CN114231997A - Method for cleaning carrier plate and application thereof - Google Patents

Method for cleaning carrier plate and application thereof Download PDF

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Publication number
CN114231997A
CN114231997A CN202111310480.8A CN202111310480A CN114231997A CN 114231997 A CN114231997 A CN 114231997A CN 202111310480 A CN202111310480 A CN 202111310480A CN 114231997 A CN114231997 A CN 114231997A
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CN
China
Prior art keywords
carrier plate
coating
cleaning
silicon wafer
acid
Prior art date
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Pending
Application number
CN202111310480.8A
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Chinese (zh)
Inventor
武瑞军
张永胜
董刚强
杨肸曦
彭孝龙
宋文化
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Suzhou Maxwell Technologies Co Ltd
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Suzhou Maxwell Technologies Co Ltd
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Application filed by Suzhou Maxwell Technologies Co Ltd filed Critical Suzhou Maxwell Technologies Co Ltd
Priority to CN202111310480.8A priority Critical patent/CN114231997A/en
Publication of CN114231997A publication Critical patent/CN114231997A/en
Priority to PCT/CN2022/088433 priority patent/WO2023077737A1/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/08—Iron or steel
    • C23G1/085—Iron or steel solutions containing HNO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/08—Iron or steel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/08—Iron or steel
    • C23G1/081—Iron or steel solutions containing H2SO4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/08—Iron or steel
    • C23G1/086—Iron or steel solutions containing HF
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/08—Iron or steel
    • C23G1/088—Iron or steel solutions containing organic acids
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/12—Light metals
    • C23G1/125—Light metals aluminium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The application discloses a method for cleaning a carrier plate and application thereof, and belongs to the technical field of carrier plate cleaning. A method of cleaning a carrier plate, the method comprising: s100, performing pre-coating treatment on the carrier plate to form a pre-coating film layer on the surface of the carrier plate, wherein the pre-coating film layer is made of metal oxides which are not acid-resistant; s200, placing the silicon wafer into the support plate obtained in the step S100, and performing film coating treatment on the silicon wafer by taking the support plate as a silicon wafer film coating carrier, wherein a transparent conductive film is formed on the surface of the support plate after the film coating treatment; s300, carrying out acid cleaning on the carrier plate obtained in the step S200 to remove the pre-plated film layer and the transparent conductive film on the surface of the carrier plate. The cleaning effect of support plate can be improved to this application, and can avoid the deformation of support plate in the cleaning process, can realize recycling of support plate.

Description

Method for cleaning carrier plate and application thereof
Technical Field
The application belongs to the technical field of carrier plate cleaning, and particularly relates to a carrier plate cleaning method and application thereof.
Background
In the field of photovoltaic cell manufacturing, a tool for carrying devices, i.e. a carrier plate, is commonly used. The carrier plate is a tool for carrying silicon wafers in the production process of photovoltaic cells, and the silicon wafers are usually placed in hole sites on the carrier plate so as to simultaneously coat the upper surface and the lower surface of the silicon wafers in one coating machine, for example, the upper surface is coated by a cathode sputtered downwards, and the lower surface is coated by a cathode sputtered upwards. The plating film formed on the surface of the silicon wafer is a transparent conductive film, typically an ITO (Indium Tin Oxide) thin film, but other types of transparent conductive films may be formed. After the carrier plate is used as a tool for bearing a silicon wafer, because a transparent conductive film such as an ITO film has super-strong water absorption characteristics, more and more ITO is accumulated on the carrier plate, so that excessive water vapor is brought to a silicon wafer coating process, the conversion efficiency of a battery piece is reduced, and the ITO film on the carrier plate needs to be cleaned regularly.
The traditional cleaning method of the carrier plate usually adopts the mode of firstly pickling and then sand blasting. However, the ITO film has good corrosion resistance, and is difficult to clean by acid cleaning, and the carrier plate is likely to be deformed during sand blasting, and thus the carrier plate is likely to be damaged, and further a failure occurs during subsequent silicon wafer mounting, so that the carrier plate cannot be reused, the cost is increased, and the production efficiency is also affected.
Therefore, there is a need for improvement of the carrier plate of the cleaning method of the carrier plate in the related art, which is susceptible to deformation during the cleaning process.
Disclosure of Invention
In view of the above-mentioned problems, the present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, the invention provides a method for cleaning a carrier plate and application thereof, which can improve the cleaning effect of the carrier plate, avoid or reduce the deformation of the carrier plate and overcome the defects in the prior art.
In order to solve the technical problem, the present application is implemented as follows:
according to an aspect of the present application, an embodiment of the present application provides a method for cleaning a carrier plate, the method including:
s100, performing pre-coating treatment on the carrier plate to form a pre-coating film layer on the surface of the carrier plate, wherein the pre-coating film layer is made of metal oxides which are not acid-resistant;
s200, placing the silicon wafer into the support plate obtained in the step S100, and performing film coating treatment on the silicon wafer by taking the support plate as a silicon wafer film coating carrier, wherein a transparent conductive film is formed on the surface of the support plate after the film coating treatment;
s300, carrying out acid cleaning on the carrier plate obtained in the step S200 to remove the pre-plated film layer and the transparent conductive film on the surface of the carrier plate.
In some embodiments, the carrier plate comprises a carrier plate body and a silicon wafer clamp arranged on the carrier plate body, wherein the silicon wafer clamp is provided with a hole site for accommodating a silicon wafer;
in step S100, the pre-coating treatment of the carrier plate is to pre-coat the silicon wafer fixture, or the pre-coating treatment of the carrier plate is to pre-coat the silicon wafer fixture and the carrier plate body.
In some embodiments, the pre-coating layer is prepared by one or more of spraying, sputter coating, or evaporation coating.
In some embodiments, the sputter coating includes a magnetron sputter coating, and the pre-coating layer is formed by coating a metal or a metal oxide by a magnetron sputter coating method.
In some embodiments, the material of the pre-coating layer comprises ZnO, ZnSnOx、SnO、ZnAlOxOr AZO.
In some embodiments, the thickness of the pre-plating film layer is 5nm to 100 nm.
In some embodiments, the acid washing is to wash the support plate with an aqueous or organic solution having acidity.
In some embodiments, the temperature of the acid washing is 25 ℃ to 45 ℃ and the time of the acid washing is 5min to 60 min;
and/or the aqueous or organic solution having acidity comprises at least one of nitric acid, sulfuric acid, hydrochloric acid, acetic acid, or hydrofluoric acid.
In some embodiments, after step S300 is finished, a step of performing a surface treatment on the carrier board is further included to remove the residual pre-plating film layer or the transparent conductive film.
According to another aspect of the present application, the present application also provides an application of the method for cleaning the carrier plate as described above in the production of photovoltaic cells.
The technical scheme of the invention at least has the following beneficial effects:
in the embodiment of the application, the cleaning method of the carrier plate comprises the steps of performing pre-coating treatment on the carrier plate to form a pre-coating film layer on the surface of the carrier plate, wherein the pre-coating film layer is made of metal oxide which is not acid-resistant, so that the problem that the carrier plate is not cleaned cleanly during acid cleaning can be solved; after the pre-coating film layer is formed on the support plate, the silicon chip can be installed on the support plate, the support plate with the silicon chip is placed on a production line to be normally used, namely the support plate is used as a silicon chip coating carrier to carry out coating treatment on the silicon chip, after the support plate is used for a period of time, a transparent conductive film can be formed on the surface of the support plate, the silicon chip can be taken out of the support plate, and the support plate is taken out to carry out acid washing on the support plate. Therefore, the characteristic of acid-proof performance of the pre-coating film layer on the carrier plate can be utilized to completely acid-wash the transparent conductive film on the carrier plate together with the pre-coating film layer, so that the acid-washing effect is improved, the pre-coating film layer and the transparent conductive film on the surface of the carrier plate can be completely removed, sand-blasting treatment can be avoided under certain conditions, and the problems that the carrier plate is easy to deform, the subsequent use is influenced, the cost is increased and the like during sand-blasting treatment can be avoided. Further, when the carrier plate is used next time, pre-coating treatment can be carried out again before use, so that the carrier plate can be recycled.
The cleaning method of the carrier plate provided by the embodiment of the invention has the advantages of simple and feasible process flow, easy operation and low cost, can realize the reutilization of the plated carrier plate, is easy to realize large-scale production and has obvious economic benefit.
Drawings
Fig. 1 is a schematic flow chart of a method for cleaning a carrier plate according to some exemplary embodiments of the present disclosure;
fig. 2 is a schematic structural diagram of a carrier plate according to some exemplary embodiments of the present disclosure.
Reference numerals:
1-a carrier plate; 101-a carrier plate body; 102-a silicon wafer fixture; 2-silicon chip.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described implementations are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer.
The endpoints of the ranges and any values disclosed herein are not limited to the precise range or value, and such ranges or values should be understood to encompass values close to those ranges or values. For numerical ranges, one or more new numerical ranges may be obtained by combining the individual values, or by combining the individual values.
It should be noted that the term "and/or"/"used herein is only one kind of association relationship describing associated objects, and means that there may be three relationships, for example, a and/or B, and may mean: a exists alone, A and B exist simultaneously, and B exists alone. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
In the description of the present application, use of the term "at least one of," "one or more of," or other like terms to connect a list of items may imply any combination of the listed items. For example, if item A, B is listed, the phrase "at least one of A, B" means only a; only B; or A and B. In another example, if item A, B, C is listed, the phrase "at least one of A, B, C" means a only; or only B; only C; a and B (excluding C); a and C (excluding B); b and C (excluding A); or A, B and C. Item a may comprise a single element or multiple elements. Item B may comprise a single element or multiple elements. Item C may comprise a single element or multiple elements.
The person skilled in the art understands that the prior art methods for cleaning carrier plates still suffer from more or less drawbacks and that there is still a need for improvements, as mentioned in the introduction. For example, when the carrier plate is used as a carrier for carrying a silicon wafer and is used for coating the silicon wafer, a transparent conductive film such as an ITO film can be attached to the surface of the carrier plate, and the ITO film is difficult to clean by acid cleaning because the ITO film has good corrosion resistance. Particularly, each hole position on the support plate is provided with a silicon wafer clamp special for placing a silicon wafer, after acid washing, the silicon wafer clamp needs to be subjected to sand blasting treatment continuously due to incomplete acid washing, and the sand blasting treatment is easy to cause the silicon wafer clamp of the support plate to deform, so that faults occur during subsequent silicon wafer installation, the use of the support plate is influenced, and the production efficiency is also influenced. Therefore, how to clean the carrier plate is thorough, and the deformation of the carrier plate caused by the cleaning can be reduced or avoided, which is a problem that needs to be solved urgently in the industry.
Therefore, the technical scheme of the embodiment of the application provides the method for cleaning the carrier plate, which can effectively avoid the deformation of the carrier plate and effectively improve the cleaning effect, can solve the problems that the cleaning effect of the method for cleaning the carrier plate in the related art is poor and the deformation of the carrier plate is easily caused, can reduce the cost and improve the production efficiency. See below for a description of specific embodiments.
Referring to fig. 1 and fig. 2, in some embodiments of the present application, a method for cleaning a carrier is provided, the method comprising:
s100, performing pre-coating treatment on the carrier plate to form a pre-coating film layer on the surface of the carrier plate, wherein the pre-coating film layer is made of metal oxides which are not acid-resistant;
s200, placing the silicon wafer into the support plate obtained in the step S100, and performing film coating treatment on the silicon wafer by taking the support plate as a silicon wafer film coating carrier, wherein a transparent conductive film is formed on the surface of the support plate after the film coating treatment;
s300, carrying out acid cleaning on the carrier plate obtained in the step S200 to remove the pre-plated film layer and the transparent conductive film on the surface of the carrier plate.
According to the technical scheme provided by the embodiment of the invention, in order to avoid incomplete or unclean pickling of the carrier plate, before the carrier plate is used, pre-coating treatment is carried out on the carrier plate, namely a pre-coating film layer is formed on the surface of the carrier plate, and then the carrier plate is used as a carrier for bearing a silicon wafer to be normally used; therefore, when the carrier plate is used and is subjected to acid cleaning, the characteristic of acid-proof property of the pre-coating film layer can be utilized to completely acid-clean the transparent conductive film such as the ITO film and the pre-coating film layer together, the carrier plate can be cleaned without sand blasting treatment, the process is simplified, the cleaning effect is improved, and especially the deformation of the carrier plate can be avoided.
Specifically, the cleaning method of the carrier plate comprises the steps of firstly carrying out pre-coating treatment on the carrier plate to form a pre-coating film layer on the surface of the carrier plate, wherein the material of the pre-coating film layer comprises metal oxide which is not acid-resistant, so that the problem that the carrier plate is not cleanly cleaned during acid washing can be avoided; after the pre-coating film layer is formed on the support plate, the silicon chip can be installed on the support plate, the support plate with the silicon chip is placed on a production line to be normally used, namely the support plate is used as a silicon chip coating carrier to carry out coating treatment on the silicon chip, after the support plate is used for a period of time, a transparent conductive film can be formed on the surface of the support plate, the silicon chip can be taken out of the support plate, and the support plate is taken out to carry out acid washing on the support plate. Like this, can utilize the acidproof characteristic of precoating rete on the support plate, completely acid wash the transparent conducting film on the support plate in the lump with the precoating rete in advance, the pickling effect has been improved, can get rid of precoating rete and the transparent conducting film on support plate surface completely, can no longer carry out sand blasting under some circumstances, thereby can avoid leading to the support plate to warp easily when sand blasting is handled, influence follow-up use, raise the cost scheduling problem, can also avoid the deposited transparent conducting film on the support plate to drop the battery piece coating film that causes uneven, the service quality of support plate is improved, the yield of producing the line has been promoted. Further, when the carrier plate is used next time, pre-coating treatment can be carried out again before use, so that the carrier plate can be recycled. Therefore, the problem that the cleaning effect of the cleaning method of the carrier plate in the prior art is poor and deformation of the carrier plate is easily caused is effectively solved.
It should be noted that, during the coating process, the material of the transparent conductive film formed on the carrier plate is the same as that of the transparent conductive film formed on the silicon wafer, and the transparent conductive film can have various types, including but not limited to an ITO film, according to different use requirements or process requirements. The embodiment of the present invention has no limitation on the specific type of the transparent conductive film, and those skilled in the art can flexibly select the transparent conductive film according to actual needs as long as the object of the present invention is not limited. For simplicity and convenience of description, the embodiments of the present application mainly use a transparent conductive film as an example of an ITO thin film known in the art.
In some embodiments, the transparent conductive film is an ITO thin film.
In some embodiments, the material of the carrier plate may be a metal or an alloy or various steel materials. For example, the material of the carrier plate includes stainless steel, aluminum alloy, or other materials.
According to the embodiment of the application, before the carrier plate is subjected to pre-coating treatment, the method can further comprise the step of pre-cleaning the carrier plate. The pre-cleaning is to clean the carrier plate to remove dirt or impurities or slightly damaged pollutants on the surface of the carrier plate, so that the subsequent pre-coating treatment is facilitated, and the uniformity of the pre-coating is facilitated.
As shown in fig. 2, in some embodiments, the carrier plate 1 includes a carrier plate body 101 and a silicon wafer holder 102 disposed on the carrier plate body 101, and the silicon wafer holder 102 is provided with a hole for accommodating the silicon wafer 2. Optionally, the carrier body 101 may include two support columns arranged in parallel, the silicon wafer clamp 102 is disposed between the two support columns, and the silicon wafer clamp 102 may be detachably connected to the two support columns, respectively. The silicon wafer holder 102 is provided with one or more holes for accommodating the silicon wafer 2, and the silicon wafer 2 can be placed in the holes to facilitate the coating treatment of the upper and lower surfaces of the silicon wafer.
In some embodiments, in step S100, the pre-coating treatment on the carrier plate is a pre-coating treatment on the silicon wafer fixture, or the pre-coating treatment on the carrier plate is a pre-coating treatment on the silicon wafer fixture and the carrier plate body.
When the carrier plate is cleaned, the problems that an ITO film on a silicon wafer fixture of the carrier plate is difficult to clean and the silicon wafer fixture of the carrier plate is easy to deform exist mainly exist, so that when the carrier plate is subjected to pre-coating treatment, the silicon wafer fixture can be subjected to pre-coating treatment independently, and a pre-coating film layer is formed on the surface of the silicon wafer fixture; certainly, in order to simplify the process and facilitate the operation, the whole carrier plate may also be subjected to pre-coating treatment, that is, both the carrier plate body and the silicon wafer fixture are subjected to pre-coating treatment, so that pre-coating layers are formed on the surfaces of both the silicon wafer fixture and the carrier plate body.
Optionally, a pre-coating film layer is formed on both the upper surface and the lower surface of the carrier plate, or a pre-coating film layer is formed on the upper surface or the lower surface of the carrier plate. Specifically, pre-coating films are formed on the upper surface and the lower surface of the silicon wafer clamp, or the pre-coating films are formed on the upper surface or the lower surface of the silicon wafer clamp; or the upper surface and the lower surface of the silicon wafer clamp and the upper surface and the lower surface of the carrier plate body are both provided with pre-coating films, or the upper surface or the lower surface of the silicon wafer clamp is provided with a pre-coating film, and the upper surface or the lower surface of the carrier plate body is provided with a pre-coating film.
In some embodiments, the pre-coating layer is prepared by one or more of spraying, sputter coating, or evaporation coating. The pre-coating layer may be formed by sputtering, such as magnetron sputtering, or spray coating or evaporation coating, or other methods known in the related art may also be used. In consideration of the factors of easy realization, convenient operation and control, film coating effect and the like, the pre-film coating treatment is preferably carried out by adopting a sputtering mode, particularly a magnetron sputtering mode.
In some embodiments, the sputter coating includes a magnetron sputter coating, and the pre-coating layer is formed by coating a metal or a metal oxide by a magnetron sputter coating method. The carrier plate is pre-coated by adopting a magnetron sputtering method, the carrier plate is sent into a coating chamber, and one or more pre-coating film layers are sputtered on the carrier plate. The specific operating conditions of the magnetron sputtering can be selected and set according to actual conditions, for example, the power of the magnetron sputtering coating equipment can be 0.1KW-50KW, further can be 0.5KW-20KW, and the specific operating conditions of the magnetron sputtering are not limited in the embodiment of the application.
The material of the pre-plating film layer can be metal oxide, further can be transition metal oxide, and the metal oxide or the transition metal oxide has the characteristic of being intolerant to acid, namely, has the property of being intolerant to acid washing solution. In some embodiments, the material of the pre-coating film layer comprises ZnO and ZnSnOx、SnO、ZnAlOxOr AZO. Specifically, the material of the pre-plating film layer can be ZnO, ZnSnOx, SnO or ZnAlOxThe coating can be AZO or a composite coating consisting of any two or more of the above oxides.
The pre-coating film layer formed by the oxides not only has the property of acid intolerance, but also is convenient to coat, has good film layer binding force with a carrier plate base material such as stainless steel and an ITO film, can be washed off together with the pre-coating film layer and the ITO film during acid washing, and ensures that the acid washing is more thorough.
When ZnO, ZnSnOx, SnO or ZnAlOx is plated, Zn, ZnSn, Sn and ZnAl targets can be respectively adopted for reactive magnetron sputtering; when the AZO is plated, the target material can be plated by adopting an AZO target to carry out magnetron sputtering or reactive magnetron sputtering.
In some embodiments, the material of the pre-plated film layer is ZnO (zinc oxide).
In some embodiments, the material of the pre-plating film layer is AZO (aluminum-doped zinc oxide or aluminum-doped zinc oxide).
The mode of adopting the material of the pre-plated film layer as ZnO or AZO can facilitate the acid cleaning of ITO, because ZnO and AZO have better non-acid resistance.
In some embodiments, the thickness of the pre-plating film layer is 5nm to 100 nm. Preferably, in some embodiments, the thickness of the pre-plating film layer is 5nm to 50 nm. More preferably, in some embodiments, the thickness of the pre-plating film layer is 5nm to 30 nm. Specifically, the thickness of the pre-plating film layer may be 5nm, 8nm, 10nm, 12nm, 15nm, 20nm, 25nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.
According to the embodiment of the application, the thickness of the pre-plating film layer formed on the surface of the carrier plate can be 5nm-100nm, and considering the factors such as cost, the thickness of the pre-plating film layer is preferably 5nm-30 nm. If the thickness of the pre-plating film layer is too thin, for example, less than 5nm, the effect is not good enough, namely, all the transparent conductive films and the pre-plating film layer are not easy to be simultaneously washed away in acid washing; if the thickness of the pre-plating film layer is too thick, such as greater than 100nm, higher conditions or longer reaction time are needed for removing the pre-plating film layer in the subsequent cleaning process, and the pre-plating film layer is wasted and the cost is higher. Therefore, the thickness of the pre-plating film layer is controlled within the range, and the balance between effective improvement of the cleaning effect of the carrier plate and the benefit of removal or cost reduction in the subsequent acid washing process can be achieved.
According to the embodiment of the present application, in step S200, a carrier plate having a pre-plating film layer is mainly used as a carrier for supporting a silicon wafer to perform a film plating process on the silicon wafer, and in this process, a transparent conductive film is formed on the surface of the carrier plate. The specific operation mode and operation conditions for performing the film coating treatment on the silicon wafer are not limited in the embodiments of the present application, and reference may be made to the existing film coating treatment mode for the silicon wafer, which is not described in detail herein.
In some embodiments, in step S300, the acid washing is to wash the support plate by using an aqueous solution or an organic solution (which may be simply referred to as an acid washing solution) with acidity. Specifically, the carrier plate can be completely soaked in an acidic aqueous solution or an acidic organic solution for acid washing, so that the surface of the carrier plate can be sufficiently treated; and the cleaning mode of immersing the carrier plate into the pickling solution is simple to operate, easy to realize and low in cost.
In some embodiments, the temperature of the acid washing may be 25 ℃ to 45 ℃ and the time of the acid washing may be 5min to 60 min; further, the pickling temperature is 25-35 ℃, and the pickling time is 10-45 min. Specifically, the temperature of the acid washing may be, for example, 25 ℃, 26 ℃, 28 ℃, 30 ℃, 32 ℃, 34 ℃, 35 ℃, 38 ℃, 40 ℃, 45 ℃ or the like, and the time of the acid washing may be, for example, 5min, 10min, 15min, 20min, 25min, 30min, 35min, 40min, 45min, 50min, 60min or the like.
According to the embodiment of the application, when the carrier plate is pickled, the pickling temperature can be normal temperature, or heating can be performed slightly, so that the process is easy to realize. In order to achieve a relatively good cleaning effect, the cleaning time may be 10min or more, and more preferably 20min or more. By adopting the proper pickling temperature and pickling time, the transparent conductive film and the pre-plated film layer on the surface of the carrier plate can be effectively removed, the damage to the carrier plate can be avoided, and the production efficiency is improved.
Further, in order to make the pickling more uniform and facilitate the operation, a soaking manner may be adopted, i.e., the carrier plate is soaked in the acid solution for cleaning. Or, in other embodiments, the acid solution may be uniformly sprayed on the carrier plate by spraying.
The specific types of the pickling solution used in the pickling process can be diversified under the condition of meeting the requirements of improving the cleaning effect of the carrier plate, avoiding the deformation of the carrier plate and the like. In order to optimize the cleaning effect of the carrier plate, in some embodiments, the acidic aqueous solution or organic solution includes at least one of nitric acid, sulfuric acid, hydrochloric acid, acetic acid, or hydrofluoric acid. For example, the acidic aqueous solution or organic solution may be nitric acid, sulfuric acid, hydrochloric acid, acetic acid, hydrofluoric acid, or a mixture of any two or more of the above acidic solutions at any ratio. Preferably, in some embodiments, the aqueous or organic solution having acidity is nitric acid, sulfuric acid or hydrochloric acid, and more preferably, nitric acid is used as the acid washing solution.
It is to be understood that the nitric acid, sulfuric acid, hydrochloric acid, or the like mentioned above refers to an aqueous solution of each acidic substance, that is, a nitric acid solution, a sulfuric acid solution, or a hydrochloric acid solution, and particularly, a dilute nitric acid solution, a dilute sulfuric acid solution, or a dilute hydrochloric acid solution with a lower concentration may be used in the acid washing. For example, the acid washing solution may be a dilute nitric acid solution, a dilute sulfuric acid solution, or a dilute hydrochloric acid solution having a mass concentration of 0.1% to 10%, preferably a dilute nitric acid solution having a mass concentration of 0.1% to 10%.
In addition, in other embodiments, the acidic aqueous solution or organic solution is not limited to the above-mentioned ones, and other types of the acidic aqueous solution or organic solution can be used in the case of meeting the requirements of improving the cleaning effect of the carrier plate, avoiding the deformation of the carrier plate, and the like, and will not be described in detail herein.
In some embodiments, after step S300 is finished, a step of performing a surface treatment on the carrier board is further included to remove the residual pre-plating film layer or the transparent conductive film.
Alternatively, the surface treatment may be a sand blasting treatment, or may be another treatment method.
It should be understood that, in some cases, after the acid cleaning, some parts of the surface of the carrier may not be cleaned by the acid cleaning, that is, some parts of the surface of the carrier may have a residual film layer, and then a surface treatment, such as a sand blasting treatment, may be performed on the parts of the surface of the carrier to thoroughly clean the carrier. In other cases, of course, the carrier plate can be completely cleaned by pickling, in which case no surface treatment is required. That is, in the method for cleaning a carrier plate according to the embodiment of the present application, the step of surface treatment is an optional operation and is not a step that is necessarily performed.
As an example, the method for cleaning a carrier plate provided in the embodiment of the present invention includes the following steps:
s100, performing pre-coating treatment on the carrier plate to form a pre-coating film layer on the surface of the carrier plate, wherein the pre-coating film layer is made of metal oxides which are not acid-resistant; the material of the carrier plate can be stainless steel or aluminum alloy; the carrier plate comprises a carrier plate body and a silicon wafer fixture arranged on the carrier plate body, wherein the silicon wafer fixture is provided with a hole site for accommodating a silicon wafer, and the silicon wafer can be arranged in the hole site; when the pre-coating treatment is carried out, the pre-coating treatment can be carried out on the silicon wafer fixture, or the pre-coating treatment can be carried out on both the silicon wafer fixture and the carrier plate body.
The preparation method of the pre-coating film layer comprises one or more of spraying, sputtering coating or evaporation coating, preferably adopts a magnetron sputtering method to pre-coat the carrier plate, sends the carrier plate into a coating chamber, and sputters one or more pre-coating film layers on the carrier plate. The material of the pre-coating film layer comprises ZnO and ZnSnOx、SnO、ZnAlOxOr AZO, preferably ZnO or AZO. The thickness of the pre-plating film layer is 5nm-100nm, preferably 5nm-30 nm.
S200, placing the silicon wafer into the support plate obtained in the step S100, and performing film coating treatment on the silicon wafer by taking the support plate as a silicon wafer film coating carrier, wherein a transparent conductive film is formed on the surface of the support plate after the film coating treatment; wherein the transparent conductive film is an ITO film.
For example, when the pre-coating treatment is carried out, the pre-coating treatment is carried out on the silicon wafer fixture. And mounting the silicon wafer clamp coated with the pre-coating film layer on the carrier plate body, and placing the carrier plate after mounting on a production line for normal use. As a carrier for coating a silicon wafer, after a carrier plate is used for a long time, a thicker ITO film is coated on the surface of the carrier plate, and acid washing is needed.
S300, carrying out acid cleaning on the carrier plate obtained in the step S200 to remove the pre-plated film layer and the transparent conductive film on the surface of the carrier plate. The acid washing is to wash the carrier plate with an acidic aqueous solution or an acidic organic solution, and specifically, the carrier plate may be completely immersed in the acidic aqueous solution or the acidic organic solution to be washed with acid. The pickling temperature can be 25-45 ℃, and the pickling time can be 5-60 min. The aqueous solution or organic solution having acidity includes at least one of nitric acid, sulfuric acid, hydrochloric acid, acetic acid, or hydrofluoric acid, and nitric acid is preferably used as the acid washing solution.
After the pickling, if some part of the surface of the carrier is not cleaned by pickling, the part of the surface of the carrier may be subjected to a surface treatment such as sand blasting.
Because the silicon wafer fixture has high processing precision, part of the silicon wafer fixture is deformed due to sand blasting, so that the silicon wafer cannot be placed at the correct position, and the film coating is influenced. In the embodiment of the application, the film layer which is easy to corrode by acid is plated on the silicon wafer clamp in advance, namely the film layer is plated in advance, so that the acid washing can be thorough, and the sand blasting operation can be avoided.
In some embodiments, the present application further provides an application of the method for cleaning a carrier plate as described above in photovoltaic cell production.
According to the cleaning method of the carrier plate provided by the embodiment of the invention, the non-acid-resistant characteristic of the pre-plated film layer is utilized, so that the ITO film on the silicon wafer clamp of the carrier plate, such as the carrier plate, can be thoroughly cleaned without performing sand blasting treatment, and the deformation of the silicon wafer clamp of the carrier is avoided. Namely, the method has excellent cleaning effect on the carrier plate, can completely remove the ITO film on the surface of the carrier plate, does not cause deformation of the carrier plate, can realize recycling of the carrier plate, is favorable for reducing production cost and improves production efficiency.
The invention has not been described in detail and is in part known to those of skill in the art.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A method for cleaning a carrier plate, the method comprising:
s100, performing pre-coating treatment on the carrier plate to form a pre-coating film layer on the surface of the carrier plate, wherein the pre-coating film layer is made of metal oxides which are not acid-resistant;
s200, placing the silicon wafer into the support plate obtained in the step S100, and performing film coating treatment on the silicon wafer by taking the support plate as a silicon wafer film coating carrier, wherein a transparent conductive film is formed on the surface of the support plate after the film coating treatment;
s300, carrying out acid cleaning on the carrier plate obtained in the step S200 to remove the pre-plated film layer and the transparent conductive film on the surface of the carrier plate.
2. The method for cleaning the carrier plate according to claim 1, wherein the carrier plate comprises a carrier plate body and a silicon wafer fixture arranged on the carrier plate body, wherein the silicon wafer fixture is provided with a hole for accommodating a silicon wafer;
in step S100, the pre-coating treatment of the carrier plate is to pre-coat the silicon wafer fixture, or the pre-coating treatment of the carrier plate is to pre-coat the silicon wafer fixture and the carrier plate body.
3. The method for cleaning a carrier plate according to claim 1, wherein the preparation method of the pre-coating layer comprises one or more of spraying, sputter coating or evaporation coating.
4. The method for cleaning a carrier plate according to claim 3, wherein the sputter coating comprises magnetron sputter coating, and the pre-coating layer is formed by coating a metal or a metal oxide by a magnetron sputter coating method.
5. The method for cleaning carrier plate according to claim 1, wherein the material of the pre-coating film layer comprises ZnO and ZnSnOx、SnO、ZnAlOxOr AZO.
6. The method for cleaning a carrier plate according to claim 1, wherein the thickness of the pre-plating film layer is 5nm to 100 nm.
7. A method for cleaning a carrier plate according to any one of claims 1-6, characterized in that said acid washing is a washing of the carrier plate with an aqueous or organic solution having an acidic property.
8. The method for cleaning the carrier plate according to claim 7, wherein the pickling temperature is 25-45 ℃, and the pickling time is 5-60 min;
and/or the aqueous or organic solution having acidity comprises at least one of nitric acid, sulfuric acid, hydrochloric acid, acetic acid, or hydrofluoric acid.
9. The method for cleaning a carrier plate according to any one of claims 1 to 6, wherein after step S300 is finished, the method further comprises a step of performing surface treatment on the carrier plate to remove the residual pre-plating film layer or the transparent conductive film.
10. Use of a method of cleaning a carrier plate according to any of claims 1-9 in the production of photovoltaic cells.
CN202111310480.8A 2021-11-08 2021-11-08 Method for cleaning carrier plate and application thereof Pending CN114231997A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115207158A (en) * 2022-07-07 2022-10-18 通威太阳能（安徽）有限公司 Preparation method of solar cell, solar cell film-coating carrier plate and application thereof
WO2023077737A1 (en) * 2021-11-08 2023-05-11 苏州迈为科技股份有限公司 Carrier plate cleaning method and use thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090286071A1 (en) * 2008-05-13 2009-11-19 Nitto Denko Corporation Transparent conductive film and method for production thereof
CN113382554A (en) * 2021-06-04 2021-09-10 广东工业大学 Cleaning method of laser forming metal circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277125A (en) * 2004-03-25 2005-10-06 Matsushita Electric Ind Co Ltd Carrier and carrier washing method
CN102485357B (en) * 2010-12-03 2014-11-05 北京北方微电子基地设备工艺研究中心有限责任公司 Method and device for cleaning support plate and substrate film-plating device
CN111490126A (en) * 2019-01-29 2020-08-04 上海理想万里晖薄膜设备有限公司 Method for cleaning carrier plate
CN113201718B (en) * 2021-04-01 2022-07-12 深圳仕上电子科技有限公司 Plating chamber inner wall component with sacrificial layer, preparation method and cleaning method thereof
CN114231997A (en) * 2021-11-08 2022-03-25 苏州迈为科技股份有限公司 Method for cleaning carrier plate and application thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090286071A1 (en) * 2008-05-13 2009-11-19 Nitto Denko Corporation Transparent conductive film and method for production thereof
CN113382554A (en) * 2021-06-04 2021-09-10 广东工业大学 Cleaning method of laser forming metal circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023077737A1 (en) * 2021-11-08 2023-05-11 苏州迈为科技股份有限公司 Carrier plate cleaning method and use thereof
CN115207158A (en) * 2022-07-07 2022-10-18 通威太阳能（安徽）有限公司 Preparation method of solar cell, solar cell film-coating carrier plate and application thereof
CN115207158B (en) * 2022-07-07 2023-10-13 通威太阳能（安徽）有限公司 Preparation method of solar cell, solar cell coating carrier plate and application thereof

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