CN114327651B - 芯片唤醒方法、系统、电子设备及可读存储介质 - Google Patents
芯片唤醒方法、系统、电子设备及可读存储介质 Download PDFInfo
- Publication number
- CN114327651B CN114327651B CN202111575220.3A CN202111575220A CN114327651B CN 114327651 B CN114327651 B CN 114327651B CN 202111575220 A CN202111575220 A CN 202111575220A CN 114327651 B CN114327651 B CN 114327651B
- Authority
- CN
- China
- Prior art keywords
- wake
- chip
- instruction
- power supply
- condition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 230000008859 change Effects 0.000 claims abstract description 41
- 230000002618 waking effect Effects 0.000 claims abstract description 5
- 230000035772 mutation Effects 0.000 claims description 25
- 238000001514 detection method Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000001960 triggered effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 14
- 230000006870 function Effects 0.000 description 8
- 238000004590 computer program Methods 0.000 description 5
- 230000002045 lasting effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111575220.3A CN114327651B (zh) | 2021-12-21 | 芯片唤醒方法、系统、电子设备及可读存储介质 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111575220.3A CN114327651B (zh) | 2021-12-21 | 芯片唤醒方法、系统、电子设备及可读存储介质 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114327651A CN114327651A (zh) | 2022-04-12 |
CN114327651B true CN114327651B (zh) | 2024-07-16 |
Family
ID=
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108446139A (zh) * | 2018-03-26 | 2018-08-24 | 京东方科技集团股份有限公司 | 一种fpga芯片的唤醒方法及装置 |
CN113763958A (zh) * | 2021-09-28 | 2021-12-07 | 海信视像科技股份有限公司 | 语音唤醒方法、装置、电子设备和存储介质 |
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108446139A (zh) * | 2018-03-26 | 2018-08-24 | 京东方科技集团股份有限公司 | 一种fpga芯片的唤醒方法及装置 |
CN113763958A (zh) * | 2021-09-28 | 2021-12-07 | 海信视像科技股份有限公司 | 语音唤醒方法、装置、电子设备和存储介质 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101495958B (zh) | 用于控制处理器低功率状态的系统和方法 | |
US9442557B2 (en) | Using a linear prediction to configure an idle state of an entity in a computing device | |
CN103118188A (zh) | 应用心跳周期调整方法及装置、终端 | |
US9292079B2 (en) | Accelerating the microprocessor core wakeup by predictively executing a subset of the power-up sequence | |
US7617407B2 (en) | Method and system for power consumption management, and corresponding computer program product | |
CN109831700B (zh) | 一种待机模式切换方法、装置、电子设备及存储介质 | |
CN110244832B (zh) | 半导体电路以及半导体系统 | |
CN102929381B (zh) | 电子系统及其电源管理方法 | |
US9935634B2 (en) | Communication between voltage domains | |
CN114327651B (zh) | 芯片唤醒方法、系统、电子设备及可读存储介质 | |
CN112559082B (zh) | 终端设备及nfc时钟控制方法、nfc模块、介质 | |
CN114121131A (zh) | 一种外置flash自适应方法、装置、设备及介质 | |
US9471136B2 (en) | Predictively turning off a charge pump supplying voltage for overdriving gates of the power switch header in a microprocessor with power gating | |
CN103915864A (zh) | 具有电源控制功能的电子装置 | |
US20110271123A1 (en) | Power control system of a baseboard management controller and method thereof | |
CN114327651A (zh) | 芯片唤醒方法、系统、电子设备及可读存储介质 | |
US20120185713A1 (en) | Server, storage medium, and method for controlling sleep and wakeup function of the server | |
CN1937075B (zh) | 数据传送操作完成检测电路和包含其的半导体存储器件 | |
CN105531681A (zh) | 存储装置、存储系统以及存储装置控制方法 | |
KR100677121B1 (ko) | 저전압 상태에서 배터리 상태 관리 방법 및 그 장치 | |
CN118033381B (zh) | 一种芯片负载检测方法及电路 | |
CN111404527B (zh) | 一种系统异常自动上下电的控制电路及方法 | |
TWI475371B (zh) | 電子裝置與其電源管理方法 | |
CN106227292B (zh) | 时钟控制设备、方法和触控显示设备 | |
US20210391704A1 (en) | Isolation circuit system and signal isolation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Country or region after: China Address after: Unit G4-202-059, Artificial Intelligence Industrial Park, No. 88 Jinjihu Avenue, Suzhou Industrial Park, Suzhou Area, China (Jiangsu) Pilot Free Trade Zone, Suzhou City, Jiangsu Province, 215124 Applicant after: Shencong Semiconductor (Jiangsu) Co.,Ltd. Applicant after: Shencong semiconductor (Zhuhai) Co.,Ltd. Address before: 200232 floor 1-3, No.24, Lane 315, Fenggu Road, Xuhui District, Shanghai Applicant before: Shanghai shencong Semiconductor Co.,Ltd. Country or region before: China Applicant before: Shencong semiconductor (Zhuhai) Co.,Ltd. |
|
GR01 | Patent grant |