CN114334853A - Power module structure and drive circuit thereof - Google Patents
Power module structure and drive circuit thereof Download PDFInfo
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- CN114334853A CN114334853A CN202210249262.6A CN202210249262A CN114334853A CN 114334853 A CN114334853 A CN 114334853A CN 202210249262 A CN202210249262 A CN 202210249262A CN 114334853 A CN114334853 A CN 114334853A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a power module structure and a driving circuit thereof, comprising a packaging body and pins; the pins are arranged in a plurality and distributed on two sides of the packaging body; a circuit module is arranged in the packaging body, one end of each pin is arranged in the packaging body and is electrically connected with the circuit module, and the other end of each pin is positioned on the outer side of the packaging body; the circuit module comprises a first insulation structure, a triode transistor, a second insulation structure and a driving chip; the triode transistor is arranged on the upper surface of the first insulation structure, the second insulation structure is arranged on the upper surface of the triode transistor, and the driving chip is arranged on the upper surface of the second insulation structure; the pin at one side is electrically connected with the driving chip; the application aims at providing a power module structure and drive circuit thereof, encapsulates high pressure side drive circuit, low pressure side drive circuit and insulating heat radiation structure as whole, realizes the mutual isolation between high pressure side drive circuit and the low pressure side drive circuit, effectively realizes the miniaturized design of module.
Description
Technical Field
The invention relates to the field of intelligent power modules, in particular to a power module structure and a driving circuit thereof.
Background
The Intelligent Power Module, namely Intelligent Power Module, is a Power driving product combining Power electronics and integrated circuit technology, is applied to variable frequency motor servo driving, and is widely applied to variable frequency control of household appliances. The intelligent power module integrates a power switch device and a high-voltage driving circuit and is provided with fault detection circuits such as overvoltage, overcurrent and overheat.
The intelligent power module is internally provided with a high-voltage driving circuit and a low-voltage driving circuit, the driving circuit on the low-voltage side and the driving circuit on the high-voltage side are integrated into one chip, and when the high-voltage VH is larger than 1200V, the chip structure can not meet the isolation requirement between the high-voltage side and the low-voltage side.
Disclosure of Invention
The invention aims to provide a power module structure and a driving circuit thereof, wherein a high-voltage side driving circuit, a low-voltage side driving circuit and an insulating heat dissipation structure are packaged into a whole, so that mutual isolation between the high-voltage side driving circuit and the low-voltage side driving circuit is realized, and the miniaturization design of a module is effectively realized.
In order to achieve the purpose, the invention adopts the following technical scheme: a power module structure comprises a packaging body and a pin; the pins are arranged in a plurality and distributed on two sides of the packaging body; a circuit module is arranged in the packaging body, one end of each pin is arranged in the packaging body and is electrically connected with the circuit module, and the other end of each pin is positioned on the outer side of the packaging body;
the circuit module comprises a first insulation structure, a triode transistor, a second insulation structure and a driving chip;
the triode transistor is arranged on the upper surface of the first insulating structure, the second insulating structure is arranged on the upper surface of the triode transistor, and the driving chip is arranged on the upper surface of the second insulating structure;
the pin on one side is electrically connected with the driving chip, the driving chip is electrically connected with the triode transistor, and the triode transistor is electrically connected with the pin on the other side.
Preferably, the first insulating structure includes an aluminum base layer disposed at the bottom of the package body and a first insulating layer disposed on an upper surface of the aluminum base layer, and the triode transistor is disposed on an upper surface of the first insulating layer.
Preferably, the solar cell further comprises a first heat dissipation layer made of a heat-conducting metal, and the first heat dissipation layer is arranged between the triode transistor and the upper surface of the first insulation layer.
Preferably, the second insulating structure includes a second heat dissipation layer and a second insulating layer, the second heat dissipation layer is disposed on the upper surface of the triode transistor, and the second insulating layer is disposed on the upper surface of the second heat dissipation layer; the driving chip is arranged on the upper surface of the second insulating layer.
Preferably, the display device further comprises a third heat dissipation layer, wherein the third heat dissipation layer is arranged between the driving chip and the upper surface of the second insulation layer.
A power driving circuit adopts the power module structure, and comprises an upper bridge driving chip, a lower bridge driving chip, an upper bridge triode group, a lower bridge triode group, an upper bridge diode group and a lower bridge diode group;
the input end of the upper bridge driving chip is used as the high-order input end of the packaging body, the output end of the upper bridge driving chip is electrically connected with the upper bridge triode group, the upper bridge triode group is electrically connected with the upper bridge diode group, and the output end of the upper bridge diode group is used as the high-order output end of the packaging body;
the input of lower bridge driver chip is regarded as the low level input of packaging body, lower bridge driver chip's output with lower bridge triode group electricity is connected, lower bridge triode group with lower bridge diode group electricity is connected, the output of lower bridge diode group is regarded as the earthing terminal of packaging body.
Preferably, the upper bridge triode transistor group comprises a U-phase upper bridge triode transistor Q1, a V-phase upper bridge triode transistor Q2 and a W-phase upper bridge triode transistor Q3; the upper bridge diode group comprises a diode D1, a diode D2 and a diode D3; the lower bridge triode group comprises a U-phase lower bridge triode Q4, a V-phase lower bridge triode Q5 and a W-phase lower bridge triode Q6; the lower bridge diode group comprises a diode D4, a diode D5 and a diode D6;
the base electrode of the U-phase upper bridge triode transistor Q1 is electrically connected with the upper bridge driving chip, the collector electrode of the U-phase upper bridge triode transistor Q1 is used as a connecting end P, the emitter electrode of the U-phase upper bridge triode transistor Q1 is electrically connected with the collector electrode of the U-phase lower bridge triode transistor Q4, and the positive electrode end and the negative electrode end of the diode D1 are respectively connected in parallel between the emitter electrode and the collector electrode of the U-phase upper bridge triode transistor Q1;
the base electrode of the V-phase upper bridge triode transistor Q2 is electrically connected with the upper bridge driving chip, the collector electrode of the V-phase upper bridge triode transistor Q2 is electrically connected with a connecting end P, the emitter electrode of the V-phase upper bridge triode transistor Q2 is electrically connected with the collector electrode of the V-phase lower bridge triode transistor Q5, and the positive electrode end and the negative electrode end of the diode D2 are respectively connected in parallel between the emitter electrode and the collector electrode of the V-phase upper bridge triode transistor Q2;
the base electrode of the W-phase upper bridge triode transistor Q3 is electrically connected with the upper bridge driving chip, the collector electrode of the W-phase upper bridge triode transistor Q3 is electrically connected with a connecting end P, the emitter electrode of the W-phase upper bridge triode transistor Q3 is electrically connected with the collector electrode of the W-phase lower bridge triode transistor Q6, and the positive electrode end and the negative electrode end of the diode D3 are respectively connected in parallel between the emitter electrode and the collector electrode of the W-phase upper bridge triode transistor Q3;
the base electrode of the U-phase lower bridge three-pole transistor Q4 is electrically connected with the lower bridge driving chip, and the emitter electrode of the U-phase lower bridge three-pole transistor Q4 is used as a U-phase zero-line end; the positive end and the negative end of the diode D4 are respectively connected in parallel between the emitter and the collector of the U-phase lower bridge triode transistor Q4;
the base electrode of the V-phase lower bridge three-pole transistor Q5 is electrically connected with the lower bridge driving chip, and the emitter electrode of the V-phase lower bridge three-pole transistor Q5 is used as a V-phase zero-line end; the positive end and the negative end of the diode D5 are respectively connected in parallel between the emitter and the collector of the V-phase lower bridge triode transistor Q5;
the base electrode of the W-phase lower bridge three-pole transistor Q6 is electrically connected with the lower bridge driving chip, and the emitter electrode of the W-phase lower bridge three-pole transistor Q6 is used as a W-phase zero-line end; the positive terminal and the negative terminal of the diode D6 are respectively connected in parallel between the emitter and the collector of the W-phase downbridge triode transistor Q6.
Preferably, the upper bridge driving chip further includes a resistor R1, a diode D7, a diode D8 and a diode D9, one end of the resistor R1 is used as a power input end of the upper bridge driving chip, the other end of the resistor R1 is electrically connected to the positive terminal of the diode D7, the positive terminal of the diode D8 and the positive terminal of the diode D9, the negative terminal of the diode D7 is used as a connection terminal VB1, the negative terminal of the diode D8 is used as a connection terminal VB2, and the negative terminal of the diode D9 is used as a connection terminal VB 3.
The technical scheme of the invention has the beneficial effects that: through encapsulating driver chip and tripolar transistor in the packaging body to through first insulation system and the cooperation of second insulation system realize between driver chip and the encapsulation, between tripolar transistor and the encapsulation, form intelligent power modular structure after the whole encapsulation, can realize the insulating isolation of encapsulation, submit the inside interference killing feature of intelligent power modular structure effectively, be applicable to high-pressure drive product. Compared with the traditional structure, the position of the driving IC chip is not required to be reserved on the plane structure, the whole packaging structure is more miniaturized, and the installation space and the production cost can be saved.
Drawings
FIG. 1 is a schematic diagram of a package structure according to an embodiment of the invention;
FIG. 2 is a schematic view of a partial cross-sectional structure of one embodiment of the present invention;
FIG. 3 is a schematic view of the package body of the present invention with the package body removed;
FIG. 4 is a schematic circuit diagram of one embodiment of the present invention.
Wherein: the package includes a package 1, a lead 2, a circuit module 3, a first insulating structure 31, an aluminum base layer 311, a first insulating layer 312, a first heat dissipation layer 313, a triode transistor 32, a second insulating structure 33, a second heat dissipation layer 331, a second insulating layer 332, a third heat dissipation layer 333, a driver chip 34, an upper bridge driver chip 4, a lower bridge driver chip 5, an upper bridge triode group 6, a lower bridge triode group 7, an upper bridge diode group 8, and a lower bridge diode group 9.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1 to 4, a power module structure includes a package 1 and a pin 2; the pins 2 are arranged in a plurality and distributed on two sides of the packaging body 1; a circuit module 3 is arranged in the packaging body 1, one end of the pin 2 is arranged in the packaging body 1 and is electrically connected with the circuit module 3, and the other end of the pin 2 is positioned at the outer side of the packaging body 1;
the circuit module 3 comprises a first insulating structure 31, a triode transistor 32, a second insulating structure 33 and a driving chip 34;
the triode transistor 32 is arranged on the upper surface of the first insulating structure 31, the second insulating structure 33 is arranged on the upper surface of the triode transistor 32, and the driving chip 34 is arranged on the upper surface of the second insulating structure 33;
the pin 2 on one side is electrically connected to the driving chip 34, the driving chip 34 is electrically connected to the triode transistor 32, and the triode transistor 32 is electrically connected to the pin 2 on the other side.
The lead 2 located at one side refers to a lead located at one side in the length direction of the package 1, and the lead located at the other side refers to a lead located at the other side in the length direction of the package 1. This application is through encapsulating driver chip 34 and tripolar transistor 32 in packaging body 1 to realize through first insulation structure 31 and the cooperation of second insulation structure 33 between driver chip 34 and the encapsulation, between tripolar transistor 32 and the encapsulation, insulation between driver chip 34 and the tripolar transistor 32, form intelligent power modular structure after whole encapsulation, can realize the insulating isolation of encapsulation, submit the inside interference killing feature of intelligent power modular structure effectively, be applicable to high-pressure drive product. Compared with the traditional structure, the position of the driving IC chip is not required to be reserved on the plane structure, the whole packaging structure is more miniaturized, and the installation space and the production cost can be saved.
Preferably, the first insulating structure 31 includes an aluminum base layer 311 and a first insulating layer 312, the aluminum base layer 311 is disposed at the bottom of the package body 1, the first insulating layer 312 is disposed on the upper surface of the aluminum base layer 311, and the triode transistor 32 is disposed on the upper surface of the first insulating layer 312.
Meanwhile, the heat dissipation structure further comprises a first heat dissipation layer 313, the first heat dissipation layer 313 is made of a heat conductive metal, and the first heat dissipation layer 313 is arranged between the triode transistor 32 and the upper surface of the first insulation layer 312.
The aluminum base layer 311, the first insulating layer 312 and the first heat dissipation layer 313 form the first insulating structure 31, the first insulating layer 312 plays an insulating role to prevent the package from being electrified, and the first heat dissipation layer 313 is preferably made of copper material to play a heat dissipation role for the triode transistor 32.
The package body 1 may be molded using a thermosetting resin by a transfer mold method, or may be molded using a thermoplastic resin by an injection mold method. The package can completely seal all elements except the pins 2 on the surface of the circuit board having the circuit wiring, and generally, for the smart power module requiring high compactness, the surface of the circuit board not having the circuit wiring is also sealed, and for the smart power module requiring high heat dissipation, only the surface of the circuit board having the elements can be sealed by the package, and the other surface is exposed.
Specifically, the second insulating structure 33 includes a second heat dissipation layer 331 and a second insulating layer 332, the second heat dissipation layer 331 is disposed on an upper surface of the triode transistor 32, and the second insulating layer 332 is disposed on an upper surface of the second heat dissipation layer 331; the driving chip 34 is disposed on the upper surface of the second insulating layer 332.
Preferably, a third heat dissipation layer 333 is further included, and the third heat dissipation layer 333 is disposed between the driving chip 34 and the upper surface of the second insulation layer 332.
The second heat dissipation layer 331 is connected to the triode transistor 32, and the third heat dissipation layer 333 is connected to the driver chip 34, so that when the triode transistor 32 and the driver chip 34 generate heat during operation, the corresponding heat dissipation layers can achieve a good heat dissipation effect, and prevent the package body from being over-heated. The provision of the second insulating layer 332 prevents interference between the triode transistor 32 and the drive chip 34. This application owing to separate triode transistor 32 and driver chip 34 through second insulating layer 332, can be close to triode transistor 32 and driver chip 34 in the design, under the circumstances of influence each other, has saved the volume of encapsulation.
A power driving circuit adopts the power module structure, and comprises an upper bridge driving chip 4, a lower bridge driving chip 5, an upper bridge triode group 6, a lower bridge triode group 7, an upper bridge diode group 8 and a lower bridge diode group 9;
the input end of the upper bridge driving chip 4 is used as the high-order input end of the package 1, the output end of the upper bridge driving chip 4 is electrically connected with the upper bridge triode group 6, the upper bridge triode group 6 is electrically connected with the upper bridge diode group 8, and the output end of the upper bridge diode group 8 is used as the high-order output end of the package 1;
the input end of the lower bridge driving chip 5 is used as the low-order input end of the packaging body 1, the output end of the lower bridge driving chip 5 is electrically connected with the lower bridge triode group 7, the lower bridge triode group 7 is electrically connected with the lower bridge diode group 9, and the output end of the lower bridge diode group 9 is used as the grounding end of the packaging body 1.
The upper bridge driving chip 4 is used for driving the upper bridge triode group 6 to be switched on and off, and the lower bridge driving chip 5 is used for driving the lower bridge triode group 7 to be switched on and off, so that an enable EN circuit, an overcurrent detection circuit and a fault output circuit are integrated. According to the three-pole transistor driving circuit, the upper bridge arm and the lower bridge arm are provided with two independent driving chips which are fixed on the corresponding three-pole transistors, so that the driving chips are electrically connected with the three-pole transistors. Through last bridge circuit and lower bridge circuit with high-pressure side and low pressure side drive circuit divide two parts, and stack on power device, effectively solve high-low pressure isolation problem, shorten the signal of telecommunication transmission distance of driving to the power tube, and effectively realize the miniaturized design demand of module.
Specifically, the upper bridge triode group 6 includes a U-phase upper bridge triode transistor Q1, a V-phase upper bridge triode transistor Q2, and a W-phase upper bridge triode transistor Q3; the upper bridge diode group 8 includes a diode D1, a diode D2, and a diode D3; the lower bridge triode group 7 comprises a U-phase lower bridge triode Q4, a V-phase lower bridge triode Q5 and a W-phase lower bridge triode Q6; the lower bridge diode group 9 includes a diode D4, a diode D5, and a diode D6;
the base electrode of the U-phase upper bridge triode transistor Q1 is electrically connected with the upper bridge driving chip 4, the collector electrode of the U-phase upper bridge triode transistor Q1 is used as a connecting end P, the emitter electrode of the U-phase upper bridge triode transistor Q1 is electrically connected with the collector electrode of the U-phase lower bridge triode transistor Q4, and the anode end and the cathode end of the diode D1 are respectively connected in parallel between the emitter electrode and the collector electrode of the U-phase upper bridge triode transistor Q1;
the base electrode of the V-phase upper bridge triode transistor Q2 is electrically connected with the upper bridge driving chip 4, the collector electrode of the V-phase upper bridge triode transistor Q2 is electrically connected with a connection end P, the emitter electrode of the V-phase upper bridge triode transistor Q2 is electrically connected with the collector electrode of the V-phase lower bridge triode transistor Q5, and the positive electrode end and the negative electrode end of the diode D2 are respectively connected in parallel between the emitter electrode and the collector electrode of the V-phase upper bridge triode transistor Q2;
the base of the W-phase upper bridge triode transistor Q3 is electrically connected with the upper bridge driving chip 4, the collector of the W-phase upper bridge triode transistor Q3 is electrically connected with the connection terminal P, the emitter of the W-phase upper bridge triode transistor Q3 is electrically connected with the collector of the W-phase lower bridge triode transistor Q6, and the positive terminal and the negative terminal of the diode D3 are respectively connected in parallel between the emitter and the collector of the W-phase upper bridge triode transistor Q3;
the base electrode of the U-phase lower bridge three-pole transistor Q4 is electrically connected with the lower bridge driving chip 5, and the emitter electrode of the U-phase lower bridge three-pole transistor Q4 is used as a U-phase zero-line end; the positive end and the negative end of the diode D4 are respectively connected in parallel between the emitter and the collector of the U-phase lower bridge triode transistor Q4;
the base electrode of the V-phase lower bridge three-pole transistor Q5 is electrically connected with the lower bridge driving chip 5, and the emitter electrode of the V-phase lower bridge three-pole transistor Q5 is used as a V-phase zero-line end; the positive end and the negative end of the diode D5 are respectively connected in parallel between the emitter and the collector of the V-phase lower bridge triode transistor Q5;
the base electrode of the W-phase lower bridge three-pole transistor Q6 is electrically connected with the lower bridge driving chip 5, and the emitter electrode of the W-phase lower bridge three-pole transistor Q6 is used as a W-phase zero-line end; the positive terminal and the negative terminal of the diode D6 are respectively connected in parallel between the emitter and the collector of the W-phase downbridge triode transistor Q6.
Preferably, the upper bridge driving chip 4 further includes a resistor R1, a diode D7, a diode D8 and a diode D9, one end of the resistor R1 is used as a power input end of the upper bridge driving chip 4, the other end of the resistor R1 is electrically connected to the positive terminal of the diode D7, the positive terminal of the diode D8 and the positive terminal of the diode D9, the negative terminal of the diode D7 is used as a connection terminal VB1, the negative terminal of the diode D8 is used as a connection terminal VB2, and the negative terminal of the diode D9 is used as a connection terminal VB 3.
The resistor R1, the diode D7, the diode D8 and the diode D9 form a bootstrap circuit, and the diode D7, the diode D8 and the diode D9 are bootstrap diodes and play a role in increasing voltage.
In the description herein, references to the description of the terms "embodiment," "example," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The technical principle of the present invention is described above in connection with specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without inventive effort, which would fall within the scope of the present invention.
Claims (8)
1. A power module structure is characterized by comprising a packaging body and a pin; the pins are arranged in a plurality and distributed on two sides of the packaging body; a circuit module is arranged in the packaging body, one end of each pin is arranged in the packaging body and is electrically connected with the circuit module, and the other end of each pin is positioned on the outer side of the packaging body;
the circuit module comprises a first insulation structure, a triode transistor, a second insulation structure and a driving chip;
the triode transistor is arranged on the upper surface of the first insulating structure, the second insulating structure is arranged on the upper surface of the triode transistor, and the driving chip is arranged on the upper surface of the second insulating structure;
the pin on one side is electrically connected with the driving chip, the driving chip is electrically connected with the triode transistor, and the triode transistor is electrically connected with the pin on the other side.
2. A power module structure according to claim 1, wherein the first insulating structure comprises an aluminum base layer disposed at the bottom of the package body and a first insulating layer disposed on the upper surface of the aluminum base layer, and the triode transistor is disposed on the upper surface of the first insulating layer.
3. The power module structure of claim 2, further comprising a first heat dissipation layer, wherein the first heat dissipation layer is made of a heat conductive metal material, and the first heat dissipation layer is disposed between the triode transistor and the upper surface of the first insulating layer.
4. A power module structure according to claim 1, wherein the second insulating structure includes a second heat dissipation layer and a second insulating layer, the second heat dissipation layer being disposed on an upper surface of the triode transistor, the second insulating layer being disposed on an upper surface of the second heat dissipation layer; the driving chip is arranged on the upper surface of the second insulating layer.
5. The power module structure of claim 4, further comprising a third heat dissipation layer disposed between the driver chip and the upper surface of the second insulating layer.
6. A power driving circuit, characterized in that, the power module structure of any one of the above claims 1 to 5 is adopted, and the power driving circuit comprises an upper bridge driving chip, a lower bridge driving chip, an upper bridge triode group, a lower bridge triode group, an upper bridge diode group and a lower bridge diode group;
the input end of the upper bridge driving chip is used as the high-order input end of the packaging body, the output end of the upper bridge driving chip is electrically connected with the upper bridge triode group, the upper bridge triode group is electrically connected with the upper bridge diode group, and the output end of the upper bridge diode group is used as the high-order output end of the packaging body;
the input of lower bridge driver chip is regarded as the low level input of packaging body, lower bridge driver chip's output with lower bridge triode group electricity is connected, lower bridge triode group with lower bridge diode group electricity is connected, the output of lower bridge diode group is regarded as the earthing terminal of packaging body.
7. The power driving circuit according to claim 6, wherein the upper bridge triode group comprises a U-phase upper bridge triode transistor Q1, a V-phase upper bridge triode transistor Q2 and a W-phase upper bridge triode transistor Q3; the upper bridge diode group comprises a diode D1, a diode D2 and a diode D3; the lower bridge triode group comprises a U-phase lower bridge triode Q4, a V-phase lower bridge triode Q5 and a W-phase lower bridge triode Q6; the lower bridge diode group comprises a diode D4, a diode D5 and a diode D6;
the base electrode of the U-phase upper bridge triode transistor Q1 is electrically connected with the upper bridge driving chip, the collector electrode of the U-phase upper bridge triode transistor Q1 is used as a connecting end P, the emitter electrode of the U-phase upper bridge triode transistor Q1 is electrically connected with the collector electrode of the U-phase lower bridge triode transistor Q4, and the positive electrode end and the negative electrode end of the diode D1 are respectively connected in parallel between the emitter electrode and the collector electrode of the U-phase upper bridge triode transistor Q1;
the base electrode of the V-phase upper bridge triode transistor Q2 is electrically connected with the upper bridge driving chip, the collector electrode of the V-phase upper bridge triode transistor Q2 is electrically connected with a connecting end P, the emitter electrode of the V-phase upper bridge triode transistor Q2 is electrically connected with the collector electrode of the V-phase lower bridge triode transistor Q5, and the positive electrode end and the negative electrode end of the diode D2 are respectively connected in parallel between the emitter electrode and the collector electrode of the V-phase upper bridge triode transistor Q2;
the base electrode of the W-phase upper bridge triode transistor Q3 is electrically connected with the upper bridge driving chip, the collector electrode of the W-phase upper bridge triode transistor Q3 is electrically connected with a connecting end P, the emitter electrode of the W-phase upper bridge triode transistor Q3 is electrically connected with the collector electrode of the W-phase lower bridge triode transistor Q6, and the positive electrode end and the negative electrode end of the diode D3 are respectively connected in parallel between the emitter electrode and the collector electrode of the W-phase upper bridge triode transistor Q3;
the base electrode of the U-phase lower bridge three-pole transistor Q4 is electrically connected with the lower bridge driving chip, and the emitter electrode of the U-phase lower bridge three-pole transistor Q4 is used as a U-phase zero-line end; the positive end and the negative end of the diode D4 are respectively connected in parallel between the emitter and the collector of the U-phase lower bridge triode transistor Q4;
the base electrode of the V-phase lower bridge three-pole transistor Q5 is electrically connected with the lower bridge driving chip, and the emitter electrode of the V-phase lower bridge three-pole transistor Q5 is used as a V-phase zero-line end; the positive end and the negative end of the diode D5 are respectively connected in parallel between the emitter and the collector of the V-phase lower bridge triode transistor Q5;
the base electrode of the W-phase lower bridge three-pole transistor Q6 is electrically connected with the lower bridge driving chip, and the emitter electrode of the W-phase lower bridge three-pole transistor Q6 is used as a W-phase zero-line end; the positive terminal and the negative terminal of the diode D6 are respectively connected in parallel between the emitter and the collector of the W-phase downbridge triode transistor Q6.
8. The power driving circuit as claimed in claim 6, wherein the upper bridge driving chip further comprises a resistor R1, a diode D7, a diode D8 and a diode D9, one end of the resistor R1 is used as a power input terminal of the upper bridge driving chip, the other end of the resistor R1 is electrically connected to the positive terminal of the diode D7, the positive terminal of the diode D8 and the positive terminal of the diode D9, the negative terminal of the diode D7 is used as a connection terminal VB1, the negative terminal of the diode D8 is used as a connection terminal VB2, and the negative terminal of the diode D9 is used as a connection terminal VB 3.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210249262.6A CN114334853B (en) | 2022-03-15 | 2022-03-15 | Power module structure and drive circuit thereof |
| PCT/CN2022/118603 WO2023173706A1 (en) | 2022-03-15 | 2022-09-14 | Power module structure and driving circuit thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210249262.6A CN114334853B (en) | 2022-03-15 | 2022-03-15 | Power module structure and drive circuit thereof |
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| CN114334853B CN114334853B (en) | 2022-06-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023173706A1 (en) * | 2022-03-15 | 2023-09-21 | 广东汇芯半导体有限公司 | Power module structure and driving circuit thereof |
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| CN114334853B (en) * | 2022-03-15 | 2022-06-10 | 广东汇芯半导体有限公司 | Power module structure and drive circuit thereof |
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| WO2023173706A1 (en) * | 2022-03-15 | 2023-09-21 | 广东汇芯半导体有限公司 | Power module structure and driving circuit thereof |
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| CN114334853B (en) | 2022-06-10 |
| WO2023173706A1 (en) | 2023-09-21 |
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Application publication date: 20220412 Assignee: Shenzhen Transmission Electronics Co.,Ltd. Assignor: Guangdong Huixin Semiconductor Co.,Ltd. Contract record no.: X2022980024728 Denomination of invention: A Power Module Structure and Its Driving Circuit Granted publication date: 20220610 License type: Common License Record date: 20221205 |
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Denomination of invention: A power module structure and its driving circuit Effective date of registration: 20230316 Granted publication date: 20220610 Pledgee: Agricultural Bank of China Limited Nanhai Danzao sub branch Pledgor: Guangdong Huixin Semiconductor Co.,Ltd. Registration number: Y2023980035071 |
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