CN114257194A - 薄膜体声波谐振器、其制造方法及滤波器 - Google Patents
薄膜体声波谐振器、其制造方法及滤波器 Download PDFInfo
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- CN114257194A CN114257194A CN202010995766.3A CN202010995766A CN114257194A CN 114257194 A CN114257194 A CN 114257194A CN 202010995766 A CN202010995766 A CN 202010995766A CN 114257194 A CN114257194 A CN 114257194A
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- piezoelectric layer
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H9/02—Details
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
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- H—ELECTRICITY
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- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
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- H—ELECTRICITY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/588—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/028—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired values of other parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
- H03H2009/02188—Electrically tuning
- H03H2009/02196—Electrically tuning operating on the FBAR element, e.g. by direct application of a tuning DC voltage
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010995766.3A CN114257194A (zh) | 2020-09-21 | 2020-09-21 | 薄膜体声波谐振器、其制造方法及滤波器 |
PCT/CN2021/109531 WO2022057466A1 (fr) | 2020-09-21 | 2021-07-30 | Résonateur acoustique de volume à film, son procédé de fabrication et filtre |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010995766.3A CN114257194A (zh) | 2020-09-21 | 2020-09-21 | 薄膜体声波谐振器、其制造方法及滤波器 |
Publications (1)
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CN114257194A true CN114257194A (zh) | 2022-03-29 |
Family
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CN202010995766.3A Pending CN114257194A (zh) | 2020-09-21 | 2020-09-21 | 薄膜体声波谐振器、其制造方法及滤波器 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN114257194A (fr) |
WO (1) | WO2022057466A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117375568A (zh) * | 2023-12-07 | 2024-01-09 | 常州承芯半导体有限公司 | 体声波谐振装置及体声波谐振装置的形成方法 |
CN117439569A (zh) * | 2023-12-19 | 2024-01-23 | 武汉敏声新技术有限公司 | 一种薄膜体声波谐振器及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005045694A (ja) * | 2003-07-25 | 2005-02-17 | Sony Corp | 薄膜バルク音響共振子およびその製造方法 |
US9608592B2 (en) * | 2014-01-21 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (FBAR) having stress-relief |
CN111130486A (zh) * | 2019-12-11 | 2020-05-08 | 北京汉天下微电子有限公司 | 一种薄膜体声波谐振器结构及其制造方法、滤波器以及双工器 |
CN111082777B (zh) * | 2019-12-31 | 2021-03-12 | 诺思(天津)微系统有限责任公司 | 底电极为空隙电极的体声波谐振器、滤波器及电子设备 |
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2020
- 2020-09-21 CN CN202010995766.3A patent/CN114257194A/zh active Pending
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2021
- 2021-07-30 WO PCT/CN2021/109531 patent/WO2022057466A1/fr active Application Filing
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117375568A (zh) * | 2023-12-07 | 2024-01-09 | 常州承芯半导体有限公司 | 体声波谐振装置及体声波谐振装置的形成方法 |
CN117375568B (zh) * | 2023-12-07 | 2024-03-12 | 常州承芯半导体有限公司 | 体声波谐振装置及体声波谐振装置的形成方法 |
CN117439569A (zh) * | 2023-12-19 | 2024-01-23 | 武汉敏声新技术有限公司 | 一种薄膜体声波谐振器及其制备方法 |
CN117439569B (zh) * | 2023-12-19 | 2024-03-29 | 武汉敏声新技术有限公司 | 一种薄膜体声波谐振器及其制备方法 |
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