CN114300589B - Full-color Micro-LED, preparation method thereof and display device - Google Patents
Full-color Micro-LED, preparation method thereof and display device Download PDFInfo
- Publication number
- CN114300589B CN114300589B CN202111652382.2A CN202111652382A CN114300589B CN 114300589 B CN114300589 B CN 114300589B CN 202111652382 A CN202111652382 A CN 202111652382A CN 114300589 B CN114300589 B CN 114300589B
- Authority
- CN
- China
- Prior art keywords
- layer
- quantum dot
- micro
- led
- color
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Optical Filters (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The application provides a full-color Micro-LED, a preparation method thereof and a display device, and relates to the technical field of LED display. By adding the tackifier layer in the preparation process of the quantum dot color conversion layer, the adhesion degree of the quantum dot is improved, and meanwhile, the connection strength of the quantum dot color conversion layer and the single-color Micro-LED array is improved. The full-color Micro-LED provided by the application is formed by reversely adhering the quantum dot color conversion layer to the upper part of the single-color Micro-LED array, and the quantum dot color conversion layer and the single-color Micro-LED array device are respectively manufactured, so that the process is simple.
Description
Technical Field
The application relates to the technical field of LED display, in particular to a full-color Micro-LED, a preparation method thereof and a display device.
Background
Micro-LED display is praised as the next generation display technology behind LEDs and OLEDs, micro-LEDs are simpler to realize single color, encapsulation and driving IC lamination can be realized through a flip-chip structure, but the realization of full color is relatively complex, the traditional RGB three-color array is required to be subjected to multiple transfer of red, blue and green three-color crystal grains, hundreds of thousands of LED crystal grains are embedded, and the requirements on LED crystal grain light efficiency, wavelength consistency and yield are higher.
Quantum dots, which may also be referred to as nanocrystals, are nanoparticles composed of group II-VI or group III-V elements. The particle size of the quantum dot is generally between 1 and 10nm, and the quantum dot can be suitable for Micro-LEDs with Micro size. The quantum dot has the effects of electroluminescence and photoinduced light emission, can emit light after being stimulated, has high color purity and saturation, and has a wider color gamut. In addition, the quantum dot has simple structure, thin shape and crimping property, and is very suitable for Micro-LED application. However, how to combine quantum dots with Micro-LEDs to achieve Micro-LED colorization is still an urgent problem to be solved.
Disclosure of Invention
The application aims to provide a full-color Micro-LED and a preparation method thereof, which aim to solve the problem of combination of quantum dots and Micro-LEDs.
In order to achieve the above object, the present application provides a method for preparing a full-color Micro-LED, comprising:
providing a single-color Micro-LED array, wherein the single-color Micro-LED array comprises a plurality of Micro-LED chips, and a partition wall is arranged among the Micro-LED chips so that the Micro-LED chips are independent;
preparing a quantum dot color conversion layer, wherein the preparation process of the quantum dot color conversion layer comprises the following steps:
preparing an adhesion promoter layer on a transparent substrate;
preparing red quantum dots and green quantum dots which are regularly arranged on the tackifier layer to form a plurality of quantum dot repeating units, wherein each quantum dot repeating unit comprises a red quantum dot, a green quantum dot and a blank point, and the quantum dot color conversion layer is obtained;
and reversely bonding the quantum dot color conversion layer on the single-color Micro-LED array, so that the red quantum dots, the green quantum dots and the blank spots in each quantum dot repeating unit are respectively arranged towards the Micro-LED chip correspondingly.
Preferably, the preparation of the adhesion promoter layer on the transparent substrate further comprises:
plating a color filter film on the transparent substrate;
and carrying out partition etching on the color filter film to form a color filter film with regular arrangement, so that the red quantum dots and the green quantum dots are prepared on the color filter film with regular arrangement.
Preferably, the preparing an adhesion promoter layer on a transparent substrate includes:
spin-coating a tackifier on the surface of the transparent substrate at a rotating speed of 800-1200 r/min for 20-40 s to obtain a transparent substrate coated with the tackifier;
and placing the transparent substrate coated with the tackifier in a vacuum oven for heating and curing to obtain the tackifier layer.
Preferably, the step of placing the transparent substrate coated with the tackifier in a vacuum oven for heating and curing to obtain the tackifier layer comprises the following steps:
firstly, placing the transparent substrate coated with the tackifier in a vacuum oven for 5-20 min;
heating the vacuum oven to 100-140 ℃, and heating for 1-3 h to solidify the tackifier to obtain the tackifier layer.
Preferably, the preparing the regularly arranged red quantum dots and green quantum dots on the tackifier layer includes:
using an inkjet printing device to press different quantum dot solutions onto the tackifier layer at a set speed through a spray head to obtain the regularly arranged red quantum dots and green quantum dots;
the inkjet printing apparatus contains a head alignment system and a quantum dot solution loading system.
Preferably, after the different quantum dot solutions are pressed onto the adhesion promoter layer at a set speed by a spray head using an inkjet printing apparatus, the method further comprises:
and drying or vacuumizing at low temperature the printed quantum dot solution to evaporate benign solvent in the quantum dot solution to obtain pixel-level red quantum dots and green quantum dots.
Preferably, the transparent substrate is glass, an acrylic plate or quartz.
Preferably, the preparation method of the single-color Micro-LED array comprises the following steps:
etching the LED epitaxial wafer to form a plurality of table tops exposing part of the first semiconductor layer to obtain a P-type semiconductor table top array;
depositing a current diffusion layer on the mesa;
depositing a metal layer on the current diffusion layer and the first semiconductor layer to form an electrode structure;
depositing a passivation layer on the metal layer, and etching the passivation layer to etch an electrode contact hole;
depositing a contact pad at the electrode contact hole to form an array comprising a plurality of Micro-LED chips;
and arranging a partition wall among the Micro-LED chips to obtain the single-color Micro-LED array.
Preferably, the surface of the partition wall to which the tackifier layer is adhered is a rough surface.
Preferably, the partition wall is black photoresist, and the preparation method of the rough surface comprises the following steps:
preparing a coarsened mask plate corresponding to the position of the partition wall;
exposing the partition wall through the coarsened mask plate part;
and cleaning the exposed black photoresist to form the isolation wall with the rough surface.
The application also provides a full-color Micro-LED, which is prepared by the preparation method of the full-color Micro-LED.
The application also provides a display device comprising the full-color Micro-LED.
Compared with the prior art, the application has the beneficial effects that:
the preparation of the quantum dot color conversion layer of the full-color Micro-LED comprises the steps of preparing a tackifier layer on a transparent substrate; red quantum dots and green quantum dots which are regularly arranged are prepared on the tackifier layer to form a plurality of quantum dot repeating units, wherein each quantum dot repeating unit comprises a red quantum dot, a green quantum dot and a blank dot. By adding the tackifier layer in the preparation process of the quantum dot color conversion layer, the adhesion degree of the quantum dot is improved, and meanwhile, the connection strength of the quantum dot color conversion layer and the single-color Micro-LED array is improved.
The full-color Micro-LED provided by the application is formed by reversely adhering the quantum dot color conversion layer to the upper part of the single-color Micro-LED array, and the quantum dot color conversion layer and the single-color Micro-LED array device are respectively manufactured, so that the process is simple.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope of the present application.
FIG. 1 is a schematic flow chart of a preparation method of a quantum dot color conversion layer;
FIG. 2 is a schematic diagram of a preparation process of a preparation method of a quantum dot color conversion layer according to the present application;
FIG. 3 is a schematic flow chart of a method for preparing a full-color Micro-LED according to the application;
FIG. 4 is a schematic diagram of a full-color Micro-LED according to the present application;
fig. 5 is an enlarged schematic view at a in fig. 4.
The reference numerals are:
10-a quantum dot color conversion layer; 1-a transparent substrate; 2-a tackifier layer; 3-quantum dot repeat units; 3 a-red quantum dots; 3 b-green quantum dots; 3 c-blank spots; 4-color filter film; 20-single color Micro-LED array; 22-Micro-LED chip; 24-partition walls; 25-roughened surface; 100-full color Micro-LED.
Detailed Description
The term as used herein:
"prepared from … …" is synonymous with "comprising". The terms "comprising," "including," "having," "containing," or any other variation thereof, as used herein, are intended to cover a non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, step, method, article, or apparatus.
The conjunction "consisting of … …" excludes any unspecified element, step or component. If used in a claim, such phrase will cause the claim to be closed, such that it does not include materials other than those described, except for conventional impurities associated therewith. When the phrase "consisting of … …" appears in a clause of the claim body, rather than immediately following the subject, it is limited to only the elements described in that clause; other elements are not excluded from the stated claims as a whole.
When an equivalent, concentration, or other value or parameter is expressed as a range, preferred range, or a range bounded by a list of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether ranges are separately disclosed. For example, when ranges of "1 to 5" are disclosed, the described ranges should be construed to include ranges of "1 to 4", "1 to 3", "1 to 2 and 4 to 5", "1 to 3 and 5", and the like. When a numerical range is described herein, unless otherwise indicated, the range is intended to include its endpoints and all integers and fractions within the range.
In these examples, the parts and percentages are by mass unless otherwise indicated.
The application provides a preparation method of a quantum dot color conversion layer, referring to fig. 1 and 2, comprising the following steps:
the first step: an adhesion promoter layer 2 is prepared on a transparent substrate 1.
Specifically, referring to fig. 2, the transparent substrate 1 may be a hard transparent material such as glass, acryl plate or quartz. The transparent substrate 1 plays a role of supporting, and quantum dots of quantum dots are formed by curing on the surface of the transparent substrate 1.
The adhesion promoter layer 2 has adhesion, and the adhesion promoter layer 2 can be prepared on the transparent substrate 1 in a coating manner, for example, and the adhesion of the quantum dots can be improved and the stability of the quantum dots can be improved through the adhesion of the adhesion promoter layer 2.
Specifically, the adhesion promoter layer 2 may be, for example, polydimethylsiloxane (PDMS). And spin-coating PDMS glue on the surface of the transparent substrate 1, and keeping the rotating speed of a glue homogenizing machine at 800-1200 r/min and homogenizing the glue for 20-40 s during spin-coating. After spin coating is finished, the transparent substrate is placed on the surface of a platform with good horizontal degree in a vacuum oven for 5-20 min, and bubbles in the PDMS glue escape from a material system; finally, heating in a vacuum oven for 1-3 h at 100-140 ℃ to realize the solidification of the PDMS glue, thus obtaining the tackifier layer 2.
Preferably, the spin coating is carried out by keeping the rotating speed of the spin coater at 1 000r/min and spin coating for 30s.
Preferably, after spin coating is completed, the transparent substrate is placed on the surface of a platform with good horizontal degree in a vacuum oven for 10min, and bubbles in the PDMS glue escape from a material system; finally, the PDMS glue is cured by heating in a vacuum oven at 120℃for 2 h.
And a second step of: red quantum dots 3a and green quantum dots 3b are prepared on the tackifier layer 2 in a regular arrangement to form a plurality of quantum dot repeating units 3, each quantum dot repeating unit 3 including a red quantum dot 3a, a green quantum dot 3b and a blank dot 3c.
Specifically, the arrangement of the red quantum dot 3a and the green quantum dot 3b is related to a light-emitting pixel unit on the chip, the light-emitting pixel unit includes three colors of red, blue and green, and the arrangement of the red quantum dot 3a and the green quantum dot 3b only needs to satisfy that each quantum dot repeating unit 3 includes a red quantum dot 3a, a green quantum dot 3b and a blank dot 3c. The blank dot 3c refers to a position on the tackifier layer 2 where the red quantum dot 3a and the green quantum dot 3b are not prepared.
Specifically, referring to fig. 2, the arrangement manner of the red quantum dots 3a, the green quantum dots 3b and the blank dots 3c in the quantum dot repeating unit 3 may be that the red quantum dots 3a and the green quantum dots 3b are arranged at intervals through the blank dots 3c, or that the red quantum dots 3a and the green quantum dots 3b are arranged adjacently.
Specifically, the quantum dots have photoluminescence characteristics, the red quantum dots 3a release red fluorescence under the excitation of blue light, and the green quantum dots 3b release green fluorescence under the excitation of blue light. Referring to fig. 4, since the light emitted by the single-color Micro-LED array 20 is blue light, after the quantum dot color conversion layer 10 is inversely combined to the single-color Micro-LED array 20, the Micro-LED chip 22 at the position corresponding to the red quantum dot, the Micro-LED chip 22 at the position corresponding to the green quantum dot, and the Micro-LED chip 22 at the position corresponding to the blank point form a light emitting pixel unit.
In a preferred embodiment, the red quantum dots 3a and the green quantum dots 3b are prepared on the tackifier layer 2 in a regular arrangement, including: and pressing different quantum dot solutions onto the tackifier layer 2 at a set speed by using an inkjet printing device through a spray head to obtain the regularly arranged red quantum dots 3a and green quantum dots 3b. The ink jet printing equipment comprises a spray head alignment system and a quantum dot solution loading system.
The quantum dot is prepared by the ink-jet printing method, the precision is high, the resolution is high, the material utilization rate is high, and the printing of individual pixel dots can be formed.
The quantum dot solution can be a hydrophobic quantum dot material solution dissolved in an organic solvent, and further, in order to eliminate the coffee ring effect formed by the quantum dots after the quantum dot material is subjected to ink-jet printing, the organic solvent can be a polar organic solvent, and a surface tension regulator for reducing interfacial tension and the like can be added into the solution of the quantum dot material.
The quantum dot solution can be a solution formed by quantum dots and a solvent, and comprises an aqueous solution of the quantum dots or a chloroform solution of the quantum dots; the polymer can be a composite solution of quantum dots, namely an oil-soluble or water-soluble composite solution formed by mixing the quantum dots, the polymer and a solvent, wherein the oil-soluble composite solution is a composite solution formed by quantum dots, polymethyl methacrylate and chloroform, the polymethyl methacrylate can be replaced by polystyrene and derivatives thereof, and the chloroform can be replaced by organic solvents such as toluene, xylene and anisole; the water-soluble composite solution is a composite mixed solution formed by quantum dots, polyvinyl alcohol and ethanol, wherein the polyvinyl alcohol can be replaced by polyvinylpyrrolidone, polyacrylic acid and derivatives thereof, and the ethanol can be replaced by hydrophilic solvents such as water, methanol, isopropanol and the like. The quantum dots comprise CdTe, cdSe, cdS, znSe, inP, cuInS, cuInSe, pbS cores and core-shell structure quantum dots.
Due to the existence of the tackifier layer 2, the quantum dot solution can not be diffused in disorder due to the fluidity of the liquid, the tackifier layer 2 can block the peripheral diffused quantum dots, and can prevent the quantum dot solution from being dripped and diffused, so that the quantum dot solution is limited in a specific area, and the coffee ring effect generated by the dispersion of the quantum dot solution is eliminated, and uniform quantum dot pixels are formed.
Further, the printed quantum dot pixels are subjected to drying treatment or low-temperature vacuumizing treatment so as to evaporate benign solvents in the quantum dot solutions, and the pixel-level quantum dots are reserved to obtain red quantum dots 3a and green quantum dots 3b.
The preparation method of the quantum dot color conversion layer 10 provided by the application comprises the steps of preparing an adhesion promoter layer 2 on a transparent substrate 1; red quantum dots 3a and green quantum dots 3b are prepared on the tackifier layer 2 in a regular arrangement to form a plurality of quantum dot repeating units 3, each quantum dot repeating unit 3 including a red quantum dot 3a, a green quantum dot 3b and a blank dot 3c. By adding the tackifier layer 2 in the preparation process of the quantum dot color conversion layer 10, the adhesion degree of the quantum dots is improved, and meanwhile, the connection strength of the quantum dot color conversion layer 10 and the single-color Micro-LED array 20 is increased.
In a preferred embodiment, referring to fig. 2, the method further comprises, before preparing the adhesion promoter layer 2 on the transparent substrate 1:
the color filter film 4 is plated on the transparent substrate 1, and the color filter film 4 is etched in a partitioning manner to form the regularly arranged color filter film 4, so that the red quantum dots 3a and the green quantum dots 3b are prepared on the regularly arranged color filter film 4.
Blue light is filtered through the color filter film 4, and the red quantum dots 3a and the green quantum dots 3b are arranged on the color filter film 4, so that the blue light cannot be emitted along with the quantum dots after the quantum dots are excited to emit light, and the purity of light color is improved.
The application also provides a quantum dot color conversion layer 10, refer to fig. 2, which is prepared by the preparation method of the quantum dot color conversion layer 10.
The application also provides a preparation method of the full-color Micro-LED100, referring to FIG. 3 and FIG. 4, comprising:
s1: a single-color Micro-LED array 20 is provided, the single-color Micro-LED array 20 including a plurality of Micro-LED chips 22, and a partition wall 24 is provided between the plurality of Micro-LED chips 22 such that the plurality of Micro-LED chips 22 are independent from each other.
Specifically, the method for preparing the single-color Micro-LED array 20 comprises the following steps:
step 1: and etching the LED epitaxial wafer to form a plurality of table tops exposing part of the first semiconductor layer, so as to obtain the P-type semiconductor table top array.
The LED epitaxial wafer comprises a substrate, a first semiconductor layer, a multiple quantum well structure and a second semiconductor layer which are sequentially stacked from bottom to top. The LED epitaxial wafer is etched to expose a portion of the first semiconductor layer, and a plurality of mesas (Mesa) are obtained.
Specifically, the photoresist is used as a mask, an Inductively Coupled Plasma (ICP) etching method is adopted to etch the LED epitaxial wafer, the second semiconductor layer and the multiple quantum well structure on the upper part of the LED epitaxial wafer are removed, and part of the first semiconductor layer is exposed; and removing residual photoresist by adopting ICP dry photoresist removal or photoresist removal liquid wet photoresist removal, and cleaning by using strong acid strong oxidizing solution to obtain a plurality of mesas (Mesa). Each Mesa includes a multiple quantum well structure and a second semiconductor layer, which are stacked from bottom to top, the number of the Mesa may be set according to actual needs, and the size of each Mesa and the spacing between adjacent Mesa may also be set according to actual needs, where the spacing between adjacent Mesa is preferably smaller than the size of a single Mesa.
The etching process gas may be a mixed gas of Ar and BI3, wherein Ar and BI 3 The gas flows of (a) may be set to 10sccm, the etching gas pressure may be set to 8mTorr, the radio frequency power (Source RF) may be set to 100W, the radio frequency Bias (Bias RF) may be set to 20W, and the etching time may be set to 10min; and etching and removing the residual photoresist to obtain the P-type semiconductor mesa array.
Step 2: a current spreading layer is deposited on the mesa.
Manufacturing a mask pattern on the P-type semiconductor mesa array obtained in the step 1 by adopting photoresist, and depositing a current diffusion layer on the mask pattern by adopting an electron beam evaporation, plasma sputtering or thermal evaporation method; the current spreading layer on the first semiconductor layer is then removed, leaving only the current spreading layer on the Mesa. The current diffusion layer may be a single-layer metal layer, a multi-layer metal layer, an ITO layer, or the like, and is preferably any one of nickel-gold metal, aluminum-based metal, and ITO.
Specifically, in the case where the current diffusion layer is nickel-gold metal, the wafer provided with the current diffusion layer is placed in N at 570 ℃ 2 Treating in a gas atmosphere for 5min, and then placing in N 2 And O 2 Treating in a mixed gas environment for 5min, wherein N 2 And O 2 And the volume ratio of (2) is 4:1, and finally, the rapid cooling is carried out.
In the case where the current diffusion layer is a metal mainly composed of aluminum, the wafer provided with the current diffusion layer is placed in N at 850 DEG C 2 Treating in a gas environment for 5min; in the case where the current diffusion layer is ITO, the wafer provided with the current diffusion layer is placed at a temperature of 600 ℃ in O 2 Treating in a gas atmosphere for 300s to oxidize ITO, and then placing in N at 750deg.C 2 The ITO alloy was treated in a gaseous atmosphere for 30s.
Step 3: and depositing a metal layer on the current diffusion layer and the first semiconductor layer to form an electrode structure.
The metal layer can be deposited by adopting an electron beam evaporation, plasma sputtering or thermal evaporation method, and different metal layers can be obtained by adopting a two-time photoetching stripping method; the material of the metal layer can be one or more of titanium, aluminum, gold, chromium, nickel and platinum.
Step 4: and depositing a passivation layer on the metal layer, and etching the passivation layer to etch an electrode contact hole.
The passivation layer may be deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD); the electrode contact hole can be obtained by dry etching and/or wet etching; the passivation layer can be made of silicon dioxide, silicon nitride, aluminum oxide and other materials. As a specific example, a PECVD process is used to deposit a passivation layer of silicon dioxide, wherein SiH 4 The flow rate of (2) was increased from 10sccm to 20sccm, the deposition temperature was 160 ℃, the deposition time was 12min, and the deposition thickness was 600nm.
In this embodiment, the "dry etching and wet etching" manner is preferred, wherein in the dry etching process, the etching gas pressure may be set to 8mTorr, the process gas may be a mixed gas of Ar and SF6, the gas flow rates of Ar and SF6 may be set to 60sccm and 20sccm, the radio frequency power (Source RF) may be set to 100W, the radio frequency Bias (Bias RF) may be set to 20W, and the etching time may be set to 280s; in the wet etching process, the etching solution can adopt BOE or 777 solution, and the wet etching time depends on the thickness of the passivation layer left after dry etching; if the process requirement is not high, the electrode contact hole can be obtained by adopting a dry etching or wet etching mode independently; the positions, sizes, shapes, numbers, etc. of the electrode contact holes may be set according to actual needs.
Step 5: and depositing a contact pad at the electrode contact hole to form an array comprising a plurality of Micro-LED chips.
Depositing a contact pad by adopting a photoetching stripping method; the contact pad can be one or more of indium, titanium, aluminum, nickel, gold, chromium, platinum and other metals; as a specific example, a mask pattern is made of photoresist, and indium metal is deposited as a contact pad by electron beam evaporation, plasma sputtering, or thermal evaporation; and removing the indium metal except the electrode contact hole by adopting a stripping method, so that the indium metal is electrically connected with the electrode layer through the electrode contact hole.
Step 6: and arranging a partition wall 24 among the Micro-LED chips to obtain the single-color Micro-LED array.
The photoresist isolation wall 24 is prepared among pixel light-emitting units of the single-color Micro-LED array through a photoetching process so as to solve the problem of light crosstalk when blue light Micro-LEDs excite quantum dots to emit light. Preferably, the partition walls 24 are black photoresist.
S2: the quantum dot color conversion layer 10 is inversely bonded on the single-color Micro-LED array 20 such that the red quantum dots, green quantum dots, and blank dots in each quantum dot repeating unit are disposed toward the Micro-LED chip 22, respectively.
Specifically, the red quantum dot emits red fluorescence when excited by blue light, and the green quantum dot emits green fluorescence when excited by blue light, and since the light emitted by the single-color Micro-LED array 20 is blue light, after the quantum dot color conversion layer 10 is inversely combined to the single-color Micro-LED array 20, the Micro-LED chip 22 at the position corresponding to the red quantum dot, the Micro-LED chip 22 at the position corresponding to the green quantum dot, and the Micro-LED chip 22 at the position corresponding to the blank point form a light emitting pixel unit of the full-color Micro-LED100, thereby forming three primary colors.
The full-color Micro-LED100 provided by the application is formed by reversely adhering the quantum dot color conversion layer 10 to the upper part of the single-color Micro-LED array 20, and the quantum dot color conversion layer 10 and the single-color Micro-LED array 20 are respectively manufactured, so that the process is simple.
Preferably, referring to fig. 2, 4 and 5, the side of the barrier wall 24 to which the adhesion promoter layer 2 is adhered is a roughened surface 25.
Specifically, the partition wall 24 is made of black photoresist, and the surface of the partition wall 24 adhered to the adhesion promoter layer 2 is a rough surface 25, so that the friction force between the partition wall 24 and the adhesion promoter layer 2 can be increased, the connection strength between the quantum dot color conversion layer 10 and the single-color Micro-LED array 20 is increased, and the reliability of the full-color Micro-LED is improved.
Preferably, when the partition wall 24 is black photoresist, the preparation method of the rough surface 25 includes: .
Preparing a coarsened mask plate corresponding to the position of the isolation wall;
exposing a partition wall formed by black photoresist through a coarsening mask plate part;
cleaning black photoresist of the exposed part;
leaving the roughened partition wall to form a partition wall with a roughened surface.
Preferably, referring to fig. 4, the height of the partition wall 24 is greater than the sum of the thickness of the Micro-LED chip 22 and the thickness of the quantum dots.
Specifically, by the arrangement, the quantum dots are not in direct contact with the quantum hydrazine active layer and the P-GaN layer of the Micro-LED chip 22, so that the influence of the temperature rise of the P-GaN layer on the performance of the quantum dots is avoided, the service life of the device is prolonged, and the influence of the quantum dots on the performance of the quantum hydrazine active layer is avoided.
The application also provides a full-color Micro-LED, which is prepared by the preparation method of the full-color Micro-LED.
Referring to fig. 4, the quantum dot adhesion of the quantum color conversion layer 10 of the full-color Micro-LED100 prepared by the full-color Micro-LED preparation method is strong, the connection with the single-color Micro-LED array 20 is stable, and the device reliability is high.
The application also provides a display device comprising the full-color Micro-LED.
The display device may be, for example, a display screen applied to an electronic apparatus. The electronic device may include: any device with a display screen, such as a smart phone, a smart watch, a notebook computer, a tablet computer, a vehicle recorder, a navigator, and the like.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Furthermore, those skilled in the art will appreciate that while some embodiments herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the application and form different embodiments. For example, in the claims below, any of the claimed embodiments may be used in any combination. The information disclosed in this background section is only for enhancement of understanding of the general background of the application and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Claims (12)
1. The preparation method of the full-color Micro-LED is characterized by comprising the following steps:
providing a single-color Micro-LED array, wherein the single-color Micro-LED array comprises a plurality of Micro-LED chips, and a partition wall is arranged among the Micro-LED chips so that the Micro-LED chips are independent;
preparing a quantum dot color conversion layer, wherein the preparation process of the quantum dot color conversion layer comprises the following steps:
preparing an adhesion promoter layer on a transparent substrate, wherein the adhesion promoter layer is polydimethylsiloxane, and the adhesion promoter layer is a flat surface;
preparing red quantum dots and green quantum dots which are regularly arranged on the tackifier layer to form a plurality of quantum dot repeating units, wherein each quantum dot repeating unit comprises a red quantum dot, a green quantum dot and a blank point, and the quantum dot color conversion layer is obtained;
and reversely bonding the quantum dot color conversion layer on the single-color Micro-LED array, so that the red quantum dots, the green quantum dots and the blank spots in each quantum dot repeating unit are respectively arranged towards the Micro-LED chip correspondingly.
2. The method of manufacturing according to claim 1, wherein the step of manufacturing the adhesion promoter layer on the transparent substrate further comprises:
plating a color filter film on the transparent substrate;
and carrying out partition etching on the color filter film to form a color filter film with regular arrangement, so that the red quantum dots and the green quantum dots are prepared on the color filter film with regular arrangement.
3. The method of manufacturing according to claim 1, wherein the step of manufacturing the adhesion promoter layer on the transparent substrate comprises:
spin-coating a tackifier on the surface of the transparent substrate at a rotating speed of 800-1200 r/min for 20-40 s to obtain a transparent substrate coated with the tackifier;
and placing the transparent substrate coated with the tackifier in a vacuum oven for heating and curing to obtain the tackifier layer.
4. The method of claim 3, wherein said placing said transparent substrate coated with adhesion promoter in a vacuum oven for heat curing provides said adhesion promoter layer comprising:
firstly, placing the transparent substrate coated with the tackifier in a vacuum oven for 5-20 min;
and heating the vacuum oven to 100-140 ℃, and heating for 1-3 hours to cure the tackifier to obtain the tackifier layer.
5. The method of preparing according to claim 1, wherein preparing regularly arranged red quantum dots and green quantum dots on the adhesion promoter layer comprises:
using an inkjet printing device to press different quantum dot solutions onto the tackifier layer at a set speed through a spray head to obtain the regularly arranged red quantum dots and green quantum dots;
the inkjet printing apparatus contains a head alignment system and a quantum dot solution loading system.
6. The method of manufacturing according to claim 5, further comprising, after the different quantum dot solutions are pressed onto the adhesion promoter layer at a set speed by a head using an inkjet printing apparatus:
and drying or vacuumizing at low temperature the printed quantum dot solution to evaporate benign solvent in the quantum dot solution to obtain pixel-level red quantum dots and green quantum dots.
7. The method according to any one of claims 1 to 6, wherein the transparent substrate is glass, an acrylic plate, or quartz.
8. The method of claim 1, wherein the method of preparing a single color Micro-LED array comprises:
etching the LED epitaxial wafer to form a plurality of table tops exposing part of the first semiconductor layer to obtain a P-type semiconductor table top array;
depositing a current diffusion layer on the mesa;
depositing a metal layer on the current diffusion layer and the first semiconductor layer to form an electrode structure;
depositing a passivation layer on the metal layer, and etching the passivation layer to etch an electrode contact hole;
depositing a contact pad at the electrode contact hole to form an array comprising a plurality of Micro-LED chips;
and arranging a partition wall among the Micro-LED chips to obtain the single-color Micro-LED array.
9. The method of claim 1, wherein the side of the barrier wall to which the adhesion promoter layer is adhered is a roughened surface.
10. The method of claim 9, wherein the spacer is black photoresist, and the method of preparing the roughened surface comprises:
preparing a coarsened mask plate corresponding to the position of the partition wall;
exposing the partition wall through the coarsened mask plate part;
and cleaning the exposed black photoresist to form the isolation wall with the rough surface.
11. A full-color Micro-LED, characterized in that it is prepared by the method for preparing a full-color Micro-LED according to any one of claims 1 to 10.
12. A display device comprising the full-color Micro-LED of claim 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111652382.2A CN114300589B (en) | 2021-12-30 | 2021-12-30 | Full-color Micro-LED, preparation method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111652382.2A CN114300589B (en) | 2021-12-30 | 2021-12-30 | Full-color Micro-LED, preparation method thereof and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114300589A CN114300589A (en) | 2022-04-08 |
| CN114300589B true CN114300589B (en) | 2023-10-13 |
Family
ID=80972722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111652382.2A Active CN114300589B (en) | 2021-12-30 | 2021-12-30 | Full-color Micro-LED, preparation method thereof and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114300589B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114927600A (en) * | 2022-05-25 | 2022-08-19 | 厦门大学 | Micro LED full-color display device based on micro-fluidic technology and preparation method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898628A (en) * | 2017-04-28 | 2017-06-27 | 深圳市华星光电技术有限公司 | Led display panel |
| CN108987613A (en) * | 2018-07-06 | 2018-12-11 | 致晶科技（北京）有限公司 | The preparation method of perovskite quantum dot array |
| CN110620127A (en) * | 2018-06-19 | 2019-12-27 | 青岛海信电器股份有限公司 | Display device and manufacturing method of monochromatic micro light-emitting diode |
| CN113178513A (en) * | 2021-04-29 | 2021-07-27 | 上海天马微电子有限公司 | Light-emitting device, display panel and display device |
| CN113488496A (en) * | 2021-06-17 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate, preparation method thereof and display device |
| CN113492607A (en) * | 2020-04-08 | 2021-10-12 | 陈学仕 | Manufacturing method of inkjet printing packaging type quantum dot, light conversion unit and display panel |
| CN113725249A (en) * | 2021-08-30 | 2021-11-30 | 京东方科技集团股份有限公司 | Chip structure, manufacturing method and display device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11721786B2 (en) * | 2019-06-27 | 2023-08-08 | Intel Corporation | Micro light-emitting diode displays having color correction films applied thereto |
| CN115312509A (en) * | 2020-11-30 | 2022-11-08 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
-
2021
- 2021-12-30 CN CN202111652382.2A patent/CN114300589B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898628A (en) * | 2017-04-28 | 2017-06-27 | 深圳市华星光电技术有限公司 | Led display panel |
| CN110620127A (en) * | 2018-06-19 | 2019-12-27 | 青岛海信电器股份有限公司 | Display device and manufacturing method of monochromatic micro light-emitting diode |
| CN108987613A (en) * | 2018-07-06 | 2018-12-11 | 致晶科技（北京）有限公司 | The preparation method of perovskite quantum dot array |
| CN113492607A (en) * | 2020-04-08 | 2021-10-12 | 陈学仕 | Manufacturing method of inkjet printing packaging type quantum dot, light conversion unit and display panel |
| CN113178513A (en) * | 2021-04-29 | 2021-07-27 | 上海天马微电子有限公司 | Light-emitting device, display panel and display device |
| CN113488496A (en) * | 2021-06-17 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate, preparation method thereof and display device |
| CN113725249A (en) * | 2021-08-30 | 2021-11-30 | 京东方科技集团股份有限公司 | Chip structure, manufacturing method and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114300589A (en) | 2022-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20230101190A1 (en) | Semiconductor continuous array layer | |
| CN114300602B (en) | Full-color Micro-LED, preparation method thereof and display device | |
| US11721786B2 (en) | Micro light-emitting diode displays having color correction films applied thereto | |
| CN110911537B (en) | Common cathode LED chip and manufacturing method thereof | |
| US20200411491A1 (en) | Micro light-emitting diode displays having microgrooves or wells | |
| CN109216590B (en) | Preparation method of flexible color micro-LED display device | |
| CN110993647B (en) | Method for manufacturing active matrix display device | |
| US11515297B2 (en) | Micro light-emitting diode displays having colloidal or graded index quantum dot films | |
| US11901493B2 (en) | Semiconductor devices incorporating quantum dots | |
| CN109301047B (en) | Micro-size imaging LED chip and manufacturing method thereof | |
| CN111508989A (en) | Display substrate and preparation method thereof, display panel and preparation method thereof | |
| CN114300589B (en) | Full-color Micro-LED, preparation method thereof and display device | |
| CN114256391A (en) | Manufacturing method of display substrate, display substrate and display device | |
| CN209929349U (en) | Display panel | |
| CN114335264A (en) | Full-color Micro-LED, preparation method thereof and display device | |
| CN114759057A (en) | Micro LED display chip preparation method and Micro LED display chip | |
| WO2021148895A1 (en) | Light processing device array and method for manufacturing thereof | |
| CN215342604U (en) | LED chip structure and display module | |
| WO2023197480A1 (en) | Color conversion structure manufacturing method, color conversion structure, crystal grain manufacturing method and crystal grain | |
| TWI804898B (en) | Light emitting array | |
| CN114551495A (en) | Display device and method of manufacturing the same | |
| CN209929348U (en) | Display panel | |
| CN113270441B (en) | LED chip structure, preparation method thereof, display module and electronic equipment | |
| WO2023092572A1 (en) | Hybrid light-emitting unit, display panel and preparation method therefor | |
| CN115799410A (en) | Preparation method of flexible Micro-LED array based on surface Micro-printing technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |