CN114232088A

CN114232088A - Large-capacity CVD equipment equipped with gas injection module unit

Info

Publication number: CN114232088A
Application number: CN202111279413.4A
Authority: CN
Inventors: 金甲锡; 朴起圣; 金太周; 金种化; 金圣允; 钟婉榕
Original assignee: Shanghai Sanpan Semiconductor Equipment Co ltd
Current assignee: Shanghai Sanpan Semiconductor Equipment Co ltd
Priority date: 2021-11-01
Filing date: 2021-11-01
Publication date: 2022-03-25
Anticipated expiration: 2041-11-01
Also published as: CN114232088B

Abstract

The invention relates to a large-capacity chemical vapor deposition device loaded with gas injection module units, which is composed of more than one gas injection module units and more than one gas exhaust part, wherein equipment is arranged in a CVD reaction cavity, more than one gas injection module unit comprises more than 2 gas injection parts, and the use and replacement period of a gas injection part is adjusted by controlling the opening of a rotating plate or a cover of the gas injection module unit, so that a large-capacity CVD device which is provided with the gas injection module units and is characterized by realizing continuous 300 hours, not interrupting a growth process and not replacing the gas injection parts and manufacturing uniform polycrystalline silicon carbide thick films and formed bodies with the thickness of more than 10mm is manufactured.

Description

Large-capacity CVD equipment equipped with gas injection module unit

Technical Field

The invention relates to a large-capacity chemical vapor deposition device, in particular to an assembled gas injection module unit and a large-capacity CVD device.

Background

Generally, silicon carbide is a hard eutectic bonding substance, exists in the form of high purity single crystal or polycrystalline powder at high temperature and low pressure, is manufactured as a bulk-shaped component by various sintering techniques, and particularly, the sublimation of high purity powder has led to the development of silicon carbide wafer fabrication techniques and the development of the silicon carbide semiconductor industry. In addition, recently, with the development of ultra-high integration and ultra-fine technology of semiconductor technology, the characteristics of process equipment and components used in semiconductor manufacturing processes have been improved, and the demand for polycrystalline silicon carbide as accessories for semiconductor process equipment has been increasing in order to improve yield and reduce manufacturing cost.

In order to form a film of uniform thickness by a high-capacity CVD method, it is important to optimize various process conditions such as the kind of reaction gas, the gas mixing ratio, the gas mixing balance degree, the gas injection mode into the chamber, the deposition temperature, the temperature balance degree or temperature gradient in the chamber, the deposition pressure, the reaction chamber structure, the flow rate of the reaction gas, the flow rate distribution during the loading into the reaction chamber, the deposition rate, the reaction chamber structure, the exhaust of the reaction gas and reaction by-products, and the loading mode of the equipment in the chamber, wherein the raw material equipment in the CVD reaction chamber is uniformly injected and dispersed, and the uniform distribution on all the equipment loaded in the high-capacity CVD reaction chamber. In particular, the raw material gas needs to be uniformly supplied to a device having various shapes and sizes loaded in a large-capacity CVD reaction chamber, and a laminar flow (LaminarFlow) or a turbulent flow (TurbulentFlow) or a mixed flow of the laminar flow and the turbulent flow needs to be adjusted, and the unreacted raw material gas and the reaction by-product gas are discharged in time through the exhaust port.

In order to ensure uniform deposition, a large number of gas supply nozzles are arranged in a large-capacity CVD reaction chamber, and a plurality of methods (US 5,474,613, US 6,299,683) for injecting raw material gas and adjusting the flow of the raw material gas are uniformly supplied to a device from the upper part to the lower part, from the side to the side, from the side to the lower part, or from the lower part to the upper part and then to the lower part of the reaction chamber, or a method (US 5,354,580) for forming a radial silicon carbide body by vertically flowing the reaction gas by using a plurality of independent triangular internal chamber structures in a large-capacity CVD reaction chamber, or a manufacturing apparatus (Korean patent 10-1631796) for horizontally injecting and discharging the reaction gas to vertically stack the reaction gas over the entire surface of a sacrificial material in a vertical stack in the flow direction of the reaction gas to form a large amount of silicon carbide in a large-capacity CVD reaction chamber, 10-2056705, 10-2297741), and the like. Generally, during the deposition of a large-capacity CVD thick film, a material or a stacked material is rotated to deposit a relatively uniform polycrystalline silicon carbide thick film, but in order to mass-produce a large-capacity CVD apparatus, several tens to several hundreds of materials are loaded in a reaction chamber, a high-temperature CVD process is performed, and it is difficult to uniformly supply a reaction gas to the materials having various shapes and sizes.

During the high temperature CVD process, the outlet part of the gas injection nozzle mainly made of high purity graphite is reacted and deposited by the injected reaction gas along with high temperature in the CVD cavity, so that the CVD cavity is gradually blocked, and the uniform gas injection and the uniform thick film deposition or growth are difficult to be carried out in a large-capacity CVD growth furnace. In order to solve the above problems, it is common to switch a gas supply nozzle additionally installed in a CVD growth furnace chamber to be used to perform chemical vapor deposition for a long time, but the same situation occurs, and the problem of gradual clogging of the gas injection nozzle is repeated, so that it is difficult to perform CVD deposition or growth continuously for 300 hours or more. If the final thickness of the deposited product is more than 5-10mm, the process will be interruptedAnd (3) a CVD growth process, wherein the growth furnace is maintained, and the CVD deposition or growth process is carried out again after a brand-new gas injection nozzle is replaced. In addition, the gas injection nozzle to be used is slower in reaction than the gas injection nozzle supplying the process gas, but exposed to the inside of the high-temperature large-capacity CVD growth furnace, and the outlet portion of the gas supply nozzle deposits CVDS_iC, will also gradually become plugged, and after the start of the changeover, the process gas will start to flow in and will deposit the outlet portion faster and be plugged. Finally, in order to deposit or grow uniform high-quality polycrystalline silicon carbide having a thickness of 10mm or more, the chemical vapor deposition process needs to be suspended, and the growth process needs to be performed again after a brand-new gas supply nozzle is replaced. Polycrystalline silicon carbide bodies produced by this process have discontinuous surfaces on their surfaces and inside, and particularly when used in components in semiconductor dry etching process equipment, the discontinuous interfaces produce particulate and contamination sources requiring special product and quality management. Therefore, it is necessary to develop a gas injection apparatus for a long-time CVD deposition or growth process of 300 hours or more in order to manufacture various three-dimensional molded bodies having a thickness of 10mm or more.

Disclosure of Invention

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a gas injection module unit comprising a plurality of gas injection units for uniformly supplying mixed supply gases such as Methyltrichlorosilane (MTS), hydrogen, nitrogen, argon, etc. for a long period of time of 300 hours or more, and a large-capacity CVD apparatus equipped with the same, which can uniformly supply and form controllable and optimized reaction gases, flows, and distributions in the entire space of a CVD reaction chamber, and can produce a polycrystalline silicon carbide body having a complicated three-dimensional shape with a uniform thickness, and which can continuously perform a high-temperature CVD growth process for 300 hours or more, and which can be equipped with the gas injection module unit, and a large-capacity CVD apparatus equipped with the same.

In order to achieve the above object, the present invention provides a high-capacity CVD apparatus equipped with a gas supply module unit, which is a gas supply module unit composed of a plurality of gas injection parts and used for uniformly supplying a process gas mixture for a long time, wherein the gas supply module unit is a high-temperature high-capacity CVD growth furnace for depositing a uniform polycrystalline silicon carbide thick film and is a high-capacity CVD apparatus capable of continuously growing for 300 hours or more, and the gas supply module unit is a rotary lid composed of two or more gas injection parts and used for adjusting the opening and closing of each gas injection part; and a control part for controlling the rotary cover manually or automatically to determine the injection of the mixed process gas, wherein more than one gas injection part passes through the opening part of the rotary cover, the gas injection part is in an open state in the large-capacity CVD growth furnace, and the rear part of the blocked part of the rotary cover can prevent or reduce the exposure of the gas injection part in the temperature and high-temperature process gas of the CVD growth process, namely the blocking problem of the outlet part of the gas injection part can be reduced and prevented.

The gas supply module unit can be arranged on the side surface or the top of the large-capacity CVD cavity, and the gas exhaust part or the bottom gas exhaust part at the opposite position of the gas supply module unit forms optimized balanced gas flow and distribution, so that the polycrystalline silicon carbide thick film or body with uniform thickness can be manufactured.

In addition, compared with the method that a plurality of gas injection parts are assembled to be used on a large-capacity CVD process cavity, the method does not need to change the position of the optimal gas injection part, maintains nearly the same position and can carry out the high-temperature CVD deposition or growth process for a long time, particularly, the method does not need to additionally assemble the gas injection part for carrying out the high-temperature CVD deposition or growth for a long time, provides a more efficient mode for the manufacturing and production operation of the CVD reaction cavity, does not need to pause and replace the gas injection part in the CVD growth process, can continuously and evenly provide process gas, flow and distribution or regulation for more than 300 hours, and can finally manufacture the polycrystalline silicon carbide thick film or body with the uniform thickness of more than 10 mm.

In addition, the gas supply module unit device of the present invention can be used to manufacture not only polycrystalline silicon carbide, boron carbide (B4C), tantalum carbide (TaC), tungsten carbide (WC), and other various materials as a thick film or a body by a high temperature CVD apparatus.

The present invention, which is composed as described above, provides an effect of fabricating polycrystalline silicon carbide thick films or bodies of uniform thickness on the surfaces of various shapes and sizes of devices by assembling a large-capacity CVD growth apparatus having a gas supply module unit including two or more gas injection parts, initially maintaining optimum gas injection conditions using the minimum gas injection module unit, performing the process in the large-capacity CVD apparatus for a long period of time of 300 hours continuously without replacement of the gas injection parts or replacement of CVD thick films or suspension of the growth process, depositing or growing polycrystalline silicon carbide of 10mm or more in thickness, and controllably opening and closing the gas supply module unit or forming of optimum reaction gas flow and distribution in the large-capacity CVD reaction chamber.

Drawings

FIG. 1(a) is a schematic diagram showing the outline of a CVD reaction chamber equipped with a plurality of supply gas module units according to an embodiment of the present invention;

FIG. 1(b) is a partial cross-sectional view of FIG. 1 (a);

FIG. 1(c) is a schematic diagram of a plurality of gas supply module units according to an embodiment of the present invention;

FIG. 1(d) is a schematic diagram showing a second outline of a plurality of gas supply module units provided in the embodiment of the present invention;

FIG. 1(e) is a schematic cross-sectional view of several gas supply module units provided in the embodiment of the present invention;

FIG. 1(f) is a schematic diagram showing a cross-sectional view of a gas injection module unit assembled in a CVD reaction chamber according to an embodiment of the present invention;

FIG. 2(a) is a schematic diagram of a gas supply module unit provided in an embodiment of the invention mounted on a CVD reaction chamber;

FIG. 2(b) is a partial cross-sectional view of FIG. 2 (a);

FIGS. 3(a) to (f) are schematic diagrams illustrating the gas injection unit of the gas supply module unit according to the embodiment of the present invention;

FIGS. 4(a) to (d) are schematic diagrams showing various shapes of the graphite gas nozzle outlet of the gas injection part of the gas supply module unit provided in the embodiment of the present invention;

description of the symbols:

100: a CVD reaction chamber; 110: a stainless steel dual cooling cavity; 120: a graphite adiabatic refractory cavity; 200: a gas injection module unit; 210: a gas injection part; 211: a rotating cover; 212: a graphite gas nozzle; 213: a stainless steel gas nozzle; 214: a rotating shaft; 215: a circular seal ring; 216: a bearing; 217: a motor; 300: a gas discharge part.

Detailed Description

The invention will now be described in further detail with reference to the figures and examples.

The actual form of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. The shapes, sizes, and the like of the drawings may be expanded for clarity of description, and elements denoted by the same reference numerals in the drawings are the same elements.

Also, the use of "connected" to one or more other components throughout the specification is not intended to be limited to "directly connected" but rather includes "electrically connected" to other components that are spaced apart from one another. In addition, when a component is "included" or "provided" in a certain part, other components are not excluded but more other components are included or provided in addition to the components having no special objection.

The terms "first", "second", and the like are used for clarity of description only, and are not intended to limit the scope of the present invention. If a first element is referred to as a second element, a similar second element may be referred to as the first element.

Fig. 1(a) to (b) show a CVD reaction chamber 100 equipped with a gas injection unit, an outline and a cross section of a gas injection module unit 200, and a cross section of the gas injection module unit equipped on the CVD reaction chamber 100 according to an embodiment of the present invention. The large-capacity CVD equipment provided in this embodiment is a large number of devices with various shapes and sizes that can be installed in the CVD reaction chamber 100, and an electric control part that can control the equipment, especially a large-capacity CVD equipment for deposition or growth of a polycrystalline silicon carbide thick film, wherein a plurality of gas injection parts 210 and a plurality of gas exhaust parts 300 are installed on the side surface or the top part of the CVD reaction chamber 100, and the continuous 300-hour growth process is realized by the control of the electric control part.

Fig. 1(a) - (b) show the side of the CVD reaction chamber 100 equipped with the gas injection module units, and a plurality of gas injection module units 200 are respectively disposed at three equal parts of the side of the CVD reaction chamber 100 in the vertical direction, but the invention is not limited thereto, and the gas injection module units can be assembled at the side and the top or only at the top. In addition, the gas exhaust 300 is generally installed at the bottom of the CVD reaction chamber 100, but not limited thereto, and the gas exhaust 300 may be installed at the side or the top. In the following, a large-capacity CVD apparatus equipped with a gas injection module unit is described for producing thick silicon carbide bodies of various shapes and sizes by deposition or growth of a polycrystalline silicon carbide thick film according to the present embodiment, but not limited thereto, deposition and growth of various substances such as boron carbide (B4C), tantalum carbide (TaC), and the like are also applicable.

Fig. 1(c) to 1(e) are external and sectional views of a gas injection module unit 200 composed of a plurality of gas injection parts 210. The gas injection module unit 200 includes: the rotary cover 211 and the two or more gas injection parts 210 are generally configured such that the gas injection part 210 is composed of a graphite gas nozzle 212, a graphite gas nozzle box, and a stainless steel gas nozzle 213, and the stainless steel gas nozzle 213 includes a cooling function when exposed to high temperatures.

As shown in fig. 1(b) to 1(e), the gas injection unit 210 of the gas injection module unit 200 is an example that does not include a graphite gas nozzle box. The rotary cover 211 has a function of protecting the graphite gas nozzle 212, and may be provided with a gas injection part 210 including a gas nozzle box portion, although the gas nozzle box is not included. The diameter of the spin cover 211 is the same as that of the graphite gas nozzle 212, or the diameter of the spin cover 211 is larger than that of the graphite gas nozzle 212, the spin cover 211 includes an opening portion, the opening of the spin cover 211 has a tapered structure in which the diameter gradually decreases along the inner direction of the CVD reaction chamber 100, and the opening may be formed in the form of a circular graphite disk, or may be formed in the form of a cap after the circumferential portion of the graphite disk is vertically expanded. The spin cover 211 is provided with an opening, the gas injection unit 210 is rotated and then put into use in a growth process of CVD equipment through the opening, and the other gas injection units 210 are put into use after being rotated on the back surface of the spin cover 211. The process gas is supplied through more than one gas injection part 210, and the gas nozzles of other gas injection parts 210 are arranged at the cutting part of the rotary cover 211; before the outlet of the gas injection part 210 is reduced or blocked by 30-50% or more in use, the rotary cover 211 is rotated and the gas injection part 210 is replaced to allow a formed body of 10mm or more to be subjected to a CVD growth process for a long period of time.

As shown in fig. 1(b) - (f), the rotating shaft 214 passes through the center of the gas injection parts 210 and is vertically connected to the rotating cover 211, and the rotating shaft 214 is driven to rotate manually or by a motor 217. In the present embodiment, the rotary shaft 214 is fixed by a circular seal ring 215 and a bearing 216.

Specifically, all of the devices and components comprising the stack of devices within CVD reactor 100 are exposed to the mixed process gases by a high temperature CVD process, and thus polycrystalline silicon carbide grows on all of the devices. Particularly, the outlet portion of the graphite gas nozzle 212 of the gas injection unit 210 for injecting the mixed process gas is exposed to the process of injecting the mixed process gas into the CVD reaction chamber 100, so that the outlet portion of the graphite gas nozzle 212 is deposited rapidly, and the diameter of the outlet portion is reduced to gradually change the supply amount of the mixed process gas.

In this case, although the high-temperature CVD process is continuously performed for a long time by replacing the spare gas injection part 210 without injecting the mixed process gas in the large-capacity CVD growth equipment using the gas injection part 210, the outlet portion of the gas injection part 210 is gradually closed again, it is difficult to uniformly inject the mixed process gas into the CVD reaction chamber 100, the growth process is finally stopped, and the growth process is continuously performed to manufacture a desired thickness of the polycrystalline silicon carbide body after replacing the new gas injection part 210.

In the embodiment of the present invention, the gas injection module unit 200 including two or more gas injection parts 210 is used, the rotating cover 211 is controlled, the gas injection part 210 with the reduced diameter of the outlet portion of the graphite gas nozzle 212 is converted into the gas injection part 210 to be used, and the growth process is continued for 300 hours or more, and the position of the gas injection part 210 is almost unchanged, so that the initial optimal gas injection condition can be continuously maintained.

FIG. 1(f) is a cross-sectional view of a gas injection module unit 200 assembled in a CVD reaction chamber 100 according to an embodiment of the present invention. The stainless steel double cooling chamber 110 penetrating the outer wall of the CVD reaction chamber 100 is assembled by penetrating the graphite adiabatic refractory chamber 120, and is formed in a structure of completely blocking high temperature and mixed process gas.

FIGS. 2(a) to (b) are sectional views of the CVD reaction chamber 100 in which a plurality of gas injection module units 200 and gas exhaust units 300 are mounted on the side surface of the CVD reaction chamber 100 according to the embodiment of the present invention. The apparatus mounted inside the CVD reaction chamber 100 can form a plurality of combinations of the gas injection module unit 200 and the gas exhaust part 300 according to the size and shape, adjust the optimum process gas supply, flow and distribution, and finally manufacture and obtain a polycrystalline silicon carbide thick film or body with uniform thickness.

Fig. 3(a) to (f) are schematic diagrams illustrating a method for forming the gas injection unit 210 of the gas injection module unit 200 according to the embodiment of the present invention. The gas injection module unit 200 is composed of 2 to 4 gas injection parts 210, the number of the gas injection parts 210 to be used is determined according to the CVD growth process time of 300 hours or more or the thickness of the final polycrystalline silicon carbide body, and the gas injection module unit 200 is selected. For example, the gas injection part 210 to be used is protected behind the spin cover 211 in addition to the gas injection part 210 in use, and a high temperature CVD growth process for 300 hours or more continuously can be realized by switching the gas injection part 210 to be used.

Fig. 4(a) to (d) are schematic diagrams illustrating a method of variously setting shapes of outlet portions of the gas injection parts 210 of the gas injection module unit 200 that can be formed in the embodiment of the present invention. The outlet shape of the graphite gas nozzle 212 of the multiple gas injection part 210 is selected according to the size and shape of the equipment mounted in the CVD reaction chamber 100, so that the optimal process gas, flow and distribution can be finely adjusted and supplied, and finally, a polycrystalline silicon carbide thick film or body with a uniform thickness of 10mm or more is manufactured.

In summary, the present invention is a method for controlling the gas injection module unit and the gas exhaust unit of the CVD chamber having a large capacity, which comprises a plurality of gas injection units, to maintain the uniform gas flow and distribution in the CVD reaction chamber, and continuously perform a long-term growth process for 300 hours or more without the interruption of the growth process and the replacement of the gas injection units, thereby manufacturing a polycrystalline silicon carbide thick film and a polycrystalline silicon carbide body having a uniform thickness of 10mm or more.

The present invention has been described above by way of an example that can be implemented, and the above-described embodiment is merely illustrative of the technical idea of the present invention, and various changes can be made without departing from the scope of the technical idea of the present invention, and those having knowledge in the field can understand it. Therefore, the scope of the invention is to be construed according to the provisions in the claims, rather than the specific embodiments, and all technical ideas within the scope and equivalence thereof should also be construed as the scope of the claims.

Claims

1. A high-capacity CVD apparatus equipped with a gas injection module unit, comprising: more than one gas injection module unit, more than one gas exhaust part, a CVD reaction cavity with internal equipment and an electric control part capable of controlling equipment; the electric control part controls the gas injection module unit.

2. A high capacity CVD apparatus equipped with a gas injection module unit according to claim 1, wherein the gas injection module unit is disposed at a side or a top of the CVD reaction chamber, the gas exhaust part is disposed at a side or a bottom of the CVD reaction chamber, and the gas injection module unit and the gas exhaust part are located opposite to each other.

3. A high capacity CVD apparatus equipped with a gas injection module unit according to claim 1, wherein the gas injection module unit comprises: the device comprises a rotary cover and more than two gas injection parts, wherein the rotary cover is provided with an opening, the gas injection parts are put into the growth process of the CVD equipment through the opening after being rotated, and the other gas injection parts are put into use after waiting for rotation on the back surface of the rotary cover.

4. A large-capacity CVD apparatus equipped with a gas injection module unit according to claim 3, wherein an inner diameter of the opening is equal to or larger than an outer diameter of an outlet portion of a gas nozzle of the gas injection part; the outlet part of the gas nozzle is a vertical section or a conical barrel shape with gradually increased diameter along the direction towards the interior of the CVD reaction cavity.

5. A high-capacity CVD apparatus equipped with a gas injection module unit according to claim 4, comprising: the rotating shaft penetrates through the more than two gas injection parts and is vertically connected with the rotating cover, and the rotating shaft is driven to rotate manually or by a motor; the opening is a conical structure with the diameter gradually reduced along the inner direction of the CVD reaction cavity.

6. A large capacity CVD apparatus equipped with a gas injection module unit according to claim 5, wherein the opening is supplied with the process gas through one or more of the gas injection parts, and the gas nozzles of the other gas injection parts are provided at the cutoff part of the spin cover; before the outlet of the gas injection part is reduced or blocked by more than 30-50% in use, the rotating cover is rotated, and the gas injection part is replaced to enable a formed body with the thickness of more than 10mm to carry out a CVD growth process for a long time.