CN114242568A - Low-stress medium composite film and manufacturing method thereof - Google Patents

Low-stress medium composite film and manufacturing method thereof Download PDF

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Publication number
CN114242568A
CN114242568A CN202111474059.0A CN202111474059A CN114242568A CN 114242568 A CN114242568 A CN 114242568A CN 202111474059 A CN202111474059 A CN 202111474059A CN 114242568 A CN114242568 A CN 114242568A
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film layer
sio
thin film
stress
layer
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周望
刘柏含
刘泽文
陈涛
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Simems Micro/nano System Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The invention relates to a low stress medium composite film and a manufacturing method thereof, comprising a monocrystalline silicon substrate, wherein SiO is distributed on the monocrystalline silicon substrate2Thermal oxidation of the thin film layer, SiO2SiO is distributed on the thermal oxidation film layer2Thin film layer of SiO2SiN is distributed on the thin film layerxA thin film layer. Therefore, the stress is adjusted to be close to zero stress by adjusting the deposition parameters of the film. The whole structure can form proper stress compensation and can convert SiO2Compressive stress and SiN of thin film layersxThe thin film layers are adjusted to be the same, thereby ensuring low stress of the composite film. The whole structure is simple, and the processing and the manufacturing are convenient.

Description

Low-stress medium composite film and manufacturing method thereof
Technical Field
The invention relates to a composite film and a manufacturing method thereof, in particular to a low-stress medium composite film and a manufacturing method thereof.
Background
With the rapid development of MEMS technology, silicon nitride and silicon oxide thin films are used as semiconductor thin films having excellent physicochemical properties, and are often used as a support layer, an insulating layer, and a surface passivation layer in MEMS. For example, micro-hotplate gas sensor chips and thermopile infrared sensor chips need to use a silicon nitride film as a supporting layer structure; RF MEMS contact switches often use silicon nitride or silicon oxide as the insulating layer for the upper and lower plates; most MEMS devices require a passivation layer of a composite layer of silicon nitride and silicon oxide deposited over a functional layer to protect the device structure. At present, the silicon nitride and silicon oxide deposition methods generally comprise plasma CVD, low-pressure CVD, reactive sputtering and the like, and the conventional methods generate excessive tensile stress or compressive stress on the film, so that cracking, wrinkling or peeling are caused. Stress problems directly affect the effectiveness of the membrane support, insulation or passivation and even result in poor reliability and mechanical failure of the entire MEMS device.
The problem of film stress is increasingly concerned in film basic theory and application, and the relationship between film growth and microstructure is established through explaining a stress mechanism, and the influence of film stress is controlled through a large number of experiments. However, it is very difficult to prepare a zero-stress film by adjusting the preparation processes of the silicon nitride film and the silicon oxide film in engineering
In view of the above-mentioned drawbacks, the present designer has made active research and innovation to create a low stress dielectric composite film and a method for manufacturing the same, so that the low stress dielectric composite film has industrial utility value.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a low stress dielectric composite film and a method for manufacturing the same.
The low stress medium composite film comprises a monocrystalline silicon substrate, wherein: SiO is distributed on the monocrystalline silicon substrate2A thermal oxide film layer of said SiO2SiO is distributed on the thermal oxidation film layer2Thin film layer of said SiO2SiN is distributed on the thin film layerxA thin film layer.
Further, in the low stress dielectric composite film, the thickness of the single crystal silicon substrate is 1000 to 3000nm, and the SiO is formed on the single crystal silicon substrate2The thickness of the thermal oxidation film layer is 600-1200 nm, and the SiO is2The thickness of the thin film layer is 200 to 600nm, and SiNxThe thickness of the thin film layer is 300 to 800 nm.
A method for preparing a low stress dielectric composite film comprisingThe method comprises the following steps: step one, a silicon wafer is used as a carrier, and a monocrystalline silicon substrate of the silicon wafer is cleaned. And step two, measuring the curvature of the silicon wafer by adopting a substrate curvature method to test the stress device. Step three, obtaining SiO by a silicon thermal oxidation process2And thermally oxidizing the thin film layer. Step four, in SiO2Deposition of SiO on the thermal oxide film layer2A thin film layer. Step five, in SiO2Deposition of SiN on thin film layersxA thin film layer. And sixthly, etching. And step seven, testing the stress device by adopting a substrate curvature method, and checking.
Further, in the preparation method of the low-stress medium composite film, in the first step, the monocrystalline silicon substrate is ultrasonically cleaned by acetone and isopropanol respectively, then is washed by deionized water, and finally, the surface water of the substrate is dried by blowing nitrogen or drying by a wafer drying machine.
Furthermore, in the third step, the thermal oxidation of silicon is carried out by an oxidation furnace system, the oxidation temperature is 900 ℃ to 1200 ℃, and SiO with the thickness of 600nm to 1200nm is generated2And thermally oxidizing the thin film layer.
Furthermore, in the fourth step, in the preparation method of the low stress dielectric composite film, in the SiO2Depositing a layer of SiO with the thickness of 200 to 600nm on the thermal oxidation film layer by using an LP CVD process at the temperature range of 750 to 850 DEG C2A thin film layer.
Furthermore, in the preparation method of the low stress dielectric composite film, in the fifth step, in the SiO step2Depositing a SiN layer with a thickness of 300-800 nm on the thin film layer by LP CVD at 750-850 deg.CxA thin film layer.
Furthermore, in the sixth step, the front surface of the silicon wafer forms a protective layer through photoresist, and the SiO on the back surface is etched by using a wet process2Thin film layer and SiNxA thin film layer.
Still further, in the above preparation method of the low stress medium composite film, in the seventh step, a step of removing the metal layer is adoptedDevice for testing stress by substrate curvature method and measuring grown SiO2Film and SiNxAnd (4) calculating the curvature of the silicon wafer behind the thin film layer by using a Stoney curvature formula, and judging the silicon wafer to be qualified when the stress is less than 50 MPa.
By the scheme, the invention at least has the following advantages:
1. the stress is adjusted to be close to zero stress by adjusting the deposition parameters of the film.
2. The whole structure can form proper stress compensation and can convert SiO2Compressive stress and SiN of thin film layersxThe thin film layers are adjusted to be the same, thereby ensuring low stress of the composite film.
3. The whole structure is simple, and the processing and the manufacturing are convenient.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a schematic structural diagram of a low stress dielectric composite film using three layers of dielectric.
FIG. 2 is a schematic structural diagram of a low stress dielectric composite film using a dual-layer dielectric.
FIG. 3 is a graph showing the variation of the stress of the composite film with the thickness of the film.
The meanings of the reference symbols in the drawings are as follows.
1 monocrystalline silicon substrate 2SiO2Thermal oxidation film layer
3SiO2Thin film layer 4SiNxFilm layer
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
The low stress dielectric composite film as shown in fig. 1 to 3 comprises a single crystal silicon substrate 1, which is distinguished in that: SiO is distributed on the monocrystalline silicon substrate 12And thermally oxidizing the thin film layer 2. At the same time, SiO2SiO is distributed on the thermal oxidation film layer 22A film layer 3. And, SiO2SiN is distributed on the thin film layer 3xA film layer 4. Specifically, the thickness of the single crystal silicon substrate 1 is 1000 to 3000nm, SiO2The thickness of the thermal oxidation film layer 2 is 600 to 1200nm, SiO2The thin film layer 3 has a thickness of 200 to 600nm and SiNxThe thickness of the thin film layer 4 is 300 to 800 nm. Therefore, the stress of the finished composite film is less than 50MPa, and the thickness of the finished composite film is more than 1 mu m and less than 2 mu m.
In order to better implement the invention, a preparation method of the low-stress medium composite film is provided, which comprises the following steps:
step one, a silicon wafer is used as a carrier, and a monocrystalline silicon substrate 1 is cleaned. Specifically, the monocrystalline silicon substrate 1 is firstly ultrasonically cleaned by acetone and isopropanol respectively, then is washed by deionized water, and finally is dried by nitrogen or the water on the surface of the substrate is dried by a wafer drying machine.
And step two, measuring the curvature of the silicon wafer by adopting a substrate curvature method to test the stress device. It is measured by conventional labels in the art that the return to step one, where curvature does not conform, is optimized.
Step three, obtaining SiO by a silicon thermal oxidation process2And thermally oxidizing the thin film layer 2. During the implementation, the thermal oxidation of silicon is carried out by an oxidation furnace system, the oxidation temperature is 900 ℃ to 1200 ℃, and SiO with the thickness of 600nm to 1200nm is generated2And thermally oxidizing the thin film layer 2.
Step four, in SiO2Deposition of SiO on the thermal oxide film layer 22A film layer 3. In particular, in SiO2Depositing a layer of SiO with the thickness of 200-600 nm on the thermal oxidation film layer 2 by using an LP CVD process at the temperature of 750-850 DEG C2 A film layer 3.
Step five, in SiO2Deposition of SiN on the thin film layer 3xA film layer 4. During the implementation, in SiO2Depositing a SiN layer with a thickness of 300-800 nm on the thin film layer 3 by LP CVD at 750-850 deg.Cx A film layer 4.
Step six, forming a protective layer on the front side of the silicon wafer through photoresist, and etching the back side by utilizing a wet processSiO of face2 Thin film layer 3 and SiNxA film layer 4.
And step seven, testing the stress device by adopting a substrate curvature method, and checking. Specifically, a stress device is tested by a substrate curvature method to measure the grown SiO2Film and SiNxAnd (4) calculating the curvature of the silicon wafer behind the thin film layer 4 by using a Stoney curvature formula, and judging the silicon wafer to be qualified when the stress is less than 50 MPa.
Example 1
A preparation method of a low-stress medium composite film comprises the following steps:
firstly, a monocrystalline silicon substrate 1 is respectively cleaned by acetone ultrasonic, then is washed by deionized water, and is dried by nitrogen. And then, measuring the curvature of the silicon wafer by adopting a substrate curvature method stress testing device. Then, using an oxidation furnace system to carry out a silicon thermal oxidation process, wherein the oxidation temperature is 900-1200 ℃, and SiO with the thickness of 1000nm is generated2A film layer 3. On the basis of the above processing, on SiO2Depositing a layer of SiN with the thickness of 500nm on the thin film layer 3 at the temperature range of 750-850 ℃ by using an LP CVD processxA film layer 4. After the completion, photoresist is adopted as a protective layer on the front side of the current silicon wafer, and a wet process is utilized to etch SiO on the back side2Film and SiNx A film layer 4. Finally, a stress testing device by adopting a substrate curvature method is adopted to measure the grown SiO2Film and SiNxAnd (4) calculating the curvature of the silicon wafer behind the thin film layer 4 by using a Stoney curvature formula. And when the stress is less than 50MPa, judging that the product is qualified. Thus, the final product is a four-layer construction.
Example 2
A preparation method of a low-stress medium composite film comprises the following steps:
firstly, monocrystalline silicon substrates 1 are respectively cleaned by isopropanol in an ultrasonic mode, then are washed by deionized water, and water on the surfaces of the substrates is dried by a wafer drying machine. And then, measuring the curvature of the silicon wafer by adopting a substrate curvature method stress testing device. Then, using an oxidation furnace system to carry out a silicon thermal oxidation process, wherein the oxidation temperature is 1000 ℃, and SiO with the thickness of 1000nm is generated2A film layer 3. Then, in SiO2Using LP CVD process on the thin film layer 3Depositing a layer of SiN with the thickness of 500nm at 800 DEG Cx A film layer 4.
Then, photoresist is adopted as a protective layer for the front side of the silicon wafer, and a wet process is utilized to etch SiO on the back side2Film and SiNx A film layer 4. Measuring grown SiO by using substrate curvature method to test stress device2Film and SiNxAnd (4) calculating the curvature of the silicon wafer behind the thin film layer 4 by using a Stoney curvature formula. And when the stress is less than 50MPa, judging that the product is qualified. Thus, the final finished product is of a three-layer structure, and a relatively simple structure is realized.
The invention has the following advantages by the aid of the character expression and the accompanying drawings:
1. the stress is adjusted to be close to zero stress by adjusting the deposition parameters of the film.
2. The whole structure can form proper stress compensation and can convert SiO2Compressive stress and SiN of thin film layersxThe thin film layers are adjusted to be the same, thereby ensuring low stress of the composite film.
3. The whole structure is simple, and the processing and the manufacturing are convenient.
Furthermore, the indication of the orientation or the positional relationship described in the present invention is based on the orientation or the positional relationship shown in the drawings, and is only for convenience of describing the present invention and simplifying the description, but does not indicate or imply that the indicated device or configuration must have a specific orientation or be operated in a specific orientation configuration, and thus, should not be construed as limiting the present invention.
The terms "primary" and "secondary" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "primary" or "secondary" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
Also, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "connected" and "disposed" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other or mutually interacted. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations. And it may be directly on the other component or indirectly on the other component. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, refer to an orientation or positional relationship illustrated in the drawings, which are used for convenience in describing the invention and to simplify the description, and do not indicate or imply that the device or component being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the invention.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims (9)

1. The low stress medium composite film comprises a monocrystalline silicon substrate and is characterized in that: the sheetSiO is distributed on the crystal silicon substrate2A thermal oxide film layer of said SiO2SiO is distributed on the thermal oxidation film layer2Thin film layer of said SiO2SiN is distributed on the thin film layerxA thin film layer.
2. The low stress dielectric composite film of claim 1, wherein: the thickness of the monocrystalline silicon substrate is 1000-3000 nm, and the SiO is2The thickness of the thermal oxidation film layer is 600-1200 nm, and the SiO is2The thickness of the thin film layer is 200 to 600nm, and SiNxThe thickness of the thin film layer is 300 to 800 nm.
3. The preparation method of the low-stress medium composite film is characterized by comprising the following steps of:
step one, cleaning a monocrystalline silicon substrate of a silicon wafer by taking the silicon wafer as a carrier;
secondly, measuring the curvature of the silicon wafer by adopting a substrate curvature method to test a stress device;
step three, obtaining SiO by a silicon thermal oxidation process2Thermally oxidizing the thin film layer;
step four, in SiO2Deposition of SiO on the thermal oxide film layer2A thin film layer;
step five, in SiO2Deposition of SiN on thin film layersxA thin film layer;
sixthly, etching is carried out;
and step seven, testing the stress device by adopting a substrate curvature method, and checking.
4. The method for preparing a low stress dielectric composite film according to claim 3, wherein: in the first step, the monocrystalline silicon substrate is ultrasonically cleaned by acetone and isopropanol respectively, then is washed by deionized water, and finally is dried by nitrogen or the water on the surface of the substrate is dried by a wafer drying machine.
5. The method for preparing a low stress dielectric composite film according to claim 3, wherein: in the third step, the mixture is passed through an oxidation furnaceThe system carries out silicon thermal oxidation at the temperature of 900-1200 ℃ to generate SiO with the thickness of 600-1200 nm2And thermally oxidizing the thin film layer.
6. The method for preparing a low stress dielectric composite film according to claim 3, wherein: in the fourth step, in SiO2Depositing a layer of SiO with the thickness of 200 to 600nm on the thermal oxidation film layer by using an LP CVD process at the temperature range of 750 to 850 DEG C2A thin film layer.
7. The method for preparing a low stress dielectric composite film according to claim 3, wherein: in the fifth step, in SiO2Depositing a SiN layer with a thickness of 300-800 nm on the thin film layer by LP CVD at 750-850 deg.CxA thin film layer.
8. The method for preparing a low stress dielectric composite film according to claim 3, wherein: in the sixth step, the front side of the silicon wafer forms a protective layer through photoresist, and the SiO on the back side is etched by utilizing a wet process2Thin film layer and SiNxA thin film layer.
9. The method for preparing a low stress dielectric composite film according to claim 3, wherein: in the seventh step, a stress device is tested by adopting a substrate curvature method to measure the grown SiO2Film and SiNxAnd (4) calculating the curvature of the silicon wafer behind the thin film layer by using a Stoney curvature formula, and judging the silicon wafer to be qualified when the stress is less than 50 MPa.
CN202111474059.0A 2021-12-03 2021-12-03 Low-stress medium composite film and manufacturing method thereof Pending CN114242568A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115377248A (en) * 2022-09-14 2022-11-22 武汉敏芯半导体股份有限公司 Method for manufacturing composite insulating film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115377248A (en) * 2022-09-14 2022-11-22 武汉敏芯半导体股份有限公司 Method for manufacturing composite insulating film

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