CN114256049B - 等离子体处理装置和等离子体生成方法 - Google Patents

等离子体处理装置和等离子体生成方法 Download PDF

Info

Publication number
CN114256049B
CN114256049B CN202111079857.3A CN202111079857A CN114256049B CN 114256049 B CN114256049 B CN 114256049B CN 202111079857 A CN202111079857 A CN 202111079857A CN 114256049 B CN114256049 B CN 114256049B
Authority
CN
China
Prior art keywords
plasma
capacitive element
metal window
chamber
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202111079857.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN114256049A (zh
Inventor
齐藤均
町山弥
佐佐木和男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN114256049A publication Critical patent/CN114256049A/zh
Application granted granted Critical
Publication of CN114256049B publication Critical patent/CN114256049B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN202111079857.3A 2020-09-23 2021-09-15 等离子体处理装置和等离子体生成方法 Active CN114256049B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020159058A JP7446190B2 (ja) 2020-09-23 2020-09-23 プラズマ処理装置及びプラズマ生成方法
JP2020-159058 2020-09-23

Publications (2)

Publication Number Publication Date
CN114256049A CN114256049A (zh) 2022-03-29
CN114256049B true CN114256049B (zh) 2024-04-16

Family

ID=80789840

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111079857.3A Active CN114256049B (zh) 2020-09-23 2021-09-15 等离子体处理装置和等离子体生成方法

Country Status (4)

Country Link
JP (1) JP7446190B2 (ja)
KR (1) KR20220040386A (ja)
CN (1) CN114256049B (ja)
TW (1) TW202231132A (ja)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001143896A (ja) * 1999-11-18 2001-05-25 Fuji Electric Co Ltd プラズマ発生装置およびその運転方法
JP2007311182A (ja) * 2006-05-18 2007-11-29 Tokyo Electron Ltd 誘導結合プラズマ処理装置およびプラズマ処理方法
CN101440484A (zh) * 2007-11-21 2009-05-27 东京毅力科创株式会社 感应耦合等离子体处理装置和等离子体处理方法
CN102420090A (zh) * 2010-09-28 2012-04-18 东京毅力科创株式会社 等离子体处理装置及处理方法
US8932474B1 (en) * 2013-03-05 2015-01-13 Eastman Kodak Company Imprinted multi-layer micro structure method
CN104282520A (zh) * 2013-07-04 2015-01-14 东京毅力科创株式会社 等离子体处理装置和等离子体分布调整方法
CN104299879A (zh) * 2013-07-16 2015-01-21 东京毅力科创株式会社 感应耦合等离子体处理装置
JP2016031955A (ja) * 2014-07-28 2016-03-07 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN107845558A (zh) * 2014-05-12 2018-03-27 东京毅力科创株式会社 等离子体处理装置和应用于等离子体处理装置的排气构造
JP2019192923A (ja) * 2019-06-06 2019-10-31 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100858102B1 (ko) * 2004-03-26 2008-09-10 닛신덴키 가부시키 가이샤 플라즈마발생장치
JP5479867B2 (ja) 2009-01-14 2014-04-23 東京エレクトロン株式会社 誘導結合プラズマ処理装置
KR20180092684A (ko) 2017-02-10 2018-08-20 주식회사 유진테크 Icp 안테나 및 이를 포함하는 기판 처리 장치

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001143896A (ja) * 1999-11-18 2001-05-25 Fuji Electric Co Ltd プラズマ発生装置およびその運転方法
JP2007311182A (ja) * 2006-05-18 2007-11-29 Tokyo Electron Ltd 誘導結合プラズマ処理装置およびプラズマ処理方法
CN101440484A (zh) * 2007-11-21 2009-05-27 东京毅力科创株式会社 感应耦合等离子体处理装置和等离子体处理方法
CN102420090A (zh) * 2010-09-28 2012-04-18 东京毅力科创株式会社 等离子体处理装置及处理方法
US8932474B1 (en) * 2013-03-05 2015-01-13 Eastman Kodak Company Imprinted multi-layer micro structure method
CN104282520A (zh) * 2013-07-04 2015-01-14 东京毅力科创株式会社 等离子体处理装置和等离子体分布调整方法
CN104299879A (zh) * 2013-07-16 2015-01-21 东京毅力科创株式会社 感应耦合等离子体处理装置
CN107845558A (zh) * 2014-05-12 2018-03-27 东京毅力科创株式会社 等离子体处理装置和应用于等离子体处理装置的排气构造
JP2016031955A (ja) * 2014-07-28 2016-03-07 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2019192923A (ja) * 2019-06-06 2019-10-31 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
TW202231132A (zh) 2022-08-01
JP2022052589A (ja) 2022-04-04
KR20220040386A (ko) 2022-03-30
JP7446190B2 (ja) 2024-03-08
CN114256049A (zh) 2022-03-29

Similar Documents

Publication Publication Date Title
TWI492294B (zh) Plasma processing device and plasma processing method
JP5231038B2 (ja) プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
KR101475546B1 (ko) 플라즈마 에칭 방법, 플라즈마 에칭 장치 및 기억 매체
TWI701704B (zh) 電漿產生設備及電漿處理一基體之方法
KR101839414B1 (ko) 플라즈마 처리 장치 및 플라즈마 제어 방법
JP7271330B2 (ja) 載置台及びプラズマ処理装置
KR102302313B1 (ko) 재치대에 피흡착물을 흡착시키는 방법 및 플라즈마 처리 장치
JP2016506592A (ja) 均一なプラズマ密度を有する容量結合プラズマ装置
CN110880443B (zh) 等离子处理装置
JP5674280B2 (ja) プラズマ処理装置
JP5461690B2 (ja) スパッタリング装置及びスパッタリング方法
KR20210029100A (ko) 플라즈마 처리 장치, 처리 방법 및 상부 전극 구조
JP4698454B2 (ja) 誘導結合型プラズマ処理装置
JP5951324B2 (ja) プラズマ処理装置
US20210183631A1 (en) Plasma processing apparatus and plasma processing method
CN114256049B (zh) 等离子体处理装置和等离子体生成方法
JP7158308B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP2010090445A (ja) スパッタリング装置、および成膜方法
CN111755312B (zh) 等离子体处理装置
JP2022042379A (ja) 載置台及びプラズマ処理装置
KR100592241B1 (ko) 유도결합형 플라즈마 처리장치
US20220406565A1 (en) Methods and apparatus for controlling radio frequency electrode impedances in process chambers
TW202233023A (zh) 電漿處理裝置與其製造方法及電漿處理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant