CN111146669A - On-chip integrated double-ring photoelectric oscillator - Google Patents
On-chip integrated double-ring photoelectric oscillator Download PDFInfo
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- CN111146669A CN111146669A CN201811309863.1A CN201811309863A CN111146669A CN 111146669 A CN111146669 A CN 111146669A CN 201811309863 A CN201811309863 A CN 201811309863A CN 111146669 A CN111146669 A CN 111146669A
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Abstract
The present disclosure provides an on-chip integrated dual-ring optoelectronic oscillator comprising an optical loop and an electrical loop; the optical loop includes: the optical fiber delay line comprises a directly modulated laser, a first optical coupler, a first optical waveguide delay line, a second optical coupler and a photoelectric detector; the direct modulation laser outputs laser signals under the drive of direct current and feedback current; the optical waveguide delay lines are divided into two beams with different lengths through a first optical coupler to jointly select a mode, so that side modes are inhibited from being generated; the optical signal is received to the photoelectric detector through the second optical coupler and converted into an electric signal, so that the electric signal is input to the electric loop; after amplification and filtering, most microwave power is output, and a small part of microwave power is fed back and injected into the semiconductor direct-modulation laser to form a stable oscillation loop and output a microwave signal with low phase noise. The photoelectric hybrid integrated photoelectric oscillator has the advantages that the photoelectric hybrid integrated on the chip is integrated, the weight and the size of the photoelectric oscillator are reduced, the independent and complex peripheral power supply system is reduced, and the large-scale application in the field of aviation is facilitated.
Description
Technical Field
The disclosure relates to the technical field of microwave photonics, in particular to an on-chip integrated double-ring photoelectric oscillator.
Background
The high-purity microwave signal is greatly applied to the military and civil fields, is widely applied to a radar system, a detection system, an electronic countermeasure system and a communication system, and has great research value and application value. Photonics-based methods generate microwaves, which can produce high-purity microwave signals of high frequency and low phase noise. Among them, an Optical Electrical Oscillator (OEO) is widely studied because it can generate a microwave signal and an ultra-low phase noise. The phase noise of a traditional crystal oscillator frequency-doubled microwave signal of 10GHz has-118 dBc/Hz @10kHz, and the phase noise of military-grade OEO can reach-140 dBc/Hz @10 kHz. The reduction of the phase noise of the microwave source has a very positive effect on the whole system.
The traditional double-ring OEO is mainly built by discrete devices, two coils of long single-mode optical fibers are used as double rings in an optical loop part to inhibit the generation of system side modes, and the OEO is kept to be capable of starting oscillation in a single mode. The traditional double-ring OEO signal source adopts a mode of adding modulation to a directly modulated laser and a laser source, an optical coupler also adopts a separate polarization beam splitter and a beam combiner, and the whole link also needs to use a polarization controller to regulate and control the polarization state of light. The whole system is complex and large in volume.
In conclusion, the traditional double-ring OEO has larger volume and is not beneficial to being used in the fields of airborne radar and aviation; because discrete devices are adopted, a plurality of independent power supplies are needed to supply power to the whole system, and the system is greatly complicated; the double ring adopts a long optical fiber as an optical transmission medium, and the temperature sensitivity and the vibration sensitivity of the optical fiber greatly limit the performance of the system in a complex environment.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides an integrated double-ring optoelectronic oscillator on a chip to at least partially solve the technical problems set forth above.
(II) technical scheme
According to an aspect of the present disclosure, there is provided an on-chip integrated dual-ring optoelectronic oscillator, including: an optical loop and an electrical loop; the optical loop includes: the optical fiber delay line comprises a directly modulated laser, a first optical coupler, a first optical waveguide delay line, a second optical coupler and a photoelectric detector;
the directly modulated laser outputs a modulated laser signal; the laser signal is split into a first optical waveguide delay line and a second optical waveguide delay line through a first optical coupler; then the light beams are combined to a photoelectric detector through a second optical coupler; and the photoelectric detector converts the optical signal into an electric signal and then injects the electric signal into the electric loop, and the electric signal is output to the direct modulation laser and/or direct microwave output through the electric loop.
In some embodiments of the present disclosure, the first optical waveguide delay line and the second optical waveguide delay line are two optical waveguide delay lines with different lengths, and perform common mode selection.
In some embodiments of the present disclosure, the final start-up mode spacing of the first optical waveguide delay line and the second optical waveguide delay line is the least common multiple of the start-up mode spacing of the first optical waveguide delay line and the second optical waveguide delay line.
In some embodiments of the present disclosure, the electrical loop comprises: a first biaser, an electrical amplifier, an electrical filter, an electrical coupler, and a second biaser; receiving an electric signal output by the photoelectric detector, wherein the electric signal sequentially passes through a first biaser, an electric amplifier and an electric filter; and then the electric coupler outputs the electric signal to the second biaser and/or directly microwave, and the electric signal is injected into the direct-modulated laser.
In some embodiments of the present disclosure, the optical loop is made for an indium phosphide photonic integration platform based semiconductor process.
In some embodiments of the present disclosure, the output power of the directly tuned laser is 0dBm and the modulation bandwidth is 30 GHz.
In some embodiments of the present disclosure, the first and second optical couplers are directional couplers based on evanescent coupling and/or multimode interference couplers based on multimode interference effects.
In some embodiments of the present disclosure, the electrical loop is integrated on an aluminum nitride substrate/printed circuit board, and an external power plug interface is left.
In some embodiments of the present disclosure, the electrical filter is a band pass filter for ensuring that the optoelectronic oscillator is single mode.
In some embodiments of the present disclosure, the amount of microwave signal directly output in the electrical filter is greater than the amount of microwave signal fed back into the directly tuned laser.
(III) advantageous effects
According to the technical scheme, the on-chip integrated double-ring optoelectronic oscillator disclosed by the invention has at least one or part of the following beneficial effects:
(1) by on-chip photoelectric hybrid integration, the weight and the volume of the photoelectric oscillator are greatly reduced, a single complex peripheral power supply system is reduced, and the large-scale application in the aviation field is facilitated.
(2) Based on the photonic link and the device integrated on the chip, the optical waveguide delay line is used for replacing a long single-mode optical fiber adopted in the traditional double-ring photoelectric oscillator, so that the stability of the system is improved, and the working performance of the system under extreme conditions is ensured.
(3) Two paths of optical waveguide delay lines with different lengths are selected together, and the generation of partial side modes can be effectively inhibited.
(4) Most of microwave power in the electrical loop is output as an output signal of the chip, and a small part of feedback injection value directly-modulated lasers are modulated and arranged, so that a stable oscillation loop can be formed, and the phase noise of the output microwave signals can be reduced.
Drawings
Fig. 1 is a schematic structural diagram of an on-chip integrated dual-ring optoelectronic oscillator according to an embodiment of the disclosure.
Fig. 2 is a schematic diagram illustrating a mode selection principle of a double-ring optical waveguide delay line of an on-chip integrated double-ring optoelectronic oscillator according to an embodiment of the disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
1-a directly modulated laser; 2-a first optical coupler;
3-a first optical waveguide delay line; 4-a second optical waveguide delay line;
5-a second optical coupler; 6-a photodetector;
7-a first biaser; 8-an electrical amplifier;
9-an electrical filter; 10-an electrical coupler;
11-second biaser.
Detailed Description
The present disclosure provides an on-chip integrated dual-ring optoelectronic oscillator comprising an optical loop and an electrical loop; the optical loop includes: the optical fiber delay line comprises a directly modulated laser, a first optical coupler, a first optical waveguide delay line, a second optical coupler and a photoelectric detector; the direct modulation laser outputs laser signals under the drive of direct current and feedback current; the optical waveguide delay lines are divided into two beams with different lengths through a first optical coupler to jointly select a mode, so that side modes are inhibited from being generated; the optical signal is received to the photoelectric detector through the second optical coupler and converted into an electric signal, so that the electric signal is input to the electric loop; after amplification and filtering, most microwave power is output, and a small part of microwave power is fed back and injected into the semiconductor direct-modulation laser to form a stable oscillation loop and output a microwave signal with low phase noise. The photoelectric hybrid integrated photoelectric oscillator has the advantages that the photoelectric hybrid integrated on the chip is integrated, the weight and the size of the photoelectric oscillator are reduced, the independent and complex peripheral power supply system is reduced, and the large-scale application in the field of aviation is facilitated.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In a first exemplary embodiment of the present disclosure, an integrated dual ring optoelectronic oscillator on a chip is provided. Fig. 1 is a schematic structural diagram of an on-chip integrated dual-ring optoelectronic oscillator according to an embodiment of the disclosure. As shown in fig. 1, the on-chip integrated dual-ring optoelectronic oscillator of the present disclosure includes: an optical loop and an electrical loop; the optical loop includes: the device comprises a directly modulated laser 1, a first optical coupler 2, a first optical waveguide delay line 3, a second optical waveguide delay line 4, a second optical coupler 5 and a photoelectric detector 6; the direct modulation laser 1 outputs modulated continuous laser signals under direct current drive and feedback current drive, and has the characteristics of high power and large broadband. The laser signal is split into a first optical waveguide delay line 3 and a second optical waveguide delay line 4 through a first optical coupler 2, and then is combined to a photoelectric detector 6 through a second optical coupler 5. Further, the first optical coupler 2 and the second optical coupler 5 have an equal power splitting ratio. The photoelectric detector 6 converts the optical signal into an electrical signal and injects the electrical signal into the electrical loop, and the electrical signal is output to the directly modulated laser 1 and/or direct microwave output through the electrical loop.
In a specific embodiment, the first optical waveguide delay line 3 and the second optical waveguide delay line 4 are two optical waveguide delay lines with different lengths, and the mode selection is performed together, so that the generation of a part of side modes can be effectively inhibited. Specifically, the final oscillation starting mode interval of the first optical waveguide delay line 3 and the second optical waveguide delay line 4 is the least common multiple of the oscillation starting mode intervals of two different optical waveguide delay lines. Fig. 2 is a schematic diagram illustrating a mode selection principle of a double-ring optical waveguide delay line of an on-chip integrated double-ring optoelectronic oscillator according to an embodiment of the disclosure. As shown in fig. 2, the longitudinal mode spacing a obtained by two optical waveguide delay lines of different lengths is wider than the longitudinal mode spacing B obtained by two optical waveguide delay lines of the same length.
In a specific embodiment, the electrical loop comprises: a first biaser 7, an electrical amplifier 8, an electrical filter 9, an electrical coupler 10 and a second biaser 11; receiving the electric signal output by the photodetector 6, and sequentially passing through the first biaser 7, the electric amplifier 8 for amplification and the electric filter 9 for filtering; and then the electric coupler 10 outputs most of the microwave power as the output signal of the chip, and a small part of the feedback injection value directly modulates the laser 1 to form a stable oscillation loop and output the microwave signal with low phase noise.
Optionally, all devices in the optical loop are made by a semiconductor process such as photolithography, doping, sputtering and the like based on an indium phosphide photon integration platform, and the integration level is high. The output power of the directly modulated laser 1 is 0dBm, and the modulation bandwidth is 30 GHz.
Alternatively, the first optical coupler 2 and the second optical coupler 5 are directional couplers based on evanescent wave coupling, multimode interference couplers based on multimode interference effect, or other optical couplers having a light splitting action. The electric loop is integrated on the aluminum nitride substrate/the printed circuit board, and an external power supply plug interface is reserved.
The following describes each component of the on-chip integrated dual-ring optoelectronic oscillator of the present embodiment in detail.
The direct-modulated laser 1 outputs a modulated laser signal at a dc bias and feedback electric signal.
The first optical coupler 2 and the second optical coupler 5 perform beam splitting and beam summing functions on the light in the optical loop part, and ensure that the light is combined and output after being split into two sections of optical waveguide delay lines.
The interval of the final oscillation starting modes of the first optical waveguide delay line 3 and the second optical waveguide delay line 4 is the least common multiple of the interval of the oscillation starting modes of the two different delay lines. The high side mode suppression ratio of the whole loop is ensured, and the single-mode oscillation of the photoelectric oscillator is realized.
The photodetector 6 converts the light into an electrical signal and injects the electrical signal into the electrical loop, so as to connect the optical loop and the electrical loop.
The first biaser 7 and the second biaser 11 mix the feedback signal of the photoelectric detector 6 with the external direct current signal and input the feedback signal into the electric amplifier 8, and the feedback signal obtains gain to ensure that the photoelectric detector works normally.
And the electric amplifier 8 is used for amplifying the electric signal fed back by the loop.
And the electric filter 9 is used for filtering the oscillating frequency through the band-pass characteristic and ensuring the single-mode oscillation starting of the photoelectric oscillator.
The electric coupler 10 has an unequal power splitting ratio, most microwave power is output as an output signal of the chip, and a small part of feedback injection value directly-modulated laser is modulated to realize feedback injection of a loop electric signal and microwave output with low phase noise.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Furthermore, the above definitions of the various elements and methods are not limited to the particular structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by one of ordinary skill in the art, for example:
the directly modulated semiconductor laser in the optical loop can be replaced by a combination of a single-wavelength laser and an external modulator as long as the output and feedback modulation of continuous light can be realized;
more optical filters are added in the optical loop to further inhibit the generation of side modes;
more electrical amplifiers or attenuators are added to control the strength of the signal.
The attached drawings are simplified and are for illustrative purposes, the number, shape and size of the devices shown in the drawings may be modified according to actual circumstances, and the configuration of the devices may be more complicated.
From the above description, those skilled in the art should clearly recognize that the on-chip integrated dual-ring optoelectronic oscillator of the present disclosure is provided.
In summary, the photoelectric hybrid integrated circuit greatly reduces the weight and the volume of the photoelectric oscillator, reduces an independent and complex peripheral power supply system, and is more beneficial to large-scale application in the field of aviation.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term [ about ]. Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. An integrated double-ring on-chip optoelectronic oscillator comprising: an optical loop and an electrical loop; the optical loop includes: the optical fiber delay line comprises a directly modulated laser, a first optical coupler, a first optical waveguide delay line, a second optical coupler and a photoelectric detector;
the directly modulated laser outputs a modulated laser signal; the laser signal is split into a first optical waveguide delay line and a second optical waveguide delay line through a first optical coupler; then the light beams are combined to a photoelectric detector through a second optical coupler; and the photoelectric detector converts the optical signal into an electric signal and then injects the electric signal into the electric loop, and the electric signal is output to the direct modulation laser and/or direct microwave output through the electric loop.
2. The on-chip integrated dual-ring optoelectronic oscillator of claim 1, wherein the first optical waveguide delay line and the second optical waveguide delay line are two optical waveguide delay lines with different lengths, and common mode selection is performed.
3. The on-chip integrated dual ring optoelectronic oscillator of claim 2, wherein a final start-up mode spacing of the first and second optical waveguide delay lines is a least common multiple of the start-up mode spacing of the first and second optical waveguide delay lines.
4. The integrated on-chip dual-ring optoelectronic oscillator of claim 1, wherein the electrical loop comprises: a first biaser, an electrical amplifier, an electrical filter, an electrical coupler, and a second biaser; receiving an electric signal output by the photoelectric detector, wherein the electric signal sequentially passes through a first biaser, an electric amplifier and an electric filter; and then the electric coupler outputs the electric signal to the second biaser and/or directly microwave, and the electric signal is injected into the direct-modulated laser.
5. The on-chip integrated dual ring optoelectronic oscillator of claim 1, wherein the optical loop is fabricated for an indium phosphide photonic integrated platform based semiconductor process.
6. The integrated on-chip dual ring optoelectronic oscillator of claim 1, wherein the output power of the directly tuned laser is 0dBm and the modulation bandwidth is 30 GHz.
7. The on-chip integrated dual ring optoelectronic oscillator of claim 1, wherein the first and second optical couplers are evanescent coupling based directional couplers and/or multimode interference couplers based on multimode interference effects.
8. The integrated on-chip dual ring optoelectronic oscillator of claim 1, wherein the electrical loop is integrated on an aluminum nitride substrate/printed circuit board leaving an external power plug interface.
9. The integrated on-chip dual-ring optoelectronic oscillator of claim 4, wherein the electrical filter is a band pass filter for ensuring that the optoelectronic oscillator is single mode.
10. The on-chip integrated dual ring optoelectronic oscillator of claim 4, wherein the amount of microwave signal directly output in the electrical filter is greater than the amount of microwave signal fed back into the directly tuned laser.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112147628A (en) * | 2020-08-25 | 2020-12-29 | 电子科技大学 | Remote displacement measuring device and measuring method based on photoelectric oscillator |
| CN113839297A (en) * | 2021-09-08 | 2021-12-24 | 电子科技大学 | Photoelectric oscillator based on injection locking effect |
| CN114172017A (en) * | 2021-12-06 | 2022-03-11 | 中国电子科技集团公司第十三研究所 | Microwave photon integrated direct modulation laser chip circuit and laser |
| CN114188817A (en) * | 2021-12-06 | 2022-03-15 | 中国电子科技集团公司第十三研究所 | Microwave photon integrated direct modulation laser chip circuit and laser |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752940A (en) * | 2013-12-27 | 2015-07-01 | 北京邮电大学 | Photoelectric oscillator |
| CN104934840A (en) * | 2015-06-25 | 2015-09-23 | 北京无线电计量测试研究所 | Microwave oscillator based on sapphire filter |
| CN105027471A (en) * | 2012-12-28 | 2015-11-04 | 协同微波公司 | Self-injection locking phase-locked loop optoelectronic oscillator |
| CN105261914A (en) * | 2015-10-27 | 2016-01-20 | 中国电子科技集团公司第三十八研究所 | Ultra-narrowband low-noise optoelectronic oscillator |
| CN107946877A (en) * | 2017-12-08 | 2018-04-20 | 华中科技大学 | A kind of bicyclic optical-electronic oscillator stablized from polarization state |
| CN108183380A (en) * | 2018-01-05 | 2018-06-19 | 中国科学院半导体研究所 | Integrated electro oscillator |
| CN108731789A (en) * | 2018-07-30 | 2018-11-02 | 中国海洋大学 | Underwater Detection device based on optical-electronic oscillator |
-
2018
- 2018-11-05 CN CN201811309863.1A patent/CN111146669A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105027471A (en) * | 2012-12-28 | 2015-11-04 | 协同微波公司 | Self-injection locking phase-locked loop optoelectronic oscillator |
| CN104752940A (en) * | 2013-12-27 | 2015-07-01 | 北京邮电大学 | Photoelectric oscillator |
| CN104934840A (en) * | 2015-06-25 | 2015-09-23 | 北京无线电计量测试研究所 | Microwave oscillator based on sapphire filter |
| CN105261914A (en) * | 2015-10-27 | 2016-01-20 | 中国电子科技集团公司第三十八研究所 | Ultra-narrowband low-noise optoelectronic oscillator |
| CN107946877A (en) * | 2017-12-08 | 2018-04-20 | 华中科技大学 | A kind of bicyclic optical-electronic oscillator stablized from polarization state |
| CN108183380A (en) * | 2018-01-05 | 2018-06-19 | 中国科学院半导体研究所 | Integrated electro oscillator |
| CN108731789A (en) * | 2018-07-30 | 2018-11-02 | 中国海洋大学 | Underwater Detection device based on optical-electronic oscillator |
Non-Patent Citations (2)
| Title |
|---|
| 罗莎: ""高精度光延迟线设计及应用研究"", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 郑俊超: ""低相噪光电振荡器关键技术研究"", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112147628A (en) * | 2020-08-25 | 2020-12-29 | 电子科技大学 | Remote displacement measuring device and measuring method based on photoelectric oscillator |
| CN112147628B (en) * | 2020-08-25 | 2023-06-09 | 电子科技大学 | Remote displacement measuring device and method based on photoelectric oscillator |
| CN113839297A (en) * | 2021-09-08 | 2021-12-24 | 电子科技大学 | Photoelectric oscillator based on injection locking effect |
| CN114172017A (en) * | 2021-12-06 | 2022-03-11 | 中国电子科技集团公司第十三研究所 | Microwave photon integrated direct modulation laser chip circuit and laser |
| CN114188817A (en) * | 2021-12-06 | 2022-03-15 | 中国电子科技集团公司第十三研究所 | Microwave photon integrated direct modulation laser chip circuit and laser |
| CN114172017B (en) * | 2021-12-06 | 2024-01-30 | 中国电子科技集团公司第十三研究所 | Microwave photon integrated direct-tuning laser chip circuit and laser |
| CN114188817B (en) * | 2021-12-06 | 2024-01-30 | 中国电子科技集团公司第十三研究所 | Microwave photon integrated direct-tuning laser chip circuit and laser |
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Application publication date: 20200512 |