CN114258201A

CN114258201A - Preparation method of stacked structure, stacked structure and touch sensor

Info

Publication number: CN114258201A
Application number: CN202011011133.0A
Authority: CN
Inventors: 蔡宜珍; 方玮嘉; 朱俊鸿; 萧仲钦; 吴孟芸; 赖姿璇
Original assignee: Cambrios Film Solutions Xiamen Corp
Current assignee: Cambrios Film Solutions Xiamen Corp
Priority date: 2020-09-23
Filing date: 2020-09-23
Publication date: 2022-03-29
Also published as: JP2022052693A; KR20220040350A

Abstract

A method of making a stacked structure, comprising: providing a base material; printing a nano silver line layer on the substrate by using a flexographic printing technology; and printing a metal layer on the substrate and the nano-silver layer by using a flexographic printing technology, wherein the metal layer comprises: a metal grid at least partially covering the substrate and the layer of nanosilver; and a metal wire connected to the metal mesh. A stacked structure, comprising: a substrate; a layer of nano-silver wires; and a metal layer. The preparation method of the stacked structure and the stacked structure can be applied to a touch sensor.

Description

Preparation method of stacked structure, stacked structure and touch sensor

Technical Field

The invention relates to a preparation method of a laminated structure, in particular to a preparation method of a laminated structure by applying a flexography technology. The present invention also relates to a laminated structure, and more particularly, to a laminated structure including a metal layer having a metal mesh. The present invention further relates to a touch sensor, and more particularly, to a touch sensor including the above stacked structure.

Background

The stacked structure including the silver nanowires and the metal layer can be applied to a touch sensor. In the fabrication method of the stacked structure in the prior art, the wiring area TA and the visible area VA are defined by a one-step etching process of developing with yellow light and copper and nano silver. The prior art stacked structure formed by the above-mentioned fabrication method of stacked structure is shown in fig. 1, fig. 2 and fig. 3. Referring to fig. 1 and 2, a stack structure 10 of the prior art includes: a substrate 11; a nano-silver wire layer 12 disposed on the substrate 11; and a metal layer 13 disposed on the nano-silver wire layer 12, wherein the metal layer 13 includes a metal sheet 131 and a metal wire 132, and a portion of the metal layer 13 directly contacts the substrate 11. Furthermore, in another embodiment of the prior art laminated structure shown in fig. 3, the prior art laminated structure 10 comprises: a substrate 11; a nano-silver wire layer 12 disposed on the substrate 11; and a metal layer 13 disposed on the nano-silver wire layer 12, wherein the metal layer 13 includes a metal sheet 131 and a metal wire 132, and the nano-silver wire layer 12 is disposed between the metal layer 13 and the substrate 11. The prior art stacked structure comprises: a trace area TA including the metal wire 132; a first bonding region 15 including a region of the metal sheet 131 closer to the metal wire 132; a second bonding region 16 including a region of the metal sheet 131 farther from the metal wire 132; a visible area VA including an area adjacent to one side of the metal sheet 131, which is covered by the nano-silver wire layer 14 and not covered by the metal sheet 131.

In the stacked structure formed by the preparation method of the stacked structure in the prior art, the first bonding area 15 and the second bonding area 16 are both made of solid copper, and the process is complicated and expensive. Therefore, there is a need for a novel stacked structure, a method for manufacturing the stacked structure, and a touch sensor.

Disclosure of Invention

In order to solve the problems of complicated manufacturing process and high cost of the preparation method of the stacked structure in the prior art, the invention provides a novel preparation method of the stacked structure, the stacked structure and a touch sensor.

To achieve the above and other objects, the present invention provides a method for preparing a stacked structure, comprising:

providing a base material;

printing a nano silver line layer on the substrate by using a flexographic printing technology; and

printing a metal layer on the substrate and the nano-silver layer by using a flexographic printing technology, wherein the metal layer comprises:

a metal grid at least partially covering the substrate and the layer of nanosilver; and

and a metal wire connected with the metal grid.

In the above method, the material of the metal layer may be selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy and silver-lead alloy.

In the above method, the material of the substrate may be selected from the group consisting of Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

In the above preparation method, the thickness of the layer of nano-silver wires may be greater than 0.3 μm.

In the above preparation method, the penetration (T%) of the overlapped portion of the nano silver wire layer and the metal mesh is less than 90%.

To achieve the above and other objects, the present invention further provides a stacked structure, comprising:

a substrate;

a nano silver wire layer arranged on the substrate; and

a metal layer disposed on the substrate and the layer of silver nanowires, wherein the metal layer comprises:

and a metal wire connected with the metal grid.

In the above stacked structure, the metal layer is made of a material selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy and silver-lead alloy.

In the above stacked structure, the material of the substrate is selected from the group consisting of Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

In the stacked structure, the thickness of the layer of silver nanowires is greater than 0.3 μm.

In the stacked structure, the transmittance (T%) of the portion of the layer of silver nanowires overlapping the metal mesh is less than 90%.

The above stacked structure, wherein the stacked structure comprises: a routing area including the metal wire; a first overlap region comprising a region of the metal mesh overlying the layer of nanosilver; a second overlapping area, which comprises an opaque area covered on the nano silver wire layer in the metal grid and a transparent area adjacent to two opposite sides of the metal grid, covered by the nano silver wire layer and not covered by the metal grid; a visible area comprising an area adjacent to one side of the metal mesh that is covered by the layer of nanosilver and not covered by the metal mesh.

In the above stacked structure, the ratio of the transparent region in the second overlapping region is smaller than the ratio of the opaque region, and the ratio of the transparent region in the second overlapping region is smaller than 50%.

In the above stacked structure, the total width of the first and second overlapping regions is less than 500 μm, and the ratio of the width of the first and second overlapping regions is between 0.1 and 10.

In the above stacked structure, the total width of the first overlapping area and the second overlapping area is between 0.5mm and 1.0mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.05 and 20.

In the above stacked structure, the total width of the first overlapping area and the second overlapping area is between 1.0mm and 1.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.03 and 30.

In the above stacked structure, the total width of the first overlapping area and the second overlapping area is between 1.5mm and 2.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.02 and 50.

In the stacked structure, the pitch of the metal mesh in the first bonding region is 0.1 to 10 times the pitch of the metal wire.

In the stacked structure, the metal wires have a pitch of 20 μm, a line width of 10 μm and a line distance of 10 μm, and the metal grids in the first bonding regions have a pitch of 2 μm to 200 μm.

The above stacked structure, wherein the line width in the first overlapping region is between about 2 μm and 50 μm, and the line pitch is between about 2 μm and 10 μm.

The above stacked structure, wherein the line width/line distance of the metal mesh in the first overlapping region is 40 μm/10 μm, 30 μm/10 μm, 20 μm/10 μm or 10 μm/10 μm.

In the above stacked structure, the line width of the metal conductive line is between 3 μm and 30 μm, and the line pitch is between 3 μm and 30 μm.

The above stacked structure further comprises:

a bonding pad disposed on the substrate, comprising:

the metal mesh is bonded.

To achieve the above and other objects, the present invention further provides a touch sensor, comprising:

a stacked structure as described above; and

a cover layer disposed on the metal layer in the stacked structure.

The touch sensor may further include:

a second layer of silver nanowires disposed below the substrate in the stacked structure as described above;

a second metal layer disposed under the substrate and the second silver nanowire layer, wherein the second metal layer comprises:

a second metal grid at least partially covering the substrate and the second layer of nanosilver; and

a second metal wire connected to the second metal mesh; and

a second capping layer disposed below the second metal layer.

The preparation method of the stacked structure can simplify the manufacturing process of the stacked structure and reduce the preparation cost of the stacked structure and the touch sensor comprising the stacked structure.

The stacked structure and the touch sensor comprising the stacked structure can reduce consumption of metal raw materials so as to reduce the manufacturing cost of the stacked structure and the touch sensor comprising the stacked structure.

Drawings

Fig. 1 is a schematic diagram of a prior art stacked structure.

Fig. 2 is a schematic cross-sectional view of a prior art stacked structure.

Fig. 3 is a schematic cross-sectional view of another embodiment of a prior art stacked structure.

Fig. 4 is a flow chart of a method of manufacturing a stacked structure of the present invention.

Fig. 5 is a schematic diagram of an exemplary flexographic printing technique.

Fig. 6 is a schematic view of a stacked structure according to embodiment 2 of the present invention.

Fig. 7 is a schematic cross-sectional view of a stacked structure according to embodiment 2 of the present invention.

Fig. 8 is a schematic view of the stacked structure of embodiment 3.

Fig. 9 is a schematic sectional view of the stacked structure of example 3 taken along the a-a section.

Fig. 10 is a schematic sectional view of the stacked structure of example 3 taken along the B-B section.

Fig. 11 is a schematic sectional view of the stacked structure of example 3 taken along the C-C section.

Fig. 12 is a schematic sectional view of the stacked structure of example 3 taken along the D-D section.

Fig. 13 is a schematic diagram of a touch sensor and a manufacturing process thereof in embodiment 4 of the invention.

Fig. 14 is a schematic view of a touch sensor and a manufacturing process thereof in embodiment 5 of the invention.

The reference numbers are as follows:

2 ink supply device

3 Anilox roll

4 scraper

5 printing plate cylinder

6 flexible plate

7 printed matter

10-fold structure

11 base material

12 nm silver wire layer

13 Metal layer

131 metal sheet

132 metal wire

15 first overlap region

16 second overlap region

20-fold structure

21 base material

22 nm silver wire layer

23 Metal layer

231 metal mesh

232 metal conducting wire

25 first overlap region

26 second overlap region

27 opaque region

28 light transmission region

30-fold structure

31 base material

32 nm silver wire layer

33 metal layer

331 metal grid

331' bonded metal mesh

332 metal conductor

35 first overlap region

36 second overlap region

37 opaque region

38 light transmitting region

39 bonding pad

40-fold structure

40' touch sensor

41 base material

42 nm silver wire layer

43 Metal layer

431 metal grid

432 metal wire

45 first overlap region

46 second overlap region

47 coating

50-fold structure

50' touch sensor

51 base material

52 nm silver wire layer

52' second silver nanowire layer

53 metal layer

53' second metal layer

531 Metal grid

531' second metal grid

532 metal wire

532' second metal wire

55 first overlap region

56 second overlap region

57 coating layer

57' second cover layer

Step S1

Step S2

Step S3

TA routing area

VA visual area

Section A-A

Section B-B

C-C section

D-D section

Detailed Description

The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be apparent to those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and its several details are capable of modification and various changes in form and details are capable of being made without departing from the spirit and scope of the present invention.

As used in the specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise.

The term "or" as used in the specification and appended claims, unless the context clearly dictates otherwise, means "and/or" including ".

The "width" of the first and second overlapping regions as described herein refers to the width of the first and second overlapping regions in the a-a section as shown in fig. 8.

The "Pitch" as used herein refers to the shortest distance between the central axis of a metal wire and the central axis of another adjacent metal wire, or between the central axis of a metal line in a metal mesh and the central axis of another adjacent metal line.

The "line pitch" as used herein refers to the shortest distance between an edge of a metal wire and an edge of another adjacent metal wire, or between an edge of a metal line in a metal mesh and an edge of another adjacent metal line.

Example 1

Fig. 4 is a flowchart of a method for manufacturing a stacked structure according to example 1 of the present invention. As shown in fig. 4, the method for preparing the stacked structure of example 1 of the present invention includes: providing a substrate S1; printing a nano silver line layer on the substrate by using a flexography technology S2; and printing a metal layer on the substrate and the nano-silver layer by using a flexographic printing technology, wherein the metal layer comprises: a metal grid at least partially covering the substrate and the layer of nanosilver; and metal wires connected to the metal mesh S3.

The material of the substrate used in step S1 of the preparation method of the present embodiment is not particularly limited, and suitable materials include, but are not limited to, Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

In step S2 of the manufacturing method of this embodiment, a layer of silver nanowires is printed on the substrate by using the well-known flexography technique. The thickness of the layer of nanosilver is not particularly limited as long as it provides appropriate conductivity. For example, the layer of nanosilver may be greater than 0.3 μm thick.

In step S3 of the manufacturing method of the present embodiment, a metal layer is printed on the substrate and the layer of nano-silver wires by using the well-known flexography technology. The composition of the metal layer is not particularly limited as long as appropriate conductivity can be provided. For example, the material of the metal layer may be copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy and/or silver-lead alloy, but the invention is not limited thereto.

The metal layer printed in step S3 of the preparation method of the present embodiment includes a metal mesh at least partially covering the substrate and the layer of nano-silver wires; and a metal wire connected to the metal mesh. Through the above technical means, the stacked structure manufactured by the manufacturing method of the present embodiment may have the structure as described in the following embodiment 2, so that it can be applied to a touch sensor.

In a preferred embodiment, the penetration (T%) of the overlapping portion of the layer of silver nanowires and the metal mesh in the stacked structure prepared by the preparation method of this embodiment is less than 90%.

Fig. 5 exemplarily illustrates the flexographic printing technique applied in step S2 and step S3 of the manufacturing method of the present embodiment, but the present invention is not limited thereto. As shown in fig. 5, an exemplary flexographic printing technique applies an ink supply 2 to drop ink onto an Anilox roller 3, and then scrapes off excess ink on the Anilox roller 3 by a doctor blade 4. Next, the ink on the anilox roller 3 is transferred onto a flexographic Plate 6 on a Plate cylinder 5. Finally, the ink on the flexible plate 6 is transferred to the printed matter 7 to print a desired pattern on the printed matter 7.

Example 2

Fig. 6 and 7 are schematic views of the stacked structure according to embodiment 2 of the present invention. As shown in fig. 6 and 7, the stacked structure 20 of the present embodiment includes: a substrate 21 (not shown in FIG. 6); a nano-silver wire layer 22 disposed on the substrate 21; a metal layer 23 disposed on the substrate 21 and the nano-silver wire layer 22, wherein the metal layer 23 comprises: a metal mesh 231 at least partially covering the substrate 21 and the nano-silver wire layer 22; and a metal wire 232 connected to the metal mesh 231.

The stack structure 20 of the present embodiment includes: a trace area TA including the metal wire 232; a first lap joint region 25 including a region of the metal mesh 231 not covered with the nano-silver wire layer 22; a second overlapping area 26, which includes an opaque region 27 covered by the layer 22 of silver nanoparticles in the metal mesh 231 and a transparent region 28 adjacent to the two opposite sides of the metal mesh 231, covered by the layer 22 of silver nanoparticles and not covered by the metal mesh 231; a visible area VA including an area adjacent to one side of the metal mesh 231, which is covered by the nano-silver wire layer 22 and not covered by the metal mesh 231.

The material of the substrate in the stacked structure of the present embodiment is not particularly limited, and suitable materials include, but are not limited to, Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

The composition of the metal layer in the stacked structure of the present embodiment is not particularly limited as long as it provides appropriate conductivity. For example, the material of the metal layer may be copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy and/or silver-lead alloy, but the invention is not limited thereto.

The thickness of the layer of silver nanowires in the stacked structure of the present embodiment is not particularly limited as long as it provides appropriate conductivity. For example, the layer of nanosilver may be greater than 0.3 μm thick.

In a preferred embodiment, the penetration (T%) of the portion of the silver nanowire layer overlapping the metal mesh in the stacked structure of the embodiment is less than 90%.

In a preferred embodiment, in the stacked structure of this embodiment, in the second overlapping region, the ratio of the transparent region is smaller than the ratio of the opaque region, and the ratio of the transparent region in the second overlapping region is smaller than 50%.

In a preferred embodiment, the total width of the first overlapping region and the second overlapping region in the stacked structure of the embodiment is less than 500 μm, and the ratio of the widths of the first overlapping region and the second overlapping region is between 0.1 and 10.

In a preferred embodiment, in the stacked structure of the present embodiment, the total width of the first overlapping area and the second overlapping area is between 0.5mm and 1.0mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.05 and 20.

In a preferred embodiment, in the stacked structure of the present embodiment, the total width of the first overlapping area and the second overlapping area is between 1.0mm and 1.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.03 and 30.

In a preferred embodiment, in the stacked structure of the present embodiment, the total width of the first overlapping area and the second overlapping area is between 1.5mm and 2.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.02 and 50.

In a preferred embodiment, the pitch of the metal grid in the first bonding region in the stacked structure of the embodiment is 0.1 to 10 times the pitch of the metal wire.

In a preferred embodiment, the pitch of the metal wires in the stacked structure of the present embodiment is 20 μm, the line width is 10 μm, and the line distance is 10 μm, and the pitch of the metal mesh in the first landing area is between 2 μm and 200 μm.

In a preferred embodiment, the first overlapping region has a line width of about 2 μm to about 50 μm and a line pitch of about 2 μm to about 10 μm.

In a preferred embodiment, the line width/line distance of the metal mesh in the first overlapping area is 40 μm/10 μm, 30 μm/10 μm, 20 μm/10 μm or 10 μm/10 μm.

In a preferred embodiment, the line width of the metal conductive line in the stacked structure of the present embodiment is between 3 μm and 30 μm and the line pitch is between 3 μm and 30 μm.

For example, the stacked structure of the present embodiment can be prepared by the preparation method as described in example 1, but the present invention is not limited thereto.

Example 3

Fig. 8, 9, 10, 11 and 12 are schematic views of a stacked structure according to embodiment 3 of the present invention. As shown in fig. 8, 9, 10, 11, and 12, the stacked structure 30 of the present embodiment includes: a substrate 31 (not shown in FIG. 8); a nano-silver wire layer 32 disposed on the substrate 31; a metal layer 33 disposed on the substrate 31 and the nano-silver wire layer 32, wherein the metal layer 33 comprises: a metal mesh 331 at least partially covering the substrate 31 and the nano-silver wire layer 32; and metal wires 332 connected to the metal grid 331.

The stacking structure 30 of the present embodiment includes: a trace area TA including the metal wire 332; a first lap region 35 comprising the area of the metal mesh 331 not covered by the layer 32 of silver nanowires; a second bonding region 36, which includes an opaque region 37 of the metal mesh 331 covering the layer 32 of silver nanowires and transparent regions 38 adjacent to two opposite sides of the metal mesh 331 covered by the layer 32 of silver nanowires and not covered by the metal mesh 331; a visible area VA including an area adjacent to one side of the metal mesh 331 covered by the nano-silver wire layer 32 and not covered by the metal mesh 331.

Compared to embodiment 2, the stacked structure 30 of the present embodiment further includes: a bonding pad 39 disposed on the substrate 31, comprising: the metal mesh 331' is bonded.

The bonding pad of the present embodiment can be used as a contact for connecting with an external circuit.

For example, the stacked structure of the present embodiment can be prepared by the preparation method as described in example 1, but the present invention is not limited thereto. In this case, the metal layer and the bonding pad in the stacked structure of the present embodiment can be printed simultaneously in a single flexographic printing step.

Example 4

Fig. 13 is a schematic diagram of a touch sensor and a manufacturing process thereof in embodiment 4 of the invention. As shown in fig. 13, the touch sensor 40' of the present embodiment has the stacking structure 40 as described in embodiment 2.

The stacked structure 40 of the touch sensor 40' of the present embodiment includes: a substrate 41; a nano-silver wire layer 42 disposed on the substrate 41; a metal layer 43 disposed on the substrate 41 and the nano-silver wire layer 42, wherein the metal layer 43 comprises: a metal grid 431 at least partially covering the substrate 41 and the nano-silver wire layer 42; and a metal wire 432 connected to the metal mesh 431.

The stacked structure 40 in the touch sensor 40' of the present embodiment includes: a trace area TA including the metal wire 432; a first overlap region 45 including a region of the metal mesh 431 not covered by the layer 42 of silver nanowires; a second bonding region 46, which includes the opaque region of the metal mesh 431 covering the nano-silver wire layer 42 and the transparent region adjacent to the two opposite sides of the metal mesh 431 covered by the nano-silver wire layer 42 and not covered by the metal mesh 431; a visible area VA including an area adjacent to one side of the metal mesh 431, which is covered by the nano-silver wire layer 42 and not covered by the metal mesh 431.

Compared to embodiment 2, the touch sensor 40' of the present embodiment further includes a covering layer 47 disposed on the nano-silver wire layer 32.

As shown in fig. 13, an exemplary process for manufacturing the touch sensor 40' of the present embodiment includes providing a substrate 41; printing a nano-silver layer 42 on the substrate 41 by using a flexographic printing technology; printing a metal layer 43 on the substrate 41 and the nano-silver layer 42 by using a flexographic printing technique, wherein the metal layer 43 comprises: a metal grid 431 at least partially covering the substrate 41 and the nano-silver wire layer 42; and a metal wire 432 connected to the metal mesh 431; and a capping layer 47 is disposed over the metal layer 43.

Example 5

Fig. 14 is a schematic view of a touch sensor and a manufacturing process thereof in embodiment 5 of the invention. As shown in fig. 14, the touch sensor 50' of the present embodiment has the stack structure 50 as described in embodiment 2.

The stacked structure 50 of the touch sensor 50' of the present embodiment includes: a substrate 51; a nano-silver wire layer 52 disposed on the substrate 51; a metal layer 53 disposed on the substrate 51 and the nano-silver wire layer 52, wherein the metal layer 53 comprises: a metal mesh 531 at least partially covering the substrate 51 and the nano-silver wire layer 52; and a metal wire 532 connected to the metal mesh 531.

The stack structure 50 in the touch sensor 50' of the present embodiment includes: a routing area TA including the metal wires 532; a first lap region 55 comprising the area of the metal mesh 531 not covered by the layer 52 of silver nanowires; a second overlapping area 56, which includes the opaque region of the metal mesh 531 covering the nano-silver wire layer 52 and the transparent region adjacent to the two opposite sides of the metal mesh 531 covered by the nano-silver wire layer 52 and not covered by the metal mesh 531; a visible area VA including an area adjacent to one side of the metal mesh 531 covered by the nano-silver wire layer 52 and not covered by the metal mesh 531.

Compared to embodiment 2, the touch sensor 50' of the present embodiment further includes a covering layer 57 disposed on the metal layer 53.

Compared to embodiment 4, the touch sensor 50' of the present embodiment further includes: a second layer 52' of silver nanowires, which is disposed under the substrate 51 in the stacked structure as described above; a second metal layer 53' disposed under the substrate 51 and the second silver nanowire layer 52', wherein the second metal layer 53' comprises: a second metal mesh 531 'at least partially covering the substrate 51 and the second layer of silver nanowires 52'; and a second metal wire 532 'connected to the second metal mesh 531'; and a second capping layer 57 'disposed under the second metal layer 53'.

As shown in fig. 14, an exemplary process for manufacturing the touch sensor 50' of the present embodiment includes providing a substrate 51; applying a flexographic printing technique to simultaneously print a layer 52 of nano-silver wires and a second layer 52' of nano-silver wires on both sides of the substrate 51; applying flexographic printing technology, simultaneously printing a metal layer 53 on the substrate 51 and the layer of silver nanowires 52, and printing a second metal layer 53 'under the substrate 51 and the second layer of silver nanowires 52', wherein the metal layer 53 comprises: a metal mesh 531 at least partially covering the substrate 51 and the nano-silver wire layer 52; and metal wires 532 connected to the metal mesh 531, and the second metal layer 53' includes: a second metal mesh 531 'at least partially covering the substrate 51 and the second layer of silver nanowires 52'; and a second metal wire 532 'connected to the second metal mesh 531'; and a capping layer 57 is disposed on the silver nanowire layer 52, and a second capping layer 57 'is disposed under the second silver nanowire layer 52'.

In summary, the manufacturing method of the stacked structure, the stacked structure and the touch sensor of the present invention have at least the following excellent technical effects:

1. the preparation method of the laminated structure of the invention applies the flexography technology to print the nano silver wire layer and then applies the flexography technology to print the metal layer, thus completely avoiding the traditional complicated and expensive yellow light etching process. Therefore, the preparation method of the stacked structure can simplify the manufacturing process of the stacked structure and reduce the preparation cost of the stacked structure. The preparation method of the stacked structure can be applied to the manufacturing process of the touch sensor, so that the preparation cost of the touch sensor comprising the stacked structure is reduced.

2. The metal layer of the stacked structure comprises the metal mesh, so that the stacked structure and the touch sensor comprising the stacked structure have unique stacked design in the first lap joint area and the second lap joint area. Compared with the traditional metal sheet, the metal grid can reduce the consumption of metal raw materials so as to reduce the manufacturing cost of the stacked structure and the touch sensor comprising the stacked structure, thereby realizing the touch sensor with an ultra-narrow frame (square).

The above-described embodiments are merely illustrative of the present invention and are not intended to limit the present invention. Modifications and variations can be made to the above-described embodiments by those of ordinary skill in the art without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention is to be defined by the claims set forth below.

Claims

1. A method for preparing a stacked structure, comprising:

providing a base material;

printing a nano silver line layer on the substrate by applying a flexographic printing technology; and

printing a metal layer on the substrate and the nano silver line layer by using a flexible printing technology, wherein the metal layer comprises:

a metal mesh at least partially covering the substrate and the layer of nanosilver; and

a metal wire connected with the metal mesh.

2. The method of claim 1, wherein the metal layer is made of a material selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy, and silver-lead alloy.

3. The method of claim 1, wherein the substrate is made of a material selected from the group consisting of Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

4. The method of claim 1, wherein the layer of nanosilver is greater than 0.3 μ ι η thick.

5. A laminated structure, comprising:

a substrate;

a layer of silver nanowires disposed on the substrate;

a metal layer disposed over the substrate and the silver nanowire layer, wherein the metal layer comprises:

a metal wire connected with the metal mesh.

6. The laminated structure of claim 5, wherein the metal layer is selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver-nickel alloy, and silver-lead alloy.

7. The laminated structure of claim 5, wherein the substrate is selected from the group consisting of Polyethylene terephthalate (PET), Cyclic olefin Copolymer (COP), Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC), and Polyethersulfone (PES).

8. The stacked structure of claim 5, wherein the layer of nanosilver is greater than 0.3 μ ι η thick.

9. The laminated structure of claim 5, wherein the laminated structure comprises: a routing area including the metal wire; a first overlap region comprising an area of the metal mesh overlying the layer of nanosilver; a second overlap region comprising an opaque region of the metal mesh overlying the layer of nanosilver and transmissive regions adjacent opposite sides of the metal mesh that are covered by the layer of nanosilver and not covered by the metal mesh; a viewable area comprising an area adjacent to one side of the metal mesh that is covered by the layer of nanosilver and not covered by the metal mesh.

10. The stacked structure of claim 9 wherein said light transmitting region occupies less than said non-light transmitting region in said second lap region and said light transmitting region occupies less than 50% of said second lap region.

11. The laminated structure according to claim 9, wherein the total width of the first and second overlapping regions is less than 500 μm, and the ratio of the widths of the first and second overlapping regions is between 0.1 and 10.

12. The laminated structure of claim 9, wherein the total width of the first and second overlapping regions is between 0.5mm and 1.0mm, and the ratio of the width of the first and second overlapping regions is between 0.05 and 20.

13. The laminated structure of claim 9, wherein the total width of the first overlapping area and the second overlapping area is between 1.0mm and 1.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.03 and 30.

14. The laminated structure of claim 9, wherein the total width of the first overlapping area and the second overlapping area is between 1.5mm and 2.5mm, and the ratio of the width of the first overlapping area to the width of the second overlapping area is between 0.02 and 50.

15. The stacked structure of claim 9, wherein a pitch of the metal mesh in the first landing area is 0.1 to 10 times a pitch of the metal wire.

16. The stacked structure of claim 9, wherein the metal conductive lines have a pitch of 20 μm, a line width of 10 μm and a line pitch of 10 μm, and the metal mesh in the first landing area has a pitch of 2 μm to 200 μm.

17. The stacked structure of claim 16, wherein the metal mesh in the first strap region has a line width between about 2 μm and about 50 μm and a line pitch between about 2 μm and about 10 μm.

18. The stacked structure of claim 17, wherein the metal mesh in the first landing area has a line width/line spacing of 40 μ ι η/10 μ ι η, 30 μ ι η/10 μ ι η, 20 μ ι η/10 μ ι η, or 10 μ ι η/10 μ ι η.

19. The stacked structure of claim 9, wherein the metal conductive lines have a line width of 3 μm to 30 μm and a line pitch of 3 μm to 30 μm.

20. The laminated structure of claim 9, further comprising:

a bond pad disposed on the substrate, comprising:

the metal mesh is bonded.

21. A touch sensor, comprising:

a stacked structure as claimed in any one of claims 5 to 20; and

a capping layer disposed on the metal layer in the stacked structure of any one of claims 5 to 20.

22. The touch sensor of claim 21, further comprising:

a second layer of nanosilver disposed beneath the substrate in the stacked structure of any one of claims 5 to 20;

a second metal layer disposed below the substrate and the second silver nanowire layer, wherein the second metal layer comprises:

a second metal mesh at least partially covering the substrate and the second layer of nanosilver; and

a second metal wire connected to the second metal mesh; and

a second capping layer disposed below the second metal layer.