WO2023077737A1

WO2023077737A1 - Carrier plate cleaning method and use thereof

Info

Publication number: WO2023077737A1
Application number: PCT/CN2022/088433
Authority: WO
Inventors: 武瑞军; 张永胜; 董刚强; 杨肸曦; 彭孝龙; 宋文化
Original assignee: 苏州迈为科技股份有限公司
Priority date: 2021-11-08
Filing date: 2022-04-22
Publication date: 2023-05-11
Also published as: CN114231997A

Abstract

The present application discloses a carrier plate cleaning method and a use thereof, relating to the technical field of carrier plate cleaning. The carrier plate cleaning method comprises: S100, performing pre-coating treatment on a carrier plate, causing a pre-coating layer to be formed on a surface of the carrier plate, and a material of the pre-coating layer comprising a non-acid-resistant metal oxide; S200, placing a silicon wafer in the carrier plate obtained in step S100, and performing coating treatment on the silicon wafer using the carrier plate as a silicon wafer coating carrier, so that after the coating treatment, a transparent electrically conductive film is formed on the surface of the carrier plate; S300, performing acid pickling on the carrier plate of step S200, so as to remove the pre-coating layer and the transparent conductive film from the surface of the carrier plate. The present application can improve a carrier plate cleaning effect, and can prevent deformation of the carrier plate in the cleaning process, so that repeated use of the carrier plate can be achieved.

Description

Carrier plate cleaning method and its application

technical field

The present application relates to the technical field of carrier plate cleaning, in particular to a carrier plate cleaning method and its application.

Background technique

In the field of photovoltaic cell manufacturing, the tool used to carry the device is usually used, that is, the carrier plate. The carrier plate is a tool used to carry silicon wafers in the production process of photovoltaic cells. Usually, the silicon wafers are placed in the holes on the carrier plate to realize the simultaneous completion of the upper and lower surfaces of the silicon wafer in a coating machine. For coating, for example, the upper surface is coated with a downward sputtering cathode, and the lower surface is coated with an upward sputtering cathode. The coating film formed on the surface of the silicon wafer is a transparent conductive film, usually an ITO (Indium Tin Oxide, tin-doped indium oxide) film, and of course other types of transparent conductive films can also be formed. As a tool for carrying silicon wafers, after a period of use, since the transparent conductive film such as ITO thin film has super water absorption characteristics, more and more ITO will be accumulated on the carrier board, which will bring serious problems to the coating process of silicon wafers. Excessive water vapor will reduce the conversion efficiency of the cell, so the ITO film on the carrier needs to be cleaned regularly.

The traditional method of cleaning the substrate usually adopts the method of pickling first and then sandblasting. However, due to the good corrosion resistance of the ITO film, it is difficult to clean it with acid cleaning, and it is necessary to continue the sandblasting treatment, which can easily cause deformation of the carrier plate during sandblasting, and damage to the carrier plate, resulting in A failure occurred during the subsequent installation of the silicon wafer, which made the carrier board no longer reusable, which increased the cost and affected the production efficiency.

Therefore, the carrier plate cleaning method in the related art needs to be improved on the problem that the carrier plate is easily deformed during the cleaning process.

application content

In view of the above-mentioned problems, the present application aims to solve one of the technical problems in the related art at least to a certain extent. For this reason, the application provides a kind of carrier board cleaning method and its application, can improve the cleaning effect of carrier board, and can avoid or reduce the deformation of carrier board, can overcome the deficiencies in the prior art.

In order to solve the above-mentioned technical problems, the application is implemented as follows:

According to one aspect of the present application, the embodiment of the present application provides a method for cleaning a carrier plate, the method comprising:

S100, performing pre-coating treatment on the carrier, so that a pre-coating layer is formed on the surface of the carrier, and the material of the pre-coating layer includes an acid-resistant metal oxide;

S200, placing the silicon wafer in the carrier plate obtained in step S100, using the carrier plate as a silicon wafer coating carrier to perform coating treatment on the silicon wafer, after the coating treatment, a transparent conductive film is formed on the surface of the carrier plate;

S300. Pickling the carrier board in step S200 to remove the pre-coated film layer and the transparent conductive film on the surface of the carrier board.

In some of the embodiments, the carrier includes a carrier body and a silicon wafer fixture disposed on the carrier body, and the silicon wafer fixture is provided with holes for accommodating silicon wafers;

In step S100, the pre-coating treatment on the carrier is to perform the pre-coating treatment on the silicon wafer holder, or the pre-coating treatment on the carrier is to perform the pre-coating treatment on the silicon wafer holder and the carrier board The body is pre-coated.

In some of the embodiments, the carrier body includes two support columns arranged relatively parallel, and the silicon wafer fixture is arranged between the two support columns; the silicon wafer fixture is respectively connected with the two The support column is detachably connected.

In some of the embodiments, the preparation method of the pre-coating layer includes one or more of spray coating, sputter coating or evaporation coating.

In some of the embodiments, the sputtering coating includes magnetron sputtering coating, and the pre-coating layer is formed by coating a metal or a metal oxide by a magnetron sputtering coating method.

In some of the embodiments, the material of the pre-coating layer includes at least one of ZnO, ZnSnO _x , SnO, ZnAlO _x or AZO.

In some of the embodiments, the material of the pre-coating layer is ZnO or AZO.

In some of the implementation manners, the thickness of the pre-coating layer is 5nm-100nm.

In some of the embodiments, the thickness of the pre-coating layer is 5nm-30nm.

In some of the embodiments, the transparent conductive film includes an ITO film.

In some of the embodiments, the material of the carrier includes metal or alloy.

In some of the embodiments, the pickling is to use an acidic aqueous solution or an organic solution to clean the carrier plate.

In some of the embodiments, the pickling temperature is 25°C-45°C, and/or the pickling time is 5min-60min.

In some of the embodiments, the acidic aqueous solution or organic solution includes at least one of nitric acid, sulfuric acid, hydrochloric acid, acetic acid or hydrofluoric acid.

In some of the embodiments, after the step S300 is finished, a step of surface treatment of the carrier is further included to remove the residual pre-coating layer or transparent conductive film.

In some of the embodiments, the step of pre-cleaning the carrier plate is also included before the step S100.

According to another aspect of the present application, the embodiment of the present application also provides an application of the aforementioned method for cleaning the carrier plate in the production of photovoltaic cells.

In some of the embodiments, the carrier plate is used as a tool for carrying silicon wafers in the process of manufacturing photovoltaic cells.

Implementing the technical solution of the present application has at least the following beneficial effects:

In the embodiment of the present application, in the cleaning method of the carrier provided, the carrier is pre-coated to form a pre-coated layer on the surface of the carrier. The material of the pre-coated layer includes metal oxides that are not acid-resistant, which can Avoid the problem that the carrier board is not clean during pickling; after the pre-coating layer is formed on the carrier board, the silicon wafer can be installed on the carrier board, and the carrier board with the silicon wafer can be placed on the production line for normal use, that is, The carrier board is used as the silicon wafer coating carrier to coat the silicon wafer. After the carrier board is used for a period of time, a transparent conductive film will be formed on the surface of the carrier board. The silicon wafer can be taken out from the carrier board, and the carrier board can be taken out Carrier plates were pickled. In this way, the acid-resistant property of the pre-coating layer on the carrier can be used to completely pickle the transparent conductive film on the carrier together with the pre-coating layer, which improves the pickling effect and can completely remove the pre-coating film on the surface of the carrier. Layer and transparent conductive film, in some cases, sandblasting treatment can no longer be performed, so as to avoid problems such as deformation of the carrier plate, affecting subsequent use, and increasing costs during sandblasting treatment. Furthermore, when the carrier board is used next time, pre-coating treatment can be performed again before use, so as to realize the recycling of the carrier board.

The carrier plate cleaning method provided in the embodiment of the present application has a simple process flow, easy operation, low cost, can realize the repeated utilization of the plated carrier plate, is easy to realize large-scale production, and has obvious economic benefits.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description These are some embodiments of the present application. Those skilled in the art can also obtain other drawings based on these drawings without any creative effort.

FIG. 1 is a schematic flow diagram of a cleaning method for a carrier provided in some exemplary embodiments of the present application;

Fig. 2 is a schematic structural diagram of a carrier provided in some exemplary embodiments of the present application.

Reference signs:

1-carrier; 101-carrier body; 102-silicon wafer jig; 2-silicon wafer.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application. Those who do not indicate the specific conditions in the examples are carried out according to the conventional conditions or the conditions suggested by the manufacturer.

Neither the endpoints nor any values of the ranges disclosed herein are limited to such precise ranges or values, and these ranges or values are understood to include values approaching these ranges or values. For numerical ranges, the individual range endpoints, the individual range endpoints or individual point values, and the individual point values may be combined with each other to create one or more new numerical ranges.

It should be noted that the term "and/or" or "/" used in this article is only an association relationship describing associated objects, which means that there can be three relationships, for example, A and/or B, which can mean: Exist alone A, A and B exist at the same time, and B exists alone. The singular forms "a", "said" and "the" used in the embodiments of this application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

In the description of the present application, the use of the terms "at least one of", "at least one of", "one or more of" or other similar terms to a list of items connected may mean that a listed Any combination of items. For example, if the items A, B are listed, the phrase "at least one of A, B" means A only; only B; or A and B. In another example, if the items A, B, C are listed, the phrase "at least one of A, B, C" means only A; or only B; only C; A and B (excluding C); A and C (excluding B); B and C (excluding A); or all of A, B, and C. Item A may contain a single element or multiple elements. Item B may contain a single element or multiple elements. Item C may contain a single element or multiple elements.

Those skilled in the art understand that, as mentioned in the background art, there are more or less defects in the existing methods for cleaning carrier plates, and there is still a need for improvement. For example, the carrier board is used as a carrier for carrying silicon wafers. During the coating process of silicon wafers, transparent conductive films such as ITO films will be attached to the surface of the carrier boards. Due to the good corrosion resistance of ITO films, it is difficult to clean them with acid. . In particular, each hole on the carrier plate is equipped with a silicon wafer jig for placing silicon wafers. After pickling, the silicon wafer jig needs to be sandblasted because the pickling is not clean. It is easy to cause deformation of the silicon chip fixture of the carrier board, which in turn leads to failures during the subsequent installation of silicon chips, which affects the use of the carrier board and also affects production efficiency. Therefore, how to make the cleaning effect of the carrier board more thorough and reduce or avoid the deformation of the carrier board caused by it has become an urgent problem to be solved in the industry.

Based on this, the technical solution of the embodiment of the present application provides a carrier plate cleaning method that can effectively avoid the deformation of the carrier plate and effectively improve the cleaning effect, which can improve the cleaning effect of the carrier plate cleaning method in the related art. The problem of causing the deformation of the carrier board can reduce the cost and improve the production efficiency. The description of the specific technical solution is referred to below.

Please refer to Fig. 1 and Fig. 2, in some embodiments of the present application, a method for cleaning a carrier plate is provided, the method comprising:

According to the technical solution provided by the embodiment of the present application, in order to avoid incomplete pickling or uncleanness of the carrier board, before the carrier board is used, the carrier board is firstly subjected to pre-coating treatment, that is, a pre-coating layer is formed on the surface of the carrier board, and then the The carrier board is normally used as a carrier for carrying silicon wafers; in this way, when the carrier board is pickled after use, the acid resistance of the pre-coating layer can be used to fully acidify the transparent conductive film such as ITO film and the pre-coating layer together. Washing off can eliminate the need for sand blasting, that is, the carrier board can be cleaned, which simplifies the process and improves the cleaning effect, especially avoiding the deformation of the carrier board.

Concretely, the cleaning method of the carrier board is to carry out pre-coating treatment to the carrier board first, so that the pre-coating layer is formed on the surface of the carrier board. When cleaning is not clean; after the pre-coating layer is formed on the carrier board, the silicon wafer can be installed on the carrier board, and the carrier board with the silicon wafer can be placed on the production line for normal use, that is, the carrier board is used as the silicon wafer The coating carrier coats the silicon wafer. After the carrier board is used for a period of time, a transparent conductive film will be formed on the surface of the carrier board. The silicon wafer can be taken out from the carrier board, and the carrier board can be taken out to pickle the carrier board. In this way, the acid-resistant property of the pre-coating layer on the carrier can be used to completely pickle the transparent conductive film on the carrier together with the pre-coating layer, which improves the pickling effect and can completely remove the pre-coating film on the surface of the carrier. layer and transparent conductive film, in some cases, sandblasting can no longer be done, so that problems such as deformation of the carrier, affecting subsequent use, and increasing costs can be avoided during sandblasting, and the transparent film deposited on the carrier can also be avoided. The uneven coating of the battery sheet caused by the peeling of the conductive film layer improves the quality of the carrier board and the yield of the production line. Furthermore, when the carrier board is used next time, pre-coating treatment can be performed again before use, so as to realize the recycling of the carrier board. Therefore, the embodiment of the present application effectively solves the problem that the cleaning method of the carrier plate in the prior art has poor cleaning effect and easily causes deformation of the carrier plate.

It should be noted that during the coating process, the material of the transparent conductive film formed on the carrier plate is the same as that of the transparent conductive film formed on the silicon wafer. According to different use requirements or process requirements, the transparent conductive film can have multiple Various types, including but not limited to ITO thin films. The embodiment of the present application has no restriction on the specific type of the transparent conductive film, and those skilled in the art can flexibly select it according to actual needs, as long as the purpose of the present application is not limited. In order to simplify and facilitate the description, the embodiment of the present application mainly takes the transparent conductive film as an ITO film well-known in the art as an example for illustration.

In some embodiments, the transparent conductive film is an ITO film.

In some embodiments, the material of the carrier plate can be metal or alloy or various steel materials. For example, the material of the carrier plate includes stainless steel or aluminum alloy or other materials.

According to the embodiment of the present application, before performing the pre-coating treatment on the carrier, a step of pre-cleaning the carrier may also be included. The pre-cleaning is to clean the carrier plate to remove dirt, impurities or slight damages on the surface of the carrier plate to facilitate the subsequent pre-coating process and facilitate the uniformity of the pre-coating film.

As shown in FIG. 2 , in some embodiments, the carrier 1 includes a carrier body 101 and a wafer holder 102 disposed on the carrier body 101 , and the wafer holder 102 is configured to accommodate silicon wafers. The hole position of sheet 2. Optionally, the carrier body 101 may include two support columns arranged relatively parallel, and the wafer clamp 102 is disposed between the two support columns, and the silicon wafer clamp 102 may be detachably connected to the two support columns respectively. . The wafer holder 102 is provided with one or more holes for accommodating the silicon wafer 2 , and the silicon wafer 2 can be placed in the holes to facilitate the coating process on the upper and lower surfaces of the silicon wafer.

In some embodiments, in step S100, the pre-coating process on the carrier board is the pre-coating process on the silicon chip holder, or the pre-coating process on the carrier board is the silicon chip card The tool and the carrier body are pre-coated.

Since the cleaning of the carrier board mainly has the problem that the ITO film on the silicon wafer fixture of the carrier board is difficult to clean and the silicon wafer fixture of the carrier board is easily deformed, therefore, when the carrier board is pre-coated, the silicon wafer can be treated separately. The wafer fixture is pre-coated to form a pre-coating layer on the surface of the silicon wafer fixture; of course, in order to simplify the process and facilitate operation, the entire carrier can also be pre-coated, that is, the carrier body and the silicon wafer fixture Both are pre-coated to form a pre-coated layer on the surface of the silicon wafer fixture and the carrier body.

Optionally, a pre-coated film layer is formed on both the upper surface and the lower surface of the carrier board, or a pre-coated film layer is formed on the upper surface or the lower surface of the carrier board. Specifically, the upper surface and the lower surface of the silicon wafer fixture are formed with a pre-coated film layer, or the upper surface or the lower surface of the silicon wafer fixture is formed with a pre-coated film layer; or, the upper surface and the lower surface of the silicon wafer fixture and Both the upper surface and the lower surface of the carrier body are formed with a pre-coated film layer, or the upper surface or the lower surface of the silicon wafer holder is formed with a pre-coated film layer, and the upper surface or the lower surface of the carrier body is formed with a pre-coated film layer.

In some embodiments, the preparation method of the pre-coating layer includes one or more of spray coating, sputter coating or evaporation coating. The pre-coating layer can be formed by sputtering such as magnetron sputtering or spraying or evaporation coating, or other methods known in the related art can also be used. Considering factors such as easy realization, convenient operation, and coating effect, sputtering, especially magnetron sputtering, is preferably used for pre-coating treatment.

In some embodiments, the sputtering coating includes a magnetron sputtering coating, and the pre-coating layer is formed by coating a metal or a metal oxide by a magnetron sputtering coating method. The carrier is pre-coated by magnetron sputtering, the carrier is sent into the coating chamber, and one or several layers of pre-coating are sputtered on the carrier. The specific operating conditions of the magnetron sputtering can be selected and set according to the actual situation. For example, the power of the magnetron sputtering coating equipment can be 0.1KW-50KW, and further can be 0.5KW-20KW. Specific operating conditions for sputtering are not limited.

The material of the pre-coating layer may be a metal oxide, and further may be a transition metal oxide, and the metal oxide or the transition metal oxide is not resistant to acid, that is, it is not resistant to the pickling solution. In some embodiments, the material of the pre-coating layer includes ZnO (zinc oxide), ZnSnOx (zinc tin oxide), SnO (tin oxide), ZnAlOx (zinc aluminum oxide) or AZO (zinc oxide or aluminum doped with aluminum Doped with zinc oxide) at least one. Specifically, the material of the pre-coating layer may be ZnO, ZnSnOx, SnO, _ZnAlOx , AZO, or a composite coating composed of any two or more of the above oxides. The value of the subscript x in the above oxide may be a conventional value applicable to the oxide, such as 1-4, etc., which is not limited in this embodiment.

The pre-coated film layer formed by using the above-mentioned oxides not only has the property of not being acid-resistant, but also is convenient for coating, and has good film layer bonding with carrier substrates such as stainless steel and ITO films, which can be achieved in acid When washing, the pre-coating layer and ITO film are washed off together to make the pickling more thorough.

When plating ZnO, ZnSnOx, SnO or ZnAlOx, Zn, ZnSn, Sn, ZnAl targets can be used for reactive magnetron sputtering respectively; while for AZO plating, the target can be used for magnetron sputtering or reactive magnetron sputtering with AZO targets Coating by sputtering.

In some embodiments, the material of the pre-coating layer is ZnO (zinc oxide).

In some embodiments, the material of the pre-coating layer is AZO (aluminum doped zinc oxide or aluminum doped zinc oxide).

The way that the material of the pre-coating layer is ZnO or AZO can make pickling ITO easier, because ZnO and AZO have better acid resistance.

In some embodiments, the thickness of the pre-coating layer is 5nm-100nm. Preferably, in some embodiments, the thickness of the pre-coating layer is 5nm-50nm. More preferably, in some embodiments, the thickness of the pre-coating layer is 5nm-30nm. Specifically, the thickness of the pre-coating layer may be 5nm, 8nm, 10nm, 12nm, 15nm, 20nm, 25nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm and so on.

According to the embodiment of the present application, the thickness of the pre-coating layer formed on the surface of the carrier may be 5nm-100nm. Considering factors such as cost, the thickness of the pre-coating layer is preferably 5nm-30nm. If the thickness of the pre-coating layer is too thin such as less than 5nm, the effect played is not good enough, that is, it is not easy to clean all the transparent conductive film and the pre-coating layer together when pickling; if the thickness of the pre-coating layer is too high If the thickness is greater than 100nm, higher conditions or longer reaction time are required in the subsequent cleaning process to remove it, and it is also a waste of pre-coating layer materials, and the cost is high. Therefore, controlling the thickness of the pre-coating layer within the above range can achieve a balance between effectively improving the cleaning effect of the carrier and facilitating removal or reducing costs in the subsequent pickling process.

According to the embodiment of the present application, in step S200, the carrier plate with the pre-coating layer is mainly used as the carrier for carrying the silicon chip, and the silicon chip is coated. During this process, the surface of the carrier plate will be formed with transparent conductive membrane. Wherein, the specific operation method and operating conditions of coating silicon wafers are not limited in the embodiment of the present application, and can refer to existing silicon wafer coating treatment methods, which will not be described in detail here.

In some embodiments, in step S300, the pickling is to use an acidic aqueous solution or an organic solution (which may be referred to as pickling solution for short) to clean the carrier plate. Specifically, the carrier board can be fully soaked in an acidic aqueous solution or organic solution for pickling, and the surface of the carrier board can be fully treated; and the cleaning method of the carrier board immersed in the pickling solution is simple to operate, easy to implement, and low cost. lower.

In some embodiments, the pickling temperature can be 25°C-45°C, and the pickling time can be 5min-60min; further, the pickling temperature is 25°C-35°C, and the pickling time is 10min-45min. Specifically, the pickling temperature can be, for example, 25°C, 26°C, 28°C, 30°C, 32°C, 34°C, 35°C, 38°C, 40°C, 45°C, etc., and the pickling time can be, for example, 5 minutes, 10min, 15min, 20min, 25min, 30min, 35min, 40min, 45min, 50min, 60min, etc.

According to the embodiment of the present application, when pickling the carrier board, the temperature of the pickling can be normal temperature, or can be slightly heated, which is easier to realize in the process. In order to achieve better cleaning effect, the cleaning time can be more than 10 minutes, more preferably more than 20 minutes. By adopting appropriate pickling temperature and pickling time, the transparent conductive film and pre-coating layer on the surface of the carrier board can be effectively removed, and damage to the carrier board can also be avoided to improve production efficiency.

Further, in order to make the pickling more uniform and easy to operate, a soaking method can be used, that is, the carrier board is soaked in acid solution for cleaning. Alternatively, in other embodiments, the acid solution may be uniformly sprayed on the carrier plate by means of spraying.

The specific types of the pickling solution used in the pickling process can be varied in order to meet the needs of improving the cleaning effect of the carrier board and avoiding the deformation of the carrier board. In order to optimize the cleaning effect of the carrier plate, in some embodiments, the acidic aqueous solution or organic solution includes at least one of nitric acid, sulfuric acid, hydrochloric acid, acetic acid or hydrofluoric acid. For example, an acidic aqueous solution or organic solution can be nitric acid, sulfuric acid, hydrochloric acid, acetic acid, hydrofluoric acid, or any two or more of the above acidic solutions in any ratio. mixture. Preferably, in some embodiments, the acidic aqueous or organic solution is nitric acid, sulfuric acid or hydrochloric acid, more preferably, nitric acid is used as the pickling solution.

It can be understood that the above-mentioned nitric acid, sulfuric acid or hydrochloric acid, etc. refer to the aqueous solution of each acidic substance, that is, nitric acid solution, sulfuric acid solution or hydrochloric acid solution, especially, dilute nitric acid solution and dilute sulfuric acid solution with lower concentration can be used during pickling. or dilute hydrochloric acid solution. For example, the pickling solution may be a dilute nitric acid solution, a dilute sulfuric acid solution or a dilute hydrochloric acid solution with a mass concentration of 0.1%-10%, preferably a dilute nitric acid solution with a mass concentration of 0.1%-10%.

In addition, in other embodiments, the acidic aqueous solution or organic solution is not limited to the ones listed above. In the case of meeting the needs of improving the cleaning effect of the carrier and avoiding deformation of the carrier, the acidic aqueous or organic solution The solution can also adopt other types, which will not be described in detail here.

In some embodiments, after step S300 is completed, a step of surface treatment of the carrier is further included to remove the residual pre-coating layer or transparent conductive film.

Optionally, the surface treatment may be sandblasting, or other treatment methods.

It should be understood that in some cases, after pickling, some parts of the surface of the carrier may not be pickled, that is, there may be a residual film on the surface of the carrier. The surface of this part is subjected to surface treatment such as sandblasting, so that the carrier board can be thoroughly cleaned. Of course, in other cases, the substrate can be completely cleaned by pickling, and no surface treatment is required in this case. That is, in the cleaning method of the carrier plate in the embodiment of the present application, the step of surface treatment is an optional operation rather than a necessary step.

As an example, the cleaning method of the carrier plate provided in the embodiment of the present application includes the following steps:

S100. Perform pre-coating treatment on the carrier, so that a pre-coating layer is formed on the surface of the carrier, and the material of the pre-coating layer includes metal oxides that are not acid-resistant; wherein the material of the carrier can be stainless steel or aluminum alloy; It includes a carrier body and a silicon chip holder arranged on the carrier body. The silicon chip holder is provided with a hole for accommodating the silicon chip, and the silicon chip can be placed in the hole; when performing pre-coating treatment, it can be The silicon wafer fixture is pre-coated, or both the silicon wafer fixture and the carrier body can be pre-coated.

The preparation method of the pre-coating layer includes one or more of spray coating, sputtering coating or evaporation coating. Preferably, the method of magnetron sputtering is used to pre-coat the carrier plate, and the carrier plate is sent into the coating chamber. Sputter one or several pre-coated layers. The material of the pre-coating layer includes at least one of ZnO, ZnSnO _x , SnO, ZnAlO _x or AZO, preferably ZnO or AZO. The thickness of the pre-coating layer is 5nm-100nm, preferably 5nm-30nm.

S200. Place the silicon wafer on the carrier plate obtained in step S100, and use the carrier plate as a silicon wafer coating carrier to perform coating treatment on the silicon wafer. After the coating treatment, a transparent conductive film is formed on the surface of the carrier plate; wherein the transparent conductive film is ITO film.

For example, when performing pre-coating treatment, perform pre-coating treatment on silicon wafer fixtures. Install the pre-coated silicon chip fixture on the carrier body, and put the installed carrier on the production line for normal use. As a carrier for silicon wafer coating, after a long period of use, the surface of the carrier will be coated with a thicker ITO film, which needs to be pickled.

S300. Pickling the carrier board in step S200 to remove the pre-coated film layer and the transparent conductive film on the surface of the carrier board. Pickling is to use an acidic aqueous solution or an organic solution to clean the carrier board. Specifically, the carrier board can be completely soaked in the acidic aqueous solution or organic solution for pickling. The pickling temperature can be 25°C-45°C, and the pickling time can be 5min-60min. The acidic aqueous or organic solution includes at least one of nitric acid, sulfuric acid, hydrochloric acid, acetic acid or hydrofluoric acid, preferably nitric acid is used as the pickling solution.

After pickling, if the surface of some part of the carrier plate has not been pickled clean, surface treatment such as sand blasting can be performed on the surface of this part of the carrier plate.

Due to the high processing precision of the silicon wafer fixtures, sandblasting will cause some of the silicon wafer fixtures to deform, resulting in the silicon wafers not being placed in the correct position and affecting the coating. However, in the embodiment of the present application, by pre-coating a film layer that is easy to be corroded by acid, that is, a pre-coating film layer, on the silicon wafer fixture, the pickling can be done thoroughly, and sandblasting can be avoided.

In some embodiments, the embodiment of the present application also provides an application of the method for cleaning the carrier as described above in the production of photovoltaic cells. The carrier plate is used as a tool for carrying silicon wafers in the process of preparing photovoltaic cells.

The method for cleaning the carrier provided in the embodiment of the present application utilizes the non-acid resistance of the pre-coating layer to thoroughly clean the ITO film on the carrier, such as the silicon wafer fixture of the carrier, without sandblasting, thereby avoiding The deformation of the wafer fixture of the carrier. That is, the method of the present application not only has an excellent cleaning effect on the carrier, but can completely remove the ITO film on the surface of the carrier, and will not cause deformation of the carrier, can realize the repeated use of the carrier, and is conducive to reducing production costs ,Increase productivity.

The parts not described in detail in this application are well-known technologies for those skilled in the art.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, rather than limiting them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present application.

Claims

A method for cleaning a carrier plate, characterized in that the method comprises:

S100, performing pre-coating treatment on the carrier, so that a pre-coating layer is formed on the surface of the carrier, and the material of the pre-coating layer includes an acid-resistant metal oxide;

S200, placing the silicon wafer in the carrier plate obtained in step S100, using the carrier plate as a silicon wafer coating carrier to perform coating treatment on the silicon wafer, after the coating treatment, a transparent conductive film is formed on the surface of the carrier plate;

S300. Pickling the carrier board in step S200 to remove the pre-coated film layer and the transparent conductive film on the surface of the carrier board.
The method for cleaning a carrier according to claim 1, wherein the carrier includes a carrier body and a wafer holder provided on the carrier body, and the silicon wafer holder is provided with a The hole position of the sheet;

In step S100, the pre-coating treatment on the carrier is to perform the pre-coating treatment on the silicon wafer holder, or the pre-coating treatment on the carrier is to perform the pre-coating treatment on the silicon wafer holder and the carrier board The body is pre-coated.
The method for cleaning a carrier according to claim 2, wherein the carrier body includes two support columns arranged relatively in parallel, and the wafer clamp is arranged between the two support columns; The wafer fixtures are detachably connected to the two support columns respectively.
The cleaning method of the carrier according to claim 1, characterized in that, the preparation method of the pre-coating layer comprises one or more of spray coating, sputter coating or evaporation coating.
The cleaning method of the carrier plate according to claim 4, wherein the sputtering coating comprises magnetron sputtering coating, and the pre-coating layer is formed by coating metal or metal oxide by the magnetron sputtering coating method .
The method for cleaning a carrier according to claim 1, wherein the material of the pre-coating layer comprises at least one of ZnO, ZnSnO x , SnO, ZnAlO x or AZO.
The method for cleaning a carrier according to claim 6, characterized in that the material of the pre-coating layer is ZnO or AZO.
The cleaning method of the carrier plate according to claim 1, characterized in that, the thickness of the pre-coated film layer is 5nm-100nm.
The cleaning method of the carrier plate according to claim 8, characterized in that, the thickness of the pre-coated film layer is 5nm-30nm.
The method for cleaning a carrier according to claim 1, wherein the transparent conductive film comprises an ITO film.
The method for cleaning a carrier according to claim 1, wherein the material of the carrier includes metal or alloy.
The method for cleaning the carrier according to any one of claims 1-11, characterized in that the pickling is to use an acidic aqueous solution or an organic solution to clean the carrier.
The cleaning method of the carrier plate according to claim 12, characterized in that, the pickling temperature is 25°C-45°C, and the pickling time is 5min-60min.
The method for clearing a carrier plate according to claim 12, wherein the acidic aqueous solution or organic solution includes at least one of nitric acid, sulfuric acid, hydrochloric acid, acetic acid or hydrofluoric acid.
The cleaning method of the carrier according to any one of claims 1-11, characterized in that, after the step S300 is finished, it further comprises a step of surface treating the carrier to remove the residual pre-coating layer or transparent conductive film.
The method for cleaning the carrier according to any one of claims 1-11, characterized in that, before step S100, a step of pre-cleaning the carrier is also included.
The application of the cleaning method of the carrier plate according to any one of claims 1-16 in the production of photovoltaic cells.
The application according to claim 17, characterized in that the carrier plate is used as a tool for carrying silicon wafers in the process of manufacturing photovoltaic cells.