CN114220877A - 基于近红外光电探测器与oled的上转换器件及其制备方法 - Google Patents
基于近红外光电探测器与oled的上转换器件及其制备方法 Download PDFInfo
- Publication number
- CN114220877A CN114220877A CN202111426363.8A CN202111426363A CN114220877A CN 114220877 A CN114220877 A CN 114220877A CN 202111426363 A CN202111426363 A CN 202111426363A CN 114220877 A CN114220877 A CN 114220877A
- Authority
- CN
- China
- Prior art keywords
- inalas
- layer
- ingaas
- photoelectric detector
- near infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000010521 absorption reaction Methods 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000009413 insulation Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 29
- 230000000903 blocking effect Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 9
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 claims description 8
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 claims description 8
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 230000005525 hole transport Effects 0.000 claims description 6
- 238000013329 compounding Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 23
- 239000000243 solution Substances 0.000 description 9
- 238000001514 detection method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明公开了一种p‑InAlAs/i‑InGaAs/n‑InAlAs近红外光电探测器，其特征在于，包括：InP基底、位于InP基底上的n型InAlAs底电极接触层、位于底电极接触层上的i型InGaAs吸收层、位于吸收层上的p型InAlAs接触层以及氮化硅绝缘层。本发明还公开了一种基于近红外光电探测器与OLED的上转换器件，包括所述的p‑InAlAs/i‑InGaAs/n‑InAlAs近红外光电探测器以及形成于p型InAlAs接触层上的OLED器件，所述InP基底的背面设有底电极。本发明的基于近红外光电探测器与OLED的上转换器件，提升了近红外光电探测器的响应率，同时实现了InAlAs材料与OLED结构的集成问题，实现红外光‑可见光的转换功能。
Description
技术领域
本发明涉及近红外光电探测技术领域，尤其涉及一种基于近红外光电探测器与OLED的上转换器件及其制备方法。
背景技术
短波红外波段较少被空气中水分子吸收，透过率达到90％，被称为“红外大气窗口”，所以短波红外探测和成像在军事和民用领域都具有非常重要的应用。而常见的CCD和CMOS传感器件却不能探测大于1微米的红外波段，因此一般采用带隙宽度较小的III-V族化合物半导体来探测红外线。InGaAs、InAlAs材料是直接带隙半导体，电子迁移率高，与InP的晶格匹配，可以得到高质量的外延片。形成的PIN型InGaAs/InP、InGaAs/InAlAs红外光电探测器灵敏度高，暗电流小，可在室温下工作。
通过线性上转换成像方案，将近红外光电探测器与有机发光二极管(OLED)串联集成起来，使近红外图像上转换为可见光波段图像，从而可以直接被人眼或者普通相机获取。目前已有很多关于红外探测器/发光二极管集成结构器件的文献报道，如：通过集成无机红外探测器与无机LED结构形成红外上转换器件，通过有机红外探测器与有机LED结构形成红外上转换器件等。
对于无机红外探测器与无机发光二极管集成的红外上转换器件，需要用分子束外延方式生长III-V族材料，有晶格匹配的要求，随后制备的几种砷化镓基上转化器的转换波长不能到达可见光波段。
对于有机红外探测器与有机LED结构形成红外上转换器件，其最大特点是不依赖于基底材料的性质，没有晶格匹配的生长要求。但是其缺点是：目前的有机小分子和聚合物都不能探测波长大于1微米的近红外光。
发明内容
本发明的目的在于提供一种能够实现1.5微米红外光至可见光转换的上转换器件。
本发明第一方面提供了p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器，包括：InP基底、位于所述InP基底上的n型InAlAs底电极接触层、位于所述底电极接触层上的i型InGaAs吸收层、位于所述吸收层上的p型InAlAs接触层以及氮化硅绝缘层。
进一步地，所述n型InAlAs底电极接触层的厚度为500～800nm，掺杂浓度为1～5×1018cm-3；所述i型InGaAs吸收层的厚度为1000～2000nm；所述p型InAlAs接触层的厚度为300～500nm，掺杂浓度为1～5×1018cm-3。
本发明第二方面提供了所述的p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器的制备方法，包括以下步骤：
提供一p-InAlAs/i-InGaAs/n-InAlAs外延片；
对所述p-InAlAs/i-InGaAs/n-InAlAs外延片进行光刻，并将光刻后的外延片浸入刻蚀液中进行刻蚀；
在刻蚀后的外延片上形成一氮化硅绝缘层；
对所述外延片进行二次光刻，并对二次光刻后的外延片进行刻蚀以形成台阶结构，从而得到所述p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器。
进一步地，将光刻后的外延片浸入刻蚀液中进行刻蚀的具体方法为：
先将外延片浸入由H2SO4、H2O2和H2O组成的刻蚀液中刻蚀，以刻蚀InAlAs层；
再将外延片浸入由H3PO4、H2O2和H2O组成的刻蚀液中刻蚀，以刻蚀InGaAs。
进一步地，所述p-InAlAs/i-InGaAs/n-InAlAs外延片在进行刻蚀前，依次采用丙酮和异丙醇进行清洗以去除表面的金属离子和氧化物。
本发明第三方面提供了一种基于近红外光电探测器与OLED的上转换器件，包括所述的p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器，其中，所述p型InAlAs接触层上形成有OLED器件，所述InP基底的背面设有底电极。
进一步地，所述OLED器件自下而上依次包括空穴传输层、电子阻挡层、有机发光层、空穴阻挡层和顶电极；
其中，所述空穴传输层为NPB层；
所述电子阻挡层为TCTA层；
所述有机发光层为CBP/Ir(ppy)3复合掺杂层；
所述空穴阻挡层为TPBi层；
所述顶电极为Ca/Ag复合电极。
本发明第四方面还提供了所述的基于近红外光电探测器与OLED的上转换器件的制备方法，包括以下步骤：
提供p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器；
通过磁控溅射的方法在所述近红外光电探测器的InP基底背面淀积底电极；
在所述近红外光电探测器的p型InAlAs接触层上依次生长NPB层、TCTA层、CBP/Ir(ppy)3复合掺杂层、TPBi层和Ca/Ag复合电极，得到由所述p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器与OLED器件集成的上转换器件。
进一步地，所述底电极为Ti/Pt/Au电极。
进一步地，所述CBP/Ir(ppy)3复合掺杂层中，Ir(ppy)3的掺杂比例为6～8％。
本发明的上述技术方案相比现有技术具有以下优点：
1.本发明提出了一种新型的p-InAlAs/i-InGaAs/n-InAlAs结构的近红外光电探测器，通过对每层厚度和掺杂浓度的优化，增加了探测器对近红外光的响应率，提升了红外探测性能。
2.本发明提出了一种基于p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器与OLED的上转换器件，解决了InAlAs材料与OLED结构的集成问题，具备了红外光-可见光的转换功能，可以实现1.5微米红外光至可见光的转换。
附图说明
附图1是p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器的结构示意图；
附图2是基于近红外光电探测器与OLED的上转换器件的结构示意图；
附图3为实施例1中的p-InAlAs/i-InGaAs/n-InAlAs探测器件I-V图；
附图4为实施例2中的上转换器件在外加1500nm红外光下发光时的工作图。
具体实施方式
下面结合具体附图和实施例对本发明作进一步说明，以使本领域的技术人员可以更好地理解本发明并能予以实施，但所举实施例不作为对本发明的限定。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
本发明提供了一种p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器，该近红外光电探测器可以吸收1.5微米以内的近红外光，提升了红外探测性能。
请参见图1，根据发明的一个实施例，该近红外光电探测器包括：InP基底、位于InP基底上的n型InAlAs底电极接触层、位于底电极接触层上的i型InGaAs吸收层、位于吸收层上的p型InAlAs接触层以及氮化硅绝缘层。本实施例中，所述n型InAlAs底电极接触层的厚度为500nm，掺杂浓度为1×1018cm-3；所述i型InGaAs吸收层的厚度为2000nm；所述p型InAlAs接触层的厚度为300nm，掺杂浓度为1×1018cm-3。通过对每层厚度和掺杂的优化，增加了探测器对近红外光的响应率。
此外，本发明还提供了上述p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器与OLED器件集成的上转换器件，可以实现近红外光到可见光的转换。其中，p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器主要用于近红外光的吸收，可以吸收1.5微米以内的短波红外光。OLED器件复合在p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器上，其可以将近红外光电探测器吸收的红外光以可见光的形式上转换成像。
上述基于近红外光电探测器与OLED的上转换器件的结构包括p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器，其中，所述近红外光电探测器的p型InAlAs接触层上形成有OLED器件，InP基底的背面设有底电极。
请参见图2，根据本发明的一个实施例，OLED器件自下而上依次包括空穴传输层、电子阻挡层、有机发光层、空穴阻挡层和顶电极；其中，所述空穴传输层可以采用NPB层，其可以将红外探测器中的空穴在外加偏压的作用下传送到OLED器件中。所述电子阻挡层可以采用TCTA层，TCTA作为电子阻挡层，可以阻挡有机发光层的电子，保证空穴和电子可以在有机发光层中有效复合。所述有机发光层可以采用CBP/Ir(ppy)3复合掺杂层，所述空穴阻挡层可以为TPBi层，其可以防止空穴向上传输，提高发光层发光效率。所述顶电极可以为Ca/Ag复合电极，Ca的引入可以提高电子注入的效率，不仅降低了器件的启亮电压，而且提升了发光效率。在一优选的实施例中，所述NPB层的厚度为50nm，TCTA层的厚度为20nm；CBP/Ir(ppy)3复合掺杂层的厚度为30nm，Ir(ppy)3的掺杂比例为8％；TPBi层的厚度为40nm。
本发明还提供了所述的基于近红外光电探测器与OLED的上转换器件的制备方法，包括以下步骤：
S1.提供一p-InAlAs/i-InGaAs/n-InAlAs外延片；
S2.对所述p-InAlAs/i-InGaAs/n-InAlAs外延片进行光刻，并将光刻后的外延片浸入刻蚀液中进行刻蚀；
S3.在刻蚀后的外延片上形成一氮化硅绝缘层；
S4.通过磁控溅射的方法在InP基底的背面淀积底电极；
S5.对所述外延片进行二次光刻，并对二次光刻后的外延片进行刻蚀以形成台阶结构，得到PIN型的p-InAlAs/i-InGaAs/n-InAlAs器件；
S6.在得到的p-InAlAs/i-InGaAs/n-InAlAs器件上生长OLED器件，得到所述基于近红外光电探测器与OLED的上转换器件。
本发明中，所述外延片的结构为InP基底/p-InAlAs/i-InGaAs/n-InAlAs。
在一实施例中，步骤S1中外延片在进行刻蚀前，依次采用丙酮和异丙醇进行清洗，以去除表面的金属离子和氧化物。
在一实施例中，步骤S2中将光刻后的外延片浸入刻蚀液中进行刻蚀的具体方法为：先将外延片浸入由H2SO4、H2O2和H2O组成的刻蚀液中刻蚀，以刻蚀InAlAs层；再将外延片浸入由H3PO4、H2O2和H2O组成的刻蚀液中刻蚀，以刻蚀InGaAs。
在一实施例中，步骤S3中采用等离子体增强化学的气相沉积法(PECVD)在外延片上形成氮化硅绝缘层(SiNx)，其厚度优选为250nm。
在一实施例中，步骤S4中的底电极为Ti/Pt/Au电极，各层的厚度依次优选为20nm、30nm和150nm。
实施例1
请参见图1，本实施例提供了一种p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器结构，其各层依次为：n型In0.52Al0.48As底电极接触层，厚度为500nm，掺杂浓度为1×1018cm-3；i型In0.53Ga0.47As吸收层，厚度为2000nm；p型In0.52Al0.48As接触层，厚度为300nm，掺杂浓度为1×1018cm-3。
图3为实施例1的器件在15mW/cm2入射光功率下的I-V曲线。
从图中可以看到，器件的暗电流很小，在0.5V偏压下为4.04×10-6A/cm2；当外加功率为15mW/cm2时，光电流密度为1.35×10-2A/cm2，响应度达到0.9A/W。暗电流与同类器件相比降低了一个数量级，响应度增加了0.4A/W左右。
实施例2
请参见图2，本实施例提供了一种基于近红外光电探测器与OLED的上转换器件，其是基于实施例1的p-InAlAs/i-InGaAs/n-InAlAs上生长OLED器件得到的。其中，OLED器件中，NPB层的厚度为50nm，TCTA层的厚度为20nm；CBP/Ir(ppy)3复合掺杂层的厚度为30nm，Ir(ppy)3的掺杂比例为8％；TPBi层的厚度为40nm。
图4为p-InAlAs/i-InGaAs/n-InAlAs探测器与OLED集成上转换器件在1550nm红外光的照射下器件发光时的效果图。
从图中可以看出，以1550nm红外光作为入射光，可以看到很好的绿色发光效果。因此，该上转换器件成功地实现了将1550nm的红外光转换成520nm左右的可见绿光。与现有的器件相比，本发明的上转换器件显著拓宽了吸收近红外光的波长范围，使其可以吸收波长为1.5微米以内的红外光。
显然，上述实施例仅仅是为清楚地说明所作的举例，并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。
Claims (10)
1.一种p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器，其特征在于，包括：InP基底、位于所述InP基底上的n型InAlAs底电极接触层、位于所述底电极接触层上的i型InGaAs吸收层、位于所述吸收层上的p型InAlAs接触层以及氮化硅绝缘层。
2.根据权利要求1所述的p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器，其特征在于，所述n型InAlAs底电极接触层的厚度为500～800nm，掺杂浓度为1～5×1018cm-3；所述i型InGaAs吸收层的厚度为1000～2000nm；所述p型InAlAs接触层的厚度为300～500nm，掺杂浓度为1～5×1018cm-3。
3.根据权利要求1或2所述的p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器的制备方法，其特征在于，包括以下步骤：
提供一p-InAlAs/i-InGaAs/n-InAlAs外延片；
对所述p-InAlAs/i-InGaAs/n-InAlAs外延片进行光刻，并将光刻后的外延片浸入刻蚀液中进行刻蚀；
在刻蚀后的外延片上形成一氮化硅绝缘层；
对所述外延片进行二次光刻，并对二次光刻后的外延片进行刻蚀以形成台阶结构，从而得到所述p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器。
4.根据权利要求3所述的p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器的制备方法，其特征在于，将光刻后的外延片浸入刻蚀液中进行刻蚀的具体方法为：
先将外延片浸入由H2SO4、H2O2和H2O组成的刻蚀液中刻蚀，以刻蚀InAlAs层；
再将外延片浸入由H3PO4、H2O2和H2O组成的刻蚀液中刻蚀，以刻蚀InGaAs。
5.根据权利要求3所述的p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器的制备方法，其特征在于，所述p-InAlAs/i-InGaAs/n-InAlAs外延片在进行刻蚀前，依次采用丙酮和异丙醇进行清洗以去除表面的金属离子和氧化物。
6.一种基于近红外光电探测器与OLED的上转换器件，其特征在于，包括权利要求1或2所述的p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器，所述p型InAlAs接触层上形成有OLED器件，所述InP基底的背面设有底电极。
7.根据权利要求6所述的基于近红外光电探测器与OLED的上转换器件，其特征在于，所述OLED器件自下而上依次包括空穴传输层、电子阻挡层、有机发光层、空穴阻挡层和顶电极；
其中，所述空穴传输层为NPB层；
所述电子阻挡层为TCTA层；
所述有机发光层为CBP/Ir(ppy)3复合掺杂层；
所述空穴阻挡层为TPBi层；
所述顶电极为Ca/Ag复合电极。
8.根据权利要求7所述的基于近红外光电探测器与OLED的上转换器件的制备方法，其特征在于，包括以下步骤：
提供p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器；
通过磁控溅射的方法在所述近红外光电探测器的InP基底背面淀积底电极；
在所述近红外光电探测器的p型InAlAs接触层上依次生长NPB层、TCTA层、CBP/Ir(ppy)3复合掺杂层、TPBi层和Ca/Ag复合电极，得到由所述p-InAlAs/i-InGaAs/n-InAlAs近红外光电探测器与OLED器件集成的上转换器件。
9.根据权利要求8所述的基于近红外光电探测器与OLED的上转换器件的制备方法，其特征在于，所述底电极为Ti/Pt/Au电极。
10.根据权利要求8所述的基于近红外光电探测器与OLED的上转换器件的制备方法，其特征在于，所述CBP/Ir(ppy)3复合掺杂层中，Ir(ppy)3的掺杂比例为6～8％。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111426363.8A CN114220877A (zh) | 2021-11-27 | 2021-11-27 | 基于近红外光电探测器与oled的上转换器件及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111426363.8A CN114220877A (zh) | 2021-11-27 | 2021-11-27 | 基于近红外光电探测器与oled的上转换器件及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114220877A true CN114220877A (zh) | 2022-03-22 |
Family
ID=80698626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111426363.8A Pending CN114220877A (zh) | 2021-11-27 | 2021-11-27 | 基于近红外光电探测器与oled的上转换器件及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114220877A (zh) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652435A (en) * | 1995-09-01 | 1997-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical structure schottky diode optical detector |
| US20050012030A1 (en) * | 2003-07-16 | 2005-01-20 | Triquint Semiconductor, Inc. | Increased responsivity photodetector |
| CN101546789A (zh) * | 2008-03-28 | 2009-09-30 | Jds尤尼弗思公司 | 半导体光电二极管及其制造方法 |
| US20100019275A1 (en) * | 2007-01-22 | 2010-01-28 | Nec Corporation | Semiconductor photo detector |
| CN101976696A (zh) * | 2010-09-26 | 2011-02-16 | 中国科学院上海微系统与信息技术研究所 | 用于拓展In0.53Ga0.47As探测器及其阵列短波响应的材料体系及其制备 |
| US8299497B1 (en) * | 2010-06-30 | 2012-10-30 | Sandia Corporation | Near-infrared photodetector with reduced dark current |
| CN108807588A (zh) * | 2018-06-15 | 2018-11-13 | 杭州国翌科技有限公司 | 单片式n-i-p-i-n型宽光谱光电探测器 |
| JP2019197794A (ja) * | 2018-05-09 | 2019-11-14 | 住友電工デバイス・イノベーション株式会社 | 光導波路型受光素子 |
| CN110649083A (zh) * | 2019-10-10 | 2020-01-03 | 苏州英凡瑞得光电技术有限公司 | 实现近红外到可见光转换的上转换器件及其制备方法 |
-
2021
- 2021-11-27 CN CN202111426363.8A patent/CN114220877A/zh active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652435A (en) * | 1995-09-01 | 1997-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical structure schottky diode optical detector |
| US20050012030A1 (en) * | 2003-07-16 | 2005-01-20 | Triquint Semiconductor, Inc. | Increased responsivity photodetector |
| US20100019275A1 (en) * | 2007-01-22 | 2010-01-28 | Nec Corporation | Semiconductor photo detector |
| CN101546789A (zh) * | 2008-03-28 | 2009-09-30 | Jds尤尼弗思公司 | 半导体光电二极管及其制造方法 |
| US8299497B1 (en) * | 2010-06-30 | 2012-10-30 | Sandia Corporation | Near-infrared photodetector with reduced dark current |
| CN101976696A (zh) * | 2010-09-26 | 2011-02-16 | 中国科学院上海微系统与信息技术研究所 | 用于拓展In0.53Ga0.47As探测器及其阵列短波响应的材料体系及其制备 |
| JP2019197794A (ja) * | 2018-05-09 | 2019-11-14 | 住友電工デバイス・イノベーション株式会社 | 光導波路型受光素子 |
| CN108807588A (zh) * | 2018-06-15 | 2018-11-13 | 杭州国翌科技有限公司 | 单片式n-i-p-i-n型宽光谱光电探测器 |
| CN110649083A (zh) * | 2019-10-10 | 2020-01-03 | 苏州英凡瑞得光电技术有限公司 | 实现近红外到可见光转换的上转换器件及其制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Shur et al. | GaN/AIGaN heterostructure devices: photodetectors and field-effect transistors | |
| CN105720130B (zh) | 基于量子阱带间跃迁的光电探测器 | |
| CN103165727B (zh) | N型注入的红外至可见波长上转换装置及其制备方法 | |
| US9082922B2 (en) | Organic/inorganic hybrid optical amplifier with wavelength conversion | |
| JP4977695B2 (ja) | 紫外受光素子 | |
| CN108305911B (zh) | 吸收、倍增层分离结构的ⅲ族氮化物半导体雪崩光电探测器 | |
| Shao et al. | Significant performance improvement in AlGaN solar-blind avalanche photodiodes by exploiting the built-in polarization electric field | |
| CN108231926B (zh) | 一种红外探测器及其制备方法 | |
| JP5063929B2 (ja) | 赤外線センサ | |
| CN110047955B (zh) | 一种AlGaN紫外雪崩光电二极管探测器及其制备方法 | |
| CN109285914B (zh) | 一种AlGaN基紫外异质结光电晶体管探测器及其制备方法 | |
| CN106409968A (zh) | AlGaN基超晶格雪崩型紫外探测器及其制备方法 | |
| CN101271933A (zh) | 量子点-阱红外探测器的结构及其制备方法 | |
| CN109686809A (zh) | 一种iii族氮化物半导体可见光雪崩光电探测器及制备方法 | |
| US20150034159A1 (en) | Hole-blocking TiO2/Silicon Heterojunction for Silicon Photovoltaics | |
| SHI et al. | Progress on nBn infrared detectors | |
| US20220372651A1 (en) | Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device | |
| Chen et al. | Ultrahigh Responsivity β-Ga 2 O 3/BP Junction Field Effect Phototransistors for UV/IR Dual-Band Detection | |
| CN109148638B (zh) | 红外探测器及其制备方法 | |
| CN114220877A (zh) | 基于近红外光电探测器与oled的上转换器件及其制备方法 | |
| CN111739963B (zh) | 一种硅基宽光谱光电探测器的制备方法 | |
| Li et al. | Ultrahigh Sensitive Phototransistor Based on MoSe $ _ {\text {2}} $/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection | |
| JP6813690B2 (ja) | アバランシェフォトダイオードおよびその製造方法 | |
| Razeghi et al. | AlGaN ultraviolet detectors | |
| CN110828603B (zh) | 基于III-V族材料发射极区的GeSn光电晶体管及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220322 |