CN114280374A - Method for testing sheet resistance of doped silicon carbide film - Google Patents
Method for testing sheet resistance of doped silicon carbide film Download PDFInfo
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- CN114280374A CN114280374A CN202111562838.6A CN202111562838A CN114280374A CN 114280374 A CN114280374 A CN 114280374A CN 202111562838 A CN202111562838 A CN 202111562838A CN 114280374 A CN114280374 A CN 114280374A
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- Prior art keywords
- silicon carbide
- electrode
- carbide film
- sheet resistance
- doped silicon
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 38
- 238000012360 testing method Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000002184 metal Substances 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 31
- 239000000523 sample Substances 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a method for testing sheet resistance of a doped silicon carbide film by preparing an electrode on the surface of the doped silicon carbide film.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for testing sheet resistance of a doped silicon carbide film by preparing an electrode on the surface of the doped silicon carbide film.
Background
The SiC crystal material has hard texture and large forbidden band width, and is not easy to form good ohmic contact with metal, and common test equipment is mainly realized by a mode that a metal probe is directly contacted with the material, so that the silicon carbide material is limited during film parameter test. According to the invention, the probe structure for the sheet resistance test is transferred to the substrate to form an ohmic contact electrode in advance, and then the probe is connected with the electrode, so that the problem of contact between a metal probe and a silicon carbide material is solved.
The invention content is as follows:
in order to solve one or more technical problems in the prior art, the invention provides a method for realizing the sheet resistance test of a doped silicon carbide film by preparing an electrode on the surface of the doped silicon carbide film, which is characterized by comprising the following steps: preparing metal electrodes on the silicon carbide film, wherein the metal electrodes comprise a first electrode P1, a second electrode P2, a third electrode P3 and a fourth electrode P4, the distance d between the metal electrode electrodes is 1mm, and ohmic contact is formed through high-temperature annealing. As shown in fig. 2, a test probe is connected to each metal electrode, a current field is formed between the first electrode P1 and the fourth electrode P4, and a potential difference between the second electrode P2 and the third electrode P3 is detected. Then, the square resistance value is calculated.
Drawings
FIG. 1 is a schematic diagram of a vertical structure for fabricating a metal electrode on a silicon carbide thin film;
the reference numbers in the figures illustrate: the silicon carbide substrate comprises a silicon carbide substrate 1, a doped silicon carbide film 2 and a metal electrode 3.
FIG. 2 is a schematic plan view of a metal electrode fabricated on a silicon carbide film; the center distance between the 4 metal electrodes P1, P2, P3, P4 is d 1 mm.
Detailed Description
The present invention will be described in further detail with reference to examples, which are illustrative of the present invention and are not to be construed as being limited thereto.
Fig. 2 is a schematic plane structure diagram of a metal electrode prepared on a silicon carbide film, ohmic contact metal is deposited on the silicon carbide film to be measured, and four circular metal electrodes with a distance of 1mm are formed by photoetching. And annealing the prepared sample at high temperature to form good ohmic contact between the metal and the SiC film.
Connecting the test probes with four metal electrodes respectively, as shown in fig. 2, applying current to the metal electrode P1 and the metal electrode P4 to form a current field on the metal film, and obtaining a potential difference between the metal electrode P2 and the metal electrode P3, thereby calculating the corresponding sheet resistance.
Fig. 1 is a structural diagram of the present invention, and the device structure mainly includes a silicon carbide substrate 1, a doped silicon carbide thin film 2, and a metal electrode 3; the silicon carbide film 2 is provided with a metal electrode 3, and the size of the electrode can be adjusted according to the test requirement; and the interface between the silicon carbide film 2 and the metal electrode 3 is annealed to form ohmic contact between the two.
The method for testing the sheet resistance of the doped silicon carbide film by preparing the electrode on the surface of the doped silicon carbide film comprises the following steps:
the method comprises the following steps: and depositing a metal film layer on the silicon carbide film to be tested, wherein the thickness of the silicon carbide film layer which can be tested by the method is 0-400 mu m.
Step two: the surface of the metal film layer forms 4 dot-shaped electrodes with the center distance of 1mm in a group through photoetching and metal etching, and the size of the electrodes can be adjusted according to the test requirement.
Step three: and annealing the sample at high temperature for 1-5 min to form ohmic contact between the metal and the surface of the silicon carbide substrate.
Step four: the test pattern formed in the above manner can be connected with any test equipment through a probe, a test current I is applied between the P1 and the P4 electrodes shown in fig. 2 to form a current field, a potential difference U between the two electrodes P2 and P3 is obtained, and Rx is U/I; substituting the following equation:
R□＝Rx·F(R/d)·F(W/d)·Fsp
thus obtaining the square resistance of the silicon carbide film.
Wherein F (R/d) is a sample diameter correction factor, which is related to the sample diameter R and the electrode spacing d, and when R → ∞ F (R/d) 4.532; f (W/d) is a sample thickness correction factor, which is related to the sample thickness W and the probe pitch d, and when W/d <0.4, F (W/d) is 1; fsp is a probe pitch correction factor that has been related to the probe pitch, in which case the electrode pitch has been determined to be 1mmm, Fsp being 1. The sheet resistance test scheme is the same as the traditional sheet resistance test method, and is based on the assumption that the ratio of the film size to the electrode spacing tends to be infinite.
While the present invention has been described with reference to several exemplary embodiments, it is understood that the terminology used is intended to be in the nature of words of description and illustration, rather than of limitation. As the present invention may be embodied in several forms without departing from the spirit or essential characteristics thereof, it should also be understood that the above-described embodiments are not limited by any of the details of the foregoing description, but rather should be construed broadly within its spirit and scope as defined in the appended claims, and therefore all changes and modifications that fall within the meets and bounds of the claims, or equivalences of such meets and bounds are therefore intended to be embraced by the appended claims.
Claims (5)
1. A method for testing sheet resistance of a doped silicon carbide film is characterized by comprising the following steps: preparing metal electrodes on the silicon carbide film, wherein the metal electrodes comprise a first electrode, a second electrode, a third electrode and a fourth electrode, the distance between the metal electrodes is 1mm, ohmic contact is formed through high-temperature annealing, a test probe is connected with each metal electrode, a current field is formed between the first electrode and the fourth electrode, the potential difference between the second electrode and the third electrode is detected, and the square resistance value is calculated.
2. The method for testing sheet resistance of a doped silicon carbide thin film as claimed in claim 1, wherein: and ohmic contact is formed between the metal electrode and the silicon carbide film through high-temperature annealing.
3. The method for testing sheet resistance of a doped silicon carbide film according to claim 1, wherein: the test probe is standard sheet resistance test equipment or a common probe test bench.
4. The method for testing sheet resistance of a doped silicon carbide film according to claim 1, wherein: the test probe is directly connected with the ohmic contact metal layer, and ohmic contact is formed between the ohmic contact metal layer and the silicon carbide film so as to ensure that a test signal is accurately received by test equipment through the probe.
5. The method for testing sheet resistance of a doped silicon carbide film according to claim 1, wherein: the film thickness is 0-400 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111562838.6A CN114280374A (en) | 2021-12-20 | 2021-12-20 | Method for testing sheet resistance of doped silicon carbide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111562838.6A CN114280374A (en) | 2021-12-20 | 2021-12-20 | Method for testing sheet resistance of doped silicon carbide film |
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| Publication Number | Publication Date |
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| CN114280374A true CN114280374A (en) | 2022-04-05 |
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| CN202111562838.6A Pending CN114280374A (en) | 2021-12-20 | 2021-12-20 | Method for testing sheet resistance of doped silicon carbide film |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101335201A (en) * | 2008-05-30 | 2008-12-31 | 西安电子科技大学 | Manufacturing method for n type SiC semiconductor device ohmic contact |
| CN101552195A (en) * | 2009-05-08 | 2009-10-07 | 中国电子科技集团公司第十三研究所 | Method for manufacturing ohmic electrode on light-doped SiC matrix used for Hall effect measurement |
| CN108735849A (en) * | 2017-04-18 | 2018-11-02 | 上海新昇半导体科技有限公司 | A kind of photoconductive switch and preparation method thereof |
| CN109786447A (en) * | 2017-11-13 | 2019-05-21 | 比亚迪股份有限公司 | A kind of p-type SiC ohmic contact material and preparation method thereof |
| US20190164850A1 (en) * | 2017-11-30 | 2019-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and testing method thereof |
| JP2020113642A (en) * | 2019-01-11 | 2020-07-27 | 株式会社Sumco | Resistivity measurement method of high-resistance material |
-
2021
- 2021-12-20 CN CN202111562838.6A patent/CN114280374A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101335201A (en) * | 2008-05-30 | 2008-12-31 | 西安电子科技大学 | Manufacturing method for n type SiC semiconductor device ohmic contact |
| CN101552195A (en) * | 2009-05-08 | 2009-10-07 | 中国电子科技集团公司第十三研究所 | Method for manufacturing ohmic electrode on light-doped SiC matrix used for Hall effect measurement |
| CN108735849A (en) * | 2017-04-18 | 2018-11-02 | 上海新昇半导体科技有限公司 | A kind of photoconductive switch and preparation method thereof |
| CN109786447A (en) * | 2017-11-13 | 2019-05-21 | 比亚迪股份有限公司 | A kind of p-type SiC ohmic contact material and preparation method thereof |
| US20190164850A1 (en) * | 2017-11-30 | 2019-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and testing method thereof |
| JP2020113642A (en) * | 2019-01-11 | 2020-07-27 | 株式会社Sumco | Resistivity measurement method of high-resistance material |
Non-Patent Citations (1)
| Title |
|---|
| 王善林 陈玉华主编: "《电子封装技术试验》", 冶金工业出版社, pages: 162 - 164 * |
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