CN108183380A - Integrated electro oscillator - Google Patents
Integrated electro oscillator Download PDFInfo
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- CN108183380A CN108183380A CN201810013244.1A CN201810013244A CN108183380A CN 108183380 A CN108183380 A CN 108183380A CN 201810013244 A CN201810013244 A CN 201810013244A CN 108183380 A CN108183380 A CN 108183380A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
A kind of integrated electro oscillator, including：The output terminal connection of the second bias device in one opto chip and an electronic chip, the wherein input terminal and electronic chip of the electrical to optical converter in opto chip；The input terminal connection of the first bias device in the output terminal and electronic chip of photodetector in the opto chip；The opto chip and electronic chip are produced in a thermal-conductivity substrate.The present invention is used to microwave system and provides high-frequency, the general purity of high frequency, low phase noise, small size, inexpensive stability microwave signal source.The integrated electro oscillator, by the way that opto-electronic device is integrated on indium phosphide opto chip, electronic device is integrated in silicon substrate or printed circuit board, forming circuit is combined both finally by the mode of gold wire bonding, and it is fixed on same heat conduction base, it is achieved thereby that optical-electronic oscillator is integrated, minimize, reduce the cost of microwave signal source.
Description
Technical field
The invention belongs to integrated micro photon technology fields, and in particular to a kind of integrated electro oscillator more particularly to one
Kind provides high-frequency, low phase noise, the high-frequency microwave signal source of the integrated low cost of high spectral purity for microwave system.
Technical background
With the arriving of information age, in civil field or military field, demand of the human society to information is in
Reveal explosive growth state, it is growing day by day to the dependence of information.Microwave system, the exactly indispensable weight of this information-intensive society
Want hardware foundation.No matter communicating, sensing, the civil fields such as medical treatment are still in military affairs such as satellite communication, radar, electronic countermeasures
Field, microwave technology play important supportive effect.From the viewpoint of signal generation, microwave signal source is that all are micro-
The basis of wave technology application and precondition.It is high especially when current communication system and radar system face huge challenge
Frequency, high spectral purity, the microwave signal source of low phase noise are particularly important.At present, high performance microwave signal source master
It to be based on dielectric oscillator or crystal oscillator and generate microwave signal as energy-storage units.However, when these devices are in gigahertz (GHZ)
When hereby frequencies above works, the microwave signal quality of output will acutely reduce due to the Q values of energy storage device decline, it is difficult to generate
High-frequency, the microwave signal of low phase noise.
Above-mentioned contradiction can effectively be solved by combining the optical-electronic oscillator of photonic propulsion advantage, it is considered to be one kind has prospect very much
High-frequency microwave signal source.It is with following items outstanding advantages：It (1), can with reference to the low-loss advantage of the big bandwidth of photonic propulsion
The microwave signal of high-frequency (tens girz) is generated, and with the higher purity of frequency spectrum and ultralow phase noise；(2) it ties
Structure is flexible, restructural.By the change of structure, it can be achieved that frequency tuning, comb frequencies generation etc..And the speciality of its optoelectronic oscillation
It can easily merge into existing fiber communication system and light sensing network.At present, such as multiloop optical-electronic oscillator,
Manifold type optical-electronic oscillator, the optical-electronic oscillator of Rayleigh scattering auxiliary, pouring-in optical-electronic oscillator and tunable optical electric oscillation
Device has been reported.However, these optical-electronic oscillators are both needed to use long-distance optical fiber (several kilometers) low as energy-storage travelling wave tube realization
Phase noise, thus increase the unstability of system.On the other hand, discrete device often brings large volume, big weight, Gao Cheng
This problem of, it is difficult to realize commercialization.
In recent years, with the development of integrated photonics, the laser needed for such as optical-electronic oscillator, modulator, detector,
Energy-storage units etc. can realize that on piece integrates.Thus make it possible succession optical-electronic oscillator.At present involved by integrated photonics
And material mainly have a materials such as silicon, silicon nitride, silica, aluminium nitride, indium phosphide, wherein silicon nitride, silica, nitridation
Aluminium, since its material property is difficult to realize active integrate.Though can realize modulator and detector on silicon, there is presently no available
Integrated optical source be developed.Thus, indium phosphide is selection best at present, can be by the light needed for all optical-electronic oscillators
Electronic device realizes single-chip integration.The size of optical-electronic oscillator is substantially reduced so as to play its integrated advantage, weight
And cost.And on the other hand, the electronics of microwave device is integrated already in silicon substrate maturation.The advantage of the two is thus played, is passed through
The two is merged in encapsulation, is the important path for realizing miniaturization photo-electricity oscillator.
This integrated electro oscillator proposed by the present invention, has given full play to the advantage of indium phosphorus optoelectronic intagration, has passed through spiral shell
The optical waveguide for revolving shape replaces long optical fibers to realize energy storage, so as to substantially reduce the unstability of output signal.Meanwhile by will be electric
Sub- chip is packaged in opto chip on same heat-conducting substrate, substantially reduces device size, and can play integrated advantage,
The cost of optical-electronic oscillator is reduced, it is very commercially valuable.
Invention content
The present invention proposes a kind of integrated electro oscillator, for providing high-frequency, the general purity of high frequency, low phase for microwave system
Position noise, small size, inexpensive stability microwave signal source.The integrated electro oscillator, by the way that opto-electronic device is integrated in
On indium phosphide opto chip, electronic device is integrated in silicon substrate or printed circuit board, finally by gold wire bonding
Mode combines both forming circuit, and is fixed on same heat conduction base, it is achieved thereby that optical-electronic oscillator is integrated
Change, miniaturization, reduce the cost of microwave signal source.
The present invention provides a kind of integrated electro oscillator, including：
One opto chip includes：
One electrical to optical converter；
The output terminal connection of one smooth delay unit, input terminal and electrical to optical converter；
One photo-coupler, input port 1 are connect with the output terminal of light delay unit, and the port 3 of the photo-coupler is light
Output terminal；
The output port 2 of one photodetector, input terminal and photo-coupler connects；
One electronic chip includes：
One first bias device；
One microwave amplifier, input terminal are connect with the output terminal of the first bias device；
The output terminal connection of one tunable electric delay line, input terminal and microwave amplifier；
One microwave filter, input terminal are connect with the output terminal of tunable electric delay line；
One first electric power splitter, input port 1 are connect with the output terminal of microwave filter, the port 3 of the electricity power splitter
For microwave output terminal；
One microwave phase shifter, input terminal are connect with the output port 2 of the first electric power splitter；
The output terminal connection of one second bias device, input terminal and microwave phase shifter；
The output terminal of the second bias device in the input terminal and electronic chip of electrical to optical converter wherein in opto chip
Connection；The input terminal connection of the first bias device in the output terminal and electronic chip of photodetector in the opto chip；
The opto chip and electronic chip are produced in a thermal-conductivity substrate.
Integrated electro oscillator proposed by the present invention has the advantages that：
1. by the way that all photoelectric devices and microwave device are integrated on chip in an integrated fashion, so as to greatly reduce
Volume, weight and the cost of optical-electronic oscillator system.
2. shorter loop-length so that the free spectrum width of optical-electronic oscillator resonance is very big, so as to reduce to micro-
The requirement of wave filter bandwidth is easy to implement single mode starting of oscillation, improves the general purity of frequency.
3. long light is replaced to realize loop energy-storage with screw type optical waveguide, with reference to integrated advantage, system is substantially increased
The stability of link.
Description of the drawings
Understand for ease of those of ordinary skill in the art and implement the present invention, below in conjunction with the accompanying drawings and specific embodiment pair
The present invention is described in further detail as rear, wherein：
Fig. 1 is the structure diagram of integrated electro oscillator of the present invention；
Fig. 2 is the structure diagram that the present invention forms electrical to optical converter using single-frequency laser 1a and electrooptic modulator 1b；
Fig. 3 is the helix waveguide schematic diagram of the present invention；
Fig. 4 double loop light delay unit schematic diagrames；
Fig. 5 is two-way tunable microwave intensity attenuators' schematic diagram；
Fig. 6 is resonance micro-loop time-delay structure schematic diagram；
Specific embodiment
Refering to Figure 1, the present invention provides a kind of integrated electro oscillator, including：
One opto chip A includes：
One electrical to optical converter 1, the electrical to optical converter 1 are directly modulated lasers or are single-frequency laser power-up optical modulator；
One smooth delay unit 3, input terminal are connect with the output terminal of electrical to optical converter 1, and the smooth delay unit 3 is single channel
Spiral helicine indium phosphorus based optical waveguide or the spiral helicine indium phosphorus based optical waveguide of two-way；
One photo-coupler 4, input port 1 are connect with the output terminal of light delay unit 3, and the port 3 of the photo-coupler 4 is
Light output end；
One photodetector 5, input terminal are connect with the output port 2 of photo-coupler 4, and the photodetector 5 is indium
The high-speed of phosphorus base, high-responsivity photodetector；
One electronic chip B includes：
One first bias device 6；
One microwave amplifier 7, input terminal are connect with the output terminal of the first bias device 6；
One tunable electric delay line 8, input terminal are connect with the output terminal of microwave amplifier 7, the tunable electric delay
The single channel tunable microwave intensity attenuators or two-way tunable microwave intensity attenuators that line 8 is integrated on piece, main function
It is the loss in tuned resonance loop, reduces subsequent device nonlinear effect, is exported so as to fulfill optimal microwave；
One microwave filter 9, input terminal are connect with the output terminal of tunable electric delay line 8, and the microwave filter 9 is
Flat-top filter, for filtering out the microwave frequency of single resonance；
One first electric power splitter 10, input port 1 are connect with the output terminal of microwave filter 9, the electricity power splitter 10
Port 3 is microwave output terminal；
One microwave phase shifter 11, input terminal are connect with the output port 2 of the first electric power splitter 10；
One second bias device 12, input terminal are connect with the output terminal of microwave phase shifter 11；
The input terminal of electrical to optical converter 1 in wherein opto chip A is defeated with the second bias device 12 in electronic chip B
Outlet connects；The output terminal of photodetector 5 in opto chip A and the input of the first bias device 6 in electronic chip B
End connection；
Opto chip A and electronic chip B is produced in a thermal-conductivity substrate 13.
As shown in figure 3, light delay unit 3 is made of spiral optical waveguide, can be cascade form, to realize most
The link energy storage of limits.
The course of work of the integrated electro oscillator is that microwave signal is modulated onto through electrical to optical converter 1 on light carrier, is adjusted
The optical signal of system is sent into photodetector 5 through photo-coupler 4 after the transmission of light delay unit 3 and carries out opto-electronic conversion.Photodetection
The microwave signal that device 5 obtains is sent into the microwave tune of electrical to optical converter 1 after the amplification of microwave amplifier 7 and microwave filter 9 filter
Port processed forms closed loop.When loop overall gain be more than loop in loss when, can self-oscillation generate high quality it is micro-
Wave signal.
Preferably, electrical to optical converter can be single-frequency laser 1a and electrooptic modulator 1b, instead of directly modulated lasers, to carry
The performance of high system, as shown in Figure 2.
Preferably, as shown in Figure 4, double loop light delay unit can be used to form double loop optical-electronic oscillator and stablizes frequency
Rate reduces phase noise.The optical signal exported from electrical to optical converter 1 is divided into after two-way to be prolonged all the way into light delay unit 3a
When, another way entering light delay unit 3b is into line delay, and finally by combining, a part of signal light output, another part enters light
5 beat frequency of electric explorer.Double loop optical-electronic oscillator can preferably inhibit mode hopping, realize the reduction of phase noise.
Preferably, as shown in Figure 5, tunable delay line can formed using two-way tunable microwave intensity attenuators
8, i.e. signal is delayed by that will be divided into two-way through electric power splitter 81 after electric amplifier 7 by electrical attenuator 82,86 and electricity respectively
After device 83,85, then it is combined by electric power splitter 84 and inputs microwave filter 9 all the way.It is connected between device by microwave coplanar waveguide.
In this way, the gain size of photoelectricity linkage length and each circuit can be fine-tuned, so as to fulfill more complicated
Microwave oscillator.
Preferably, the resonance micro-loop time-delay structure that light delay unit 3 may alternatively be as shown in Figure 6 carries out energy storage
It deposits.Further, in order to improve energy storage capacity, which can be in other materials substrate (such as silica, silicon nitride
Deng) on complete, then by way of optical coupling with front end electrical to optical converter 1, rear end photo-coupler 4 connects, and finally realizes humorous
Shake circuit.
In addition, the above-mentioned definition to each element and method be not limited in the various concrete structures mentioned in embodiment,
Shape or mode, those of ordinary skill in the art can add or replace to its structure with simply being known, such as：Light is delayed
Unit 3 can be various shapes, and may alternatively be mode of resonance delay unit.Laser can be changed to laser outside piece by piece
Device.Feedback circuit can be added by the output phase demodulation feedback control phase shifter 11 with integrated electro oscillator, make optical-electronic oscillator
Output it is more stable.Also, appended attached drawing is to simplify and used as illustrating.Attached device number of packages amount shown in figure, shape
And size can modify according to actual conditions, and the configuration of device is likely more complexity.
Better embodiment of the above-described specific embodiment for the present invention, and non-once limits the specific of the present invention
Practical range, the scope of the present invention include being not limited to present embodiment, and all shape, structures according to the present invention are done
Equivalence changes are within the scope of the present invention.
Claims (7)
1. a kind of integrated electro oscillator, including：
One opto chip includes：
One electrical to optical converter；
The output terminal connection of one smooth delay unit, input terminal and electrical to optical converter；
One photo-coupler, input port 1 are connect with the output terminal of light delay unit, and the port 3 of the photo-coupler is light output
End；
The output port 2 of one photodetector, input terminal and photo-coupler connects；
One electronic chip includes：
One first bias device；
One microwave amplifier, input terminal are connect with the output terminal of the first bias device；
The output terminal connection of one tunable electric delay line, input terminal and microwave amplifier；
One microwave filter, input terminal are connect with the output terminal of tunable electric delay line；
One first electric power splitter, input port 1 are connect with the output terminal of microwave filter, and the port 3 of the electricity power splitter is micro-
Wave output terminal；
One microwave phase shifter, input terminal are connect with the output port 2 of the first electric power splitter；
The output terminal connection of one second bias device, input terminal and microwave phase shifter；
The output terminal connection of the second bias device in the input terminal and electronic chip of electrical to optical converter wherein in opto chip；
The input terminal connection of the first bias device in the output terminal and electronic chip of photodetector in the opto chip；
The opto chip and electronic chip are produced in a thermal-conductivity substrate.
2. integrated electro oscillator according to claim 1, wherein electrical to optical converter are directly modulated lasers or are that single-frequency swashs
Light device powers up optical modulator.
3. integrated electro oscillator according to claim 1, wherein light delay unit are the spiral helicine indium phosphorus base light of single channel
Waveguide or the spiral helicine indium phosphorus based optical waveguide of two-way.
4. integrated electro oscillator according to claim 1, wherein tunable electric delay line can for the single channel that on piece integrates
It is the damage in tuned resonance loop to tune microwave intensity attenuator or two-way tunable microwave intensity attenuators, main function
Consumption reduces subsequent device nonlinear effect, is exported so as to fulfill optimal microwave.
5. integrated electro oscillator according to claim 1, wherein microwave filter are flat-top filter, for filtering out list
The microwave frequency of one resonance.
6. integrated electro oscillator according to claim 1, wherein photodetector are the high-speed of indium phosphorus base, height response
Spend photodetector.
7. integrated electro oscillator according to claim 1, wherein opto chip pass through conducting adhesive with electronic chip
Mode be fixed on heat-conducting substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810013244.1A CN108183380B (en) | 2018-01-05 | 2018-01-05 | Integrated optoelectronic oscillator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810013244.1A CN108183380B (en) | 2018-01-05 | 2018-01-05 | Integrated optoelectronic oscillator |
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| CN108183380B CN108183380B (en) | 2020-02-18 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108879294A (en) * | 2018-07-23 | 2018-11-23 | 中国科学院半导体研究所 | Based on the straight optical-electronic oscillator for adjusting the oscillation of semiconductor laser self feed back monocycle |
| CN110137782A (en) * | 2019-05-14 | 2019-08-16 | 中国科学院半导体研究所 | Optical-electronic oscillator |
| CN110176709A (en) * | 2019-05-10 | 2019-08-27 | 中国科学院半导体研究所 | Integrated Fourier mode locking optical-electronic oscillator and application and communication system |
| CN110780398A (en) * | 2019-11-13 | 2020-02-11 | 中国电子科技集团公司第二十九研究所 | Direct-adjusting analog electro-optical conversion integrated assembly |
| CN111146669A (en) * | 2018-11-05 | 2020-05-12 | 中国科学院半导体研究所 | On-chip integrated double-ring photoelectric oscillator |
| CN112117238A (en) * | 2020-09-22 | 2020-12-22 | 上海无线电设备研究所 | Miniaturized optoelectronic oscillator based on SIP packaging technology |
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|---|---|---|---|---|
| CN108879294A (en) * | 2018-07-23 | 2018-11-23 | 中国科学院半导体研究所 | Based on the straight optical-electronic oscillator for adjusting the oscillation of semiconductor laser self feed back monocycle |
| CN111146669A (en) * | 2018-11-05 | 2020-05-12 | 中国科学院半导体研究所 | On-chip integrated double-ring photoelectric oscillator |
| CN110176709A (en) * | 2019-05-10 | 2019-08-27 | 中国科学院半导体研究所 | Integrated Fourier mode locking optical-electronic oscillator and application and communication system |
| US11362482B2 (en) | 2019-05-10 | 2022-06-14 | Institute Of Semiconductors, Chinese Academy Of Sciences | Integrated fourier domain mode-locked optoelectronic oscillator, application and communication system |
| CN110137782A (en) * | 2019-05-14 | 2019-08-16 | 中国科学院半导体研究所 | Optical-electronic oscillator |
| CN110137782B (en) * | 2019-05-14 | 2020-09-15 | 中国科学院半导体研究所 | Photoelectric oscillator |
| US11043917B2 (en) | 2019-05-14 | 2021-06-22 | Institute Of Semiconductors, Chinese Academy Of Sciences | Optoelectronic oscillator |
| CN110780398A (en) * | 2019-11-13 | 2020-02-11 | 中国电子科技集团公司第二十九研究所 | Direct-adjusting analog electro-optical conversion integrated assembly |
| CN112117238A (en) * | 2020-09-22 | 2020-12-22 | 上海无线电设备研究所 | Miniaturized optoelectronic oscillator based on SIP packaging technology |
| CN112117238B (en) * | 2020-09-22 | 2022-07-29 | 上海无线电设备研究所 | Miniaturized optoelectronic oscillator based on SIP packaging technology |
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