CN114242848A - LED packaging method and LED lamp - Google Patents
LED packaging method and LED lamp Download PDFInfo
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- CN114242848A CN114242848A CN202111365071.8A CN202111365071A CN114242848A CN 114242848 A CN114242848 A CN 114242848A CN 202111365071 A CN202111365071 A CN 202111365071A CN 114242848 A CN114242848 A CN 114242848A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 29
- 239000012790 adhesive layer Substances 0.000 claims abstract description 61
- 239000010410 layer Substances 0.000 claims abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000741 silica gel Substances 0.000 claims abstract description 32
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 32
- 239000000843 powder Substances 0.000 claims abstract description 15
- 239000000853 adhesive Substances 0.000 claims description 50
- 230000001070 adhesive effect Effects 0.000 claims description 50
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 35
- 230000000694 effects Effects 0.000 abstract description 11
- 230000005284 excitation Effects 0.000 abstract description 10
- 230000004907 flux Effects 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 2
- 229920001296 polysiloxane Polymers 0.000 description 12
- 239000000499 gel Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 229920002379 silicone rubber Polymers 0.000 description 6
- 239000004945 silicone rubber Substances 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED packaging method and an LED lamp, wherein the method comprises the following steps: providing a support and at least one LED chip; fixing the LED chip on the bracket through a heat-conducting adhesive layer; carrying out wire bonding treatment on the LED chip and the bracket; arranging a first silica gel layer covering the LED chip on the support; and a second silica gel layer mixed with fluorescent powder is arranged on the first silica gel layer. The LED chip is fixed on the support through the heat-conducting adhesive layer, so that the light emitted by the LED chip can be effectively transmitted to the support, the heat of the LED chip is reduced, and the reduction of the luminous flux emitted by the LED chip is avoided; simultaneously, separate LED chip and phosphor powder through setting up first silica gel layer, avoid the LED chip to generate heat the excitation effect that influences the phosphor powder to avoid appearing the color coordinate drift problem.
Description
Technical Field
The invention relates to the technical field of LED packaging, in particular to an LED packaging process and an LED lamp.
Background
An LED (Light-Emitting Diode) is a common Light-Emitting device, and a common LED production process includes steps of arranging an LED chip on a support, and sequentially performing processes such as die bonding, wire bonding, powder dispensing, baking, and the like. Because the LED chip can cause the luminance to reduce by the intensification when luminous, present production technology is through phosphor powder sediment technology, utilizes phosphor powder sediment to adhere to LED chip and support bottom, conducts the heat of LED chip to the support, but the heat transfer that the LED chip produced can make phosphor powder arouse the effect after being heated worsen to the phosphor powder, leads to the phenomenon of color coordinate drift to appear.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: an LED packaging method and an LED lamp are provided to solve the problem of how to reduce the temperature of an LED chip and avoid color coordinate drift.
In order to solve the technical problems, the invention adopts the technical scheme that:
an LED packaging method, comprising the steps of:
providing a support and at least one LED chip;
fixing the LED chip on the bracket through a heat-conducting adhesive layer;
carrying out wire bonding treatment on the LED chip and the bracket;
arranging a first silica gel layer covering the LED chip on the support;
and a second silica gel layer mixed with fluorescent powder is arranged on the first silica gel layer.
Further, the step of fixing the LED chip on the support through a thermal conductive adhesive layer further includes:
and fixing the edge of the LED chip on the support through a transparent adhesive layer.
Further, the step of fixing the LED chip on the support through a thermal conductive adhesive layer includes;
providing first die attach adhesive, and arranging the first die attach adhesive on the bracket;
placing the LED chip on the first die attach adhesive;
and applying pressure to the LED chip to diffuse the first die bond adhesive and solidify to form the heat-conducting adhesive layer.
Further, the step of disposing the first die attach adhesive on the bracket includes:
and arranging at least two first die attach adhesives on the bracket corresponding to the mounting positions of the LED chips.
Further, the heat-conducting adhesive layer is located in a projection range of the LED chip on the support.
Further, the thickness of the heat-conducting adhesive layer is less than 5 μm.
Further, the step of fixing the edge of the LED chip to the bracket through a transparent adhesive layer includes:
providing second die attach adhesives, and arranging a plurality of second die attach adhesives on the edge of the bracket close to the LED chip;
and diffusing and curing the second die bond adhesive to form the transparent adhesive layer.
Further, the height of the transparent adhesive layer is less than one third of the height of the LED chip.
Furthermore, the material of the support is C194 red copper.
The application also provides an LED lamp which is manufactured by the LED packaging method.
The invention has the beneficial effects that: the LED chip is fixed on the support through the heat-conducting adhesive layer, so that the light emitted by the LED chip can be effectively transmitted to the support, the heat of the LED chip is reduced, and the reduction of the luminous flux emitted by the LED chip is avoided; simultaneously, separate LED chip and phosphor powder through setting up first silica gel layer, avoid the LED chip to generate heat the excitation effect that influences the phosphor powder to avoid appearing the color coordinate drift problem.
Drawings
FIG. 1 is a schematic diagram of a prior art LED lamp;
FIG. 2 is a schematic diagram of a prior art LED lamp after a phosphor deposition process;
FIG. 3 is a graph showing the variation of the phosphor excitation efficiency with respect to temperature;
FIG. 4 is a graph showing the relationship between the brightness and the temperature of the LED chip;
fig. 5 is a schematic flowchart of an LED packaging method according to a first embodiment of the invention;
fig. 6 is a schematic flow chart of an LED packaging method according to a second embodiment of the present invention;
fig. 7 is another schematic flow chart of an LED packaging method according to a second embodiment of the invention;
fig. 8 is another schematic flow chart illustrating an LED packaging method according to a second embodiment of the invention;
fig. 9 is a schematic view illustrating a first die attach adhesive according to a second embodiment of the present invention;
fig. 10 is a schematic view illustrating a thermal conductive adhesive layer formed by the first die attach adhesive according to the second embodiment of the present invention;
fig. 11 is a schematic view illustrating a second die attach adhesive according to a second embodiment of the present invention;
fig. 12 is a schematic view illustrating a second die attach adhesive layer forming a transparent adhesive layer according to a second embodiment of the present invention;
fig. 13 is a schematic structural view of an LED lamp according to a second embodiment of the present invention;
FIG. 14 is a graph of the light maintenance ratio at different temperatures for LED lamps made using conventional processes and the method of the present invention;
FIG. 15 is a graph comparing spectra of LED lamps made using conventional processes and the method of the present invention;
FIG. 16 is a graph showing a comparison of the color temperature change at different temperatures for LED lamps made using conventional processes and the method of the present invention.
Description of reference numerals:
100. a support; 110. a heat-conducting adhesive layer; 111. first die attach adhesive; 120. a transparent adhesive layer; 121. second die attach adhesives; 130. a first silica gel layer; 140. a second silica gel layer 141, phosphor; 200. an LED chip; 300. and (5) a die bonding adhesive layer.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1, in a conventional LED production process, an LED chip 200 is fixed on a support 100 through a die attach adhesive layer 300, and a phosphor 141 and silica gel are mixed and then disposed on the support 100 and above the LED chip 200. After the LED chip 200 is turned on, the temperature can reach 150 ℃ at most, and as can be seen from the relationship between the LED chip 200 and the temperature in fig. 4, the LED chip 200 generates heat during the heating process, so that the brightness of the LED chip 200 is reduced. In addition, as can be seen from the relationship between the excitation efficiency of the phosphor 141 and the temperature in fig. 3, the heat generated by the LED chip 200 is transferred to the phosphor 141, which may cause the excitation effect of the phosphor 141 to be reduced, cause the color coordinate to drift, and affect the color temperature performance of the LED lamp.
Referring to fig. 2, in the current production process, the phosphor 141 is deposited and attached on the LED chip 200 and the support 100 by a phosphor 141 deposition process, and heat is guided to the support 100 by the phosphor 141, so that the heat of the chip is reduced and the luminous flux is increased. Although the problem of heat generation of the LED chip 200 is solved, the fluorescent powder 141 may affect its own excitation effect after receiving the heat transferred by the LED chip 200, resulting in a color coordinate drift problem, thereby affecting the color temperature of the LED lamp finished product. Therefore, it is desirable to provide an LED packaging method and an LED lamp to solve the above problems.
Example one
Referring to fig. 5 and 13 to 16, a first embodiment of the present invention is: an LED packaging method is applied to the production process of LED lamps, LED modules and the like.
The LED packaging method comprises the following steps:
s11, providing a support 100 and at least one LED chip 200;
s12, fixing the LED chip 200 on the support 100 through the thermal conductive adhesive layer 110;
s13, performing wire bonding on the LED chip 200 and the support 100;
s14, disposing the first silicone layer 130 covering the LED chip 200 on the support 100;
s15, disposing the second silicone gel layer 140 mixed with the phosphor 141 on the first silicone gel layer 130.
The working principle of the LED packaging method in this embodiment is as follows: the LED chip 200 is fixed on the support 100 through the thermal conductive adhesive layer 110, and conducts heat to the support 100 when the LED chip 200 emits light. After wire bonding, layered dispensing is performed, that is, the first silicone rubber layer 130 covering the LED chip 200 is disposed on the support 100, and then the second silicone rubber layer 140 mixed with phosphor 141 is disposed on the first silicone rubber layer 130, so as to separate the LED chip 200 and the phosphor 141.
Referring to fig. 14 to 16, by comparison, compared with the LED lamp manufactured by the conventional process, the LED lamp manufactured by the layered dispensing of the present invention has better light maintenance rate and less spectrum variation; meanwhile, the color temperature of the LED lamp manufactured by the method is not greatly changed at different temperatures.
Therefore, compared to the prior art, by the above method, when the LED chip 200 emits light, heat is conducted to the support 100 through the thermal conductive adhesive layer 110, so that the light flux emitted by the LED chip 200 is prevented from being reduced, that is, the phenomenon of thermal attenuation is avoided. In addition, in this embodiment, layered dispensing is performed, and the LED chip 200 is separated from the phosphor 141 by the first silica gel layer 130, so that the heat transfer efficiency between the LED chip 200 and the phosphor 141 can be effectively reduced, and the phenomenon of color coordinate drift due to the influence on the excitation effect of the phosphor 141 is avoided, so that the color temperature of the LED lamp is kept normal. In this embodiment, the phosphors 141 include red phosphors 141 and yellow-green phosphors 141.
Example two
Referring to fig. 6 to 16, a second embodiment of the present invention provides another specific implementation of the LED packaging method.
The LED packaging method comprises the following steps:
s20, providing a support 100 and at least one LED chip 200;
s21, fixing the LED chip 200 on the support 100 through the thermal conductive adhesive layer 110;
s22, fixing the edge of the LED chip 200 on the support 100 through the transparent adhesive layer 120.
S23, performing wire bonding on the LED chip 200 and the support 100;
s24, disposing the first silicone layer 130 covering the LED chip 200 on the support 100;
s25, disposing the second silicone gel layer 140 mixed with the phosphor 141 on the first silicone gel layer 130.
The working principle of the LED packaging method in this embodiment is as follows: the LED chip 200 is fixed on the support 100 through the thermal conductive adhesive layer 110, and when the LED chip 200 emits light, heat is conducted to the support 100, and then the transparent adhesive layer 120 is disposed to further fix the edge of the LED chip 200 on the support 100. After wire bonding, layered dispensing is performed, that is, the first silicone rubber layer 130 covering the LED chip 200 is disposed on the support 100, and then the second silicone rubber layer 140 mixed with phosphor 141 is disposed on the first silicone rubber layer 130, so as to separate the LED chip 200 and the phosphor 141.
Referring to fig. 14 to 16, by comparison, compared with the LED lamp manufactured by the conventional process, the LED lamp manufactured by the layered dispensing of the present invention has better light maintenance rate and less spectrum variation; meanwhile, the color temperature of the LED lamp manufactured by the method is not greatly changed at different temperatures.
By the above method, when the LED chip 200 emits light, heat is conducted to the support 100 through the thermal conductive adhesive layer 110, so that the light flux emitted by the LDE chip is prevented from being reduced, that is, the phenomenon of thermal attenuation is avoided. In addition, the LED chip 200 is separated from the phosphor 141 by the first silica gel layer 130, so that the heat transfer efficiency between the LED chip 200 and the phosphor 141 can be effectively reduced, and the phenomenon of color coordinate drift caused by the influence on the excitation effect of the phosphor 141 is avoided, so that the color temperature of the LED lamp is kept normal. In this embodiment, the phosphors 141 include red phosphors 141 and yellow-green phosphors 141.
Further, in this embodiment, twice dispensing is performed in the die bonding process, after the LED chip 200 is fixed by the heat conductive adhesive layer 110, the edge of the LED chip 200 is bonded to the support 100 by the transparent adhesive layer 120, on one hand, the LED chip 200 can be further reinforced, and meanwhile, the thickness of the heat conductive adhesive layer can be correspondingly reduced, so that the heat conduction efficiency of the heat conductive adhesive layer 110 is improved, and the light emitting path of the LED chip 200 cannot be blocked; on the other hand, the transparent adhesive layer 120 may also perform auxiliary heat conduction on the LED chip 200, so as to further improve the heat dissipation effect.
Referring to fig. 7, 9 and 10, S21, the step of fixing the LED chip 200 on the support 100 by the thermal conductive adhesive layer 110 includes:
s211, providing a first die attach adhesive 111, and disposing the first die attach adhesive 111 on the bracket 100;
in this step, the step of disposing the first die attach adhesive 111 on the support 100 includes:
at least two first die attach adhesives 111 are disposed on the bracket 100 at positions corresponding to the mounting positions of the LED chips 200.
It can be understood that, with the above arrangement, the situation that the LED chip 200 is deflected when placed on the first die attach adhesive 111 can be reduced. In this embodiment, the first die attach adhesive 111 is disposed on the bracket 100 in a dispensing manner, the first die attach adhesive 111 is a milky die attach adhesive with good thermal conductivity, and the milky die attach adhesive can be selected from the group consisting of transcation T7, and has a thermal conductivity of 1W/(m · K).
S212, placing the LED chip 200 on the first die attach adhesive 111;
s213, applying pressure to the LED chip 200 to diffuse the first die attach adhesive 111, and curing to form the thermal conductive adhesive layer 110.
In the embodiment, since the thermal resistance of the die attach adhesive is in direct proportion to the thickness of the die attach adhesive, and the thermal resistance of the die attach adhesive is in inverse proportion to the thermal conductivity and the cross-sectional area of the die attach adhesive, after the first die attach adhesive 111 is diffused, the thickness of the thermal conductive adhesive layer 110 is smaller than 5 μm, so as to reduce the thermal resistance of the first die attach adhesive 111 and improve the heat transfer efficiency.
Further, the heat-conducting adhesive layer is located in a projection range of the LED chip on the support.
It can be understood that, since the first die attach adhesive 111 is a milky die attach adhesive, the transmittance is poor, and the glue overflowing by diffusion is attached to the LED chip 200, which may cause the light emitting path of the LED chip 200 to be blocked, thereby affecting the light emitting effect. Therefore, in the process of applying pressure to the LED chip 200 in this embodiment, the first die attach adhesive 111 is controlled to diffuse to a position not exceeding the edge of the LED chip 200, so that the heat conductive adhesive layer formed by baking and curing is located in the projection range of the LED chip on the support, and the edge of the LED chip 200 is further reinforced by the transparent adhesive layer 120.
Referring to fig. 8, 11 and 12, S22, the step of fixing the edge of the LED chip 200 on the support 100 through the transparent adhesive layer 120 includes:
s221, providing a second die attach adhesive 121, and disposing a plurality of second die attach adhesives 121 on the edge of the support 100 close to the LED chip 200;
in this step, the second die attach adhesives 121 are disposed on the support 100 in a dispensing manner, and 10 second die attach adhesives 121 are disposed at intervals along the perimeter direction of the edge of the LED chip 200, so as to ensure firm bonding at each position of the edge of the LED chip 200 and improve the structural stability of the LED lamp.
S222, diffusing and curing the second die attach adhesive 121 to form the transparent adhesive layer 120.
The amount of the second die attach adhesive 121 is controlled, so that the height of the transparent adhesive layer 120 is less than one third of the height of the LED chip 200.
In this step, the second die attach adhesive 121 is disposed on the support 100, and then is left to diffuse, and is baked and cured to form the transparent adhesive layer 120. The second solid crystal glue 121 is transparent solid crystal glue with good light transmittance, in this embodiment, the second solid crystal glue 121 is shin-pass LPS-8448 solid crystal glue, and the thermal conductivity is 0.2W/(m · K).
Specifically, the step of performing wire bonding on the LED chip 200 and the support 100 in S23 includes:
and S231, welding the positive and negative electrodes of the LED chip 200 corresponding to the positive and negative electrode interfaces of the bracket 100.
Specifically, the step of providing the first silicone gel layer 130 covering the LED chip 200 on the support 100 in S24 includes;
s241, providing a first silica gel, disposing the first silica gel on the support 100, and covering the LED chip 200;
in this step, the first silicone gel may be disposed on the support 100 in a dispensing manner, wherein the first silicone gel at least covers the top end of the LED chip 200.
S242, baking and curing the first silica gel to form the first silica gel layer 130.
Specifically, the step of providing the second silicone gel layer 140 mixed with the phosphor 141 on the first silicone gel layer 130 of S25 includes:
s251, providing a second silica gel, disposing the second silica gel on the support 100, and covering the LED chip 200;
in this step, the second silicone gel may be disposed on the support 100 in a dispensing manner.
S252, baking and curing the second silica gel to form the second silica gel layer 140.
Through the steps, the invention carries out layered dispensing,
in order to better reduce the heat of the LED chip 200, the material of the bracket 100 is C194 red copper, which can provide good thermal conductivity. In this embodiment, the thickness of the bracket 100 is reduced to 0.15mm to reduce the thermal resistance of the bracket 100, and it should be noted that the too thin copper material may cause the bracket 100 to be easily removed and the breaking force of the bracket 100 to be too low to be used. Therefore, in this embodiment, the copper bracket 100 with a thickness of 0.15mm is adopted, so that heat generated by the LED chip 200 can be effectively conducted downwards through the bracket 100, and the strength of the bracket 100 can be ensured. Since the phosphor 141 is separated by the first silica gel layer 130, it is not affected by heat generated from the LED chip 200, and thus the phosphor 141 can achieve an optimal excitation effect.
Referring to fig. 13, the present embodiment further provides an LED lamp, and the LED lamp is manufactured by any one of the LED packaging methods described above. Specifically, the LED lamp includes a support 100 and at least one LED chip 200, a thermal conductive adhesive layer 110 and a transparent adhesive layer 120 are disposed on the support 100, the LED chip 200 is connected to the support 100 through the thermal conductive adhesive layer 110, and the edge of the LED chip 200 is connected to the support 100 through the transparent adhesive layer 120; the support 100 is further provided with a first silica gel layer 130 and a second silica gel layer 140, the first silica gel layer 130 at least covers the top end of the LED chip 200, the second silica gel layer 140 is mixed with red phosphor 141 and yellow-green phosphor 141, and the second silica gel layer 140 is arranged above the first silica gel layer 130.
In summary, according to the LED packaging method and the LED lamp provided by the invention, the heat of the LED chip is conducted to the support through the heat conductive adhesive layer, so that the thermal attenuation of the LED lamp is reduced; meanwhile, the LED chip and the fluorescent powder are separated through the first silica gel layer, so that the heat generated by the LED chip is prevented from influencing the excitation of the fluorescent powder, and the color coordinate drift of the LED lamp is reduced; in addition, the edge of the LED chip is fixed on the support through the transparent adhesive layer, so that the structural stability of the LED lamp is further ensured; on the other hand, the thickness of the heat-conducting adhesive layer can be correspondingly reduced, so that the heat conduction efficiency is improved, and the transparent adhesive layer can also conduct a part of heat generated by the LED chip, so that the heat dissipation efficiency is further improved.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent modifications made by the contents of the present specification and the drawings, or applied to the related technical fields directly or indirectly, are included in the scope of the present invention.
Claims (10)
1. An LED packaging method, comprising the steps of:
providing a support and at least one LED chip;
fixing the LED chip on the bracket through a heat-conducting adhesive layer;
carrying out wire bonding treatment on the LED chip and the bracket;
arranging a first silica gel layer covering the LED chip on the support;
and a second silica gel layer mixed with fluorescent powder is arranged on the first silica gel layer.
2. The LED packaging method of claim 1, wherein the step of fixing the LED chip on the support via a thermal conductive adhesive layer further comprises:
and fixing the edge of the LED chip on the support through a transparent adhesive layer.
3. The LED packaging method according to claim 1, wherein the step of fixing the LED chip on the support through a thermal conductive adhesive layer comprises;
providing first die attach adhesive, and arranging the first die attach adhesive on the bracket;
placing the LED chip on the first die attach adhesive;
and applying pressure to the LED chip to diffuse the first die bond adhesive and solidify to form the heat-conducting adhesive layer.
4. The LED packaging method according to claim 3, wherein the step of disposing the first die attach adhesive on the support comprises:
and arranging at least two first die attach adhesives on the bracket corresponding to the mounting positions of the LED chips.
5. The LED packaging method according to claim 3, wherein the thermal conductive adhesive layer is located in a projection range of the LED chip on the support.
6. The LED packaging method of claim 1, wherein the thickness of the thermal adhesive layer is less than 5 μm.
7. The LED packaging method according to claim 2, wherein the step of fixing the edge of the LED chip on the support through a transparent adhesive layer comprises:
providing second die attach adhesives, and arranging a plurality of second die attach adhesives on the edge of the bracket close to the LED chip;
and diffusing and curing the second die bond adhesive to form the transparent adhesive layer.
8. The LED packaging method according to claim 2, wherein the height of the transparent adhesive layer is less than one third of the height of the LED chip.
9. The method of claim 1, wherein the support is made of C194 red copper.
10. An LED lamp, wherein the LED lamp is manufactured by the LED packaging method according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111365071.8A CN114242848A (en) | 2021-11-17 | 2021-11-17 | LED packaging method and LED lamp |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111365071.8A CN114242848A (en) | 2021-11-17 | 2021-11-17 | LED packaging method and LED lamp |
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| CN114242848A true CN114242848A (en) | 2022-03-25 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101984510A (en) * | 2010-08-20 | 2011-03-09 | 符建 | Flexibly connected light-emitting diode (LED) device based on liquid metal base |
| CN202633375U (en) * | 2012-02-17 | 2012-12-26 | 北京佰能光电技术有限公司 | White-light LED packaging structure |
| CN104993034A (en) * | 2015-07-21 | 2015-10-21 | 广东广晟光电科技有限公司 | Novel LED packaging process |
| CN207781647U (en) * | 2017-12-21 | 2018-08-28 | 陕西光电科技有限公司 | A kind of specular removal White-light LED package structure |
| CN111668170A (en) * | 2020-06-05 | 2020-09-15 | 矽力杰半导体技术(杭州)有限公司 | Die bonding structure and manufacturing method thereof |
-
2021
- 2021-11-17 CN CN202111365071.8A patent/CN114242848A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101984510A (en) * | 2010-08-20 | 2011-03-09 | 符建 | Flexibly connected light-emitting diode (LED) device based on liquid metal base |
| CN202633375U (en) * | 2012-02-17 | 2012-12-26 | 北京佰能光电技术有限公司 | White-light LED packaging structure |
| CN104993034A (en) * | 2015-07-21 | 2015-10-21 | 广东广晟光电科技有限公司 | Novel LED packaging process |
| CN207781647U (en) * | 2017-12-21 | 2018-08-28 | 陕西光电科技有限公司 | A kind of specular removal White-light LED package structure |
| CN111668170A (en) * | 2020-06-05 | 2020-09-15 | 矽力杰半导体技术(杭州)有限公司 | Die bonding structure and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 陈元灯，陈宇: "LED制造技术与应用", vol. 978, 31 July 2010, 电子工业出版社, pages: 51 - 70 * |
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