CN114244082A - Drive circuit, chip and electronic equipment - Google Patents

Drive circuit, chip and electronic equipment Download PDF

Info

Publication number
CN114244082A
CN114244082A CN202111682551.7A CN202111682551A CN114244082A CN 114244082 A CN114244082 A CN 114244082A CN 202111682551 A CN202111682551 A CN 202111682551A CN 114244082 A CN114244082 A CN 114244082A
Authority
CN
China
Prior art keywords
voltage
module
output
driving
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202111682551.7A
Other languages
Chinese (zh)
Other versions
CN114244082B (en
Inventor
韩雪峰
欧阳振华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chipsea Technologies Shenzhen Co Ltd
Hefei Chipsea Electronics Technology Co Ltd
Original Assignee
Chipsea Technologies Shenzhen Co Ltd
Hefei Chipsea Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chipsea Technologies Shenzhen Co Ltd, Hefei Chipsea Electronics Technology Co Ltd filed Critical Chipsea Technologies Shenzhen Co Ltd
Priority to CN202111682551.7A priority Critical patent/CN114244082B/en
Publication of CN114244082A publication Critical patent/CN114244082A/en
Priority to PCT/CN2022/142272 priority patent/WO2023125517A1/en
Application granted granted Critical
Publication of CN114244082B publication Critical patent/CN114244082B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/083—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the ignition at the zero crossing of the voltage or the current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

The application provides a drive circuit, a chip and electronic equipment, and belongs to the technical field of electronics. The driving circuit comprises a high-voltage generating module and a driving module, and the output end of the high-voltage generating module is connected with the driving module; the high voltage generation module is used for generating a first voltage, and the first voltage is greater than a reference potential; the driving module is used for driving based on a power supply voltage and the first voltage. By adopting the driving circuit, the voltage margin of the driving module can be reduced, so that the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, and the integral area of the driving circuit is reduced.

Description

Drive circuit, chip and electronic equipment
Technical Field
The present application relates to the field of electronic technologies, and in particular, to a driving circuit, a chip, and an electronic device.
Background
In some application scenarios, electronic circuits need to be driven in a high voltage environment, and such circuits may be referred to as high voltage driving circuits.
If the high-voltage driving circuit adopts low-voltage devices, the low-voltage devices may be broken down under the high-voltage environment, and the high-voltage driving circuit cannot be normally used. Therefore, conventional high voltage driving circuits are generally designed by using high voltage devices.
However, the area of the high-voltage device is large, which is not favorable for saving cost.
Disclosure of Invention
In order to solve the problems in the prior art, embodiments of the present application provide a driving circuit, a chip, and an electronic device, which can be designed by using a low-voltage device under a high-voltage driving condition, so as to reduce the area of the driving circuit. The technical scheme is as follows:
according to an aspect of the present application, a driving circuit is provided, which includes a high voltage generating module and a driving module, wherein an output end of the high voltage generating module is connected to the driving module;
the high voltage generation module is used for generating a first voltage, and the first voltage is greater than a reference potential;
the driving module is used for receiving the first voltage and driving based on a power supply voltage and the first voltage.
Optionally, the high voltage generation module includes a voltage stabilization module and an output module, and an output end of the voltage stabilization module is connected to the output module;
the voltage stabilizing module is used for outputting a second voltage;
the output module is used for outputting the first voltage based on the power supply voltage and the second voltage.
Optionally, the voltage regulation module includes a zener diode.
Optionally, the output module includes a first field effect transistor, a control end of the first field effect transistor is configured to receive the second voltage, and an output end of the first field effect transistor is configured to output the first voltage.
Optionally, the output module further includes a switch unit, one end of the switch unit is connected to the input end of the first field effect transistor, and the other end of the switch unit is used for receiving the reference potential.
Optionally, the switch unit includes a second field effect transistor, a control end of the second field effect transistor is configured to receive a switch control signal, an output end of the second field effect transistor is connected to an input end of the first field effect transistor, and an input end of the second field effect transistor is configured to receive the reference potential.
Optionally, the driving module includes a plurality of sub-driving modules, and a ground terminal of each sub-driving module is respectively configured to receive the first voltage.
Optionally, the driving circuit includes a plurality of high voltage generating modules, and each high voltage generating module is connected to one or more of the sub-driving modules, so as to input the first voltage to the sub-driving modules.
Optionally, the driving module is further configured to output a third voltage based on the power supply voltage, where the third voltage is greater than the power supply voltage.
Optionally, the driving module includes an operational amplifier module and a voltage boost module, and an output end of the operational amplifier module is connected to the voltage boost module;
the operational amplifier module is used for outputting a fourth voltage based on the power supply voltage;
and the boosting module is used for outputting a third voltage according with set boosting parameters based on the fourth voltage.
Optionally, the boost module comprises a control module;
the control module is used for outputting a starting control signal based on the feedback voltage, the fourth voltage and the power supply voltage of the boosting module, and the starting control signal is used for controlling the working state of the boosting module.
Optionally, the voltage boost module is configured to increase the output voltage based on the start control signal when the output voltage does not reach the boost parameter; when the output voltage reaches the boosting parameter, based on the start control signal, stopping increasing the output voltage and maintaining the output voltage at the second voltage.
Optionally, the operational amplifier module includes a current source unit, a first resistance unit, a second resistance unit and a third resistance unit, the control module includes a fourth resistance unit and a fifth resistance unit, and the set boost parameter is obtained at least based on the current source unit, the first resistance unit, the fourth resistance unit and the fifth resistance unit.
Optionally, at least one of the first resistance unit, the second resistance unit, the third resistance unit, the fourth resistance unit and the fifth resistance unit has a variable resistance value.
Optionally, the resistance values of the second resistance unit and the third resistance unit are equal.
Optionally, the boosting module includes a plurality of boosting channels, each boosting channel outputs a corresponding third voltage, and the set boosting parameters between every two boosting channels are the same or different.
According to another aspect of the present application, there is provided a chip including the above-described driving circuit.
According to another aspect of the present application, there is provided an electronic device including the above-described driving circuit. In an embodiment of the present application, the driving circuit may include a high voltage generation module configured to generate a first voltage higher than a reference potential, and drive the driving module with a supply voltage using the first voltage as the reference potential. The driving module is driven based on the power supply voltage and the first voltage, so that the voltage margin of the driving module is reduced, the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, and the whole area of the driving circuit is further reduced.
Drawings
Further details, features and advantages of the present application are disclosed in the following description of exemplary embodiments, which is to be read in connection with the accompanying drawings, in which:
FIG. 1 illustrates a schematic diagram of a driver circuit provided in accordance with an exemplary embodiment of the present application;
FIG. 2 illustrates a schematic diagram of a high voltage generation module provided in accordance with an exemplary embodiment of the present application;
FIG. 3 illustrates a schematic diagram of a voltage regulator module provided in accordance with an exemplary embodiment of the present application;
FIG. 4 illustrates a schematic diagram of an output module provided in accordance with an exemplary embodiment of the present application;
FIG. 5 illustrates a schematic diagram of an output module provided in accordance with an exemplary embodiment of the present application;
FIG. 6 illustrates a schematic diagram of an output module provided in accordance with an exemplary embodiment of the present application;
FIG. 7 illustrates a high voltage generation module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 8 illustrates a drive module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 9 illustrates a drive module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 10 illustrates a schematic diagram of an operational amplifier module provided in accordance with an exemplary embodiment of the present application;
FIG. 11 illustrates a control module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 12 illustrates a resistive cell schematic provided in accordance with an exemplary embodiment of the present application;
fig. 13 illustrates a schematic diagram of a driving circuit provided according to an exemplary embodiment of the present application.
Detailed Description
Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While certain embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided for a more thorough and complete understanding of the present application. It should be understood that the drawings and embodiments of the present application are for illustration purposes only and are not intended to limit the scope of the present application.
The term "include" and variations thereof as used herein are open-ended, i.e., "including but not limited to". The term "based on" is "based, at least in part, on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Relevant definitions for other terms will be given in the following description. It should be noted that the terms "first", "second", and the like in the present application are only used for distinguishing different devices, modules or units, and are not used for limiting the order or interdependence relationship of the functions performed by the devices, modules or units.
It is noted that references to "a", "an", and "the" modifications in this application are intended to be illustrative rather than limiting, and that those skilled in the art will recognize that reference to "one or more" unless the context clearly dictates otherwise.
The names of messages or information exchanged between a plurality of devices in the embodiments of the present application are for illustrative purposes only, and are not intended to limit the scope of the messages or information.
The embodiment of the application provides a driving circuit, and the driving circuit can be integrated in a chip or arranged in an electronic device.
Referring to the schematic diagram of the driving circuit shown in fig. 1, the driving circuit may include a high voltage generating module and a driving module, and an output terminal of the high voltage generating module is connected to the driving module.
A high voltage generation module operable to generate a first voltage;
the driving module can be used for receiving the first voltage and driving based on the power supply voltage and the first voltage.
The first voltage is greater than a reference potential, and the reference potential may be a zero potential or a system reference potential, and is a potential reference point set in the chip or the electronic device. The power supply voltage may refer to a power supply voltage or a battery voltage, and may also be a voltage for power supply output by other circuits, which is not limited in this embodiment.
In one possible embodiment, when the driving circuit is powered on, the entire driving circuit may be driven based on the supply voltage and the reference potential.
In the high voltage generation module, the first voltage may be generated based on the supply voltage and the reference potential. And the first voltage generated by the high-voltage generation module is used as a potential reference point of the driving module, and the driving module is driven based on the power supply voltage and the first voltage, so that the driving module can normally work.
Since the reference potential is usually zero potential or close to zero potential and belongs to low voltage, the reference potential received in the circuit is usually called "ground", and the first voltage is adopted in the driving module to realize the original "ground" function, so that the first voltage can be called "high voltage ground".
Optionally, referring to the schematic diagram of the high voltage generating module shown in fig. 2, the high voltage generating module may include a voltage stabilizing module and an output module, and an output end of the voltage stabilizing module is connected to the output module.
The voltage stabilizing module can be used for outputting a second voltage;
the output module may be configured to output a first voltage based on the supply voltage and the second voltage.
Optionally, the voltage stabilizing module may include a zener diode based on which the voltage is stabilized.
In a specific embodiment, referring to the schematic diagram of the voltage stabilizing module shown in fig. 3, the voltage stabilizing module may include a resistor, a zener diode and a current source, wherein the anode of the zener diode is connected to the current source, and the cathode of the zener diode is connected to the supply voltage; the resistor is arranged between the anode and the cathode of the Zener diode and is connected with the Zener diode in parallel; one end of the current source is connected with the Zener diode, and the other end of the current source is grounded and connected with the Zener diode in series. The second voltage output is the voltage at the cathode of the zener diode.
After the driving circuit is initialized, the zener diode breaks down in the reverse direction to stabilize the voltage, which is set as Vd, that is, the voltage across the zener diode or across the resistor is Vd. If the power supply voltage is the battery voltage VBAT, the second voltage output by the voltage stabilizing module may be VBAT-Vd.
Of course, the voltage stabilizing module may also adopt other specific circuits, for example, the current source may be replaced by a resistor, and a stable voltage may be generated.
Optionally, the output module may include a first fet M1, wherein a control terminal of the first fet M1 is configured to receive the second voltage, and an output terminal is configured to output the first voltage. The control terminal of the first field effect transistor M1 is a gate, the input terminal is a source/drain, and the output terminal is a drain/source.
Referring to the schematic diagram of the output module shown in fig. 4, the first field effect transistor M1 may be an NMOS (N-Metal-Oxide-Semiconductor) transistor, the voltage at the control end (i.e., the gate voltage of the NMOS transistor) is the second voltage, the voltage at the output end (i.e., the source voltage of the NMOS transistor) is the first voltage, and the voltage at the input end (i.e., the drain of the NMOS transistor) is in a high-impedance state, at this time, the first voltage may be a sum of the second voltage and a threshold voltage, where the threshold voltage is a voltage between the output end and the control end when the first field effect transistor is in a critical conduction state. When the voltage stabilizing module shown in fig. 3 is combined with the output module shown in fig. 4, the first voltage is H _ AGND, and the second voltage is VBAT-Vd, then H _ AGND is VBAT-Vd + VTH, where VTH is the threshold voltage.
Of course, the first fet M1 may also be a PMOS (P-Metal-Oxide-Semiconductor) transistor, and the specific type of the first fet M1 is not limited in this embodiment.
Optionally, the output module may further include a switch unit, one end of the switch unit is connected to the input end of the first field effect transistor M1, and the other end of the switch unit is used for receiving the reference potential.
The switching unit may be used to control the voltage output by the high voltage generation module. Referring to the schematic diagram of the output module shown in fig. 5, the first fet M1 is in a conducting state, and when the switch unit is conducting, the first voltage output by the high voltage generating module is a reference potential, that is, the high voltage generating module does not generate a high voltage ground at this time; when the switch unit is turned off, the input end of the first field effect transistor M1 is in a high impedance state, and the high voltage generation module can generate a high voltage ground.
Optionally, the switch unit may include a second fet M2, a control terminal of the second fet M2 being configured to receive a switch control signal, an output terminal of the second fet being connected to an input terminal of the first fet M1, and an input terminal of the second fet being configured to receive a reference potential. The control terminal of the second fet M2 is a gate, the input terminal is a source/drain, and the output terminal is a drain/source.
Referring to the schematic diagram of the output module shown in fig. 6, the second fet M2 may be a PMOS transistor. When the switch control signal is at a high level, the second field effect transistor M2 is turned off, that is, the switch unit is turned off; when the switch control signal is low, the second fet M2 is turned on, i.e., the switch unit is turned on.
Of course, the second fet M2 may also be an NMOS transistor, and the present embodiment does not limit the specific type of the second fet M2. Alternatively, the switch unit may be another switch circuit, and the specific circuit structure of the switch unit is not limited in this embodiment.
Optionally, the driving module may include a plurality of sub-driving modules, and a ground terminal of each sub-driving module is respectively configured to receive the first voltage. The sub-driving module may be formed by any part of circuits in the driving module, and the specific circuit structure of the sub-driving module is not limited in this embodiment.
Optionally, the driving circuit includes a plurality of high voltage generating modules, and each high voltage generating module is connected to one or more sub-driving modules, so as to input the first voltage to each sub-driving module. The high-voltage generation module can bear limited current, so that a plurality of parallel high-voltage generation modules can be arranged to share the current, and the circuit performance is ensured.
In a possible implementation mode, since the device influencing the bearing current is mainly a field effect transistor, the multiplexing voltage stabilizing module can provide the second voltage for a plurality of output modules connected in parallel, each output module respectively outputs the first voltage, and the area is reduced as much as possible under the condition that a plurality of high voltage generating modules are included. Referring to the schematic diagram of the high voltage generating module shown in fig. 7, the voltage stabilizing module may be connected in series with a plurality of output modules, and the plurality of output modules are connected in parallel, and a circuit formed by the voltage stabilizing module and one output module is referred to as one high voltage generating module.
Optionally, the driving circuit may be a boost circuit, and is configured to implement a boost function, and at this time, the driving module may be further configured to output a third voltage based on the supply voltage.
The third voltage is greater than the power supply voltage, and may be a boosted output voltage. That is, the driving module may boost the power supply voltage and output the boosted voltage.
Optionally, referring to the schematic diagram of the driving module shown in fig. 8, the driving module may include an operational amplifier module and a voltage boost module, and an output end of the operational amplifier module is connected to the voltage boost module.
The operational amplifier module can be used for outputting a fourth voltage based on the power supply voltage;
and the boosting module is used for outputting a third voltage according with the set boosting parameter based on the fourth voltage.
In a possible implementation manner, the input voltage required by the voltage boost module is not necessarily equal to the supply voltage, so the operational amplifier module may be used to take the supply voltage as an input, adjust the supply voltage, and output the fourth voltage. And then, the fourth voltage is used as the input voltage of the boosting module, the boosting module can increase the output voltage until the set boosting parameter is reached, and the output voltage is the third voltage at the moment.
Alternatively, referring to the schematic diagram of the driving module shown in fig. 9, the voltage boost module may include a control module, and the control module may be configured to output a start control signal based on the feedback voltage, the fourth voltage, and the supply voltage of the voltage boost module, where the start control signal is used to control the operating state of the voltage boost module.
On this basis, the boosting module may be configured to increase the output voltage when the output voltage does not reach the set boosting parameter; and when the output voltage reaches the set boosting parameter, stopping increasing the output voltage. The output voltage may be maintained at the third voltage, that is, at the set boosting parameter after the voltage reaches the set boosting parameter.
Alternatively, the operational amplifier module may include a current source unit, a first resistance unit R1, a second resistance unit R2, and a third resistance unit R3, and the control module may include a fourth resistance unit R4 and a fifth resistance unit R5, and may make the third voltage conform to the set boosting parameter through the above units.
The current value of the current source unit may be a reference current value, or may be another constant current value, which is not limited in this embodiment.
One specific implementation can be seen in the operational amplifier module schematic shown in fig. 10. On the input side of the operational amplifier, a first resistance unit R1 is connected in series with the current source unit. One end of the first resistor unit R1 is used for receiving a supply voltage, the other end is connected to one end of the current source unit, the other end of the current source unit is used for receiving a reference potential, and after the circuit is powered on, the first resistor unit R1 and the current source unit can form a path. The non-inverting input of the operational amplifier is arranged to receive a potential between the first resistor unit R1 and the current source unit.
On the output side of the operational amplifier, the second resistance unit R2, the third resistance unit R3, and the third field effect transistor M3 are connected in series. One end of the second resistor unit R2 is used for receiving a supply voltage, the other end is connected to one end of the third resistor unit R3, the other end of the third resistor unit R3 is connected to the output end of the third fet M3, the input end of the third fet M3 is used for receiving the first voltage, i.e., receiving a high voltage ground, and the control end is connected to the output end of the operational amplifier. The inverting input terminal of the operational amplifier is used for receiving the potential between the second resistor unit R2 and the third resistor unit R3. The fourth voltage output by the operational amplifier module is the potential of the other end of the third resistor unit R3. The control terminal of the third fet M3 is a gate, the input terminal is a source/drain, and the output terminal is a drain/source.
If the current value of the current source unit is IREF, the fourth voltage is VOUT1, and the supply voltage is VBAT, then after the circuit is powered on, based on the principle of virtual short and virtual disconnection of the operational amplifier, the fourth voltage VOUT1 ═ VBAT-IREF R1 × (R2+ R3)/R2 can be obtained.
One specific embodiment may be seen in the control module schematic shown in fig. 11. The control module may include a fourth resistance unit R4, a fifth resistance unit R5, and a comparison unit, and the remaining portion of the boosting module for achieving boosting may be referred to as a boosting unit. The comparison unit comprises two input ends and an output end, the two input ends are respectively a first input end and a second input end, the comparator is used for comparing the voltage of the first input end with the voltage of the second input end, if the voltage of the first input end is larger than the voltage of the second input end, the output end can output a first level, and if the voltage of the first input end is smaller than the voltage of the second input end, the output end can output a second level. Optionally, the first level is a high level, and the second level is a low level; alternatively, the first level is a low level and the second level is a high level.
One end of the fourth resistor unit R4 is used for receiving the fourth voltage, the other end of the fourth resistor unit R4 is connected to the fifth resistor unit R5, and the other end of the fifth resistor unit R5 is used for receiving the feedback voltage output by the voltage boost module. The first input end of the comparison unit is used for receiving a power supply voltage, the second input end of the comparison unit is used for receiving the potential between the fourth resistance unit R4 and the fifth resistance unit R5, and the output end of the comparison unit is connected with the voltage boosting unit.
Let Vq be the voltage at the junction of the fourth resistor unit R4 and the fifth resistor unit R5, and VBAT be the power supply voltage. When the voltage output by the boosting module does not reach the set boosting parameter, the voltage Vq of the second input end of the comparison unit is smaller than the voltage of the first input end (namely, the power supply voltage VBAT), and then the comparison unit can output a first level as a starting control signal to control the boosting unit to start, so that the function of increasing the voltage is realized. When the voltage output by the boosting module reaches the set boosting parameter, the voltage Vq of the second input end of the comparison unit is increased to be greater than the voltage of the first input end (namely, the power supply voltage VBAT), and then the state of the comparison unit is reversed, so that a second level can be output, and the boosting unit is controlled to stop increasing the voltage.
A specific voltage boost unit may be formed based on an oscillation circuit and a charge pump unit, and may be implemented by using an existing circuit structure, and the specific circuit structure of the voltage boost unit is not limited in this embodiment.
If the fourth voltage is VOUT1 and the third voltage is VOUT2, when the voltage output by the boost module reaches the set boost parameter, i.e., when the loop is stable, Vq is VBAT, which can be obtained by (VOUT2-VBAT)/R5 is (VBAT-VOUT1)/R4 according to ohm's law, and VOUT1 is VBAT- (VOUT2-VBAT) R4/R5.
The expression of VOUT1 obtained in the operational amplifier module is equal to the expression of VOUT1 obtained in the voltage boost module, and VOUT2-VBAT (IREF) R1R 5(R2+ R3)/(R2R 4) is obtained by further sorting. The VOUT2-VBAT is the setting of the boosting parameters, and the "setting" means that the resistance values of the first resistor unit R1 to the fifth resistor unit R5 can be designed, and the current value of the current source unit can be designed, so as to achieve the effect of controlling the boosting parameters.
The resistance unit described above may be one resistance element or a combination of a plurality of resistance elements. Alternatively, the resistance values of the first, second, third, fourth, and fifth resistance units R1, R2, R3, R4, and R5 may be variable. As shown in fig. 12, any one of the resistance units may be a combination of a plurality of resistance elements, and the resistance value of the access circuit may be controlled by logic.
Optionally, the resistance values of the second resistor unit R2 and the third resistor unit R3 are equal, that is, R2 is equal to R3. On the basis, VOUT2-VBAT may be equal to 2 × IREF × R1 × R5/R4, so that the boosting parameters may be designed at least through the current source unit, the first resistor unit R1, the fourth resistor unit R4, and the fifth resistor unit R5, thereby reducing the design difficulty.
Optionally, the above description may refer to an implementation manner of one boost passage, and the boost module may include a plurality of boost passages, and the principle of each boost passage is the same, and is not described herein again. Each boosting channel can output corresponding third voltage, and the set boosting parameters between every two boosting channels are the same or different. That is, if boost channels with different boost parameters are required, different boost parameters can be obtained by designing the fourth resistance unit R4 and the fifth resistance unit R5 of each boost channel.
Also, when there are a plurality of supercharging passages, there may be included the following cases: firstly, the set boosting parameters of each boosting channel are the same; secondly, the set boosting parameters of each boosting channel are different; thirdly, the set boosting parameters of the partial boosting channels are the same, and the set boosting parameters of the partial boosting channels are different. The present embodiment does not limit the set boost parameter of the boost passage.
Fig. 13 shows a specific driving circuit, wherein OP is an operational amplifier in the operational amplifier module, CMP is the comparison unit, OSC is an oscillation circuit in the voltage boost unit, CHP is a charge pump unit in the voltage boost unit, EN is the enable control signal, CLK is a clock control signal, and H _ AGND and H _ CHP _ AGND are the first voltage (i.e., high-voltage ground). The high-voltage ground generated by the high-voltage generation module can be input into the grounding ends of the operational amplifier module and the voltage boosting module, the operational amplifier module generates a fourth voltage VOUT1 based on the power supply voltage under the driving of the power supply voltage and the high-voltage ground, and the control module can judge whether the output voltage of the voltage boosting module reaches a set voltage boosting parameter or not and control whether the voltage boosting module increases the voltage or not based on the feedback voltage of the voltage boosting module, the fourth voltage VOUT1 and the power supply voltage. When the output voltage of the boosting module does not reach the set boosting parameter, the output voltage can be increased; when the output voltage of the boost module reaches the set boost parameter, the increase of the output voltage is stopped, and the third voltage VOUT2 is maintained at a voltage that meets the set boost parameter. Optionally, the driving module may further include a zener diode for protecting the circuit, wherein an anode of the zener diode is used for receiving a potential between the fourth resistor unit R4 and the fifth resistor unit R5, and a cathode of the zener diode is used for receiving the supply voltage.
The embodiment of the application can obtain the following beneficial effects:
(1) the driving module is driven based on the power supply voltage and the first voltage, so that the voltage margin of the driving module can be reduced, the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, and the whole area of the driving circuit is reduced.
(2) By adopting the circuit structure provided by the application, the resistance value of at least three resistance units can be designed, the control of the boosting parameters is realized, and the design difficulty is reduced.
The exemplary embodiment of the present application also provides a chip including the driving circuit provided by the embodiment of the present application. In the embodiment of the application, the driving module is driven based on the power supply voltage and the first voltage, the voltage margin of the driving module can be reduced, so that the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, the whole area of the driving circuit is reduced, the area of the chip occupied by the driving circuit is correspondingly reduced, and the performance of the chip can be improved.
The exemplary embodiment of the present application also provides an electronic device including the driving circuit provided by the embodiment of the present application. In the embodiment of the application, the driving module is driven based on the power supply voltage and the first voltage, so that the voltage margin of the driving module can be reduced, the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, the whole area of a driving circuit is reduced, and the performance of the electronic equipment can be improved.

Claims (18)

1. The driving circuit is characterized by comprising a high-voltage generation module and a driving module, wherein the output end of the high-voltage generation module is connected with the driving module;
the high voltage generation module is used for generating a first voltage, and the first voltage is greater than a reference potential;
the driving module is used for receiving the first voltage and driving based on a power supply voltage and the first voltage.
2. The driving circuit according to claim 1, wherein the high voltage generating module comprises a voltage stabilizing module and an output module, and an output terminal of the voltage stabilizing module is connected with the output module;
the voltage stabilizing module is used for outputting a second voltage;
the output module is used for outputting the first voltage based on the power supply voltage and the second voltage.
3. The driving circuit of claim 2, wherein the voltage regulation module comprises a zener diode.
4. The driving circuit of claim 3, wherein the output module comprises a first field effect transistor, a control terminal of the first field effect transistor is configured to receive the second voltage, and an output terminal of the first field effect transistor is configured to output the first voltage.
5. The driving circuit according to claim 4, wherein the output module further comprises a switch unit, one end of the switch unit is connected to the input end of the first field effect transistor, and the other end of the switch unit is used for receiving the reference potential.
6. The driving circuit according to claim 5, wherein the switching unit comprises a second fet having a control terminal for receiving a switching control signal, an output terminal connected to the input terminal of the first fet, and an input terminal for receiving the reference potential.
7. The driving circuit according to any one of claims 1 to 6, wherein the driving module comprises a plurality of sub-driving modules, and a ground terminal of each of the sub-driving modules is respectively configured to receive the first voltage.
8. The driving circuit according to claim 7, wherein the driving circuit comprises a plurality of high voltage generating modules, and each high voltage generating module is respectively connected with one or more of the sub-driving modules to input the first voltage to the sub-driving modules.
9. The driving circuit of claim 1, wherein the driving module is further configured to output a third voltage based on the supply voltage, and the third voltage is greater than the supply voltage.
10. The driving circuit according to claim 9, wherein the driving module comprises an operational amplifier module and a voltage boosting module, and an output end of the operational amplifier module is connected with the voltage boosting module;
the operational amplifier module is used for outputting a fourth voltage based on the power supply voltage;
and the boosting module is used for outputting a third voltage according with set boosting parameters based on the fourth voltage.
11. The drive circuit of claim 10, wherein the boost module comprises a control module;
the control module is used for outputting a starting control signal based on the feedback voltage, the fourth voltage and the power supply voltage of the boosting module, and the starting control signal is used for controlling the working state of the boosting module.
12. The driving circuit of claim 11, wherein the voltage boost module is configured to increase the output voltage based on the start-up control signal when the output voltage does not reach the boost parameter; when the output voltage reaches the boosting parameter, stopping increasing the output voltage based on the start control signal, and maintaining the output voltage at the third voltage.
13. The driving circuit according to claim 11, wherein the operational amplifier module includes a current source unit, a first resistor unit, a second resistor unit and a third resistor unit, the control module includes a fourth resistor unit and a fifth resistor unit, and the set boosting parameter is obtained based on at least the current source unit, the first resistor unit, the fourth resistor unit and the fifth resistor unit.
14. The driving circuit according to claim 13, wherein at least one of the first resistance unit, the second resistance unit, the third resistance unit, the fourth resistance unit, and the fifth resistance unit has a variable resistance value.
15. The driving circuit according to claim 13, wherein the second resistance unit and the third resistance unit have equal resistance values.
16. The driving circuit according to claim 10, wherein the boosting module comprises a plurality of boosting channels, each boosting channel outputs a corresponding third voltage, and the set boosting parameters between every two boosting channels are the same or different.
17. A chip comprising a driver circuit as claimed in any one of claims 1 to 16.
18. An electronic device, characterized in that it comprises a driver circuit according to any one of claims 1-16.
CN202111682551.7A 2021-12-30 2021-12-30 Driving circuit, chip and electronic equipment Active CN114244082B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202111682551.7A CN114244082B (en) 2021-12-30 2021-12-30 Driving circuit, chip and electronic equipment
PCT/CN2022/142272 WO2023125517A1 (en) 2021-12-30 2022-12-27 Drive circuit, chip, and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111682551.7A CN114244082B (en) 2021-12-30 2021-12-30 Driving circuit, chip and electronic equipment

Publications (2)

Publication Number Publication Date
CN114244082A true CN114244082A (en) 2022-03-25
CN114244082B CN114244082B (en) 2024-04-09

Family

ID=80745575

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111682551.7A Active CN114244082B (en) 2021-12-30 2021-12-30 Driving circuit, chip and electronic equipment

Country Status (2)

Country Link
CN (1) CN114244082B (en)
WO (1) WO2023125517A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023125517A1 (en) * 2021-12-30 2023-07-06 合肥市芯海电子科技有限公司 Drive circuit, chip, and electronic device

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11353889A (en) * 1998-04-09 1999-12-24 Toshiba Corp Internal voltage generation circuit and semiconductor memory
CN1677817A (en) * 2004-03-30 2005-10-05 罗姆股份有限公司 Boost circuit capable of step-up ratio control
CN101002378A (en) * 2004-05-24 2007-07-18 曹永昌 Method for controlling low- voltage using waves AC and system for performing the same
CN103177684A (en) * 2011-12-26 2013-06-26 乐金显示有限公司 Drive voltage generation circuit for light emitting diode display device and method for driving the same
CN203243297U (en) * 2013-01-05 2013-10-16 江阴芯成光电科技有限公司 Mixed type switch structure adopting low-voltage signals to control extra-high voltage NMOS
CN103856205A (en) * 2012-12-05 2014-06-11 艾尔瓦特集成电路科技（天津）有限公司 Level switching circuit, drive circuit for driving high voltage devices and corresponding method
WO2015182175A1 (en) * 2014-05-28 2015-12-03 シャープ株式会社 Driver circuit
CN105141119A (en) * 2015-10-10 2015-12-09 上海灿瑞科技股份有限公司 Power-on clear and under-voltage lockout starting circuit
CN105246207A (en) * 2015-10-30 2016-01-13 上海晶丰明源半导体有限公司 Starting circuit of chip, LED driver, LED drive circuit, and starting method of chip
CN110474530A (en) * 2019-08-05 2019-11-19 苏州浪潮智能科技有限公司 A kind of capacitor charging control circuit
CN110612660A (en) * 2017-04-24 2019-12-24 德州仪器公司 VBOOST signal generation
CN113364278A (en) * 2020-04-08 2021-09-07 澜起电子科技(昆山)有限公司 Switching current source circuit and switching current source rapid establishment method
CN113572355A (en) * 2021-09-26 2021-10-29 苏州贝克微电子有限公司 Power supply circuit with stable output voltage
CN219046464U (en) * 2022-12-27 2023-05-19 瑞韬电子科技(无锡)有限公司 Half-bridge driving circuit adopting floating ground voltage stabilization and boosting

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6979937B2 (en) * 2018-11-22 2021-12-15 三菱電機株式会社 High side drive circuit
CN113193750B (en) * 2021-07-01 2021-09-17 成都市安比科技有限公司 High-voltage-resistant LDO linear power supply realized by low-voltage MOSFET
CN114244082B (en) * 2021-12-30 2024-04-09 合肥市芯海电子科技有限公司 Driving circuit, chip and electronic equipment
CN114337268A (en) * 2021-12-30 2022-04-12 合肥市芯海电子科技有限公司 Boost circuit, chip and electronic equipment
CN216904653U (en) * 2021-12-30 2022-07-05 合肥市芯海电子科技有限公司 Drive circuit, chip and electronic equipment

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11353889A (en) * 1998-04-09 1999-12-24 Toshiba Corp Internal voltage generation circuit and semiconductor memory
CN1677817A (en) * 2004-03-30 2005-10-05 罗姆股份有限公司 Boost circuit capable of step-up ratio control
CN101002378A (en) * 2004-05-24 2007-07-18 曹永昌 Method for controlling low- voltage using waves AC and system for performing the same
CN103177684A (en) * 2011-12-26 2013-06-26 乐金显示有限公司 Drive voltage generation circuit for light emitting diode display device and method for driving the same
CN103856205A (en) * 2012-12-05 2014-06-11 艾尔瓦特集成电路科技（天津）有限公司 Level switching circuit, drive circuit for driving high voltage devices and corresponding method
CN203243297U (en) * 2013-01-05 2013-10-16 江阴芯成光电科技有限公司 Mixed type switch structure adopting low-voltage signals to control extra-high voltage NMOS
WO2015182175A1 (en) * 2014-05-28 2015-12-03 シャープ株式会社 Driver circuit
CN105141119A (en) * 2015-10-10 2015-12-09 上海灿瑞科技股份有限公司 Power-on clear and under-voltage lockout starting circuit
CN105246207A (en) * 2015-10-30 2016-01-13 上海晶丰明源半导体有限公司 Starting circuit of chip, LED driver, LED drive circuit, and starting method of chip
CN110612660A (en) * 2017-04-24 2019-12-24 德州仪器公司 VBOOST signal generation
CN110474530A (en) * 2019-08-05 2019-11-19 苏州浪潮智能科技有限公司 A kind of capacitor charging control circuit
CN113364278A (en) * 2020-04-08 2021-09-07 澜起电子科技(昆山)有限公司 Switching current source circuit and switching current source rapid establishment method
CN113572355A (en) * 2021-09-26 2021-10-29 苏州贝克微电子有限公司 Power supply circuit with stable output voltage
CN219046464U (en) * 2022-12-27 2023-05-19 瑞韬电子科技(无锡)有限公司 Half-bridge driving circuit adopting floating ground voltage stabilization and boosting

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023125517A1 (en) * 2021-12-30 2023-07-06 合肥市芯海电子科技有限公司 Drive circuit, chip, and electronic device

Also Published As

Publication number Publication date
WO2023125517A1 (en) 2023-07-06
CN114244082B (en) 2024-04-09

Similar Documents

Publication Publication Date Title
US8508963B2 (en) Step-down switching regulator capable of providing high-speed response with compact structure
JP4756138B2 (en) High voltage power switch using low voltage transistors
US7492215B2 (en) Power managing apparatus
CN111817554B (en) Power supply circuit, power supply device, and vehicle
US7741884B2 (en) Load drive circuit
US20120098337A1 (en) Electric power path switching method and electric power path switching circuit
CN214755708U (en) Dual-input power supply control circuit with constant voltage switching
CN216904653U (en) Drive circuit, chip and electronic equipment
CN110676830A (en) Current backflow prevention circuit and intelligent door lock system
CN114244082A (en) Drive circuit, chip and electronic equipment
US20070210858A1 (en) Circuit and method for fast switching of a current mirror with large mosfet size
CN114337268A (en) Boost circuit, chip and electronic equipment
US20160103464A1 (en) Powering of a Charge with a Floating Node
US7336005B2 (en) System and method for brownout protection of a FET based battery switch
CN110663164B (en) Power converter pre-driver system with multiple power modes
JP2022103616A (en) Switching power supply circuit and switching power supply device
JP2011259653A (en) Power management circuit, and high-frequency circuit ic including the same
CN210724204U (en) Current backflow prevention circuit and intelligent door lock system
JP4467150B2 (en) Driving circuit
KR102627333B1 (en) Soft start circuit for power system
CN220190673U (en) Driving circuit, switch module and electronic equipment
CN217063571U (en) DC voltage-stabilized power supply circuit of switching power supply driving chip
JP2013219860A (en) Charger
CN210666689U (en) Electronic device
CN117811183A (en) Power supply circuit applied to multi-power supply system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant