CN114256580A - Power divider/synthesizer based on novel T waveguide - Google Patents
Power divider/synthesizer based on novel T waveguide Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
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Abstract
The invention belongs to the technical field of millimeter wave power synthesis, and particularly provides a novel T-waveguide-based power distribution/synthesis device, which is suitable for the field of waveguide multi-path power distribution/synthesis of broadband millimeter wave high power. The invention comprises the following steps: n-level 180-degree waveguide power divider and 2nAnd the waveguide-microstrip transition structure is arranged at the wave crest of an electromagnetic field of a T-shaped waveguide main mode. Compared with the traditional structure, the single-mode transmission bandwidth of the T waveguide is wider than that of the rectangular waveguide, the size of the T waveguide is smaller than that of the rectangular waveguide and the structure is more compact under the same working frequency, and the T waveguide has lower loss and better circuit realizability than a double-ridge waveguide; in conclusion, the novel T waveguide-based power divider/synthesizer provided by the invention is particularly suitable for the field of broadband millimeter wave high-power synthesis.
Description
Technical Field
The invention belongs to the technical field of millimeter wave power synthesis, relates to a power divider/synthesizer, and particularly provides a novel T waveguide-based power divider/synthesizer.
Background
With the continuous development of electromagnetic spectrum resources, millimeter waves have become research hotspots in the fields of radar, communication, navigation and the like due to the characteristics of high resolution, large information capacity, good anti-interference performance, wide available spectrum range and the like, and have great application value and market application prospect. The millimeter wave power amplifier is an important component in a millimeter wave system, and the output power of the millimeter wave power amplifier has an important influence on the system performance; in general, millimeter wave high power amplifiers have two main forms: a vacuum tube power amplifier and a solid state power amplifier; compared with a vacuum tube power amplifier, the solid-state power amplifier has the advantages of larger bandwidth, better linearity and simple structure, can be improved by several orders of magnitude in the aspects of size, weight, low-voltage power supply requirement and the like, but is limited by the characteristics of the existing semiconductor physical device, and the power level of a single solid-state device is limited. Therefore, in order to achieve high power output, power combining techniques in combination with multiple solid state power amplifiers is an efficient way.
Dividing one path of signal into a plurality of paths by using a power synthesis technology, respectively amplifying the paths of signals, and synthesizing and outputting the amplified paths of signals, thereby realizing the multiplication of output power; in the high power synthesis technology, the most critical is the single mode guided wave transmission system requiring multipath, broadband, low loss and high power capacity and various microwave elements based on the guided wave system, such as power divider, synthesizer, microstrip to waveguide transition, etc., generally, the single mode bandwidth of the microwave element is smaller than that of the guided wave system. Therefore, the premise of promoting the broadband is to research a novel single-mode guided wave transmission system.
The hollow metal guided wave system has advantages in high-frequency broadband and low-loss power synthesis, and is mainly realized by rectangular waveguide and ridge waveguide at present; the adoption of the rectangular waveguide can realize the full waveguide bandwidth, the relative bandwidth is about 40 percent, such as the Ku frequency band (12-18 GHz); if the double-ridge waveguide is adopted, the bandwidth of 6-18GHz can be realized. The broadband microwave and millimeter wave high-power synthesizer based on the rectangular waveguide has a simple structure, but the bandwidth is limited by the single-mode bandwidth; the double-ridge waveguide has broadband characteristics, but the structure is inconvenient to process, the power handling capability is poor, and the loss is large; based on the technical scheme, the invention provides a novel T waveguide-based power divider/combiner.
Disclosure of Invention
The invention aims to provide a novel T waveguide-based power distribution/synthesis device, which is suitable for the field of broadband millimeter wave high-power waveguide multi-path power distribution/synthesis. The invention provides a novel T waveguide structure, wherein a single-mode working bandwidth of the novel T waveguide structure is larger than that of a rectangular waveguide, and the novel T waveguide structure has a tighter size than that of the rectangular waveguide under the same working frequency, is simpler than a double-ridge waveguide structure, is easy to process and has smaller processing loss; and the power divider/combiner is constructed in a binary combination manner based on the novel T waveguide structure.
In order to achieve the purpose, the invention adopts the technical scheme that:
a novel T-waveguide based power splitter/combiner comprising: n-level 180-degree waveguide power divider and 2n+1 waveguide-microstrip transition structures, the n-level 180-degree waveguide power dividers are cascaded by adopting a binary structure, and the waveguide-microstrip transition structures are correspondingly connected to 1 power synthesis port and 2nA power distribution port, n is a positive integer not less than 2; the 180-degree waveguide power divider is characterized in that the 180-degree waveguide power divider is formed by adopting T-shaped waveguides, and the waveguide-microstrip transition structure is arranged at the electromagnetic field wave crest of a T-shaped waveguide main mode.
Furthermore, the T waveguide-microstrip transition structure is an E-plane microstrip probe structure.
Further, the 180-degree waveguide power divider is provided with a resistance diaphragm and is located at the center of an H-plane of a main transmission T-shaped waveguide branch port of the 180-degree waveguide power divider, so as to improve the isolation between two output ports of the 180-degree waveguide power divider.
Furthermore, when the novel T-waveguide-based power divider/synthesizer works as a divider, TEM mode signals excite TE in the T-shaped waveguide through the waveguide-microstrip transition structure10The mode signal is divided into 2 by an n-stage 180-degree waveguide power dividernEach path of signal is coupled into a TEM mode signal for output after passing through the waveguide-microstrip transition structure again, so that power equal-amplitude in-phase distribution is realized; when the power divider/synthesizer based on the novel T waveguide works as a synthesizer, 2nThe TEM mode signal passes through the waveguide-microstrip transition structure in T-shaped waveIn-lead exciter 2nRoad TE10And the mode signals are synthesized into 1 path through an n-level 180-degree waveguide synthesizer, and the path of signals are coupled into TEM mode signals to be output after passing through a waveguide-microstrip transition structure again, so that power equal-amplitude in-phase synthesis is realized.
It should be noted that: the T-shaped waveguide in the invention is shown in FIG. 2 and defined as: any section perpendicular to the propagation direction is a T-shaped waveguide.
The invention has the beneficial effects that:
the invention provides a power divider/synthesizer based on a novel T waveguide, which is characterized in that a 180-degree waveguide power divider is formed based on the novel T waveguide, and a binary waveguide power divider/synthesizer is formed by a plurality of stages of 180-degree waveguide power dividers; compared with the traditional power divider/synthesizer based on the rectangular waveguide or the double-ridge waveguide, the invention has the advantages that: 1. TE (transverse transition) pair-master mode of T waveguide10The mode has the effect of widening the wide side of the rectangular waveguide, so that the cut-off wavelength of the main mode is increased, and the single-mode transmission bandwidth of the T waveguide is wider than that of the rectangular waveguide; 2. under the same working frequency, the size of the T waveguide is smaller than that of the rectangular waveguide, and the structure is more compact; 3. the T waveguide is simple in structure, in the processing process, the T waveguide only needs to be cut once, the double-ridge waveguide needs to be cut twice, the more times of cutting are, the larger the loss is, and therefore the T waveguide has lower loss and better circuit realizability than the double-ridge waveguide; based on the technical scheme, the power divider/synthesizer based on the novel T waveguide is particularly suitable for the field of broadband millimeter wave high-power synthesis.
Drawings
Fig. 1 is a schematic structural diagram of a power divider/combiner based on a novel T waveguide according to the present invention.
Fig. 2 is a schematic diagram of the novel T waveguide in the power divider/combiner based on the novel T waveguide according to the present invention.
Fig. 3 is a schematic diagram of a 180 ° T waveguide power divider in the novel T waveguide-based power divider/combiner of the present invention.
Fig. 4 is a schematic diagram of a T waveguide-microstrip structure in the novel T waveguide-based power splitter/combiner of the present invention.
Fig. 5 is a schematic diagram of a power splitter/combiner based on a novel T waveguide applied to a power combining circuit.
Fig. 6 is a graph of the power divider/combiner based on the novel T waveguide applied to a power combining circuit.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The present embodiment provides a power divider/combiner based on a novel T waveguide, as shown in fig. 1, a 2-stage 180 ° waveguide power divider 1 and 5 waveguide-microstrip transition structures 2 are adopted to implement equal-amplitude in-phase power distribution from a combining port Q1 to branch ports P1 to P4, and power combination from branch ports P1 to P4 to a combining port Q1; more specifically:
the T-shaped waveguide is shown in FIG. 2, and the structure has a special cross section, namely, any cross section is T-shaped; further, a 180 ° waveguide power divider formed based on the T-shaped waveguide is shown in fig. 3, and the basic structure thereof is similar to that of a conventional 180 ° waveguide power divider based on a rectangular waveguide, with the only difference that: any section of the transmission device perpendicular to the propagation direction is T-shaped; the 180-degree waveguide power divider is provided with a resistance diaphragm 3, is positioned at the center of an H surface of a main transmission T-shaped waveguide branch port of the 180-degree waveguide power divider and is used for improving the isolation of two output ports of the 180-degree waveguide power divider;
the waveguide-microstrip transition structure adopts an E-plane microstrip probe structure, as shown in fig. 4, which is disposed at the input and output ends of the 2-stage 180-degree waveguide power divider and inserted at the electromagnetic field peak of the T-shaped waveguide main mode.
In this embodiment, the power divider/combiner operates in a frequency band of 10.2 to 18.8GHz, and the combining port Q1 and the branch ports P1 to P4 are 50-ohm microstrip lines; the power distribution and synthesis can be realized by butting the branch ports of the pair of power distribution/synthesis devices back to back, and the power distribution/synthesis device can be used in a power synthesis amplifier, as shown in fig. 5; respectively connecting 50 ohm microstrip lines of branch ports P1-P4 of the two power dividers/synthesizers, subsequently connecting power amplifiers in a back-to-back structure to amplify the constant-amplitude in-phase signals distributed by the power dividers, and transmitting the amplified constant-amplitude in-phase signals to each input end of the power synthesizers by using the 50 ohm microstrip lines to realize signal power synthesis output; the S parameter of the back-to-back structure is shown in fig. 6, and in the range of 10.2 to 18.8GHz, the return loss of the port is less than-15 dB, the insertion loss is less than 0.8dB, that is, the relative bandwidth of the power combiner/distributor is 59.3% and the single-side loss is less than 0.4 dB; the invention has the characteristics of ultra wide band and low loss, and has great application value in the millimeter wave broadband power synthesis circuit.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (4)
1. A novel T-waveguide based power splitter/combiner comprising: n-level 180-degree waveguide power divider and 2n+1 waveguide-microstrip transition structures, the n-level 180-degree waveguide power dividers are cascaded by adopting a binary structure, and the waveguide-microstrip transition structures are correspondingly connected to 1 power synthesis port and 2nA power distribution port, n is a positive integer not less than 2; the 180-degree waveguide power divider is characterized in that the 180-degree waveguide power divider is formed by adopting T-shaped waveguides, and the waveguide-microstrip transition structure is arranged at the electromagnetic field wave crest of a T-shaped waveguide main mode.
2. The novel T-waveguide based power splitter/combiner as claimed in claim 1, wherein said T-waveguide-microstrip transition structure is an E-plane microstrip probe structure.
3. The power splitter/combiner based on the novel T-waveguide as claimed in claim 1, wherein the 180 ° waveguide power divider is provided with a resistive diaphragm and is located at the center of the H-plane of the main transmission T-shaped waveguide branch port of the 180 ° waveguide power divider.
4. The novel T-waveguide based power splitter/combiner as claimed in claim 1, wherein when the novel T-waveguide based power splitter/combiner is operated as a splitter, the TEM mode signal excites TE in the T-shaped waveguide through the waveguide-microstrip transition structure10The mode signal is divided into 2 by an n-stage 180-degree waveguide power dividernEach path of signal is coupled into a TEM mode signal for output after passing through the waveguide-microstrip transition structure again, so that power equal-amplitude in-phase distribution is realized; when the power divider/synthesizer based on the novel T waveguide works as a synthesizer, 2nThe TEM mode signal is excited in the T-shaped waveguide by the waveguide-microstrip transition structure to obtain 2nRoad TE10And the mode signals are synthesized into 1 path through an n-level 180-degree waveguide synthesizer, and the path of signals are coupled into TEM mode signals to be output after passing through a waveguide-microstrip transition structure again, so that power equal-amplitude in-phase synthesis is realized.
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| CN202111374440.XA CN114256580A (en) | 2021-11-19 | 2021-11-19 | Power divider/synthesizer based on novel T waveguide |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114785300A (en) * | 2022-06-22 | 2022-07-22 | 成都浩翼创想科技有限公司 | 220GHZ power amplifier |
| CN117254234A (en) * | 2023-11-20 | 2023-12-19 | 南京纳特通信电子有限公司 | High-power waveguide conversion device, chip and power amplifier |
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2021
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Cited By (4)
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|---|---|---|---|---|
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Application publication date: 20220329 |