methylol-containing melamine resin.
Among these, it is more preferable to contain a phenolic resin curing agent from the viewpoint of improving the balance of flame resistance, moisture resistance, electrical characteristics, curability, storage stability and the like of the obtained resin composition. As the phenolic resin curing agent, for example, monomers, oligomers, and polymers having 2 or more phenolic hydroxyl groups in 1 molecule can all be used, and the molecular weight and the molecular structure thereof are not limited.
The phenolic resin curing agent contains, for example, 1 or 2 or more of the following substances: novolak-type phenol resins such as phenol novolak resin, cresol novolak resin, and bisphenol novolak resin; polyfunctional phenol resins such as polyvinyl phenol and triphenol methane type phenol resins; modified phenolic resins such as terpene-modified phenolic resin and dicyclopentadiene-modified phenolic resin; phenol aralkyl type phenol resins such as phenol aralkyl resins having a phenylene skeleton and/or a biphenylene skeleton and naphthol aralkyl resins having a phenylene skeleton and/or a biphenylene skeleton; bisphenol compounds such as bisphenol A and bisphenol F. Among these, from the viewpoint of suppressing warpage of the molded article, it is more preferable to contain a novolak-type phenol resin, a polyfunctional phenol resin, and a phenol aralkyl-type phenol resin. Further, phenol novolac resins, phenol aralkyl resins having a biphenylene skeleton, and triphenylmethane type phenol resins modified with formaldehyde are also preferably used.
The lower limit of the blending ratio of the curing agent (B) is preferably 2% by mass or more, and more preferably 3% by mass or more, relative to the entire resin composition. When the lower limit of the blending ratio is within the above range, sufficient fluidity can be obtained. The upper limit of the mixing ratio of the curing agent is preferably 16% by mass or less, and more preferably 15% by mass or less, with respect to the entire resin composition. When the upper limit of the blending ratio is within the above range, mutual adhesion can be suitably suppressed. In order to improve the fluidity and the meltability, it is desirable to appropriately adjust the blending ratio according to the kind of the curing agent used.
(inorganic Filler (C))
Examples of the inorganic filler (C) used in the resin composition of the present embodiment include: fused silica such as fused crushed silica and fused spherical silica; silica such as crystalline silica and amorphous silica; silicon dioxide; alumina; aluminum hydroxide; silicon nitride; and aluminum nitride, and the like. These may be used alone or in combination of two or more. The particle shape is preferably as spherical as possible, and the amount of filler can be increased by mixing particles having different particle sizes. In addition, in order to improve the fusibility of the resin composition, silica or alumina is preferably used, and fused spherical silica is preferably used as silica.
The content of the inorganic filler (C) is preferably 80.0 mass% or more and 97.0 mass% or less with respect to the entire resin composition. If the content of the inorganic filler is too small, the heat resistance and the like of a cured product of the resin composition tend to be lowered, and the reliability of the obtained semiconductor device tends to be lowered. In addition, when the content of the inorganic filler is large, the heat resistance and the like of a cured product of the resin composition can be improved, and the reliability of the obtained semiconductor device can be improved. However, as the content of the inorganic filler increases, the resin composition generally has a reduced meltability, in other words, is difficult to melt, and tends to easily cause wire displacement. In the present embodiment, by containing a dispersant described later, the meltability of the resin composition can be improved while maintaining the properties such as heat resistance of the cured product of the resin composition, and the occurrence of wire sweep can be suppressed.
(dispersant (D))
As the dispersant (D) used in the resin composition of the present embodiment, a polymeric ionic dispersant having a polycarboxylic acid as a main skeleton can be used. The polymeric ionic dispersant preferably has a carboxyl group which functions as an adsorptive group to be adsorbed on the inorganic filler and a site which is compatible with the thermosetting resin.
Examples of such a polymeric ionic dispersant include ARON A-6330 (trade name, manufactured by Toyo chemical Co., Ltd.), Hypermer KD-4, Hypermer KD8, Hypermer KD-9, and Hypermer KD-57 (trade name, manufactured by Croda Japan KK.). Among them, preferred are polymeric ionic dispersants represented by the following formula (3), and specific examples thereof include Hypermer KD-4, Hypermer KD-8, Hypermer KD-9 and the like (as described above, manufactured by Croda Japan KK., trade name).
(in the formula (3), p and m represent the number of repeating units, p is an integer of 1 to 20, m is an integer of 1 to 5, R3An alkyl group having 1 to 10 carbon atoms which may have a substituent).
The polymeric ionic dispersant represented by formula (3) has a carboxyl group adsorbed to the inorganic filler and a bulky aliphatic group having compatibility with the thermosetting resin. When such a polymeric ionic dispersant is adsorbed to the inorganic filler, the inorganic filler is highly dispersed in the thermosetting resin (a). Further, the aggregation of the inorganic fillers can be suppressed by steric hindrance between the bulky aliphatic groups of the polymeric ionic dispersant. As a result, the inorganic filler is highly dispersed in the thermosetting resin (a) without aggregation.
The amount of the dispersant (D) used is preferably 0.01 to 5.0% by mass, more preferably 0.1 to 2.0% by mass, and still more preferably 0.2 to 1.5% by mass, based on the entire resin composition. By blending the dispersant (D) in an amount within the above range, the inorganic filler can be highly dispersed in the resin composition.
(curing Accelerator (E))
The resin composition of the present embodiment may contain a curing accelerator (E). The curing accelerator (E) is not particularly limited as long as it can accelerate the curing reaction between the thermosetting resin (a) and the curing agent (B), and examples thereof include imidazoles such as 2-methylimidazole and 2-phenylimidazole, organophosphines such as triphenylphosphine, tributylphosphine, and trimethylphosphine, tertiary amines such as 1, 8-diaza-bicyclo (5,4,0) undecene-7 (DBU), triethanolamine, and benzyldimethylamine. These may be used alone or in combination of two or more.
The content of the curing accelerator (E) is preferably 0.1 mass% or more and 2 mass% or less with respect to the total amount of the thermosetting resin (a) and the curing agent (B). If the content of the curing accelerator is less than the lower limit, the curing accelerator effect tends not to be improved. If the amount is larger than the above upper limit, the flowability or moldability tends to be poor, and the production cost may increase.
(coupling agent)
The resin composition of the present embodiment may contain a silane coupling agent. Examples of the silane coupling agent include vinyl silanes such as vinyltris (β -methoxyethoxy) silane, vinylethoxysilane and vinyltrimethoxysilane, (meth) acrylic silanes such as γ -methacryloxypropyltrimethoxysilane, epoxy silanes such as β - (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, β - (3, 4-epoxycyclohexyl) methyltrimethoxysilane, β - (3, 4-epoxycyclohexyl) ethyltriethoxysilane, β - (3, 4-epoxycyclohexyl) methyltriethoxysilane, γ -glycidoxypropyltrimethoxysilane and γ -glycidoxypropyltriethoxysilane, N- β (aminoethyl) γ -aminopropyltrimethoxysilane, N- β -aminoethyltrimethoxysilane, N- β -ethylenebutyltrimethoxysilane, N-butyltrimethoxysilane, or a, Aminosilanes such as N-beta (aminoethyl) gamma-aminopropyltriethoxysilane, N-beta (aminoethyl) gamma-aminopropylmethyldiethoxysilane, gamma-aminopropyltriethoxysilane, gamma-aminopropyltrimethoxysilane, N-phenyl-gamma-aminopropyltrimethoxysilane and N-phenyl-gamma-aminopropyltriethoxysilane, and thiosilanes (thiosilanes) such as gamma-mercaptopropyltrimethoxysilane and gamma-mercaptopropyltriethoxysilane.
The amount of the coupling agent used is preferably 0.01 to 1.0% by mass, more preferably 0.05 to 0.9% by mass, and still more preferably 0.08 to 0.8% by mass, based on the entire resin composition. By blending the coupling agent in an amount within the above range, the improvement of the melt property of the obtained resin composition and the migration resistance of the resin composition can be achieved at the same time.
(other additives)
In addition to the above components, the resin composition of the present embodiment may contain, as necessary, conventionally known additives such as a flame retardant, a coloring agent, a silicone flexibilizer, an ion scavenger, and the like, within a range that does not impair the desired properties as the object of the present invention.
The properties of the particulate resin composition in the present embodiment will be described.
In the present embodiment, the minimum melt viscosity η measured by the slit-type viscosity measuring deviceminThe upper limit of (b) is 68000 mPas or less, preferably 60000 mPas or less, more preferably 50000 mPas or less, and further preferably 40000 mPas or less. Therefore, the filling property of the sealing material is good. Minimum melt viscosity eta measured by slit-type viscosity measuring deviceminThe lower limit of (b) is not particularly limited, but is, for example, 1 mPas or more, preferably 50 mPas or more.
In the present embodiment, the lowest melt viscosity η measured by the slit-type viscosity measuring device is achievedminThe upper limit of time t1 is 15 seconds or less, preferably 12 seconds or less, and more preferably 10 seconds or less. Therefore, the filling property of the sealing material is good. The lowest melt viscosity eta measured by a slit type viscosity measuring device is achievedminThe lower limit of time t1 is not particularly limited, and is, for example, 5 seconds or more.
And will reach ηminThen the melt viscosity rises to (eta)min+1000) (mPas) or more, and the lower limit of t 2-t 1 is 1 second or more, when t2 is defined as the time point. the upper limit of t 2-t 1 is 30 seconds or less, preferably 25 seconds or less, and more preferably 20 seconds or less. When t 2-t 1 is not less than the lower limit, the Pot life (Pot-life) of the resin composition can be sufficiently obtained, and the filling property of the sealing material can be improved. When t 2-t 1 is equal to or less than the upper limit value, curing unevenness can be suppressed, the molding cycle can be extended, and a reduction in production efficiency can be prevented.
In the present embodiment, when the resin composition is charged into the aluminum cup and heated at 175 ℃ for 3 minutes, the cured resin composition after heating is taken out of the aluminum cup, and in the portion where the heated resin composition is melt-spread on the bottom surface of the aluminum cup, the melting property (filling ratio (%)) represented by (a1/(a1+ a2)) × 100) is preferably 30% to 100% where the area of the contact portion where the molten resin composition contacts the bottom surface of the aluminum cup is a1 and the area of the void portion where the molten resin composition does not contact the bottom surface of the aluminum cup is a 2. Therefore, the filling property of the sealing material is good, and stable curing properties can be obtained.
(production of granular resin composition)
The method for producing the particulate resin composition of the present embodiment is not particularly limited as long as it can produce a particulate resin composition containing the above components and having a particle size distribution in the above range. Specifically, for example, the following manufacturing method is possible. First, the above components and, if necessary, additives are uniformly mixed at a predetermined content by a mixer such as a tumbler mixer or a henschel mixer, a blender or the like, and then kneaded while heating by a kneader, a roll, a disperser, a vacuum emulsifier, a planetary mixer or the like. Among them, the temperature at the time of kneading needs to be within a temperature range in which the curing reaction does not occur, and depends on the composition of the epoxy resin and the curing agent, but it is preferable to melt-knead at about 70 to 150 ℃. After kneading, the mixture is cooled and solidified, and the solidified kneaded product is pulverized by a pulverizer or the like. Thus, a granular resin composition can be produced. Then, the resin composition may be sieved so that the particle size distribution may be within the above range.
(use)
The granular resin composition of the present embodiment is used as a sealing material for sealing a semiconductor element mounted on a lead frame or a circuit board by a compression molding method.
Hereinafter, a semiconductor device including: a lead frame or a circuit board, 1 or more semiconductor elements stacked or mounted in parallel on the lead frame or the circuit board, a bonding wire for electrically connecting the lead frame or the circuit board and the semiconductor element, and a sealing material for sealing the semiconductor element and the bonding wire.
Fig. 1 is a diagram showing a cross-sectional structure of an example of a semiconductor device obtained by sealing a semiconductor element mounted on a lead frame with the resin composition according to the present embodiment. The semiconductor element 401 is fixed on the die pad 403 via the die-bonding material cured body 402. The electrode pad of the semiconductor element 401 and the lead frame 405 are connected by a metal wire 404. The semiconductor element 401 is sealed with a sealing material 406 made of a cured body of the resin composition of the present embodiment.
Fig. 2 is a diagram showing a cross-sectional structure of an example of a semiconductor device obtained by sealing a semiconductor element mounted on a circuit board with the resin composition of the present embodiment. The semiconductor element 401 is fixed to the circuit board 408 via the die-bonding material cured body 402. The electrode pads 407 of the semiconductor element 401 and the electrode pads 407 on the circuit board 408 are connected by metal wires 404. The surface of the circuit board 408 on which the semiconductor element 401 is mounted is sealed with a sealing material 406 composed of a cured product of the resin composition of the present embodiment. The electrode pads 407 on the circuit board 408 are bonded to the inside of the bonding holes 409 on the non-sealing surface side of the circuit board 408.
The semiconductor device having the resin composition of the present embodiment as a sealing material has excellent reliability because metal wires are not displaced or damaged in the sealing step.
(embodiment 2)
The resin composition for semiconductor encapsulation in embodiment 2 is in the form of a tablet or a sheet (sheet) (hereinafter referred to as "tablet or sheet-like resin composition"). The resin composition in a pellet or sheet form of the present embodiment contains (a) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a dispersant. In the resin composition of the present embodiment, the epoxy resin (a) includes at least one selected from the group consisting of a biphenyl-type epoxy resin, a bisphenol-type epoxy resin, a stilbene-type epoxy resin, a phenol novolac-type epoxy resin, a polyfunctional epoxy resin, a phenol aralkyl-type epoxy resin, a naphthol-type epoxy resin, a triazine nucleus-containing epoxy resin, and a bridged hydrocarbon compound-modified phenol-type epoxy resin. In the present embodiment, the dispersant (D) is a polymeric ionic dispersant having a polycarboxylic acid as a main skeleton, and the amount of the dispersant (D) is 0.01 mass% or more and 5.0 mass% or less with respect to the entire resin composition.
In the resin composition for sealing a semiconductor according to embodiment 2, the same components as those described in embodiment 1 may be used for the components (a) to (D). The amounts of these components may be the same as those in the resin composition of embodiment 1.
The semiconductor resin composition of the present embodiment may further contain a bismaleimide resin. The same resin as that used in embodiment 1 can be used for the bismaleimide resin.
When the resin composition of the present embodiment is in the form of a tablet, it can be produced by: the above components and, if necessary, additives are uniformly mixed at a predetermined content by a mixer such as a tumbler mixer or a henschel mixer, a blender or the like, and then kneaded while being heated by a kneader, a roll, a disperser, a vacuum emulsifier, a planetary mixer or the like, and then the kneaded product is formed into a tablet shape by tableting. The temperature at the kneading is required to be within a temperature range in which the curing reaction does not occur, and depends on the composition of the epoxy resin and the curing agent, but it is preferable to melt-knead the mixture at about 70 to 150 ℃. The resin composition in the form of a tablet can be used for sealing a semiconductor by a known molding method such as a transfer molding method, an injection molding method, or a compression molding method.
When the resin composition of the present embodiment is in the form of a sheet, it can be obtained by: the resin composition that has been heated and kneaded as described above is heated and melted between the pressing members and compressed to be molded into a sheet shape. More specifically, the resin composition is supplied to a heat-resistant release film such as a polyester film to form a resin layer having a substantially uniform thickness, and then the resin layer is heated and softened while being rolled by a roll or a hot press. In this case, a heat-resistant film such as a polyester film is also disposed on the resin layer. After the resin layer is rolled to a desired thickness in this manner, the heat-resistant film is peeled off by cooling and solidified, and further cut into a desired size and shape as needed. Therefore, a resin sheet for semiconductor encapsulation can be obtained. Wherein the heating temperature for softening the resin layer is usually about 70 to 150 ℃. The sheet-like resin composition can be used for sealing semiconductors by compression molding.
The sheet-like resin composition preferably has a thickness of 0.1mm or more and 2mm or less. Within the above range, the molding material is excellent in workability, free from damage, and easy to convey to a compression molding die.
The lowest melt viscosity η of the resin composition in a form of a pellet or a sheet of the embodimentminIs 1 to 68000 mPas, preferably 60000 mPas, more preferably 50000 mPas, and most preferably 40000 mPas. If the amount is outside the above range, the filling property is lowered, and voids (void) or unfilled portions may be generated. The lower limit is not particularly limited, and may be, for example, 1mPa · s or more or 50mPa · s or more.
While the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above-described configurations may be adopted.
[ examples ]
The present invention will be described below with reference to examples and comparative examples, but the present invention is not limited to these examples.
The components used in the examples and comparative examples are shown below.
(thermosetting resin)
Epoxy resin 1: biphenyl type epoxy resin (manufactured by Mitsubishi chemical corporation, YX4000K)
Epoxy resin 2: biphenylalkyl epoxy resin (NC 3000L, made by Nippon Kabushiki Kaisha)
(curing agent)
Curing agent 1: alpha-Naphthol aralkyl resin (SN-485, manufactured by Tokyo Kabushiki Kaisha)
(inorganic Filler)
Inorganic filler 1: alumina (made by Meiguang, AX3-10R)
Inorganic filler 2: silica (MUF-4, available from Longsen K.K.)
(dispersing agent)
Dispersant 1: polymer ionic dispersant having polycarboxylic acid as main skeleton (manufactured by Croda Japan KK., HYPERMER KD-9, CAS No.58128-22-6, weight average molecular weight 760, acid value 74mgKOH, melting point 20 ℃ C.)
Dispersant 2: polymer ionic dispersant having polycarboxylic acid as main skeleton (manufactured by Croda Japan KK., HYPERMER KD-4, weight average molecular weight 1700, acid value 33mgKOH)
Dispersant 3: polymeric ionic dispersants having polycarboxylic acid as main skeleton (manufactured by Croda Japan KK., HYPERMER KD-57)
(coupling agent)
Coupling agent 1: n-phenylaminopropyl trimethoxysilane (CF-4083, manufactured by Donglidao Corning Co., Ltd.)
(curing accelerators)
Curing accelerator 1: tetraphenylphosphonium bis (naphthalene-2, 3-dioxo) phenyl silicate (manufactured by Sumitomo bakelite Co., Ltd.)
Curing accelerator 2: tetraphenylphosphonium-4, 4' -sulfonyldiphenol salt (manufactured by Sumitomo Bakeley Co., Ltd.)
(mold releasing agent)
Mold release agent 1: glycerol tri-montanic acid ester (manufactured by Clariant Japan K.K., Licolub WE-4)
Mold release agent 2: diethanolamine ditrimentalate (manufactured by Clariant Japan K.K., Licomont NC-133)
(coloring agent)
Colorant 1: carbon black (Tokai Carbon Co., Ltd., ERS-2001, manufactured by Ltd.)
(oil)
Oil 1: carbonyl-terminated nitrile rubber (Chor GLEX Co., Ltd., CTBN1008SP, manufactured by Ltd.)
(silica)
Silica 1: silica (Admatechs Co., Ltd., SC-2500-SQ) (examples 1 to 4, comparative example 1)
The raw materials of the resin compositions shown in Table 1 were pulverized and mixed for 5 minutes by a super mixer, and then the mixed raw materials were melt-kneaded at a screw rotation speed of 400rpm and a resin temperature of 100 ℃ by a co-rotating twin-screw extruder having a cylinder inner diameter of 65 mm. Subsequently, the melt-kneaded resin composition was supplied at a rate of 2kg/hr from above a rotor having a diameter of 20cm, and passed through a plurality of small holes (hole diameter: 1.2mm) in the cylindrical outer peripheral portion heated to 115 ℃ by a centrifugal force obtained by rotating the rotor at 3000 rpm. Then, the resultant was cooled to obtain a granular epoxy resin composition for sealing. The obtained granular sealing resin composition was stirred at 15 ℃ for 3 hours under an air stream with a relative humidity adjusted to 55% RH. The obtained resin composition for sealing was evaluated for the following items according to the methods shown below.
(minimum melt viscosity (175 ℃ C.))
The melt viscosity was measured using a slit-type viscosity measuring device. Specifically, using a low-pressure transfer molding machine (NEC co., ltd. 40t manual press), at a mold temperature: 175 ℃, injection rate Q: 178mm3The obtained resin composition for sealing was injected under the condition of width W: 15mm, thickness D: 1mm, length: in a rectangular 175mm flow path, P1 (kgf/cm) was measured by a pressure sensor 1 embedded at a position 25mm from the upstream tip on the flow path of the transfer molding machine2) The pressure P2 (kgf/cm) was measured by using the pressure sensor 2 buried in the flow path at a position 75mm from the upstream tip2) And the pressure loss Δ P (kgf/cm) indicated by (P1-P2) was measured2) Change over time. The distance L between the pressure sensor 1 and the pressure sensor 2 is 50 mm. Then, the pressure loss Δ P during the flow of the sealing resin composition was calculated from the measurement results, and the point at which the pressure loss Δ P was the lowest was set as the lowest pressure loss Δ Pmin(kgf/cm2). Since the measurement result of the pressure immediately after the start of the measurement is unstable, the lowest pressure loss Δ Pmin(kgf/cm2) Set as the lowest pressure loss Δ P after 5 seconds from the start of measurementmin(kgf/cm2)。
The pressure loss Δ P (kgf/cm)2) The melt viscosity η (mPa · s) can be converted by the following formula.
η(mPa·s)＝(ΔP/10.1972×106·WD3)×103/12QL
Will be determined by the lowest pressure loss Δ Pmin(kgf/cm2) The reduced melt viscosity is taken as the minimum melt viscosity etamin(mPa·s)。
Bringing the melt viscosity to ηminThe time point of (mPas) is t 1. And, to etaminThe melt viscosity increases after (mPas) to (η [ (] eta. ])minThe time at which the point is equal to or higher than +1000) (mPa · s) is t 2.
In Table 1, Δ Pmin(kgf/cm2)、ηmin(mPa·s)、t1、(ηmin+1000) (mPas) and t 2.
(meltability (filling ratio))
The obtained resin composition was evaluated for melt-ability using the "filling ratio" described below as an index. First, the powder-like sealing resin compositions (7g) obtained in examples and comparative examples were charged into an aluminum cup (diameter: 50mm, outer peripheral height: 10mm, thickness: 70 μm), and heated in an oven set at 175 ℃ for 3 minutes. The cured resin composition was taken out of the aluminum cup, and the surface of the resin composition in contact with the bottom surface of the aluminum cup was photographed with a digital camera and imaged. The obtained image was binarized, and the area (a1) of the contact portion where the molten resin composition was in contact with the bottom surface of the aluminum cup and the area (a2) of the void portion where the molten resin composition was not in contact with the bottom surface of the aluminum cup were measured in the portion where the heated resin composition was melt-spread on the bottom surface of the aluminum cup, and the filling ratio (%) was calculated as shown in formula (1). The larger the filling ratio (%) is, the better the meltability of the resin composition is.
[ filling ratio (%) ]
Filling rate [% ] (A1/(A1+ A2)). times 100 … … (1)
The results of each are shown in table 1 below.
(fluidity (swirl length))
The flow length was measured by injecting the resin composition using a low-pressure transfer molding machine (manufactured by KOHTAKI Corporation, KTS-15) in a mold for measuring the swirl length according to EMMI-1-66 under conditions of a mold temperature of 175 ℃, an injection pressure of 6.9MPa, and a dwell time of 120 seconds. The length of the rotational flow is an index of the fluidity, and the fluidity is good when the numerical value is large. The unit is cm.
(modulus of elasticity at room temperature (25 ℃ C.))
The granular sealing resin composition obtained in the above manner was used to prepare a test piece having a length of 80mm or more, a height of 4mm and a width of 10 mm. After post-curing the test piece, a bending stress was gradually applied under conditions of a crosshead speed of 2mm/min and an inter-fulcrum distance of 64mm, a load-strain curve was obtained, and the flexural modulus of the test piece was calculated. The average value of N-2 measurements was used as a representative value.
(modulus of elasticity at 260 ℃ C.)
The granular sealing resin composition obtained in the above manner was used to prepare a test piece having a length of 80mm or more, a height of 4mm and a width of 10 mm. After post-curing the test piece, a bending stress was gradually applied in a 260-degree thermostatic bath at a crosshead speed of 2mm/min and an inter-fulcrum distance of 64mm, and a load-strain curve was obtained to calculate the flexural modulus of the test piece. The average value of N-2 measurements was used as a representative value.
The measurement of the melting property (filling ratio) of the comparative example (in the color "1") indicates that the resin composition remains in the form of pellets without being melted.
The sealing resin composition of the embodiment has excellent meltability and fluidity, and is suitable for use as a sealing material for sealing a semiconductor element mounted on a substrate by compression molding.
The present application claims priority based on japanese patent application No. 2019-158029, filed on 30/8/2019, the disclosure of which is incorporated herein in its entirety.
Claims (23)
1. A resin composition for sealing a semiconductor, comprising:
(A) at least one thermosetting resin selected from the group consisting of epoxy resins and bismaleimide resins;
(B) a curing agent;
(C) an inorganic filler; and
(D) a dispersant which is a mixture of a dispersant and a surfactant,
the lowest melt viscosity eta of the resin composition for sealing a semiconductor is measured under the following conditions < conditions for measuring melt viscosity >minIs 1 to 68000 mPas inclusive,
the resin composition for semiconductor encapsulation is in the form of particles,
< condition for measuring melt viscosity >
At the temperature of the mold: 175 ℃, injection rate Q: 178mm3In terms of a/second, a composition having a width W: 15mm, thickness D: 1mm, length: the measurement was performed by a slit-type viscosity measuring apparatus having a rectangular flow passage of 175mm, and the lowest melt viscosity 5 seconds after the start of the melt viscosity measurement was defined as ηmin。
2. The resin composition for semiconductor encapsulation according to claim 1,
the dispersant (D) is a polymeric ionic dispersant having a polycarboxylic acid as a main skeleton.
3. The resin composition for semiconductor encapsulation according to claim 2,
the polymeric ionic dispersant using polycarboxylic acid as a main skeleton comprises a compound represented by the following formula (3),
in the formula (3), p and m represent the number of repeating units, p is an integer of 1 to 20, m is an integer of 1 to 5, R3The alkyl group has 1 to 10 carbon atoms and may have a substituent.
4. The resin composition for semiconductor encapsulation according to any one of claims 1 to 3,
the thermosetting resin comprises the epoxy resin, and the epoxy resin comprises at least one selected from biphenyl type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, multifunctional epoxy resin, phenol aralkyl type epoxy resin, naphthol type epoxy resin, triazine nucleus-containing epoxy resin, and bridged cyclic hydrocarbon compound modified phenol type epoxy resin.
5. The resin composition for semiconductor encapsulation according to any one of claims 1 to 4,
further comprises (E) a curing accelerator.
6. The resin composition for semiconductor encapsulation according to any one of claims 1 to 5,
the inorganic filler (C) contains at least one selected from silica and alumina.
7. The resin composition for semiconductor encapsulation according to any one of claims 1 to 6,
the amount of the dispersant (D) is 0.1 to 2.0 mass% based on the whole resin composition.
8. The resin composition for semiconductor encapsulation according to any one of claims 1 to 7,
the amount of the inorganic filler (C) is 80.0 to 97.0 mass% based on the entire resin composition.
9. The resin composition for semiconductor encapsulation according to any one of claims 1 to 8,
will reach said minimum melt viscosity eta measured under said < melt viscosity measurement conditions >minIs t1, until the minimum melt viscosity eta is reachedminThen the melt viscosity rises and becomes (eta)min+1000) mPas or more at t2, and t 2-t 1 is 1 to 30 seconds.
10. The resin composition for semiconductor encapsulation according to any one of claims 1 to 9,
reaching said minimum melt viscosity ηminTime t1 is 5 seconds to 15 seconds.
11. The resin composition for semiconductor encapsulation according to any one of claims 1 to 10,
the filling rate (%) of the portion where the heated resin composition is melt-spread on the bottom surface of the aluminum cup, as measured in the test below < meltability > is 30% to 100%,
< meltability >
A resin composition (7g) was charged into an aluminum cup having a diameter of 50mm, an outer peripheral height of 10mm and a thickness of 70 μm, the aluminum cup was heated in an oven set at 175 ℃ for 3 minutes, the cured resin composition was taken out of the aluminum cup, and when the area of the contact portion where the molten resin composition contacted the bottom surface of the aluminum cup was A1 and the area of the void portion where the molten resin composition did not contact the bottom surface of the aluminum cup was A2, "filling rate (%)" was calculated from the following formula (1),
the filling rate [% ] is (a1/(a1+ a2)) × 100 … … (1).
12. A semiconductor device, comprising:
a semiconductor element mounted on the substrate; and
a sealing member for sealing the semiconductor element,
the sealing member is composed of a cured product of the resin composition for sealing a semiconductor according to any one of claims 1 to 11.
13. A resin composition for sealing a semiconductor, comprising:
(A) an epoxy resin;
(B) a curing agent;
(C) an inorganic filler; and
(D) a dispersant which is a mixture of a dispersant and a surfactant,
the epoxy resin (A) contains at least one selected from biphenyl type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, polyfunctional epoxy resin, phenol aralkyl type epoxy resin, naphthol type epoxy resin, triazine nucleus-containing epoxy resin and bridged ring hydrocarbon compound-modified phenol type epoxy resin,
the dispersant (D) is a polymeric ionic dispersant having a polycarboxylic acid as a main skeleton, and the amount of the dispersant (D) is 0.01 to 5.0 mass% based on the entire resin composition.
14. The resin composition for semiconductor encapsulation according to claim 13,
the resin composition for sealing a semiconductor is in the form of an ingot or a sheet.
15. The resin composition for semiconductor encapsulation according to claim 13,
the resin composition for semiconductor encapsulation is in the form of particles.
16. The resin composition for semiconductor encapsulation according to any one of claims 13 to 15,
also comprises bismaleimide resin.
17. The resin composition for semiconductor encapsulation according to any one of claims 13 to 16,
minimum melt viscosity eta measured under the following conditions of measurement of melt viscosity [ ]minIs 1 to 68000 mPas inclusive,
< condition for measuring melt viscosity >
At the temperature of the mold: 175 ℃, injection rate Q: 178mm3In terms of a/second, a composition having a width W: 15mm, thickness D: 1mm, length: 175mm rectangular shaped flowThe measurement was performed by a slit-type viscosity measuring device, and the lowest melt viscosity 5 seconds after the start of the melt viscosity measurement was taken as ηmin。
18. The resin composition for semiconductor encapsulation according to any one of claims 13 to 17,
the polymeric ionic dispersant using polycarboxylic acid as a main skeleton comprises a compound represented by the following formula (3),
in the formula (3), p and m represent the number of repeating units, p is an integer of 1 to 20, m is an integer of 1 to 5, R3The alkyl group has 1 to 10 carbon atoms and may have a substituent.
19. The resin composition for semiconductor encapsulation according to any one of claims 13 to 18,
further comprises (E) a curing accelerator.
20. The resin composition for semiconductor encapsulation according to any one of claims 13 to 19,
the inorganic filler (C) contains at least one selected from silica and alumina.
21. The resin composition for semiconductor encapsulation according to any one of claims 13 to 20,
the amount of the dispersant (D) is 0.1 to 2.0 mass% based on the whole resin composition.
22. The resin composition for semiconductor encapsulation according to any one of claims 13 to 21,
the amount of the inorganic filler (C) is 80.0 to 97.0 mass% based on the entire resin composition.
23. A semiconductor device, comprising:
a semiconductor element mounted on the substrate; and
a sealing member for sealing the semiconductor element,
the sealing member is composed of a cured product of the resin composition for sealing a semiconductor according to any one of claims 13 to 22.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019158029 | 2019-08-30 | ||
| JP2019-158029 | 2019-08-30 | ||
| PCT/JP2020/032084 WO2021039809A1 (en) | 2019-08-30 | 2020-08-25 | Semiconductor encapsulation resin composition, and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114364736A true CN114364736A (en) | 2022-04-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080060595.3A Pending CN114364736A (en) | 2019-08-30 | 2020-08-25 | Resin composition for semiconductor encapsulation and semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP6950854B2 (en) |
| KR (1) | KR102435734B1 (en) |
| CN (1) | CN114364736A (en) |
| TW (1) | TW202116560A (en) |
| WO (1) | WO2021039809A1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016009814A (en) * | 2014-06-26 | 2016-01-18 | 京セラケミカル株式会社 | Resin sheet for sealing semiconductor, and resin seal-type semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5189606B2 (en) | 2010-01-26 | 2013-04-24 | パナソニック株式会社 | Epoxy resin composition for semiconductor encapsulation, and semiconductor device |
| JP6675155B2 (en) * | 2015-05-20 | 2020-04-01 | 京セラ株式会社 | Die attach paste for semiconductor and semiconductor device |
| JP6789030B2 (en) * | 2016-08-09 | 2020-11-25 | 京セラ株式会社 | Encapsulating resin composition and semiconductor device |
| JP6701039B2 (en) * | 2016-09-08 | 2020-05-27 | 京セラ株式会社 | Resin composition for semiconductor adhesion and semiconductor device |
| TWI663203B (en) * | 2017-02-14 | 2019-06-21 | 日商京瓷股份有限公司 | Resin sheet, semiconductor device, and method for manufacturing semiconductor device |
-
2020
- 2020-08-25 KR KR1020227009993A patent/KR102435734B1/en active IP Right Grant
- 2020-08-25 CN CN202080060595.3A patent/CN114364736A/en active Pending
- 2020-08-25 JP JP2021521068A patent/JP6950854B2/en active Active
- 2020-08-25 WO PCT/JP2020/032084 patent/WO2021039809A1/en active Application Filing
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|---|---|---|---|---|
| JP2016009814A (en) * | 2014-06-26 | 2016-01-18 | 京セラケミカル株式会社 | Resin sheet for sealing semiconductor, and resin seal-type semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021039809A1 (en) | 2021-03-04 |
| KR102435734B1 (en) | 2022-08-25 |
| TW202116560A (en) | 2021-05-01 |
| KR20220047384A (en) | 2022-04-15 |
| JP6950854B2 (en) | 2021-10-13 |
| JPWO2021039809A1 (en) | 2021-09-13 |
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