TWI789634B - Fabrication method of laminated structure, laminated structure and touch sensor - Google Patents

Fabrication method of laminated structure, laminated structure and touch sensor Download PDF

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TWI789634B
TWI789634B TW109133912A TW109133912A TWI789634B TW I789634 B TWI789634 B TW I789634B TW 109133912 A TW109133912 A TW 109133912A TW 109133912 A TW109133912 A TW 109133912A TW I789634 B TWI789634 B TW I789634B
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metal
layer
area
silver
metal grid
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TW202213392A (en
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蔡宜珍
方瑋嘉
朱俊鴻
蕭仲欽
吳孟芸
賴姿璇
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大陸商天材創新材料科技(廈門)有限公司
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Abstract

一種疊構結構之製備方法,包含:提供一基材;應用柔版印刷技術,將一奈米銀線層印製於該基材之上;以及應用柔版印刷技術,將一金屬層印製於該基材及該奈米銀線層之上,其中該金屬層包含:金屬網格,其係至少部分覆蓋該基材及該奈米銀線層;及金屬導線,其係與該金屬網格連接。一種疊構結構,包含:一基材;一奈米銀線層;以及一金屬層。上述疊構結構之製備方法及疊構結構可應用於觸控感應器。 A method for preparing a laminated structure, comprising: providing a base material; applying a flexographic printing technique to print a nano silver wire layer on the base material; and applying a flexographic printing technique to print a metal layer On the base material and the silver nano wire layer, wherein the metal layer comprises: a metal grid, which at least partially covers the base material and the silver nano wire layer; and a metal wire, which is connected with the metal grid grid connection. A laminated structure, comprising: a base material; a nano-silver wire layer; and a metal layer. The preparation method and the above-mentioned stacked structure can be applied to touch sensors.

Description

疊構結構之製備方法、疊構結構及觸控感應器 Fabrication method of laminated structure, laminated structure and touch sensor

本發明係關於一種疊構結構之製備方法,尤指一種應用柔版印刷技術之疊構結構之製備方法。本發明亦關於一種疊構結構,尤指一種包含具有金屬網格之金屬層的疊構結構。本發明亦關於一種觸控感應器,尤指一種包含上述疊構結構的觸控感應器。 The present invention relates to a method for preparing a laminated structure, in particular to a method for preparing a laminated structure using flexographic printing technology. The present invention also relates to a stack structure, especially a stack structure comprising a metal layer with a metal grid. The present invention also relates to a touch sensor, in particular to a touch sensor comprising the above-mentioned stacked structure.

包含奈米銀線及金屬層之疊構結構可應用於觸控感測器中。先前技術之疊構結構之製備方法係透過黃光顯影搭配銅及奈米銀的一次性蝕刻製程,以定義走線區域TA與可視區域VA。應用上述之疊構結構的製備方法所形成之先前技術之疊構結構係如圖1、圖2及圖3所示。參照圖1及圖2,先前技術之疊構結構10,包含:一基材11;一奈米銀線層12,其係設置於該基材11之上;以及一金屬層13,其係設置於該奈米銀線層12之上,其中該金屬層13包含金屬片材131及金屬導線132,且部分該金屬層13係直接與該基材11接觸。此外,在圖3所示之先前技術之疊構結構之另一實施例中,先前技術之疊構結構10,包含:一基材11;一奈米銀線層12,其係設置於該基材11之上;以及一金屬層13,其係設置於該奈米銀線層12之上,其中該金屬層13包含金屬片材131及金屬導線132,且該金屬層13係與該基材11之間皆包含該奈米銀線層12。先前技術之疊構結構係包含:一走線區域TA,其係包括該金屬導線132;一第一 搭接區域15,其係包括該金屬片材131中較為鄰近該金屬導線132之區域;一第二搭接區域16,其係包括該金屬片材131中較為遠離該金屬導線132之區域;一可視區域VA,其係包括鄰近該金屬片材131之一側之由該奈米銀線層12所覆蓋且未被該金屬片材131所覆蓋之區域。 The stacked structure including silver nanowires and metal layers can be applied to touch sensors. The preparation method of the stacked structure in the prior art is to define the routing area TA and the visible area VA through yellow light development combined with a one-time etching process of copper and nano-silver. The stacked structure of the prior art formed by the above-mentioned preparation method of the stacked structure is shown in FIG. 1 , FIG. 2 and FIG. 3 . Referring to Fig. 1 and Fig. 2, the laminated structure 10 of prior art comprises: a base material 11; A nano silver wire layer 12, it is arranged on this base material 11; And a metal layer 13, it is set On the silver nanowire layer 12 , the metal layer 13 includes a metal sheet 131 and a metal wire 132 , and part of the metal layer 13 is in direct contact with the substrate 11 . In addition, in another embodiment of the stacked structure of the prior art shown in FIG. 3, the stacked structure 10 of the prior art includes: a substrate 11; a silver nanowire layer 12, which is arranged on the substrate and a metal layer 13, which is arranged on the nano silver wire layer 12, wherein the metal layer 13 includes a metal sheet 131 and a metal wire 132, and the metal layer 13 is connected with the base material 11 all include the silver nanowire layer 12 . The stacked structure of the prior art includes: a routing area TA, which includes the metal wire 132; a first An overlapping area 15, which includes an area relatively close to the metal wire 132 in the metal sheet 131; a second overlapping area 16, which includes an area relatively far away from the metal wire 132 in the metal sheet 131; The visible area VA includes an area adjacent to one side of the metal sheet 131 covered by the silver nanowire layer 12 and not covered by the metal sheet 131 .

先前技術之疊構結構之製備方法所形成之疊構結構中,第一搭接區域15與第二搭接區域16均為整面實心的銅所構成,其製程較為繁瑣及昂貴。因此,有必要提供新穎之疊構結構之製備方法、疊構結構及觸控感應器。 In the stacked structure formed by the manufacturing method of the stacked structure in the prior art, the first overlapping region 15 and the second overlapping region 16 are made of solid copper on the entire surface, and the manufacturing process is relatively cumbersome and expensive. Therefore, it is necessary to provide a novel method for preparing a laminated structure, a laminated structure and a touch sensor.

為改善先前技術之疊構結構之製備方法製程較為繁瑣及昂貴的問題,本發明係提供新穎之疊構結構之製備方法、疊構結構及觸控感應器。 In order to improve the cumbersome and expensive manufacturing process of the stacked structure of the prior art, the present invention provides a novel stacked structure manufacturing method, stacked structure and touch sensor.

為達上述目的及其他目的,本發明係提供一種疊構結構之製備方法,包含:提供一基材;應用柔版印刷技術,將一奈米銀線層印製於該基材之上;以及應用柔版印刷技術,將一金屬層印製於該基材及該奈米銀線層之上,其中該金屬層包含:金屬網格,其係至少部分覆蓋該基材及該奈米銀線層;及金屬導線,其係與該金屬網格連接。 In order to achieve the above and other purposes, the present invention provides a method for preparing a stacked structure, comprising: providing a substrate; applying flexographic printing technology to print a silver nanowire layer on the substrate; and Using flexographic printing technology, printing a metal layer on the substrate and the silver nanowire layer, wherein the metal layer includes: a metal grid at least partially covering the substrate and the silver nanowire layer layer; and metal wires connected to the metal grid.

上述之製備方法,其中,該金屬層之材料可選自由銅、銅-鎳合金、銅-鉛合金、銀、銀-鎳合金及銀-鉛合金所組成之群組。 In the above preparation method, the material of the metal layer can be selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver, silver-nickel alloy and silver-lead alloy.

上述之製備方法,其中,該基材之材料可選自由聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、環烯烴共聚物(Cyclic olefin copolymer,COP)、無色聚醯亞胺(Colorless Polyimide,CPI)、聚萘二甲酸乙二醇酯(Polyethylene naphthalate,PEN)、聚碳酸酯(Polycarbonate,PC)及聚醚碸(Polyethersulfone,PES)所組成之群組。 The above-mentioned preparation method, wherein, the material of the substrate can be selected from polyethylene terephthalate (polyethylene terephthalate, PET), cyclic olefin copolymer (Cyclic olefin copolymer, COP), colorless polyimide (Colorless Polyimide) , CPI), polyethylene naphthalate (Polyethylene naphthalate, PEN), polycarbonate (Polycarbonate, PC) and polyethersulfone (Polyethersulfone, PES).

上述之製備方法,其中,該奈米銀線層之厚度可大於0.3μm。 In the above preparation method, the thickness of the silver nano wire layer can be greater than 0.3 μm.

上述之製備方法,其中,該奈米銀線層係與該金屬網格重疊之部分之穿透度(T%)小於90%。 The above-mentioned preparation method, wherein, the penetration (T%) of the overlapping part of the silver nano wire layer and the metal grid is less than 90%.

為達上述目的及其他目的,本發明亦提供一種疊構結構,包含:一基材;一奈米銀線層,其係設置於該基材之上;以及一金屬層,其係設置於該基材及該奈米銀線層之上,其中該金屬層包含:金屬網格,其係至少部分覆蓋該基材及該奈米銀線層;及金屬導線,其係與該金屬網格連接。 To achieve the above purpose and other purposes, the present invention also provides a stacked structure, comprising: a base material; a silver nanowire layer disposed on the base material; and a metal layer disposed on the base material On the substrate and the silver nanowire layer, wherein the metal layer includes: a metal grid, which at least partially covers the substrate and the silver nanowire layer; and a metal wire, which is connected to the metal grid .

上述之疊構結構,其中,該金屬層之材料係選自由銅、銅-鎳合金、銅-鉛合金、銀、銀-鎳合金及銀-鉛合金所組成之群組。 In the above stacked structure, wherein the material of the metal layer is selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver, silver-nickel alloy and silver-lead alloy.

上述之疊構結構,其中,該基材之材料係選自由聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、環烯烴共聚物(Cyclic olefin copolymer,COP)、無色聚醯亞胺(Colorless Polyimide,CPI)、聚萘二甲酸乙二醇酯 (Polyethylene naphthalate,PEN)、聚碳酸酯(Polycarbonate,PC)及聚醚碸(Polyethersulfone,PES)所組成之群組。 In the above-mentioned laminated structure, wherein the material of the base material is selected from polyethylene terephthalate (polyethylene terephthalate, PET), cyclic olefin copolymer (Cyclic olefin copolymer, COP), colorless polyimide (Colorless Polyimide, CPI), polyethylene naphthalate (Polyethylene naphthalate, PEN), polycarbonate (Polycarbonate, PC) and polyethersulfone (Polyethersulfone, PES).

上述之疊構結構,其中,該奈米銀線層之厚度係大於0.3μm。 In the aforementioned stacked structure, the thickness of the silver nanowire layer is greater than 0.3 μm.

上述之疊構結構,其中,該奈米銀線層係與該金屬網格重疊之部分之穿透度(T%)小於90%。 In the above stacked structure, the penetration (T%) of the overlapping portion of the silver nano wire layer and the metal grid is less than 90%.

上述之疊構結構,其中,該疊構結構係包含:一走線區域,其係包括該金屬導線;一第一搭接區域,其係包括該金屬網格中未覆蓋該奈米銀線層之區域;一第二搭接區域,其係包括該金屬網格中覆蓋該奈米銀線層之不透光區及鄰近該金屬網格之相對二側之由該奈米銀線層所覆蓋且未被該金屬網格所覆蓋之透光區;一可視區域,其係包括鄰近該金屬網格之一側之由該奈米銀線層所覆蓋且未被該金屬網格所覆蓋之區域。 The above-mentioned stacked structure, wherein, the stacked structure includes: a routing area, which includes the metal wire; a first overlapping area, which includes the metal grid that does not cover the nano silver wire layer area; a second overlapping area, which includes the opaque area covering the silver nanowire layer in the metal grid and the two opposite sides adjacent to the metal grid covered by the silver nanowire layer and not covered by the metal grid; a visible area, which includes an area adjacent to the side of the metal grid that is covered by the nano silver wire layer and not covered by the metal grid .

上述之疊構結構,其中,該第二搭接區域中,該透光區所佔的比例係小於該不透光區所占的比例,且該透光區在該第二搭接區域中所佔的比例係小於50%。 In the above-mentioned stacked structure, wherein, in the second overlapping area, the proportion of the light-transmitting area is smaller than that of the opaque area, and the proportion of the light-transmitting area in the second overlapping area The proportion is less than 50%.

上述之疊構結構,其中,該第一搭接區域與該第二搭接區域的總寬度係小於500μm,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.1~10之間。 The above-mentioned laminated structure, wherein the total width of the first overlapping region and the second overlapping region is less than 500 μm, and the ratio of the width of the first overlapping region to the second overlapping region is 0.1 between ~10.

上述之疊構結構,其中,該第一搭接區域與該第二搭接區域的總寬度係介於0.5mm~1.0mm之間,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.05~20之間。 The above-mentioned laminated structure, wherein, the total width of the first overlapping area and the second overlapping area is between 0.5 mm and 1.0 mm, and the width of the first overlapping area and the second overlapping area The width ratio is between 0.05 and 20.

上述之疊構結構,其中,該第一搭接區域與該第二搭接區域的總寬度係介於1.0mm~1.5mm之間,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.03~30之間。 The above-mentioned laminated structure, wherein, the total width of the first overlapping area and the second overlapping area is between 1.0 mm and 1.5 mm, and the width of the first overlapping area and the second overlapping area The width ratio is between 0.03 and 30.

上述之疊構結構,其中,該第一搭接區域與該第二搭接區域的總寬度係介於1.5mm~2.5mm之間,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.02~50之間。 The above-mentioned laminated structure, wherein, the total width of the first overlapping area and the second overlapping area is between 1.5 mm and 2.5 mm, and the width of the first overlapping area and the second overlapping area The width ratio is between 0.02 and 50.

上述之疊構結構,其中,該第一搭接區域中之金屬網格之節距係為該金屬導線之節距的0.1~10倍。 In the aforementioned stacked structure, the pitch of the metal grid in the first overlapping region is 0.1-10 times the pitch of the metal wire.

上述之疊構結構,其中,該金屬導線之節距為20μm、線寬為10μm且線距為10μm,且該第一搭接區域中之金屬網格之節距係介於2μm~200μm之間。 The above stacked structure, wherein the pitch of the metal wires is 20 μm, the line width is 10 μm, and the line spacing is 10 μm, and the pitch of the metal grid in the first overlapping region is between 2 μm and 200 μm .

上述之疊構結構,其中,該第一搭接區域中之金屬網格之線寬係介於約2μm~50μm之間,且線距係介於約2μm~10μm之間。 In the above stacked structure, wherein the line width of the metal grid in the first overlapping region is between about 2 μm˜50 μm, and the line spacing is between about 2 μm˜10 μm.

上述之疊構結構,其中,該第一搭接區域中之金屬網格之線寬/線距係為40μm/10μm、30μm/10μm、20μm/10μm或10μm/10μm。 In the above stacked structure, the line width/space of the metal grid in the first overlapping region is 40 μm/10 μm, 30 μm/10 μm, 20 μm/10 μm or 10 μm/10 μm.

上述之疊構結構,其中,該金屬導線之線寬係介於3μm~30μm之間且線距係介於3μm~30μm之間。 In the above stacked structure, the line width of the metal wire is between 3 μm and 30 μm and the line pitch is between 3 μm and 30 μm.

上述之疊構結構,其中,進一步包含:一接合墊,其係設置於該基材之上,包括:接合金屬網格。 The above-mentioned stacked structure further includes: a bonding pad disposed on the base material, including: bonding metal mesh.

為達上述目的及其他目的,本發明亦提供一種觸控感測器,包含: 如上所述之疊構結構;以及一覆蓋層,其係設置於如上所述之疊構結構中的金屬層之上。 To achieve the above and other purposes, the present invention also provides a touch sensor, comprising: The above-mentioned stack structure; and a covering layer, which is disposed on the metal layer in the above-mentioned stack structure.

上述之觸控感測器,可進一步包含:一第二奈米銀線層,其係設置於如上所述之疊構結構中的基材之下;一第二金屬層,其係設置於該基材及該第二奈米銀線層之下,其中該第二金屬層包含:第二金屬網格,其係至少部分覆蓋該基材及該第二奈米銀線層;及第二金屬導線,其係與該第二金屬網格連接;以及一第二覆蓋層,其係設置於該第二金屬層之下。 The above-mentioned touch sensor may further include: a second nano silver wire layer, which is arranged under the substrate in the above-mentioned stacked structure; a second metal layer, which is arranged on the Under the base material and the second nano silver wire layer, wherein the second metal layer comprises: a second metal grid at least partially covering the base material and the second nano silver wire layer; and a second metal wire, which is connected with the second metal grid; and a second covering layer, which is arranged under the second metal layer.

本發明之疊構結構之製備方法可簡化疊構結構之製程,降低疊構結構及包含該疊構結構之觸控感應器之製備成本。 The preparation method of the stacked structure of the present invention can simplify the manufacturing process of the stacked structure, and reduce the manufacturing cost of the stacked structure and the touch sensor including the stacked structure.

本發明之疊構結構及包含該疊構結構之觸控感應器可減少金屬原料之消耗,以降低疊構結構及包含該疊構結構之觸控感應器之製備成本。 The stacked structure and the touch sensor comprising the stacked structure of the present invention can reduce the consumption of metal raw materials, so as to reduce the manufacturing cost of the stacked structure and the touch sensor comprising the stacked structure.

2:供墨器 2: ink supply

3:網紋輥 3: Anilox roller

4:刮刀 4: scraper

5:印版滾筒 5: plate cylinder

6:柔版 6: Flexo

7:印刷物 7: Printed matter

10:疊構結構 10:Stack structure

11:基材 11: Substrate

12:奈米銀線層 12: Nano silver wire layer

13:金屬層 13: metal layer

131:金屬片材 131: metal sheet

132:金屬導線 132: metal wire

15:第一搭接區域 15: The first overlapping area

16:第二搭接區域 16:Second overlapping area

20:疊構結構 20: Stacked structure

21:基材 21: Substrate

22:奈米銀線層 22: Nano silver wire layer

23:金屬層 23: metal layer

231:金屬網格 231:Metal grid

232:金屬導線 232: metal wire

25:第一搭接區域 25: First lap area

26:第二搭接區域 26:Second overlapping area

27:不透光區 27: Opaque area

28:透光區 28: Translucent area

30:疊構結構 30:Stack structure

31:基材 31: Substrate

32:奈米銀線層 32: nano silver wire layer

33:金屬層 33: metal layer

331:金屬網格 331:Metal grid

331':接合金屬網格 331': Bonded metal mesh

332:金屬導線 332: metal wire

35:第一搭接區域 35: The first overlapping area

36:第二搭接區域 36:Second overlapping area

37:不透光區 37: Opaque area

38:透光區 38: Translucent area

39:接合墊 39: Joint Pad

40:疊構結構 40:Stack structure

40':觸控感測器 40': Touch sensor

41:基材 41: Substrate

42:奈米銀線層 42: nano silver wire layer

43:金屬層 43: metal layer

431:金屬網格 431: metal mesh

432:金屬導線 432: metal wire

45:第一搭接區域 45: First lap area

46:第二搭接區域 46:Second overlapping area

47:覆蓋層 47: Overlay

50:疊構結構 50:Stack structure

50':觸控感測器 50': Touch sensor

51:基材 51: Substrate

52:奈米銀線層 52: nano silver wire layer

52':第二奈米銀線層 52': The second nano silver wire layer

53:金屬層 53: metal layer

53':第二金屬層 53': second metal layer

531:金屬網格 531:Metal grid

531':第二金屬網格 531': second metal grid

532:金屬導線 532: metal wire

532':第二金屬導線 532': second metal wire

55:第一搭接區域 55: First lap area

56:第二搭接區域 56:Second overlapping area

57:覆蓋層 57: Overlay

57':第二覆蓋層 57': Second overlay

S1:步驟 S1: step

S2:步驟 S2: step

S3:步驟 S3: step

TA:走線區域 TA: Trace area

VA:可視區域 VA: visible area

A-A:截面 A-A: cross section

B-B:截面 B-B: section

C-C:截面 C-C: section

D-D:截面 D-D: section

〔圖1〕係為先前技術之疊構結構的示意圖。 [Fig. 1] is a schematic diagram of a stacked structure of the prior art.

〔圖2〕係為先前技術之疊構結構的剖面示意圖。 [Fig. 2] is a schematic cross-sectional view of a stacked structure of the prior art.

〔圖3〕係為先前技術之疊構結構之另一實施方式的剖面示意圖。 [Fig. 3] is a schematic cross-sectional view of another embodiment of the stacked structure of the prior art.

〔圖4〕係為本發明之疊構結構之製備方法的流程圖。 [Fig. 4] is a flowchart of the preparation method of the stacked structure of the present invention.

〔圖5〕係為示例性柔版印刷技術之示意圖。 [FIG. 5] is a schematic diagram of an exemplary flexographic printing technique.

〔圖6〕係為本發明實施例2之疊構結構之示意圖。 [Fig. 6] is a schematic diagram of the stacked structure of Embodiment 2 of the present invention.

〔圖7〕係為本發明實施例2之疊構結構之剖面示意圖。 [FIG. 7] is a schematic cross-sectional view of the stacked structure of Embodiment 2 of the present invention.

〔圖8〕係為實施例3之疊構結構之示意圖。 [Fig. 8] is a schematic diagram of the stacked structure of Embodiment 3.

〔圖9〕係為實施例3之疊構結構之沿A-A截面之剖面示意圖。 [Fig. 9] is a schematic cross-sectional view of the stacked structure of Embodiment 3 along the A-A section.

〔圖10〕係為實施例3之疊構結構之沿B-B截面之剖面示意圖。 [Fig. 10] is a schematic cross-sectional view along the B-B section of the stacked structure of Embodiment 3.

〔圖11〕係為實施例3之疊構結構之沿C-C截面之剖面示意圖。 [Fig. 11] is a schematic cross-sectional view along the C-C section of the stacked structure of Embodiment 3.

〔圖12〕係為實施例3之疊構結構之沿D-D截面之剖面示意圖。 [FIG. 12] is a schematic cross-sectional view along the D-D section of the stacked structure of Embodiment 3.

〔圖13〕係為本發明實施例4之觸控感測器及其製備流程之示意圖。 [FIG. 13] is a schematic diagram of the touch sensor and its manufacturing process according to Embodiment 4 of the present invention.

〔圖14〕係為本發明實施例5之觸控感測器及其製備流程之示意圖。 [FIG. 14] is a schematic diagram of the touch sensor and its manufacturing process according to Embodiment 5 of the present invention.

以下係藉由特定的具體實施例說明本發明之實施方式,熟習此技藝之人士可由本說明書所揭示之內容瞭解本發明之其他優點與功效。本發明也可藉由其他不同的具體實施例加以實施或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本發明之精神下進行各種修飾與變更。 The implementation of the present invention is described below through specific examples, and those skilled in the art can understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

除非文中另有說明,否則說明書及所附申請專利範圍中所使用之單數形式「一」及「該」包括複數含義。 As used in the specification and the appended claims, the singular forms "a" and "the" include plural references unless otherwise stated in the context.

除非文中另有說明,否則說明書及所附申請專利範圍中所使用之術語「或」包括「及/或」之含義。 Unless otherwise stated in the text, the term "or" used in the specification and the appended claims includes the meaning of "and/or".

本文中所述之第一搭接區域及第二搭接區域之「寬度」係指第一搭接區域及第二搭接區域在如圖8所示之A-A截面上之寬度。 The "width" of the first overlapping area and the second overlapping area mentioned herein refers to the width of the first overlapping area and the second overlapping area on the A-A section as shown in FIG. 8 .

本文中所述之「節距(Pitch)」係指金屬導線之中心軸線與相鄰之另一金屬導線之中心軸線之間的最短距離,或是金屬網格中之金屬線條之中心軸線與相鄰之另一金屬線條之中心軸線之間的最短距離。 The "pitch" mentioned in this article refers to the shortest distance between the central axis of a metal wire and the central axis of another adjacent metal wire, or the distance between the central axis of a metal line in a metal grid and the corresponding distance. The shortest distance between the central axes of another adjacent metal line.

本文中所述之「線距」係指金屬導線之邊緣與相鄰之另一金屬導線之邊緣之間的最短距離,或是金屬網格中之金屬線條之邊緣與相鄰之另一金屬線條之邊緣之間的最短距離。 The "line pitch" mentioned in this article refers to the shortest distance between the edge of a metal wire and the edge of another adjacent metal wire, or the edge of a metal line in a metal grid and another adjacent metal line The shortest distance between the edges.

實施例1 Example 1

圖4係為本發明實施例1之疊構結構之製備方法的流程圖。如圖4所示,本發明實施例1之疊構結構之製備方法,包含:提供一基材S1;應用柔版印刷技術,將一奈米銀線層印製於該基材之上S2;以及應用柔版印刷技術,將一金屬層印製於該基材及該奈米銀線層之上,其中該金屬層包含:金屬網格,其係至少部分覆蓋該基材及該奈米銀線層;及金屬導線,其係與該金屬網格連接S3。 Fig. 4 is a flow chart of the preparation method of the stacked structure in Example 1 of the present invention. As shown in FIG. 4 , the method for preparing the laminated structure of Example 1 of the present invention includes: providing a substrate S1; applying flexographic printing technology to print a nano silver line layer on the substrate S2; And using flexographic printing technology, a metal layer is printed on the substrate and the nano silver wire layer, wherein the metal layer includes: a metal grid, which is at least partially covering the substrate and the nano silver wire layer a line layer; and a metal wire, which is connected to the metal grid S3.

本實施例之製備方法之步驟S1中所使用之基材之材料並未特別限定,舉例來說,合適之材料包含但不限於聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、環烯烴共聚物(Cyclic olefin copolymer,COP)、無色聚醯亞胺(Colorless Polyimide,CPI)、聚萘二甲酸乙二醇酯(Polyethylene naphthalate,PEN)、聚碳酸酯(Polycarbonate,PC)及聚醚碸(Polyethersulfone,PES)。 The material of the substrate used in step S1 of the preparation method of this embodiment is not particularly limited. For example, suitable materials include but are not limited to polyethylene terephthalate (polyethylene terephthalate, PET), cycloolefin Copolymer (Cyclic olefin copolymer, COP), colorless polyimide (Colorless Polyimide, CPI), polyethylene naphthalate (Polyethylene naphthalate, PEN), polycarbonate (Polycarbonate, PC) and polyether ( Polyethersulfone, PES).

本實施例之製備方法之步驟S2中係應用習知之柔版印刷技術,將一奈米銀線層印製於該基材之上。該奈米銀線層的厚度並未特別限定,只要能提供適當之導電率即可。舉例來說,該奈米銀線層的厚度可大於0.3μm。 In step S2 of the preparation method of this embodiment, a known flexographic printing technique is used to print a silver nanowire layer on the substrate. The thickness of the silver nanowire layer is not particularly limited, as long as it can provide proper conductivity. For example, the thickness of the silver nanowire layer can be greater than 0.3 μm.

本實施例之製備方法之步驟S3中係應用習知之柔版印刷技術,將一金屬層印製於該基材及該奈米銀線層之上。該金屬層的組成成分並未特別限定,只要能提供適當之導電性即可。舉例來說,該金屬層之材料可為銅、銅-鎳合金、銅-鉛合金、銀、銀-鎳合金及/或銀-鉛合金,但本發明並不限於此。 In the step S3 of the preparation method of this embodiment, a metal layer is printed on the substrate and the silver nano wire layer by using the known flexographic printing technology. The composition of the metal layer is not particularly limited, as long as it can provide proper conductivity. For example, the material of the metal layer can be copper, copper-nickel alloy, copper-lead alloy, silver, silver-nickel alloy and/or silver-lead alloy, but the invention is not limited thereto.

本實施例之製備方法之步驟S3中所印製之金屬層包含金屬網格,其係至少部分覆蓋該基材及該奈米銀線層;及金屬導線,其係與該金屬網格連接。藉由上述技術手段,本實施例之製備方法所製成之疊構結構可具有如下列實施例2中所述之結構,使其可應用於觸控感測器中。 The metal layer printed in step S3 of the preparation method of this embodiment includes a metal grid, which at least partially covers the substrate and the silver nanowire layer; and metal wires, which are connected to the metal grid. With the above-mentioned technical means, the stacked structure produced by the preparation method of this embodiment can have the structure described in the following embodiment 2, so that it can be applied to touch sensors.

在一較佳實施方式中,本實施例之製備方法所製備之疊構結構中該奈米銀線層係與該金屬網格重疊之部分之穿透度(T%)小於90%。 In a preferred embodiment, the penetration (T%) of the overlapped portion of the silver nanowire layer and the metal grid in the stacked structure prepared by the preparation method of this embodiment is less than 90%.

圖5係示例性地說明本實施例之製備方法之步驟S2及步驟S3中所應用之柔版印刷技術,但本發明並不限於此。如圖5所示,示例性之柔版印刷技術係應用供墨器2將墨水滴加於網紋輥(Anilox roller)3上,隨後藉由刮刀(doctor blade)4刮除網紋輥3上多餘的墨水。接著,網紋輥3上的墨水被轉移至印版滾筒(Plate cylinder)5上的柔版(Flexo plate)6上。最後,柔版6上的墨水被轉移至印刷物7上,以將所需之圖案印製於印刷物7上。 FIG. 5 exemplarily illustrates the flexographic printing technology used in step S2 and step S3 of the preparation method of this embodiment, but the present invention is not limited thereto. As shown in Figure 5, an exemplary flexographic printing technique uses an ink feeder 2 to drop ink onto an anilox roller 3, and then scrapes off the anilox roller 3 with a doctor blade 4 Excess ink. Next, the ink on the anilox roller 3 is transferred to a flexo plate 6 on a plate cylinder (Plate cylinder) 5 . Finally, the ink on the flexographic plate 6 is transferred to the printed matter 7 to print the desired pattern on the printed matter 7 .

實施例2 Example 2

圖6及圖7係為本發明實施例2之疊構結構之示意圖。如圖6及圖7所示,本實施例之疊構結構20,包含:一基材21(圖6中未示出);一奈米銀線層22,其係設置於該基材21之上;一金屬層23,其係設置於該基材21及該奈米銀線層22之上,其中該金屬層23包含:金屬網格231,其係至少部分覆蓋該基材21及該奈米銀線層22;及金屬導線232,其係與該金屬網格231連接。 FIG. 6 and FIG. 7 are schematic diagrams of the stacked structure of Embodiment 2 of the present invention. As shown in Figures 6 and 7, the stacked structure 20 of this embodiment includes: a base material 21 (not shown in Figure 6); a nano silver wire layer 22, which is arranged on the base material 21 On; a metal layer 23, which is disposed on the substrate 21 and the silver nanowire layer 22, wherein the metal layer 23 includes: a metal grid 231, which at least partially covers the substrate 21 and the nanowire layer Silver wire layer 22 ; and metal wire 232 connected to the metal grid 231 .

本實施例之疊構結構20係包含:一走線區域TA,其係包括該金屬導線232;一第一搭接區域25,其係包括該金屬網格231中未覆蓋該奈米銀線層22之區域;一第二搭接區域26,其係包括該金屬網格231中覆蓋該奈米銀線層22之不透光區27及鄰近該金屬網格231之相對二側之由該奈米銀線層22所覆蓋且未被該金屬網格231所覆蓋之透光區28;一可視區域VA,其係包括鄰近該金屬網格231之一側之由該奈米銀線層22所覆蓋且未被該金屬網格231所覆蓋之區域。 The stacked structure 20 of the present embodiment includes: a routing area TA, which includes the metal wire 232; a first overlapping area 25, which includes the metal grid 231 that does not cover the nano silver wire layer 22; a second overlapping area 26, which includes the opaque region 27 covering the silver nanowire layer 22 in the metal grid 231 and the metal grid 231 adjacent to the opposite sides of the metal grid 231 by the nano The light-transmitting area 28 covered by the nano silver line layer 22 and not covered by the metal grid 231; a visible area VA, which includes a side adjacent to the metal grid 231 covered by the nano silver line layer 22 The area covered and not covered by the metal grid 231 .

本實施例之疊構結構中之基材之材料並未特別限定,舉例來說,合適之材料包含但不限於聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、環烯烴共聚物(Cyclic olefin copolymer,COP)、無色聚醯亞胺(Colorless Polyimide,CPI)、聚萘二甲酸乙二醇酯(Polyethylene naphthalate,PEN)、聚碳酸酯(Polycarbonate,PC)及聚醚碸(Polyethersulfone,PES)。 The material of the substrate in the stacked structure of this embodiment is not particularly limited. For example, suitable materials include but are not limited to polyethylene terephthalate (polyethylene terephthalate, PET), cycloolefin copolymer (Cyclic Olefin copolymer, COP), colorless polyimide (Colorless Polyimide, CPI), polyethylene naphthalate (Polyethylene naphthalate, PEN), polycarbonate (Polycarbonate, PC) and polyethersulfone (Polyethersulfone, PES) .

本實施例之疊構結構中之金屬層的組成成分並未特別限定,只要能提供適當之導電性即可。舉例來說,該金屬層之材料可為銅、銅-鎳合金、銅-鉛合金、銀、銀-鎳合金及/或銀-鉛合金,但本發明並不限於此。 The composition of the metal layer in the stacked structure of this embodiment is not particularly limited, as long as it can provide proper conductivity. For example, the material of the metal layer can be copper, copper-nickel alloy, copper-lead alloy, silver, silver-nickel alloy and/or silver-lead alloy, but the invention is not limited thereto.

本實施例之疊構結構中之奈米銀線層的厚度並未特別限定,只要能提供適當之導電率即可。舉例來說,該奈米銀線層的厚度可大於0.3μm。 The thickness of the silver nanowire layer in the stacked structure of this embodiment is not particularly limited, as long as it can provide proper conductivity. For example, the thickness of the silver nanowire layer can be greater than 0.3 μm.

在一較佳實施方式中,本實施例之疊構結構中該奈米銀線層係與該金屬網格重疊之部分之穿透度(T%)小於90%。 In a preferred implementation, the penetration (T%) of the overlapping portion of the silver nanowire layer and the metal grid in the stacked structure of this embodiment is less than 90%.

在一較佳實施方式中,本實施例之疊構結構中該第二搭接區域中,該透光區所佔的比例係小於該不透光區所占的比例,且該透光區在該第二搭接區域中所佔的比例係小於50%。 In a preferred implementation manner, in the second overlapping region in the stacked structure of this embodiment, the proportion of the light-transmitting region is smaller than the proportion of the opaque region, and the light-transmitting region is within The proportion of the second overlapping area is less than 50%.

在一較佳實施方式中,本實施例之疊構結構中該第一搭接區域與該第二搭接區域的總寬度係小於500μm,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.1~10之間。 In a preferred embodiment, the total width of the first overlapping region and the second overlapping region in the stacked structure of this embodiment is less than 500 μm, and the first overlapping region and the second overlapping region The ratio of the width is between 0.1 and 10.

在一較佳實施方式中,本實施例之疊構結構中該第一搭接區域與該第二搭接區域的總寬度係介於0.5mm~1.0mm之間,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.05~20之間。 In a preferred embodiment, the total width of the first overlapping area and the second overlapping area in the stacked structure of this embodiment is between 0.5 mm and 1.0 mm, and the first overlapping area The ratio to the width of the second overlapping area is between 0.05-20.

在一較佳實施方式中,本實施例之疊構結構中該第一搭接區域與該第二搭接區域的總寬度係介於1.0mm~1.5mm之間,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.03~30之間。 In a preferred embodiment, the total width of the first overlapping area and the second overlapping area in the stacked structure of this embodiment is between 1.0 mm and 1.5 mm, and the first overlapping area The ratio to the width of the second overlapping area is between 0.03-30.

在一較佳實施方式中,本實施例之疊構結構中該第一搭接區域與該第二搭接區域的總寬度係介於1.5mm~2.5mm之間,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.02~50之間。 In a preferred embodiment, the total width of the first overlapping area and the second overlapping area in the stacked structure of this embodiment is between 1.5 mm and 2.5 mm, and the first overlapping area The ratio to the width of the second overlapping area is between 0.02-50.

在一較佳實施方式中,本實施例之疊構結構中該第一搭接區域中之金屬網格之節距係為該金屬導線之節距的0.1~10倍。 In a preferred implementation manner, the pitch of the metal grids in the first overlapping region in the stacked structure of this embodiment is 0.1-10 times the pitch of the metal wires.

在一較佳實施方式中,本實施例之疊構結構中該金屬導線之節距為20μm、線寬為10μm且線距為10μm,且該第一搭接區域中之金屬網格之節距係介於2μm~200μm之間 In a preferred implementation manner, the pitch of the metal wires in the stacked structure of this embodiment is 20 μm, the line width is 10 μm, and the line spacing is 10 μm, and the pitch of the metal grid in the first overlapping region Between 2μm~200μm

在一較佳實施方式中,該第一搭接區域中之金屬網格之線寬係介於約2μm~50μm之間,且線距係介於約2μm~10μm之間。 In a preferred embodiment, the line width of the metal grid in the first overlapping region is between about 2 μm˜50 μm, and the line pitch is between about 2 μm˜10 μm.

在一較佳實施方式中,該第一搭接區域中之金屬網格之線寬/線距係為40μm/10μm、30μm/10μm、20μm/10μm或10μm/10μm。 In a preferred embodiment, the line width/space of the metal grid in the first overlapping region is 40 μm/10 μm, 30 μm/10 μm, 20 μm/10 μm or 10 μm/10 μm.

在一較佳實施方式中,本實施例之疊構結構中該金屬導線之線寬係介於3μm~30μm之間且線距係介於3μm~30μm之間。 In a preferred implementation, the line width of the metal wires in the stacked structure of this embodiment is between 3 μm and 30 μm, and the line spacing is between 3 μm and 30 μm.

舉例來說,本實施例之疊構結構可藉由如實施例1所述之製備方法製備,但本發明並不限於此。 For example, the stacked structure of this embodiment can be prepared by the preparation method described in Embodiment 1, but the present invention is not limited thereto.

實施例3 Example 3

圖8、圖9、圖10、圖11及圖12係為本發明實施例3之疊構結構之示意圖。如圖8、圖9、圖10、圖11及圖12所示,本實施例之疊構結構30,包含:一基材31(圖8中未示出);一奈米銀線層32,其係設置於該基材31之上;一金屬層33,其係設置於該基材31及該奈米銀線層32之上,其中該金屬層33包含:金屬網格331,其係至少部分覆蓋該基材31及該奈米銀線層32;及金屬導線332,其係與該金屬網格連接331。 Fig. 8, Fig. 9, Fig. 10, Fig. 11 and Fig. 12 are schematic diagrams of the stacked structure of Embodiment 3 of the present invention. As shown in Fig. 8, Fig. 9, Fig. 10, Fig. 11 and Fig. 12, the laminated structure 30 of this embodiment includes: a base material 31 (not shown in Fig. 8); a nano silver wire layer 32, It is arranged on the substrate 31; a metal layer 33 is arranged on the substrate 31 and the silver nanowire layer 32, wherein the metal layer 33 includes: a metal grid 331, which is at least Partially covering the substrate 31 and the silver nanowire layer 32 ; and a metal wire 332 connected 331 to the metal grid.

本實施例之疊構結構30係包含:一走線區域TA,其係包括該金屬導線332;一第一搭接區域35,其係包括該金屬網格331中未覆蓋該奈米銀線層32之區域;一第二搭接區域36,其係包括該金屬網格331中覆蓋該奈米銀線層32之不透光區37及鄰近該金屬網格331之相對二側之由該奈米銀線層32所覆蓋且未被該金屬網格331所覆蓋之透光區38;一可視區域VA,其係包括鄰近該金屬網格331之一側之由該奈米銀線層32所覆蓋且未被該金屬網格331所覆蓋之區域。 The stacked structure 30 of the present embodiment includes: a routing area TA, which includes the metal wire 332; a first overlapping area 35, which includes the metal grid 331 that does not cover the nano silver wire layer 32; a second overlapping area 36, which includes the opaque region 37 covering the silver nano wire layer 32 in the metal grid 331 and the metal grid 331 adjacent to the opposite sides of the metal grid 331 by the nano The light-transmitting area 38 covered by the nano-silver wire layer 32 and not covered by the metal grid 331; a visible area VA, which includes a side adjacent to the metal grid 331 covered by the nano-silver wire layer 32 The area covered and not covered by the metal grid 331 .

相較於實施例2,本實施例之疊構結構30進一步包含:一接合墊39,其係設置於該基材31之上,包括:接合金屬網格331'。 Compared with Embodiment 2, the stacked structure 30 of this embodiment further includes: a bonding pad 39 disposed on the base material 31 , including: a bonding metal grid 331 ′.

本實施例之接合墊可作為與外部電路連接之接點。 The bonding pads in this embodiment can be used as contacts for connecting with external circuits.

舉例來說,本實施例之疊構結構可藉由如實施例1所述之製備方法製備,但本發明並不限於此。在此情況下,可在單一柔版印刷步驟中同時印製本實施例之疊構結構中的金屬層及接合墊。 For example, the stacked structure of this embodiment can be prepared by the preparation method described in Embodiment 1, but the present invention is not limited thereto. In this case, the metal layer and bonding pads in the stacked structure of this embodiment can be printed simultaneously in a single flexographic printing step.

實施例4 Example 4

圖13係為本發明實施例4之觸控感測器及其製備流程之示意圖。如圖13所示,本實施例之觸控感測器40'係具有如實施例2所述之疊構結構40。 FIG. 13 is a schematic diagram of a touch sensor and its manufacturing process according to Embodiment 4 of the present invention. As shown in FIG. 13 , the touch sensor 40 ′ of this embodiment has the stacked structure 40 as described in the second embodiment.

本實施例之觸控感測器40'中的疊構結構40,包含:一基材41;一奈米銀線層42,其係設置於該基材41之上;一金屬層43,其係設置於該基材41及該奈米銀線層42之上,其中該金屬層43包含:金屬網格431,其係至少部分覆蓋該基材41及該奈米銀線層42;及金屬導線432,其係與該金屬網格431連接。 The stacked structure 40 in the touch sensor 40' of this embodiment includes: a base material 41; a silver nanowire layer 42, which is arranged on the base material 41; a metal layer 43, which It is arranged on the substrate 41 and the silver nanowire layer 42, wherein the metal layer 43 includes: a metal grid 431, which at least partially covers the substrate 41 and the silver nanowire layer 42; and metal The wire 432 is connected with the metal grid 431 .

本實施例之觸控感測器40'中的疊構結構40係包含:一走線區域TA,其係包括該金屬導線432;一第一搭接區域45,其係包括該金屬網格431中未覆蓋該奈米銀線層42之區域;一第二搭接區域46,其係包括該金屬網格431中覆蓋該奈米銀線層42之不透光區及鄰近該金屬網格431之相對二側之由該奈米銀線層42所覆蓋且未被該金屬網格431所覆蓋之透光區;一可視區域VA,其係包括鄰近該金屬網格431之一側之由該奈米銀線層42所覆蓋且未被該金屬網格431所覆蓋之區域。 The stacked structure 40 in the touch sensor 40' of this embodiment includes: a wiring area TA, which includes the metal wire 432; a first overlapping area 45, which includes the metal grid 431 The region that does not cover the silver nanowire layer 42; a second overlapping region 46, which includes the opaque area covering the silver nanowire layer 42 in the metal grid 431 and adjacent to the metal grid 431 The light-transmitting area covered by the silver nano wire layer 42 and not covered by the metal grid 431 on the opposite two sides; a visible area VA, which includes the side adjacent to the metal grid 431 and covered by the metal grid 431 The area covered by the silver nanowire layer 42 and not covered by the metal grid 431 .

相較於實施例2,本實施例之觸控感測器40'係進一步包含一覆蓋層47,其係設置於該金屬層43之上。 Compared with Embodiment 2, the touch sensor 40 ′ of this embodiment further includes a cover layer 47 disposed on the metal layer 43 .

如圖13所示,本實施例之觸控感測器40'之一示例性製備流程係包括提供一基材41;應用柔版印刷技術,將一奈米銀線層42印製於該基材41之 上;應用柔版印刷技術,將一金屬層43印製於該基材41及該奈米銀線層42之上,其中該金屬層43包含:金屬網格431,其係至少部分覆蓋該基材41及該奈米銀線層42;及金屬導線432,其係與該金屬網格431連接;以及於該金屬層43之上設置一覆蓋層47。 As shown in FIG. 13 , an exemplary manufacturing process of the touch sensor 40' of this embodiment includes providing a substrate 41; applying flexographic printing technology to print a silver nanowire layer 42 on the substrate. Material 41 On; using flexographic printing technology, a metal layer 43 is printed on the substrate 41 and the silver nanowire layer 42, wherein the metal layer 43 includes: a metal grid 431, which is at least partially covering the substrate material 41 and the silver nanowire layer 42; and metal wires 432 connected to the metal grid 431; and a covering layer 47 is set on the metal layer 43.

實施例5 Example 5

圖14係為本發明實施例5之觸控感測器及其製備流程之示意圖。如圖14所示,本實施例之觸控感測器50'係具有如實施例2所述之疊構結構50。 FIG. 14 is a schematic diagram of a touch sensor and its manufacturing process according to Embodiment 5 of the present invention. As shown in FIG. 14 , the touch sensor 50 ′ of this embodiment has the stacked structure 50 as described in the second embodiment.

本實施例之觸控感測器50'中的疊構結構50,包含:一基材51;一奈米銀線層52,其係設置於該基材51之上;一金屬層53,其係設置於該基材51及該奈米銀線層52之上,其中該金屬層53包含:金屬網格531,其係至少部分覆蓋該基材51及該奈米銀線層52;及金屬導線532,其係與該金屬網格531連接。 The stacked structure 50 in the touch sensor 50' of this embodiment includes: a substrate 51; a silver nanowire layer 52 disposed on the substrate 51; a metal layer 53, which It is disposed on the substrate 51 and the silver nanowire layer 52, wherein the metal layer 53 includes: a metal grid 531, which at least partially covers the substrate 51 and the silver nanowire layer 52; and metal The wire 532 is connected with the metal grid 531 .

本實施例之觸控感測器50'中的疊構結構50係包含:一走線區域TA,其係包括該金屬導線532;一第一搭接區域55,其係包括該金屬網格531中未覆蓋該奈米銀線層52之區域;一第二搭接區域56,其係包括該金屬網格531中覆蓋該奈米銀線層52之不透光區及鄰近該金屬網格531之相對二側之由該奈米銀線層52所覆蓋且未被該金屬網格531所覆蓋之透光區;一可視區域VA,其係包括鄰近該金屬網格531之一側之由該奈米銀線層52所覆蓋且未被該金屬網格531所覆蓋之區域。 The stacked structure 50 in the touch sensor 50' of this embodiment includes: a trace area TA, which includes the metal wire 532; a first overlapping area 55, which includes the metal grid 531 The region that does not cover the silver nanowire layer 52; a second overlapping region 56, which includes the opaque region covering the silver nanowire layer 52 in the metal grid 531 and adjacent to the metal grid 531 The light-transmitting area covered by the silver nano wire layer 52 and not covered by the metal grid 531 on the opposite two sides; a visible area VA, which includes the side adjacent to the metal grid 531 and covered by the metal grid 531 The area covered by the silver nano wire layer 52 and not covered by the metal grid 531 .

相較於實施例2,本實施例之觸控感測器50'係進一步包含一覆蓋層57,其係設置於該金屬層53之上。 Compared with Embodiment 2, the touch sensor 50 ′ of this embodiment further includes a cover layer 57 disposed on the metal layer 53 .

相較於實施例4,本實施例之觸控感測器50'又進一步包含:一第二奈米銀線層52',其係設置於如上所述之疊構結構中的基材51之下;一第二金屬層53',其係設置於該基材51及該第二奈米銀線層52'之下,其中該第二金屬層53'包含:第二金屬網格531',其係至少部分覆蓋該基材51及該第二奈米銀線層52';及第二金屬導線532',其係與該第二金屬網格531'連接;以及一第二覆蓋層57',其係設置於該第二金屬層53'之下。 Compared with Embodiment 4, the touch sensor 50' of this embodiment further includes: a second nano silver wire layer 52', which is disposed on the substrate 51 in the above-mentioned stacked structure Below; a second metal layer 53', which is disposed under the substrate 51 and the second nano silver wire layer 52', wherein the second metal layer 53' includes: a second metal grid 531', It is at least partially covering the substrate 51 and the second nano silver wire layer 52'; and the second metal wire 532', which is connected to the second metal grid 531'; and a second covering layer 57' , which is disposed under the second metal layer 53'.

如圖14所示,本實施例之觸控感測器50'之一示例性製備流程係包括提供一基材51;應用柔版印刷技術,同時將一奈米銀線層52以及一第二奈米銀線層52'印製於該基材51的二側;應用柔版印刷技術,同時將一金屬層53印製於該基材51及該奈米銀線層52之上,且將一第二金屬層53'印製於該基材51及該第二奈米銀線層52'之下,其中該金屬層53包含:金屬網格531,其係至少部分覆蓋該基材51及該奈米銀線層52;及金屬導線532,其係與該金屬網格531連接,且該第二金屬層53'包含:第二金屬網格531',其係至少部分覆蓋該基材51及該第二奈米銀線層52';及第二金屬導線532',其係與該第二金屬網格531'連接;以及於該金屬層53之上設置一覆蓋層57,且於該第二金屬層53'之下設置一第二覆蓋層57'。 As shown in FIG. 14 , an exemplary manufacturing process of the touch sensor 50' of this embodiment includes providing a substrate 51; applying flexographic printing technology, and simultaneously applying a nano silver wire layer 52 and a second The silver nano wire layer 52' is printed on both sides of the base material 51; a metal layer 53 is printed on the base material 51 and the silver nano wire layer 52 at the same time using flexographic printing technology, and the A second metal layer 53' is printed under the substrate 51 and the second nano silver wire layer 52', wherein the metal layer 53 includes: a metal grid 531 at least partially covering the substrate 51 and The silver nanowire layer 52; and metal wires 532, which are connected to the metal grid 531, and the second metal layer 53' includes: a second metal grid 531', which at least partially covers the substrate 51 and the second nano silver wire layer 52'; and the second metal wire 532', which is connected to the second metal grid 531'; and a covering layer 57 is set on the metal layer 53, and on the A second covering layer 57' is disposed under the second metal layer 53'.

綜合上述,本發明之疊構結構之製備方法、疊構結構及觸控感應器至少具有下列優異的技術效果: Based on the above, the preparation method of the laminated structure, the laminated structure and the touch sensor of the present invention have at least the following excellent technical effects:

1.本發明之疊構結構之製備方法係應用柔版印刷技術印製奈米銀線層,再應用柔版印刷技術印製金屬層,可完全免除傳統上較為繁瑣及昂貴的黃光蝕刻製程。藉此,疊構結構之製備方法可簡化疊構結構之製程,降 低疊構結構之製備成本。本發明之疊構結構之製備方法可應用於觸控感應器之製程中,藉此降低包含該疊構結構之觸控感應器之製備成本。 1. The preparation method of the laminated structure of the present invention is to use flexographic printing technology to print the nano-silver wire layer, and then use flexographic printing technology to print the metal layer, which can completely avoid the traditional cumbersome and expensive yellow photoetching process . In this way, the preparation method of the stacked structure can simplify the manufacturing process of the stacked structure and reduce the Low fabrication cost of stacked structure. The preparation method of the stacked structure of the present invention can be applied in the manufacturing process of the touch sensor, thereby reducing the manufacturing cost of the touch sensor including the stacked structure.

2.本發明之疊構結構之金屬層包含金屬網格,使本發明之疊構結構及包含該疊構結構之觸控感應器於第一搭接區域及第二搭接區域具有獨特的疊構設計。相較於傳統之金屬片材,金屬網格可減少金屬原料之消耗,以降低疊構結構及包含該疊構結構之觸控感應器之製備成本,藉此可實現超窄邊框(square)的觸控感應器。 2. The metal layer of the stacked structure of the present invention includes a metal grid, so that the stacked structure of the present invention and the touch sensor comprising the stacked structure have a unique stacking area in the first overlapping area and the second overlapping area. structural design. Compared with the traditional metal sheet, the metal grid can reduce the consumption of metal raw materials, so as to reduce the manufacturing cost of the stacked structure and the touch sensor including the stacked structure, so as to realize the ultra-narrow frame (square) touch sensor.

上述實施例僅例示性說明本發明,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修飾與改變。因此,本發明之權利保護範圍,應如後述之申請專利範圍所載。 The above-mentioned embodiments are only illustrative of the present invention, not intended to limit the present invention. Anyone skilled in the art can make modifications and changes to the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be set forth in the scope of patent application described later.

S1:步驟 S1: step

S2:步驟 S2: step

S3:步驟 S3: step

Claims (13)

一種疊構結構之製備方法,包含:提供一基材;應用柔版印刷技術,將一奈米銀線層印製於該基材之上;以及應用柔版印刷技術,將一金屬層印製於該基材及該奈米銀線層之上,其中該金屬層包含:金屬網格,其係至少部分覆蓋該基材及該奈米銀線層;及金屬導線,其係與該金屬網格連接;其中,該疊構結構係包含:一走線區域,其係包括該金屬導線;一第一搭接區域,其係包括該金屬網格中未覆蓋該奈米銀線層之區域;一第二搭接區域,其係包括該金屬網格中覆蓋該奈米銀線層之不透光區及鄰近該金屬網格之相對二側之由該奈米銀線層所覆蓋且未被該金屬網格所覆蓋之透光區;一可視區域,其係包括鄰近該金屬網格之一側之由該奈米銀線層所覆蓋且未被該金屬網格所覆蓋之區域。 A method for preparing a laminated structure, comprising: providing a base material; applying a flexographic printing technique to print a nano silver wire layer on the base material; and applying a flexographic printing technique to print a metal layer On the base material and the silver nano wire layer, wherein the metal layer comprises: a metal grid, which at least partially covers the base material and the silver nano wire layer; and a metal wire, which is connected with the metal grid grid connection; wherein, the laminated structure includes: a routing area, which includes the metal wire; a first overlapping area, which includes the area of the metal grid that does not cover the nano silver wire layer; A second overlapping area, which includes the opaque area covering the silver nanowire layer in the metal grid and the two opposite sides adjacent to the metal grid that are covered by the silver nanowire layer and not covered by the silver nanowire layer A light-transmitting area covered by the metal grid; a visible area, which includes an area adjacent to one side of the metal grid that is covered by the nano-silver wire layer and not covered by the metal grid. 如請求項1所述之製備方法,其中,該金屬層之材料係選自由銅、銅-鎳合金、銅-鉛合金、銀、銀-鎳合金及銀-鉛合金所組成之群組。 The preparation method according to claim 1, wherein the material of the metal layer is selected from the group consisting of copper, copper-nickel alloy, copper-lead alloy, silver, silver-nickel alloy and silver-lead alloy. 如請求項1所述之製備方法,其中,該基材之材料係選自由聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、環烯烴共聚物(Cyclic olefin copolymer,COP)、無色聚醯亞胺(Colorless Polyimide,CPI)、聚萘二甲酸乙二醇酯(Polyethylene naphthalate,PEN)、聚碳酸酯(Polycarbonate,PC)及聚醚碸(Polyethersulfone,PES)所組成之群組。 The preparation method as described in Claim 1, wherein the material of the substrate is selected from polyethylene terephthalate (PET), cycloolefin copolymer (Cyclic olefin copolymer, COP), colorless polyamide A group consisting of Colorless Polyimide (CPI), Polyethylene naphthalate (PEN), Polycarbonate (PC) and Polyethersulfone (PES). 如請求項1所述之製備方法,其中,該奈米銀線層之厚度係大於0.3μm。 The preparation method according to claim 1, wherein the thickness of the silver nanowire layer is greater than 0.3 μm. 一種疊構結構,包含:一基材;一奈米銀線層,其係設置於該基材之上;一金屬層,其係設置於該基材及該奈米銀線層之上,其中該金屬層包含:金屬網格,其係至少部分覆蓋該基材及該奈米銀線層;及金屬導線,其係與該金屬網格連接,其中,該疊構結構係包含:一走線區域,其係包括該金屬導線;一第一搭接區域,其係包括該金屬網格中未覆蓋該奈米銀線層之區域;一第二搭接區域,其係包括該金屬網格中覆蓋該奈米銀線層之不透光區及鄰近該金屬網格之相對二側之由該奈米銀線層所覆蓋且未被該金屬網格所覆蓋之透光區;一可視區域,其係包括鄰近該金屬網格之一側之由該奈米銀線層所覆蓋且未被該金屬網格所覆蓋之區域。 A stacked structure, comprising: a substrate; a silver nanowire layer, which is arranged on the substrate; a metal layer, which is arranged on the substrate and the silver nanowire layer, wherein The metal layer includes: a metal grid, which at least partially covers the substrate and the silver nanowire layer; and a metal wire, which is connected to the metal grid, wherein the stacked structure includes: a wiring Area, which includes the metal wire; a first overlapping area, which includes the area of the metal grid that does not cover the silver nanowire layer; a second overlapping area, which includes the metal grid an opaque area covering the silver nanowire layer and a light-transmitting area covered by the silver nanowire layer and not covered by the metal grid adjacent to opposite sides of the metal grid; a visible area, It includes an area adjacent to one side of the metal grid that is covered by the nano-silver wire layer and not covered by the metal grid. 如請求項5所述之疊構結構,其中,該第二搭接區域中,該透光區所佔的比例係小於該不透光區所占的比例,且該透光區在該第二搭接區域中所佔的比例係小於50%。 The laminated structure according to claim 5, wherein, in the second overlapping region, the proportion of the transparent area is smaller than the proportion of the opaque area, and the transparent area is in the second overlapping area. The proportion of the overlapping area is less than 50%. 如請求項5所述之疊構結構,其中,該第一搭接區域與該第二搭接區域的總寬度係小於500μm,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.1~10之間。 The laminated structure according to claim 5, wherein the total width of the first overlapping region and the second overlapping region is less than 500 μm, and the width of the first overlapping region and the second overlapping region The ratio is between 0.1 and 10. 如請求項5所述之疊構結構,其中,該第一搭接區域與該第二搭接區域的總寬度係介於1.5mm~2.5mm之間,且該第一搭接區域與該第二搭接區域的寬度的比值係介於0.02~50之間。 The laminated structure according to claim 5, wherein, the total width of the first overlapping area and the second overlapping area is between 1.5 mm and 2.5 mm, and the first overlapping area and the second overlapping area The ratio of the widths of the two overlapping areas is between 0.02-50. 如請求項5所述之疊構結構,其中,該第一搭接區域中之金屬網格之節距係為該金屬導線之節距的0.1~10倍。 The stacked structure according to claim 5, wherein the pitch of the metal grid in the first overlapping region is 0.1-10 times the pitch of the metal wire. 如請求項5所述之疊構結構,其中,該金屬導線之線寬係介於3μm~30μm之間且線距係介於3μm~30μm之間。 The laminated structure as claimed in item 5, wherein the line width of the metal wire is between 3 μm and 30 μm and the line pitch is between 3 μm and 30 μm. 如請求項5所述之疊構結構,其中,進一步包含:一接合墊,其係設置於該基材之上,包括:接合金屬網格。 The stacked structure according to claim 5, further comprising: a bonding pad disposed on the substrate, including: a bonding metal grid. 一種觸控感測器,包含:如請求項5至11項中任一項所述之疊構結構;以及一覆蓋層,其係設置於如請求項5至11項中任一項所述之疊構結構中的金屬層之上。 A touch sensor, comprising: a stacked structure as described in any one of claims 5 to 11; and a covering layer, which is arranged on the over the metal layers in the stacked structure. 如請求項12所述之觸控感測器,進一步包含:一第二奈米銀線層,其係設置於如請求項5至11項中任一項所述之疊構結構中的基材之下;一第二金屬層,其係設置於該基材及該第二奈米銀線層之下,其中該第二金屬層包含:第二金屬網格,其係至少部分覆蓋該基材及該第二奈米銀線層;及第二金屬導線,其係與該第二金屬網格連接;以及 一第二覆蓋層,其係設置於該第二金屬層之下。 The touch sensor as described in claim 12, further comprising: a second silver nanowire layer, which is disposed on the substrate in the stacked structure as described in any one of claims 5 to 11 Below; a second metal layer, which is disposed under the substrate and the second nano silver wire layer, wherein the second metal layer comprises: a second metal grid, which at least partially covers the substrate and the second silver nanowire layer; and a second metal wire connected to the second metal grid; and A second covering layer is disposed under the second metal layer.
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