CN114242840B - SE-matched solar cell diffusion method - Google Patents
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 103
- 230000008021 deposition Effects 0.000 claims abstract description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 55
- 239000001301 oxygen Substances 0.000 claims abstract description 55
- 230000003647 oxidation Effects 0.000 claims abstract description 37
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005137 deposition process Methods 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 132
- 229910052757 nitrogen Inorganic materials 0.000 claims description 66
- 238000000151 deposition Methods 0.000 claims description 58
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 48
- 230000001105 regulatory effect Effects 0.000 claims description 27
- 230000001276 controlling effect Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000002045 lasting effect Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention relates to a solar cell diffusion method matched with SE, and belongs to the technical field of solar cell production. Comprising the following steps: pre-deposition; primary deposition; primary oxidation; secondary deposition; secondary oxidation; propelling; cooling; oxidizing for three times; three times of deposition; performing four times of oxidation; four times of deposition; oxygen is introduced. By arranging four deposition steps, the diffusion reaction is more sufficient, and the reaction residues are reduced. By heating up the deposition, the activity P can be activated in the deposition process, and the efficiency of the battery piece is improved. In addition, through a few multiple oxidation of multistep, make the reaction more thorough, increased oxide thickness, can effectively reduce the damage of SE laser to surface texture, reduced the influence of follow-up deposition to silicon substrate surface concentration simultaneously, when guaranteeing that good ohmic contact can be obtained behind the SE laser, reduce surface concentration, improve minority carrier lifetime, increased the overall efficiency of battery piece.
Description
Technical Field
The invention relates to the technical field of solar cell production, in particular to a solar cell diffusion method matched with SE.
Background
At present, according to a Perce cell stacking SE (selective emitter) process, P in a PSG layer is pushed by laser so that ohmic contact of a positive electrode area is greatly reduced, meanwhile, surface concentration in an overall diffusion process is reduced, surface recombination is reduced, and overall efficiency of a cell is effectively improved.
However, since SE laser has a large energy, the pile face is easily damaged during the pushing process, and the efficiency of the battery sheet is reduced. In addition, the secondary through source after pushing can also increase the surface deposition concentration, aggravate surface recombination, and cause adverse effect on the efficiency of the battery piece.
Disclosure of Invention
In order to solve the technical problems, the invention provides a solar cell diffusion method matched with SE. The technical scheme is as follows:
a SE-matched solar cell diffusion method comprising the steps of:
s1, pre-deposition: placing the silicon substrate into a diffusion furnace, controlling the temperature in the furnace to be 720-800 ℃, introducing oxygen into the diffusion furnace at a flow of 400-1200sccm, introducing nitrogen into the diffusion furnace at a flow of 800-1800sccm, and generating silicon oxide by the reaction of the oxygen and the silicon, so as to deposit an oxide layer on the silicon substrate for 90-210s;
s2, primary deposition: controlling the temperature of the diffusion furnace at 760-790 ℃, adjusting the nitrogen flow to 700-1500sccm, adjusting the oxygen flow to 500-800sccm, introducing phosphorus oxychloride into the diffusion furnace at the flow of 500-1000sccm, and then diffusing to deposit a phosphorus source on the surface of the silicon substrate, wherein the reaction lasts for 180-360s;
s3, primary oxidation: controlling the temperature of the diffusion furnace at 775-805 ℃, regulating the nitrogen flow to 800-2000sccm, regulating the oxygen flow to 300-800sccm, and depositing an oxide layer on the diffused oxide layer for 30-120s;
s4, secondary deposition: controlling the temperature of the diffusion furnace at 775-805 ℃, introducing phosphorus oxychloride at a flow rate of 500-1000sccm, adjusting the oxygen flow rate to 500-800sccm, performing secondary deposition to activate the activity P, and lasting for 180-360s;
s5, secondary oxidation: controlling the temperature of the diffusion furnace at 775-805 ℃, adjusting the nitrogen flow to 800-2000sccm, adjusting the oxygen flow to 300-800sccm for secondary oxidation, and continuously performing for 60-120s to remove reaction residues in the secondary deposition process and increase an oxide layer;
s6, propelling: controlling the temperature of the diffusion furnace at 830-880 ℃, adjusting the flow rate of nitrogen to 1000-2500sccm for propulsion, continuously performing 600-1000s, and diffusing P to the surface of the silicon substrate through high temperature;
s7, cooling: the temperature of the diffusion furnace is controlled to be 780-820 ℃, the temperature is kept for 900-1800 seconds, and the flow of nitrogen is regulated to be 1000-3000sccm;
s8, three times of oxidation: controlling the temperature of the diffusion furnace at 775-805 ℃ for 60-120s, adjusting the flow of nitrogen to 800-2000sccm and the flow of oxygen to 300-800sccm to continuously increase the thickness of the oxide layer and provide a deposition oxidation atmosphere;
s9, three times of deposition: controlling the temperature of the diffusion furnace at 775-805 ℃, regulating the flow of nitrogen to 700-1500sccm, regulating the flow of phosphorus oxychloride to 500-800sccm, and continuously maintaining for 180-360s to deposit a P source on the surface of the oxide layer so as to prepare for a SE process;
s10, four times of oxidation: controlling the temperature of the diffusion furnace at 760-790 ℃, adjusting the nitrogen flow to 800-2000sccm, adjusting the oxygen flow to 300-600sccm, and continuously maintaining for 60-120s to remove reaction residues in the three deposition processes and increase an oxide layer;
s11, four depositions: controlling the temperature of a diffusion furnace at 760-790 ℃, adjusting the flow of nitrogen to 700-1500sccm, adjusting the flow of phosphorus oxychloride to 500-1000sccm, adjusting the flow of oxygen to 500-1000sccm, and depositing a high-concentration P source on the surface of an oxide layer for 120-300s, so as to prepare for an SE process;
s12, introducing oxygen: the temperature of the diffusion furnace is controlled between 760 and 790 ℃, the flow rate of nitrogen is adjusted to 1000-3000sccm, the flow rate of oxygen is adjusted to 500-1000sccm, and the duration is between 90 and 150 seconds, so that reaction residues in four deposition processes are removed.
Preferably, the technological parameters of each step are as follows:
s1, pre-deposition: the temperature is 780 ℃, the oxygen flow is 600sccm, the nitrogen flow is 1500sccm, and the duration is 150s;
s2, primary deposition: the deposition temperature is 785 ℃, the diffusion time is 210s, the nitrogen flow is 1200sccm, and the phosphorus oxychloride flow is 800sccm;
s3, primary oxidation: the temperature is 795 ℃, the duration is 60s, the nitrogen flow is 1000sccm, and the oxygen flow is 600sccm;
s4, secondary deposition: the deposition temperature is 795 ℃, the diffusion time is 180s, and the flow rate of phosphorus oxychloride is 800sccm;
s5, secondary oxidation: the temperature is 795 ℃, the duration is 90s, the nitrogen flow is 1500sccm, and the oxygen flow is 400sccm;
s6, propelling: the temperature is 850 ℃, the duration is 900s, and the nitrogen flow is 2000sccm;
s7, cooling: the temperature is 810 ℃, the duration is 1500s, and the nitrogen flow is 2500sccm;
s8, three times of oxidation: the temperature is 805 ℃, the duration is 90s, the nitrogen flow is 1200sccm, and the oxygen flow is 500sccm;
s9, three times of deposition: the deposition temperature is 800 ℃, the diffusion time is 240s, the nitrogen flow is 1200sccm, and the phosphorus oxychloride flow is 500sccm;
s10, four times of oxidation: the temperature is 790 ℃, the duration is 90s, the nitrogen flow is 1500sccm, and the oxygen flow is 400sccm;
s11, four depositions: the deposition temperature is 790 ℃, the diffusion time is 240s, the nitrogen flow is 1200sccm, and the phosphorus oxychloride flow is 800sccm;
s12, introducing oxygen: the temperature was 780℃and the duration was 120s, the nitrogen flow was 2500sccm and the oxygen flow was 800sccm.
Preferably, the pressure in the diffusion furnace is maintained at 50-100 mbar.
Preferably, the pressure in the diffusion furnace is maintained at 80mbar.
Preferably, the step S1 of placing the silicon substrate in a diffusion furnace includes: the silicon substrates are placed back to back in a quartz boat, and then the quartz boat is placed in a diffusion furnace.
Preferably, the diffusion furnace is a low-pressure tube furnace.
By means of the scheme, the four deposition steps are arranged, so that the diffusion reaction is more sufficient, and reaction residues are reduced. By heating up the deposition, the activity P can be activated in the deposition process, and the efficiency of the battery piece is improved. In addition, through a small amount of multiple oxidation of the steps, the reaction is more thorough, the thickness of an oxide layer is increased, the damage of SE laser to surface texture can be effectively reduced, meanwhile, the increase of surface concentration caused by secondary through source after cooling is effectively reduced, good ohmic contact can be obtained after SE laser, meanwhile, the surface concentration is reduced, the minority carrier lifetime is prolonged, and the overall efficiency of the battery piece is increased.
The foregoing description is only an overview of the present invention, and is intended to provide a better understanding of the present invention, as it is embodied in the following description, with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
Fig. 1 is a flow chart of the present invention.
Fig. 2 is a schematic diagram showing the result of a conventional diffusion method.
FIG. 3 is a schematic illustration of the results of the diffusion process provided by the present invention.
Detailed Description
The following describes in further detail the embodiments of the present invention with reference to the drawings and examples. The following examples are illustrative of the invention and are not intended to limit the scope of the invention.
As shown in fig. 1, the SE-matching solar cell diffusion method provided by the invention comprises the following steps:
s1, pre-deposition: placing the silicon substrate into a diffusion furnace, controlling the temperature in the furnace at 720-800 ℃, introducing oxygen into the diffusion furnace at a flow of 400-1200sccm, introducing nitrogen into the diffusion furnace at a flow of 800-1800sccm, and reacting the oxygen with silicon to generate silicon oxide, so as to deposit an oxide layer on the silicon substrate for 90-210s. The oxide layer generated after the shortage mainly plays a role in buffering and reduces a diffusion dead layer.
S2, primary deposition: the temperature of the diffusion furnace is controlled at 760-790 ℃, the flow rate of nitrogen is regulated to 700-1500sccm, the flow rate of oxygen is regulated to 500-800sccm, phosphorus oxychloride is introduced into the diffusion furnace at the flow rate of 500-1000sccm, and then diffusion is carried out, so that a phosphorus source is deposited on the surface of the silicon substrate, and the reaction lasts for 180-360s.
S3, primary oxidation: the temperature of the diffusion furnace is controlled between 775 and 805 ℃, the flow rate of nitrogen is regulated to 800-2000sccm, the flow rate of oxygen is regulated to 300-800sccm, so that an oxide layer is deposited on the diffused oxide layer for 30-120s.
S4, secondary deposition: controlling the temperature of the diffusion furnace at 775-805 ℃, introducing phosphorus oxychloride at a flow rate of 500-1000sccm, adjusting the oxygen flow rate to 500-800sccm, and performing secondary deposition to activate the activity P for 180-360s.
S5, secondary oxidation: the temperature of the diffusion furnace is controlled between 775 ℃ and 805 ℃, the flow rate of nitrogen is regulated to 800sccm to 2000sccm, the flow rate of oxygen is regulated to 300 sccm to 800sccm for secondary oxidation, and the secondary oxidation lasts for 60s to 120s, so that reaction residues in the secondary deposition process are removed and an oxide layer is added.
S6, propelling: the temperature of the diffusion furnace is controlled at 830-880 ℃, the nitrogen flow is regulated to 1000-2500sccm for propulsion, the duration is 600-1000s, and P is diffused to the surface of the silicon substrate through high temperature.
S7, cooling: the temperature of the diffusion furnace is controlled to be 780-820 ℃, the temperature is kept for 900-1800s, and the flow of nitrogen is regulated to be 1000-3000sccm.
S8, three times of oxidation: the temperature of the diffusion furnace is controlled between 775 ℃ and 805 ℃ for 60 to 120 seconds, the flow of nitrogen is regulated to 800 to 2000sccm, and the flow of oxygen is regulated to 300 to 800sccm, so that the thickness of the oxide layer is continuously increased, and a deposition oxidation atmosphere is provided.
S9, three times of deposition: the temperature of the diffusion furnace is controlled between 775 and 805 ℃, the flow rate of nitrogen is regulated to 700 to 1500sccm, the flow rate of phosphorus oxychloride is regulated to 500 to 800sccm, and the duration is 180 to 360 seconds, so that a P source is deposited on the surface of an oxide layer, and preparation is made for a SE process.
S10, four times of oxidation: the temperature of the diffusion furnace is controlled between 760 and 790 ℃, the flow rate of nitrogen is regulated to 800 to 2000sccm, the flow rate of oxygen is regulated to 300 to 600sccm, and the duration is 60 to 120 seconds, so that reaction residues in the three deposition processes are removed, and an oxide layer is increased.
S11, four depositions: the temperature of the diffusion furnace is controlled to 760-790 ℃, the flow rate of nitrogen is regulated to 700-1500sccm, the flow rate of phosphorus oxychloride is regulated to 500-1000sccm, the flow rate of oxygen is regulated to 500-1000sccm, the diffusion time is 120-300s, and a high-concentration P source is deposited on the surface of an oxide layer, so that preparation is made for an SE process.
S12, introducing oxygen: the temperature of the diffusion furnace is controlled between 760 and 790 ℃, the flow rate of nitrogen is adjusted to 1000-3000sccm, the flow rate of oxygen is adjusted to 500-1000sccm, and the duration is between 90 and 150 seconds, so that reaction residues in four deposition processes are removed.
Optionally, in the above steps S1-S12, the pressure in the diffusion furnace is maintained at 50-100 mbar.
In another embodiment, production practice shows that when the process parameters of the steps are as follows, the diffusion effect is better:
s1, pre-deposition: the temperature is 780 ℃, the oxygen flow is 600sccm, the nitrogen flow is 1500sccm, and the duration is 150s;
s2, primary deposition: the deposition temperature is 785 ℃, the diffusion time is 210s, the nitrogen flow is 1200sccm, and the phosphorus oxychloride flow is 800sccm;
s3, primary oxidation: the temperature is 795 ℃, the duration is 60s, the nitrogen flow is 1000sccm, and the oxygen flow is 600sccm;
s4, secondary deposition: the deposition temperature is 795 ℃, the diffusion time is 180s, and the flow rate of phosphorus oxychloride is 800sccm;
s5, secondary oxidation: the temperature is 795 ℃, the duration is 90s, the nitrogen flow is 1500sccm, and the oxygen flow is 400sccm;
s6, propelling: the temperature is 850 ℃, the duration is 900s, and the nitrogen flow is 2000sccm;
s7, cooling: the temperature is 810 ℃, the duration is 1500s, and the nitrogen flow is 2500sccm;
s8, three times of oxidation: the temperature is 805 ℃, the duration is 90s, the nitrogen flow is 1200sccm, and the oxygen flow is 500sccm;
s9, three times of deposition: the deposition temperature is 800 ℃, the diffusion time is 240s, the nitrogen flow is 1200sccm, and the phosphorus oxychloride flow is 500sccm;
s10, four times of oxidation: the temperature is 790 ℃, the duration is 90s, the nitrogen flow is 1500sccm, and the oxygen flow is 400sccm;
s11, four depositions: the deposition temperature is 790 ℃, the diffusion time is 240s, the nitrogen flow is 1200sccm, and the phosphorus oxychloride flow is 800sccm;
s12, introducing oxygen: the temperature was 780℃and the duration was 120s, the nitrogen flow was 2500sccm and the oxygen flow was 800sccm.
Preferably, the diffusion effect is good when the pressure in the diffusion furnace is kept at 80mbar.
Specifically, in S1, the silicon substrate is placed into a diffusion furnace, specifically: the silicon substrates are placed back to back in a quartz boat, and then the quartz boat is placed in a diffusion furnace.
Preferably, the diffusion furnace adopts a low-pressure tube furnace, and the diffusion furnace in the form can meet the diffusion process requirement and has better economy.
All the above optional technical solutions can be arbitrarily combined, and the detailed description of the structures after one-to-one combination is omitted.
As shown in fig. 2 and 3, which are schematic diagrams of the results of the conventional diffusion method and the diffusion method provided by the present invention, respectively.
The pile surface of the region after SE laser propulsion is observed through SEM (scanning electron microscope) magnification by 1W, obvious P particles are separated out from the top end of the pile surface pyramid by the process of the embodiment of the invention, and obvious P particles are not separated out from the top end of the pyramid by the traditional process.
The following table is a comparative table of parameters of solar cells prepared by conventional diffusion methods and diffusion methods provided by the present invention.
As can be obtained from the first table, the efficiency Eta of the diffusion method provided by the invention is improved by 0.08, the improvement is mainly shown in that the open voltage Uoc is improved by 1.3mV, the current Isc is higher by 50mA, and the FF is lower by 0.27.
According to the method provided by the embodiment of the invention, the four deposition steps are arranged, so that the diffusion reaction is more sufficient, and the reaction residues are reduced. By heating up the deposition, the activity P can be activated in the deposition process, and the efficiency of the battery piece is improved. In addition, in the whole process, the thickness of the oxide layer is increased through multiple times of oxidation, so that the damage of SE laser to the silicon substrate can be effectively reduced, the influence of subsequent deposition on the surface concentration of the silicon substrate is reduced, the surface concentration is reduced, the minority carrier lifetime is prolonged, and the efficiency of the battery piece is increased while good ohmic contact after SE laser is ensured.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, and it should be noted that it is possible for those skilled in the art to make several improvements and modifications without departing from the technical principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.
Claims (6)
1. A solar cell diffusion method matched with SE, comprising the steps of:
s1, pre-deposition: placing the silicon substrate into a diffusion furnace, controlling the temperature in the furnace to be 720-800 ℃, introducing oxygen into the diffusion furnace at a flow of 400-1200sccm, introducing nitrogen into the diffusion furnace at a flow of 800-1800sccm, and generating silicon oxide by the reaction of the oxygen and the silicon, so as to deposit an oxide layer on the silicon substrate for 90-210s;
s2, primary deposition: controlling the temperature of the diffusion furnace at 760-790 ℃, adjusting the nitrogen flow to 700-1500sccm, adjusting the oxygen flow to 500-800sccm, introducing phosphorus oxychloride into the diffusion furnace at the flow of 500-1000sccm, and then diffusing to deposit a phosphorus source on the surface of the silicon substrate, wherein the reaction lasts for 180-360s;
s3, primary oxidation: controlling the temperature of the diffusion furnace at 775-805 ℃, regulating the nitrogen flow to 800-2000sccm, regulating the oxygen flow to 300-800sccm, and depositing an oxide layer on the diffused oxide layer for 30-120s;
s4, secondary deposition: controlling the temperature of the diffusion furnace at 775-805 ℃, introducing phosphorus oxychloride at a flow rate of 500-1000sccm, adjusting the oxygen flow rate to 500-800sccm, performing secondary deposition to activate the activity P, and lasting for 180-360s;
s5, secondary oxidation: controlling the temperature of the diffusion furnace at 775-805 ℃, adjusting the nitrogen flow to 800-2000sccm, adjusting the oxygen flow to 300-800sccm for secondary oxidation, and continuously performing for 60-120s to remove reaction residues in the secondary deposition process and increase an oxide layer;
s6, propelling: controlling the temperature of the diffusion furnace at 830-880 ℃, adjusting the flow rate of nitrogen to 1000-2500sccm for propulsion, continuously performing 600-1000s, and diffusing P to the surface of the silicon substrate through high temperature;
s7, cooling: the temperature of the diffusion furnace is controlled to be 780-820 ℃, the temperature is kept for 900-1800 seconds, and the flow of nitrogen is regulated to be 1000-3000sccm;
s8, three times of oxidation: controlling the temperature of the diffusion furnace at 775-805 ℃ for 60-120s, adjusting the flow of nitrogen to 800-2000sccm and the flow of oxygen to 300-800sccm to continuously increase the thickness of the oxide layer and provide a deposition oxidation atmosphere;
s9, three times of deposition: controlling the temperature of the diffusion furnace at 775-805 ℃, regulating the flow of nitrogen to 700-1500sccm, regulating the flow of phosphorus oxychloride to 500-800sccm, and continuously maintaining for 180-360s to deposit a P source on the surface of the oxide layer so as to prepare for a SE process;
s10, four times of oxidation: controlling the temperature of the diffusion furnace at 760-790 ℃, adjusting the nitrogen flow to 800-2000sccm, adjusting the oxygen flow to 300-600sccm, and continuously maintaining for 60-120s to remove reaction residues in the three deposition processes and increase an oxide layer;
s11, four depositions: controlling the temperature of a diffusion furnace at 760-790 ℃, adjusting the flow of nitrogen to 700-1500sccm, adjusting the flow of phosphorus oxychloride to 500-1000sccm, adjusting the flow of oxygen to 500-1000sccm, and depositing a high-concentration P source on the surface of an oxide layer for 120-300s, so as to prepare for an SE process;
s12, introducing oxygen: the temperature of the diffusion furnace is controlled between 760 and 790 ℃, the flow rate of nitrogen is adjusted to 1000-3000sccm, the flow rate of oxygen is adjusted to 500-1000sccm, and the duration is between 90 and 150 seconds, so that reaction residues in four deposition processes are removed.
2. The SE-matched solar cell diffusion method of claim 1, wherein the process parameters of each step are:
s1, pre-deposition: the temperature is 780 ℃, the oxygen flow is 600sccm, the nitrogen flow is 1500sccm, and the duration is 150s;
s2, primary deposition: the deposition temperature is 785 ℃, the diffusion time is 210s, the nitrogen flow is 1200sccm, and the phosphorus oxychloride flow is 800sccm;
s3, primary oxidation: the temperature is 795 ℃, the duration is 60s, the nitrogen flow is 1000sccm, and the oxygen flow is 600sccm;
s4, secondary deposition: the deposition temperature is 795 ℃, the diffusion time is 180s, and the flow rate of phosphorus oxychloride is 800sccm;
s5, secondary oxidation: the temperature is 795 ℃, the duration is 90s, the nitrogen flow is 1500sccm, and the oxygen flow is 400sccm;
s6, propelling: the temperature is 850 ℃, the duration is 900s, and the nitrogen flow is 2000sccm;
s7, cooling: the temperature is 810 ℃, the duration is 1500s, and the nitrogen flow is 2500sccm;
s8, three times of oxidation: the temperature is 805 ℃, the duration is 90s, the nitrogen flow is 1200sccm, and the oxygen flow is 500sccm;
s9, three times of deposition: the deposition temperature is 800 ℃, the diffusion time is 240s, the nitrogen flow is 1200sccm, and the phosphorus oxychloride flow is 500sccm;
s10, four times of oxidation: the temperature is 790 ℃, the duration is 90s, the nitrogen flow is 1500sccm, and the oxygen flow is 400sccm;
s11, four depositions: the deposition temperature is 790 ℃, the diffusion time is 240s, the nitrogen flow is 1200sccm, and the phosphorus oxychloride flow is 800sccm;
s12, introducing oxygen: the temperature was 780℃and the duration was 120s, the nitrogen flow was 2500sccm and the oxygen flow was 800sccm.
3. The SE-matched solar cell diffusion process according to claim 1, characterized in that the pressure in the diffusion furnace is kept at 50-100 mbar.
4. The SE-matched solar cell diffusion process according to claim 2, characterized in that the pressure in the diffusion furnace is kept at 80mbar.
5. The SE-matched solar cell diffusion method according to claim 1, wherein placing the silicon substrate in the diffusion furnace in S1 comprises:
the silicon substrates are placed back to back in a quartz boat, and then the quartz boat is placed in a diffusion furnace.
6. The SE-matched solar cell diffusion process of claim 1, wherein the diffusion furnace is a low pressure tube furnace.
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| CN202111570976.9A CN114242840B (en) | 2021-12-21 | 2021-12-21 | SE-matched solar cell diffusion method |
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| CN202111570976.9A CN114242840B (en) | 2021-12-21 | 2021-12-21 | SE-matched solar cell diffusion method |
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| CN103199146A (en) * | 2012-01-04 | 2013-07-10 | 茂迪股份有限公司 | Solar cell manufacturing method |
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| CN112768346A (en) * | 2020-12-28 | 2021-05-07 | 横店集团东磁股份有限公司 | Diffusion process method of selective emitter solar cell |
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| WO2005041312A1 (en) * | 2003-10-24 | 2005-05-06 | Kyosemi Corporation | Light receiving or light emitting modular sheet and process for producing the same |
| KR20080110947A (en) * | 2005-12-02 | 2008-12-22 | 삼성전자주식회사 | Methods for cleaning a furnace |
| CN103199146A (en) * | 2012-01-04 | 2013-07-10 | 茂迪股份有限公司 | Solar cell manufacturing method |
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