CN114293151B - Semiconductor laser preparation method and coating device - Google Patents
Semiconductor laser preparation method and coating device Download PDFInfo
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- CN114293151B CN114293151B CN202111528859.6A CN202111528859A CN114293151B CN 114293151 B CN114293151 B CN 114293151B CN 202111528859 A CN202111528859 A CN 202111528859A CN 114293151 B CN114293151 B CN 114293151B
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- 238000000576 coating method Methods 0.000 title claims abstract description 31
- 239000011248 coating agent Substances 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000001704 evaporation Methods 0.000 claims abstract description 200
- 230000008020 evaporation Effects 0.000 claims abstract description 200
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 32
- 229910052742 iron Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 230000001965 increasing effect Effects 0.000 description 8
- 239000007888 film coating Substances 0.000 description 5
- 238000009501 film coating Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 210000001503 joint Anatomy 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model relates to the technical field of semiconductor lasers, in particular to a semiconductor laser preparation method and a coating device, and mainly relates to a semiconductor laser preparation method, which comprises the following steps: s1: preparing a mother board to form a plurality of substrates; s2: providing an epitaxial wafer, and fixedly attaching the epitaxial wafer to a plurality of substrates; s3: separating the epitaxial wafer through gaps between the substrates to form a plurality of laser chips; s4: and (3) coating, namely independently coating each laser chip, heating the quantitative evaporation source, and continuing until the quantitative evaporation source is completely lost. The utility model has the following effects: the quantitative evaporation source is used for coating a film corresponding to a single laser chip, and the evaporation source is heated for a long time, so that good uniformity of coating can be maintained, and the product quality can be improved.
Description
Technical Field
The utility model relates to the technical field of semiconductor lasers, in particular to a semiconductor laser preparation method and a coating device.
Background
The semiconductor laser device adopts the working principle that semiconductor substances are utilized to make transition luminescence between energy bands, and two parallel reflecting mirror surfaces are formed by cleavage surfaces of semiconductor crystals to be used as reflecting mirrors to form a resonant cavity, so that light oscillation, feedback and radiation amplification of generated light are realized, and laser is output. In the preparation process, the chip is firstly cleaved into bars to form a resonant cavity, but the light-emitting efficiency is low, and a reflecting film and an antireflection film are required to be respectively evaporated on two sides of the cavity surface so as to improve the light-emitting efficiency.
The general film plating method adopts an evaporation film plating method, namely a method of heating raw materials to be formed into a film in an evaporation container in a vacuum chamber to enable atoms or molecules of the raw materials to be gasified and escape from the surface to form vapor flow, and the vapor flow is incident on the surface of a solid (called a substrate or a substrate) to be condensed to form a solid film. The vacuum evaporation coating device disclosed in the utility model similar to the publication No. CN208440688U is generally used in the coating process, and comprises an evaporation chamber, a chamber bracket for supporting the evaporation chamber, and a driving device for driving an evaporation source into and out of the evaporation chamber. The evaporation source can conveniently enter and exit the evaporation chamber through the driving equipment.
The thickness of the film will affect the light transmission, when the film plating process is performed by the above equipment, more raw materials will be added into the evaporation source to perform film plating, and the heating time will generally be increased during the film plating process, so as to obtain sufficient vapor flow, improve the integrity of the film plating, and cause more thickness differences and poor quality of the final film plating of each laser.
Disclosure of Invention
In order to quantitatively perform film coating, improve the uniformity of film coating on a product and improve the quality of the product, the utility model provides a semiconductor laser preparation method and a film coating device.
In a first aspect, the present utility model provides a method for preparing a semiconductor laser, which adopts the following technical scheme: a method of fabricating a semiconductor laser, comprising the steps of:
s1: preparing a mother board to form a plurality of substrates;
s2: providing an epitaxial wafer, and fixedly attaching the epitaxial wafer to a plurality of substrates;
s3: separating the epitaxial wafer through gaps between the substrates to form a plurality of laser chips;
s4: and (3) coating, namely independently coating each laser chip, heating the quantitative evaporation source, and continuing until the quantitative evaporation source is completely lost.
Through adopting above-mentioned technical scheme, correspond a single laser chip through quantitative evaporation source and carry out the coating film operation, carry out longer heating to the evaporation source, for example heating time theoretical value prolongs ten seconds, can carry out longer heating to the evaporation source like this, ensure to form quantitative vapor flow to provide laser chip, after the coating film is accomplished at every turn like this, compare with current mode, can keep better coating film uniformity degree, just can improve product quality.
Preferably, in step S4, the film is coated by a film coating apparatus, where the film coating apparatus includes an evaporation chamber and at least two evaporation chambers, and the evaporation chambers are used for supplying the evaporation chamber, and one evaporation chamber is heated at a time until all evaporation sources in the evaporation chambers are lost.
By adopting the technical scheme, quantitative raw material adding is carried out through the evaporation bin, and the evaporation bin is heated during heating, so that only a single evaporation bin can be heated, and the required raw material is converted into vapor flow as much as possible.
Preferably, in the step S4, when one of the evaporation bins is heated, the other evaporation bins are all increased.
Through adopting above-mentioned technical scheme, when carrying out independent heating, can increase the material to other evaporation bins, just so can improve the efficiency of processing, also can adjust the material that increases according to subsequent technology, go on in step.
Preferably, in the step S4, the capacity of the evaporation bin may be adjusted according to the thickness of the coating film.
By adopting the technical scheme, the capacity of the evaporation bin is adjusted according to the requirements of the subsequent laser chips; each heating amount is adjusted according to the amount of the evaporation source, and when the evaporation source is placed in an excessively large capacity, part of the heating amount is wastefully heated, and the uniformity of the vapor flow is affected.
In a second aspect, the present utility model provides a film plating apparatus, which adopts the following technical scheme: the coating device comprises an evaporation chamber, wherein one side of the evaporation chamber is provided with an opening, an evaporation block is rotationally connected to the opening of the evaporation chamber, the lower side of the evaporation chamber is kept in a closed state in the rotation process of the evaporation block, and at least two evaporation bins are arranged on the evaporation block;
the evaporation chamber is divided into an evaporation area and a material adding area, when the evaporation bin moves to the evaporation area, the evaporation bin is heated, and when the evaporation bin moves to the material adding area, material adding is performed.
Through adopting above-mentioned technical scheme, when heating, will heat the evaporation storehouse that is located the evaporation zone alone, in being located the district department of adding material, can increase the material, for subsequent heating treatment, the mode of conversion both simultaneously is through making the evaporation piece rotate, can keep evaporation chamber open side keep can seal at the in-process of motion.
Preferably, the side wall of the evaporation chamber is recessed inwards to form a material increasing recess corresponding to the material increasing region.
Through adopting above-mentioned technical scheme, when evaporation storehouse motion to increase material concave part, can carry out the feeding, and the conversion of itself still switches through rotating evaporation piece, can not influence other evaporation storehouse.
Preferably, the evaporation bin is arranged on the evaporation block, the extension direction of the evaporation bin is parallel to the central axis of the evaporation chamber, and a heat insulation cavity is arranged on the evaporation block and between the adjacent evaporation bins;
the evaporation bin penetrates through two sides of the evaporation block, and the evaporation bin is slidably connected with a bin bottom so as to adjust the capacity of the evaporation bin.
Through adopting above-mentioned technical scheme, when the evaporation storehouse that is located in the evaporation zone alone heats, can not exert an influence to other evaporation cabins, and the heating capacity at every turn just can act on single evaporation storehouse like this, after adjusting the capacity, can make the capacity in the evaporation storehouse of heating capacity at every turn can be adapted to.
Preferably, the evaporation bin comprises an evaporation block, an evaporation mechanism and an adjusting mechanism, wherein the evaporation mechanism is used for adjusting the bottom of the evaporation bin, the evaporation mechanism comprises an extension pipe which is arranged on the evaporation block and is coaxial with the evaporation bin, an adjusting block which is connected with the inner wall of the extension pipe in a threaded manner, and a driving piece which is connected with the adjusting block, and the adjusting block is connected with the bottom of the evaporation bin.
Through adopting above-mentioned technical scheme, when needs adjust the capacity, the driving piece makes the regulating block drive the storehouse end and rotates, in the pivoted, will make the regulating block move in the extension pipe through screw-thread fit, adjusts the position at the storehouse end then.
Preferably, the driving piece comprises a lifting table and a driving motor arranged on the lifting table, and an output shaft of the driving motor is connected with the adjusting block through a linkage structure;
when the evaporation bin is located in the material adding area, the lifting platform drives the driving motor to approach the adjusting block, and circumferential fixation is achieved through the linkage structure.
Through adopting above-mentioned technical scheme, when needs are adjusted, make driving motor wholly be close to for the regulating block in the evaporation zone through the elevating platform, owing to be close from vertical direction, no matter how the horizontal height at the bottom of the storehouse can all be adjusted like this, after being close to, through linkage structure circumference fixed connection in the regulating block to can the storehouse at the bottom of the storehouse remove in the evaporation storehouse under driving motor's drive.
Preferably, the linkage structure comprises a linkage block arranged on the adjusting block, and a connecting block arranged on the output shaft of the driving motor and used for being in butt joint with the linkage block, wherein one side, close to the connecting block, of the linkage block is eccentrically provided with at least two iron blocks, the connecting block is provided with caulking grooves in one-to-one correspondence with a plurality of iron blocks, and the bottom of each caulking groove is provided with an electromagnet used for attracting the corresponding iron block.
Through adopting above-mentioned technical scheme, in the in-process that is close to, the iron plate will imbed in the caulking groove, and the electro-magnet will be better realization guiding action for both dock, then realize the function of adjusting through driving motor's rotation, and after realizing docking, the elevating platform will keep former height.
In summary, the present utility model includes at least one of the following beneficial technical effects:
1. in the process of coating, the quantitative evaporation source is completely heated and evaporated, so that the steam flow of each time is certain, the film thickness finally covered on the semi-finished product can be basically certain, and the aim of improving the product quality is fulfilled;
2. the capacity in the evaporation bin can be adjusted according to the increased evaporation source amount, so that the heating amount can be uniformly utilized to heat during evaporation, and the evaporation effect is uniform.
Drawings
FIG. 1 is a schematic structural view of a coating device;
FIG. 2 is a schematic view of a coating apparatus from another perspective;
FIG. 3 is a cross-sectional view of an evaporation block;
FIG. 4 is a bottom view of the vaporization chamber;
FIG. 5 is a partial cross-sectional view of the coating device;
FIG. 6 is a partial cross-sectional view of the linkage block and the connection block when connected;
FIG. 7 is a schematic view of a partial explosion of a coating apparatus.
Reference numerals illustrate: 100. an evaporation chamber; 110. an evaporation block; 111. a rotating motor; 120. an evaporation bin; 121. a coupling hole; 130. a material increasing depression; 140. an evaporation zone; 150. a material adding area; 160. a heat insulating chamber; 200. a bin bottom; 300. an adjusting mechanism; 310. an extension tube; 320. an adjusting block; 321. a receiving groove; 322. a limiting block; 323. a ring groove; 324. a clamping groove; 330. a driving member; 331. a lifting table; 332. a driving motor; 333. a lifting cylinder; 334. a limit rod; 335. a limiting piece; 336. a back pressure spring; 340. a linkage structure; 341. a linkage block; 342. a connecting block; 343. iron blocks; 344. a caulking groove; 345. an electromagnet; 346. and (5) giving way.
Detailed Description
The present utility model will be described in further detail with reference to the accompanying drawings.
The embodiment of the utility model discloses a coating device.
Referring to fig. 1 and 2, the film plating device comprises an evaporation chamber 100, wherein the evaporation chamber 100 is cylindrical, one side of the evaporation chamber 100 is provided with an opening, an evaporation block 110 is rotatably connected to the opening of the evaporation chamber 100, the evaporation block 110 seals the opening of the evaporation chamber 100, the evaporation block 110 is a cake which is adapted to the evaporation chamber 100, central axes of the evaporation block 110 and the evaporation chamber 100 coincide, and simultaneously, the lower side of the evaporation chamber 100 is kept sealed in the rotation process of the evaporation block 110. The rotation of the evaporation block 110 is driven by a rotation motor 111, an output shaft of the rotation motor 111 is connected at the center of the evaporation block 110, and the output shaft of the rotation motor 111 is parallel to the central axis of the evaporation block 110.
Referring to fig. 3, the evaporation block 110 is provided with at least two evaporation bins 120, in this embodiment, two evaporation bins 120 are provided and are oppositely disposed on the evaporation block 110, and the evaporation bins 120 penetrate through two sides of the evaporation block 110 along an axis. The center points of the two evaporation bins 120 are located on the same diameter and have the same distance from the center of the evaporation block 110. The evaporation block 110 is provided with a heat insulation cavity 160 between the adjacent evaporation bins 120, the heat insulation cavity 160 is integrally formed on the evaporation block 110, and the extending direction of the heat insulation cavity 160 is along the diameter direction and is perpendicular to the connecting line of the central points of the two evaporation bins 120.
Referring to fig. 1 and 4, in this embodiment, the side wall of the evaporation chamber 100 is recessed inwards to form a material increasing recess 130, and in this embodiment, the cross-sectional area of the material increasing recess 130 is equal to one quarter of the cross-section of the evaporation chamber 100. The projection of the evaporation chamber 100 along the direction of the central axis may be divided into an evaporation area 140 and a material adding area 150, wherein the solid portion of the evaporation chamber 100 after removing the material adding recess 130 is three-quarters circle, the portion is the evaporation area 140, the portion corresponding to the material adding recess 130 is the material adding area 150, and the projection of the evaporation block 110 along the direction of the central axis always keeps the area of the quarter circle exposed during the rotation process, that is, the material adding area 150 is exposed.
When the evaporation bin 120 moves to the evaporation area 140, the corresponding evaporation bin 120 is heated, in this embodiment, the external heat source contacts with the evaporation block 110, and the evaporation bin 120 on the other side has little effect due to the heat insulation cavity 160, and when the evaporation bin 120 moves to the material adding area 150, the material adding operation will be performed through the material adding recess 130.
Referring to fig. 5, a cartridge bottom 200 is slidably coupled to the evaporation cartridge 120, and when the cartridge bottom 200 slides in the axial direction, the capacity of the evaporation cartridge 120 is adjusted because when the amount of the evaporation source is small, the corresponding reduction of the capacity facilitates release of the evaporation source, and the influence of the inner wall of the evaporation cartridge 120 can be reduced.
In order to achieve the purpose of adjusting the position of the bin bottom 200, the coating device further comprises an adjusting mechanism 300, wherein the adjusting mechanism 300 comprises an extension pipe 310 integrally arranged on the evaporation block 110, an adjusting block 320 in threaded connection with the inner wall of the extension pipe 310, and a driving piece 330 connected with the adjusting block 320, the extension pipe 310 is coaxial with the evaporation bin 120, the adjusting block 320 is integrally connected with the bin bottom 200, but the movement range of the adjusting block 320 is limited in the extension pipe 310, and the inner wall of the evaporation bin 120 is kept flat.
Referring to fig. 2 and 6, the driving member 330 in this embodiment includes a lifting table 331 and a driving motor 332, the lifting table 331 is lifted by a lifting cylinder 333, and the driving motor 332 is fixedly installed on the lifting table 331, so that an output shaft of the driving motor 332 is vertically disposed. The output shaft of the driving motor 332 is connected with the adjusting block 320 through a linkage structure 340.
When one of the evaporation bins 120 is located in the material adding area 150 after the evaporation block 110 rotates, the lifting platform 331 drives the driving motor 332 to approach the adjusting block 320 to achieve circumferential fixation of the two through the linkage structure 340. The linkage structure 340 includes a linkage block 341 disposed on the adjusting block 320, a connection block 342 disposed on an output shaft of the driving motor 332 and used for being in butt joint with the linkage block 341, at least two iron blocks 343 are eccentrically disposed on one side of the linkage block 341 close to the connection block 342, in this embodiment, two iron blocks 343 are disposed, the linkage block 341 is made of plastic material, and the iron blocks 343 are adhered and fixed on the linkage block 341. Meanwhile, the connecting block 342 is provided with caulking grooves 344 which are in one-to-one correspondence with a plurality of iron blocks 343, and the bottom of the caulking groove 344 is provided with an electromagnet 345 for attracting the iron blocks 343.
Referring to fig. 6 and 7, the end of the adjusting block 320 is provided with a holding groove 321 in which the linkage block 341 is embedded, two limiting blocks 322 are symmetrically arranged on the outer wall of the linkage block 341, the inner wall of the holding groove 321 is provided with a limiting groove in which the limiting blocks 322 are embedded and slide, the limiting groove comprises a ring groove 323 and a plurality of clamping grooves 324 communicated with the ring groove 323, the clamping grooves 324 are axially formed, a plurality of clamping grooves 324 are uniformly distributed along the circumferential direction, one end of each clamping groove 324 is communicated with the ring groove 323, the joint of the inner wall of each clamping groove 324 and the ring groove 323 is provided with a round corner, and one end of each clamping groove 324 far away from the ring groove 323 is provided with an opening. The tank bottom of the accommodating groove 321 is provided with a limiting rod 334 penetrating through the linkage block 341, one end, far away from the linkage block 341, of the limiting rod 334 is provided with a limiting sheet 335, meanwhile, the limiting rod 334 is sleeved with a back pressure spring 336, two ends of the back pressure spring 336 are respectively abutted to the limiting sheet 335 and the linkage block 341, and the back pressure spring 336 is kept in a compressed state, so that the linkage block 341 can be kept to have a trend of being embedded into the accommodating groove 321. The side surface of the connection block 342 is provided with a relief groove 346 into which the limit plate 335 and the return spring 336 are fitted.
The implementation principle of the embodiment of the utility model is as follows: the lifting cylinder 333 makes the connection block 342 close to the linkage block 341, in this embodiment, a distance sensor may be disposed between the connection block 342 and the linkage block 341, for detecting a distance between the connection block 342 and the linkage block 341, assuming that a preset value in this embodiment is amm, when the preset value reaches the preset value, the lifting cylinder 333 stops acting, the electromagnet 345 is electrified, at this time, if the iron block 343 does not correspond to the caulking groove 344, the iron block 343 will be attracted so as to make the linkage block 341 rotate, the limiting block 322 will move in the annular groove 323, under the action of attraction force, the limiting block 322 also moves a distance towards the connection block 342, the iron block 343 is embedded into the caulking groove 344, so as to realize circumferential fixation, and at this time, the limiting block 322 is located at the middle position of the clamping groove 324.
Through the positive and negative rotation of driving motor 332, can drive linkage piece 341 and carry out circumferential direction and rotate, stopper 322 can drive regulating block 320 and also rotate this moment to drive the storehouse bottom 200 and move, stopper 322 will slide in joint groove 324 simultaneously, but the adjustment volume at every turn only can be limited to the distance of a/2, and the rotation angle of driving motor 332 at every turn is limited, in order to prevent stopper 322 break away from joint groove 324. After the adjustment is completed, the electromagnet 345 is powered off, and the linkage block 341 is embedded into the accommodating groove 321 under the action of the back pressure spring 336.
According to the coating device, the embodiment of the utility model also discloses a preparation method of the semiconductor laser, which comprises the following steps:
s1: preparing the mother board to form a plurality of substrates, wherein the preparation mode in the embodiment is cutting, and the cutting process can be through photoetching, laser, splitting saw, water jet knife and other processes, preferably, the sizes of the plurality of substrates are consistent;
s2: providing an epitaxial wafer, and fixedly attaching the epitaxial wafer to a plurality of substrates, wherein the linear thermal expansion coefficient of the substrates is good in matching with the linear thermal expansion coefficient of epitaxial wafer materials, and the mode of fixedly attaching in the embodiment is adhesion;
s3: separating the epitaxial wafer through gaps between the substrates to form a plurality of laser chips with cleavage surfaces;
s4: and (3) coating, namely independently coating each laser chip, heating the quantitative evaporation source, and continuing until the quantitative evaporation source is completely lost.
In the step S4, the evaporation source is added to the evaporation bins 120 by the above-mentioned film plating device, the vapor stream is supplied to the evaporation chambers 100 after heating, one evaporation bin 120 is heated once until all the evaporation sources in the evaporation bin 120 are lost, and when one evaporation bin 120 is heated, the other evaporation bins 120 are added, so as to improve the production efficiency.
And the adjustable capacity of the evaporation bin 120 is adjusted according to different requirements. When the evaporation bin 120 moves to the material adding area 150, the driving motor 332 is close to the linkage block 341 through the lifting table 331, when the evaporation bin moves to a preset value, the electromagnet 345 is electrified, so that the iron block 343 is embedded into the caulking groove 344, then the driving motor 332 works, the linkage block 341 drives the adjusting block 320 to rotate, the position of the bin bottom 200 can be adjusted, and the adjustment of the capacity of the evaporation bin 120 is realized.
The embodiments of the present utility model are all preferred embodiments of the present utility model, and are not intended to limit the scope of the present utility model in this way, therefore: all equivalent changes in structure, shape and principle of the utility model should be covered in the scope of protection of the utility model.
Claims (5)
1. A preparation method of a semiconductor laser is characterized in that: the method comprises the following steps:
s1: preparing a mother board to form a plurality of substrates;
s2: providing an epitaxial wafer, and fixedly attaching the epitaxial wafer to a plurality of substrates;
s3: separating the epitaxial wafer through gaps between the substrates to form a plurality of laser chips;
s4: coating, namely coating each laser chip individually, heating a quantitative evaporation source, and continuing until the quantitative evaporation source is completely lost;
in the step S4, a film is formed by a film forming device, the film forming device includes an evaporation chamber (100) and at least two evaporation bins (120), the evaporation bins (120) are used for supplying the evaporation chamber (100), and one evaporation bin (120) is heated once until evaporation sources in the evaporation bin (120) are all lost;
the device comprises an evaporation chamber (100), wherein one side of the evaporation chamber (100) is provided with an opening, an evaporation block (110) is rotationally connected to the opening of the evaporation chamber (100), the lower side of the evaporation chamber (100) is kept in a closed state in the rotation process of the evaporation block (110), and at least two evaporation bins (120) are arranged on the evaporation block (110);
the evaporation chamber (100) is divided into an evaporation area (140) and a material adding area (150), when the evaporation bin (120) moves to the evaporation area (140), the evaporation bin (120) is heated, and when the evaporation bin (120) moves to the material adding area (150), material adding is performed;
the evaporation bin (120) penetrates through two sides of the evaporation block (110), and a bin bottom (200) is slidably connected in the evaporation bin (120) so as to adjust the capacity of the evaporation bin (120);
the evaporation bin comprises a bin bottom (200), and is characterized by further comprising an adjusting mechanism (300) for adjusting the bin bottom (200), wherein the adjusting mechanism (300) comprises an extension pipe (310) which is arranged on the evaporation block (110) and is coaxial with the evaporation bin (120), an adjusting block (320) which is connected with the inner wall of the extension pipe (310) in a threaded manner, and a driving piece (330) which is connected with the adjusting block (320), and the adjusting block (320) is connected with the bin bottom (200);
the driving piece (330) comprises a lifting table (331) and a driving motor (332) arranged on the lifting table (331), and an output shaft of the driving motor (332) is connected with the adjusting block (320) through a linkage structure (340);
when the evaporation bin (120) is positioned in the material adding area (150), the lifting platform (331) drives the driving motor (332) to be close to the adjusting block (320) to realize circumferential fixation through the linkage structure (340);
the linkage structure (340) is including setting up linkage piece (341) on regulating block (320), setting up on driving motor (332) output shaft and be used for connecting block (342) with linkage piece (341), one side that linkage piece (341) is close to connecting block (342) is provided with not less than two iron pieces (343) eccentrically, have caulking groove (344) with a plurality of iron pieces (343) one-to-one on connecting block (342), caulking groove (344) bottom have be used for with iron piece (343) attraction electro-magnet (345).
2. A method of manufacturing a semiconductor laser as claimed in claim 1, wherein: in the step S4, when one of the evaporation bins (120) is heated, the other evaporation bins (120) are all subjected to material adding.
3. A method of manufacturing a semiconductor laser as claimed in claim 1, wherein: in the step S4, the capacity of the evaporation bin (120) can be adjusted according to different coating thicknesses.
4. A coating device, characterized in that: a semiconductor laser manufacturing method as applied in claim 1, wherein the side wall of the evaporation chamber (100) is recessed inwards to form a build-up recess (130) corresponding to the build-up region (150).
5. The plating device according to claim 4, wherein: the evaporation bin (120) is arranged on the evaporation block (110), the extending direction of the evaporation bin is parallel to the central axis of the evaporation chamber (100), and a heat insulation cavity (160) is arranged on the evaporation block (110) and between the adjacent evaporation bins (120).
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| CN202111528859.6A CN114293151B (en) | 2021-12-14 | 2021-12-14 | Semiconductor laser preparation method and coating device |
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| CN114293151B true CN114293151B (en) | 2023-11-10 |
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| CN111211477A (en) * | 2018-11-21 | 2020-05-29 | 深圳市中光工业技术研究院 | Semiconductor laser and preparation method thereof |
| CN109898059A (en) * | 2019-04-15 | 2019-06-18 | 湖畔光电科技（江苏）有限公司 | A kind of novel vapor deposition crucible device |
| CN110406796A (en) * | 2019-07-18 | 2019-11-05 | 赵曼利 | It is a kind of can quantitative medical fluid bottle cap |
| CN213376470U (en) * | 2020-09-27 | 2021-06-08 | 浙江汇金涂料有限公司 | Automatic batching device for paint production |
| CN113218464A (en) * | 2021-05-27 | 2021-08-06 | 山东东泰机械制造有限公司 | Metering device with adjustable capacity and use method thereof |
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