CN114188817B - Microwave photon integrated direct-tuning laser chip circuit and laser - Google Patents
Microwave photon integrated direct-tuning laser chip circuit and laser Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 32
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- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a microwave photon integrated direct-tuning laser chip circuit and a laser. The circuit comprises: the laser device comprises a microwave/millimeter wave integrated circuit chip, a laser chip and a collimating lens which are arranged on a silicon-based packaging circuit, and a photoelectric detector chip which is arranged on the microwave/millimeter wave integrated circuit chip, wherein the microwave/millimeter wave integrated circuit chip and the laser chip are used for processing input electric signals and converting the electric signals into optical signals; the optical signals output by the laser chip are converted into parallel optical signals through the collimating lens to be used; meanwhile, the photoelectric detector chip and the microwave/millimeter wave integrated circuit chip are used for carrying out feedback control on the laser chip according to the optical signals output by the laser chip. The invention realizes the chip-level packaging integration of the optical device, the collimating lens and the microwave/millimeter wave circuit, and changes the divergent light emitted by the laser chip into parallel light, so that the integration degree of the microwave photon integration direct-tuning laser chip circuit is higher and the use is more convenient.
Description
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a microwave photon integrated direct-tuning laser chip circuit and a laser.
Background
Microwave photonics is a rapidly developing interdisciplinary, and is increasingly widely used in many aspects of national defense, science and technology and daily life. Microwave photonics is mainly studied to realize the functions of generating, transmitting, distributing, processing and the like of microwave/millimeter wave signals by utilizing devices and methods of optoelectronics. With the development of technology, microwave photonics is required to realize higher speed, bandwidth, processing capability and dynamic range, and meanwhile, devices and systems have the characteristics of small size, light weight, low power consumption and the like.
The high-speed direct modulation semiconductor laser is a main light source device used in the current microwave photon system and optical fiber communication, and has the advantages of direct electro-optical conversion, high response speed, small volume, long service life, simple structure, easy realization and the like. At present, a high-speed direct modulation semiconductor laser mostly adopts an assembly mode of mixing and integrating devices such as a discrete laser chip, a detector chip, an inductor, a capacitor and the like, the laser chip is attached to a ceramic carrier, meanwhile, a backlight detector chip, a bias circuit of the laser chip, an input matching circuit and the like are attached to the ceramic carrier, the ceramic carrier integrating a photoelectric device is assembled into a laser packaging tube shell, and a high-speed electro-optical modulation function is realized.
Disclosure of Invention
The embodiment of the invention provides a microwave photon integrated direct-tuning laser chip circuit and a laser, which are used for solving the problems of low integration and inconvenient use in the prior art.
In a first aspect, an embodiment of the present invention provides a microwave photon integrated direct-tuning laser chip circuit, including: the device comprises a silicon-based packaging circuit, a microwave/millimeter wave integrated circuit chip, a laser chip, a collimating lens and a photoelectric detector chip;
the microwave/millimeter wave integrated circuit chip, the laser chip and the collimating lens are arranged on the silicon-based packaging circuit, and the photoelectric detector chip is arranged on the microwave/millimeter wave integrated circuit chip;
the input end of the microwave/millimeter wave integrated circuit chip is used for receiving the electric signals, and the output end of the microwave/millimeter wave integrated circuit chip is used for outputting the processed electric signals;
the laser chip is connected with the output end of the microwave/millimeter wave integrated circuit chip and is used for converting the received processed electric signals into optical signals for output;
the collimating lens is used for converting the optical signals output by the laser chip into parallel optical signals;
the photoelectric detector chip corresponds to the setting position of the laser chip and is used for receiving the optical signal output by the laser chip, converting the optical signal into a digital electric signal and carrying out feedback control on the laser chip through the microwave/millimeter wave integrated circuit chip according to the digital electric signal.
In one possible implementation manner, the collimating lens is disposed at a preset position after the laser chip outputs the optical signal, where the preset position is a position where the optical power of the optical signal output by the laser chip is maximum and the light spot is minimum.
In one possible implementation, the collimating lens is an aspherical lens designed according to the angle of divergence of the sagittal direction of the laser chip and the angle of divergence of the meridional direction.
In one possible implementation manner, the microwave/millimeter wave integrated circuit chip, the laser chip, the collimating lens and the silicon-based packaging circuit, and the photodetector chip and the microwave/millimeter wave integrated circuit chip are connected by adopting a gold-tin alloy welding mode, a Jin Jinjian mode, a micro-bump preparation mode or a flip-chip welding mode.
In one possible implementation, the photodetector chip is a side-sensitive photodetector, and the sensitive side corresponds to a light emitting position of the laser chip to receive the light signal emitted by the laser chip.
In one possible implementation, the microwave/millimeter wave integrated circuit chip includes: a microwave amplifying sub-circuit, a microwave matching sub-circuit and a biasing sub-circuit;
the input end of the microwave amplifying sub-circuit is the input end of the microwave/millimeter wave integrated circuit chip, the output end of the microwave amplifying sub-circuit is connected with the input end of the microwave matching sub-circuit, the output end of the microwave matching sub-circuit is connected with the output end of the bias sub-circuit and then is used as the output end of the microwave/millimeter wave integrated circuit chip, and the input end of the bias sub-circuit is connected with a preset voltage and is used for providing the laser chip with a required voltage.
In one possible implementation, the bias subcircuit includes: capacitance and inductance;
one end of the capacitor is respectively connected with one end of the inductor and then used as an input end of the bias subcircuit, and the other end of the capacitor is grounded;
the other end of the inductor is used as the output end of the bias sub-circuit.
In one possible implementation manner, the photo-detector chip is further used for being connected with a control chip, the input end of the bias sub-circuit is connected with the control chip, the photo-detector chip converts an optical signal output by the laser chip into a feedback electric signal and sends the feedback electric signal to the control chip, the control chip converts the feedback electric signal into a digital signal, calculates an output voltage according to the digital signal and optical power corresponding to the optical signal of the laser chip, and inputs the output voltage to the input end of the bias sub-circuit.
In a second aspect, an embodiment of the present invention provides a laser, including a microwave photonic integrated direct-tuning laser chip circuit according to any one of the foregoing embodiments.
The embodiment of the invention provides a microwave photon integrated direct-tuning laser chip circuit and a laser, which integrate a microwave/millimeter wave integrated circuit chip, a laser chip and a collimating lens on a silicon-based packaging circuit by adopting the silicon-based packaging circuit and a design method of photoelectric isomerism integration, integrate a photoelectric detector chip on the microwave/millimeter wave integrated circuit chip, and convert an optical signal output by the laser chip into a parallel optical signal by utilizing the collimating lens, thereby realizing chip-level packaging of an optical device, the collimating lens and the microwave/millimeter wave integrated circuit, solving the problem of large divergence angle of the optical signal output by the laser chip, and further forming a monolithic integrated system with good collimating effect and convenient use. Because the volume of each chip is small, the volume of the integrated microwave photon integrated direct-tuning laser chip is also smaller, so that the integration degree of the device is improved compared with a high-speed direct-tuning semiconductor laser with a discrete device assembly structure in the prior art, and the divergent light emitted by the laser chip is changed into parallel light, so that the microwave photon integrated direct-tuning laser chip is convenient to use.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a microwave photon integrated direct-tuning laser chip circuit provided by an embodiment of the invention;
fig. 2 is a schematic diagram of an overall frame structure of a microwave photon integrated direct-tuning laser chip circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a structure of a mounting alignment lens by an active coupling method according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a microwave photon integrated direct modulation laser chip circuit according to another embodiment of the present invention;
FIG. 5 is a schematic illustration of a voltammetric characteristic curve provided by an embodiment of the present invention;
fig. 6 is a schematic diagram of the relationship between the current and the output light intensity of the laser chip according to the embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the following description will be made by way of specific embodiments with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a microwave photon integrated direct-tuning laser chip circuit according to an embodiment of the present invention, where the microwave photon integrated direct-tuning laser chip circuit includes: a silicon-based package circuit 10, a microwave/millimeter wave integrated circuit chip 20, a laser chip 30, a collimator lens 40, and a photodetector chip 50.
Wherein the microwave/millimeter wave integrated circuit chip 20, the laser chip 30 and the collimator lens 40 are all disposed on the silicon-based package circuit 10, and the photodetector chip 50 is disposed on the microwave/millimeter wave integrated circuit chip 20.
The input end of the microwave/millimeter wave integrated circuit chip 20 is used for receiving the electrical signal, and the output end of the microwave/millimeter wave integrated circuit chip 20 is used for outputting the processed electrical signal.
The laser chip 30 is connected to an output terminal of the microwave/millimeter wave integrated circuit chip 20, and is configured to convert the received processed electrical signal into an optical signal for output.
The collimator lens 40 is used to convert the optical signal output from the laser chip 30 into a parallel optical signal.
The photodetector chip 50 corresponds to the setting position of the laser chip 30, and is configured to receive the optical signal output by the laser chip 30, convert the optical signal into a digital electrical signal, and perform feedback control on the laser chip 30 through the microwave/millimeter wave integrated circuit chip 20 according to the digital electrical signal.
The microwave/millimeter wave integrated circuit chip is usually prepared by adopting a CMOS (complementary metal oxide semiconductor) process, the laser chip is usually made of InP (indium tin oxide) materials, the photoelectric detector chip is usually made of InGaAs materials, the materials cannot directly realize heterogeneous growth with silicon base, and meanwhile, the problems of different thermal expansion coefficients exist among the materials. There is therefore a need to prepare silicon-based packaged circuits. The preparation method is a common method for growing a silicon-based substrate, and a metallization process is adopted on the silicon-based substrate to obtain a corresponding electrode pad. The silicon-based packaging circuit can integrate a microwave/millimeter wave integrated circuit chip, a laser chip and a collimating lens, and further integrate a photoelectric detector chip on the microwave/millimeter wave integrated circuit chip by utilizing photoelectric heterogeneous integration, so as to realize a multifunctional photoelectric signal processing function, form a monolithic integrated system with circuits and optical paths manufactured on the same chip, and realize miniaturization, integration and multifunction of the microwave photon integrated direct-tuning laser chip circuit.
By way of example, the silicon-based packaging circuit can be prepared by adopting a micron-nanometer semiconductor process, and the silicon-based packaging circuit prepared by adopting the micron-nanometer semiconductor process has the advantages of high precision, high reliability, good structural strength and the like, and can effectively improve the performance of the package-level chip.
In the prior art, a laser chip, a detector chip and a microwave/millimeter wave circuit are all discrete devices, and the laser chip, the detector chip and the microwave/millimeter wave circuit are respectively assembled to construct a high-speed direct-modulation semiconductor laser. Particularly, the discrete assembly process of the lens and the laser greatly restricts the light-emitting performance of the laser. Under the condition of poor assembly precision, even under the condition that the chip such as the laser detector is assembled, the alignment can not be realized due to the reasons of physical space or the inclination of output beams of the laser detector. According to the embodiment, the silicon-based packaging circuit and the design method of the photoelectric heterogeneous integration are adopted, the chip level packaging is utilized to jointly assemble the chip, the detector and the like, assembly and welding can be carried out under the condition that the output laser performance is optimized, and the yield is guaranteed while the production efficiency is effectively improved.
When the chip-level packaging is carried out, the microwave/millimeter wave integrated circuit chip, the laser chip, the collimating lens and the silicon-based packaging circuit, and the photoelectric detector chip and the microwave/millimeter wave integrated circuit chip can be connected in a mode of gold-tin alloy welding, jin Jinjian combination, micro-bump preparation or flip-chip welding according to actual needs. For example, the chips can be soldered by gold-tin alloy under the condition that PAD can be interconnected between the chips; when one of the chips is a BGA ball-embedded chip (such as a high-density solder joint microwave millimeter wave integrated circuit), the chip can be connected by adopting a flip-chip bonding method.
According to the microwave photon integrated direct-tuning laser chip circuit, the silicon-based packaging circuit and the design method of photoelectric isomerism integration are adopted, the microwave/millimeter wave integrated circuit chip, the laser chip and the collimating lens are integrated on the silicon-based packaging circuit, the photoelectric detector chip is integrated on the microwave/millimeter wave integrated circuit chip, the collimating lens is utilized to convert the optical signals output by the laser chip into parallel optical signals, chip-level packaging of an optical device, the collimating lens and the microwave/millimeter wave integrated circuit is realized, the problem that the divergence angle of the optical signals output by the laser chip is large is solved, and then the single-chip integrated system with good collimating effect and convenient use is formed. Because the volume of each chip is small, the volume of the integrated microwave photon integrated direct-tuning laser chip is also smaller, so that the integration degree of the device is improved compared with a high-speed direct-tuning semiconductor laser with a discrete device assembly structure in the prior art, and the divergent light emitted by the laser chip is changed into parallel light, so that the microwave photon integrated direct-tuning laser chip is convenient to use.
In an embodiment, as shown in fig. 2, the collimating lens 40 is disposed at a preset position after the laser chip 30 outputs the optical signal, where the preset position is a position where the optical power of the optical signal output by the laser chip 30 is maximum and the light spot is minimum.
The collimating lens 40 and the laser chip 30 are both mounted on the silicon-based packaging circuit 10, and the collimating lens 40 can be precisely mounted on the silicon-based packaging circuit 10 by means of active coupling so as to convert the optical signal output by the laser chip 30 into a parallel optical signal.
As shown in fig. 3, the active coupling is realized by emitting light from the laser chip 30, and then mounting a high-precision optical power meter in the emission direction after the light is applied to the collimator lens 40. Wherein the laser chip 30 is on the same horizontal line as the optical power meter for detecting the active coupling effect, and the degrees of freedom of the two are only present in the direction of the laser chip-collimator lens-optical power meter. When the light emitted from the laser chip irradiates the optical power meter through the collimating lens, a unique solution must exist so that the incident optical power is maximum and the light spot is minimum. At this time, precise coupling of the collimator lens is achieved. The collimating lens can be clamped by the clamping jaw of the mechanical arm, so that the collimating effect is fully ensured when the collimating lens is welded or glued with the silicon-based packaging circuit. The method of coupling the collimating lens can adopt spiral scanning, line scanning, climbing algorithm and the like.
In one embodiment, the collimating lens 40 may be an aspheric lens, which may be designed according to the angle of divergence of the sagittal direction and the angle of divergence of the meridional direction of the laser chip 30.
In order to solve the problem that the divergence angle of the optical signal output by the laser chip is large, the aspheric lens can be designed for the divergence angle of the sagittal direction and the divergence angle of the meridional direction of the laser chip, so that the optical signal output by the laser chip is converted into a parallel optical signal after being collimated by the aspheric collimating lens, and a good collimating effect on the optical signal output by the laser chip is achieved.
In one embodiment, as shown in fig. 4, the microwave/millimeter wave integrated circuit chip 20 includes: a microwave amplification sub-circuit 201, a microwave matching sub-circuit 202, and a bias sub-circuit 203;
the input end of the microwave amplifying sub-circuit 201 is the input end of the microwave/millimeter wave integrated circuit chip 20, the output end of the microwave amplifying sub-circuit 201 is connected with the input end of the microwave matching sub-circuit 202, the output end of the microwave matching sub-circuit 202 is connected with the output end of the bias sub-circuit 203 and then is used as the output end of the microwave/millimeter wave integrated circuit chip 20, and the input end of the bias sub-circuit 203 is connected with a preset voltage for providing the laser chip 30 with the required voltage and current. The electric signal is input into the microwave amplifying sub-circuit 201, and after the electric signal is amplified by the microwave amplifying sub-circuit 201, the amplified electric signal is subjected to matching processing by the microwave matching sub-circuit 202, and is input into the laser chip 30 in combination with the electric signal input by the bias sub-circuit 203, so that the laser chip 30 outputs an optical signal containing the input electric signal.
The microwave amplifying sub-circuit 201, the microwave matching sub-circuit 202 and the bias sub-circuit 203 together form the microwave/millimeter wave integrated circuit chip 20, and the integrated size and the position of the microwave/millimeter wave integrated circuit chip 20 follow the basic integrated circuit principle by adopting a general CMOS technology. It should be noted that, the microwave/millimeter wave integrated circuit chip 20 may be a PCB board provided with a metal pattern, and then the microwave amplifying sub-circuit 201, the microwave matching sub-circuit 202 and the bias sub-circuit 203 are soldered at corresponding positions to obtain a schematic plan view of the microwave/millimeter wave integrated circuit chip 20 as shown in fig. 4.
The microwave/millimeter wave integrated circuit chip 20 is prepared by adopting a semiconductor (such as GaAs, gaN, si base) integrated circuit process, and can realize the multifunctional circuits of the microwave amplifying sub-circuit 201, the microwave matching sub-circuit 202, the bias sub-circuit 203 and the like of the laser chip 30 and realize the monolithic system integration of the optical and electric signal processing circuits.
The preset voltage input by the bias sub-circuit 203 is used to provide the laser chip 30 with the required voltage and current so that the voltage of the laser chip 30 is at the dead band voltage edge. As shown in fig. 5, the laser chip 30 does not show a linear section of the corresponding volt-ampere characteristic curve at 0V, and after the electric signal input from the input end of the microwave amplifying sub-circuit 201 enters the laser chip 30 through the microwave matching sub-circuit 202, the laser chip 30 can emit an optical signal, and at this time, the voltage of the laser chip 30 enters the linear section from the dead zone voltage. The dead band voltage may range from ±1v.
Alternatively, as shown in fig. 4, the bias sub-circuit 203 may include: capacitance and inductance;
one end of the capacitor is connected with one end of the inductor respectively and then used as an input end of the bias sub-circuit 203, and the other end of the capacitor is grounded; the other end of the inductor serves as the output of the bias subcircuit 203.
In one embodiment, the laser chip 30 may include a light emitting diode.
Wherein the cathode end of the light emitting diode is connected with the output end of the microwave/millimeter wave integrated circuit chip 20, and the anode end of the light emitting diode is grounded. Referring to fig. 4, the cathode terminals of the leds are connected to the output terminal of the microwave matching sub-circuit 202 and the output terminal of the bias sub-circuit 203, respectively.
As shown in fig. 2 and 4, the laser chip 30 may be disposed at an edge position on the silicon-based package circuit 10. For example, the laser chip 30 is disposed at the right edge position on the silicon-based packaging circuit 10, so that the light spot emitted by the inherent emission angle of the laser chip 30 is relatively compact, the light spot is not easily blocked by other devices on the silicon-based packaging circuit 10, and the photo detector chip 50 can also receive almost all light, thereby improving the accuracy of the optical signal detected by the photo detector chip 50 and assisting in realizing accurate control of the output optical power of the laser chip 30.
In one embodiment, the photo-detector chip 50 is a photo-detector with a side sensitive surface, and the sensitive side corresponds to the light emitting position of the laser chip 30 to receive the light signal emitted by the laser chip 30. Referring to fig. 2, the laser beam strikes a side surface of the photodetector chip 50, which is a light-sensitive surface of the photodetector chip 50.
Referring to fig. 4 again, the photo detector chip 50 is further configured to be connected to the control chip 60, the input end of the bias sub-circuit 203 is connected to the control chip 60, the photo detector 50 converts an optical signal output by the laser chip 30 into a feedback electrical signal and sends the feedback electrical signal to the control chip 60, the control chip 60 converts the feedback electrical signal into a digital signal, calculates an output current according to the digital signal and an optical power corresponding to the optical signal of the laser chip 30, inputs the output current into the optical signal sent by the laser chip controlled by the input end of the bias sub-circuit 203, and provides a stable current source for the laser chip 30, so that the voltage of the laser chip 30 is adjusted in a linear region, as shown in fig. 5, so that direct feedback control of the laser chip 30 can be realized, and the optical power output of the laser chip 30 can be precisely controlled.
As shown in fig. 6, the relationship between the current input to the laser chip 30 and the light intensity emitted from the laser chip 30 is schematically shown, and as the current increases, the light intensity emitted from the laser chip 30 increases, and when the input current reaches a certain value, the light intensity corresponding to the light signal emitted from the laser chip 30 gradually stabilizes.
According to the microwave photon integrated direct-tuning laser chip circuit, the silicon-based packaging circuit and the design method of photoelectric isomerism integration are adopted, the microwave/millimeter wave integrated circuit chip, the laser chip and the collimating lens are integrated on the silicon-based packaging circuit, the photoelectric detector chip is integrated on the microwave/millimeter wave integrated circuit chip, the collimating lens is utilized to convert the optical signals output by the laser chip into parallel optical signals, chip-level packaging of an optical device, the collimating lens and the microwave/millimeter wave integrated circuit is realized, the problem that the divergence angle of the optical signals output by the laser chip is large is solved, and then the single-chip integrated system with good collimating effect and convenient use is formed. Because the volume of each chip is small, the volume of the integrated microwave photon integrated direct-tuning laser chip is also smaller, so that the integration degree of the device is improved compared with a high-speed direct-tuning semiconductor laser with a discrete device assembly structure in the prior art, and the divergent light emitted by the laser chip is changed into parallel light, so that the microwave photon integrated direct-tuning laser chip is convenient to use. Meanwhile, the laser chip is arranged at the edge of the silicon-based packaging circuit, and a photoelectric detector chip with photosensitive side faces is adopted, so that the accuracy of optical signals detected by the photoelectric detector chip is improved, and the accurate control of the output optical power of the laser chip is realized in an auxiliary manner.
It should be understood that the sequence number of each step in the foregoing embodiment does not mean that the execution sequence of each process should be determined by the function and the internal logic, and should not limit the implementation process of the embodiment of the present invention.
The embodiment of the invention also provides a laser, which comprises the microwave photon integrated direct-tuning laser chip circuit provided by any embodiment, and has the beneficial effects brought by the microwave photon integrated direct-tuning laser chip circuit provided by any embodiment.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.
Claims (9)
1. A microwave photon integrated direct modulation laser chip circuit, comprising: the device comprises a silicon-based packaging circuit, a microwave/millimeter wave integrated circuit chip, a laser chip, a collimating lens and a photoelectric detector chip;
the microwave/millimeter wave integrated circuit chip, the laser chip and the collimating lens are arranged on the silicon-based packaging circuit, and the photoelectric detector chip is arranged on the microwave/millimeter wave integrated circuit chip; the silicon-based packaging circuit is prepared by adopting a micron-nanometer semiconductor process;
the input end of the microwave/millimeter wave integrated circuit chip is used for receiving the electric signals, and the output end of the microwave/millimeter wave integrated circuit chip is used for outputting the processed electric signals;
the laser chip is connected with the output end of the microwave/millimeter wave integrated circuit chip and is used for converting the received processed electric signals into optical signals for output;
the collimating lens is used for converting the optical signals output by the laser chip into parallel optical signals;
the photoelectric detector chip corresponds to the setting position of the laser chip and is used for receiving the optical signal output by the laser chip, converting the optical signal into a digital electric signal and carrying out feedback control on the laser chip through the microwave/millimeter wave integrated circuit chip according to the digital electric signal.
2. The microwave photonic integrated direct-tuning laser chip circuit of claim 1, wherein the collimating lens is disposed at a preset position after the laser chip outputs the optical signal, and the preset position is a position where the optical power of the optical signal output by the laser chip is maximum and the light spot is minimum.
3. The microwave photonic integrated direct-tuning laser chip circuit of claim 1, wherein the collimating lens is an aspheric lens designed according to a divergence angle of the laser chip in the sagittal direction and a divergence angle of the meridional direction.
4. The microwave photonic integrated direct tuning laser chip circuit of claim 1, wherein the microwave/millimeter wave integrated circuit chip, the laser chip, the collimating lens and the silicon-based packaging circuit, and the photodetector chip and the microwave/millimeter wave integrated circuit chip are connected by means of gold-tin alloy soldering, jin Jinjian bonding, micro bump preparation or flip chip soldering.
5. The microwave photon integrated direct modulation laser chip circuit according to claim 1, wherein the photodetector chip is a side-sensitive photodetector, and the sensitive side corresponds to the light emitting position of the laser chip to receive the light signal emitted by the laser chip.
6. The microwave photonic integrated direct tuning laser chip circuit of any one of claims 1-5, wherein the microwave/millimeter wave integrated circuit chip comprises: a microwave amplifying sub-circuit, a microwave matching sub-circuit and a biasing sub-circuit;
the input end of the microwave amplifying sub-circuit is the input end of the microwave/millimeter wave integrated circuit chip, the output end of the microwave amplifying sub-circuit is connected with the input end of the microwave matching sub-circuit, the output end of the microwave matching sub-circuit is connected with the output end of the bias sub-circuit and then is used as the output end of the microwave/millimeter wave integrated circuit chip, and the input end of the bias sub-circuit is connected with a preset voltage for providing the laser chip with required voltage and current.
7. The microwave photonic integrated direct-tuning laser chip circuit of claim 6, wherein the bias sub-circuit comprises: capacitance and inductance;
one end of the capacitor is respectively connected with one end of the inductor and then used as an input end of the bias subcircuit, and the other end of the capacitor is grounded;
the other end of the inductor is used as the output end of the bias sub-circuit.
8. The microwave photon integrated direct-tuning laser chip circuit of claim 6, wherein the photodetector chip is further configured to be connected to a control chip, an input end of the bias sub-circuit is connected to the control chip, the photodetector chip converts an optical signal output by the laser chip into a feedback electrical signal and sends the feedback electrical signal to the control chip, the control chip converts the feedback electrical signal into a digital signal, calculates an output voltage according to the digital signal and an optical power corresponding to the optical signal of the laser chip, and inputs the output voltage to an input end of the bias sub-circuit.
9. A laser comprising a microwave photonic integrated direct-tuning laser chip circuit as claimed in any one of claims 1 to 8.
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