CN114337853B - Pulse modulation device for simulating Gaussian waveform - Google Patents
Pulse modulation device for simulating Gaussian waveform Download PDFInfo
- Publication number
- CN114337853B CN114337853B CN202210056081.1A CN202210056081A CN114337853B CN 114337853 B CN114337853 B CN 114337853B CN 202210056081 A CN202210056081 A CN 202210056081A CN 114337853 B CN114337853 B CN 114337853B
- Authority
- CN
- China
- Prior art keywords
- pin diode
- pulse
- low
- gaussian
- bias resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims description 23
- 238000010586 diagram Methods 0.000 description 5
- 230000003321 amplification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Landscapes
- Amplitude Modulation (AREA)
Abstract
The invention relates to a pulse modulation device for simulating Gaussian waveform, which comprises a PIN diode D10 and a PIN diode D20; a bias resistor R10 and a bias resistor 20; a low pass filter; the modulated pulse signals form Gaussian pulse low-frequency signals after passing through a low-pass filter, and the Gaussian pulse low-frequency signals are respectively connected to the P poles of a PIN diode D10 and a PIN diode D20; the N pole of the PIN diode D10 is grounded through a bias resistor R10, and the N pole of the PIN diode D20 is grounded through a bias resistor R20; the carrier signal RFIN is coupled to the N pole of PIN diode D10 and the N pole of PIN diode D20 forms the modulated output signal RFOUT. The invention greatly reduces the number of devices and the debugging time is obviously reduced, thereby greatly improving the reliability and the economy of the modulation circuit.
Description
Technical Field
The invention relates to the field of wireless communication, in particular to a pulse modulation device for simulating Gaussian waveform.
Background
In the prior art, the general pulse modulation adopts base modulation or grid modulation, and the amplification of an amplifier is controlled by a base or grid so as to output corresponding analog pulse modulation.
A conventional pulse modulation schematic is shown in fig. 1: the amplifying state of the amplifier A is controlled by the grid electrode g/base electrode b, and when the pulse signal on the grid electrode g/base electrode b is at a high level, the amplifier works to amplify the input CW wave; when the gate/base pulse signal is low, the amplifier is turned off; the amplification state of the amplifier is in accordance with the on/off state of the pulse signal, so that a CW wave with a pulse waveform, i.e., a pulse modulation wave, is obtained.
Since the pulse modulation waveform generated by the pulse modulation principle shown in fig. 1 does not conform to the characteristics of the gaussian waveform, a gaussian filter must be added to generate the gaussian waveform after filtering. The conventional process of the gaussian pulse waveform is shown in fig. 2, and after a gaussian filter is added to the output end of the conventional pulse modulation to filter, the CW wave with the pulse waveform is subjected to gaussian filtering to form a gaussian waveform.
The conventional gaussian pulse modulation circuit described above has inherent drawbacks.
1. There are many devices that require 1 amplifier, 1 gaussian filter and corresponding peripheral circuits.
2. The amplifier has nonlinear distortion, that is, the gain is nonlinear, and as the input power increases, the amplifying performance of the amplifier changes, resulting in waveform distortion.
3. Because the amplifier is an active device, other defects such as self-excitation oscillation, stray, harmonic waves and the like can be introduced, and the failure rate is relatively high.
Disclosure of Invention
Aiming at the defects of the prior amplifier pulse modulation circuit, the invention provides a pulse modulation device for simulating Gaussian waveform, which can conveniently change the output waveform without a Gaussian filter.
The technical scheme adopted by the invention for realizing the technical purpose is as follows: a pulse modulation device simulating Gaussian waveform, comprising a PIN diode D10 and a PIN diode D20; a bias resistor R10 and a bias resistor R20; a low pass filter; the modulated pulse signals form Gaussian pulse low-frequency signals after passing through a low-pass filter, and the Gaussian pulse low-frequency signals are respectively connected to the P poles of a PIN diode D10 and a PIN diode D20; the N pole of the PIN diode D10 is grounded through a bias resistor R10, and the N pole of the PIN diode D20 is grounded through a bias resistor R20; the carrier signal RFIN is coupled to the N pole of PIN diode D10 and the N pole of PIN diode D20 forms the modulated output signal RFOUT.
Further, in the above-described pulse modulation apparatus for simulating gaussian waveform: the low-pass filter comprises a tuning capacitor and a tuning resistor R30; the modulated pulse signals are connected with direct current ground through a tuning capacitor and then are respectively connected with the P poles of a PIN diode D10 and a PIN diode D20 through a tuning resistor R30.
Further, in the above-described pulse modulation apparatus for simulating gaussian waveform: the tuning capacitor is formed by connecting a tuning capacitor C10 and a tuning capacitor C20 in parallel.
The invention greatly reduces the number of devices and the debugging time is obviously reduced, thereby greatly improving the reliability and the economy of the modulation circuit.
The invention will now be described in detail with reference to the drawings and to specific embodiments.
Drawings
FIG. 1 is a schematic block diagram of a conventional pulse modulation scheme;
FIG. 2 is a diagram of a conventional Gaussian pulse modulation circuit at present;
FIG. 3 is a schematic block diagram of a pulse modulation apparatus for simulating Gaussian waveforms according to the present invention;
fig. 4 is a schematic block diagram of a pulse modulation apparatus for simulating gaussian waveform according to embodiment 1 of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described examples are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Embodiment 1, this embodiment is a pulse modulation apparatus simulating gaussian waveform, and a schematic block diagram is shown in fig. 3, and includes a PIN diode D10 and a PIN diode D20; a bias resistor R10 and a bias resistor R20; a low pass filter; the modulated pulse signals form Gaussian pulse low-frequency signals after passing through a low-pass filter, and the Gaussian pulse low-frequency signals are respectively connected to the P poles of a PIN diode D10 and a PIN diode D20; the N pole of the PIN diode D10 is grounded through a bias resistor R10, and the N pole of the PIN diode D20 is grounded through a bias resistor R20; the carrier signal RFIN is coupled to the N pole of PIN diode D10 and the N pole of PIN diode D20 forms the modulated output signal RFOUT.
Wherein the low-pass filter comprises a tuning capacitor and a tuning resistor R30; the modulated pulse signals are connected with direct current ground through a tuning capacitor and then are respectively connected with the P poles of a PIN diode D10 and a PIN diode D20 through a tuning resistor R30. Wherein the tuning capacitor is formed by tuning capacitor C10 and tuning capacitor C20 in parallel.
The main functional devices constituting the present embodiment include a bias resistor R10, a PIN diode D10, a tuning resistor R30, a PIN diode D20, a bias resistor R20, a tuning capacitor C10, and a tuning capacitor C20.
The function of each device is as follows:
bias resistor R10: the bias resistor R10 is adjusted to provide the PIN diode D10 with a bias current, so that the on current of the PIN diode D10 can be changed.
Bias resistor R20: the bias resistor R20 is adjusted to provide the PIN diode D20 with a bias current, so that the on current of the PIN diode 2 can be changed.
Resonance resistance R30: the device has the functions of isolating radio frequency (high-frequency carrier) signals, communicating direct current (low-frequency pulse) signals and forming an RC delay circuit with a tuning capacitor.
Tuning capacitor C10 and tuning capacitor C20 are connected in parallel to form a tuning capacitor: the rising and falling edge slopes of the pulse signal are adjusted to form an RC delay circuit in cooperation with the resonance resistor 30, so that the pulse signal is changed into a Gaussian pulse waveform.
Fig. 4 shows a specific pulse modulation circuit simulating gaussian waveform, and the basic working principle of this embodiment is as follows: the pulse signal (modulated signal) is amplified by an amplifying circuit consisting of an operational amplifier U1A and a resistor R1, is subjected to a circuit consisting of a resistor R2 and a diode D1 which are connected in parallel, is subjected to a tuning capacitor C1, a tuning capacitor C2 and a resistor R3 to form a low-frequency signal of Gaussian pulse, and is loaded onto serially connected PIN diodes D2 and D3 and serially connected diodes D4 and D5 to form a radio-frequency channel with certain impedance; the carrier wave CW signal is switched on and off according to the shape of Gaussian waveform under the bias of pulse signal through PIN diode D10 composed of serial PIN diodes D2 and D3 and PIN diode D20 composed of serial diodes D4 and D5, and finally a modulation signal is formed and then output.
The specific principle in the embodiment is as follows:
The PIN diode characteristic can form an attenuation resistor on radio frequency according to the loaded bias voltage, the change rule of the attenuation resistor and the bias voltage are in linear relation, so when the bias voltage changes like a Gaussian waveform, the change of the attenuation resistor also becomes a radio frequency attenuation network in a Gaussian waveform, and when a radio frequency signal carrier wave CW passes through the attenuation network, the signal is attenuated regularly according to the Gaussian waveform characteristic, and finally a Gaussian pulse modulation waveform is formed.
Claims (1)
1. A pulse modulation apparatus for simulating gaussian waveforms, characterized in that:
Including a PIN diode D10 and a PIN diode D20; a bias resistor R10 and a bias resistor R20; a low pass filter;
The modulated pulse signals form Gaussian pulse low-frequency signals after passing through a low-pass filter, and the Gaussian pulse low-frequency signals are respectively connected to the P poles of a PIN diode D10 and a PIN diode D20;
The N pole of the PIN diode D10 is grounded through a bias resistor R10, and the N pole of the PIN diode D20 is grounded through a bias resistor R20;
The carrier signal RFIN is connected with the N electrode of the PIN diode D10, and the N electrode of the PIN diode D20 forms a modulated output signal RFOUT;
The low-pass filter comprises a tuning capacitor and a tuning resistor R30; the modulated pulse signal is connected with direct current ground through a tuning capacitor and then is respectively connected with the P poles of a PIN diode D10 and a PIN diode D20 through a tuning resistor R30;
The tuning capacitor is formed by connecting a tuning capacitor C10 and a tuning capacitor C20 in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210056081.1A CN114337853B (en) | 2022-01-18 | 2022-01-18 | Pulse modulation device for simulating Gaussian waveform |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210056081.1A CN114337853B (en) | 2022-01-18 | 2022-01-18 | Pulse modulation device for simulating Gaussian waveform |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114337853A CN114337853A (en) | 2022-04-12 |
| CN114337853B true CN114337853B (en) | 2024-05-07 |
Family
ID=81028395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210056081.1A Active CN114337853B (en) | 2022-01-18 | 2022-01-18 | Pulse modulation device for simulating Gaussian waveform |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114337853B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101726712A (en) * | 2009-11-20 | 2010-06-09 | 中国科学院武汉物理与数学研究所 | Radio frequency signal generating device |
| CN204304996U (en) * | 2014-12-31 | 2015-04-29 | 陕西烽火电子股份有限公司 | A kind of radio frequency power amplifying device for ultrashort wave radio set |
| CN216490516U (en) * | 2022-01-18 | 2022-05-10 | 广东圣大电子有限公司 | Pulse modulation device for simulating Gaussian waveform |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7869526B2 (en) * | 2005-12-19 | 2011-01-11 | University Of South Florida | System and method for a single stage tunable ultra-wideband pulse generator |
-
2022
- 2022-01-18 CN CN202210056081.1A patent/CN114337853B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101726712A (en) * | 2009-11-20 | 2010-06-09 | 中国科学院武汉物理与数学研究所 | Radio frequency signal generating device |
| CN204304996U (en) * | 2014-12-31 | 2015-04-29 | 陕西烽火电子股份有限公司 | A kind of radio frequency power amplifying device for ultrashort wave radio set |
| CN216490516U (en) * | 2022-01-18 | 2022-05-10 | 广东圣大电子有限公司 | Pulse modulation device for simulating Gaussian waveform |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114337853A (en) | 2022-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107404289B (en) | Power amplifying module | |
| CN109560777B (en) | Active bias Casode radio frequency amplifier | |
| CN110138350A (en) | A kind of power amplifier with harmonic suppression circuit | |
| CN216490516U (en) | Pulse modulation device for simulating Gaussian waveform | |
| GB713674A (en) | Improvements in frequency converters | |
| JP2000049874A (en) | Ask modulator and ask modulation method | |
| US20100271119A1 (en) | Envelope detector, linearization circuit, amplifier circuit, method for detecting a modulation envelope and wireless communication unit | |
| CN114362690A (en) | High-linearity ultra-wideband amplifier | |
| CN114337853B (en) | Pulse modulation device for simulating Gaussian waveform | |
| CN102570985B (en) | Power amplifying circuit for powerline multicarrier communication systems | |
| CN110995182B (en) | Power amplifying circuit | |
| US20070146077A1 (en) | Radio frequency power amplifier | |
| CN114142818A (en) | Radio frequency power amplifier applied to 5G-Sub6G frequency band communication system | |
| CN211063579U (en) | X-waveband low-noise amplifier | |
| JPH05315862A (en) | Amplifier circuit | |
| CN208874541U (en) | Power amplifier module | |
| US20220294401A1 (en) | Power amplifier circuit, high frequency circuit, and communication apparatus | |
| CN104242831A (en) | Wideband amplification device with low noise | |
| CN205160476U (en) | Power amplifier with distortion compensating circuit | |
| CN110719077B (en) | Power amplifier and electronic equipment | |
| CN210297646U (en) | Low-noise amplification module | |
| CN207283507U (en) | A kind of radio-frequency power amplifier output circuit with gain-adjusted | |
| US3845403A (en) | Amplifier for amplitude modulated waves with means for improving sideband response | |
| US8878604B2 (en) | Switching circuit and envelope signal amplifier | |
| WO2024103442A1 (en) | Radio-frequency power amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |