CN114336282B - GaN-based vertical cavity surface emitting laser with conductive DBR structure and manufacturing method thereof - Google Patents
GaN-based vertical cavity surface emitting laser with conductive DBR structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN114336282B CN114336282B CN202011078799.8A CN202011078799A CN114336282B CN 114336282 B CN114336282 B CN 114336282B CN 202011078799 A CN202011078799 A CN 202011078799A CN 114336282 B CN114336282 B CN 114336282B
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- dbr structure
- dbr
- gan
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 115
- 238000000034 method Methods 0.000 claims abstract description 64
- 230000008569 process Effects 0.000 claims abstract description 49
- 230000015556 catabolic process Effects 0.000 claims abstract description 39
- 238000012545 processing Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 50
- 150000004767 nitrides Chemical class 0.000 claims description 25
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 20
- 230000005684 electric field Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 19
- 239000007924 injection Substances 0.000 abstract description 19
- 238000002360 preparation method Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 127
- 238000002310 reflectometry Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000013021 overheating Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241000155258 Plebejus glandon Species 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 241000962283 Turdus iliacus Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The application discloses a GaN-based Vertical Cavity Surface Emitting Laser (VCSEL) with a conductive DBR structure and a preparation method thereof. The VCSEL comprises a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are respectively connected with a first DBR structure and a second DBR structure, the second DBR structure is a conductive DBR structure, and the conductive DBR structure is formed by processing a dielectric DBR structure by adopting an electrical breakdown process; either one of the first and second semiconductor layers is an n-type semiconductor layer, and the other is a p-type semiconductor layer. The VCSEL adopts the conductive medium DBR structure, so the electrode injection efficiency is high, the stable operation can be realized under a larger current, the service life is long, the manufacturing process is simple, the controllability is good, the cost is low, and the product yield is high.
Description
Technical Field
The present application relates to a GaN-based Vertical Cavity Surface emitting laser (Vertical-Cavity Surface-EMITTING LASER, VCSEL), and more particularly, to a GaN-based Vertical Cavity Surface emitting laser having a conductive DBR structure and a method of fabricating the same.
Background
Semiconductor lasers based on group iii nitride materials are receiving general attention for their advantages of high efficiency, low loss, small volume, long lifetime, light weight, etc. Conventional edge-emitting lasers, which generate optical gain based on a resonant cavity perpendicular to the surface of the thin film, are the dominant structures of lasers. Compared with the edge-emitting laser, the GaN-based Vertical Cavity Surface-emitting laser (Vertical-Cavity Surface-EMITTING LASER, VCSEL) has the advantages of small active area volume, easy realization of single longitudinal mode luminescence, low lasing threshold, small divergence angle, high coupling efficiency with optical fibers and other optical elements and the like; in addition, the VCSEL can realize high-speed modulation and can be applied to a long-distance and high-speed optical fiber communication system. Based on the characteristics, the VCSEL device has huge application prospect in the fields of displays, biological sensing, optical communication and the like.
Since Redwing et al in 1996 successfully prepared optically pumped GaN-based VCSELs for the first time, VCSELs emitting light in the visible band have come into view. Researchers have successfully prepared VCSELs of continuous wavelength electro-injection GaN-based dual-medium Bragg reflectors (DBRs) at room temperature for the first time by using a bonding and substrate laser lift-off technology, wherein the threshold current is 7mA and the light emitting wavelength is about 414nm. Researchers develop an electric injection type GaN-based VCSEL by optimizing a laser stripping process of a sapphire substrate, optimizing a gain region design and a manufacturing process of a high-reflectivity dielectric DBR, and realizing laser emission under the condition of a room-temperature optical pump, wherein the luminous wavelength is 449.5nm, and the threshold value is 6.5mJ/cm 2. For the reported GaN VCSELs, the technical difficulty is to obtain a high reflectivity mirror. The upper reflector is generally made of a dielectric DBR with a mature process, such as SiO 2/HfO2, and the like, with a larger refractive index difference, and the lower reflector is made of a dielectric DBR and a nitride DBR. For example, the AlN/GaN epitaxial film is used as the lower DBR, so that the problems of yield and cost caused by a flip-chip process can be avoided, but the crystal quality of the nitride DBR is low due to serious lattice mismatch and thermal mismatch between AlN/GaN interfaces, the refractive index difference of AlN/GaN is small, the DBR with a large number of growth cycles is required to realize higher reflectivity, the epitaxial difficulty degree is further increased, and the risk of film cracking is increased. If the dielectric DBR is adopted as the lower DBR, the nitride active layer cannot be directly epitaxially grown on the dielectric material, so that a bonding and epitaxial layer laser lift-off technology is required to prepare the flip chip, thereby preparing the double-dielectric GaN VCSEL.
The conductivity of the nitride DBR or the dielectric DBR is poor, so that current cannot be directly transmitted and expanded through the DBR, a step structure can be formed on the side edge only through an etching process, and an ohmic contact electrode is deposited. This tends to cause a number of problems, such as: the current congestion effect is easy to occur, the stability of the device is low, the device is easy to age, the preparation process is complex, the cost is high, the yield is low, and the like.
To alleviate such problems, one solution has been to develop DBRs with high conductivity characteristics to produce vertical structure VCSEL devices, improve current crowding effects, increase current density, and lower lasing threshold. Researchers have proposed using transparent conductive materials, either ITO or TiN, alternating to provide reflection and making vias in DBRs based on etching techniques. In addition to using transparent conductive layers as conductive DBR materials, there are researchers using porous conductive GaN DBR where the DBR is electrochemically etched to form a multicycle DBR structure of alternately stacking porous GaN with high void fraction and porous GaN with low void fraction, and a GaN-based VCSEL having the porous GaN conductive DBR structure is fabricated.
The preparation of a conductive DBR with high refractive index difference and high crystal quality is the key for obtaining a GaN-based VCSEL device with high power, low threshold and large current injection. Although the process for preparing the conductive DBR by the transparent conductive film (ITO and the like) is simple and feasible, the realization of a large refractive index difference in actual operation is difficult, and if the DBR with higher reflectivity is required to be obtained, a plurality of transparent conductive layers with the same number of layers are required to be grown, so that the economic and time costs are higher; the porous GaN is adopted to prepare the conductive DBR structure, a large number of layers are required to grow to obtain high reflectivity, and electrochemical corrosion adopted by the porous GaN is difficult to accurately control the refractive index of each layer of GaN, so that the overall reflectivity of the device is reduced, the process stability is required to be improved, and the luminous efficiency of the device is influenced.
Disclosure of Invention
The application aims to provide a GaN-based vertical cavity surface emitting laser with a conductive DBR structure and a manufacturing method thereof, which overcome the defects in the prior art.
In order to achieve the above purpose, the present application provides the following technical solutions:
The embodiment of the application provides a GaN-based vertical cavity surface emitting laser with a conductive DBR structure, which comprises a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are respectively connected with the first DBR structure and the second DBR structure, the second DBR structure is the conductive DBR structure, the conductive DBR structure is formed by processing a dielectric DBR structure by adopting an electrical breakdown process, and the first semiconductor layer is also electrically connected with a first electrode; either one of the first semiconductor layer and the second semiconductor layer is an n-type semiconductor layer, and the other is a p-type semiconductor layer.
In some embodiments, the second DBR structure is bonded to a conductive substrate that serves as at least a second electrode.
In some embodiments, the GaN-based vertical cavity surface emitting laser includes a substrate, a first DBR structure, a first semiconductor layer, an active layer, a second semiconductor layer, and a second DBR structure disposed in order along a designated direction, the first semiconductor layer and the second DBR structure being electrically coupled to a first electrode and a second electrode, respectively.
The embodiment of the application also provides a manufacturing method of the GaN-based vertical cavity surface emitting laser with the conductive DBR structure, which comprises the following steps:
sequentially growing a first semiconductor layer, an active layer and a second semiconductor layer;
Growing a dielectric DBR structure on the second semiconductor layer, forming a conductive channel in the dielectric DBR structure through an electrical breakdown process to obtain a conductive second DBR structure, and bonding the second DBR structure with a conductive substrate, wherein the conductive substrate is at least used as a second electrode;
a first DBR structure is grown on a first semiconductor layer, and a first electrode is disposed on the first semiconductor layer.
The embodiment of the application also provides a manufacturing method of the GaN-based vertical cavity surface emitting laser with the conductive DBR structure, which comprises the following steps:
Sequentially growing to form a nitride DBR structure, a first semiconductor layer, an active layer, a second semiconductor layer and a medium DBR structure, wherein the nitride DBR structure is used as the first DBR structure;
Forming a conductive channel in the dielectric DBR structure through an electrical breakdown process to obtain a conductive second DBR structure; and a first electrode and a second electrode are respectively arranged on the first semiconductor layer and the second DBR structure.
In some embodiments, the electrical breakdown process includes: and depositing more than one metal point on the dielectric DBR structure, and then applying breakdown voltage between the more than one metal point and the second semiconductor layer to form a conductive channel in the dielectric DBR structure so as to obtain the conductive DBR structure.
Compared with the prior art, the technical scheme provided by the embodiment of the application has at least the following beneficial effects:
(1) The conductive DBR is obtained by utilizing an electrical breakdown process, the electrodes are in direct contact with the conductive DBR, a formed vertical circuit structure avoids the current congestion effect existing between the p-GaN and the electrodes, the injection efficiency of the electrodes is improved, the local joule overheating of the p-GaN is relieved, and the service life of the device is prolonged;
(2) The injection area of the p-type metal contact electrode is the whole area of the conductive DBR, and the injection area is increased, so that the device can work under larger current.
(3) When the flip-chip structure is adopted, heat generated in the working process of the device can be dissipated through the conductive substrate, and the heat dissipation capacity is remarkably improved.
(4) When the flip-chip structure is adopted, the upper Bragg reflector and the lower Bragg reflector in the device are both oxide DBRs, the refractive index difference between dielectric films is large, and high reflectivity can be realized;
(5) The device has simple manufacturing process, good controllability, low cost and high product yield.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to the drawings without inventive effort to those skilled in the art.
FIG. 1 is a schematic diagram of a GaN-based VCSEL structure of the prior art;
FIG. 2 is a schematic diagram of a GaN-based VCSEL in accordance with an embodiment of the present application;
FIG. 3 is a schematic diagram of a GaN-based VCSEL manufacturing process according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a GaN-based VCSEL in accordance with another embodiment of the application;
FIG. 5 is a schematic diagram of a GaN-based VCSEL fabrication process according to another embodiment of the application;
Fig. 6 is an I-V graph of a conductive medium DRB before and after electrical breakdown in example 1 of the present application.
Detailed description of the preferred embodiments
In view of the shortcomings in the prior art, the inventor of the present application has long studied and practiced in a large number of ways to propose the technical scheme of the present application. The technical scheme, the implementation process, the principle and the like are further explained as follows.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
As described above, various conventional schemes for fabricating a VCSEL device of a vertical structure using a DBR having high conductivity have more or less drawbacks, and accordingly, the present inventors have made a great deal of research and have found that, in the process, it is theoretically possible to implement a conductive DBR structure by directly fabricating a conductive medium through an electrical breakdown method, thereby hopefully implementing a VCSEL device of a vertical structure and overcoming the drawbacks of the prior art, but related reports have not been made so far in the art.
Although some researchers have used electrical breakdown to obtain conductive structures and applied them to LEDs. For example, researchers deposit thinner (8 nm) AlN on the top of an LED on the top of the LED p-AlGaN, and electrically breakdown the LED p-AlGaN by combining a transparent conductive film ITO, so that a novel AlN/ITO transparent conductive layer is obtained, the generated photons are extracted from the top, and the photon extraction efficiency of the LED is improved. For another example, researchers deposit Ni metal on the surface of AlN at 40nm, produce a conductive Ni/AlN omnidirectional reflector structure (ODR) by electrical breakdown, and further deposit aluminum metal with high uv reflectivity, reflect photons generated by the LED, and extract photons from the substrate site. However, the fundamental starting point of these works is to increase the photon extraction efficiency of the LED, i.e., by creating a balance between the contact resistance and the photon reflectance (or transmittance), to comprehensively increase the light emitting power of the LED device, which does not help to solve the technical problems existing in the existing VCSEL device.
Moreover, considering the significant differences between the LED and the VCSEL in terms of structure and operating principle, the foregoing solution applicable to the LED cannot be directly applied to the process for manufacturing the GaN-based VCSEL device. For example, for LEDs, most of the AlN or oxide films that need to be electrically broken down are single-layer or thinner, and do not require the application of a very high voltage. Whereas DBR thicknesses in VCSELs are typically large, conventional approaches do not achieve electrical breakdown. For another example, the chip area of the LED is large, while the gain area of the VCSEL is small (around 10 microns). In the preparation of the conductive DBR for the VCSEL device, uniformity of the conductive channel must be ensured, and thus, the speed and frequency of the electric field application must be adjusted (for example, the electric field employs an alternating electric field with positive and negative amplitude, which gradually increases from 5V to 50V, the frequency of positive and negative voltage application is 1Hz-100Hz, and the increasing rate of the voltage amplitude is 0.1V/s-10V/s). Furthermore, VCSELs require a greater operating current density (on the order of kA/cm 2) than LEDs and are therefore more sensitive to current crowding effects.
The present inventors have made further studies and a great deal of practice on the basis of the above findings, and have proposed the technical solution of the present application, as will be explained in more detail below.
The GaN-based vertical cavity surface emitting laser with the conductive DBR structure comprises a first semiconductor layer, a second semiconductor layer and an active layer, wherein the active layer is arranged between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the second semiconductor layer are respectively connected with the first DBR structure and the second DBR structure, the second DBR structure is the conductive DBR structure, and the first semiconductor layer is also electrically connected with a first electrode; either one of the first semiconductor layer and the second semiconductor layer is an n-type semiconductor layer, and the other is a p-type semiconductor layer.
Further, the conductive DBR structure is formed by processing the dielectric DBR structure by using an electrical breakdown process, and thus may be defined as a conductive dielectric DBR structure.
In some embodiments, the second DBR structure is bonded to a conductive substrate that serves as at least a second electrode.
Further, the conductive substrate includes a metal sheet (e.g., cu, al, ag sheet, etc.) mirror-polished on the surface, a transparent conductive film (e.g., ITO, etc.), or a high doping concentration Si sheet with an ohmic electrode deposited on the bottom, etc., and is not limited thereto.
Further, the conductive substrate used as the p-type contact electrode includes, but is not limited to, diamond, graphite, si, siC, and the like having good conductive properties.
In some embodiments, the GaN-based vertical cavity surface emitting laser includes a conductive substrate, a second DBR structure, a second semiconductor layer, an active layer, a first semiconductor layer, and a first DBR structure disposed in order along a designated direction, the first semiconductor layer being electrically coupled to a first electrode. In these embodiments, the GaN-based vertical cavity surface emitting lasers may be considered flip-chip structures.
Further, the first semiconductor layer forms an ohmic contact with the first electrode.
Further, an end face of the second DBR structure remote from the second semiconductor layer is bonded to the conductive substrate.
In the foregoing embodiments, the first DBR structure may employ various types of DBRs known in the art, such as a nitride DBR, an oxide DBR, and the like.
Further, the material of the nitride DBR may include any one or more combinations of AlN, gaN, inGaN, alGaN, but is not limited thereto.
Further, the oxide DBR may be made of any one or more of SiO 2、HfO2、TiO2 and ZnO, but is not limited thereto.
In some embodiments, the GaN-based vertical cavity surface emitting laser includes a substrate, a first DBR structure, a first semiconductor layer, an active layer, a second semiconductor layer, and a second DBR structure disposed in order along a designated direction, the first semiconductor layer and the second DBR structure being electrically coupled to a first electrode and a second electrode, respectively. In these embodiments, the GaN-based vertical cavity surface emitting lasers may be considered to be of a front-mounted structure.
Further, the first semiconductor layer forms an ohmic contact with the first electrode.
Further, the substrate may be a sapphire substrate, a Si substrate, a SiC substrate, a GaN substrate, or the like, and is not limited thereto.
Further, the implantation area of the second electrode is the entire area of an end surface of the second DBR structure away from the second semiconductor layer.
Further, the second electrode directly injects a current into the optical confinement aperture.
In these embodiments, the first DBR structure is a nitride DBR, and the material of the first DBR structure includes, but is not limited to, alN, gaN, inGaN, alGaN or any one or more combinations of nitrides.
In the present specification, the aforementioned specified direction may be from top to bottom, bottom to top, left to right, right to left, front to back, or back to front, and so on.
In some embodiments, the active layer is a quantum well active region, and the material thereof may be of a type known in the art, such as InGaN/GaN multiple quantum wells, but is not limited thereto.
In some embodiments, the dielectric DBR structure used to form the second DBR structure includes an oxide DBR made of a material including, but not limited to, any one or more of SiO 2、HfO2、TiO2, znO, and the like oxides.
In some embodiments, the first semiconductor layer is an n-type semiconductor layer and the second semiconductor layer is a p-type semiconductor layer.
In some embodiments, the first electrode may be defined as an n-type contact electrode or an n-type metal contact electrode, and the second electrode may be defined as a p-type contact electrode or a p-type metal contact electrode.
In addition, the GaN-based vertical cavity surface emitting laser according to the above embodiment of the present application may further include other structural layers commonly used in the art, such as an electron blocking layer, a current confinement layer, a current spreading layer, etc., according to practical requirements.
The GaN-based VCSEL device has a larger operating current density and a larger impact of current crowding effects on its performance than other VCSEL devices. According to the embodiments of the application, the conductive DBR structure is directly prepared on the conductive substrate, so that the step of etching a plasma table surface of a transverse structure can be avoided, the preparation process of a bottom electrode is omitted, the high reflectivity of the dielectric DBR is ensured, the process steps of the device are greatly simplified, the current injection area is greatly increased, the current congestion effect caused by the annular electrode is effectively relieved, and the current injection efficiency is improved.
Another aspect of the embodiment of the present application provides a method for manufacturing the GaN-based vertical cavity surface emitting laser, including:
sequentially growing a first semiconductor layer, an active layer and a second semiconductor layer;
Growing a dielectric DBR structure on the second semiconductor layer, forming a conductive channel in the dielectric DBR structure through an electrical breakdown process to obtain a conductive second DBR structure, and bonding the second DBR structure with a conductive substrate, wherein the conductive substrate is at least used as a second electrode;
a first DBR structure is grown on a first semiconductor layer, and a first electrode is disposed on the first semiconductor layer.
Further, the first DBR structure may employ various types of DBRs known in the art, such as a nitride DBR, an oxide DBR, and the like. Wherein the materials of a typical nitride DBR include, but are not limited to, any one or more combinations of AlN, gaN, inGaN, alGaN. Wherein the materials of a typical oxide DBR include, but are not limited to, any one or a combination of several of SiO 2、HfO2、TiO2, znO.
Further, the dielectric DBR structure used to form the second DBR structure includes an oxide DBR, and the material of the dielectric DBR structure includes, but is not limited to, any one or more of SiO 2、HfO2、TiO2, znO, and the like.
Another aspect of the embodiment of the present application provides a method for manufacturing the GaN-based vertical cavity surface emitting laser, including:
Sequentially growing to form a nitride DBR structure, a first semiconductor layer, an active layer, a second semiconductor layer and a medium DBR structure, wherein the nitride DBR structure is used as the first DBR structure;
Forming a conductive channel in the dielectric DBR structure through an electrical breakdown process to obtain a conductive second DBR structure; and a first electrode and a second electrode are respectively arranged on the first semiconductor layer and the second DBR structure.
Further, the nitride DBR structure may include any one or more of, but not limited to AlN, gaN, inGaN, alGaN.
Further, the material of the dielectric DBR structure includes, but is not limited to, any one or a combination of several kinds of oxides such as SiO 2、HfO2、TiO2 and ZnO.
In some embodiments, the electrical breakdown process includes: and depositing more than one metal point on the dielectric DBR structure, and then applying breakdown voltage between the more than one metal point and the second semiconductor layer to form a conductive channel in the dielectric DBR structure so as to obtain a conductive second DBR structure.
Further, the conditions of the electrical breakdown process include: the electric field adopts positive and negative alternating electric field, the amplitude is gradually increased from 5V to 50V, the frequency of positive and negative voltage application is 1Hz-100Hz, and the increasing rate of the voltage amplitude is 0.1V/s-10V/s.
In some embodiments, the metal dots may be made of a material including, but not limited to, cr/Al, cr/Ni, al, ni, ag, ti/Al/Ni/Au, etc.
In some embodiments, the metal dots are a plurality and are arranged in an order on the dielectric DBR structure.
In the above embodiments of the present application, the conductive properties of the dielectric DBR, and in particular the oxide DBR, are achieved by preparing ordered metal dots on the dielectric DBR, applying a voltage to the dielectric layer to achieve electrical breakdown, during which metal ions near the negative pole are reduced to metal conductive filaments, and/or anions in the oxide near the positive pole are oxidized to leave anion vacancies, forming conductive channels through the dielectric DBR, thereby allowing the dielectric DBR to be converted to a conductive DBR.
By adopting the scheme provided by the embodiment of the application, the photon extraction efficiency of the GaN-based VCSEL device can be improved, and particularly, the vertical structure VCSEL is formed by the conductive DBR, so that the current congestion effect can be well eliminated, the current collapse at the contact position of the second DBR structure and the electrode is avoided, the injection area of the second electrode can be the whole area of one end surface of the second DBR structure far away from the second semiconductor layer, and the electrode area is far greater than the corresponding electrode in the conventional VCSEL device, so that the stimulated radiation threshold of the VCSEL device is easier to be reached.
The following detailed description of the embodiments of the present application will be made with reference to the accompanying drawings, in which it is evident that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1, a conventional GaN-based VCSEL device includes a substrate 1, a lower DBR structure 2, an n-doped GaN layer 3 (n-GaN layer), a quantum well active region 4, a p-doped GaN layer 5 (p-GaN layer), a SiO 2 current confinement layer 6, an ITO current spreading layer 7, an upper DBR structure 8, an n-type contact electrode 9, a p-type contact electrode 10, and the like. The lower DBR structure 2 is a nitride DBR formed by epitaxial growth, and the upper DBR structure 8 is a dielectric DBR. The defects of the GaN-based VCSEL device include:
(1) The device is of a planar structure, so that current congestion effect is easy to generate, and current input is uneven;
(2) The injection area of the electrode is limited, excessive joule heat is locally generated by the device, the heat cannot be effectively dissipated, the junction temperature of the device is increased, and the stability is reduced;
(3) The preparation process is complex, a SiO 2 current limiting layer, an ITO current expansion layer and the like are required to be deposited, the yield is reduced, and the preparation cost is increased;
(4) The local current density is large, and electromigration of metal is serious at the edge of the mesa, so that the degradation of the device is accelerated.
Aiming at the problems of current congestion and the like caused by the fact that a metal electrode is required to be deposited outside a resonant cavity due to the insulation characteristic of a dielectric DBR in the existing GaN VCSEL device, the embodiment of the application provides a VCSEL device with a conductive dielectric DBR.
Referring to fig. 2, a GaN-based vertical cavity surface emitting laser having a conductive DBR structure according to an embodiment of the present application is a flip-chip structure including a conductive substrate 108, a second DBR structure 105 (conductive DBR), a second semiconductor layer 104, an active layer (quantum well active region 103), a first semiconductor layer 102, and a first DBR structure 101 (dielectric DBR) sequentially disposed from bottom to top.
The first semiconductor layer 102 and the second semiconductor layer 104 may be an n-doped GaN layer and a p-doped GaN layer, respectively.
Wherein an entire surface of an end surface of the second DBR structure 105 remote from the second semiconductor layer 104 is bonded to a conductive substrate 108 through a bonding metal 107, the conductive substrate 108 can be regarded as a p-type contact electrode.
Wherein an n-type contact electrode 109 is provided on the first semiconductor layer 102, which forms an ohmic contact with the first semiconductor layer 102.
In the flip-chip structure VCSEL device provided in this embodiment, the flip-chip structure epitaxial layer and the conductive DBR are bonded to the conductive substrate including a Cu, al, ag sheet with mirror-polished surface or a Si sheet with high doping concentration with an ohmic electrode deposited on the bottom, by a metal bonding process. Due to the adoption of the vertical chip structure, the current injection area can be increased, current injection under large current is realized, the lasing threshold of the device is reduced, the current congestion effect caused by the fact that the electrode is positioned outside the resonant cavity in the traditional process can be relieved, local joule overheating is reduced, and the service life of the device is prolonged.
Referring to fig. 3, a method for fabricating the flip-chip VCSEL device includes the steps of:
(a) First, the n-GaN layer 102, the active layer 103 and the p-GaN layer 104 are epitaxially grown on the substrate 100 (such as sapphire, si, siC substrate), and the dielectric DBR structure 105' (oxide DBR such as SiO 2、HfO2、TiO2, znO may be used) is grown on the p-GaN layer 104;
(b) Depositing a metal dot 106 on the dielectric DBR structure 105';
(c) Applying a voltage between the p-GaN layer 104 and the metal point 106 through an electrical breakdown process, so that a conductive channel is formed inside the dielectric DBR structure 105' to form a conductive DBR (which may be regarded as a p-DBR, i.e., the aforementioned second DBR structure), wherein in the electrical breakdown process, an electric field employs an alternating electric field with an amplitude gradually increasing from 5V to 50V, the frequency of application of the positive and negative voltages is 1Hz to 100Hz, and the rate of increase of the voltage amplitude is 0.1V/s to 10V/s;
(d) Removing the metal dots 106;
(e) After the bonding metal 107 is deposited on the surface of the p-DBR by using a metal bonding process, bonding the epitaxial layer onto a conductive substrate 8 such as a Cu, al or Ag sheet or a highly doped Si substrate, wherein the conductive substrate 8 serves as a p-type metal contact electrode (i.e., the aforementioned p-type contact electrode) and also serves as a support substrate for the epitaxial layer, and then removing the substrate 100 by using a substrate laser lift-off process or removing the substrate 100 by using a lapping and polishing or wet etching process;
(f) The upper dielectric DBR structure 101 (i.e., the aforementioned first DBR structure, which may be, but is not limited to, an oxide DBR such as SiO 2、HfO2、TiO2, znO, etc.) is grown on the epitaxial layer surface after the lift-off, i.e., the surface of the n-GaN layer 102, and an n-type metal contact electrode 109 (i.e., the aforementioned n-type contact electrode) is prepared.
Referring to fig. 4, a GaN-based vertical cavity surface emitting laser having a conductive DBR structure according to another embodiment of the present application is a front-loading structure including a substrate 201, a first DBR structure 202 (epitaxial nitride DBR), a first semiconductor layer 203, an active layer 204 (quantum well active region), a second semiconductor layer 205, and a second DBR structure 206 (conductive DBR) sequentially disposed from bottom to top.
The first semiconductor layer 203 and the second semiconductor layer 205 may be an n-doped GaN layer (n-GaN layer) and a p-doped GaN layer (p-GaN layer), respectively.
The second DBR structure 206 is combined with a p-type metal contact electrode 209 (p-type contact electrode, which may be also defined as a second electrode) on the entire surface of an end surface far from the second semiconductor layer 205.
An n-type metal contact electrode 208 (n-type contact electrode may also be defined as a first electrode) is disposed on the first semiconductor layer 203, and forms an ohmic contact with the first semiconductor layer.
In the VCSEL device with the forward structure provided in this embodiment, the epitaxial nitride DBR structure (i.e., the first DBR structure) may be an AlN/GaN DBR epitaxial by an MOCVD method, while the conductive DBR structure (i.e., the second DBR structure) is formed by an electrical breakdown process, and the p-type contact electrode may be directly added onto the conductive DBR structure, so that large-area current injection may be also realized, the current congestion problem of the ring electrode and the p-GaN is solved, and the current is directly injected into the limiting hole, thereby improving the current injection efficiency.
Referring to fig. 5, a method for fabricating the VCSEL device with the front-mounted structure includes the steps of:
(a) First, a nitride DBR structure 202 (i.e., the aforementioned first DBR structure, e.g., group III nitride DBR structure), an n-GaN layer 203, a quantum well 204, and a p-GaN layer 205 are epitaxially grown on a substrate 201 (e.g., sapphire, si, siC substrate), and a dielectric DBR structure 206' is grown on the p-GaN layer 205;
(b) Depositing a metal point 207 on the dielectric DBR structure 206';
(c) Applying voltage between the p-GaN layer 205 and the metal point 207 through an electrical breakdown process, so that a conductive channel is formed inside the dielectric DBR structure 206' to form a conductive DBR structure 206 (namely the second DBR structure), wherein in the electrical breakdown process, an electric field adopts an alternating electric field with positive and negative amplitude, the amplitude is gradually increased from 5V to 50V, the frequency of applying the positive and negative voltage is 1Hz-100Hz, and the increasing rate of the voltage amplitude is 0.1V/s-10V/s;
(d) Removing the metal points and etching to form n-type contact electrode table tops;
(e) An n-type contact electrode 208, a p-type contact electrode 209 are deposited on the n-type contact electrode mesa, the conductive DBR structure 206, respectively.
More specifically, the method for manufacturing the GaN-based vertical cavity surface emitting laser provided in embodiment 1 of the present application includes:
a. The epitaxial film of the blue laser is epitaxially grown on the sapphire substrate based on Metal Organic Chemical Vapor Deposition (MOCVD), and comprises N-GaN (doping concentration 5×10 18cm-3) with the thickness of about 531nm, 5 pairs of quantum well active regions (In 0.21Ga0.79 N3 nm/GaN 4 nm), p-type Al 0.18Ga0.82 N electron blocking layers with the thickness of about 20nm and p-GaN (doping concentration 8×10 17cm-3) with the thickness of about 180 nm.
B. And (3) alternately growing SiO 2/HfO2 (76 nm/53 nm) p-oxide DBR by adopting electron beam deposition equipment (e-beam), etching the required optical limiting hole size based on a photoetching process, and simultaneously forming steps on the surfaces of the p-oxide DBR and the p-type GaN, so that electrical breakdown is facilitated.
C. Based on the photolithography process, using photoresist as a mask, depositing a plurality of metal points Cr/Al on p-oxide with a diameter of about 10 μm by using e-beam, applying a voltage between the metal points and p-type GaN to the p-oxide DBR by using an electrochemical workstation to break down (wherein the electric field adopts an alternating electric field with an amplitude gradually increasing from 5V to 50V, the frequency of positive and negative voltage application is 1Hz-100Hz, the increasing rate of the voltage amplitude is 0.1V/s-10V/s), and then removing the metal points above the p-oxide DBR by using HCl solution. The voltage-current curve of the p-oxide DBR before and after breakdown is shown in fig. 6.
D. Metal (Cr/Ni/Au) is deposited on the p-oxide DBR and the substrate, and the p-oxide DBR is bonded to the metal based on a bonding process, after which the sapphire substrate is stripped using a laser stripping technique.
E. And growing an oxide DBR (SiO 2/HfO2, 76nm/53 nm) by utilizing electron beam evaporation, and etching through the SiO 2/HfO2 DBR by adopting the combination of lithography and dry etching, so that a step structure is formed between the DBR and n-GaN. And growing an n-type metal contact electrode Ni/Au by using an electron beam evaporation device, wherein the thickness of the n-type metal contact electrode Ni/Au is 20nm/100nm.
More specifically, the method for manufacturing the GaN-based vertical cavity surface emitting laser according to embodiment 2 of the present application includes:
a. Blue laser epitaxial films were epitaxially grown on sapphire substrates based on Metal Organic Chemical Vapor Deposition (MOCVD) including 25 pairs of AlN/GaN (52 nm/46 nm) epitaxial DBRs, N-GaN (doping concentration 5×10 18cm-3) at about 890nm, 5 pairs of quantum well active regions (In 0.21Ga0.79 N3 nm/GaN 4 nm), p-type Al 0.18Ga0.82 N electron barriers at about 20nm, and p-GaN (doping concentration 8×10 17cm-3) at about 250 nm.
B. And alternately growing TiO 2/ZnO (76 nm/53 nm) p-oxide DBR by adopting electron beam deposition equipment (e-beam), etching the required optical limiting hole size based on a photoetching process, and forming steps on the surfaces of the p-oxide DBR and the p-type GaN, so that electrical breakdown is facilitated.
C. based on the photolithography process, a number of metal dots Ag were deposited on the p-oxide using e-beam with a diameter of 10 μm using photoresist as a mask. And applying voltage between the metal point and the p-type GaN by using a direct current power supply to break down the oxide (wherein the electric field adopts positive and negative alternating electric fields, the amplitude is gradually increased from 5V to 50V, the frequency of positive and negative voltage application is 1Hz-100Hz, the voltage amplitude increasing rate is 0.1V/s-10V/s, and finally the current is suddenly increased), and then removing the metal point above the p-oxide DBR by using an HCl solution.
D. etching the mesa to the n-type GaN region based on photoetching and dry etching processes, and facilitating the preparation of the n-type metal contact electrode.
E. the n-type metal contact electrode Ni/Au is grown by using an e-beam device with the thickness of 20nm/100nm, and then the p-type metal contact electrode Ti/Al/Ni/Au is grown by using the e-beam device with the thickness of 10nm/100nm/20nm/50nm.
The GaN-based vertical cavity surface emitting laser provided by the above embodiment of the application has at least the following advantages due to the inclusion of the aforementioned conductive DBR structure:
(1) Specifically, the embodiment of the application utilizes an electrical breakdown process to obtain the conductive DBR, the electrode is directly contacted with the conductive DBR, the formed vertical circuit structure avoids the current congestion effect existing between the p-GaN and the electrode, improves the injection efficiency of the electrode, relieves the local joule overheating of the p-GaN and prolongs the service life of the device.
(2) The current injection area can be significantly increased. In the above embodiment of the present application, the injection area of the p-type metal contact electrode is the whole area of the conductive DBR, and the injection area is increased, which is beneficial to the device working under a larger current.
(3) And the heat dissipation of the device is facilitated. In the above embodiments of the present application, heat generated in the working process of the device with the flip-chip structure can be dissipated from the conductive substrate, and the heat dissipation capability is greatly enhanced compared with that of the sapphire substrate and the like.
(4) The dual-dielectric Bragg reflector has a relatively high reflectivity. In the above embodiment of the present application, the upper and lower bragg reflectors in the device with the flip-chip structure are both oxide DBRs, and the refractive index difference between the dielectric films is large, so that a high reflectivity can be achieved.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is merely illustrative of specific embodiments of this application and it will be appreciated by those skilled in the art that variations and modifications may be made without departing from the principles of the application, and it is intended to cover such modifications and variations as fall within the scope of the application.
Claims (19)
1. The GaN-based vertical cavity surface emitting laser with the conductive DBR structure is characterized by comprising a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are respectively connected with the first DBR structure and the second DBR structure, the first DBR structure is a dielectric DBR, the second DBR structure is a conductive DBR structure, the conductive DBR structure is formed by processing the dielectric DBR structure by adopting an electrical breakdown process, and the first semiconductor layer is further electrically connected with a first electrode; either one of the first semiconductor layer and the second semiconductor layer is an n-type semiconductor layer, and the other one is a p-type semiconductor layer;
wherein the conditions of the electrical breakdown process include: the electric field adopts positive and negative alternating electric fields, the amplitude is gradually increased from 5V to 50V, the increasing rate of the voltage amplitude is between 0.1V/s and 10V/s, and the frequency of positive and negative voltage application is between 1Hz and 100Hz.
2. The GaN-based vertical cavity surface emitting laser according to claim 1, wherein: the second DBR structure is bonded to a conductive substrate that serves as at least a second electrode.
3. The GaN-based vertical cavity surface emitting laser according to claim 2, wherein: the conductive substrate includes a metal sheet with mirror-polished surface, a transparent conductive film, or a high doping concentration Si sheet with an ohmic electrode deposited on the bottom, and the metal sheet includes a Cu sheet, an Al sheet, or an Ag sheet.
4. The GaN-based vertical cavity surface emitting laser of claim 2, comprising a conductive substrate, a second DBR structure, a second semiconductor layer, an active layer, a first semiconductor layer, and a first DBR structure disposed in that order along a prescribed direction, the first semiconductor layer being electrically coupled to the first electrode.
5. The GaN-based vertical cavity surface emitting laser according to claim 1, comprising a substrate, a first DBR structure, a first semiconductor layer, an active layer, a second semiconductor layer, and a second DBR structure disposed in that order along a prescribed direction, the first semiconductor layer, the second DBR structure being electrically coupled to a first electrode, a second electrode, respectively.
6. The GaN-based vertical cavity surface emitting laser according to claim 4 or 5, wherein: the first semiconductor layer forms an ohmic contact with the first electrode.
7. The GaN-based vertical cavity surface emitting laser according to claim 5, wherein: the implantation area of the second electrode is the whole area of an end face of the second DBR structure away from the second semiconductor layer.
8. The GaN-based vertical cavity surface emitting laser according to claim 1, wherein: the dielectric DBR comprises an oxide DBR or a nitride DBR, the material of the oxide DBR comprises any one or a combination of a plurality of SiO 2、HfO2、TiO2 and ZnO, and the material of the nitride DBR comprises any one or a combination of a plurality of AlN, gaN, inGaN, alGaN.
9. The GaN-based vertical cavity surface emitting laser according to claim 1, wherein: the dielectric DBR structure used for forming the conductive DBR structure is selected from oxide DBR, and the material of the oxide DBR comprises any one or a combination of a plurality of SiO2, hfO2, tiO2 and ZnO.
10. The GaN-based vertical cavity surface emitting laser according to any one of claims 1 to 5, wherein: the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer.
11. A method of fabricating a GaN-based vertical cavity surface emitting laser having a conductive DBR structure, comprising:
sequentially growing a first semiconductor layer, an active layer and a second semiconductor layer;
Growing a dielectric DBR structure on the second semiconductor layer, forming a conductive channel in the dielectric DBR structure through an electrical breakdown process to obtain a conductive second DBR structure, and bonding the second DBR structure with a conductive substrate, wherein the conductive substrate is at least used as a second electrode;
growing a first DBR structure on the first semiconductor layer, and disposing a first electrode on the first semiconductor layer;
wherein the first DBR structure and the dielectric DBR structure used for forming the second DBR structure are oxide DBR;
the conditions of the electrical breakdown process include: the electric field adopts positive and negative alternating electric fields, the amplitude is gradually increased from 5V to 50V, the increasing rate of the voltage amplitude is between 0.1V/s and 10V/s, and the frequency of positive and negative voltage application is between 1Hz and 100Hz.
12. The manufacturing method according to claim 11, characterized in that it comprises: and then applying breakdown voltage between more than one metal point and the second semiconductor layer to form a conductive channel in the dielectric DBR structure, thereby obtaining the second DBR structure.
13. The method of manufacturing according to claim 11 or 12, wherein: the oxide DBR material comprises any one or a combination of a plurality of SiO 2、HfO2、TiO2、 ZnO.
14. The method of manufacturing according to claim 12, wherein: the metal points are a plurality of and are orderly arranged on the dielectric DBR structure.
15. A method of fabricating a GaN-based vertical cavity surface emitting laser having a conductive DBR structure, comprising:
sequentially growing a nitride DBR structure serving as a first DBR structure, a first semiconductor layer, an active layer, a second semiconductor layer and a dielectric DBR structure for forming a second DBR structure;
forming a conductive channel in the dielectric DBR structure through an electrical breakdown process to obtain a conductive second DBR structure; a first electrode and a second electrode are respectively arranged on the first semiconductor layer and the second DBR structure;
wherein the conditions of the electrical breakdown process include: the electric field adopts positive and negative alternating electric fields, the amplitude is gradually increased from 5V to 50V, the increasing rate of the voltage amplitude is between 0.1V/s and 10V/s, and the frequency of positive and negative voltage application is between 1Hz and 100Hz.
16. The method of claim 15, wherein the electrical breakdown process comprises: and depositing more than one metal point on the dielectric DBR structure, and then applying breakdown voltage between the more than one metal point and the second semiconductor layer to form a conductive channel in the dielectric DBR structure, thereby obtaining the conductive DBR structure used as the second DBR structure.
17. The method of manufacturing according to claim 16, wherein: the metal dots are a plurality of and are orderly arranged on the second DBR structure.
18. The method of manufacturing according to claim 15 or 16, wherein: the dielectric DBR structure comprises an oxide DBR, and the material of the oxide DBR comprises any one or a combination of a plurality of SiO 2、HfO2、TiO2、 ZnO.
19. The method of manufacturing according to claim 15, wherein: the nitride DBR material may comprise any one or a combination of a plurality of AlN, gaN, inGaN, alGaN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011078799.8A CN114336282B (en) | 2020-10-10 | 2020-10-10 | GaN-based vertical cavity surface emitting laser with conductive DBR structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011078799.8A CN114336282B (en) | 2020-10-10 | 2020-10-10 | GaN-based vertical cavity surface emitting laser with conductive DBR structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114336282A CN114336282A (en) | 2022-04-12 |
| CN114336282B true CN114336282B (en) | 2024-08-06 |
Family
ID=81031774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011078799.8A Active CN114336282B (en) | 2020-10-10 | 2020-10-10 | GaN-based vertical cavity surface emitting laser with conductive DBR structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114336282B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107645123A (en) * | 2017-09-27 | 2018-01-30 | 华东师范大学 | A kind of active area structure design of multi-wavelength GaN base vertical cavity surface emitting laser |
| CN109873297A (en) * | 2019-04-26 | 2019-06-11 | 山东大学 | A kind of GaN base vertical cavity surface emitting laser and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11095096B2 (en) * | 2014-04-16 | 2021-08-17 | Yale University | Method for a GaN vertical microcavity surface emitting laser (VCSEL) |
| CN106848838B (en) * | 2017-04-06 | 2019-11-29 | 中国科学院半导体研究所 | GaN base VCSEL chip and preparation method based on porous DBR |
| CN106848016B (en) * | 2017-04-06 | 2019-12-03 | 中国科学院半导体研究所 | The preparation method of the porous DBR of GaN base |
-
2020
- 2020-10-10 CN CN202011078799.8A patent/CN114336282B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107645123A (en) * | 2017-09-27 | 2018-01-30 | 华东师范大学 | A kind of active area structure design of multi-wavelength GaN base vertical cavity surface emitting laser |
| CN109873297A (en) * | 2019-04-26 | 2019-06-11 | 山东大学 | A kind of GaN base vertical cavity surface emitting laser and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Fabrication of HfO2/TiO2-based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes;S. H. Oh et al.;Journal of Alloys and Compounds;第773卷;490-495 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114336282A (en) | 2022-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11258231B2 (en) | GaN-based VCSEL chip based on porous DBR and manufacturing method of the same | |
| JP4860024B2 (en) | InXAlYGaZN light emitting device and manufacturing method thereof | |
| JP6722221B2 (en) | Light emitting diode | |
| JP4928866B2 (en) | Nitride semiconductor vertical cavity surface emitting laser | |
| EP2675024B1 (en) | Electron beam pumped vertical cavity surface emitting laser | |
| JP6152848B2 (en) | Semiconductor light emitting device | |
| CN109873297B (en) | GaN-based vertical cavity surface emitting laser and preparation method thereof | |
| JP2010537408A (en) | Micropixel ultraviolet light emitting diode | |
| KR100384598B1 (en) | Nitride compound semiconductor vertical-cavity surface-emitting laser | |
| WO2018022849A1 (en) | Iii-p light emitting device with a superlattice | |
| CN113471814B (en) | Nitride semiconductor vertical cavity surface emitting laser, and manufacturing method and application thereof | |
| JP4443094B2 (en) | Semiconductor light emitting device | |
| CN114336282B (en) | GaN-based vertical cavity surface emitting laser with conductive DBR structure and manufacturing method thereof | |
| CN210040877U (en) | Vertical cavity surface emitting laser with horizontal air column current injection aperture structure | |
| WO2018235413A1 (en) | Surface-emitting semiconductor laser and method for producing same | |
| KR101124470B1 (en) | Semiconductor light emitting device | |
| US20230109404A1 (en) | Semiconductor Light-Emitting Device And Preparation Method Thereof | |
| WO2022109990A1 (en) | Semiconductor light emitting device and manufacturing method therefor | |
| JP2010087172A (en) | Semiconductor light-emitting element and end-face emission type semiconductor laser element | |
| JP6921179B2 (en) | III-P light emitting device using superlattice | |
| CN116435428A (en) | III-nitride semiconductor photoelectric device structure and preparation method thereof | |
| JP4007737B2 (en) | Semiconductor element | |
| WO2016157739A1 (en) | Semiconductor light-emitting element | |
| CN116799617A (en) | VCSEL chip of porous DBR and preparation method thereof | |
| CN116314522A (en) | LED chip and method for manufacturing LED chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |