CN114265260B - D trigger based on optical single-ring mosaic resonant cavity - Google Patents

D trigger based on optical single-ring mosaic resonant cavity Download PDF

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CN114265260B
CN114265260B CN202111633602.7A CN202111633602A CN114265260B CN 114265260 B CN114265260 B CN 114265260B CN 202111633602 A CN202111633602 A CN 202111633602A CN 114265260 B CN114265260 B CN 114265260B
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coupler
optical
optical logic
nand gate
voltage
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CN114265260A (en
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于长秋
燕玉明
王晓旭
马世昌
陈志远
金蒙豪
周铁军
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Hangzhou Dianzi University
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention provides a D trigger based on an optical single-ring embedded resonant cavity, wherein a signal output by a signal generator is sent to a voltage tuning port of a tunable laser in one path, and sent to a data acquisition and processing system in the other path. Light output by the tunable laser is transmitted into the basic single-ring mosaic resonant cavity of each logic gate through the attenuator and the polarization controller by the beam splitter. The direct current voltage source generates an input signal as a level signal of the input end of the D trigger, the pulse signal generator generates a pulse signal as time sequence control, the pulse signal is converted into a voltage signal required by a corresponding logic gate through the voltage conversion circuit, and the voltage signal is applied to a stress light modulator bonded in an arm of an interferometer forming a coupler in the single-ring embedded resonant cavity to control the coupling coefficient of the corresponding coupler, so that the D trigger of the optical single-ring embedded resonant cavity is formed, and the function of the D trigger is realized.

Description

D trigger based on optical single-ring mosaic resonant cavity
Technical Field
The invention relates to a D trigger based on an optical single-ring embedded resonant cavity, which can perform sequential logic operation of the D trigger on an electric pulse signal of an input system and belongs to the technical field of photoelectric integrated circuits.
Background
At present, we enter the age of cloud data, big data and super computer development at a high speed, which marks that we comprehensively enter the information age, and people have higher and higher requirements on the effectiveness and reliability of communication in the development process of the information society. Because electronic circuits are physically limited by quantum tunneling, large-scale electronic integrated circuits cannot continue to develop according to moore's law, and it is basically difficult to achieve higher integration, which limits the rate of electronic information processing to some extent. With the rapid development of various technologies, the amount of information to be processed has been rapidly increased, and people have higher demands for the improvement of the speed of data calculation and the reduction of power consumption. Nowadays, the disadvantages of the electronic integrated circuit solutions are gradually revealed, the contradiction between the electronic integrated circuit solutions and the high-speed requirement of information transmission is also larger and larger, and compared with the electronic circuits, the optical computing network operates at the speed of light, and the electronic integrated circuit solutions have the advantages of small device delay, high computing efficiency, low power consumption and the like, so that the development of photon computing related devices is rapid. In digital flip-flop technology, a D-type flip-flop is the simplest flip-flop that stores data at its output, and when a clock signal is triggered into a circuit, the logic state is precisely taken as its input, which makes the flip-flop a one-bit digital memory. The optical D trigger is taken as a new idea, a basic gate circuit in the D trigger is replaced by an optical switch, and the spanning from electronic communication to electro-optical communication is realized. The D trigger based on the optical single-ring mosaic resonant cavity is formed by combining basic logic gate units, the basic gate circuits in the sequential logic circuit are replaced by optical logic gates, the performance of the device is improved by utilizing the advantage of light processing information, and a stress regulation mode (namely, a stress light modulator) is adopted for changing the state of each logic gate; meanwhile, a logic gate is built by adopting the single-ring embedded resonant cavity, and compared with a double-ring logic gate structure, the logic gate structure has higher integration level. In addition, the structure can be prepared by utilizing a micro-nano processing technology, has the advantages of compatibility with a CMOS technology, small size, low energy consumption and the like, and is beneficial to improving the performance of a photon device.
Disclosure of Invention
The invention provides a D trigger based on an optical single-ring embedded resonant cavity. The device has the advantages of small volume, high integration level, low loss, low power consumption, electromagnetic interference resistance and the like. The D trigger comprises a signal generator, a tunable laser, an attenuator, a polarization controller, a beam splitter, a D trigger unit, a first photoelectric detector and a data acquisition and processing system. The D trigger unit is composed of a first direct current voltage source, a pulse signal generator, a first voltage conversion circuit, a second voltage conversion circuit, a third voltage conversion circuit, an optical logic NOT gate, a first optical logic NOT gate, a second optical logic NOT gate, a third optical logic NOT gate, a fourth optical logic NOT gate, a second photoelectric detector, a third photoelectric detector, a fourth photoelectric detector, a fifth photoelectric detector and a sixth photoelectric detector.
The optical logic gate operation structures are the same, wherein the optical logic gate operation structures comprise a first 2 multiplied by 2 coupler, a second 2 multiplied by 2 coupler, a third 2 multiplied by 2 coupler, a fourth 2 multiplied by 2 coupler and a first stress light modulator, a second stress light modulator, a third stress light modulator and a fourth stress light modulator, and the 2 multiplied by 2 couplers are connected by waveguides to form a single-ring mosaic resonant cavity. The basic structures of the four 2 multiplied by 2 couplers are Mach-Zehnder interferometers, a layer of PZT controlled by voltage is attached to one arm of each interferometer to serve as a stress light modulator, and the PZT is deformed by applying a voltage signal, so that the arm length of the arm is changed, the phase of light in a light path where the modulation is located is modulated, and the coupling coefficient of the corresponding coupler is controlled. The coupling coefficients of the first 2×2 coupler, the second 2×2 coupler, the third 2×2 coupler and the fourth 2×2 coupler are controlled by the first stress optical modulator, the second stress optical modulator, the third stress optical modulator and the fourth stress optical modulator, respectively. The difference between the optical logic gates is that the structure realizes different logic functions by changing the coupling coefficient of the stress optical modulator and the difference of the output ports by inputting different voltage signals to the stress optical modulator.
The signal generator outputs two paths of signals, one path of signals is sent to a voltage tuning port of the tunable laser and used for scanning the wavelength of the laser, and the other path of signals is sent to the data acquisition and processing system. The input signal is a level signal output by a first direct-current voltage source, the pulse level signal output by a pulse signal generator is subjected to time sequence control, one path of the level signal output by the first direct-current voltage source outputs a corresponding voltage signal through a first voltage conversion circuit and is sent to a first photoelectric logic NAND gate, and the other path of the level signal outputs a corresponding voltage signal through a third voltage conversion circuit and is input to an optical logic NAND gate; the level signal output by the pulse signal generator is output by the second voltage conversion circuit and the corresponding voltage is respectively input to the first optical logic NAND gate and the second optical logic NAND gate. The conversion circuit can firstly detect the high-low state of the level of the voltage signal in the digital circuit system and convert the high-low state into the corresponding voltage signal value.
For example, the input signal is low when it is lower than 1.35V, and is high when it is higher than 2V. When the signal passes through the first voltage conversion circuit, the signal is converted into 13V voltage when low level is input, the signal is converted into 8.3V voltage when high level is input, and the converted voltage is input to the first optical logic NAND gate; when the signal passes through the second voltage conversion circuit, the signal is converted into 4.6V voltage when the low level is input, the signal is converted into 11.1V voltage when the high level is input, and the output voltages are respectively input to the first optical logic NAND gate and the second optical logic NAND gate; when the signal passes through the third voltage conversion circuit, the input low level is converted into 2.7V, when the input high level is converted into 13V voltage, the converted voltage signal is input to the optical logic NOT gate, the result after the optical logic NOT gate operation is converted into a corresponding voltage value through the second photoelectric detector and is input to the second optical logic NOT gate, and at the moment, the first optical logic NOT gate and the second optical logic NOT gate are controlled by two groups of voltages. The two voltage signals input into the first optical logic NAND gate are sent to a third photoelectric detector after calculation, and the third photoelectric detector converts the calculation result into corresponding voltage values and sends the corresponding voltage values to the third optical logic NAND gate; the two voltage signals input into the second optical logic NAND gate are calculated and sent to a fourth photoelectric detector, and the fourth photoelectric detector converts the operation result into corresponding voltage values and sends the corresponding voltage values to the fourth optical logic NAND gate. The other voltage signals of the third optical logic NAND gate and the fourth optical logic NAND gate are respectively driven by initial voltages, the calculation result of the third optical logic NAND gate is converted into a corresponding voltage value through a fifth photoelectric detector and is input into the fourth optical logic NAND gate, similarly, the calculation result output by the fourth optical logic NAND gate is input into the third optical logic NAND gate through a sixth photoelectric detector, the result output by the third optical logic NAND gate is the operation result Q of the D trigger, and the result output by the fourth optical logic NAND gate is the operation result Q
Light passing attenuation of tunable laser outputThe laser is divided into four beams by the beam splitter, and the four beams are respectively input into the single-ring mosaic resonant cavity through the input ends of the first 2X 2 couplers of the first optical logic NAND gate, the second optical logic NAND gate, the third optical logic NAND gate, the fourth optical logic NAND gate and the optical logic NAND gate, pass through the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler in the cavity, and after multiple cycles in the cavity, the operation results of all the optical logic NAND gates and the optical logic NAND gates are respectively output by the output ends of the first 2X 2 coupler. The final operation result Q is sent to a first photoelectric detector by the output end of a first 2X 2 coupler of a third optical logic NAND gate, and the operation result is transmitted to a data acquisition and processing system through the first photoelectric detector; calculation resultThe operation result is sent to the first photoelectric detector by the output end of the first 2×2 coupler of the fourth optical logic NAND gate, and is transmitted to the data acquisition and processing system through the first photoelectric detector. The single-ring embedded resonant cavity consists of an inner ring, an outer ring and a straight waveguide. Wherein the first 2 x 2 coupler, the second 2 x 2 coupler and the fourth 2 x 2 coupler are interconnected to form an inner ring; the first 2X 2 coupler, the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler are connected to form an outer ring, and the length of the U-shaped outer ring is larger than the circumference of the inner ring.
Preferably, the tunable laser comprises an optical isolator, and the output wavelength of the optical isolator is selectable, so that data transmission is facilitated.
Preferably, the ratio of the circumferences of the inner ring and the outer ring of the resonant cavity is 1:2, and a silicon waveguide is selected.
The 2 x 2 coupler is realized by a Mach-Zehnder interferometer, and the coupling coefficient of the coupler can be adjusted by adjusting the phase of the interferometer. In the implementation process, voltage is applied to electrodes on the stress light modulator to cause the PZT in the stress light modulator to deform so as to change the phase of one arm of the interferometer, and finally the light intensity ratio of two output ports of the interferometer is changed, so that the 2X 2 coupler with adjustable coupling coefficient is obtained.
Preferably, the coupling coefficients of the first 2×2 coupler and the third 2×2 coupler in all the optical logic gates are consistent, and the coupling coefficients of the second 2×2 coupler and the fourth 2×2 coupler are consistent. The voltage signals of the stress light modulators of the corresponding first 2×2 coupler and the third 2×2 coupler are identical, and the voltage signals of the stress light modulators of the second 2×2 coupler and the fourth 2×2 coupler are also identical.
Preferably, the receiving wave band of the photoelectric detector is matched with the wave band output by the laser.
Preferably, the polarization state of the polarization controller sets the highest optical quality factor of the optical mode.
Preferably, the attenuator is kept unchanged when the system performs logic operation, the optical power is below the saturation power range of the detector when the system operates, and the power consumption of the whole system is the lowest.
The application has the substantial advantages that: the D trigger based on the optical single-ring embedded resonant cavity has the advantages of small volume, high integration level, low loss, low power consumption and electromagnetic interference resistance.
Drawings
FIG. 1 is a schematic diagram of an inventive D-flip-flop based on an optical single ring damascene resonator;
FIG. 2 is a D flip-flop cell structure;
FIG. 3 is a single-ring damascene resonator optical logic NOT structure;
FIG. 4 is a schematic diagram of a single-loop damascene resonator first optical logic NAND gate structure;
FIG. 5 is a schematic diagram of a second optical logic NAND gate structure of a single ring damascene resonator;
FIG. 6 is a third optical logic NAND gate structure of a single-ring damascene resonator;
FIG. 7 is a fourth optical logic NAND gate structure of a single-loop damascene resonator;
fig. 8 is an operational truth table for the D flip-flop.
Detailed Description
As shown in fig. 1, the optical single-ring mosaic resonator-based D flip-flop according to the present embodiment includes a signal generator 1, a tunable laser 2, an attenuator 3, a polarization controller 4, a beam splitter 5, a D flip-flop unit 6, a first photodetector 7, and a data acquisition and processing system 8. The D flip-flop unit 6 shown in fig. 2 includes a first dc voltage source 6-1, a pulse signal generator 6-2, a first voltage conversion circuit 6-3, a second voltage conversion circuit 6-4, a third voltage conversion circuit 6-5, an optical logic not gate 6-6, a second photodetector 6-7, a first optical logic not gate 6-8, a second optical logic not gate 6-9, a third optical logic not gate 6-10, a fourth optical logic not gate 6-11, a third photodetector 6-12, a fourth photodetector 6-13, a fifth photodetector 6-14, and a sixth photodetector 6-15.
The optical logic NOT gate is shown in fig. 3, and is composed of a first 2 multiplied by 2 coupler 6-6-1, a second 2 multiplied by 2 coupler 6-6-2, a third 2 multiplied by 2 coupler 6-6-3, a fourth 2 multiplied by 2 coupler 6-6-4, a first stress light modulator 6-6-5, a second stress light modulator 6-6, a third stress light modulator 6-6-7, a fourth stress light modulator 6-6-8 and a fourth direct current voltage source 6-6-9. Wherein the fourth direct current voltage source 6-6-9 is connected to the second stress optical modulator 6-6-6 and the fourth stress optical modulator 6-6-8, and continuously inputs a high level signal so that the coupling coefficients of the second 2×2 coupler 6-6-2 and the fourth 2×2 coupler 6-6-4 are maintained at 0.96. The first 2X 2 coupler 6-6-1, the second 2X 2 coupler 6-6-2 and the fourth 2X 2 coupler 6-6-4 are the inner rings of the annular waveguide connected to form a single-ring mosaic resonant cavity; the second 2X 2 coupler 6-6-2, the third 2X 2 coupler 6-6-3 and the fourth 2X 2 coupler 6-6-4 are connected by the U-shaped optical waveguide to form an outer ring of the single-ring mosaic resonant cavity; the length of the U-shaped outer ring is greater than the circumference of the inner ring. The first stress light modulator 6-6-5, the second stress light modulator 6-6, the third stress light modulator 6-6-7 and the fourth stress light modulator 6-8 are respectively and correspondingly connected with the first 2 multiplied by 2 coupler 6-6-1, the second 2 multiplied by 2 coupler 6-2, the third 2 multiplied by 2 coupler 6-6-3 and the fourth 2 multiplied by 2 coupler 6-6-4, and the coupling coefficients of the corresponding first 2 multiplied by 2 coupler 6-6-1, the second 2 multiplied by 2 coupler 6-6-2, the third 2 multiplied by 2 coupler 6-6-3 and the fourth 2 multiplied by 2 coupler 6-6-4 can be adjusted. The light output by the tunable laser 2 is transmitted into a single-loop embedded resonant cavity through the input end of a first 2X 2 coupler 6-6-1 by the attenuator 3 and the polarization controller 4, and is transmitted into the cavity through a second 2X 2 coupler 6-6-2, a third 2X 2 coupler 6-6-3 and a fourth 2X 2 coupler 6-6-4, and after multiple cycles in the cavity, the signal output by the output end of the first 2X 2 coupler 6-6-1 realizes the function of an optical logic NOT gate.
The first optical logic NAND gate is formed by a first 2X 2 coupler 6-8-1, a second 2X 2 coupler 6-8-2, a third 2X 2 coupler 6-8-3, a fourth 2X 2 coupler 6-8-4, a first stress light modulator 6-8-5, a second stress light modulator 6-8-6, a third stress light modulator 6-8-7 and a fourth stress light modulator 6-8-8 as shown in FIG. 4. The first 2X 2 coupler 6-8-1, the second 2X 2 coupler 6-8-2 and the fourth 2X 2 coupler 6-8-4 are the inner rings of the annular waveguide connected to form a single-ring mosaic resonant cavity; the second 2X 2 coupler 6-8-2, the third 2X 2 coupler 6-8-3 and the fourth 2X 2 coupler 6-8-4 are connected by the U-shaped optical waveguide to form an outer ring of the single-ring mosaic resonant cavity, and the length of the U-shaped outer ring is larger than the circumference of the inner ring. The first stress light modulator 6-8-5, the second stress light modulator 6-8-6, the third stress light modulator 6-8-7 and the fourth stress light modulator 6-8-8 are respectively and correspondingly connected with the first 2X 2 coupler 6-8-1, the second 2X 2 coupler 6-8-2, the third 2X 2 coupler 6-8-3 and the fourth 2X 2 coupler 6-8-4, and the coupling coefficients of the corresponding first 2X 2 coupler 6-8-1, the second 2X 2 coupler 6-8-2, the third 2X 2 coupler 6-8-3 and the fourth 2X 2 coupler 6-8-4 can be adjusted. The light output by the tunable laser 2 is transmitted into a single-loop embedded resonant cavity through the input end of a first 2X 2 coupler 6-8-1 by an attenuator 3 and a polarization controller 4, and is transmitted into the cavity through a second 2X 2 coupler 6-8-2, a third 2X 2 coupler 6-8-3 and a fourth 2X 2 coupler 6-8-4, and after multiple cycles in the cavity, the signal output by the output end of the first 2X 2 coupler 6-8-1 realizes the function of an optical logic NAND gate.
The second optical logic NAND gate is formed by a first 2×2 coupler 6-9-1, a second 2×2 coupler 6-9-2, a third 2×2 coupler 6-9-3, a fourth 2×2 coupler 6-9-4, a first stress light modulator 6-9-5, a second stress light modulator 6-9-6, a third stress light modulator 6-9-7, and a fourth stress light modulator 6-9-8 as shown in FIG. 5. The first 2X 2 coupler 6-9-1, the second 2X 2 coupler 6-9-2 and the fourth 2X 2 coupler 6-9-4 are the inner rings of the annular waveguide connected to form a single-ring mosaic resonant cavity; the second 2X 2 coupler 6-9-2, the third 2X 2 coupler 6-9-3 and the fourth 2X 2 coupler 6-9-4 are connected by the U-shaped optical waveguide to form an outer ring of the single-ring mosaic resonant cavity, and the length of the U-shaped outer ring is larger than the circumference of the inner ring. The first stress light modulator 6-9-5, the second stress light modulator 6-9-6, the third stress light modulator 6-9-7 and the fourth stress light modulator 6-9-8 are respectively and correspondingly connected with the first 2X 2 coupler 6-9-1, the second 2X 2 coupler 6-9-2, the third 2X 2 coupler 6-9-3 and the fourth 2X 2 coupler 6-9-4, and the coupling coefficients of the corresponding first 2X 2 coupler 6-9-1, the second 2X 2 coupler 6-9-2, the third 2X 2 coupler 6-9-3 and the fourth 2X 2 coupler 6-9-4 can be adjusted. The light output by the tunable laser 2 is transmitted into a single-loop embedded resonant cavity through the input end of a first 2X 2 coupler 6-9-1 by the attenuator 3 and the polarization controller 4, and is transmitted into the cavity through a second 2X 2 coupler 6-9-2, a third 2X 2 coupler 6-9-3 and a fourth 2X 2 coupler 6-9-4, and after multiple cycles in the cavity, the signal output by the output end of the first 2X 2 coupler 6-9-1 realizes the function of an optical logic NAND gate.
The third optical logic NAND gate is formed by a first 2×2 coupler 6-10-1, a second 2×2 coupler 6-10-2, a third 2×2 coupler 6-10-3, a fourth 2×2 coupler 6-10-4, a first stress light modulator 6-10-5, a second stress light modulator 6-10-6, a third stress light modulator 6-10-7, and a fourth stress light modulator 6-10-8 as shown in FIG. 6. The first 2X 2 coupler 6-10-1, the second 2X 2 coupler 6-10-2 and the fourth 2X 2 coupler 6-10-4 are the inner rings of the annular waveguide connected to form a single-ring mosaic resonant cavity; the second 2X 2 coupler 6-10-2, the third 2X 2 coupler 6-10-3 and the fourth 2X 2 coupler 6-10-4 are connected by the U-shaped optical waveguide to form an outer ring of the single-ring mosaic resonant cavity, and the length of the U-shaped outer ring is larger than the circumference of the inner ring. The first stress light modulator 6-10-5, the second stress light modulator 6-10-6, the third stress light modulator 6-10-7 and the fourth stress light modulator 6-10-8 are respectively and correspondingly connected with the first 2X 2 coupler 6-10-1, the second 2X 2 coupler 6-10-2, the third 2X 2 coupler 6-10-3 and the fourth 2X 2 coupler 6-10-4, and the coupling coefficients of the corresponding first 2X 2 coupler 6-10-1, the second 2X 2 coupler 6-10-2, the third 2X 2 coupler 6-10-3 and the fourth 2X 2 coupler 6-10-4 can be adjusted. The light output by the tunable laser 2 is transmitted into a single-loop embedded resonant cavity through an attenuator 3 and a polarization controller 4 by an input end of a first 2X 2 coupler 6-10-1, and is transmitted into the cavity through a second 2X 2 coupler 6-10-2, a third 2X 2 coupler 6-10-3 and a fourth 2X 2 coupler 6-10-4, and after multiple cycles in the cavity, the signal output by the output end of the first 2X 2 coupler 6-10-1 realizes the function of an optical logic NAND gate.
The fourth optical logic NAND gate is formed by a first 2×2 coupler 6-11-1, a second 2×2 coupler 6-11-2, a third 2×2 coupler 6-11-3, a fourth 2×2 coupler 6-11-4, a first stress light modulator 6-11-5, a second stress light modulator 6-11-6, a third stress light modulator 6-11-7, and a fourth stress light modulator 6-11-8 as shown in FIG. 7. The first 2X 2 coupler 6-11-1, the second 2X 2 coupler 6-11-2 and the fourth 2X 2 coupler 6-11-4 are the inner rings of the annular waveguide connected to form a single-ring mosaic resonant cavity;
the second 2X 2 coupler 6-11-2, the third 2X 2 coupler 6-11-3 and the fourth 2X 2 coupler 6-11-4 are connected by the U-shaped optical waveguide to form an outer ring of the single-ring mosaic resonant cavity, and the length of the U-shaped outer ring is larger than the circumference of the inner ring. The first stress light modulator 6-11-5, the second stress light modulator 6-11-6, the third stress light modulator 6-11-7 and the fourth stress light modulator 6-11-8 are correspondingly connected with the first 2X 2 coupler 6-11-1, the second 2X 2 coupler 6-11-2, the third 2X 2 coupler 6-11-3 and the fourth 2X 2 coupler 6-11-4 respectively, so as to achieve the purpose of adjusting the coupling coefficients of the corresponding first 2X 2 coupler 6-11-1, the second 2X 2 coupler 6-11-2, the third 2X 2 coupler 6-11-3 and the fourth 2X 2 coupler 6-11-4. The light output by the tunable laser 2 is transmitted into a single-ring mosaic resonant cavity through an attenuator 3 and a polarization controller 4 via the input end of a first 2X 2 coupler 6-11-1, passes through a second 2X 2 coupler 6-11-2, a third 2X 2 coupler 6-11-3 and a fourth 2X 2 coupler 6-11-4 in the cavity, and is circulated for a plurality of times in the cavity and then is transmitted into a single-ring mosaic resonant cavity by the first 2
The signal output by the output end of the x 2 coupler 6-11-1 realizes the function of an optical logic NAND gate.
The signal generator 1 outputs two paths of signals, one path of signals is sent to a voltage tuning port of the tunable laser 2 and used for scanning the wavelength of the laser, and the other path of signals is sent to the data acquisition and processing system 8. As shown in fig. 2, the D flip-flop unit outputs an input signal from a first direct current voltage source 6-1, wherein one path of level signal is input to a first voltage conversion circuit 6-3, the input level signal is converted into a corresponding voltage signal through the first voltage conversion circuit 6-3 and is input to a first stress light modulator 6-8-5 and a third stress light modulator 6-8-7 in a first optical logic nand gate 6-8, the other path of level signal is input to a third voltage conversion circuit 6-5, and the input level signal is converted into a corresponding voltage value through the third voltage conversion circuit 6-5 and is input to the first stress light modulator 6-6-5 and the third stress light modulator 6-6-7 in the optical logic nand gate 6-6; the pulse signal generator 6-2 outputs a level pulse to control the time sequence state of the D trigger, and the output level signal is firstly converted into corresponding voltage values through the second voltage conversion circuit 6-4 and is respectively input to the second stress optical modulator 6-8-6 and the fourth stress optical modulator 6-8-8 of the first logic NAND gate 6-8 and the second stress optical modulator 6-8-6 and the fourth stress optical modulator 6-8-8 of the second optical logic NAND gate 6-9. At this time, the first optical logic nand gate 6-8 and the second optical logic nand gate 6-9 have two voltage inputs, which can be calculated, and the calculated output result of the first optical logic nand gate 6-8 converts the optical signal into the corresponding voltage value through the third photodetector 6-12 and inputs the corresponding voltage value to the first stress optical modulator 6-10-5 and the third stress optical modulator 6-10-7 of the third optical logic nand gate 6-10; the output result calculated by the second optical logic NAND gate 6-9 is converted into a corresponding voltage value by the fourth photodetector 6-13 and is input to the second stress optical modulator 6-11-6 and the fourth stress optical modulator 6-11-8 of the fourth optical logic NAND gate 6-11. The third optical logic NAND gate 6-10 and the fourth optical logic NAND gate 6-11 are respectively driven by an initial voltage value, at this time, the third optical logic NAND gate 6-10 and the fourth optical logic NAND gate 6-11 are respectively input by two voltage values, can perform operation, and are used for the third light One path of the operation result of the logical NAND gate 6-10 is used as a D trigger operation result Q to be output to the data acquisition and processing system 8 through the first photoelectric detector 7, the other path of the output result is converted into a corresponding voltage value through the fifth photoelectric detector 6-14 and is input to the first stress optical modulator 6-11-5 and the third stress optical modulator 6-11-7 of the fourth logical NAND gate 6-11 to be used as input voltage of the next time sequence state for operation; one path of the operation result of the fourth optical logic NAND gate 6-11 is used as the operation result of the D triggerThe output result is converted into corresponding voltage values through a sixth photoelectric detector 6-15 and is input to a second stress light modulator 6-10-6 and a fourth stress light modulator 6-10-8 of a third optical logic NAND gate 6-10 to be used as input voltage of the next time sequence state for operation. Final operation results Q and +.f of D trigger based on optical single ring mosaic resonant cavity>Displayed by the data acquisition and processing system 8.
The working principle of the invention is as follows:
the basic structures of the optical logic NOT gate, the first optical logic NOT gate, the second optical logic NOT gate, the third optical logic NOT gate and the fourth optical logic NOT gate are realized by the single-ring mosaic resonant cavity, and the structures are respectively shown in figures 3, 4, 5, 6 and 7.
The resonant cavity is formed by an annular waveguide, a U-shaped waveguide nested outside the annular waveguide and two straight waveguides, and as the structure of each optical logic gate comprises a single-ring embedded resonant cavity, the basic structure of the single-ring embedded resonant cavity is described by taking a figure III as an example: the single-ring mosaic resonant cavity is composed of an inner ring, an outer ring and a straight waveguide, and the first 2X 2 coupler 6-6-1, the second 2X 2 coupler 6-6-2 and the fourth 2X 2 coupler 6-6-4 are connected by the annular waveguide to form the inner ring; second 2X 2 coupler 6-6-2, third 2XThe 2 coupler 6-6-3 and the fourth 2 x 2 coupler 6-6-4 are connected by a U-shaped optical waveguide to form an outer ring, the length of the outer ring is longer than the circumference of the inner ring, and the first 2 x 2 coupler 6-6-1 and the third 2 x 02 coupler 6-6-3 are not directly connected. The light emitted by the tunable laser 2 is divided into five identical light signals by the attenuator 3 and the polarization controller 4 and the beam splitter 5, and the five identical light signals are respectively sent to a first 2×12 coupler 6-6-1 in the optical logic NOT gate 6-6, a first 2×2 coupler 6-8-1 in the first optical logic NOT gate 6-8, a first 2×2 coupler 6-9-1 in the second optical logic NOT gate 6-9, a first 2×2 coupler 6-10-1 in the third optical logic NOT gate 6-10 and a first 2×2 coupler 6-11-1 in the fourth optical logic NOT gate 6-14, and the coupling coefficient of the coupler formed by the Mach-Zehnder interferometer is regulated by applying voltage signals to the stress optical modulator. Here two 50 are used: 50 beam splitters to construct a 2 x 2 coupler, a stress optical modulator (consisting of a bottom electrode, PZT, a top electrode) was bonded to one arm of the mach-zehnder interferometer for control of its coupling coefficient, the bottom electrode comprising a 10nm thick titanium adhesion layer and a 100nm thick platinum layer, PZT having a thickness of 2 μm, the top electrode being a 100nm thick platinum layer, the top electrode having a width of 5 μm, the stress optical modulator having a length of 14 μm. The phase of light in one arm of the interferometer can be changed by applying a voltage signal to the stress light modulator, so that the output intensity of the light is changed, and finally, the coupling coefficient of the 2X 2 coupler is regulated and controlled. Furthermore, the first 2X 2 coupler 6-6-1 and the third 2X 2 coupler 6-6-3 in the optical logic NOT gate 6-6 share a variable voltage signal V 1 The coupling coefficients are r 1 The second 2 x 2 coupler 6-6-2 and the fourth 2 x 2 coupler 6-6-4 share a fixed voltage V 2 The input electric signal is converted into an output optical signal after being operated; the first 2 x 2 coupler 6-8-1 and the third 2 x 2 coupler 6-8-3 in the first optical logic nand gate 6-8 share a variable voltage signal V 3 The coupling coefficients are r 3 The second 2 x 2 coupler 6-8-2 and the fourth 2 x 2 coupler 6-8-4 share a variable voltage signal V 4 Coupling coefficient r 4 The input electric signal is converted into an output optical signal after being operated; first one of the second optical logic NAND gates 6-9The 2 x 2 coupler 6-9-1 and the third 2 x 2 coupler 6-9-3 share a variable voltage signal V 5 The coupling coefficients are r 5 The second 2 x 2 coupler 6-9-2 and the fourth 2 x 2 coupler 6-9-4 share a variable voltage signal V 6 Coupling coefficient r 6 The input electric signal is converted into an output optical signal after being operated; the first 2 x 2 coupler 6-10-1 and the third 2 x 2 coupler 6-10-3 in the third optical logic NAND gate 6-10 share a variable voltage signal V 7 The coupling coefficients are r 7 The second 2 x 2 coupler 6-10-2 and the fourth 2 x 2 coupler 6-10-4 share a variable voltage signal V 8 Coupling coefficient r 8 The input electric signal is converted into an output optical signal after being operated; the first 2 x 2 coupler 6-11-1 and the third 2 x 2 coupler 6-11-3 in the fourth optical logic nand gate 6-11 share a variable voltage signal V 9 The coupling coefficients are r 9 The second 2 x 2 coupler 6-11-2 and the fourth 2 x 2 coupler 6-11-4 share a variable voltage signal V 10 Coupling coefficient r 10 The input electrical signal is calculated and converted into an output optical signal.
As can be seen from the calculation, (1) when the first DC voltage source 6-1 generates a low level, one level signal is converted into a 13V voltage by the first voltage conversion circuit 6-3, and the coupling coefficients r of the first 2×2 coupler 6-8-1 and the third 2×2 coupler 6-8-3 in the first optical logic NAND gate 6-8 3 The other level signal is converted into 2.7V voltage by the third voltage converting circuit 6-5 to 0.9, and the coupling coefficient r of the first 2X 2 coupler 6-6-1 and the third 2X 2 coupler 6-6-3 in the optical logic NOT gate 6-6 1 0.1; when the first DC voltage source 6-1 generates high voltage, one level signal is converted into 8.3V voltage by the first voltage conversion circuit 6-3, and the coupling coefficient r of the first 2×2 coupler 6-8-1 and the third 2×2 coupler 6-8-3 in the first optical logic NAND gate 6-8 1 To 0.6, the other level signal is converted into 13V voltage by a third voltage conversion circuit 6-5, and the coupling coefficients r of the first 2X 2 coupler 6-6-1 and the third 2X 2 coupler 6-6-3 in the optical logic NOT gate 6-6 1 0.9. (2) When the pulse signal generator 6-2 generates a low level, the signal passesThe second voltage converting circuit 6-4 converts it into a voltage of 4.6V, and the coupling coefficients r of the second 2X 2 coupler 6-8-2 and the fourth 2X 2 coupler 6-8-4 in the first optical logic NAND gate 6-8 4 And the coupling coefficient r of the second 2 x 2 coupler 6-9-2 and the fourth 2 x 2 coupler 6-9-4 in the second optical logic nand gate 6-9 6 0.2; when the pulse signal generator 6-2 generates high level, the signal is converted into 11.1V voltage by the second voltage conversion circuit 6-4, and the coupling coefficient r of the second 2×2 coupler 6-8-2 and the fourth 2×2 coupler 6-8-4 in the first optical logic NAND gate 6-8 4 And the coupling coefficient r of the second 2 x 2 coupler 6-9-2 and the fourth 2 x 2 coupler 6-9-4 in the second optical logic nand gate 6-9 6 0.8. (3) When the light transmittance outputted by the operation result of the optical logic NOT gate 6-6 is lower than 15%, the optical signal is converted into 4.6V voltage by the second photodetector 6-7, and the coupling coefficients r of the second 2X 2 coupler 6-9-2 and the fourth 2X 2 coupler 6-9-4 in the second optical logic NOT gate 6-9 6 When the light transmittance output by the operation result of the optical logic NOT gate 6-6 is higher than 70%, the optical signal is converted into 11.1V voltage by the second photoelectric detector 6-7, and the coupling coefficient r of the second 2X 2 coupler 6-9-2 and the fourth 2X 2 coupler 6-9-4 in the second optical logic NOT gate 6-9 6 Becomes 0.8. (4) When the light transmittance outputted by the operation result of the first optical logic NAND gate 6-8 is lower than 15%, the optical signal is converted into 13V voltage by the third photodetector 6-12, and the coupling coefficients r of the first 2X 2 coupler 6-10-1 and the third 2X 2 coupler 6-10-3 in the third optical logic NAND gate 6-10 7 When the light transmittance output by the operation result of the first optical logic NAND gate 6-8 is higher than 60%, the optical signal is converted into 8.3V voltage by the third photodetector 6-12, and the coupling coefficient r of the first 2X 2 coupler 6-10-1 and the third 2X 2 coupler 6-10-3 in the third optical logic NAND gate 6-10 is changed to 0.9 7 Becomes 0.6. (5) When the light transmittance outputted by the operation result of the second optical logic NAND gate 6-9 is lower than 15%, the optical signal is converted into 4.6V voltage by the fourth photodetector 6-13, and the coupling coefficients r of the second 2X 2 coupler 6-11-2 and the fourth 2X 2 coupler 6-11-4 in the fourth optical logic NAND gate 6-11 10 Becomes 0.2, when the operation result of the second optical logic NAND gate 6-9 is outputWhen the light transmittance is higher than 60%, the light signal is converted into 11.1V voltage through the fourth photoelectric detector 6-13, and the coupling coefficient r of the second 2X 2 coupler 6-11-2 and the fourth 2X 2 coupler 6-11-4 in the fourth optical logic NAND gate 6-11 10 Becomes 0.8. (6) When the light transmittance outputted by the operation result of the third optical logic NAND gate 6-10 is lower than 15%, the fifth photodetector 6-14 converts the light signal into 13V voltage, and the coupling coefficient r of the first 2×2 coupler 6-11-1 and the third 2×2 coupler 6-11-3 in the fourth optical logic NAND gate 6-11 9 When the light transmittance outputted by the operation result of the third optical logic NAND gate 6-10 is higher than 60%, the optical signal is converted into 8.3V voltage by the fifth photodetector 6-14, and the coupling coefficient r of the first 2X 2 coupler 6-11-1 and the third 2X 2 coupler 6-11-3 in the fourth optical logic NAND gate 6-11 is changed to 0.9 9 Becomes 0.6. (7) When the light transmittance outputted by the operation result of the fourth optical logic NAND gate 6-11 is lower than 15%, the optical signal is converted into 4.6V voltage by the sixth photodetector 6-15, the coupling coefficients r of the second 2X 2 coupler 6-10-2 and the fourth 2X 2 coupler 6-10-4 in the third optical logic NAND gate 6-10 8 When the light transmittance outputted by the operation result of the fourth optical logic NAND gate 6-11 is higher than 60%, the optical signal is converted into 11.1V voltage by the sixth photodetector 6-15, and the coupling coefficient r of the second 2X 2 coupler 6-10-2 and the fourth 2X 2 coupler 6-10-4 in the third optical logic NAND gate 6-10 is changed to 0.2 8 Becomes 0.8. (8) The transmission light field of the D trigger based on the optical single-ring mosaic resonant cavity can be calculated through a transmission matrix theory, and light intensity output with different transmission intensities is obtained by inputting different voltage values into the strain gauge to generate different coupling coefficient combinations, wherein the transmission intensity of the light intensity corresponds to logic 0 and logic 1 (the light transmittance is set to be lower than 15% and corresponds to logic 0, and the light transmittance is higher than 60% and corresponds to logic 1). When the D trigger logic operation is performed, the signal output by the first direct current voltage source is an input signal, the pulse signal generator is a time sequence control voltage signal, and the output result is the light transmission intensity (or the voltage value of the photoelectric detector). Thus, the system ultimately achieves the function of a D flip-flop timing operation by a variable voltage input signal. To realize the function of the D trigger, use is made ofA variable voltage signal adjusts and initializes the coupling coefficient of the 2 x 2 coupler, and different input states correspond to different output states; a pulse signal generator is used to generate a line-time signal. In the process of realizing the D trigger, an optical logic NAND gate and an optical logic NAND gate are used, and the coupling coefficients of the D trigger are adjusted through different voltage inputs so as to realize different states of the D trigger.
The state of the optical logic NOT gate is as follows:
due to the fact that the second DC voltage source 6-6-9 inputs a fixed voltage of 14.8V into the NOT gate, the coupling coefficient r of the second 2X 2 coupler 6-6-2 and the fourth 2X 2 coupler 6-6-4 in the optical logic NOT gate 6-6 4 0.96.
State one: coupling coefficients are r respectively 1 ＝0.1，r 2 =0.96; the normalized light transmittance of the light is about 79.15 percent according to the theoretical calculation of a transmission matrix, and the output result can be 1;
state two: coupling coefficients are r respectively 1 ＝0.9，r 2 =0.96; the normalized light transmittance is about 0.91% as calculated according to the transmission matrix theory, and the output result can be 0.
The state of the first optical logic nand gate is as follows:
state one: coupling coefficients are r respectively 3 ＝0.9，r 4 =0.2; the normalized light transmittance of the light is about 96.93 percent according to the theoretical calculation of a transmission matrix, and the output result can be taken as 1;
state two: coupling coefficients are r respectively 3 ＝0.9，r 4 =0.8; the normalized light transmittance of the light is about 66.63 percent according to the theoretical calculation of a transmission matrix, and the output result can be 1;
state three: coupling coefficients are r respectively 3 ＝0.6，r 4 =0.2; the normalized light transmittance of the light is about 70.43 percent according to the theoretical calculation of a transmission matrix, and the output result can be 1;
State four: coupling coefficients are r respectively 3 ＝0.6，r 4 =0.8; calculated according to the theory of the transmission matrix, the normalized light transmittance is about 6.18 percent, and the result is outputCan be 0;
the state of the second optical logic NAND gate is as follows:
state one: coupling coefficients are r respectively 5 ＝0.9，r 6 =0.2; the normalized light transmittance of the light is about 96.93 percent according to the theoretical calculation of a transmission matrix, and the output result can be taken as 1;
state two: coupling coefficients are r respectively 5 ＝0.9，r 6 =0.8; the normalized light transmittance of the light is about 66.63 percent according to the theoretical calculation of a transmission matrix, and the output result can be 1;
state three: coupling coefficients are r respectively 5 ＝0.6，r 6 =0.2; the normalized light transmittance of the light is about 70.43 percent according to the theoretical calculation of a transmission matrix, and the output result can be 1;
state four: coupling coefficients are r respectively 5 ＝0.6，r 6 =0.8; the normalized light transmittance is about 6.18% according to the theoretical calculation of the transmission matrix, and the output result can be 0;
the state of the third optical logic NAND gate is as follows:
state one: coupling coefficients are r respectively 7 ＝0.9，r 8 =0.2; the normalized light transmittance of the light is about 96.93 percent according to the theoretical calculation of a transmission matrix, and the output result can be taken as 1;
state two: coupling coefficients are r respectively 7 ＝0.9，r 8 =0.8; the normalized light transmittance of the light is about 66.63 percent according to the theoretical calculation of a transmission matrix, and the output result can be 1;
state three: coupling coefficients are r respectively 7 ＝0.6，r 8 =0.2; the normalized light transmittance of the light is about 70.43 percent according to the theoretical calculation of a transmission matrix, and the output result can be 1;
state four: coupling coefficients are r respectively 7 ＝0.6，r 8 =0.8; the normalized light transmittance is about 6.18% according to the theoretical calculation of the transmission matrix, and the output result can be 0;
the state of the fourth optical logic NAND gate is as follows:
state one: coupling coefficients are r respectively 9 ＝0.9，r 10 =0.2; the normalized light transmittance of the light is about 96.93 percent according to the theoretical calculation of a transmission matrix, and the output result can be taken as 1;
state two: coupling coefficients are r respectively 9 ＝0.9，r 10 =0.8; the normalized light transmittance of the light is about 66.63 percent according to the theoretical calculation of a transmission matrix, and the output result can be 1;
state three: coupling coefficients are r respectively 9 ＝0.6，r 10 =0.2; the normalized light transmittance of the light is about 70.43 percent according to the theoretical calculation of a transmission matrix, and the output result can be 1;
state four: coupling coefficients are r respectively 9 ＝0.6，r 10 =0.8; the normalized light transmittance is about 6.18% according to the theoretical calculation of the transmission matrix, and the output result can be 0;
The two optical gates form a D trigger based on the optical single-ring embedded resonant cavity, and according to the states of the two optical gates, the states of the D trigger based on the optical single-ring embedded resonant cavity can be calculated. The level signal output from the first dc voltage source 6-1 is now defined as D, and the level signal output from the pulse signal generator 6-2 is defined as clk. Wherein D is a data input port, clk is a pulse time sequence control signal, and the system calculation results are respectively output by a third optical logic NAND gate 6-10 and a fourth optical logic NAND gate 6-11 in the D trigger.
Let the initial Q value be 0:
state one: input signal d=0, clk=0;
coupling coefficient r of optical logic NOT gate 6-6 1 ＝0.1，r 2 ＝0.96；
Coupling coefficient r of first optical logic NAND gate 6-8 3 ＝0.9，r 4 ＝0.2；
Coupling coefficient r of second optical logic NAND gate 6-9 5 ＝0.6，r 6 ＝0.2；
Coupling coefficient r of third optical logic NAND gate 6-10 7 ＝0.6，r 8 ＝0.8；
Coupling coefficient r of fourth optical logic NAND gate 6-11 9 ＝0.9，r 10 ＝0.8；
Calculated according to the transmission matrix theory, output Q n About 6.18% of the normalized light transmittance of the film, and outputting the result
Can be taken as 0 and outputThe normalized light transmittance of (2) is about 66.63%, and the output result can be 1;
state two: input signal d=1, clk=0;
coupling coefficient r of optical logic NOT gate 6-6 1 ＝0.9，r 2 ＝0.96；
Coupling coefficient r of first optical logic NAND gate 6-8 3 ＝0.6，r 4 ＝0.2；
Coupling coefficient r of second optical logic NAND gate 6-9 5 ＝0.9，r 6 ＝0.2；
Coupling coefficient r of third optical logic NAND gate 6-10 7 ＝0.6，r 8 ＝0.8；
Coupling coefficient r of fourth optical logic NAND gate 6-11 9 ＝0.9，r 10 ＝0.8；
Calculated according to the transmission matrix theory, output Q n The normalized light transmittance of (2) is about 6.18%, the output result can be 0, and the outputThe normalized light transmittance of (2) is about 66.63%, and the output result can be 1;
state three: input signal d=0, clk=1;
coupling coefficient r of optical logic NOT gate 6-6 1 ＝0.1，r 2 ＝0.96；
Coupling coefficient r of first optical logic NAND gate 6-8 3 ＝0.9，r 4 ＝0.8；
Coupling coefficient r of second optical logic NAND gate 6-9 5 ＝0.6，r 6 ＝0.8；
Coupling coefficient r of third optical logic NAND gate 6-10 7 ＝0.6，r 8 ＝0.8；
Coupling coefficient r of fourth optical logic NAND gate 6-11 9 ＝0.9，r 10 ＝0.2；
Calculated according to the transmission matrix theory, output Q n The normalized light transmittance of (2) is about 6.18%, the output result can be 0, and the outputThe normalized light transmittance of (2) is about 96.93%, and the output result can be 1;
state four: input signal d=1, clk=1;
coupling coefficient r of optical logic NOT gate 6-6 1 ＝0.9，r 2 ＝0.96；
Coupling coefficient r of first optical logic NAND gate 6-8 3 ＝0.6，r 4 ＝0.8；
Coupling coefficient r of second optical logic NAND gate 6-9 5 ＝0.9，r 6 ＝0.8；
Coupling coefficient r of third optical logic NAND gate 6-10 7 ＝0.9，r 8 ＝0.8；
Coupling coefficient r of fourth optical logic NAND gate 6-11 9 ＝0.6，r 10 ＝0.8；
Calculated according to the transmission matrix theory, output Q n The normalized light transmittance of (2) is about 66.63%, the output result can be 1, and the outputThe normalized light transmittance of (2) is about 6.18%, and the output result can be 0;
let the initial Q value be 1:
state five: input signal d=0, clk=0;
coupling coefficient r of optical logic NOT gate 6-6 1 ＝0.1，r 2 ＝0.96；
Coupling coefficient r of first optical logic NAND gate 6-8 3 ＝0.9，r 4 ＝0.2；
Coupling coefficient r of second optical logic NAND gate 6-9 5 ＝0.6，r 6 ＝0.2；
Coupling coefficient r of third optical logic NAND gate 6-10 7 ＝0.6，r 8 ＝0.2；
Coupling coefficient r of fourth optical logic NAND gate 6-11 9 ＝0.6，r 10 ＝0.8；
Calculated according to the transmission matrix theory, output Q n About 70.43% of normalized light transmittance, and output the result
Can be taken as 1 to outputThe normalized light transmittance of (2) is about 6.18%, and the output result can be 0;
state six: input signal d=1, clk=0;
coupling coefficient r of optical logic NOT gate 6-6 1 ＝0.9，r 2 ＝0.96；
Coupling coefficient r of first optical logic NAND gate 6-8 3 ＝0.6，r 4 ＝0.2；
Coupling coefficient r of second optical logic NAND gate 6-9 5 ＝0.9，r 6 ＝0.2；
Coupling coefficient r of third optical logic NAND gate 6-10 7 ＝0.6，r 8 ＝0.2；
Coupling coefficient r of fourth optical logic NAND gate 6-11 9 ＝0.6，r 10 ＝0.8；
Calculated according to the transmission matrix theory, output Q n The normalized light transmittance of (2) is about 70.43%, the output result can be 1, and the outputThe normalized light transmittance of (2) is about 6.18%, and the output result can be 0;
state seven: input signal d=0, clk=1;
coupling coefficient r of optical logic NOT gate 6-6 1 ＝0.1，r 2 ＝0.96；
Coupling coefficient r of first optical logic NAND gate 6-8 3 ＝0.9，r 4 ＝0.8；
Coupling coefficient r of second optical logic NAND gate 6-9 5 ＝0.6，r 6 ＝0.8；
Coupling coefficient r of third optical logic NAND gate 6-10 7 ＝0.6，r 8 ＝0.8；
Coupling coefficient r of fourth optical logic NAND gate 6-11 9 ＝0.6，r 10 ＝0.2；
Calculated according to the transmission matrix theory, output Q n The normalized light transmittance of (2) is about 6.18%, the output result can be 0, and the outputThe normalized light transmittance of (2) is about 70.43%, and the output result can be 1;
state eight: input signal d=1, clk=1;
coupling coefficient r of optical logic NOT gate 6-6 1 ＝0.9，r 2 ＝0.96；
Coupling coefficient r of first optical logic NAND gate 6-8 3 ＝0.6，r 4 ＝0.8；
Coupling coefficient r of second optical logic NAND gate 6-9 5 ＝0.9，r 6 ＝0.8；
Coupling coefficient r of third optical logic NAND gate 6-10 7 ＝0.9，r 8 ＝0.2；
Coupling coefficient r of fourth optical logic NAND gate 6-11 9 ＝0.6，r 10 ＝0.8；
Calculated according to the transmission matrix theory, output Q n The normalized light transmittance of (2) is about 96.93%, the output result can be 1, and the output The normalized light transmittance of (2) is about 6.18%, and the output result can be 0;
in addition to the above-mentioned example voltage states, other voltage states may be selected to change the coupling coefficient of the coupler, so long as the corresponding coupling coefficient can correspond to the two states after operation, we can determine that it can complete the D flip-flop logic operation. In an actual system test, the light transmittance corresponding to logic 0 may be lower and the light transmittance corresponding to logic 1 may be higher.
According to the calculation equation and the above state, we can design a D-trigger based on an optical single-ring mosaic resonator, which comprises the following specific steps:
the input signal D is generated by a first direct current voltage source, and is denoted as d=0 when the level is low and as d=1 when the level is high; the timing pulse control signal clk is generated by a pulse signal generator, clk=0 when the voltage is low, and clk=1 when the voltage is high. When initial q=0, d=0, clk=0, output Q n It can be converted into "low level" of optical signal (transmissivity is less than 15%) and outputIt can be converted into a "high level" of the optical signal (transmittance higher than 60%) corresponding to state one; when initial q=0, d=1, clk=0, output Q n It can be converted into a "low level" of the optical signal (transmittance lower than 15%), outputting +.>It can be converted into a "high level" of the optical signal (transmittance higher than 60%), corresponding to state two; when initial q=0, d=0, clk=1, output Q n It can be converted into a "low level" of the optical signal (transmittance lower than 15%), outputting +.>It can be converted into a "high level" of the optical signal (transmittance higher than 60%), corresponding to state three; when initial q=0, d=1, clk=1, output Q n It can be converted into a "high level" of the optical signal (transmittance higher than 60%) and output +.>It can be converted into a "low level" of the optical signal (transmittance lower than 15%), corresponding to state four; when initial q=1, d=0, clk=0, output Q n It can be converted into a "high level" of the optical signal (transmittance higher than 60%) and output +.>It can be converted into a "low level" of the optical signal (transmittance lower than 15%), corresponding to state five; when initial q=1, d=1, clk=0, output Q n It can be converted into a "high level" of the optical signal (transmittance higher than 60%) and output +.>It can be converted into a "low level" of the optical signal (transmittance lower than 15%), corresponding to state six; when initial q=1, d=0, clk=1, output Q n It can be converted into a "low level" of the optical signal (transmittance lower than 15%), outputting +.>It can be converted into a "high level" of the optical signal (transmittance higher than 60%), corresponding to state seven; when initial q=1, d=1, clk=1, output Q n It can be converted into a "high level" of the optical signal (transmittance higher than 60%) and output +.>It can be converted to a "low level" of the optical signal (transmittance below 15%) corresponding to state eight. Logic functions of the D trigger based on the optical single-ring mosaic resonant cavity are successfully realized. Wherein the logic function switching of each optical logic gate is changed according to the voltage value calculated based on the parameters of the bottom electrode of the stress light modulator of 10nm thick titanium layer and 100nm thick platinum layer, the PZT thickness of 2 μm, the top electrode of 100nm thick platinum layer, the top electrode width of 5 μm, and the stress light modulator length of 14 μm. If the parameters are changed, the strain and the corresponding phase caused by the voltage can be usedThe changing relation calculates the corresponding voltage value. The input signal may be different from the actual input voltage, and the level value of the input voltage (i.e., 1.35V is low and 2V is high) may be detected first to determine whether the signal is high or low, and then converted into the corresponding input signal high or low by the voltage conversion circuit. The output logic 1 or 0 can be judged through the transmitted light intensity, and the calculation result of the D trigger based on the optical single-ring mosaic resonant cavity is recorded by the data acquisition and processing system. / >

Claims (8)

1. The D trigger based on the optical single-ring mosaic resonant cavity is characterized by comprising a signal generator, a tunable laser, an attenuator, a polarization controller, a beam splitter, a D trigger unit, a first photoelectric detector and a data acquisition and processing system;
the D flip-flop unit includes: the device comprises a first direct current voltage source, a pulse signal generator, a first voltage conversion circuit, a second voltage conversion circuit, a third voltage conversion circuit, an optical logic NOT gate, a second photoelectric detector, a first optical logic NOT gate, a second optical logic NOT gate, a third optical logic NOT gate, a fourth optical logic NOT gate, a third photoelectric detector, a fourth photoelectric detector, a fifth photoelectric detector and a sixth photoelectric detector; the optical logic NOT gate and the optical logic NOT gate in the D trigger are both composed of a single-ring mosaic resonant cavity; the single-ring mosaic resonant cavity consists of an inner ring, an outer ring and a straight waveguide, wherein the inner ring is formed by connecting a first 2 multiplied by 2 coupler, a second 2 multiplied by 2 coupler and a fourth 2 multiplied by 2 coupler through the annular waveguide; the outer ring is formed by connecting a second 2X 2 coupler, a third 2X 2 coupler and a fourth 2X 2 coupler through U-shaped optical waveguides, the length of the outer ring is larger than the circumference of the inner ring, and the first 2X 2 coupler and the third 2X 2 coupler are not directly connected;
The optical logic NOT gate comprises: the first 2X 2 coupler, the second 2X 2 coupler, the third 2X 2 coupler, the fourth 2X 2 coupler, the first stress light modulator, the second stress light modulator, the third stress light modulator, the fourth stress light modulator and the fourth direct current voltage source are formed; the first 2 multiplied by 2 coupler, the second 2 multiplied by 2 coupler and the fourth 2 multiplied by 2 coupler are the inner rings of the annular waveguide connected to form a single-ring mosaic resonant cavity; the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler are connected by the U-shaped optical waveguide to form an outer ring of the single-ring embedded resonant cavity, the length of the outer ring is larger than the circumference of the inner ring, and the first 2X 2 coupler and the third 2X 2 coupler are not directly connected; the first stress light modulator, the second stress light modulator, the third stress light modulator and the fourth stress light modulator are respectively and correspondingly and directly connected with the first 2 multiplied by 2 coupler, the second 2 multiplied by 2 coupler, the third 2 multiplied by 2 coupler and the fourth 2 multiplied by 2 coupler so as to realize the purpose of adjusting the coupling coefficients of the first 2 multiplied by 2 coupler, the second 2 multiplied by 2 coupler, the third 2 multiplied by 2 coupler and the fourth 2 multiplied by 2 coupler; the fourth direct current voltage source is connected with the second stress light modulator and the fourth stress light modulator, and the fourth direct current voltage source always provides a high level signal, so that the coupling coefficient of the second 2X 2 coupler and the fourth 2X 2 coupler is kept at 0.96, the light output by the tunable laser is transmitted into the single-ring mosaic resonant cavity through the attenuator and the polarization controller by the input end of the first 2X 2 coupler, passes through the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler in the single-ring mosaic resonant cavity, and after the single-ring mosaic resonant cavity circulates, the signal output by the output end of the first 2X 2 coupler realizes the function of an optical logic NOT gate;
The first optical logic NAND gate includes: the first 2X 2 coupler, the second 2X 2 coupler, the third 2X 2 coupler, the fourth 2X 2 coupler and the first stress light modulator, the second stress light modulator, the third stress light modulator and the fourth stress light modulator are formed; the first 2 multiplied by 2 coupler, the second 2 multiplied by 2 coupler and the fourth 2 multiplied by 2 coupler are the inner rings of the annular waveguide connected to form a single-ring mosaic resonant cavity; the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler are connected by the U-shaped optical waveguide to form an outer ring of the single-ring embedded resonant cavity, the length of the outer ring is larger than the circumference of the inner ring, and the first 2X 2 coupler and the third 2X 2 coupler are not directly connected; the first stress light modulator, the second stress light modulator, the third stress light modulator and the fourth stress light modulator are correspondingly connected with the first 2×2 coupler, the second 2×2 coupler, the third 2×2 coupler and the fourth 2×2 coupler respectively, so that the purpose of adjusting the coupling coefficients of the first 2×2 coupler, the second 2×2 coupler, the third 2×2 coupler and the fourth 2×2 coupler is realized; light output by the tunable laser is transmitted into the single-ring embedded resonant cavity through the attenuator and the polarization controller by the input end of the first 2X 2 coupler, the single-ring embedded resonant cavity passes through the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler, and after circulating in the single-ring embedded resonant cavity, the signal output by the output end of the first 2X 2 coupler realizes the function of an optical logic NAND gate;
The second optical logic NAND gate includes: the first 2X 2 coupler, the second 2X 2 coupler, the third 2X 2 coupler, the fourth 2X 2 coupler and the first stress light modulator, the second stress light modulator, the third stress light modulator and the fourth stress light modulator are formed; the first 2 multiplied by 2 coupler, the second 2 multiplied by 2 coupler and the fourth 2 multiplied by 2 coupler are the inner rings of the annular waveguide connected to form a single-ring mosaic resonant cavity; the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler are connected by the U-shaped optical waveguide to form an outer ring of the single-ring embedded resonant cavity, the length of the outer ring is larger than the circumference of the inner ring, and the first 2X 2 coupler and the third 2X 2 coupler are not directly connected; the first stress light modulator, the second stress light modulator, the third stress light modulator and the fourth stress light modulator are correspondingly connected with the first 2×2 coupler, the second 2×2 coupler, the third 2×2 coupler and the fourth 2×2 coupler respectively, so that the purpose of adjusting the coupling coefficients of the first 2×2 coupler, the second 2×2 coupler, the third 2×2 coupler and the fourth 2×2 coupler is realized; light output by the tunable laser is transmitted into the single-ring embedded resonant cavity through the attenuator and the polarization controller by the input end of the first 2X 2 coupler, the single-ring embedded resonant cavity passes through the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler, and after circulating in the single-ring embedded resonant cavity, the signal output by the output end of the first 2X 2 coupler realizes the function of an optical logic NAND gate;
The third optical logic NAND gate includes: the first 2X 2 coupler, the second 2X 2 coupler, the third 2X 2 coupler, the fourth 2X 2 coupler and the first stress light modulator, the second stress light modulator, the third stress light modulator and the fourth stress light modulator are formed; the first 2 multiplied by 2 coupler, the second 2 multiplied by 2 coupler and the fourth 2 multiplied by 2 coupler are the inner rings of the annular waveguide connected to form a single-ring mosaic resonant cavity; the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler are connected by the U-shaped optical waveguide to form an outer ring of the single-ring embedded resonant cavity, the length of the outer ring is larger than the circumference of the inner ring, and the first 2X 2 coupler and the third 2X 2 coupler are not directly connected; the first stress light modulator, the second stress light modulator, the third stress light modulator and the fourth stress light modulator are correspondingly connected with the first 2×2 coupler, the second 2×2 coupler, the third 2×2 coupler and the fourth 2×2 coupler respectively, so that the purpose of adjusting the coupling coefficients of the first 2×2 coupler, the second 2×2 coupler, the third 2×2 coupler and the fourth 2×2 coupler is realized; light output by the tunable laser is transmitted into the single-ring embedded resonant cavity through the attenuator and the polarization controller by the input end of the first 2X 2 coupler, the single-ring embedded resonant cavity passes through the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler, and after circulating in the single-ring embedded resonant cavity, the signal output by the output end of the first 2X 2 coupler realizes the function of an optical logic NAND gate;
The fourth optical logic nand gate includes: the first 2X 2 coupler, the second 2X 2 coupler, the third 2X 2 coupler, the fourth 2X 2 coupler and the first stress light modulator, the second stress light modulator, the third stress light modulator and the fourth stress light modulator are formed; the first 2X 2 coupler, the second 2X 2 coupler and the fourth 2X 2 coupler are connected through the annular waveguide to form an inner ring, the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler are connected through the U-shaped optical waveguide to form an outer ring of the single-ring embedded resonant cavity, the length of the outer ring is larger than the circumference of the inner ring, and the first 2X 2 coupler and the third 2X 2 coupler are not directly connected; the first stress light modulator, the second stress light modulator, the third stress light modulator and the fourth stress light modulator are correspondingly connected with the first 2×2 coupler, the second 2×2 coupler, the third 2×2 coupler and the fourth 2×2 coupler respectively, so that the purpose of adjusting the coupling coefficients of the first 2×2 coupler, the second 2×2 coupler, the third 2×2 coupler and the fourth 2×2 coupler is realized; light output by the tunable laser is transmitted into the single-ring embedded resonant cavity through the attenuator and the polarization controller by the input end of the first 2X 2 coupler, the single-ring embedded resonant cavity passes through the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler, and after circulating in the single-ring embedded resonant cavity, the signal output by the output end of the first 2X 2 coupler realizes the function of an optical logic NAND gate;
The signal generator outputs two paths of signals, one path of signals is sent to a voltage tuning port of the tunable laser and used for scanning the wavelength of the laser, and the other path of signals is sent to the data acquisition and processing system;
the D trigger unit outputs an input signal by a first direct current voltage source, wherein one path of level signal is input to a first voltage conversion circuit, the input level signal is converted into a corresponding voltage signal through the first voltage conversion circuit and is input to a first stress light modulator and a third stress light modulator in a first optical logic NAND gate, the other path of level signal is input to a third voltage conversion circuit, and the input level signal is converted into a corresponding voltage value through the third voltage conversion circuit and is input to the first stress light modulator and the third stress light modulator in the optical logic NAND gate; the pulse signal generator outputs level pulses to control the time sequence state of the D trigger, and output level signals are converted into corresponding voltage values through a second voltage conversion circuit and are respectively input to a second stress optical modulator and a fourth stress optical modulator of the first logic NAND gate and a second stress optical modulator and a fourth stress optical modulator of the second optical logic NAND gate; at this time, the first optical logic NAND gate and the second optical logic NAND gate both have two voltage inputs, logic calculation is performed, the calculation output result of the first optical logic NAND gate converts the optical signal into a corresponding voltage value through the third photodetector, and the corresponding voltage value is input to the first stress optical modulation of the third optical logic NAND gate A modulator, a third stress light modulator; the output result is calculated by the second optical logic NAND gate, and the optical signal is converted into a corresponding voltage value by a fourth photoelectric detector and is input to a second stress optical modulator and a fourth stress optical modulator of the fourth optical logic NAND gate; the third optical logic NAND gate and the fourth optical logic NAND gate are respectively driven by an initial voltage value, at the moment, the third optical logic NAND gate and the fourth optical logic NAND gate are respectively input by two voltage values and are subjected to logic calculation, one path of operation result of the third optical logic NAND gate is used as an operation result Q of a D trigger and is output to a data acquisition and processing system through a first photoelectric detector, the other path of output result is converted into corresponding voltage values through a fifth photoelectric detector and is input to a first stress light modulator and a third stress light modulator of the fourth optical logic NAND gate to be used as input voltages of the next time sequence state for operation; one path of the operation result of the fourth optical logic NAND gate is used as the operation result of the D triggerThe output result is converted into a corresponding voltage value through a sixth photoelectric detector and is input into a second stress light modulator and a fourth stress light modulator of a third optical logic NAND gate to be used as input voltage of the next time sequence state for operation; final operation results Q and +.f of D trigger based on optical single ring mosaic resonant cavity >Displaying by a data acquisition and processing system; the voltage conversion circuit detects the level of a voltage signal in the digital system and converts the level into a corresponding voltage signal value;
when the signal passes through the first voltage conversion circuit, the signal is converted into 2.7V voltage when a low level is input, and is converted into 13V voltage when a high level is input; when the signal passes through the second voltage conversion circuit, the signal is converted into 2.7V voltage when the low level is input, and is converted into 13V voltage when the high level is input; when the signal passes through the third voltage conversion circuit, the input is lowThe level is converted into 2.7V, and when the high level is input, the voltage is converted into 13V voltage; when the signal passes through the fourth voltage conversion circuit, the input low level is converted into 2.7V, and the input high level is converted into 14.8V; the light output by the tunable laser is divided into five beams by the beam splitter through the attenuator and the polarization controller, the five beams are respectively transmitted into the single-ring mosaic resonant cavity through the input ends of the first 2X 2 couplers of the optical logic NOT gate, the first optical logic NOT gate, the second optical logic NOT gate, the third optical logic NOT gate and the fourth optical logic NOT gate, the single-ring mosaic resonant cavity is circulated in the single-ring mosaic resonant cavity through the second 2X 2 coupler, the third 2X 2 coupler and the fourth 2X 2 coupler, the operation results of the optical logic NOT gate are respectively output by the output ends of the first 2X 2 couplers, and the operation results of the first optical logic NOT gate, the second optical logic NOT gate, the third optical logic NOT gate and the fourth optical logic NOT gate are respectively output by the output ends of the first 2X 2 couplers corresponding to the optical logic gates; the final operation result Q is sent to the first photoelectric detector by the third optical logic NAND gate The operation result is sent to the first photoelectric detector by the output end of the first 2×2 coupler of the fourth optical logic NAND gate, and is sent to the data acquisition and processing system through the first photoelectric detector.
2. The optical single ring damascene resonator based D flip-flop of claim 1, wherein: when the first direct current voltage source generates low level, one path of level signal is converted into 13V voltage through a first voltage conversion circuit, the coupling coefficient r3 of a first 2X 2 coupler and a third 2X 2 coupler in the first optical logic NAND gate is 0.9, the other path of level signal is converted into 2.7V voltage through a third voltage conversion circuit, and the coupling coefficient r1 of the first 2X 2 coupler and the third 2X 2 coupler in the optical logic NAND gate is 0.1; when the first direct current voltage source generates high level, one path of level signal is converted into 8.3V voltage through a first voltage conversion circuit, the coupling coefficient r1 of a first 2X 2 coupler and a third 2X 2 coupler in the first optical logic NAND gate is changed into 0.6, the other path of level signal is converted into 13V voltage through a third voltage conversion circuit, and the coupling coefficient r1 of the first 2X 2 coupler and the third 2X 2 coupler in the optical logic NAND gate is 0.9; when the pulse signal generator generates a low level, the signal is converted into 4.6V voltage through a second voltage conversion circuit, and the coupling coefficient r4 of the second 2X 2 coupler and the fourth 2X 2 coupler in the first optical logic NAND gate and the coupling coefficient r6 of the second 2X 2 coupler and the fourth 2X 2 coupler in the second optical logic NAND gate are 0.2; when the pulse signal generator generates a high level, the signal is converted into 11.1V voltage through a second voltage conversion circuit, and the coupling coefficient r4 of the second 2X 2 coupler and the fourth 2X 2 coupler in the first optical logic NAND gate and the coupling coefficient r6 of the second 2X 2 coupler and the fourth 2X 2 coupler in the second optical logic NAND gate are 0.8; when the light transmittance output by the optical logic NOT gate operation result is lower than 15%, converting the light signal into 4.6V voltage through a second photoelectric detector, wherein the coupling coefficient r6 of a second 2X 2 coupler and a fourth 2X 2 coupler in the second optical logic NOT gate becomes 0.2, and when the light transmittance output by the optical logic NOT gate operation result is higher than 70%, converting the light signal into 11.1V voltage through the second photoelectric detector, and the coupling coefficient r6 of the second 2X 2 coupler and the fourth 2X 2 coupler in the second optical logic NOT gate becomes 0.8; when the light transmittance output by the operation result of the first optical logic NAND gate is lower than 15%, converting the light signal into 13V voltage through a third photoelectric detector, wherein the coupling coefficient r7 of the first 2X 2 coupler and the third 2X 2 coupler in the third optical logic NAND gate becomes 0.9, and when the light transmittance output by the operation result of the first optical logic NAND gate is higher than 60%, converting the light signal into 8.3V voltage through the third photoelectric detector, and the coupling coefficient r7 of the first 2X 2 coupler and the third 2X 2 coupler in the third optical logic NAND gate becomes 0.6; when the light transmittance output by the operation result of the second optical logic NAND gate is lower than 15%, converting the light signal into 4.6V voltage through a fourth photoelectric detector, wherein the coupling coefficient r10 of the second 2X 2 coupler and the fourth 2X 2 coupler in the fourth optical logic NAND gate becomes 0.2, and when the light transmittance output by the operation result of the second optical logic NAND gate is higher than 60%, converting the light signal into 11.1V voltage through the fourth photoelectric detector, and the coupling coefficient r10 of the second 2X 2 coupler and the fourth 2X 2 coupler in the fourth optical logic NAND gate becomes 0.8; when the light transmittance output by the operation result of the third optical logic NAND gate is lower than 15%, converting the light signal into 13V voltage through a fifth photoelectric detector, wherein the coupling coefficient r9 of the first 2X 2 coupler and the third 2X 2 coupler in the fourth optical logic NAND gate becomes 0.9, and when the light transmittance output by the operation result of the third optical logic NAND gate is higher than 60%, converting the light signal into 8.3V voltage through the fifth photoelectric detector, and the coupling coefficient r9 of the first 2X 2 coupler and the third 2X 2 coupler in the fourth optical logic NAND gate becomes 0.6; when the light transmittance output by the operation result of the fourth optical logic NAND gate is lower than 15%, converting the light signal into 4.6V voltage through a sixth photoelectric detector, wherein the coupling coefficient r8 of the second 2X 2 coupler and the fourth 2X 2 coupler in the third optical logic NAND gate becomes 0.2, and when the light transmittance output by the operation result of the fourth optical logic NAND gate is higher than 60%, converting the light signal into 11.1V voltage through the sixth photoelectric detector, and the coupling coefficient r8 of the second 2X 2 coupler and the fourth 2X 2 coupler in the third optical logic NAND gate becomes 0.8; the transmitted light field of the D trigger based on the optical single-ring mosaic resonant cavity can be calculated through the theory of a transmission matrix.
3. The optical single ring damascene resonator based D flip-flop of claim 1, wherein: here, the light transmittance is set to be lower than 15% corresponding to logic 0, and the light transmittance is set to be higher than 60% corresponding to logic 1.
4. The optical single ring damascene resonator based D flip-flop of claim 1, wherein: the perimeter ratio of the inner ring to the outer ring in the optical system of the single-ring embedded resonant cavity is 1:2, and a silicon waveguide is selected.
5. The optical single ring damascene resonator based D flip-flop of claim 1, wherein: the 2 multiplied by 2 coupler in the single-ring mosaic resonant cavity adopts Mach-Zehnder interferometer, and the coupling coefficient can be adjusted by adjusting the phase of the interferometer; the coupling coefficients of the first 2 multiplied by 2 coupler and the third 2 multiplied by 2 coupler in the logic gate are consistent, and the coupling coefficients of the second 2 multiplied by 2 coupler and the fourth 2 multiplied by 2 coupler are consistent; the voltage signals of the stress light modulators of the corresponding first 2 multiplied by 2 coupler and the third 2 multiplied by 2 coupler are consistent, and the voltage signals of the stress light modulators of the second 2 multiplied by 2 coupler and the fourth 2 multiplied by 2 coupler are also consistent; the voltage value converted by the voltage conversion circuit is calculated based on parameters that the bottom electrode in the stress light modulator is a titanium layer with the thickness of 10nm and a platinum layer with the thickness of 100nm, the PZT thickness is 2 mu m, the top electrode is a platinum layer with the thickness of 100nm, the width of the top electrode is 5 mu m, and the length of the stress light modulator is 14 mu m.
6. The optical single ring damascene resonator based D flip-flop of claim 1, wherein: before the voltage signal to be operated is input, the voltage signal is subjected to voltage conversion circuit module, and the module realizes level detection and voltage conversion; the photoelectric detector and the conversion circuit thereof realize that the output optical signal is converted into an electric signal and is converted into a corresponding voltage value through the voltage conversion circuit module.
7. The optical single ring damascene resonator based D flip-flop of claim 1, wherein: the 2 x 2 coupler includes: the device comprises an annular waveguide, a U-shaped waveguide nested outside the annular waveguide and two straight waveguides.
8. The optical single ring damascene resonator based D flip-flop of claim 1, wherein: the tunable laser includes an optical isolator.
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