CN114200784A - Maskless laser direct-writing photoetching scanning method capable of improving resolution - Google Patents
Maskless laser direct-writing photoetching scanning method capable of improving resolution Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000001259 photo etching Methods 0.000 title abstract description 9
- 238000001459 lithography Methods 0.000 claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 230000006798 recombination Effects 0.000 claims description 26
- 238000005215 recombination Methods 0.000 claims description 26
- 238000006073 displacement reaction Methods 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 4
- 230000008521 reorganization Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000013075 data extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- -1 microelectronics Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention relates to a maskless scanning method for laser direct writing lithography, which can improve resolution. Which comprises the following steps: step 1, rasterizing original image data to obtain required target image rasterized data; step 2, shifting and recombining the rasterized data of the target image corresponding to a subframe to obtain a plurality of recombined data units directly used for a DMD pixel row after the rasterized data of the target image of the subframe is shifted and recombined; step 3, according to the setting of the DMD exposure projection, packaging any recombined data unit into a required exposure projection effective data body; and 4, sending a projection triggering signal to the DMD every time the moving platform advances for a set distance in the y-axis moving direction so as to drive the DMD to read the effective data body of the required exposure projection and carry out exposure projection according to the read effective data body of the exposure projection. The invention meets the requirements of maskless laser direct writing photoetching with high speed, high precision and high resolution.
Description
Technical Field
The invention relates to a scanning method, in particular to a maskless scanning method for laser direct writing lithography, which can improve resolution.
Background
Maskless laser direct writing lithography has explosive application in the fields of microfluidics, microelectrodes, graphene and other two-dimensional materials, microelectronics, semiconductors, spintrons, sensors and the like. Conventional mask alignment exposure requires the use of reticles made by a specialized supplier, while in development and production environments the reticle design needs to be altered and contamination due to sputtering of the photoresist can increase process steps.
Maskless laser direct write lithography avoids the use of a physical mask and instead draws a pattern directly on the photoresist. Maskless laser direct-writing photoetching designs an electronic mask through software, for example, EDA software is used for making a layout and copying the layout into a related computer, then the data of the layout layer required to be exposed is selected and is transmitted to a spatial light modulator through the control of the computer, and a target pattern is directly exposed on photoresist through the modulation of an optical system. The exposure method adopts the digital mask of the spatial light modulator to replace the physical mask of the traditional photoetching, thereby saving the manufacturing cost of the mask. Meanwhile, the design pattern can be directly modified in software, so that the digital mask can be rapidly changed, and the flexibility of photoetching is enhanced.
Currently, the spatial light modulators used in maskless laser direct writing lithography are mainly liquid crystal Spatial Light Modulators (SLM) and Digital Micromirror Devices (DMD). DMD refresh frequency is very high, and can reach dozens of kHz at most, and various mature products are available, and the average price is lower; and LCOS-SLM refresh frequency is lower, only a few hundred Hz, mostly integrated devices, and the average price is higher. When the DMD is used for maskless laser direct writing photoetching, the scanning resolution is low, and the actual photoetching requirement is difficult to meet.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a scanning method for maskless laser direct-writing lithography, which can improve the resolution, can efficiently and accurately read image data, and meets the requirements of maskless laser direct-writing lithography with high speed, high precision and high resolution.
According to the technical scheme provided by the invention, the scanning method for the maskless laser direct-writing lithography, which can improve the resolution, comprises the following steps:
step 2, rasterizing the original image data according to the resolution d to obtain needed target image rasterized data; configuring the DMD pixel rows of p lines into a subframe, and performing displacement recombination on rasterized data of a target image corresponding to the subframe to obtain a plurality of recombined data units directly used for DMD pixel rows after the rasterized data of the target image of the subframe is subjected to displacement recombination;
step 3, packaging any recombined data unit into a required exposure projection effective data body according to the configuration of the DMD exposure projection;
and 4, during exposure scanning, sending a projection trigger signal to the DMD every time the moving platform advances by a distance of S x d in the y-axis moving direction so as to drive the DMD to read the effective data body of the exposure projection required and carry out exposure projection according to the read effective data body of the exposure projection, wherein S is a positive integer.
In step 1, the process configuration parameters of the direct write lithography include an ideal line width W, an ideal/actual proportionality coefficient m, a process error ratio n, a resolution coefficient k corresponding to the actual line width, and a resolution correction parameter Δ d
After the DMD is adjusted to be in a position state of an inclination angle theta with the motion platform, corresponding coordinate systems are respectively established for the motion platform and the DMD, so that a coordinate system x-y of the motion platform and a coordinate system x '-y' of the DMD are obtained.
After establishing and obtaining a coordinate system x ' -y ' of the DMD, for two adjacent DMD pixels in the x ' direction: the method comprises the following steps that p sub-pixels are different in the x direction of a moving platform, and 1 sub-pixel is different in the y direction of the moving platform;
for two adjacent DMD pixels in the y' direction, the difference between the two adjacent DMD pixels in the x direction of the motion platform is 1 sub-pixel, and the difference between the two adjacent DMD pixels in the y direction of the motion platform is p sub-pixels;
rasterize data for the target image, one pixel corresponding to one pixel within the DMD.
In step 2, after the target image rasterized data corresponding to a subframe is subjected to displacement recombination, p recombined data units are obtained; all sub-pixel data in a recombined data unit are positioned in the same row in the x direction, and the distance between the adjacent pixel data is p sub-pixels;
in one subframe, for any two adjacent recombination data units, the two adjacent recombination data units are separated by p sub-pixels in the y direction, and the sub-pixel data of one recombination data unit and the corresponding adjacent sub-pixel data in the other recombination data unit are separated by 1 sub-pixel in the x direction.
When the recombined data units in one subframe are accessed by using a programmed storage medium, the number num of groups is set and circulated, different recombined data units access the same row in sequence, each recombined data unit is only burst once, and the data for each DMD row is extracted according to columns.
For the number of groups num, there are: num > 2.
When the recombination data unit is packaged, the obtained exposure projection effective data body comprises an effective display bit formed by utilizing the recombination data unit and an ineffective display bit matched with the effective display bit.
The invention has the advantages that: after the resolution d, the subdivision number p and the inclination angle theta are obtained, the DMD is inclined to the theta position state relative to the motion platform, so that the resolution which is far smaller than the size of a light spot can be realized by utilizing the inclined scanning, and the requirements of high precision and high resolution are met; the method comprises the steps of rasterizing original image data to obtain needed target image rasterized data, carrying out displacement recombination on the obtained target image rasterized data, utilizing a programming storage medium to carry out data access, quickly and efficiently reading the target image rasterized data, and improving the productivity of direct-write lithography by increasing the trigger distance interval of the platform in the motion direction and adjusting the rule of data extraction.
Drawings
FIG. 1 is a schematic diagram of the present invention for establishing the coordinate system x-y of the motion platform and the coordinate system x '-y' of the DMD.
FIG. 2 is a schematic diagram illustrating the DMD adjusted to be tilted according to the present invention.
FIG. 3 is a schematic diagram of the present invention after obtaining rasterized data of a target image.
FIG. 4 is a diagram illustrating a recombination sub-pixel to be shifted in a subframe according to the present invention.
FIG. 5 is a schematic diagram of shifted recombined data obtained by the present invention.
FIG. 6 is a diagram of shifted reorganization data in a programmed storage medium according to the present invention.
FIG. 7 is a schematic diagram of an exposure projection effective data volume obtained by the present invention.
Detailed Description
The invention is further illustrated by the following specific figures and examples.
In order to meet the requirements of maskless laser direct-writing photoetching with high speed, high precision and high resolution, the scanning method comprises the following steps:
specifically, the process configuration parameters of the direct write lithography include an ideal line width W, an ideal/actual proportionality coefficient m, a process error ratio n, a resolution coefficient k corresponding to the actual line width, and a resolution correction parameter Δ d
The unit of the ideal line width W is μm, the resolution coefficient k corresponding to the actual line width is generally 60% to 70%, and the specific conditions of the process configuration parameters of the direct-write lithography can be determined according to the requirements of the direct-write lithography, and are known to those skilled in the art. After the above process configuration parameters are obtained, the resolution d, the subdivision number p and the inclination angle θ can be determined.
In specific implementation, after the DMD is adjusted to the position state of the inclination angle θ between the DMD and the motion platform, corresponding coordinate systems are respectively established for the motion platform and the DMD, so as to obtain a coordinate system x-y of the motion platform and a coordinate system x '-y' of the DMD.
Fig. 1 is a schematic diagram showing a coordinate system x-y of the motion stage and a coordinate system x '-y' of the DMD, and fig. 2 is a schematic diagram showing a positional state where the DMD is tilted by θ with respect to the motion stage. In specific implementation, after a coordinate system x ' -y ' of the DMD is established, two adjacent DMD pixels in the x ' direction are subjected to: the method comprises the following steps that p sub-pixels are different in the x direction of a moving platform, and 1 sub-pixel is different in the y direction of the moving platform;
for two adjacent DMD pixels in the y' direction, the difference between the two adjacent DMD pixels in the x direction of the motion platform is 1 sub-pixel, and the difference between the two adjacent DMD pixels in the y direction of the motion platform is p sub-pixels;
rasterize data for the target image, one pixel corresponding to one pixel within the DMD.
In the embodiment of the invention, after the original image data is rasterized, the rasterized data of the target image is obtained, wherein in the rasterized data of the target image, one pixel comprises p sub-pixels, and the area of one pixel is (p d)2. Fig. 3 is a specific schematic diagram of rasterized data of a target image, wherein the bold portion in fig. 3 is shown as a pixel corresponding to a DMD pixel. In specific implementation, after the subdivision number p and the inclination angle θ are determined, the original image data may be rasterized according to the corresponding relationship of the pixels, and a specific rasterization process is well known to those skilled in the art.
Step 2, rasterizing the original image data according to the resolution d to obtain needed target image rasterized data; configuring the DMD pixel rows of p lines into a subframe, and performing displacement recombination on rasterized data of a target image corresponding to the subframe to obtain a plurality of recombined data units directly used for DMD pixel rows after the rasterized data of the target image of the subframe is subjected to displacement recombination;
in specific implementation, in order to extract a line of data from the rasterized data of the target image and directly use the line of data for one DMD line, the rasterized data of the target image shown in fig. 3 is subjected to shifting and reorganization in a coordinate system x-y and a coordinate system x '-y', specifically, the rasterized data of the target image corresponding to one subframe is subjected to shifting and reorganization to obtain p reorganized data units; all sub-pixel data in a recombined data unit are positioned in the same row in the x direction, and the distance between the adjacent pixel data is p sub-pixels;
in one subframe, for any two adjacent recombination data units, the two adjacent recombination data units are separated by p sub-pixels in the y direction, and the sub-pixel data of one recombination data unit and the corresponding adjacent sub-pixel data in the other recombination data unit are separated by 1 sub-pixel in the x direction.
The specific process of shift recombination is described in detail below. Fig. 3 is a schematic diagram of rasterized data of a target image, and after p rows of DMD pixels are configured into a subframe, rasterized data of the target image corresponding to the subframe can be obtained. In fig. 4, a specific case when p is 5 is shown. Generally, when dividing, the dividing may be performed sequentially along the y-axis direction, the number of the sub-frames obtained in detail is related to the number of rows of the actual DMD, and as is well known in the art, fig. 4 shows a case where three sub-frames are configured to be divided.
As is clear from the above description, one pixel includes p subpixels × p subpixels, and fig. 4 shows a case where one subpixel is extracted from one pixel when the shift recombination is performed. The corresponding pixel in the x' direction takes the same position of the sub-pixel and is in the same sub-pixel row after the taking, as in the case of fig. 4. For adjacent reorganized data units, the sub-pixels adjacent to each other in the x direction are separated by 1 sub-pixel, and all the reorganized data units within one sub-frame are as shown in fig. 5. The data shift rearrangement in any subframe takes the same way, and is not described in detail here.
In order to realize the fast reading of the graphic data, when the recombined data units in one subframe are accessed by using a programming storage medium, the group number num is set and circulated, different recombined data units access the same row in sequence, each recombined data unit is only burst once, and the data for each DMD row is extracted according to columns.
Specifically, for the number of pairs num, there are: num is more than 2, and the specific situation of the number of groups num can be selected according to actual needs. The programming storage medium may employ a conventional data access unit, such as DDR, etc., as is well known in the art. The storage of reorganized data units within a subframe in a programmed storage medium is shown in fig. 6, where a Burst (Burst) is a hardware characteristic of the programmed storage medium for a programmed storage medium unit. Burst (Burst) refers to a mode that adjacent storage and reorganization data units in the same row continuously perform data transmission, and the number of cycles of continuous transmission is the Burst Length (BL). When burst transmission is performed, as long as the initial column address and the burst length are specified, the memory automatically performs read/write operations on the corresponding number of the following storage units in sequence without continuously providing the column address by the controller, and specifically, the manner and process of burst transmission are well known to those skilled in the art.
Step 3, according to the setting of the DMD exposure projection, packaging any recombined data unit into a required exposure projection effective data body;
in specific implementation, when the reorganized data unit is packaged, the obtained exposure projection effective data body comprises an effective display bit formed by utilizing the reorganized data unit and an invalid display bit matched with the effective display bit. In the embodiment of the present invention, the specific condition of the effective data volume of the exposure projection is determined by the requirement of satisfying the DMD projection, which is well known to those skilled in the art. In one embodiment, the invalid display bits are generally located on both sides of the valid display bits, as shown in FIG. 7.
And 4, during exposure scanning, sending a projection trigger signal to the DMD every time the moving platform advances by a distance of S x d in the y-axis moving direction so as to drive the DMD to read the effective data body of the exposure projection required and carry out exposure projection according to the read effective data body of the exposure projection, wherein S is a positive integer.
In particular, after receiving the projection trigger signal, the driving method for reading the effective data volume of the exposure projection required and the specific process for performing exposure projection on the read effective data volume of the exposure projection are consistent with the prior art, which are well known in the art. S is a multiple number, and the size of S can be specifically selected according to actual needs, and is well known to those skilled in the art.
In conclusion, after the resolution d, the subdivision number p and the inclination angle theta are achieved, the DMD is inclined to the theta position state relative to the motion platform, so that the resolution which is far smaller than the size of a light spot can be achieved by utilizing the inclined scanning, and the requirements of high precision and high resolution are met; rasterization is carried out on original image data to obtain needed target image rasterization data, displacement recombination is carried out on the obtained target image rasterization data, data access is carried out by using DDR3, the target image rasterization data are read quickly and efficiently, and the productivity of direct writing lithography can be improved by increasing the trigger distance interval of the platform in the motion direction and adjusting the rule of data extraction.
Claims (7)
1. A scanning method for maskless laser direct-writing lithography capable of improving resolution is characterized by comprising the following steps:
step 1, determining the resolution d, the subdivision number p and the inclination angle theta of direct-write lithography scanning according to the process configuration parameters of the direct-write lithography, and adjusting the DMD to a position state with the inclination angle theta between the DMD and a motion platform according to the inclination angle theta;
step 2, rasterizing the original image data according to the resolution d to obtain needed target image rasterized data; configuring the DMD pixel rows of p lines into a subframe, and performing displacement recombination on rasterized data of a target image corresponding to the subframe to obtain a plurality of recombined data units directly used for DMD pixel rows after the rasterized data of the target image of the subframe is subjected to displacement recombination;
step 3, packaging any recombined data unit into a required exposure projection effective data body according to the configuration of the DMD exposure projection;
and 4, during exposure scanning, sending a projection trigger signal to the DMD every time the moving platform advances by a distance of S x d in the y-axis moving direction so as to drive the DMD to read the effective data body of the exposure projection required and carry out exposure projection according to the read effective data body of the exposure projection, wherein S is a positive integer.
2. The scanning method of claim 1, wherein in step 1, the process configuration parameters of the direct write lithography include an ideal line width W, an ideal/actual scaling factor m, a process error ratio n, a resolution factor k corresponding to the actual line width, and a resolution correction parameter Δ d, and wherein the parameters include
After the DMD is adjusted to be in a position state of an inclination angle theta with the motion platform, corresponding coordinate systems are respectively established for the motion platform and the DMD, so that a coordinate system x-y of the motion platform and a coordinate system x '-y' of the DMD are obtained.
3. The scanning method for maskless laser direct write lithography according to claim 2, wherein after establishing the coordinate system x ' -y ' of the DMD, two adjacent DMD pixels in the x ' direction are scanned: the method comprises the following steps that p sub-pixels are different in the x direction of a moving platform, and 1 sub-pixel is different in the y direction of the moving platform;
for two adjacent DMD pixels in the y' direction, the difference between the two adjacent DMD pixels in the x direction of the motion platform is 1 sub-pixel, and the difference between the two adjacent DMD pixels in the y direction of the motion platform is p sub-pixels;
rasterize data for the target image, one pixel corresponding to one pixel within the DMD.
4. The scanning method for maskless laser direct write lithography according to claim 2 or 3, wherein in step 2, p reconstructed data units are obtained after the rasterized data of the target image corresponding to a subframe is shifted and reconstructed; all the sub-pixel data in a recombined data unit are positioned in the same row in the x direction, and the distance between the adjacent sub-pixel data is p sub-pixels;
in one subframe, for any two adjacent recombination data units, the two adjacent recombination data units are separated by p sub-pixels in the y direction, and the sub-pixel data of one recombination data unit and the corresponding adjacent sub-pixel data in the other recombination data unit are separated by 1 sub-pixel in the x direction.
5. The scanning method of maskless laser direct write lithography according to claim 4, wherein, when the reorganized data units in a sub-frame are accessed by using a programmed storage medium, the number of sets num is set and circulated, different reorganized data units access the same row in sequence, each reorganized data unit is burst only once, and the data for each DMD row is extracted in columns.
6. The scanning method for maskless laser direct write lithography according to any of claim 5, wherein for the number of sets num, there are: num > 2.
7. The scanning method for maskless laser direct write lithography according to any of claims 1 to 3, wherein when the reconstructed data unit is encapsulated, the obtained exposure projection valid data volume includes valid display bits formed by the reconstructed data unit and invalid display bits adapted to the valid display bits.
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Application publication date: 20220318 |