CN114213121A - 高压电、高介电、高居里压电陶瓷片 - Google Patents

高压电、高介电、高居里压电陶瓷片 Download PDF

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CN114213121A
CN114213121A CN202111474577.2A CN202111474577A CN114213121A CN 114213121 A CN114213121 A CN 114213121A CN 202111474577 A CN202111474577 A CN 202111474577A CN 114213121 A CN114213121 A CN 114213121A
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ceramic chip
grinding material
heating
preserving heat
piezoelectric ceramic
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何婧
李慧琴
褚涛
高智红
王兰花
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Guizhou Zhenhua Hongyun Electronics Co ltd
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Abstract

本发明公开了一种高压电、高介电、高居里压电陶瓷片，属于压电陶瓷芯片；其组分式为Pb0.99Lay(Zr0.49Ti0.51)0.98‑x(Mg1/2W1/2)0.02(Ni1/ 3Nb2/3)xO3，x＝0.12、y＝0.01；其制备方法是按所述组分式配料，然后球磨、预烧、二次球磨、压片成型、排胶烧结、印银、极化。本发明陶瓷片Tc＝280℃、d33≥600pC/N、Kp≥0.75、ε≥2500、tanδ≤1.8％，本发明具有制备工艺简单、成本低、易于批量生产等优点，是一种适用于压电换能器的压电陶瓷材料。

Description

高压电、高介电、高居里压电陶瓷片
技术领域
本发明涉及一种压电陶瓷片，尤其涉及一种高压电、高介电、高居里压电陶瓷芯片；属于压电陶瓷技术领域。
背景技术
在PZT陶瓷基础上掺杂La3+在A原子位置取代部分Pb2+，可提高PZT陶瓷的介电、压电及铁电等各方面性能。由于PLZT压电陶瓷具有高的压电常数和介电常数，大的机械耦合系数，因此在超声马达、致动器、水听器以及各种压电电声器件等领域有着极其广泛的运用前景。
随着高新技术的不断发展，为了获取较大的能量转换效率，对压电材料的压电应变常数、机电耦合系数等压电性能提出了更高的要求；因此亟待开发一种高压电应变常数、较高耦合系数、高居里温度、适用于压电换能器的压电陶瓷材料。
发明内容
针对现有技术中存在的上述缺陷，本发明旨在提供一种高压电、高介电、高居里压电陶瓷片。
为了实现上述目的，本发明采用以下技术方案：按组分式Pb0.99Lay(Zr0.49Ti0.51)0.98-x(Mg1/2W1/2)0.02(Ni1/3Nb2/3)xO3，x＝0.12、y＝0.01的化学计量比称取原料氧化物Pb3O4、ZrO2、TiO2、NiO、Nb2O5、La2O3、WO3、MgO进行配料；其制备步骤如下：
1)将上述原料氧化物混合，球磨、烘干，得平均粒径为2μm的一次磨料；
2)将所述一次磨料加热至850℃、保温2h，随炉冷却，得瓷粉；
3)将所述瓷粉球磨，烘干，得平均粒径为0.74μm的二次磨料；
4)所述二次磨料中加入浓度为4％的PVA，混匀、造粒、压片成型，得生坯，PVA的添加量为4wt％；
5)将所述生坯加热至600℃、排胶1h，然后升温至1220℃、保温2小时，随炉冷却，得瓷片；
6)所述瓷片表面印刷银浆，然后在750℃的条件下保温时间20min；
7)将经过烧银处理的瓷片置于90℃的二甲基硅油中极化25min，极化电场强度为2.5KV/mm。
与现有技术比较，本发明压电陶瓷芯片的Tc＝280℃、d33≥600pC/N、Kp≥0.75、ε≥2500、tanδ≤1.8％，本发明具有制备工艺简单、成本低、易于批量生产等优点，是一种适用于压电换能器的压电陶瓷材料。
具体实施方式
下面结合具体的实施例对本发明作进一步说明：
实施例1
1)按组分式Pb0.99Lay(Zr0.49Ti0.51)0.98-x(Mg1/2W1/2)0.02(Ni1/3Nb2/3)xO3，x＝0.12、y＝0.01称取原料氧化物68.32mol％的Pb3O4、15.68mol％的ZrO2、10.57mol％的TiO2、0.9mol％的NiO、3.21mol％的Nb2O5、0.49mol％的La2O3、0.7mol％的WO3、0.12wt.％的MgO；
2)将上述原料氧化物混合，球磨、烘干，得平均粒径为2μm的一次磨料；
3)将所述一次磨料加热至850℃、保温2h，随炉冷却，得瓷粉；
4)将所述瓷粉球磨，烘干，得平均粒径为0.74μm的二次磨料；
5)所述二次磨料中加入浓度为4％的PVA，混匀、造粒、压片成型，得生坯，PVA的添加量为4wt％；
6)将所述生坯加热至600℃、排胶1h，然后升温至1220℃、保温2小时，随炉冷却，得瓷片；
7)所述瓷片表面印刷银浆，然后在750℃的条件下保温时间20min；
8)将经过烧银处理的瓷片置于90℃的二甲基硅油中极化25min，极化电场强度为2.5KV/mm。

Claims (1)

1.一种高压电、高介电、高居里压电陶瓷片，其特征在于按组分式Pb0.99Lay(Zr0.49Ti0.51)0.98-x(Mg1/2W1/2)0.02(Ni1/3Nb2/3)xO3，x＝0.12、y＝0.01的化学计量比称取原料氧化物Pb3O4、ZrO2、TiO2、NiO、Nb2O5、La2O3、WO3、MgO进行配料，制备步骤如下：
1)将上述原料氧化物混合，球磨、烘干，得平均粒径为2μm的一次磨料；
2)将所述一次磨料加热至850℃、保温2h，随炉冷却，得瓷粉；
3)将所述瓷粉球磨，烘干，得平均粒径为0.74μm的二次磨料；
4)所述二次磨料中加入浓度为4％的PVA，混匀、造粒、压片成型，得生坯，PVA的添加量为4wt％；
5)将所述生坯加热至600℃、排胶1h，然后升温至1220℃、保温2小时，随炉冷却，得瓷片；
6)所述瓷片表面印刷银浆，然后在750℃的条件下保温时间20min；
7)将经过烧银处理的瓷片置于90℃的二甲基硅油中极化25min，极化电场强度为2.5KV/mm。
CN202111474577.2A 2021-12-06 2021-12-06 高压电、高介电、高居里压电陶瓷片 Pending CN114213121A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115490512A (zh) * 2022-09-19 2022-12-20 大富科技(安徽)股份有限公司 5g微波介质陶瓷材料及其制备方法、微波介质陶瓷器件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115490512A (zh) * 2022-09-19 2022-12-20 大富科技(安徽)股份有限公司 5g微波介质陶瓷材料及其制备方法、微波介质陶瓷器件
CN115490512B (zh) * 2022-09-19 2023-10-20 大富科技(安徽)股份有限公司 5g微波介质陶瓷材料及其制备方法、微波介质陶瓷器件

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