CN114300589A - Full-color Micro-LED, preparation method thereof and display device - Google Patents
Full-color Micro-LED, preparation method thereof and display device Download PDFInfo
- Publication number
- CN114300589A CN114300589A CN202111652382.2A CN202111652382A CN114300589A CN 114300589 A CN114300589 A CN 114300589A CN 202111652382 A CN202111652382 A CN 202111652382A CN 114300589 A CN114300589 A CN 114300589A
- Authority
- CN
- China
- Prior art keywords
- layer
- micro
- quantum dot
- led
- quantum dots
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The application provides a full-color Micro-LED and a preparation method and a display device thereof, and relates to the technical field of LED display. By adding the tackifier layer in the preparation process of the quantum dot color conversion layer, the adhesion strength of the quantum dots is improved, and meanwhile, the connection strength of the quantum dot color conversion layer and the monochromatic Micro-LED array is increased. The full-color Micro-LED is inversely adhered to the monochromatic Micro-LED array through the quantum dot color conversion layer, the quantum dot color conversion layer and the monochromatic Micro-LED array are manufactured respectively, and the process is simple.
Description
Technical Field
The application relates to the technical field of LED display, in particular to a full-color Micro-LED, a preparation method thereof and a display device.
Background
Micro-LED shows to be honored as the next generation display technology behind LED and OLED, Micr o-LED realizes monochromatic relatively simply, through flip-chip structure encapsulation and drive IC laminating just can realize, nevertheless will realize full-color just relatively complicated, need to change the crystalline grain of pasting red, blue, green three-colour with traditional RGB three-colour array in turn, imbeds hundreds of thousands of LED crystalline grains, and it is higher to LED crystalline grain light efficiency, the uniformity of wavelength, yield requirement.
Quantum dots, which may also be referred to as nanocrystals, are nanoparticles composed of group II-VI or III-V elements. The particle size of the quantum dots is generally between 1 nm and 10nm, and the quantum dots are suitable for Micro-LEDs with tiny sizes. The quantum dots have the effects of electroluminescence and photoluminescence, can emit light after being excited, and have high color purity and saturation and wide color gamut. In addition, the quantum dot has a simple structure, is thinned and can be curled, and is very suitable for application of Micro-LEDs. However, how to combine the quantum dots with the Micro-LED to achieve the colorization of the Micro-LED is still an urgent problem to be solved.
Disclosure of Invention
The application aims to provide a full-color Micro-LED and a preparation method thereof, so as to solve the problem of combination of quantum dots and the Micro-LED.
In order to achieve the above object, the present application provides a method for preparing a full-color Micro-LED, comprising:
providing a single-color Micro-LED array, wherein the single-color Micro-LED array comprises a plurality of Micro-LED chips, and a separation wall is arranged among the plurality of Micro-LED chips so that the plurality of Micro-LED chips are independent;
preparing a quantum dot color conversion layer, wherein the preparation process of the quantum dot color conversion layer comprises the following steps:
preparing an adhesion promoter layer on a transparent substrate;
preparing red quantum dots and green quantum dots which are regularly distributed on the tackifier layer to form a plurality of quantum dot repeating units, wherein each quantum dot repeating unit comprises a red quantum dot, a green quantum dot and a blank dot to obtain the quantum dot color conversion layer;
and inversely bonding the quantum dot color conversion layer on the single-color Micro-LED array so that the red quantum dots, the green quantum dots and the blank dots in each quantum dot repeating unit are respectively arranged towards the Micro-LED chip correspondingly.
Preferably, the method further comprises the following steps of before preparing the adhesion promoter layer on the transparent substrate:
plating a color filter film on the transparent substrate;
and carrying out partition etching on the color filter film to form the color filter film in regular arrangement, so that the red quantum dots and the green quantum dots are prepared on the color filter film in regular arrangement.
Preferably, the preparing of the adhesion promoter layer on the transparent substrate includes:
spin-coating a tackifier on the surface of the transparent substrate at a rotating speed of 800-1200 r/min for 20-40 s to obtain the transparent substrate coated with the tackifier;
and heating and curing the transparent substrate coated with the tackifier in a vacuum oven to obtain the tackifier layer.
Preferably, the transparent substrate coated with the adhesion promoter is placed in a vacuum oven for heating and curing to obtain the adhesion promoter layer, and the adhesion promoter layer comprises:
placing the transparent substrate coated with the tackifier in a vacuum oven for 5-20 min;
and heating the vacuum oven to 100-140 ℃, and heating for 1-3 h to cure the tackifier to obtain the tackifier layer.
Preferably, the preparing of the red quantum dots and the green quantum dots which are regularly arranged on the adhesion promoter layer includes:
pressing different quantum dot solutions onto the tackifier layer at a set speed by using an ink-jet printing device through a spray head to obtain the red quantum dots and the green quantum dots which are regularly arranged;
the ink jet printing apparatus contains a jet alignment system and a quantum dot solution loading system.
Preferably, after the different quantum dot solutions are pressed onto the adhesion promoter layer at a set speed by a nozzle by using an inkjet printing device, the method further comprises the following steps:
and drying or vacuumizing the printed quantum dot solution at low temperature to evaporate a benign solvent in the quantum dot solution to obtain pixel-level red quantum dots and green quantum dots.
Preferably, the transparent substrate is glass, acrylic plate or quartz.
Preferably, the preparation method of the monochromatic Micro-LED array comprises the following steps:
etching the LED epitaxial wafer to form a plurality of table tops exposing part of the first semiconductor layer to obtain a P-type semiconductor table top array;
depositing a current spreading layer on the mesa;
depositing a metal layer on the current diffusion layer and the first semiconductor layer to form an electrode structure;
depositing a passivation layer on the metal layer, and etching the passivation layer to etch an electrode contact hole;
depositing a contact pad at the electrode contact hole to form an array comprising a plurality of Micro-LED chips;
and arranging a separation wall between the plurality of Micro-LED chips to obtain the monochromatic Micro-LED array.
Preferably, the surface of the partition wall, which is adhered to the tackifier layer, is a rough surface.
Preferably, the isolation wall is a black photoresist, and the preparation method of the rough surface comprises the following steps:
preparing a coarsening mask corresponding to the position of the isolation wall;
partially exposing the isolation wall through the coarsening mask plate;
and cleaning the exposed black photoresist to form the isolation wall with a rough surface.
The application also provides a full-color Micro-LED prepared by the preparation method of the full-color Micro-LED.
The application also provides a display device which comprises the full-color Micro-LED.
Compared with the prior art, the beneficial effect of this application includes:
the preparation of the quantum dot color conversion layer of the full-color Micro-LED provided by the application comprises the steps of preparing a tackifier layer on a transparent substrate; preparing red quantum dots and green quantum dots which are regularly arranged on the tackifier layer to form a plurality of quantum dot repeating units, wherein each quantum dot repeating unit comprises a red quantum dot, a green quantum dot and a blank dot. By adding the tackifier layer in the preparation process of the quantum dot color conversion layer, the adhesion strength of the quantum dots is improved, and meanwhile, the connection strength of the quantum dot color conversion layer and the monochromatic Micro-LED array is increased.
The full-color Micro-LED is inversely adhered to the monochromatic Micro-LED array through the quantum dot color conversion layer, the quantum dot color conversion layer and the monochromatic Micro-LED array are manufactured respectively, and the process is simple.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments are briefly described below, and it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope of the present application.
FIG. 1 is a schematic flow chart of a method for preparing a quantum dot color conversion layer according to the present invention;
FIG. 2 is a schematic diagram of a process for preparing a quantum dot color conversion layer according to the method of the present invention;
FIG. 3 is a schematic flow chart of a method for preparing a full-color Micro-LED according to the present invention;
FIG. 4 is a schematic structural diagram of a full-color Micro-LED according to the present invention;
fig. 5 is an enlarged schematic view of a portion a of fig. 4.
The reference signs are:
10-quantum dot color conversion layer; 1-a transparent substrate; 2-an adhesion promoter layer; 3-a quantum dot repeat unit; 3 a-red quantum dots; 3 b-green quantum dots; 3 c-blank spot; 4-color filter film; 20-a monochromatic Micro-LED array; 22-Micro-LED chip; 24-a partition wall; 25-rough surface; 100-full color Micro-LED.
Detailed Description
The terms as used herein:
"prepared from … …" is synonymous with "comprising". The terms "comprises," "comprising," "includes," "including," "has," "having," "contains," "containing," or any other variation thereof, as used herein, are intended to cover a non-exclusive inclusion. For example, a composition, process, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, process, method, article, or apparatus.
The conjunction "consisting of … …" excludes any unspecified elements, steps or components. If used in a claim, the phrase is intended to claim as closed, meaning that it does not contain materials other than those described, except for the conventional impurities associated therewith. When the phrase "consisting of … …" appears in a clause of the subject matter of the claims rather than immediately after the subject matter, it defines only the elements described in the clause; other elements are not excluded from the claims as a whole.
When an amount, concentration, or other value or parameter is expressed as a range, preferred range, or as a range of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether ranges are separately disclosed. For example, when the range "1 ~ 5" is disclosed, the ranges described should be construed to include the ranges "1 ~ 4", "1 ~ 3", "1 ~ 2 and 4 ~ 5", "1 ~ 3 and 5", and the like. When a range of values is described herein, unless otherwise stated, the range is intended to include the endpoints thereof and all integers and fractions within the range.
In these examples, the parts and percentages are by mass unless otherwise indicated.
The present application provides a method for preparing a quantum dot color conversion layer, please refer to fig. 1 and fig. 2, which includes:
the first step is as follows: an adhesion promoter layer 2 is prepared on a transparent substrate 1.
Specifically, referring to fig. 2, the transparent substrate 1 may be a hard transparent material such as glass, acrylic plate, or quartz. The transparent substrate 1 plays a role of supporting, and quantum dots of the quantum dots are formed on the surface of the transparent substrate 1 through curing.
The tackifier layer 2 has viscosity, the tackifier layer 2 can be prepared on the transparent substrate 1 in a coating mode, and the adhesion of the quantum dots can be improved and the stability of the quantum dots can be improved through the viscosity of the tackifier layer 2.
Specifically, the tackifier layer 2 may be Polydimethylsiloxane (PDMS), for example. And spin-coating PDMS glue on the surface of the transparent substrate 1, wherein the rotation speed of a spin coater is kept at 800-1200 r/min during spin coating, and the spin coating is carried out for 20-40 s. After the spin coating is finished, standing the transparent substrate on the surface of a platform with good levelness in a vacuum oven for 5-20 min, and allowing bubbles in the PDMS glue to escape from a material system; and finally, heating the substrate in a vacuum oven at 100-140 ℃ for 1-3 h to realize curing of the PDMS glue, thereby obtaining the tackifier layer 2.
Preferably, the rotating speed of the spin coater is kept at 1000 r/min during spin coating, and the spin coating lasts for 30 s.
Preferably, after the spin coating is finished, standing the transparent substrate on the surface of the platform with good levelness in a vacuum oven for 10min, and allowing bubbles in the PDMS glue to escape from the material system; and finally, heating the mixture in a vacuum oven at 120 ℃ for 2 hours to cure the PDMS glue.
The second step is that: red quantum dots 3a and green quantum dots 3b are prepared on the tackifier layer 2 in a regular arrangement to form a plurality of quantum dot repeating units 3, and each quantum dot repeating unit 3 includes a red quantum dot 3a, a green quantum dot 3b, and blank dots 3 c.
Specifically, the arrangement of the red quantum dots 3a and the green quantum dots 3b is related to the light-emitting pixel unit on the chip, the light-emitting pixel unit includes three colors of red, blue and green, and the arrangement of the red quantum dots 3a and the green quantum dots 3b is only required to satisfy that each quantum dot repeating unit 3 includes one red quantum dot 3a, one green quantum dot 3b and a blank dot 3 c. The blank spots 3c refer to positions on the tackifier layer 2 where the red quantum dots 3a and the green quantum dots 3b are not prepared.
Specifically, referring to fig. 2, the red quantum dots 3a, the green quantum dots 3b and the blank dots 3c in the quantum dot repeating unit 3 may be arranged in such a manner that the red quantum dots 3a and the green quantum dots 3b are arranged at intervals through the blank dots 3c, or the red quantum dots 3a and the green quantum dots 3b are arranged adjacently.
Specifically, the quantum dots have photoluminescence characteristics, the red quantum dots 3a release red fluorescence under excitation of blue light, and the green quantum dots 3b release green fluorescence under excitation of blue light. Referring to fig. 4, since the light emitted from the monochromatic Micro-LED array 20 is blue light, after the quantum dot color conversion layer 10 is inversely combined to the monochromatic Micro-LED array 20, the Micro-LED chip 22 at the corresponding position of the red quantum dot, the Micro-LED chip 22 at the corresponding position of the green quantum dot, and the Micro-LED chip 22 at the corresponding position of the blank dot form a light-emitting pixel unit.
In a preferred embodiment, red quantum dots 3a and green quantum dots 3b are prepared on the adhesion promoter layer 2 in a regular arrangement, including: and pressing different quantum dot solutions onto the tackifier layer 2 at a set speed by using an ink-jet printing device through a spray head to obtain the red quantum dots 3a and the green quantum dots 3b which are regularly arranged. The ink-jet printing equipment comprises a spray head alignment system and a quantum dot solution loading system.
The quantum dots prepared by the ink-jet printing mode have high precision, high resolution and high material utilization ratio, and can be printed by single pixel points.
The quantum dot solution can be hydrophobic quantum dot material solution dissolved in organic solvent, further, in order to eliminate the coffee ring effect formed by quantum dots after the quantum dot material is subjected to ink-jet printing, the organic solvent can be polar organic solvent, and a surface tension regulator for reducing interfacial tension can be added into the quantum dot material solution.
The quantum dot solution can be a solution formed by quantum dots and a solvent, and comprises an aqueous solution of the quantum dots or a chloroform solution of the quantum dots; the composite solution can also be a composite solution of quantum dots, namely an oil-soluble or water-soluble composite solution formed by mixing the quantum dots, a polymer and a solvent, and an oil-soluble composite solution such as a composite solution formed by the quantum dots, polymethyl methacrylate and chloroform, wherein the polymethyl methacrylate can also be replaced by polystyrene and derivatives thereof, and the chloroform can also be replaced by organic solvents such as toluene, xylene, anisole and the like; the water-soluble composite solution is a composite mixed solution formed by quantum dots, polyvinyl alcohol and ethanol, wherein the polyvinyl alcohol can be replaced by polyvinylpyrrolidone, polyacrylic acid and derivatives thereof, and the ethanol can be replaced by hydrophilic solvents such as water, methanol, isopropanol and the like. The quantum dots comprise CdTe, CdSe, CdS, ZnSe, InP, CuInS, CuInSe, PbS cores and core-shell structure quantum dots thereof.
Due to the existence of the tackifier layer 2, the quantum dot solution cannot diffuse disorderly due to the liquidity of the liquid, the tackifier layer 2 can block the quantum dots diffused around, and the quantum dot solution can be prevented from dripping and diffusing, so that the quantum dot solution is limited in a specific area, the coffee ring effect generated by the dispersion of the quantum dot solution is eliminated, and uniform quantum dot pixels are formed.
Further, drying or low-temperature vacuumizing is performed on the printed quantum dot pixels, so that benign solvents in the quantum dot solution are evaporated, pixel-level quantum dots are reserved, and the red quantum dots 3a and the green quantum dots 3b are obtained.
The preparation method of the quantum dot color conversion layer 10 comprises the steps of preparing an adhesion promoter layer 2 on a transparent substrate 1; red quantum dots 3a and green quantum dots 3b are prepared on the tackifier layer 2 in a regular arrangement to form a plurality of quantum dot repeating units 3, and each quantum dot repeating unit 3 includes a red quantum dot 3a, a green quantum dot 3b, and blank dots 3 c. By adding the tackifier layer 2 in the preparation process of the quantum dot color conversion layer 10, the adhesion strength of the quantum dots is improved, and meanwhile, the connection strength of the quantum dot color conversion layer 10 and the monochromatic Micro-LED array 20 is increased.
In a preferred embodiment, with continuing reference to fig. 2, before preparing the adhesion promoter layer 2 on the transparent substrate 1, the method further comprises:
the transparent substrate 1 is coated with the color filter film 4, and the color filter film 4 is etched in a partitioning manner to form the color filter film 4 in regular arrangement, so that the red quantum dots 3a and the green quantum dots 3b are prepared on the color filter film 4 in regular arrangement.
Through setting up colored filter coating 4 and filtering blue light, set up red quantum dot 3a and green quantum dot 3b on colored filter coating 4 for blue light can not follow quantum dot's transmission away after arousing quantum dot and giving out light, improves the purity of photochromic.
The present application further provides a quantum dot color conversion layer 10, please refer to fig. 2, which is prepared by the above method for preparing the quantum dot color conversion layer 10.
The present application further provides a method for preparing a full-color Micro-LED100, please refer to fig. 3 and fig. 4, which includes:
s1: a single color Micro-LED array 20 is provided, the single color Micro-LED array 20 comprising a plurality of Micro-LED chips 22, with a separation wall 24 disposed between the plurality of Micro-LED chips 22, such that the plurality of Micro-LED chips 22 are independent of each other.
Specifically, the preparation method of the monochromatic Micro-LED array 20 comprises the following steps:
step 1: and etching the LED epitaxial wafer to form a plurality of mesas exposing part of the first semiconductor layer to obtain the P-type semiconductor mesa array.
The LED epitaxial wafer comprises a substrate, a first semiconductor layer, a multi-quantum well structure and a second semiconductor layer which are sequentially stacked from bottom to top. And etching the LED epitaxial wafer to expose part of the first semiconductor layer and obtain a plurality of mesas (Mesa).
Specifically, the photoresist is used as a mask, an Inductively Coupled Plasma (ICP) etching method is adopted to etch the LED epitaxial wafer, a part of the second semiconductor layer and the multi-quantum well structure on the LED epitaxial wafer are removed, and a part of the first semiconductor layer is exposed; and removing the residual photoresist by adopting an ICP dry photoresist removing method or a photoresist removing liquid wet photoresist removing method, and cleaning by using a strong acid strong oxidizing solution to obtain a plurality of mesas (Mesa). Each Mesa comprises a multi-quantum well structure and a second semiconductor layer which are stacked from bottom to top, the number of the Mesas can be set according to actual needs, the size of each Mesa and the distance between every two adjacent Mesas can also be set according to actual needs, and the distance between every two adjacent Mesas is preferably smaller than the size of a single Mesa.
The etching process gas may be a mixed gas of Ar and BI3, wherein Ar and BI3The gas flow rates can all be set to 10sccm, the etch gas pressure can be set to 8mTorr, andthe frequency power (Source RF) can be set to 100W, the radio frequency Bias (Bias RF) can be set to 20W, and the etching time can be set to 10 min; and etching and removing the residual photoresist to obtain the P-type semiconductor mesa array.
Step 2: depositing a current spreading layer on the mesa.
Manufacturing a mask pattern on the P-type semiconductor mesa array obtained in the step 1 by adopting photoresist, and depositing a current diffusion layer on the mask pattern by adopting an electron beam evaporation method, a plasma sputtering method or a thermal evaporation method; the current spreading layer on the first semiconductor layer is then removed, leaving only the current spreading layer on Mesa. The current diffusion layer may be a single-layer metal layer, a multilayer metal layer, an ITO layer, or the like, and is preferably any of nickel-gold metal, a metal mainly containing aluminum, and ITO.
Specifically, in the case where the current diffusion layer is nickel-gold metal, the wafer provided with the current diffusion layer was placed on N at a temperature of 570 ℃2Treating in gas atmosphere for 5min, and placing in N2And O2Treating in mixed gas environment for 5min, wherein N2And O2At a volume ratio of 4:1, and finally performing rapid cooling.
In the case where the current diffusion layer is a metal based on aluminum, the wafer provided with the current diffusion layer is placed in N at a temperature of 850 deg.C2Treating in gas environment for 5 min; in the case where the current diffusion layer is ITO, the wafer provided with the current diffusion layer is placed in O at a temperature of 600 deg.C2Treating in a gas atmosphere for 300s to oxidize the ITO, and then placing in N at a temperature of 750 DEG C2And treating for 30s in a gas environment to obtain the ITO alloy.
And step 3: and depositing a metal layer on the current diffusion layer and the first semiconductor layer to form an electrode structure.
The metal layer can be deposited by adopting methods of electron beam evaporation, plasma sputtering or thermal evaporation, and different metal layers can be obtained by two photoetching stripping methods; the material of the metal layer can be one or more of titanium, aluminum, gold, chromium, nickel and platinum.
And 4, step 4: and depositing a passivation layer on the metal layer, and etching the passivation layer to etch the electrode contact hole.
The passivation layer can be deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD); the electrode contact hole can be obtained by adopting a dry etching and/or wet etching mode; the passivation layer can be made of silicon dioxide, silicon nitride, aluminum oxide and the like. As a specific example, a silicon dioxide passivation layer is deposited by PECVD method, wherein SiH4The deposition temperature was 160 deg.C, the deposition time was 12min, and the deposition thickness was 600 nm.
The embodiment preferably adopts a dry etching and wet etching manner, wherein during the dry etching, the etching pressure can be set to 8mTorr, the process gas can be a mixed gas of Ar and SF6, the gas flow rates of Ar and SF6 can be respectively set to 60sccm and 20sccm, the radio frequency power (Source RF) can be set to 100W, the radio frequency Bias (Bias RF) can be set to 20W, and the etching time can be set to 280 s; in the wet etching process, BOE or 777 solution can be used as the etching solution, and the wet etching time depends on the thickness of the passivation layer left after dry etching; if the process requirement is not high, the electrode contact hole can be obtained by independently adopting a dry etching or wet etching mode; the position, size, shape, number, etc. of the electrode contact holes may be set according to actual needs.
And 5: depositing contact pads at the electrode contact holes, forming an array comprising a plurality of Micro-LED chips.
Depositing a contact pad by adopting a photoetching stripping method; the contact pad can adopt one or more of metals such as indium, titanium, aluminum, nickel, gold, chromium, platinum and the like; as a specific embodiment, a mask pattern is made of photoresist, and indium metal is deposited as a contact pad by adopting an electron beam evaporation, plasma sputtering or thermal evaporation method; and removing the indium metal outside the electrode contact hole by adopting a stripping method, so that the indium metal is electrically connected with the electrode layer through the electrode contact hole.
Step 6: and arranging a separation wall 24 between the plurality of Micro-LED chips to obtain the monochromatic Micro-LED array.
The photoresist isolation wall 24 is prepared among the pixel light emitting units of the single-color Micro-LED array through a photoetching process, so that the problem of light crosstalk when the blue light Micro-LED excites the quantum dots is solved. Preferably, the partition walls 24 are black photoresist.
S2: the quantum dot color conversion layer 10 is bonded upside down on the monochrome Micro-LED array 20 such that the red, green and blank dots in each quantum dot repeating unit are disposed respectively corresponding to the Micro-LED chips 22.
Specifically, the red quantum dots can release red fluorescence under the excitation of blue light, the green quantum dots can release green fluorescence under the excitation of blue light, and since the light emitted by the monochromatic Micro-LED array 20 is blue light, after the quantum dot color conversion layer 10 is inversely combined to the monochromatic Micro-LED array 20, the Micro-LED chip 22 at the position corresponding to the red quantum dots, the Micro-LED chip 22 at the position corresponding to the green quantum dots, and the Micro-LED chip 22 at the position corresponding to the blank dots form a light-emitting pixel unit of the full-color Micro-LED100, thereby forming three primary colors.
The full-color Micro-LED100 provided by the application is formed by inversely adhering the quantum dot color conversion layer 10 to the upper part of the monochromatic Micro-LED array 20, and the quantum dot color conversion layer 10 and the monochromatic Micro-LED array 20 are manufactured respectively, so that the process is simple.
Preferably, referring to fig. 2, 4 and 5, the side of the partition wall 24 bonded to the adhesion promoter layer 2 is a rough surface 25.
Specifically, the isolation wall 24 is made of black photoresist, the rough surface 25 is arranged on the surface, bonded with the tackifier layer 2, of the isolation wall 24, friction force between the isolation wall 24 and the tackifier layer 2 can be increased, connection strength between the quantum dot color conversion layer 10 and the monochromatic Micro-LED array 20 is increased, and reliability of the full-color Micro-LED is improved.
Preferably, when the partition wall 24 is a black photoresist, the preparation method of the rough surface 25 includes: .
Preparing a coarsening mask corresponding to the position of the isolation wall;
partially exposing the black photoresist to form a separation wall by coarsening the mask plate;
cleaning the black photoresist of the exposed part;
and leaving the roughened isolation wall to form the isolation wall with the rough surface.
Preferably, referring to fig. 4, the height of the isolation wall 24 is greater than the sum of the thickness of the Micro-LED chip 22 and the thickness of the quantum dot.
Specifically, by the arrangement, the quantum dots are not directly contacted with the quantum hydrazine active layer of the Micro-LED chip 22 and the P-GaN layer, the influence of the temperature rise of the P-GaN layer on the performance of the quantum dots is avoided, the service life of the device is prolonged, and the influence of the quantum dots on the performance of the quantum hydrazine active layer is avoided.
The application also provides a full-color Micro-LED prepared by the preparation method of the full-color Micro-LED.
Referring to fig. 4, the quantum dot adhesion of the quantum dot conversion layer 10 of the full-color Micro-LED100 prepared by the preparation method of the full-color Micro-LED is strong, the connection with the monochromatic Micro-LED array 20 is stable, and the reliability of the device is high.
The application also provides a display device which comprises the full-color Micro-LED.
The display device may be, for example, a display screen applied to an electronic apparatus. The electronic device may include: any equipment with a display screen, such as a smart phone, a smart watch, a notebook computer, a tablet computer, a vehicle event data recorder, a navigator and the like.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Moreover, those skilled in the art will appreciate that while some embodiments herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the application and form different embodiments. For example, in the claims above, any of the claimed embodiments may be used in any combination. The information disclosed in this background section is only for enhancement of understanding of the general background of the application and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Claims (12)
1. A preparation method of a full-color Micro-LED is characterized by comprising the following steps:
providing a single-color Micro-LED array, wherein the single-color Micro-LED array comprises a plurality of Micro-LED chips, and a separation wall is arranged among the plurality of Micro-LED chips so that the plurality of Micro-LED chips are independent;
preparing a quantum dot color conversion layer, wherein the preparation process of the quantum dot color conversion layer comprises the following steps:
preparing an adhesion promoter layer on a transparent substrate;
preparing red quantum dots and green quantum dots which are regularly distributed on the tackifier layer to form a plurality of quantum dot repeating units, wherein each quantum dot repeating unit comprises a red quantum dot, a green quantum dot and a blank dot to obtain the quantum dot color conversion layer;
and inversely bonding the quantum dot color conversion layer on the single-color Micro-LED array so that the red quantum dots, the green quantum dots and the blank dots in each quantum dot repeating unit are respectively arranged towards the Micro-LED chip correspondingly.
2. The method according to claim 1, further comprising, before preparing the adhesion promoter layer on the transparent substrate:
plating a color filter film on the transparent substrate;
and carrying out partition etching on the color filter film to form the color filter film in regular arrangement, so that the red quantum dots and the green quantum dots are prepared on the color filter film in regular arrangement.
3. The method according to claim 1, wherein the preparing an adhesion promoter layer on a transparent substrate comprises:
spin-coating a tackifier on the surface of the transparent substrate at a rotating speed of 800-1200 r/min for 20-40 s to obtain the transparent substrate coated with the tackifier;
and heating and curing the transparent substrate coated with the tackifier in a vacuum oven to obtain the tackifier layer.
4. The preparation method according to claim 3, wherein the step of heating and curing the transparent substrate coated with the adhesion promoter in a vacuum oven to obtain the adhesion promoter layer comprises the following steps:
placing the transparent substrate coated with the tackifier in a vacuum oven for 5-20 min;
and heating the vacuum oven to 100-140 ℃, and heating for 1-3 h to cure the tackifier to obtain the tackifier layer.
5. The preparation method according to claim 1, wherein the preparing of the regularly arranged red quantum dots and green quantum dots on the adhesion promoter layer comprises:
pressing different quantum dot solutions onto the tackifier layer at a set speed by using an ink-jet printing device through a spray head to obtain the red quantum dots and the green quantum dots which are regularly arranged;
the ink jet printing apparatus contains a jet alignment system and a quantum dot solution loading system.
6. The preparation method according to claim 5, further comprising, after pressing different quantum dot solutions onto the adhesion promoter layer at a set speed through a nozzle using an inkjet printing apparatus:
and drying or vacuumizing the printed quantum dot solution at low temperature to evaporate a benign solvent in the quantum dot solution to obtain pixel-level red quantum dots and green quantum dots.
7. The production method according to any one of claims 1 to 6, wherein the transparent substrate is glass, acryl plate, or quartz.
8. A method of manufacturing according to claim 1, wherein the method of manufacturing a monochrome Micro-LED array comprises:
etching the LED epitaxial wafer to form a plurality of table tops exposing part of the first semiconductor layer to obtain a P-type semiconductor table top array;
depositing a current spreading layer on the mesa;
depositing a metal layer on the current diffusion layer and the first semiconductor layer to form an electrode structure;
depositing a passivation layer on the metal layer, and etching the passivation layer to etch an electrode contact hole;
depositing a contact pad at the electrode contact hole to form an array comprising a plurality of Micro-LED chips;
and arranging a separation wall between the plurality of Micro-LED chips to obtain the monochromatic Micro-LED array.
9. The method for preparing the adhesive of the invention according to claim 1, wherein the surface of the partition wall to which the adhesive layer is adhered is a rough surface.
10. The method as claimed in claim 9, wherein the partition wall is a black photoresist, and the rough surface is prepared by:
preparing a coarsening mask corresponding to the position of the isolation wall;
partially exposing the isolation wall through the coarsening mask plate;
and cleaning the exposed black photoresist to form the isolation wall with a rough surface.
11. A full-color Micro-LED, characterized by being prepared by the method of any one of claims 1 to 10.
12. A display device comprising the full-color Micro-LED according to claim 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111652382.2A CN114300589B (en) | 2021-12-30 | 2021-12-30 | Full-color Micro-LED, preparation method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111652382.2A CN114300589B (en) | 2021-12-30 | 2021-12-30 | Full-color Micro-LED, preparation method thereof and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114300589A true CN114300589A (en) | 2022-04-08 |
| CN114300589B CN114300589B (en) | 2023-10-13 |
Family
ID=80972722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111652382.2A Active CN114300589B (en) | 2021-12-30 | 2021-12-30 | Full-color Micro-LED, preparation method thereof and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114300589B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114927600A (en) * | 2022-05-25 | 2022-08-19 | 厦门大学 | Micro LED full-color display device based on micro-fluidic technology and preparation method |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898628A (en) * | 2017-04-28 | 2017-06-27 | 深圳市华星光电技术有限公司 | Led display panel |
| CN108987613A (en) * | 2018-07-06 | 2018-12-11 | 致晶科技（北京）有限公司 | The preparation method of perovskite quantum dot array |
| CN110620127A (en) * | 2018-06-19 | 2019-12-27 | 青岛海信电器股份有限公司 | Display device and manufacturing method of monochromatic micro light-emitting diode |
| US20200411717A1 (en) * | 2019-06-27 | 2020-12-31 | Intel Corporation | Micro light-emitting diode displays having color correction films applied thereto |
| CN113178513A (en) * | 2021-04-29 | 2021-07-27 | 上海天马微电子有限公司 | Light-emitting device, display panel and display device |
| CN113488496A (en) * | 2021-06-17 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate, preparation method thereof and display device |
| CN113492607A (en) * | 2020-04-08 | 2021-10-12 | 陈学仕 | Manufacturing method of inkjet printing packaging type quantum dot, light conversion unit and display panel |
| CN113725249A (en) * | 2021-08-30 | 2021-11-30 | 京东方科技集团股份有限公司 | Chip structure, manufacturing method and display device |
| US20210384171A1 (en) * | 2020-11-30 | 2021-12-09 | Hubei Yangtze Industrial Innovation Center of Advanced Display Co., Ltd. | Display panel and display device |
-
2021
- 2021-12-30 CN CN202111652382.2A patent/CN114300589B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898628A (en) * | 2017-04-28 | 2017-06-27 | 深圳市华星光电技术有限公司 | Led display panel |
| CN110620127A (en) * | 2018-06-19 | 2019-12-27 | 青岛海信电器股份有限公司 | Display device and manufacturing method of monochromatic micro light-emitting diode |
| CN108987613A (en) * | 2018-07-06 | 2018-12-11 | 致晶科技（北京）有限公司 | The preparation method of perovskite quantum dot array |
| US20200411717A1 (en) * | 2019-06-27 | 2020-12-31 | Intel Corporation | Micro light-emitting diode displays having color correction films applied thereto |
| CN113492607A (en) * | 2020-04-08 | 2021-10-12 | 陈学仕 | Manufacturing method of inkjet printing packaging type quantum dot, light conversion unit and display panel |
| US20210384171A1 (en) * | 2020-11-30 | 2021-12-09 | Hubei Yangtze Industrial Innovation Center of Advanced Display Co., Ltd. | Display panel and display device |
| CN113178513A (en) * | 2021-04-29 | 2021-07-27 | 上海天马微电子有限公司 | Light-emitting device, display panel and display device |
| CN113488496A (en) * | 2021-06-17 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate, preparation method thereof and display device |
| CN113725249A (en) * | 2021-08-30 | 2021-11-30 | 京东方科技集团股份有限公司 | Chip structure, manufacturing method and display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114927600A (en) * | 2022-05-25 | 2022-08-19 | 厦门大学 | Micro LED full-color display device based on micro-fluidic technology and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114300589B (en) | 2023-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11967586B2 (en) | Micro LED based display panel | |
| CN114300602B (en) | Full-color Micro-LED, preparation method thereof and display device | |
| CN108615740B (en) | Flexible active color semiconductor light-emitting display module and flexible display screen | |
| US11721786B2 (en) | Micro light-emitting diode displays having color correction films applied thereto | |
| US20200411491A1 (en) | Micro light-emitting diode displays having microgrooves or wells | |
| CN109216590B (en) | Preparation method of flexible color micro-LED display device | |
| US11610874B2 (en) | Micro light-emitting diode displays having hybrid inorganic-organic pixel structures | |
| US9627437B1 (en) | Patterned phosphors in through hole via (THV) glass | |
| CN110911537B (en) | Common cathode LED chip and manufacturing method thereof | |
| US11515297B2 (en) | Micro light-emitting diode displays having colloidal or graded index quantum dot films | |
| KR101965157B1 (en) | Quantum dot hybrid organic light emitting display device and method for manufacturing the same | |
| CN110993647B (en) | Method for manufacturing active matrix display device | |
| US11901493B2 (en) | Semiconductor devices incorporating quantum dots | |
| CN111508989A (en) | Display substrate and preparation method thereof, display panel and preparation method thereof | |
| CN114256391A (en) | Manufacturing method of display substrate, display substrate and display device | |
| CN114300589B (en) | Full-color Micro-LED, preparation method thereof and display device | |
| CN111129062B (en) | LED display module, LED display screen and manufacturing method | |
| CN114335264A (en) | Full-color Micro-LED, preparation method thereof and display device | |
| CN114759057A (en) | Micro LED display chip preparation method and Micro LED display chip | |
| WO2021148895A1 (en) | Light processing device array and method for manufacturing thereof | |
| CN114551495A (en) | Display device and method of manufacturing the same | |
| JP2023531541A (en) | light emitting array | |
| CN101750637A (en) | Optical film | |
| CN113270441B (en) | LED chip structure, preparation method thereof, display module and electronic equipment | |
| TWI818437B (en) | Pixel package, method for forming the same, and display device using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |