CN114234820B - Detection device for detecting thickness of semiconductor wafer - Google Patents
Detection device for detecting thickness of semiconductor wafer Download PDFInfo
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- CN114234820B CN114234820B CN202111490821.4A CN202111490821A CN114234820B CN 114234820 B CN114234820 B CN 114234820B CN 202111490821 A CN202111490821 A CN 202111490821A CN 114234820 B CN114234820 B CN 114234820B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000001514 detection method Methods 0.000 title claims abstract description 24
- 235000012431 wafers Nutrition 0.000 claims abstract description 46
- 238000005259 measurement Methods 0.000 claims abstract description 31
- 238000006073 displacement reaction Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 16
- 238000012360 testing method Methods 0.000 claims description 16
- 238000013102 re-test Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000001502 supplementing effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
- G01B5/02—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness
- G01B5/06—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness for measuring thickness
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The invention discloses a detecting device for detecting the thickness of a semiconductor wafer, which comprises: detecting a base; the adjusting telescopic frame is vertically fixed on one side of the upper end face of the detection base; the fixing frame is transversely fixed above the adjusting telescopic frame; the bearing substrate is horizontally and overhead fixed on the upper end face of the detection base and is used for horizontally containing semiconductor wafers; and the displacement measurement assembly is vertically arranged on the fixing frame and positioned in the middle of the bearing substrate, and can be used for measuring the thickness of the peripheral edge of the semiconductor wafer in vertical displacement.
Description
Technical Field
The invention belongs to the technical field of semiconductor wafer detection equipment, and particularly relates to a detection device for detecting the thickness of a semiconductor wafer.
Background
The semiconductor wafer is a semiconductor light-emitting component composed of semiconductor substances and is a main raw material of the LED; in the process of manufacturing semiconductor wafers, parameters such as brightness, voltage, wavelength, length, thickness, width and the like of the semiconductor wafers need to be detected. In the semiconductor wafer detection process, a thickness detection device is needed to detect the thickness of the center point of the semiconductor wafer, and the semiconductor thickness detection device can be divided into: the conventional semiconductor wafer thickness detection device adopts a manual centering mode to adjust the position of a semiconductor wafer in the use process, and repeatedly measures the semiconductor wafer after alignment for a plurality of times to reach an accurate value, so that the process is relatively complicated; particularly, in the reading, deviation is easy to generate, and accurate average value is difficult to reach. Accordingly, a detecting device for detecting the thickness of a semiconductor wafer is provided by a person skilled in the art to solve the above-mentioned problems.
Disclosure of Invention
In order to achieve the above purpose, the present invention provides the following technical solutions: a test apparatus for testing the thickness of a semiconductor wafer, comprising:
detecting a base;
The adjusting telescopic frame is vertically fixed on one side of the upper end face of the detection base;
the fixing frame is transversely fixed above the adjusting telescopic frame;
the bearing substrate is horizontally and overhead fixed on the upper end face of the detection base and is used for horizontally containing semiconductor wafers; and
The displacement measurement assembly is vertically arranged on the fixing frame and located in the middle of the bearing substrate, and can measure the thickness of the peripheral edge of the semiconductor wafer in vertical displacement.
Further, preferably, the displacement measurement assembly includes:
mounting a disc;
the telescopic guide rod is vertically fixed on the lower end face of the mounting disc, and is constructed into a two-section telescopic structure;
The electric telescopic rods are vertically and symmetrically arranged on the mounting disc and positioned at two sides of the telescopic guide rod; and
The multipoint measuring device is arranged below the telescopic guide rod and is used for carrying out transverse and longitudinal edge positioning measurement on the semiconductor wafer.
Further, preferably, the method further comprises:
The inner rotating disc can be embedded into the fixed frame in a relative rotating way, and the mounting disc piece is coaxially fixed below the inner rotating disc;
The driving motor is arranged on the fixing frame, and the output end of the driving motor is connected with the inner rotating disc for transmission through the meshing effect of the bevel gear.
Further, preferably, the multipoint measuring device includes:
A support main;
the positioning shaft sleeve is vertically fixed in the supporting main frame, and an inner supporting rod is coaxially arranged in the positioning shaft sleeve;
the positioning piece is fixed at the lower end of the inner supporting rod;
The telescopic shaft rod is vertically fixed on the supporting main frame, and a contact transverse plate is transversely fixed on the telescopic shaft rod;
the laser ray device is transversely fixed on the contact transverse plate, and the ray end of the laser ray device vertically irradiates on the inner supporting rod; and
The fine adjustment retest device is vertically arranged on the supporting main frame and is used for carrying out secondary measurement on the displacement telescopic length of the telescopic shaft rod.
Further, preferably, the method further comprises:
the inner adjusting screw piece is vertically arranged in the positioning shaft sleeve in a sliding manner through a threaded engagement effect, one end of the inner supporting piece is coaxially arranged on the inner adjusting screw piece in a rotating and adjusting manner, the positioning piece is enabled to be flush with the contact transverse plate in an initial state, and the inner supporting rod is further provided with a scale strip.
Further, preferably, a mounting recess is further formed below the contact transverse plate, and a standard block is detachably arranged in the mounting recess.
Further, preferably, the fine-tuning retest device includes:
the sealing tube is vertically fixed in the contact transverse plate;
The inner shaft plug is arranged in the sealing tube in a relatively sliding manner, and flowing liquid is quantitatively stored in the sealing tube;
the upper shaft tube is arranged above the sealing tube, and one end of the upper shaft tube is communicated with the sealing tube;
The sleeve pipe fitting is coaxially and closely arranged in the upper shaft tube, and a drainage liquid pipe is slidably arranged in the sleeve pipe fitting; and
The miniature telescopic rod is vertically and symmetrically arranged outside the upper shaft tube, one end of the miniature telescopic rod is fixedly provided with an outer shaft disc, and the outer shaft disc is connected with the drainage liquid tube through a transmission rod.
Further, preferably, the drainage liquid pipe is sealed and slid in the sleeve pipe piece through a sealing ring piece, a spherical drainage groove is formed in the inner wall of the drainage liquid pipe, and scale strips are arranged on the spherical drainage groove and the upper shaft pipe.
Further, preferably, an exhaust hole is further formed at the upper end of the upper shaft tube.
Further, preferably, a liquid replenishing pump is communicated with one side of the sealing tube.
Compared with the prior art, the invention has the beneficial effects that:
According to the invention, the upper end face of the detection base is provided with the bearing substrate, the bearing substrate can horizontally hold the semiconductor wafer, wherein a displacement measurement assembly is arranged above the bearing substrate, the positioning piece can be flush with the contact transverse plate mainly through preferential adjustment, then the contact transverse plate is abutted against the semiconductor wafer under the action of downward pressure by the electric telescopic rod, and when the positioning piece contacts the bearing substrate, the vertical telescopic quantity of the telescopic shaft rod is the thickness of the semiconductor wafer; the multi-point measuring device can synchronously measure the thickness of the periphery of the semiconductor wafer, record the thickness of each point after finishing single detection, and carry out transverse and longitudinal exchange under the rotation action by the inner rotating disc for secondary retest so as to achieve accurate numerical values; in addition, especially in the reading value, on one hand, the laser ray device can be matched with the scale strip on the inner support rod for reading; on the other hand, secondary reading can be performed through the fine adjustment retest device, so that an average value is obtained to achieve the effect of single-point accurate reading, and the detection precision is further improved; and the lower part of the contact transverse plate is also provided with a mounting concave position, and a standard block is detachably arranged in the mounting concave position, so that the measurement of the semiconductor wafer with smaller thickness is realized.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram of a displacement measurement assembly according to the present invention;
FIG. 3 is a schematic diagram of a multi-point measuring device according to the present invention;
FIG. 4 is a schematic diagram of a fine-tuning retest device according to the present invention;
In the figure: 1 detection base, 2 regulation expansion bracket, 3 mount, 4 displacement measurement module, 41 installation dish spare, 42 electric telescopic link, 43 flexible guide arm, 44 rotating disc, 45 driving motor, 5 bearing substrate, 6 multipoint measurement device, 61 support body frame, 62 location axle sleeve, 63 inner branch, 64 locating part, 65 flexible axostylus axostyle, 66 contact diaphragm, 67 laser ray device, 68 internal adjustment screw spare, 7 fine adjustment retest device, 71 sealed tube, 72 interior axle plug, 73 upper shaft tube, 74 cover pipe fittings, 75 sealing ring spare, 76 miniature telescopic link, 77 fluid infusion pump.
Detailed Description
Referring to fig. 1, in an embodiment of the present invention, a detecting apparatus for detecting a thickness of a semiconductor wafer includes:
A detection base 1;
The adjusting telescopic frame 2 is vertically fixed on one side of the upper end face of the detection base 1;
the fixing frame 3 is transversely fixed above the adjusting telescopic frame;
the bearing substrate 5 is horizontally and overhead fixed on the upper end face of the detection base 1, and the bearing substrate 5 is used for horizontally containing semiconductor wafers; and
The displacement measurement assembly 4 is vertically arranged on the fixing frame 3 and positioned in the middle of the bearing substrate 5, the displacement measurement assembly 4 can measure the thickness of the peripheral edge of the semiconductor wafer in vertical displacement, especially in measurement, the displacement measurement assembly can preferentially take out the thickness of the peripheral edge of the semiconductor wafer, and after initial measurement is completed, secondary retest of transverse and longitudinal exchange can be carried out, so that the process is simple, and the measurement accuracy is high.
In this embodiment, the displacement measuring assembly 4 includes:
mounting a disc 41;
a telescopic guide rod 43 vertically fixed to a lower end surface of the mounting plate 41, the telescopic guide rod 43 being constructed in a two-stage telescopic structure;
the electric telescopic rods 42 are vertically and symmetrically arranged on the mounting disc 41 and positioned at two sides of the telescopic guide rods 43; and
The multipoint measuring device 6 is arranged below the telescopic guide rod 43 and is used for performing transverse and longitudinal edge positioning measurement on the semiconductor wafer.
As a preferred embodiment, further comprising:
an inner rotating disc 44 which is rotatably embedded in the fixed frame 3, and the mounting disc 41 is coaxially fixed below the inner rotating disc 44;
The driving motor 45 is installed on the fixing frame 3, the output end of the driving motor 45 is connected with the inner rotating disc 44 for transmission through the meshing effect of a bevel gear, especially in secondary retest, any point can be taken under the deflection effect, a universal measured value can be conveniently obtained, the inclination of the surface of a semiconductor wafer can be calculated, and the functionality is strong.
In this embodiment, the multipoint measuring device 6 includes:
a support main 61;
The positioning shaft sleeve 62 is vertically fixed in the supporting main frame 61, and an inner supporting rod 63 is coaxially arranged in the positioning shaft sleeve 62;
A positioning member 64 fixed to the lower end of the inner strut 63;
A telescopic shaft rod 65 vertically fixed on the supporting main frame 61, wherein a contact transverse plate 66 is transversely fixed on the telescopic shaft rod 65;
A laser beam device 67 transversely fixed to the contact cross plate 66, wherein a beam end of the laser beam device 67 is vertically irradiated on the inner strut 63; and
The fine-tuning retest device 7 is vertically arranged on the supporting main frame 61 and is used for carrying out secondary measurement on the displacement telescopic length of the telescopic shaft rod 65, namely, in single measurement, on one hand, the scale bars on the inner support rod can be irradiated by the laser ray device in a matching way to carry out reading; on the other hand, the secondary reading can be carried out through the fine adjustment retest device, so that the average value is obtained, and the effect of single-point accurate reading is achieved.
In this embodiment, the method further includes:
The internal adjusting screw piece 68 is vertically and slidably arranged in the positioning shaft sleeve 62 through a threaded engagement effect, one end of the internal support piece 63 is coaxially and rotatably arranged on the internal adjusting screw piece 68, the positioning piece 64 is flush with the contact transverse plate 66 in an initial state due to a rotary adjusting effect of the internal adjusting screw piece 68, preliminary calibration is facilitated, and the internal support piece 63 is further provided with a scale bar.
In this embodiment, a mounting recess is further formed below the contact transverse plate 66, and a standard block is detachably disposed in the mounting recess, especially for a semiconductor wafer with relatively small thickness and difficult numerical reading, and the standard block is added to perform visual and accurate measurement.
As a preferred embodiment, the fine-tuning retest device 7 includes:
a seal tube 71 vertically fixed in the contact cross plate 66;
An inner shaft plug 72 which is relatively slidably disposed in the seal tube 71, wherein a flow liquid is quantitatively stored in the seal tube 71;
an upper shaft tube 73 disposed above the sealing tube 71, one end of the upper shaft tube 73 being communicated with the sealing tube 71;
a sleeve member 74 coaxially fitted in the upper shaft tube 73, wherein a drainage tube 8 is slidably disposed in the sleeve member 74; and
The miniature telescopic rod 76 is vertically and symmetrically arranged outside the upper shaft tube 73, one end of the miniature telescopic rod 76 is fixed with an outer shaft disc, and the outer shaft disc is connected with the drainage tube 8 through a transmission rod.
In this embodiment, the drainage tube 8 is sealed to slide in the sleeve member 74 through the sealing ring member 75, and the spherical drainage groove is provided in the inner wall of the drainage tube 8, the spherical drainage groove and the upper shaft tube 73 are all provided with scale bars, wherein the vertical intervals of the scale bars at the spherical drainage groove are reduced and arranged stepwise from the middle to the two sides, and in the thickness detection of the semiconductor wafer, when the flowing liquid is discharged to the spherical drainage groove, especially the liquid level far away from the center of the circle in the spherical drainage groove, the surface reading is more accurate, therefore, the drainage tube can be driven to vertically slide by the telescopic action of the miniature telescopic rod after the measurement is completed, so that the flowing liquid is positioned at the upper liquid site of the spherical drainage groove, and the accurate value is conveniently read.
In this embodiment, the upper end of the upper shaft tube 73 is further provided with an exhaust hole.
In this embodiment, a fluid supplementing pump 77 is connected to one side of the sealing tube 71.
Specifically, in the thickness detection of the semiconductor wafer, the machine correction is preferentially carried out, the electric telescopic rod drives the contact transverse plate to slide downwards and attach to the bearing substrate, at the moment, the internal adjusting screw part enables the positioning part to synchronously lean against the bearing substrate under the rotation action, the bearing substrate holds the semiconductor wafer, the electric telescopic rod vertically slides and stretches out, when the positioning part contacts the bearing substrate, the vertical telescopic quantity of the telescopic shaft is the thickness of the semiconductor wafer, the numerical value of each point is recorded, the average value is taken, then the inner rotating disc carries out transverse and longitudinal exchange under the rotation action, secondary retest is carried out, and the numerical values of initial measurement and retest are compared or the median value is taken, so that the accurate measurement of the thickness of the semiconductor wafer is realized.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (7)
1. A test apparatus for testing the thickness of a semiconductor wafer, characterized by: it comprises the following steps:
A detection base (1);
The adjusting telescopic frame (2) is vertically fixed on one side of the upper end face of the detection base (1);
the fixing frame (3) is transversely fixed above the adjusting expansion bracket;
the bearing substrate (5) is horizontally and overhead fixed on the upper end face of the detection base (1), and the bearing substrate (5) is used for horizontally containing semiconductor wafers; and
The displacement measurement assembly (4) is vertically arranged on the fixing frame (3) and positioned in the middle of the bearing substrate (5), and the displacement measurement assembly (4) can measure the thickness of the peripheral edge of the semiconductor wafer in vertical displacement; the displacement measurement assembly (4) comprises:
Mounting a disc (41);
the telescopic guide rod (43) is vertically fixed on the lower end surface of the mounting disc (41), and the telescopic guide rod (43) is constructed into a two-section telescopic structure;
The electric telescopic rods (42) are vertically and symmetrically arranged on the mounting disc (41) and positioned at two sides of the telescopic guide rod (43); and
The multipoint measuring device (6) is arranged below the telescopic guide rod (43) and is used for carrying out transverse and longitudinal edge positioning measurement on the semiconductor wafer;
the multipoint measurement device (6) comprises:
a support main (61);
The positioning shaft sleeve (62) is vertically fixed in the supporting main frame (61), and an inner supporting rod (63) is coaxially arranged in the positioning shaft sleeve (62);
The positioning piece (64) is fixed at the lower end of the inner supporting rod (63);
The telescopic shaft rod (65) is vertically fixed on the supporting main frame (61), and a contact transverse plate (66) is transversely fixed on the telescopic shaft rod (65);
A laser ray device (67) transversely fixed on the contact transverse plate (66), wherein the ray end of the laser ray device (67) vertically irradiates on the inner support rod (63); and
The fine-tuning retest device (7) is vertically arranged on the supporting main frame (61) and is used for carrying out secondary measurement on the displacement telescopic length of the telescopic shaft rod (65);
The fine-tuning retest device (7) comprises:
a seal tube (71) vertically fixed in the contact cross plate (66);
An inner shaft plug (72) which is arranged in the sealing tube (71) in a relatively sliding manner, wherein flowing liquid is quantitatively stored in the sealing tube (71);
An upper shaft tube (73) arranged above the sealing tube (71), wherein one end of the upper shaft tube (73) is communicated with the sealing tube (71);
a sleeve member (74) coaxially attached to the upper shaft tube (73), wherein a drainage tube (8) is slidably arranged in the sleeve member (74); and
The miniature telescopic rod (76) is vertically and symmetrically arranged outside the upper shaft tube (73), one end of the miniature telescopic rod (76) is fixedly provided with an outer shaft disc, and the outer shaft disc is connected with the drainage liquid tube (8) through a transmission rod.
2. A test apparatus for testing semiconductor wafer thickness as defined in claim 1, wherein: the displacement measurement assembly (4) further comprises:
The inner rotating disc (44) can be embedded into the fixed frame (3) in a relative rotating way, and the mounting disc piece (41) is coaxially fixed below the inner rotating disc (44);
The driving motor (45) is arranged on the fixing frame (3), and the output end of the driving motor (45) is connected with the inner rotating disc (44) for transmission through the meshing effect of the bevel gear.
3. A test apparatus for testing semiconductor wafer thickness as defined in claim 1, wherein: the multipoint measurement device (6) further comprises:
The inner adjusting screw piece (68) is vertically arranged in the positioning shaft sleeve (62) in a sliding manner through a threaded engagement effect, one end of the inner supporting rod (63) is coaxially arranged on the inner adjusting screw piece (68) in a rotating and adjusting manner through the inner adjusting screw piece (68), the positioning piece (64) is enabled to be flush with the contact transverse plate (66) in an initial state, and a scale bar is further arranged on the inner supporting rod (63).
4. A test apparatus for testing semiconductor wafer thickness as defined in claim 1, wherein: the lower part of the contact transverse plate (66) is also provided with a mounting concave position, and a standard block is detachably arranged in the mounting concave position.
5. A test apparatus for testing semiconductor wafer thickness as defined in claim 1, wherein: the drainage liquid pipe (8) is hermetically and slidably arranged in the sleeve member (74) through the sealing ring member (75), a spherical drainage groove is formed in the inner wall of the drainage liquid pipe (8), and scale strips are arranged on the spherical drainage groove and the upper shaft tube (73).
6. A test apparatus for testing semiconductor wafer thickness as defined in claim 1, wherein: the upper end of the upper shaft tube (73) is also provided with an exhaust hole.
7. A test apparatus for testing semiconductor wafer thickness as defined in claim 1, wherein: one side of the sealing tube (71) is communicated with a liquid supplementing pump (77).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111490821.4A CN114234820B (en) | 2021-12-08 | 2021-12-08 | Detection device for detecting thickness of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111490821.4A CN114234820B (en) | 2021-12-08 | 2021-12-08 | Detection device for detecting thickness of semiconductor wafer |
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| Publication Number | Publication Date |
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| CN114234820A CN114234820A (en) | 2022-03-25 |
| CN114234820B true CN114234820B (en) | 2024-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111490821.4A Active CN114234820B (en) | 2021-12-08 | 2021-12-08 | Detection device for detecting thickness of semiconductor wafer |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115831793B (en) * | 2022-12-02 | 2023-09-01 | 江苏希太芯科技有限公司 | Mass metering device in semiconductor manufacturing process |
| CN116422979B (en) * | 2023-06-13 | 2023-08-15 | 山西宝龙达锻造股份有限公司 | Flange end face machining device and machining method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017112316A (en) * | 2015-12-18 | 2017-06-22 | 株式会社Sumco | Thickness distribution measurement system of semiconductor wafer and semiconductor wafer polishing system, thickness distribution measurement method of semiconductor wafer and thickness allowance distribution measurement method, and polishing method of semiconductor wafer |
| CN106989679A (en) * | 2017-02-23 | 2017-07-28 | 北京交通大学 | Contactless semiconductor wafer measuring thickness device |
| CN207816146U (en) * | 2017-09-30 | 2018-09-04 | 青岛嘉星晶电科技股份有限公司 | Wafer thickness measuring device |
| CN113596280A (en) * | 2021-08-16 | 2021-11-02 | 重庆市计量质量检测研究院 | Optical scanner error adjustment tool |
| CN214951147U (en) * | 2021-06-29 | 2021-11-30 | 厦门陆远科技有限公司 | Wafer size detection instrument |
-
2021
- 2021-12-08 CN CN202111490821.4A patent/CN114234820B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017112316A (en) * | 2015-12-18 | 2017-06-22 | 株式会社Sumco | Thickness distribution measurement system of semiconductor wafer and semiconductor wafer polishing system, thickness distribution measurement method of semiconductor wafer and thickness allowance distribution measurement method, and polishing method of semiconductor wafer |
| CN106989679A (en) * | 2017-02-23 | 2017-07-28 | 北京交通大学 | Contactless semiconductor wafer measuring thickness device |
| CN207816146U (en) * | 2017-09-30 | 2018-09-04 | 青岛嘉星晶电科技股份有限公司 | Wafer thickness measuring device |
| CN214951147U (en) * | 2021-06-29 | 2021-11-30 | 厦门陆远科技有限公司 | Wafer size detection instrument |
| CN113596280A (en) * | 2021-08-16 | 2021-11-02 | 重庆市计量质量检测研究院 | Optical scanner error adjustment tool |
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