CN106773543A - A kind of method of work during the dip sweeping of DMD - Google Patents
A kind of method of work during the dip sweeping of DMD Download PDFInfo
- Publication number
- CN106773543A CN106773543A CN201611267980.7A CN201611267980A CN106773543A CN 106773543 A CN106773543 A CN 106773543A CN 201611267980 A CN201611267980 A CN 201611267980A CN 106773543 A CN106773543 A CN 106773543A
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- Prior art keywords
- dmd
- micro mirror
- scanning direction
- work during
- scanned
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
The invention discloses method of work during a kind of DMD dip sweeping, region to be scanned is subdivided into the scan stripes band of a determining deviation, the center spacing of the size equal to neighboring micro unit of spacing by micro mirror unit in the prior art.The present invention provides a kind of dip sweeping method of DMD, a kind of dip sweeping method of DMD, when exposure is scanned to photosensitive material part, its scanning direction forms an angle described DMD with the line direction or column direction of micro mirror array on DMD；This angle can make scanning track more crypto set of the micro mirror unit of DMD on photosensitive material part, in scan exposure, in the case where sweep speed is not reduced, can process the fine structure of lines.
Description
Technical field
The present invention relates to laser writing technology field, and in particular to work side during a kind of DMD dip sweeping
Method.
Background technology
In existing laser direct writing equipment, commonly using to DMD (Digital Micromirror
Devices, abbreviation DMD), DMD is to control micromirror to perform mechanical movement to realize the dress of optical function with digital voltage signal
Put.Current silicon micromachining technology has been able to process the high-quality dmd chip for meeting technological requirement, on a silicon chip
Hundreds of thousands or up to a million micro-reflectors can be once manufactured, the general rectangular permutation of these micro-reflectors is arranged on DMD.
In the prior art, the application method of DMD is such, and DMD is typically mounted on a scan axis, and DMD is along sweeping
Retouch the direction that axle moves along a straight line back and forth to be maintained static scanning direction, or DMD, object to be exposed does straight line back and forth under DMD
Also scanning direction is cried in motion, the direction of this linear motion.In the prior art, it is micro- on DMD 1 referring to the drawings 1
The column direction of the rectangular array of the composition of mirror unit 3 is parallel with scanning direction, during 1 inswept region 2 to be scanned of DMD, treats
Scanning area 2 is subdivided into the scan stripes band that spacing is PW1 by micro mirror unit 3, and PW1 is equal to the spacing distance d of micro mirror unit 3.
In laser plate-making technique, the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 is more intensive, and the effect of scan exposure is more preferable,
Image is apparent.
The content of the invention
Present invention aim at method of work during a kind of DMD dip sweeping of offer, numeral can be improved micro-
The density of the scanning track of micro mirror unit, improves the quality of scan exposure on mirror device.
In order to realize foregoing invention purpose, the present invention provides method of work during a kind of DMD dip sweeping,
A kind of method of work during DMD dip sweeping, described DMD is scanned to photosensitive material part
During exposure, its scanning direction forms an angle with the line direction or column direction of micro mirror array on DMD；This angle
Scanning track more crypto set of the micro mirror unit of DMD on photosensitive material part can be made.
Preferably, on the scanning direction of above-mentioned DMD and DMD the line direction of micro mirror array or
Angular range is formed by column direction：7.1150 °~7.1350 °.
Preferably, on the scanning direction of above-mentioned DMD and DMD the line direction of micro mirror array or
Angular range is formed by column direction：6.3302 °~6.3502 °.
Preferably, on the scanning direction of above-mentioned DMD and DMD the line direction of micro mirror array or
Angular range is formed by column direction：5.7006 °~5.7206 °.
Preferably, on the scanning direction of above-mentioned DMD and DMD the line direction of micro mirror array or
Angular range is formed by column direction：5.1844 °~5.2044 °.
Preferably, on the scanning direction of above-mentioned DMD and DMD the line direction of micro mirror array or
Angular range is formed by column direction：4.7536 °~4.7736 °.
Preferably, on the scanning direction of above-mentioned DMD and DMD the line direction of micro mirror array or
Angular range is formed by column direction：4.3887 °~4.4087 °.
Preferably, on the scanning direction of above-mentioned DMD and DMD the line direction of micro mirror array or
Angular range is formed by column direction：4.0756 °~4.0956 °.
Preferably, on the scanning direction of above-mentioned DMD and DMD the line direction of micro mirror array or
Angular range is formed by column direction：3.8041 °~3.8241 °.
Preferably, on the scanning direction of above-mentioned DMD and DMD the line direction of micro mirror array or
Angular range is formed by column direction：3.5663 °~3.5863 °.
The technical effects of the invention are that：Scanning direction when DMD and micro mirror array on DMD
Line direction or column direction form an angle θ when, the spacing of the scan stripes band that region to be scanned is segmented by micro mirror unit is PW2,
The distance between two adjacent micro mirror units are d, PW2=d × sin θ, and region to be scanned is thin by micro mirror unit in the prior art
The spacing of the scan stripes band for dividing is PW1, PW1=d；Obviously PW1 is more than PW2.Therefore using in the case of certain angle, treat
The scan stripes band more crypto set that scanning area is segmented by micro mirror unit, scan exposure effect is more preferable.
Brief description of the drawings
Fig. 1 is the scan mode schematic diagram of prior art；
Fig. 2 is the schematic diagram of scan mode of the present invention.
Specific embodiment
Technical scheme is clearly and completely described below in conjunction with drawings and Examples.
Embodiment 1：
Referring to the drawings 2, DMD 1 when exposure is scanned to photosensitive material part, its scanning direction and digital micro-mirror
Angle theta=7.1250 ° formed by the column direction of micro mirror array on device 1, two adjacent micro mirror units on DMD 1
Center spacing between 3 is d；The now spacing of the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 in a scanning direction
It is PW2, PW2=d × sin θ=0.124d.Relative to prior art, the scan stripes of the subdivision of micro mirror unit 3 are intensive with about 8 times
Degree is improved；Every bit on single scan stripes band, DMD 1 is scanned to it, often by 8 row micro mirror units 3, should
Point can repeat covering once by micro mirror unit 3.
Embodiment 2：
Referring to the drawings 2, DMD 1 when exposure is scanned to photosensitive material part, its scanning direction and digital micro-mirror
Angle theta=6.3402 ° formed by the column direction of micro mirror array on device 1, two adjacent micro mirror units on DMD 1
Center spacing between 3 is d；The now spacing of the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 in a scanning direction
It is PW2, PW2=d × sin θ=0.1104d.Relative to prior art, the scan stripes of the subdivision of micro mirror unit 3 are close with about 9 times
Intensity is improved；Every bit on single scan stripes band, DMD 1 is scanned to it, often by 9 row micro mirror units 3,
The point can repeat covering once by micro mirror unit 3.
Embodiment 3：
Referring to the drawings 2, DMD 1 when exposure is scanned to photosensitive material part, its scanning direction and digital micro-mirror
Angle theta=5.7106 ° formed by the column direction of micro mirror array on device 1, two adjacent micro mirror units on DMD 1
Center spacing between 3 is d；The now spacing of the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 in a scanning direction
It is PW2, PW2=d × sin θ=0.0995d.Relative to prior art, the scan stripes of the subdivision of micro mirror unit 3 are with about 10 times
Closeness is improved；Every bit on single scan stripes band, DMD 1 is scanned to it, often by 10 row micro mirror lists
Unit 3, the point can repeat covering once by micro mirror unit 3.
Embodiment 4：
Referring to the drawings 2, DMD 1 when exposure is scanned to photosensitive material part, its scanning direction and digital micro-mirror
Angle theta=5.1944 ° formed by the column direction of micro mirror array on device 1, two adjacent micro mirror units on DMD 1
Center spacing between 3 is d；The now spacing of the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 in a scanning direction
It is PW2, PW2=d × sin θ=0.09054d.Relative to prior art, the scan stripes of the subdivision of micro mirror unit 3 are with about 11 times
Closeness is improved；Every bit on single scan stripes band, DMD 1 is scanned to it, often by 11 row micro mirror lists
Unit 3, the point can repeat covering once by micro mirror unit 3.
Embodiment 5：
Referring to the drawings 2, DMD 1 when exposure is scanned to photosensitive material part, its scanning direction and digital micro-mirror
Angle theta=4.7636 ° formed by the column direction of micro mirror array on device 1, two adjacent micro mirror units 3 on DMD 1
Between center spacing be d；The now spacing of the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 in a scanning direction
It is PW2, PW2=d × sin θ=0.08301d.Relative to prior art, the scan stripes of the subdivision of micro mirror unit 3 are with about 12 times
Closeness is improved；Every bit on single scan stripes band, DMD 1 is scanned to it, often by 12 row micro mirror lists
Unit 3, the point can repeat covering once by micro mirror unit 3.
Embodiment 6：
Referring to the drawings 2, DMD 1 when exposure is scanned to photosensitive material part, its scanning direction and digital micro-mirror
Angle theta=4.3987 ° formed by the column direction of micro mirror array on device 1, two adjacent micro mirror units 3 on DMD 1
Between center spacing be d；The now spacing of the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 in a scanning direction
It is PW2, PW2=d × sin θ=0.07669d.Relative to prior art, the scan stripes of the subdivision of micro mirror unit 3 are with about 13 times
Closeness is improved；Every bit on single scan stripes band, DMD 1 is scanned to it, often by 13 row micro mirror lists
Unit 3, the point can repeat covering once by micro mirror unit 3.
Embodiment 7：
Referring to the drawings 2, DMD 1 when exposure is scanned to photosensitive material part, its scanning direction and digital micro-mirror
Angle theta=4.0856 ° formed by the column direction of micro mirror array on device 1, two adjacent micro mirror units 3 on DMD 1
Between center spacing be d；The now spacing of the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 in a scanning direction
It is PW2, PW2=d × sin θ=0.07125d.Relative to prior art, the scan stripes of the subdivision of micro mirror unit 3 are with about 14 times
Closeness is improved；Every bit on single scan stripes band, DMD 1 is scanned to it, often by 14 row micro mirror lists
Unit 3, the point can repeat covering once by micro mirror unit 3.
Embodiment 8：
Referring to the drawings 2, DMD 1 when exposure is scanned to photosensitive material part, its scanning direction and digital micro-mirror
Angle theta=3.8141 ° formed by the column direction of micro mirror array on device 1, two adjacent micro mirror units 3 on DMD 1
Between center spacing be d；The now spacing of the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 in a scanning direction
It is PW2, PW2=d × sin θ=0.06652d.Relative to prior art, the scan stripes of the subdivision of micro mirror unit 3 are with about 15 times
Closeness is improved；Every bit on single scan stripes band, DMD 1 is scanned to it, often by 15 row micro mirror lists
Unit 3, the point can repeat covering once by micro mirror unit 3.
Embodiment 9：
Referring to the drawings 2, DMD 1 when exposure is scanned to photosensitive material part, its scanning direction and digital micro-mirror
Angle theta=3.5763 ° formed by the column direction of micro mirror array on device 1, two adjacent micro mirror units 3 on DMD 1
Between center spacing be d；The now spacing of the scan stripes band that region to be scanned 2 is segmented by micro mirror unit 3 in a scanning direction
It is PW2, PW2=d × sin θ=0.06238d.Relative to prior art, the scan stripes of the subdivision of micro mirror unit 3 are with about 16 times
Closeness is improved；Every bit on single scan stripes band, DMD 1 is scanned to it, often by 16 row micro mirror lists
Unit 3, the point can repeat covering once by micro mirror unit 3.
It should be appreciated that above-described embodiment is used only for explaining the present invention, it is not intended to limit the invention, institute is with good grounds
The other embodiment that the principle of the invention draws, within protection scope of the present invention.
Claims (10)
1. method of work during a kind of DMD dip sweeping, it is characterised in that：Described DMD is right
When photosensitive material part is scanned exposure, on its scanning direction and DMD the line direction or column direction of micro mirror array into
Certain angle；This angle can make scanning track more crypto set of the micro mirror unit of DMD on photosensitive material part.
2. method of work during a kind of DMD dip sweeping according to claim 1, it is characterised in that described
DMD scanning direction and DMD on micro mirror array line direction or angle model formed by column direction
Enclose for：7.1150 °~7.1350 °.
3. method of work during a kind of DMD dip sweeping according to claim 1, it is characterised in that described
DMD scanning direction and DMD on micro mirror array line direction or angle model formed by column direction
Enclose for：6.3302 °~6.3502 °.
4. method of work during a kind of DMD dip sweeping according to claim 1, it is characterised in that described
DMD scanning direction and DMD on micro mirror array line direction or angle model formed by column direction
Enclose for：5.7006 °~5.7206 °.
5. method of work during a kind of DMD dip sweeping according to claim 1, it is characterised in that described
DMD scanning direction and DMD on micro mirror array line direction or angle model formed by column direction
Enclose for：5.1844 °~5.2044 °.
6. method of work during a kind of DMD dip sweeping according to claim 1, it is characterised in that described
DMD scanning direction and DMD on micro mirror array line direction or angle model formed by column direction
Enclose for：4.7536 °~4.7736 °.
7. method of work during a kind of DMD dip sweeping according to claim 1, it is characterised in that described
DMD scanning direction and DMD on micro mirror array line direction or angle model formed by column direction
Enclose for：4.3887 °~4.4087 °.
8. method of work during a kind of DMD dip sweeping according to claim 1, it is characterised in that described
DMD scanning direction and DMD on micro mirror array line direction or angle model formed by column direction
Enclose for：4.0756 °~4.0956 °.
9. method of work during a kind of DMD dip sweeping according to claim 1, it is characterised in that described
DMD scanning direction and DMD on micro mirror array line direction or angle model formed by column direction
Enclose for：3.8041 °~3.8241 °.
10. method of work during a kind of DMD dip sweeping according to claim 1, it is characterised in that institute
The line direction or angle formed by column direction of micro mirror array on the scanning direction of the DMD stated and DMD
Scope is：3.5663 °~3.5863 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611267980.7A CN106773543A (en) | 2016-12-31 | 2016-12-31 | A kind of method of work during the dip sweeping of DMD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611267980.7A CN106773543A (en) | 2016-12-31 | 2016-12-31 | A kind of method of work during the dip sweeping of DMD |
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| Publication Number | Publication Date |
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| CN106773543A true CN106773543A (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611267980.7A Pending CN106773543A (en) | 2016-12-31 | 2016-12-31 | A kind of method of work during the dip sweeping of DMD |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109656101A (en) * | 2018-12-07 | 2019-04-19 | 东莞市多普技术研发有限公司 | A kind of data processing method of digital micro-mirror dip sweeping |
| CN114200784A (en) * | 2021-12-24 | 2022-03-18 | 锡凡半导体无锡有限公司 | Maskless laser direct-writing photoetching scanning method capable of improving resolution |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101189555A (en) * | 2005-03-31 | 2008-05-28 | 富士胶片株式会社 | Drawing device and method |
| CN101218544A (en) * | 2005-06-24 | 2008-07-09 | 富士胶片株式会社 | Exposure method and apparatus |
| CN102890426A (en) * | 2012-09-18 | 2013-01-23 | 天津芯硕精密机械有限公司 | Oblique scan display method in direct writing photoetching system |
| CN102890429A (en) * | 2012-09-18 | 2013-01-23 | 天津芯硕精密机械有限公司 | Method for increasing data transmission speed in photoetching system through skew scanning display |
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2016
- 2016-12-31 CN CN201611267980.7A patent/CN106773543A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101189555A (en) * | 2005-03-31 | 2008-05-28 | 富士胶片株式会社 | Drawing device and method |
| CN101218544A (en) * | 2005-06-24 | 2008-07-09 | 富士胶片株式会社 | Exposure method and apparatus |
| CN102890426A (en) * | 2012-09-18 | 2013-01-23 | 天津芯硕精密机械有限公司 | Oblique scan display method in direct writing photoetching system |
| CN102890429A (en) * | 2012-09-18 | 2013-01-23 | 天津芯硕精密机械有限公司 | Method for increasing data transmission speed in photoetching system through skew scanning display |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109656101A (en) * | 2018-12-07 | 2019-04-19 | 东莞市多普技术研发有限公司 | A kind of data processing method of digital micro-mirror dip sweeping |
| CN114200784A (en) * | 2021-12-24 | 2022-03-18 | 锡凡半导体无锡有限公司 | Maskless laser direct-writing photoetching scanning method capable of improving resolution |
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| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yu Qingping Inventor before: Yu Qingping Inventor before: Gao Ming Inventor before: Chen Xiutao Inventor before: Dong Hui |
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Application publication date: 20170531 |