CN101625499B - Micro-wavelength converting optical device and autocorrecting method thereof - Google Patents
Micro-wavelength converting optical device and autocorrecting method thereof Download PDFInfo
- Publication number
- CN101625499B CN101625499B CN2008101276738A CN200810127673A CN101625499B CN 101625499 B CN101625499 B CN 101625499B CN 2008101276738 A CN2008101276738 A CN 2008101276738A CN 200810127673 A CN200810127673 A CN 200810127673A CN 101625499 B CN101625499 B CN 101625499B
- Authority
- CN
- China
- Prior art keywords
- wavelength
- laser
- photoelectric detector
- shifter
- conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a micro-wavelength converting optical device and an autocorrecting method thereof. The micro-wavelength converting optical device such as a laser module uses a wavelength converter to convert a wavelength lambda 1 of a laser into an input light with a different wavelength lambda 2 based on a multiple frequency principle, obtains a current I1 representing a laser power before the conversion and current I2 representing an output light power after the conversion through a photoelectric detector when the converting efficiency of the wavelength converter is changed or reduced because of an environment temperature change, and adjusts and controls a pouring current of a laser through an iterative logic circuit according to a ratio of I2/I1 between the two currents, to adjust and control the wavelength lambda 1 of the laser so as to dynamically correct and compensate, automatically lock the wavelength lambda 1 of the laser at an optimal converting the wavelength lambda 2 of the wavelength converter and reach and keep the wavelength converting efficiency of the a small photo-electric device in an optimal operation state.
Description
Technical field
The present invention relates to a kind of miniature wavelength Conversion electrooptical device and bearing calibration automatically thereof.
Background technology
Present common electrooptical device (Photo-electronic/Photonic Device); Like laser module (lasermodule); Its range of application is quite extensive, comprises: scientific research aspect such as material behavior measurement, science are with excitation source, space remote measurement and resource detection etc.; National defense industry aspect such as laser range finder, laser are followed the trail of scanning system, laser defensive weapon etc.; Industry and people's livelihood aspect such as material processed (like micro electronmechanical system MEMS processing, resistance decoration, chip mark), underwater photography and habitata, non-destructive detection, semi-conductor chip detection etc.; Medical application aspect such as ophtalmic treatments, skin treating, tooth treatment, dental operation etc.
One electrooptical device (laser module); General using wavelength shifter (wavelength conversiondevice; Or title wavelength Conversion crystal); Is that the light source (like laser) of λ 1 converts the light source that wavelength is λ 2 to the frequency multiplication principle with a known wavelength in the electrooptical device (like laser module), uses to adapt to different needs.Said electrooptical device (or laser module) generally is commonly referred to as wavelength Conversion electrooptical device (Wavelength ConversionPhotonic Device).The set wavelength shifter of one wavelength Conversion electrooptical device (or laser module) can be designed to various structure; But before each wavelength shifter will be changed wavelength be the laser of λ 1 to convert conversion back wavelength to be the Wavelength of Laser conversion efficiency (wavelength conversion efficiency from λ 1 to λ 2) of λ 2, all form one specific like the curved line relation as the para-curve with respect to the relation of Wavelength of Laser λ 1 before the conversion.That is to say; When before wavelength X 1 coupling before the conversion or (coincident with) a certain specific conversion that coincide during optical maser wavelength; Promptly be called maximum Wavelength-converting (maximum conversion wavelength) λ c; Its wavelength conversion efficiency (wavelength conversion efficiency) just can reach maximal value; Just reach the optimal operation state of maximum wavelength conversion efficiency (maximum wavelength conversion efficiency); And mate or during identical (coincident with) its maximum Wavelength-converting λ c as Wavelength of Laser λ 1 before the conversion, as less than or greater than said maximum Wavelength-converting λ c, its wavelength conversion efficiency promptly reduces; Yet; The wavelength X 1 before the one laser conversion or the maximum Wavelength-converting λ c of a wavelength shifter are that the temperature change with its laser aid or wavelength shifter changes; And environment temperature can change the temperature of said laser aid and wavelength shifter; And one the maximum Wavelength-converting λ c of wavelength X 1 and a wavelength shifter before the laser conversion be different with respect to the temperature change rate (changing rate of temperature per temperature) of each degree of temperature; Just be same as the maximum Wavelength-converting λ c of a wavelength shifter like the wavelength X 1 of hypothesis before next the laser conversion of a certain specific environment temperature; Then when environment temperature changed, the wavelength X 1 before the above-mentioned laser conversion was just no longer identical with the maximum Wavelength-converting λ c of wavelength shifter, and promptly wavelength conversion efficiency also can reduce (degraded); Therefore; To a wavelength Conversion electrooptical device, wavelength X 1 before the laser conversion is kept with the maximum Wavelength-converting λ c identical (coincideing) of wavelength shifter so that said wavelength shifter is reached and maintained maximum wavelength conversion efficiency (maximum wavelength conversion efficiency) is necessary.
Traditional wavelength Conversion electrooptical device (Wavelength Conversion Photonic Device); Like DPSS (diode pumped solid state; Diode pumped solid state) laser instrument all has volume big (bulky) haply, needs outside acousto-optic modulator (require external acoustic optical modulator), hangs down the shortcoming that conversion efficiency (low conversion efficiency), not temperature compensated mechanism (no temperature compensationmechanism) and high-energy consume (large energy consumption); And at present in the application technology of wavelength Conversion electrooptical device; Further comprise US 6; 778; 582, the paper Wavelength Matching and Tuning inGreen Laser Packaging using Second Harmonic Generation that issued of Pub.No.US2008/0002745A1 and Corning Incorporated (Corning Inc.), wherein:
US 6; 778; 582 disclose and utilize vertical cavity surface emitting laser (VCSEL) and folded go up the folded more at last last catoptron of nonlinear crystal (nonlinear crystal), and said structure is placed on the cooling base (heatsink), and its encapsulating structure adopts the technology of piling up of vertical direction; And its architecture principle is to utilize near infrared VCSEL; With wavelength is the light of 1064nm, is the green glow of 532nm through nonlinear crystal (frequency-doubling crystal) conversion generation wavelength, amplifies with the generation green glow through the end face resonance of outside catoptron and VCSEL again; Yet; This kind mode difficulty accomplishes to mate immediately optical maser wavelength and nonlinear crystal centre wavelength; Because of capturing the light intensity of VCSEL and conversion back solid-state laser; So that can limit the serviceability temperature scope of the laser of this framework, and said framework and can't be through the auto-control mode so that its nonlinear crystal (frequency-doubling crystal) reach and continue to maintain maximum wavelength conversion efficiency (maximum wavelength conversion efficiency).
Pub.No.US 2008/0002745A1 mainly openly utilizes non-projection in zone to do the optical source wavelength compensation of conversion back; Promptly utilize non-projection in zone to monitor the stability of output light (conversion back light source) power; Its compensation framework utilization is through wavelength shifter (wavelength converter) light afterwards; Utilize spectroscope that light is partly captured detecting device (detector) again; And the current value that utilizes detecting device to detect judges whether the centre wavelength of DBR (distributed Blatt reflective) laser and nonlinear crystal centre wavelength have coupling; Centre wavelength and the nonlinear crystal centre wavelength of when current value that detecting device detected diminishes, representing DBR laser is coupling not; This moment, feedback circuit will start the current value of (utilizing non-projection in zone action) adjustment DBR laser phase section (phase section) and then the centre wavelength of adjustment DBR laser; To reach the stablizing effect of output light (conversion back light source) power; Yet; Its compensation framework just utilizes detecting device (detector) with acquisition and detect through current value of the light after wavelength shifter (wavelength converter) conversion to judge whether the centre wavelength of DBR laser and nonlinear crystal centre wavelength have coupling, and therefore said framework can only make output light (conversion back light source) power reach stable, and can't be through the auto-control mode so that its wavelength shifter (wavelength converter) reach and continue to maintain maximum wavelength conversion efficiency (maximum wavelength conversionefficiency).
The paper Wavelength Matching and Tuning inGreen Laser Packaging using Second Harmonic Generation of Corning Incorporated (Corning Inc.); Utilizing near-infrared laser diode (DBR laser) to send wavelength is 1064nm laser; And utilize light-collecting lens that laser is injected in the nonlinear crystal (wavelength shifter); So that 1064nm laser converts the green glow that wavelength is 532nm to, its framework is at laser diode (DBR laser) and nonlinear crystal (wavelength shifter) below one temperature controller and temperature sensor to be set respectively; Yet; This framework can't be done the optimization coupling of laser diode (DBR laser) and nonlinear crystal (wavelength shifter) centre wavelength immediately; Can only utilize the temperature of measuring gained to go to suppose the coupling of laser diode (DBR laser) and two centre wavelengths of nonlinear crystal (wavelength shifter); Promptly adjust the temperature of laser diode (DBR laser) and nonlinear crystal (wavelength shifter); To let other centre wavelength move; Therefore can produce the situation of distortion, just the power of the output light after the conversion will change with external temperature, thus its framework and can't be through the auto-control mode so that its nonlinear crystal (wavelength shifter) reach and continue to maintain maximum wavelength conversion efficiency (maximum wavelength conversion efficiency).
By on can know; In the application technology of wavelength Conversion electrooptical device; The wavelength Conversion electrooptical device such as the US 6 that comprise traditional wavelength Conversion electrooptical device such as DPSS (diode pumped solid state) laser instrument and present new development; 778; 582, the paper issued of Pub.No.US2008/0002745A1 and Corning Incorporated (Corning Inc.), the best transition wavelength (λ C) that all can't be automatically the optical maser wavelength (λ 1) before the conversion be locked in wavelength shifter is to reach and to continue to maintain maximum wavelength conversion efficiency (maximum wavelength conversionefficiency).And the present invention designs to the demand.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of miniature wavelength Conversion electrooptical device and automatically bearing calibration thereof, so that the wavelength conversion efficiency of micro photo electric device is reached and continued to maintain the optimal operation state.
Still a further object of the present invention is to provide a kind of miniature wavelength Conversion electrooptical device and bearing calibration automatically thereof; So that the wavelength conversion efficiency of micro photo electric device is reached and is continued to maintain the optimal operation state; And the expansion operating temperature range, to promote the service efficiency of micro photo electric device.
Another purpose of the present invention is to provide a kind of miniature wavelength Conversion electrooptical device and bearing calibration automatically thereof; Fix with the temperature and the maintenance of may command wavelength shifter in use; And then the best transition wavelength X c that makes wavelength shifter keeps fixing and does not change with the variation of environment temperature; Automatically Wavelength of Laser λ 1 is locked and equals the best transition wavelength X c of wavelength shifter at any time; So that the wavelength conversion efficiency of micro photo electric device reaches and continue to maintain the optimal operation state, and enlarges operating temperature range, to promote the service efficiency of micro photo electric device.
For achieving the above object, the invention provides a kind of miniature wavelength Conversion electrooptical device, it comprises one first photoelectric detector, a laser instrument, a wavelength shifter, a light-dividing device, one second photoelectric detector and at least one iterative logical circuit, wherein:
First photoelectric detector is located at the side place of said laser instrument, in order to receiving the laser that is sent sub-fraction known wavelength λ 1 by said laser instrument one side, and according to the power of this laser, converts light signal into electric current I 1;
Laser instrument; Send sub-fraction wavelength X 1 laser to inject said first photoelectric detector by the one of which side; Send the laser of most of known wavelength λ 1 and focus on by its another side and be incident upon the plane of incidence of said wavelength shifter, and the injection current of modulating said laser instrument is to change the Wavelength of Laser that said laser instrument is sent;
Wavelength shifter; Be located at the place, a side of said laser instrument; The plane of incidence through said wavelength shifter receives the laser of the wavelength X of being sent by said laser instrument one side 1, and produces the laser of different wave length λ 2 and outwards exported by the exit facet of said wavelength shifter with the conversion of frequency multiplication principle; Said wavelength shifter has a maximum wavelength conversion efficiency with respect to the Wavelength of Laser of incident; When the wavelength X 1 of the laser power of incident equaled the maximum Wavelength-converting λ c of said wavelength shifter, the maximum wavelength conversion efficiency was reached in the wavelength Conversion work of said wavelength shifter;
Light-dividing device, it is provided with a plane of incidence, and said light-dividing device is divided into most laser and the sub-fraction laser that is incident upon second photoelectric detector of outside output in order to the laser of the wavelength X 2 that will be exported by the exit facet of said wavelength shifter;
Second photoelectric detector in order to receiving the laser by the fraction known wavelength λ 2 that said light-dividing device transmitted, and according to the power of this laser, converts light signal into electric current I 2;
The iterative logical circuit, according to the parameter that is provided to carry out the iterative logical computing;
Wherein, When the conversion efficiency of said wavelength shifter in use reduces because of variation of ambient temperature; Ratio value I2/I1 between the measured electric current I 2 of the electric current I 1 that said first photoelectric detector is measured, said second photoelectric detector is used as parameter; Through said iterative logical circuit to carry out the iterative logical computing; To regulate and control the injection current of said laser instrument, sent Wavelength of Laser λ 1 to regulate and control said laser instrument, automatically Wavelength of Laser λ 1 regulation and control and locking are equaled the maximum Wavelength-converting λ C of wavelength shifter.
The present invention also provides a kind of automatic bearing calibration of miniature wavelength Conversion electrooptical device, and it comprises following steps:
One wavelength Conversion electrooptical device is provided, and its said wavelength dress changes electrooptical device and comprises a laser instrument and a wavelength shifter at least; Said laser instrument is sent the laser of known wavelength λ 1 to inject the plane of incidence of said wavelength shifter by the one of which side; Said wavelength shifter receives the laser of the wavelength X of being sent by said laser instrument 1 through its plane of incidence; And produce the laser of different wave length λ 2 and outwards export with frequency multiplication principle conversion, the maximum Wavelength-converting λ c when wherein said wavelength shifter has a maximum wavelength conversion efficiency and and reaches maximum conversion efficiency with respect to the Wavelength of Laser of incident by its exit facet;
One first photoelectric detector and one second photoelectric detector are provided; Said first photoelectric detector is located at the another side place of said laser instrument, in order to receiving the laser that is sent sub-fraction known wavelength λ 1 by said laser instrument another side, and according to the power of this laser, converts light signal into electric current I 1; Said second photoelectric detector is located at the exit facet place of said wavelength shifter; The laser of the sub-fraction known wavelength λ 2 of the laser that converts wavelength X 2 into that sends in order to the exit facet that receives by said wavelength shifter; And, convert light signal into electric current I 2 according to the power of this laser;
At least one iterative logical circuit is provided, according to the parameter that is provided to carry out the iterative logical computing;
Wherein, When the conversion efficiency of wavelength shifter in use reduces because of variation of ambient temperature; Two electric current I of measuring respectively with said first photoelectric detector, said second photoelectric detector 1, the ratio value I2/I1 between the I2 are used as parameter; Through said iterative logical circuit to carry out the iterative logical calculation function; Change the injection current of laser instrument, sent Wavelength of Laser λ 1, and Wavelength of Laser λ 1 locking is equaled the maximum Wavelength-converting λ c of wavelength shifter to regulate and control said laser instrument.
Compared with prior art, miniature wavelength Conversion electrooptical device provided by the invention and automatically bearing calibration thereof can make the wavelength conversion efficiency of micro photo electric device reach and continue to maintain the optimal operation state.
Description of drawings
Fig. 1 is the basic framework synoptic diagram of the miniature wavelength Conversion electrooptical device of the present invention.
Fig. 2 is the structural representation of miniature wavelength Conversion electrooptical device first embodiment of the present invention.
Fig. 3 is the partial structurtes synoptic diagram of first photoelectric detector among Fig. 2.
Fig. 4 is the partial structurtes synoptic diagram of second photoelectric detector among Fig. 2.
Fig. 5 is the structural representation of TO-can encapsulation (TO-can packaging) pattern of Fig. 2 first embodiment.
Fig. 6 is the encapsulating structure synoptic diagram of miniature wavelength Conversion electrooptical device second embodiment of the present invention.
Fig. 7 is the encapsulating structure synoptic diagram of miniature wavelength Conversion electrooptical device the 3rd embodiment of the present invention.
Fig. 8 is the encapsulating structure synoptic diagram of miniature wavelength Conversion electrooptical device the 4th embodiment of the present invention.
Fig. 9 is the encapsulating structure synoptic diagram of miniature wavelength Conversion electrooptical device the 5th embodiment of the present invention.
Figure 10 is the automatic bearing calibration function block schematic diagram of the miniature wavelength Conversion electrooptical device of the present invention.
Description of reference numerals: miniature wavelength Conversion electrooptical device-1,1a, 1b, 1c, 1d, 1e; First photoelectric detector-10; The plane of incidence-101; Electronics contact plate pad (electronic contact pad)-102,103,104; First photodetector chips-105; Substrate (substrate)-106; Receive aperture (receivingaperture)-107; Reflecting surface-108; Substrate-11; TO-can encapsulation-12; TO-can eyeglass (TO-canlens)-121; TO-can covers (TO-can cap)-122; TO-can bearing (TO-can header)-123; TO-can electrically connect portion (electronic connection of TO-can)-124; First outer sleeve (holder)-13; Second outer sleeve (holder)-14; Laser instrument-20; Side-201,203; Laser-202,204,205,206,207; Wavelength shifter-30; The plane of incidence-301; Exit facet-302; Light-dividing device-40; The plane of incidence-401; Second photoelectric detector-50; Second photodetector chips-501; Receive aperture (receiving aperture)-502; Electronics contact plate pad-503,504,505; Substrate (substrate)-506; The plane of incidence-507; Reflecting surface-508; Iterative logical (iteration logic) circuit-60; Eyeglass-70; Eyeglass-80; Outer cover eyeglass-81; Temperature sensor (temperature sensing device)-90; Temperature controller (temperature control device)-91.
Embodiment
Below in conjunction with accompanying drawing, do more detailed explanation to inventing above-mentioned and other technical characterictic and advantage.
Shown in Fig. 1-4, it is respectively the basic framework synoptic diagram of miniature wavelength Conversion electrooptical device of the present invention, structural representation and the local structural representation of first embodiment.The described miniature wavelength Conversion electrooptical device of the embodiment of the invention (A Compact Wavelength Conversion Photonic Device withSelf-Calibration Function) 1; Comprise: first photoelectric detector (photo detector, PD) 10, laser instrument 20, wavelength shifter 30, light-dividing device 40, second photoelectric detector (PD) 50 and at least one iterative logical (iteration logic) circuit 60.
Said first photoelectric detector (PD1) 10 is located at the place, a side of said laser instrument 20; In order to receive the sub-fraction known wavelength of being sent by said laser instrument 20 1 sides 201 is λ 1 laser 202; And converting light signal into current signal I1 according to the luminous power (optical power) of said laser 202, just said current signal I1 can represent the luminous power of said laser 202; Said first photoelectric detector (PD) 10 can be the module (a module with several photonicdevices) that single-chip (single chip) or has at least two electrooptical devices; And for preventing that said laser 202 from reflecting back into said laser instrument 20; Like Fig. 1, shown in Figure 2, the plane of incidence of said first photoelectric detector 10 (facet) 101 can be not orthogonal to the optical axis (opticalbeam axis) of laser 202.
Said laser instrument (laser) 20 can be semiconductor laser instrument (semiconductor laser) or diode pumped solid state (diode pumped solid state; DPSS) laser instrument; And can be the module that single-chip laser instrument (DFB, multi-section DBR laser) or has at least two electrooptical devices (send light that wavelength is λ 0 and produce the light of wavelength X 1 through a solid crystals) like the semiconductor laser instrument; Said laser instrument 20 can be the laser 202 of λ 1 by the sub-fraction known wavelength that send one of which side 201, and can to send most of known wavelength by its another side 203 be the laser 204 of λ 1 is incident upon said wavelength shifter 30 with focusing the plane of incidence 301; Again; Can establish tool one temperature sensor (temperature sensing device) on the said laser instrument 20 to detect its temperature; And establish tool one temperature controller (temperature control device) like heating resistor (thermal resistor) or refrigerator (TE-cooler) controlling its temperature, and can enlarge operating temperature range; (injection current IL), or changes the laser wavelength lambda 1 of temperature to change said laser instrument 20 of said laser instrument further can to modulate the injection current of said laser instrument.
Said wavelength shifter 30 is located at 203 places, side in the face of said laser instrument 20; Through the plane of incidence 301; Reception is sent the laser 204 of wavelength X 1 by the side 203 of said laser instrument 20, and produces the laser 205 of wavelength X 2 and outwards exported by exit facet 302 with the conversion of frequency multiplication principle; Said wavelength shifter 30 can be stack material or waveguide (waveguide) material, to receive laser by the said plane of incidence 301; If said wavelength shifter 30 is provided with waveguide (waveguide) structure, the laser 204 that the plane of incidence 301 sizes of then its waveguide can be sent by said laser instrument 20 with easy reception greatly; And for preventing that said laser 204 from reflecting back into said laser instrument 20, the plane of incidence 301 of said wavelength shifter 30 can be not orthogonal to the optical axis (opticalbeam axis) of said laser 204; The said again plane of incidence 301 can plate one deck cooperate wavelength X 1 laser antireflection (anti-reflection, AR) plated film is so that it receives the laser 204 that is sent by said laser instrument 20 easily; Said exit facet 302 can plate one deck cooperate wavelength X 2 antireflection (anti-reflection, AR) plated film is so that the laser 205 of conversion back wavelength X 2 is seen off by said exit facet 302 easily; Said again exit facet 302 can plate the height reflection plated film of one deck to wavelength X 1, is seen off by said exit facet 302 with the laser 204 that prevents wavelength X 1.Said wavelength shifter 30 can be established tool one temperature sensor (temperature sensing device) to detect its temperature; And establish tool one temperature controller (temperature control device) like heating resistor (thermalresistor) or refrigerator (TE-cooler) controlling its temperature, and can enlarge operating temperature range; Said again wavelength shifter 30 has a maximum wavelength conversion efficiency (maximumwavelength conversion efficiency) with respect to the wavelength of the laser 204 of incident; Just; When the wavelength X 1 of the laser 204 of incident can be regulated and control to the maximum Wavelength-converting that equals (coincideing) wavelength shifter 30 (maximum conversionwavelength) λ c, can make the conversion work of wavelength reach the maximum wavelength conversion efficiency; The temperature of change wavelength shifter 30 capable of using again is to change its maximum wavelength Wavelength-converting λ c.
Said light-dividing device 40 will be in order to being divided into small one and large one two parts by wavelength X 2 laser 205 that the exit facet 302 of said wavelength shifter 30 is exported; Outwards output is forming miniature wavelength Conversion electrooptical device 1 desired output laser for most of laser 206 wherein, and fraction laser 207 wherein is incident upon (input) second photoelectric detector 50.With Fig. 1 is the example explanation; The 90 degree outgoing vertically upward again of the plane of incidence 401 usefulness of said light-dividing device 40 so that said laser 205 is turned by horizontal direction incident; Make the part reflecting face of said plane 401 as the laser 205 of wavelength X 2; Making most of laser 206 of said laser 205 be incident on 401 last times of said plane can be reflected, and has only fraction laser 207 can penetrate said plane 401 and is received by said second photoelectric detector (PD) 50.The said plane of incidence 401 can be the partial reflection material that cooperates wavelength X 2, maybe can set up the partial reflection spectroscope of a cooperation wavelength X 2.
Said second photoelectric detector (PD) 50 is the laser 207 of λ 2 in order to receive the fraction known wavelength of being sent here by said light-dividing device 40; And according to the luminous power (optical power) of said laser 207; Convert light signal into current signal I2; Just, said current signal I2 can represent the luminous power of said laser 207; Said again second photoelectric detector (PD) 50 can be the module (a module with several photonic devices) that single-chip (single chip) or has at least two electrooptical devices.
Said iterative logical (iteration logic) circuit 60 has the iterative logical calculation function; It can be according to the iterative logical calculation function of the data that provided to set; With miniature wavelength Conversion electrooptical device 1; It utilizes the injection current (injection current) of the calculation function of iterative logical with the said laser instrument 20 of auto-control, with synchronization modulation laser wavelength lambda 1.
Pass through said structure; When the conversion efficiency of said wavelength shifter 30 in use causes variation or reduction because of variation of ambient temperature; Be that the wavelength X 1 of laser 204 of said wavelength shifter 30 is different with maximum Wavelength-converting λ C at that time and can't reach the maximum wavelength conversion efficiency time; Two electric current I 1 that can said first photoelectric detector 10, said second photoelectric detector 50 is measured, the ratio value (I2/I1) between the I2 are used as parameter; And through the iterative logical calculation function of said iterative logical (iteration logic) circuit 60 to set; Injection current (injection current) with the said laser instrument 20 of auto-control; As: do computing after increasing the injection current of said laser instrument 20; If the wavelength conversion efficiency of gained reduces on the contrary, just oppositely change into reduce said laser instrument 20 injection current to promote wavelength conversion efficiency, the injection current that so the iterative logical computing can be through regulating and control said laser instrument 20 is to reach the maximum wavelength conversion efficiency; Just; Utilize the method for injection current that iteration changes said laser instrument 20 regulating and control the wavelength (λ 1) of said laser instrument 20 laser that sent 204, automatically wavelength X 1 locking of said laser 204 being equaled the best (maximum) Wavelength-converting (λ C) of said wavelength shifter 30, so that the wavelength conversion efficiency of miniature wavelength Conversion electrooptical device 1 (conversion efficiency) is reached and continued to maintain the optimal operation state.
Said again miniature wavelength Conversion electrooptical device 1 has above-mentioned basic framework; Promptly comprise first photoelectric detector 10, laser instrument 20, wavelength shifter 30, light-dividing device 40, second photoelectric detector (PD) 50 and basic building block such as iterative logical (iteration logic) circuit 60 at least; Yet its assembling mode or encapsulation (packaging) mode is not restricted to this; Can the integrated mode of chip (wafer) and cooperate the assembling of TO-can encapsulation (TO-can packaging) pattern to form like above-mentioned basic framework as shown in Figure 1; Also generally optical element as sending optics submodule (transmit optical sub-assembly; Being called for short TOSA) sleeve (holder) mode commonly used assembles formation, and it can need or cost is considered and selected with volume production, explains respectively as follows with preferred embodiment:
First embodiment
Shown in Fig. 2-5, it is respectively the synoptic diagram of structure, first photoelectric detector part, second photoelectric detector part and encapsulation (TO-can packaging) structure thereof of miniature wavelength Conversion electrooptical device first embodiment of the present invention.The described miniature wavelength Conversion electrooptical device 1a of present embodiment assembles formation with the integrated mode of chip (wafer), and it comprises: first photoelectric detector 10, laser instrument 20, wavelength shifter 30, light-dividing device 40, second photoelectric detector 50 and in relevant Circuits System, be provided with an iterative logical (iteration logic) circuit 60 (Fig. 2 does not show) at least; Wherein, as shown in Figure 2, between said laser instrument 20 and said wavelength shifter 30, can establish an eyeglass 70, in order to will focus to said wavelength shifter 30 by the laser 204 that said laser instrument 20 sends; Said eyeglass 70 can be the lens systems of single eyeglass or at least two eyeglasses of a tool, its can be a spherical mirror, an aspheric mirror, a gradient type mirror (GRIN lens) but or the optical devices of other optically focused/focussed laser beams; And if laser beam 204 gets into the degree of scattering of said wavelength shifter 30 when little, said eyeglass 70 is inessential.
The plane of incidence 101 of said first photoelectric detector 10 can be not orthogonal to the optical axis (opticalbeam axis) of laser 202; And be to simplify package handling; The structure of said first photoelectric detector 10 is as shown in Figure 3; All electronics contact plate pads (electronic contact pad) 102,103,104 and first photodetector chips 105 all is seated on the plane of the supporting surface that is parallel to substrate (substrate) 106, with the combining of facilitating chip and substrate (die bonding) or connecting line (gold thread) the automated job that combines (wire bonding) with substrate.
Said substrate 106 can be by processing the material of the low loss of wavelength X 0 (low loss), or establish tool and be looped around the peripheral hole slot of the optical path of laser 202 to reduce the light loss of laser 202 from the reception aperture (receiving aperture) 107 of the said plane of incidence 101 to said first photodetector chips (photo detector chip) 105; And reflecting surface 108 reflexes to the laser 202 of incident on the reception aperture (receiving aperture) 107 of said first photodetector chips 105; For reaching this purpose; Reflecting surface 108 can form make said laser 202 incident angle greater than total internal reflection (total internal reflection; TIR) critical angle (critical angle), or can plate the plated film of one deck on the said reflecting surface 108 to wavelength X 0 tool high reflectance, or set up a catoptron.
Said wavelength shifter 30 is used to receive the laser 204 of the wavelength X of being sent by laser instrument 1 and the laser 205 that conversion produces wavelength X 2, and said wavelength shifter 30 can be a stack material or a waveguide (waveguide) material to receive luminous energy by its plane of incidence 301; If wavelength shifter 30 is provided with waveguiding structure, then the lateral dimension of its waveguide can be than the luminous energy that sent by laser instrument with easy reception greatly; And for preventing that laser 205 from reflecting back into said laser instrument 20, the plane of incidence 301 of Fig. 2 medium wavelength converter 30 (please join prosperous Fig. 1) can be not orthogonal to the optical axis (optical beam axis) of said laser 204; The said plane of incidence 301 can plate one deck cooperate wavelength X 1 antireflection (anti-reflection, AR) plated film is so that receive the laser that is sent by said laser instrument 20 easily; Said exit facet 302 can plate one deck cooperate wavelength X 2 antireflection (anti-reflection, AR) plated film is so that the laser of conversion back wavelength X 2 is seen off easily; Said exit facet 302 can be to be seen off by said exit facet 302 with the laser that prevents wavelength X 1 the height reflection plated film of wavelength X 1.Said wavelength shifter 30 can be established tool temperature sensor (figure does not show) to detect its temperature; Again wavelength shifter can establish tool temperature controller (figure do not show) like thermal resistor (thermal resistor) or refrigerator (TE-cooler) controlling its temperature, and can enlarge operating temperature range.Because said wavelength shifter 30 has a maximum wavelength conversion efficiency with respect to the wavelength of the laser 204 of incident, therefore the temperature of the said wavelength shifter 30 of change capable of using is to change said maximum Wavelength-converting.
As shown in Figure 2; The said plane of incidence 401 usefulness so that laser 205 is turned (like illustrated 90 degree) to supporting surface perpendicular to substrate 11; The said plane of incidence 401 is used as the part reflecting face of the laser 205 of wavelength X 2; Most of laser is incident on the said plane of incidence 401 and can be reflected, and has only sub-fraction laser can penetrate the plane of incidence 401 and is received by second photoelectric detector (PD, photo detector) 50; The said plane of incidence 401 can be the partial reflection material that cooperates wavelength X 2, maybe can set up the partial reflection spectroscope of a cooperation wavelength X 2.
The said second photoelectric detector (PD; Photo detector) 50 send the fraction laser 207 of (promptly penetrating the said plane of incidence 401) in order to receive by the said plane of incidence 401, it can be the module (a module with several photonic devices) that single-chip (single chip) or has at least two electrooptical devices.And be instant packed operation; The structure of said second photoelectric detector 50 is as shown in Figure 4; All electronics contact plate pads (electronic contact pad) 503,504,505 and second photodetector chips (photo detectorchip) 501 all is placed on the plane of the supporting surface that is parallel to substrate (substrate) 506, to make things convenient for the automated job of chip and the combination (wire bonding) that combines (die bonding) or lead (gold thread) of substrate; And the substrate among Fig. 4 (substrate) 506 can be by the material of wavelength X 2 low-loss is processed; Or establish the peripheral hole slot of optical path that tool is looped around laser 207, to reduce the light consume of laser 207 from the reception aperture (receiving aperture) 502 of the plane of incidence 507 to second photodetector chips 501.Reflecting surface 508 reflexes to the laser 207 of incident on the reception aperture (receiving aperture) 502 of said second photodetector chips 501 again; For reaching this purpose; Said reflecting surface 508 can form make laser 207 incident angle greater than total internal reflection (totalinternal reflection; TIR) critical angle (critical angle), or can plate the plated film of one deck on the said reflecting surface 508 to wavelength X 0 tool high reflectance, or set up a catoptron.
And substrate shown in Figure 2 (substrate) 11 is provided with the substrate (substrate) 402 and second photoelectric detector 50 of first photoelectric detector 10, laser instrument 20, eyeglass 70, wavelength shifter 30 in order to the location; And the electrical connection of laser instrument 20 also is provided, and laser instrument 20 and said wavelength shifter 30 thermal controls apparatus (thermal control device) that possibly be provided with; Said substrate (substrate) 11 can be established tool check key (alignment key) and/or etching hole (etched hole), so that the support plate (substrate) 402 of said first photoelectric detector 10, said laser instrument 20, said eyeglass 70, said wavelength shifter 30 and said second photoelectric detector 50 accurate location easily; Said substrate (substrate) 11 can be established tool temperature sensor (figure does not show) to detect its temperature; Can establish again tool temperature controller (temperature control device) (figure do not show) like thermal resistor (thermalresistor) or refrigerator (TE-cooler) controlling its temperature, and can enlarge operating temperature range; Eyeglass among Fig. 2 80 is the selectivity device again, in order to optically focused/focusing outwards output by reflecting surface 401 laser light reflected 206.
As shown in Figure 5, the structural representation of TO-can encapsulation (TO-can packaging) pattern of its Fig. 2 first embodiment.The one-piece construction body of first embodiment as shown in Figure 2 can be located in the TO-can encapsulation 12; Comprise a TO-can eyeglass (TO-can lens) 121, one TO-can lid (TO-can cap) 122, one TO-can bearing (TO-can header) 123 and TO-can electrical connection section (electronic connection of TO-can) 124, said TO-can electrical connection section 124 capable of using is with control and detect each device on the above-mentioned first embodiment one-piece construction as shown in Figure 2.
Second embodiment
With reference to shown in Figure 6, the encapsulating structure synoptic diagram of miniature wavelength Conversion electrooptical device second embodiment of the present invention.Miniature wavelength Conversion electrooptical device 1b with general optical element as sending optics submodule (transmit optical sub-assembly; Abbreviation TOSA) metal-coating tube (metal holder) mode commonly used is assembled formation; Its basic framework comprises: first photoelectric detector 10, laser instrument 20 (can be a DBR laser instrument), wavelength shifter 30 (can be a PPLN (Periodically Poled Lithium Niobate) crystal), light-dividing device 40 (can be a spectroscope), second photoelectric detector 50 and in relevant Circuits System, be provided with an iterative logical (iteration logic) circuit 60 (not showing among Fig. 6) at least; And it is as shown in Figure 6; Between said laser instrument 20 and said wavelength shifter 30, can establish an eyeglass 70; In order to will focus to said wavelength shifter 30 by the laser 204 that said laser instrument 20 sends; Said eyeglass 70 can be the lens systems of single eyeglass or at least two eyeglasses of a tool; It can be a spherical mirror, an aspheric mirror, a gradient type mirror (GRINlens) but or the optical devices of other optically focused/focussed laser beams, if but laser 204 gets into the degree of scattering of said wavelength shifter 30 when little, said eyeglass 70 is inessential.Present embodiment can be established an eyeglass 80 and a protection with outer cover eyeglass 81 again, and said eyeglass 80 be the selectivity device, in order to optically focused/focusing by reflecting surface 401 laser light reflected 206 outside output.
And the framework of miniature wavelength Conversion electrooptical device 1b has the coaxial-type adjusting function; It utilizes metallic first outer sleeve (metal holder) 13; With said first photoelectric detector 10 and said laser instrument 20 and/or eyeglass 70 of location assembling, and utilize metallic second outer sleeve (metal holder) 14 with the said wavelength shifter of location assembling 30, light-dividing device 40 and second photoelectric detector 50 and/or eyeglass 80, protection with outer cover eyeglass 81; Through adjusting said first outer sleeve (metal holder) 13 and said second outer sleeve (metalholder) 14, more said first outer sleeve 13 and said second outer sleeve, 14 positioning bondings are integral again so that aim at contraposition to an optimum position between the two.
The 3rd embodiment
With reference to shown in Figure 7, it is the encapsulating structure synoptic diagram of the 3rd embodiment of miniature wavelength Conversion electrooptical device of the present invention.The encapsulating structure of miniature wavelength Conversion electrooptical device 1c is similar to the miniature wavelength Conversion electrooptical device 1b of second embodiment, also has the coaxial-type adjusting function through adjustment first outer sleeve (metal holder), 13 and second outer sleeve (metal holder) 14; And present embodiment is established tool one temperature sensor (temperature sensing device) 90 respectively to detect its temperature in addition on said laser instrument 20 and said wavelength shifter 30; And a temperature controller (temperature control device) 91 as refrigerator (TE-cooler) are to control temperature; Can enlarge the operating temperature range of present embodiment relatively, to promote the service efficiency of micro photo electric device.
The 4th embodiment
With reference to shown in Figure 8, it is the encapsulating structure synoptic diagram of the 4th embodiment of miniature wavelength Conversion electrooptical device of the present invention.The encapsulating structure of miniature wavelength Conversion electrooptical device 1d is similar to the miniature wavelength Conversion electrooptical device 1b of second embodiment, can have the coaxial-type adjusting function through adjustment first outer sleeve (metal holder), 13 and second outer sleeve (metal holder) 14; And different between the miniature wavelength Conversion electrooptical device 1b of the miniature wavelength Conversion electrooptical device 1d of present embodiment and second embodiment be in: second photoelectric detector 50 of the miniature wavelength Conversion electrooptical device 1d of present embodiment is assembled in the opposite side of laser 205 through light-dividing devices 40, and promptly fraction laser 207 penetrates said light-dividing device 40 and parallel with laser 205 approximately and be incident upon said second photoelectric detector 50; And in the encapsulating structure of the miniature wavelength Conversion electrooptical device 1b of second embodiment; The spectroscope structure function of said light-dividing device 40 is different; Make said second photoelectric detector 50 can be assembled in laser 205 and reflect the side that is an angle of 90 degrees through light-dividing device 40; Promptly vertical with laser 205; Just second photoelectric detector 50 of the miniature wavelength Conversion electrooptical device of second embodiment 1b is assembled in laser 205 90 degree vertical sides through light-dividing devices 40, and promptly fraction laser 207 is vertical with laser 205 and be incident upon said second photoelectric detector 50 via said light-dividing device 40 reflections.
The 5th embodiment
With reference to shown in Figure 9, it is the encapsulating structure synoptic diagram of miniature wavelength Conversion electrooptical device the 5th embodiment of the present invention.The encapsulating structure of the miniature wavelength Conversion electrooptical device 1e of present embodiment is similar to the miniature wavelength Conversion electrooptical device 1d of the 4th embodiment, also has the coaxial-type adjusting function through adjustment first outer sleeve (metal holder), 13 and second outer sleeve (metal holder) 14; And present embodiment is established tool one temperature sensor (temperature sensing device) 90 respectively to detect its temperature in addition on said laser instrument 20 and said wavelength shifter 30; And a temperature controller (temperature control device) 91 as refrigerator (TE-cooler) are to control temperature; Can enlarge the operating temperature range of present embodiment relatively, to promote the service efficiency of micro photo electric device.
The miniature wavelength Conversion electrooptical device that has zero offset capability again with the present invention; Maximum Wavelength-converting (maximumconversion wavelength) the λ c of laser wavelength lambda 1 necessary (coincident with) wavelength shifter that coincide before the conversion; So that converting the conversion work of laser wavelength lambda 2 to, laser wavelength lambda 1 reaches maximum wavelength conversion efficiency (maximum wavelength conversion wavelength); Yet; The maximum Wavelength-converting of laser wavelength lambda 1 and wavelength shifter (maximum conversion wavelength) λ c will change along with the temperature change of laser instrument and wavelength shifter; Just when wavelength X 1 before the conversion must reach or (coincident with) a certain specific conversion that coincide before during optical maser wavelength; Promptly be called maximum Wavelength-converting (maximum conversion wavelength λ c); Its wavelength conversion efficiency (wavelength conversionefficiency) just can reach maximal value, just reaches the optimal operation state, and when wavelength X 1 before the conversion is coincide (coincident with) its maximum Wavelength-converting λ c; As less than or greater than said maximum Wavelength-converting λ c, its wavelength conversion efficiency promptly reduces; Yet; The maximum Wavelength-converting λ c of an optical maser wavelength of one lasing light emitter (conversion before) or a wavelength shifter is that the temperature change with its laser aid or wavelength shifter changes; And environment temperature will change the temperature of said laser aid and wavelength shifter; And the maximum Wavelength-converting λ c of an optical maser wavelength of a lasing light emitter (conversion before) and a wavelength shifter is different with respect to the temperature change rate (changingrate of temperature per temperature) of each degree of temperature; Just be same as (identical like hypothesis in the optical maser wavelength (before the conversion) of a certain next lasing light emitter of specific environment temperature; Coincident with) the maximum Wavelength-converting λ c of a wavelength shifter; Then when environment temperature changes, the maximum Wavelength-converting λ c of above-mentioned optical maser wavelength (before the conversion) and wavelength shifter is with regard to no longer identical (coincideing), and promptly wavelength conversion efficiency also reduces (degraded); Therefore, to a wavelength Conversion electrooptical device,, environment temperature still make optical maser wavelength (before the conversion) keep identical (coincideing) to be necessary when changing with the maximum Wavelength-converting λ c of wavelength shifter.
Shown in figure 10, it discloses a kind of optical maser wavelength (before the conversion) that when environment temperature changes, makes and keeps the method for identical (coincideing) with the maximum Wavelength-converting λ c of wavelength shifter, wherein:
I1 is by first photoelectric detector, the 10 measured photocurrents of obtaining; The received luminous power of itself and first photoelectric detector 10 is proportional; The laser power 202 that itself and laser instrument 20 are sent by a side 201 is proportional, and the power P 1 of the laser 204 that is also sent by a side 203 with laser instrument 20 is proportional; The control methods that I1 provides iterative logical (iteration logic) circuit 60 are with the required data of the wavelength X of control laser instrument 20 1; In addition; I1 can provide luminous power (the power of the laser) the required data of laser power control logic (laser power control logic) with control laser; Be that auto light power control (is APC; Auto-Power control), an example is that P1 is remained unchanged when laser instrument 20 temperature changes; For example when laser instrument 20 temperature increase; P1 reduces and I1 reduces; Then, laser power control logic (laser powercontrol logic) increases the injection current (injection current) of laser instrument 20, can the luminous power of laser be retracted original level.
I2 is by second photoelectric detector, the 50 measured photocurrents of obtaining, and the power of the laser 207 that itself and second photoelectric detector 50 are received is proportional, and the power of itself and wavelength X 2 laser 205 is proportional; Because the wavelength conversion efficiency of wavelength shifter 30 is decided by (λ 1-λ C); The wavelength conversion efficiency that can set wavelength shifter 30 is C (λ 1-λ C), and promptly C is the function of (λ 1-λ C), and so I2 and P1*C (λ 1-λ C) are proportional; If I2 is divided by I1; Can obtain a function I2/I1 and wavelength conversion efficiency is that C (λ 1-λ C) is proportional, like this, can derive automatic bearing calibration of the present invention.
And the above-mentioned zero offset capability of automatically wavelength X 1 of laser 204 being regulated and control at any time and being locked the best (maximum) Wavelength-converting λ C that equals wavelength shifter 30 can be described as peak power output locking (powermaximum locking) mechanism, and the miniature wavelength Conversion electrooptical device 1 that the present invention just has a zero offset capability can be reached effect of peak power output locking (power maximum locking) mechanism; Please be simultaneously with reference to shown in Figure 10, automatic bearing calibration of the present invention can comprise following steps:
One wavelength Conversion electrooptical device is provided; Said wavelength Conversion electrooptical device 1 comprises a laser instrument 20 and a wavelength shifter 30 at least, and wherein said laser instrument 20 can send the plane of incidence 301 of laser 204 to inject said wavelength shifter 30 that known wavelength is λ 1 by one of which side 203; Wherein said wavelength shifter 30 can be through its plane of incidence 301 to receive the laser power 204 by the wavelength X 1 that laser instrument was sent; And produce the laser 205 of wavelength X 2 and outwards export with frequency multiplication principle conversion, maximum Wavelength-converting (maximum conversion wavelength) the λ c when wherein said wavelength shifter 30 has a maximum wavelength conversion efficiency and to reach maximum conversion efficiency with respect to the wavelength of the laser 204 of incident by its exit facet 302;
One first photoelectric detector (PD is provided; Photo detector) 10 and 1 second photoelectric detector (PD) 50; Wherein said first photoelectric detector 10 is located at 201 places, a side of said laser instrument 20; In order to receive the sub-fraction known wavelength of being sent by said laser instrument 20 1 sides 201 is the laser 202 of λ 1, and converts light signal into electric current I 1 according to the power of said laser 202; Wherein said second photoelectric detector 50 is located at exit facet 302 places of aforementioned wavelength shifter 30; The wavelength that converts in order to receive that exit facet 302 by said wavelength shifter 30 sent is that the sub-fraction known wavelength of the laser 205 of λ 2 is the laser 207 of λ 2, and converts light signal into electric current I 2 according to the power of said laser 207;
At least one iterative logical (iteration logic) circuit 60 is provided, and it can be according to the iterative logical calculation function of the data that provided to set;
Wherein, When the conversion efficiency of said wavelength shifter 30 in use reduces because of variation of ambient temperature; Be that the wavelength X 1 of laser 204 of the said wavelength shifter 30 of incident is different with maximum Wavelength-converting λ c at that time and can't reach the maximum wavelength conversion efficiency time; Can be said measured two electric current I 1 of first photoelectric detector 10, said second photoelectric detector 50, the ratio value I2/I1 between the I2 be used as parameter; Through the iterative logical calculation function of said iterative logical circuit 60 to set; To utilize iteration to change the injection current of said laser instrument 20; The wavelength X 1 of the laser 204 that sends with the said laser instrument 20 of auto-control, and automatically wavelength X 1 locking of said laser 204 is equaled the maximum Wavelength-converting λ c of said wavelength shifter 30 is so that the wavelength conversion efficiency of micro photo electric device 1 (conversion efficiency) is reached and continued to maintain the optimal operation state.
More than explanation is just illustrative as far as invention, and nonrestrictive, those of ordinary skills understand; Under the situation of spirit that does not break away from following accompanying claims and limited and scope, can make many modifications, change; Or equivalence, but all will fall in protection scope of the present invention.
Claims (12)
1. a miniature wavelength Conversion electrooptical device is characterized in that, it comprises one first photoelectric detector, a laser instrument, a wavelength shifter, a light-dividing device, one second photoelectric detector and at least one iterative logical circuit, wherein:
First photoelectric detector is located at the side place of said laser instrument, in order to receiving the laser that is sent sub-fraction known wavelength λ 1 by said laser instrument one side, and according to the power of this laser, converts light signal into electric current I 1;
Laser instrument; Send sub-fraction wavelength X 1 laser to inject said first photoelectric detector by the one of which side; Send the laser of most of known wavelength λ 1 and focus on by its another side and be incident upon the plane of incidence of said wavelength shifter, and the injection current of modulating said laser instrument is to change the Wavelength of Laser that said laser instrument is sent;
Wavelength shifter; Be located at the place, a side of said laser instrument; The plane of incidence through said wavelength shifter receives the laser of the wavelength X of being sent by said laser instrument one side 1, and produces the laser of different wave length λ 2 and outwards exported by the exit facet of said wavelength shifter with the conversion of frequency multiplication principle; Said wavelength shifter has a maximum wavelength conversion efficiency with respect to the Wavelength of Laser of incident; When the wavelength X 1 of the laser power of incident equaled the maximum Wavelength-converting λ c of said wavelength shifter, the maximum wavelength conversion efficiency was reached in the wavelength Conversion work of said wavelength shifter;
Light-dividing device, it is provided with a plane of incidence, and said light-dividing device is divided into most laser and the sub-fraction laser that is incident upon second photoelectric detector of outside output in order to the laser of the wavelength X 2 that will be exported by the exit facet of said wavelength shifter;
Second photoelectric detector in order to receiving the laser by the fraction known wavelength λ 2 that said light-dividing device transmitted, and according to the power of this laser, converts light signal into electric current I 2;
The iterative logical circuit, according to the parameter that is provided to carry out the iterative logical computing;
Wherein, When the conversion efficiency of said wavelength shifter in use reduces because of variation of ambient temperature; Ratio value I2/I1 between the measured electric current I 2 of the electric current I 1 that said first photoelectric detector is measured, said second photoelectric detector is used as parameter; Through said iterative logical circuit to carry out the iterative logical computing; To regulate and control the injection current of said laser instrument, sent Wavelength of Laser λ 1 to regulate and control said laser instrument, automatically Wavelength of Laser λ 1 regulation and control and locking are equaled the maximum Wavelength-converting λ C of wavelength shifter;
Said laser instrument is further established tool and is detected the temperature sensor of its temperature and the temperature controller of its temperature of control;
Said wavelength shifter is further established tool and is detected the temperature sensor of its temperature and the temperature controller of its temperature of control.
2. miniature wavelength Conversion electrooptical device as claimed in claim 1 is characterized in that said first photoelectric detector is single-chip or the module with at least two electrooptical devices.
3. miniature wavelength Conversion electrooptical device as claimed in claim 1 is characterized in that, said laser instrument is semiconductor laser, diode pumped solid state laser device, single-chip laser instrument or has the module of at least two electrooptical devices.
4. miniature wavelength Conversion electrooptical device as claimed in claim 1 is characterized in that, the crystal of said wavelength shifter for being made up of stack material.
5. miniature wavelength Conversion electrooptical device as claimed in claim 1 is characterized in that said wavelength shifter is a waveguide material, to receive laser by its plane of incidence.
6. miniature wavelength Conversion electrooptical device as claimed in claim 1 is characterized in that, the plane of incidence of said light-dividing device is the partial reflection material that cooperates the laser wavelength lambda 2 of incident.
7. miniature wavelength Conversion electrooptical device as claimed in claim 1 is characterized in that, the plane of incidence of said light-dividing device is set up the partial reflection spectroscope of the laser wavelength lambda 2 of a cooperation incident.
8. miniature wavelength Conversion electrooptical device as claimed in claim 1 is characterized in that said second photoelectric detector is single-chip or the module with at least two electrooptical devices.
9. miniature wavelength Conversion electrooptical device as claimed in claim 1 is characterized in that, between said laser instrument and said wavelength shifter, a focusing/optically focused is set and uses eyeglass.
10. miniature wavelength Conversion electrooptical device as claimed in claim 9; It is characterized in that; It further comprises a substrate; Said substrate be used for the location said first photoelectric detector, said laser instrument, said eyeglass, said wavelength shifter and said second photoelectric detector are set, and through said substrate so that the electrical connection of laser instrument to be provided.
11. miniature wavelength Conversion electrooptical device as claimed in claim 1 is characterized in that, said miniature wavelength Conversion electrooptical device adopts the TO-can encapsulation.
12. miniature wavelength Conversion electrooptical device as claimed in claim 1; It is characterized in that; It further comprises metallic first outer sleeve, with location said first photoelectric detector of assembling and laser instrument, and comprises metallic second outer sleeve; With location assembling said wavelength shifter, said light-dividing device and said second photoelectric detector, and the coaxial positioning bonding again of aligning contraposition adjustment is integral between said first outer sleeve and said second outer sleeve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101276738A CN101625499B (en) | 2008-07-07 | 2008-07-07 | Micro-wavelength converting optical device and autocorrecting method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101276738A CN101625499B (en) | 2008-07-07 | 2008-07-07 | Micro-wavelength converting optical device and autocorrecting method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101625499A CN101625499A (en) | 2010-01-13 |
| CN101625499B true CN101625499B (en) | 2012-07-18 |
Family
ID=41521388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101276738A Expired - Fee Related CN101625499B (en) | 2008-07-07 | 2008-07-07 | Micro-wavelength converting optical device and autocorrecting method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101625499B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104061446B (en) * | 2013-03-21 | 2018-04-03 | 优志旺电机株式会社 | Laser light-source device |
| CN103684579A (en) * | 2013-12-04 | 2014-03-26 | 国网安徽省电力公司信息通信分公司 | Optical path protecting instrument with band switching function and control method of optical path protecting instrument |
| CN105319160B (en) * | 2015-10-30 | 2020-06-26 | 中国电子科技集团公司第四十八研究所 | Temperature compensation device of infrared emitter for gas-liquid two-phase flow detection and infrared detection device |
| CN106785825A (en) * | 2016-12-20 | 2017-05-31 | 深圳市大京大科技有限公司 | A kind of diode pumped solid state laser |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302587C (en) * | 2001-06-22 | 2007-02-28 | 松下电器产业株式会社 | Light source apparats and its control method |
-
2008
- 2008-07-07 CN CN2008101276738A patent/CN101625499B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302587C (en) * | 2001-06-22 | 2007-02-28 | 松下电器产业株式会社 | Light source apparats and its control method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101625499A (en) | 2010-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6567435B1 (en) | VCSEL power monitoring system using plastic encapsulation techniques | |
| US10181694B2 (en) | Optical module | |
| KR101276338B1 (en) | Wavelength tunable light source | |
| JPH04345078A (en) | Laser light generating equipment | |
| KR20080012018A (en) | Laser module being able to modulate directly and laser display employing the same | |
| KR20100050513A (en) | Alignment method in wavelength-converted, wavelength-modulated semiconductor lasers | |
| CN101625499B (en) | Micro-wavelength converting optical device and autocorrecting method thereof | |
| US20210036487A1 (en) | Tunable laser and optical module | |
| US20220037855A1 (en) | Laser side mode suppression ratio control | |
| CN101673919B (en) | Micro solid-state laser module | |
| KR100898129B1 (en) | Green laser module package | |
| TWI361533B (en) | ||
| JP2005101504A (en) | Laser apparatus | |
| JP5420388B2 (en) | Optical module, method for manufacturing optical module, and method for adjusting optical module | |
| KR20070074749A (en) | Vertical external cavity surface emitting laser having a second harmonic generation crystal with flat mirror surface | |
| CN216773787U (en) | Optical fiber laser | |
| CN111954961A (en) | Optical module | |
| Lindberg et al. | Recent advances in VECSELs for laser projection applications | |
| CN208433632U (en) | The continuous light annular chamber frequency doubling system of single-frequency | |
| US20220077653A1 (en) | Radiation output device and method thereof | |
| CN112397993A (en) | Narrow-linewidth external cavity laser and optical module | |
| KR100809273B1 (en) | Laser apparatus having same beam exit position | |
| CN113363804A (en) | External cavity feedback laser device | |
| Hoefer et al. | High-performance at low cost: the challenge manufacturing frequency doubled green semiconductor lasers for mass markets | |
| TW201012017A (en) | A micro solid state laser module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120718 Termination date: 20150707 |
|
| EXPY | Termination of patent right or utility model |