CN114244082B - Driving circuit, chip and electronic equipment - Google Patents
Driving circuit, chip and electronic equipment Download PDFInfo
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- CN114244082B CN114244082B CN202111682551.7A CN202111682551A CN114244082B CN 114244082 B CN114244082 B CN 114244082B CN 202111682551 A CN202111682551 A CN 202111682551A CN 114244082 B CN114244082 B CN 114244082B
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- 230000005669 field effect Effects 0.000 claims description 38
- 230000000087 stabilizing effect Effects 0.000 claims description 20
- 238000010586 diagram Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/083—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the ignition at the zero crossing of the voltage or the current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Logic Circuits (AREA)
Abstract
The application provides a drive circuit, a chip and electronic equipment, and belongs to the technical field of electronics. The driving circuit comprises a high-voltage generating module and a driving module, and the output end of the high-voltage generating module is connected with the driving module; the high voltage generation module is used for generating a first voltage, and the first voltage is larger than a reference potential; the driving module is used for driving based on a power supply voltage and the first voltage. By adopting the method and the device, the voltage margin of the driving module can be reduced, so that the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, and the whole area of the driving circuit is further reduced.
Description
Technical Field
The present disclosure relates to the field of electronic technologies, and in particular, to a driving circuit, a chip, and an electronic device.
Background
In some application scenarios, electronic circuits need to be driven in a high voltage environment, which may be referred to as high voltage drive circuits.
If the high voltage driving circuit adopts a low voltage device, the low voltage device may be broken down in a high voltage environment, and thus the high voltage driving circuit cannot be used normally. Therefore, conventional high voltage driving circuits are generally designed using high voltage devices.
However, the area of the high-voltage device is large, which is disadvantageous in cost saving.
Disclosure of Invention
In order to solve the problems in the prior art, the embodiment of the application provides a driving circuit, a chip and electronic equipment, which can be designed by adopting a low-voltage device under the condition of high-voltage driving, so that the area of the driving circuit is reduced. The technical proposal is as follows:
according to an aspect of the present application, there is provided a driving circuit, including a high voltage generation module and a driving module, an output end of the high voltage generation module being connected with the driving module;
the high voltage generation module is used for generating a first voltage, and the first voltage is larger than a reference potential;
the driving module is used for receiving the first voltage and driving based on the power supply voltage and the first voltage.
Optionally, the high voltage generating module comprises a voltage stabilizing module and an output module, and the output end of the voltage stabilizing module is connected with the output module;
the voltage stabilizing module is used for outputting a second voltage;
the output module is used for outputting the first voltage based on the power supply voltage and the second voltage.
Optionally, the voltage stabilizing module includes a zener diode.
Optionally, the output module includes a first field effect transistor, a control end of the first field effect transistor is configured to receive the second voltage, and an output end of the first field effect transistor is configured to output the first voltage.
Optionally, the output module further includes a switch unit, one end of the switch unit is connected with the input end of the first field effect tube, and the other end of the switch unit is used for receiving the reference potential.
Optionally, the switching unit includes a second field effect tube, a control end of the second field effect tube is used for receiving a switching control signal, an output end of the second field effect tube is connected with an input end of the first field effect tube, and an input end of the second field effect tube is used for receiving the reference potential.
Optionally, the driving module includes a plurality of sub driving modules, and a ground terminal of each sub driving module is respectively configured to receive the first voltage.
Optionally, the driving circuit includes a plurality of high voltage generating modules, and each high voltage generating module is respectively connected with one or more sub driving modules to input the first voltage to the sub driving modules.
Optionally, the driving module is further configured to output a third voltage based on the supply voltage, where the third voltage is greater than the supply voltage.
Optionally, the driving module comprises an operational amplifier module and a pressurizing module, and the output end of the operational amplifier module is connected with the pressurizing module;
the operational amplifier module is used for outputting a fourth voltage based on the power supply voltage;
the boosting module is used for outputting a third voltage which accords with a set boosting parameter based on the fourth voltage.
Optionally, the supercharging module comprises a control module;
the control module is used for outputting a starting control signal based on the feedback voltage, the fourth voltage and the power supply voltage of the pressurizing module, and the starting control signal is used for controlling the working state of the pressurizing module.
Optionally, the boosting module is configured to increase the output voltage based on the start control signal when the output voltage does not reach the boosting parameter; and stopping increasing the output voltage and maintaining the output voltage as the second voltage based on the start control signal when the output voltage reaches the boost parameter.
Optionally, the operational amplifier module includes a current source unit, a first resistor unit, a second resistor unit and a third resistor unit, the control module includes a fourth resistor unit and a fifth resistor unit, and the set boost parameter is obtained at least based on the current source unit, the first resistor unit, the fourth resistor unit and the fifth resistor unit.
Optionally, at least one of the first resistor unit, the second resistor unit, the third resistor unit, the fourth resistor unit, and the fifth resistor unit has a variable resistance value.
Optionally, the resistance values of the second resistance unit and the third resistance unit are equal.
Optionally, the boost module includes a plurality of boost channels, each boost channel outputs a corresponding third voltage, and the set boost parameters between every two boost channels are the same or different.
According to another aspect of the present application, there is provided a chip including the above-described driving circuit.
According to another aspect of the present application, there is provided an electronic device including the above-described driving circuit. In the embodiment of the application, the driving circuit may include a high voltage generating module configured to generate a first voltage higher than a reference potential, and drive the driving module together with a power supply voltage by using the first voltage as the reference potential. Because the driving module is driven based on the power supply voltage and the first voltage, the voltage margin of the driving module is reduced, so that the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, and the whole area of the driving circuit is further reduced.
Drawings
Further details, features and advantages of the present application are disclosed in the following description of exemplary embodiments, with reference to the following drawings, wherein:
fig. 1 shows a schematic diagram of a driving circuit provided according to an exemplary embodiment of the present application;
FIG. 2 illustrates a high voltage generation module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 3 illustrates a schematic diagram of a voltage regulation module provided in accordance with an exemplary embodiment of the present application;
FIG. 4 illustrates a schematic diagram of an output module provided in accordance with an exemplary embodiment of the present application;
FIG. 5 illustrates a schematic diagram of an output module provided in accordance with an exemplary embodiment of the present application;
FIG. 6 illustrates a schematic diagram of an output module provided in accordance with an exemplary embodiment of the present application;
FIG. 7 illustrates a high voltage generation module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 8 illustrates a schematic diagram of a drive module provided in accordance with an exemplary embodiment of the present application;
FIG. 9 illustrates a schematic diagram of a drive module provided in accordance with an exemplary embodiment of the present application;
FIG. 10 illustrates an operational amplifier module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 11 illustrates a control module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 12 illustrates a schematic diagram of a resistor unit provided in accordance with an exemplary embodiment of the present application;
fig. 13 shows a schematic diagram of a driving circuit provided according to an exemplary embodiment of the present application.
Detailed Description
Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While certain embodiments of the present application are shown in the drawings, it is to be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and examples of the present application are for illustrative purposes only and are not intended to limit the scope of the present application.
The term "including" and variations thereof as used herein are intended to be open-ended, i.e., including, but not limited to. The term "based on" is based at least in part on. The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments. Related definitions of other terms will be given in the description below. It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between different devices, modules, or units and not for limiting the order or interdependence of the functions performed by such devices, modules, or units.
It should be noted that references to "one" or "a plurality" in this application are intended to be illustrative rather than limiting, and those of ordinary skill in the art will appreciate that "one or more" is intended to be interpreted as "one or more" unless the context clearly indicates otherwise.
The names of messages or information interacted between the various devices in the embodiments of the present application are for illustrative purposes only and are not intended to limit the scope of such messages or information.
The embodiment of the application provides a driving circuit, which can be integrated in a chip or arranged in an electronic device.
Referring to the driving circuit schematic shown in fig. 1, the driving circuit may include a high voltage generation module and a driving module, and an output terminal of the high voltage generation module is connected to the driving module.
A high voltage generation module operable to generate a first voltage;
the driving module can be used for receiving the first voltage and driving based on the power supply voltage and the first voltage.
The first voltage is greater than a reference potential, which may be zero potential or a system reference potential, and is a potential reference point set in the chip or the electronic device. The power supply voltage may be a power supply voltage or a battery voltage, or may be a voltage output by other circuits and used for power supply, which is not limited in this embodiment.
In one possible embodiment, when the drive circuit is powered up, the entire drive circuit may be driven based on the supply voltage and the reference potential.
In the high voltage generation module, the first voltage may be generated based on a supply voltage and a reference potential. And the first voltage generated by the high-voltage generating module is used as a potential reference point of the driving module, and the driving module is driven based on the power supply voltage and the first voltage, so that the driving module can work normally.
Since the reference potential is usually zero potential or approaches zero potential, belonging to low voltage, and receiving the reference potential in the circuit is usually called "grounding", the application adopts the first voltage in the driving module to realize the original "grounding" function, so the first voltage can be called "high voltage ground".
Alternatively, referring to the schematic diagram of the high voltage generation module shown in fig. 2, the high voltage generation module may include a voltage stabilizing module and an output module, where an output end of the voltage stabilizing module is connected to the output module.
The voltage stabilizing module can be used for outputting a second voltage;
and an output module operable to output the first voltage based on the supply voltage and the second voltage.
Alternatively, the voltage stabilizing module may include a zener diode, and voltage stabilization is performed based on the zener diode.
In a specific embodiment, referring to the schematic diagram of the voltage stabilizing module shown in fig. 3, the voltage stabilizing module may include a resistor, a zener diode and a current source, where the positive pole of the zener diode is connected to the current source, and the negative pole is connected to the supply voltage; the resistor is arranged between the anode and the cathode of the zener diode and is connected with the zener diode in parallel; one end of the current source is connected with the zener diode, and the other end of the current source is grounded and connected with the zener diode in series. The second voltage output is the voltage at the cathode of the zener diode.
After the drive circuit is initialized, the zener diode is reversely broken down to perform voltage stabilization, and is set as Vd, namely the voltage at two ends of the zener diode or two ends of the resistor is Vd. If the supply voltage is the battery voltage VBAT, the second voltage output by the voltage stabilizing module may be VBAT-Vd.
Of course, the voltage stabilizing module may also adopt other specific circuits, for example, the current source may be replaced by a resistor, so that a stable voltage can be generated.
Optionally, the output module may include a first field effect transistor M1, where a control end of the first field effect transistor M1 is configured to receive the second voltage, and an output end is configured to output the first voltage. The control end of the first field effect transistor M1 is a grid electrode, the input end is a source electrode/drain electrode, and the output end is a drain electrode/source electrode.
Referring to the schematic diagram of the output module shown in fig. 4, the first field effect transistor M1 may be an NMOS (N-Metal-Oxide-Semiconductor) transistor, the voltage at the control terminal (i.e., the gate voltage of the NMOS) is the second voltage, the voltage at the output terminal (i.e., the source voltage of the NMOS) is the first voltage, the input terminal (i.e., the drain of the NMOS) is the high-impedance state, and at this time, the first voltage may be the sum of the second voltage and a threshold voltage, where the threshold voltage refers to the voltage between the output terminal and the control terminal when the first field effect transistor is in the critical on state. When the voltage stabilizing module shown in fig. 3 is combined with the output module shown in fig. 4, let the first voltage be h_agnd and the second voltage be VBAT-Vd, then h_agnd=vbat-vd+vth, where VTH is the threshold voltage.
Of course, the first fet M1 may also be a PMOS (P-Metal-Oxide-Semiconductor) tube, and the specific type of the first fet M1 is not limited in this embodiment.
Optionally, the output module may further include a switch unit, where one end of the switch unit is connected to the input end of the first field effect transistor M1, and the other end of the switch unit is used for receiving the reference potential.
The switching unit may be used to control the voltage output by the high voltage generation module. Referring to the schematic diagram of the output module shown in fig. 5, the first fet M1 is in a conducting state, and when the switch unit is turned on, the first voltage output by the high voltage generating module is a reference potential, that is, the high voltage generating module does not generate a high voltage ground at this time; when the switch unit is turned off, the input end of the first field effect transistor M1 is in a high-resistance state, and the high-voltage generation module can generate high-voltage ground.
Optionally, the switching unit may include a second field effect transistor M2, where a control end of the second field effect transistor M2 is configured to receive a switching control signal, and an output end of the second field effect transistor M2 is connected to an input end of the first field effect transistor M1, and the input end is configured to receive a reference potential. The control end of the second field effect transistor M2 is a gate, the input end is a source/drain, and the output end is a drain/source.
Referring to the output module schematic shown in fig. 6, the second fet M2 may be a PMOS transistor. When the switch control signal is at a high level, the second field effect transistor M2 is turned off, namely the switch unit is turned off; when the switch control signal is at a low level, the second fet M2 is turned on, i.e., the switch unit is turned on.
Of course, the second fet M2 may also be an NMOS transistor, and the specific type of the second fet M2 is not limited in this embodiment. Alternatively, the switching unit may be another switching circuit, and the specific circuit configuration of the switching unit is not limited in this embodiment.
Optionally, the driving module may include a plurality of sub-driving modules, and a ground terminal of each sub-driving module is respectively configured to receive the first voltage. The sub-driving module may be formed by any part of circuits in the driving module, and the specific circuit structure of the sub-driving module is not limited in this embodiment.
Optionally, the driving circuit includes a plurality of high voltage generating modules, and each high voltage generating module is respectively connected with one or more sub-driving modules to input the first voltage to each sub-driving module. The high voltage generating module can bear limited current, so that a plurality of high voltage generating modules connected in parallel can be arranged to share the current, and the circuit performance is ensured.
In one possible implementation manner, since the device that affects the current bearing is mainly a field effect transistor, the voltage stabilizing module can be multiplexed to provide the second voltage for a plurality of parallel output modules, and each output module outputs the first voltage respectively, so that the area is reduced as much as possible in the case of including a plurality of high voltage generating modules. Referring to the schematic diagram of the high voltage generation module shown in fig. 7, the voltage stabilizing module may be connected in series with a plurality of output modules, and the output modules are connected in parallel, and a circuit formed by the voltage stabilizing module and one output module is called a high voltage generation module.
Alternatively, the driving circuit may refer to a boost circuit, which is configured to implement a boost function, where the driving module may be further configured to output a third voltage based on the supply voltage.
The third voltage is greater than the supply voltage, and may refer to a voltage output after boosting. That is, the driving module may boost the power supply voltage and output the boosted voltage.
Alternatively, referring to the schematic diagram of the driving module shown in fig. 8, the driving module may include an operational amplifier module and a booster module, where an output end of the operational amplifier module is connected to the booster module.
The operational amplifier module can be used for outputting a fourth voltage based on the power supply voltage;
the boosting module is used for outputting a third voltage which accords with the set boosting parameter based on the fourth voltage.
In one possible implementation, the input voltage required by the boosting module is not necessarily equal to the supply voltage, so the operational amplifier module may be used to take the supply voltage as input, adjust the supply voltage, and output the fourth voltage. And the fourth voltage is taken as the input voltage of the boosting module, and the boosting module can increase the output voltage until the set boosting parameter is reached, wherein the output voltage is the third voltage.
Alternatively, referring to the schematic driving module shown in fig. 9, the boosting module may include a control module, and the control module may be configured to output a start control signal based on a feedback voltage, a fourth voltage, and a supply voltage of the boosting module, where the start control signal is configured to control an operation state of the boosting module.
On the basis, the boosting module can be configured to increase the output voltage when the output voltage does not reach the set boosting parameter; when the output voltage reaches the set boosting parameter, the output voltage is stopped to be increased. The output voltage may be maintained at the third voltage, that is, the set boost parameter after the set boost parameter is reached.
Alternatively, the operational amplifier module may include a current source unit, a first resistance unit R1, a second resistance unit R2, and a third resistance unit R3, and the control module may include a fourth resistance unit R4 and a fifth resistance unit R5, and may make the third voltage conform to the set boost parameter through the above units.
The current value of the current source unit may be a reference current value or other constant current values, which is not limited in this embodiment.
One embodiment may refer to the operational amplifier module schematic shown in fig. 10. On the input side of the operational amplifier, a first resistor unit R1 and a current source unit are connected in series. One end of the first resistor unit R1 is used for receiving a power supply voltage, the other end of the first resistor unit R1 is connected with one end of the current source unit, the other end of the current source unit is used for receiving a reference potential, and after the circuit is electrified, the first resistor unit R1 and the current source unit can form a passage. The non-inverting input of the operational amplifier is used for receiving the potential between the first resistance unit R1 and the current source unit.
On the output end side of the operational amplifier, the second resistor unit R2, the third resistor unit R3 and the third field effect transistor M3 are connected in series. One end of the second resistor unit R2 is used for receiving the power supply voltage, the other end of the second resistor unit R2 is connected with one end of the third resistor unit R3, the other end of the third resistor unit R3 is connected with the output end of the third field effect transistor M3, the input end of the third field effect transistor M3 is used for receiving the first voltage, namely receiving high-voltage ground, and the control end of the third resistor unit R3 is connected with the output end of the operational amplifier. The inverting input terminal of the operational amplifier is used for receiving the electric potential between the second resistance unit R2 and the third resistance unit R3. The fourth voltage output by the operational amplifier module is the potential of the other end of the third resistor unit R3. The control end of the third field effect transistor M3 is a gate, the input end is a source/drain, and the output end is a drain/source.
When the current value of the current source unit is IREF, the fourth voltage is VOUT1, and the supply voltage is VBAT, after the circuit is powered on, the fourth voltage VOUT 1=vbat-iref×r1 (r2+r3)/R2 can be obtained based on the principle that the operational amplifier is virtually short and virtually broken.
One embodiment may refer to the control module schematic shown in fig. 11. The control module may include a fourth resistance unit R4, a fifth resistance unit R5, and a comparison unit, and the remaining portion of the boosting module for achieving boosting may be referred to as a boosting unit. The comparison unit comprises two input ends and an output end, the two input ends are a first input end and a second input end respectively, the comparator is used for comparing the voltage of the first input end and the voltage of the second input end, the output end can output a first level if the voltage of the first input end is larger than the voltage of the second input end, and the output end can output a second level if the voltage of the first input end is smaller than the voltage of the second input end. Optionally, the first level is a high level, and the second level is a low level; alternatively, the first level is a low level and the second level is a high level.
One end of the fourth resistor unit R4 is configured to receive the fourth voltage, the other end of the fourth resistor unit R4 is connected to the fifth resistor unit R5, and the other end of the fifth resistor unit R5 is configured to receive the feedback voltage output by the boosting module. The first input end of the comparison unit is used for receiving the power supply voltage, the second input end of the comparison unit is used for receiving the electric potential between the fourth resistance unit R4 and the fifth resistance unit R5, and the output end of the comparison unit is connected with the boosting unit.
Let the voltage at the connection node of the fourth resistor unit R4 and the fifth resistor unit R5 be Vq and the supply voltage be VBAT. When the voltage output by the boosting module does not reach the set boosting parameter, the voltage Vq of the second input end of the comparison unit is smaller than the voltage of the first input end (namely the supply voltage VBAT), and the comparison unit can output a first level as a starting control signal to control the boosting unit to start so as to realize the function of increasing the voltage. When the voltage output by the voltage boosting module reaches the set voltage boosting parameter, the voltage Vq of the second input end of the comparison unit is increased to be larger than the voltage of the first input end (namely the supply voltage VBAT), the state of the comparison unit is turned over, a second level can be output, and the voltage boosting unit is controlled to stop increasing the voltage.
The specific voltage boosting unit can be formed based on an oscillating circuit and a charge pump unit, and can be realized by adopting the existing circuit structure, and the specific circuit structure of the voltage boosting unit is not limited in this embodiment.
When the voltage output by the boosting module reaches the set boosting parameter, namely when the loop is stable, vq=vbat, the fourth voltage is VOUT1, the third voltage is VOUT2, and (VOUT 2-VBAT)/r5= (VBAT-VOUT 1)/R4 can be obtained according to ohm's law, and VOUT 1=vbat- (VOUT 2-VBAT) ×r4/R5 can be obtained by arrangement.
And (3) making the expression of VOUT1 obtained in the operational amplifier module equal to the expression of VOUT1 obtained in the supercharging module, and further finishing to obtain VOUT 2-VBAT=IREF 1R 5 (R2 +R3)/(R2R 4). VOUT2-VBAT is a set boost parameter, and "set" means that the resistance values of the first resistor unit R1 to the fifth resistor unit R5 can be designed, and the current value of the current source unit can be designed, so as to achieve the effect of controlling the boost parameter.
The resistor unit described above may be one resistor element or may be a combination of a plurality of resistor elements. Alternatively, the resistance values of the first, second, third, fourth, and fifth resistance units R1, R2, R3, R4, and R5 may be variable. As shown in fig. 12, any of the above-mentioned resistor units may be a combination of a plurality of resistor elements, and the resistance value of the access circuit may be controlled by logic.
Alternatively, the resistance values of the second resistance unit R2 and the third resistance unit R3 are equal, that is, r2=r3 described above. On the basis, VOUT2-VBAT may be equal to 2×iref×r1×r5/R4, so that the boost parameters may be designed at least by the current source unit, the first resistor unit R1, the fourth resistor unit R4 and the fifth resistor unit R5, so as to reduce the difficulty of design.
Alternatively, the foregoing description may refer to an implementation manner of one boost channel, and the boost module may include a plurality of boost channels, where the principle of each boost channel is the same, and will not be described herein again. Each booster channel can respectively output a corresponding third voltage, and the set boosting parameters between every two booster channels are the same or different. That is, if it is necessary to obtain boost channels having different boost parameters, the fourth resistance unit R4 and the fifth resistance unit R5 of each boost channel may be designed to obtain different boost parameters.
And, when there are a plurality of pressurizing passages, the following cases may be included: firstly, setting boosting parameters of each boosting channel are the same; secondly, setting boosting parameters of each boosting channel are different; third, there are some boost channels with the same set boost parameters and some boost channels with different set boost parameters. The present embodiment does not limit the set boost parameter of the boost passage.
Fig. 13 shows a specific driving circuit, wherein OP is an operational amplifier in the operational amplifier module, CMP is the comparing unit, OSC is an oscillating circuit in the boosting unit, CHP is a charge pump unit in the boosting unit, EN is the start control signal, CLK is a clock control signal, and h_agnd and h_chp_agnd are the first voltage (i.e., high voltage ground). The high-voltage generated by the high-voltage generation module can be input into the grounding ends in the operational amplifier module and the boosting module, the operational amplifier module generates the fourth voltage VOUT1 based on the power supply voltage under the driving of the power supply voltage and the high-voltage ground, and the control module can judge whether the output voltage of the boosting module reaches the set boosting parameter or not based on the feedback voltage of the boosting module, the fourth voltage VOUT1 and the power supply voltage and control whether the boosting module increases the voltage or not. When the output voltage of the boosting module does not reach the set boosting parameters, the output voltage can be increased; when the output voltage of the boosting module reaches the set boosting parameter, the output voltage is stopped to be increased, and the third voltage VOUT2 is kept at a voltage conforming to the set boosting parameter. Optionally, the driving module may further include a zener diode for the protection circuit, an anode of the zener diode for receiving a potential between the fourth resistance unit R4 and the fifth resistance unit R5, and a cathode for receiving a supply voltage.
The embodiment of the application can obtain the following beneficial effects:
(1) The driving module is driven based on the power supply voltage and the first voltage, so that the voltage margin of the driving module can be reduced, the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, and the whole area of the driving circuit is further reduced.
(2) By adopting the circuit structure provided by the application, the design can be carried out at least through the resistance values of the three resistance units, the control of the boosting parameters is realized, and meanwhile, the design difficulty is reduced.
The embodiment of the application also provides a chip, which comprises the driving circuit provided by the embodiment of the application. In this embodiment of the application, based on supply voltage and first voltage drive module, can reduce drive module's voltage margin for can adopt low-voltage device to design drive module, can reduce drive module's area, and then reduce drive circuit holistic area, make drive circuit occupy the corresponding reduction in area of chip, can improve chip performance.
The embodiment of the application also provides electronic equipment, which comprises the driving circuit provided by the embodiment of the application. In this embodiment of the application, based on the power supply voltage and the first voltage drive the driving module, can reduce driving module's voltage margin for can adopt low-voltage device to design driving module, can reduce driving module's area, and then reduce driving circuit holistic area, can improve electronic equipment performance.
Claims (14)
1. The driving circuit is characterized by comprising a high-voltage generation module and a driving module, wherein the output end of the high-voltage generation module is connected with the driving module;
the high voltage generation module is used for generating a first voltage, and the first voltage is larger than a reference potential;
the driving module is used for receiving the first voltage and driving based on a power supply voltage and the first voltage;
the driving module comprises an operational amplifier, a current source unit, a first resistance unit, a second resistance unit and a third resistance unit, the supercharging module comprises a control module, the control module comprises a fourth resistance unit, a fifth resistance unit and a comparison unit, and the output end of the operational amplifier module is connected with the supercharging module; the operational amplifier module is used for outputting a fourth voltage based on the power supply voltage; the boosting module is configured to output a third voltage according to a set boosting parameter based on the fourth voltage, where the set boosting parameter is obtained at least based on the current source unit, the first resistor unit, the fourth resistor unit, and the fifth resistor unit;
one end of the first resistor unit is used for receiving power supply voltage, and the other end of the first resistor unit is connected with one end of the current source unit; the other end of the current source unit is used for receiving a reference potential; the non-inverting input end of the operational amplifier is used for receiving the potential between the first resistance unit and the current source unit;
one end of the second resistor unit is used for receiving power supply voltage, and the other end of the second resistor unit is connected with one end of the third resistor unit; the other end of the third resistor unit is connected with the output end of the third field effect transistor, and the fourth voltage output by the operational amplifier module is the potential of the other end of the third resistor unit; the input end of the third field effect transistor is used for receiving the first voltage, and the control end of the third field effect transistor is connected with the output end of the operational amplifier; the inverting input end of the operational amplifier is used for receiving the potential between the second resistance unit and the third resistance unit;
one end of the fourth resistor unit is used for receiving the fourth voltage output by the operational amplifier module, the other end of the fourth resistor unit is connected with the fifth resistor unit, and the other end of the fifth resistor unit is used for receiving the feedback voltage output by the pressurizing module; the first input end of the comparison unit is used for receiving a power supply voltage, and the second input end of the comparison unit is used for receiving a potential between the fourth resistance unit and the fifth resistance unit;
the high-voltage generation module comprises a voltage stabilizing module and an output module, and the output end of the voltage stabilizing module is connected with the output module; the voltage stabilizing module is used for outputting a second voltage; the output module is used for outputting the first voltage based on the power supply voltage and the second voltage; and when the driving circuit comprises a plurality of high-voltage generating modules, the voltage stabilizing module is used for providing the second voltage for a plurality of output modules which are connected in parallel, and each output module outputs the first voltage respectively.
2. The drive circuit of claim 1, wherein the voltage regulator module comprises a zener diode.
3. The driving circuit of claim 2, wherein the output module comprises a first field effect transistor, a control terminal of the first field effect transistor is configured to receive the second voltage, and an output terminal of the first field effect transistor is configured to output the first voltage.
4. A driving circuit according to claim 3, wherein the output module further comprises a switching unit having one end connected to the input of the first fet and the other end for receiving the reference potential.
5. The driving circuit of claim 4, wherein the switching unit comprises a second field effect transistor, a control terminal of the second field effect transistor is used for receiving a switching control signal, an output terminal of the second field effect transistor is connected with an input terminal of the first field effect transistor, and an input terminal of the second field effect transistor is used for receiving the reference potential.
6. The drive circuit of any one of claims 1-5, wherein the drive module comprises a plurality of sub-drive modules, each of the sub-drive modules having a ground for receiving the first voltage.
7. The drive circuit of claim 6, wherein the drive circuit comprises a plurality of high voltage generation modules, each high voltage generation module being respectively connected to one or more of the sub-drive modules to input the first voltage to the sub-drive modules.
8. The driving circuit according to claim 1, wherein,
the control module is used for outputting a starting control signal based on the feedback voltage, the fourth voltage and the power supply voltage of the pressurizing module, and the starting control signal is used for controlling the working state of the pressurizing module.
9. The drive circuit of claim 8, wherein the boost module is configured to increase the output voltage based on the start control signal when the output voltage does not reach the boost parameter; and stopping increasing the output voltage and maintaining the output voltage as the third voltage based on the start control signal when the output voltage reaches the boost parameter.
10. The drive circuit according to claim 1, wherein a resistance value of at least one of the first resistance unit, the second resistance unit, the third resistance unit, the fourth resistance unit, and the fifth resistance unit is variable.
11. The drive circuit according to claim 1, wherein the resistance values of the second resistance unit and the third resistance unit are equal.
12. The driving circuit according to claim 1, wherein the boosting module includes a plurality of boosting channels, each boosting channel outputting a corresponding third voltage, respectively, and the set boosting parameters between every two boosting channels are the same or different.
13. A chip comprising a drive circuit according to any one of claims 1-12.
14. An electronic device comprising a drive circuit as claimed in any one of claims 1-12.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111682551.7A CN114244082B (en) | 2021-12-30 | 2021-12-30 | Driving circuit, chip and electronic equipment |
| PCT/CN2022/142272 WO2023125517A1 (en) | 2021-12-30 | 2022-12-27 | Drive circuit, chip, and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111682551.7A CN114244082B (en) | 2021-12-30 | 2021-12-30 | Driving circuit, chip and electronic equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114244082A CN114244082A (en) | 2022-03-25 |
| CN114244082B true CN114244082B (en) | 2024-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111682551.7A Active CN114244082B (en) | 2021-12-30 | 2021-12-30 | Driving circuit, chip and electronic equipment |
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| Country | Link |
|---|---|
| CN (1) | CN114244082B (en) |
| WO (1) | WO2023125517A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114244082B (en) * | 2021-12-30 | 2024-04-09 | 合肥市芯海电子科技有限公司 | Driving circuit, chip and electronic equipment |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2023125517A1 (en) | 2023-07-06 |
| CN114244082A (en) | 2022-03-25 |
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