CN114188683B - TSV (through silicon via) -based ultra-compact wide-stop-band SIW (substrate integrated waveguide) filter for U wave band - Google Patents

Abstract

The invention discloses an ultra-compact wide-stopband U-waveband SIW filter based on TSV, which comprises an upper layer RDL and a lower layer RDL which are arranged in parallel along the horizontal direction, wherein a silicon substrate is arranged between the upper layer RDL and the lower layer RDL, three resonant cavities which are sequentially adjacent and formed by TSV are distributed on the silicon substrate, and an input RDL port and an output RDL port are respectively arranged on two opposite sides of the upper layer RDL. The invention adopts a directly coupled topological structure and can realize three-order substrate integration.

Description

TSV-based ultra-compact wide-stop-band U-band SIW filter

Technical Field

The invention belongs to the technical field of three-dimensional integrated circuits, and relates to an ultra-compact wide-stopband U-waveband SIW filter based on TSV.

Background

With the rapid development of wireless communication technology, low-frequency band communication channels become more congested, and further, research on high-frequency band communication frequency bands is initiated. As frequencies increase, the problem of loss in transmission structures becomes more pronounced, and it is therefore necessary to design a large number of novel, high performance rf devices. The performance characteristics of rf front-end devices, represented by filters, are receiving wide attention. Microstrip lines have the characteristic of small size, but the quality factor of the waveguide is higher. The substrate integrated waveguide is a novel filter with small size of a comprehensive microstrip line and high waveguide quality factor, and is deeply researched by filter researchers at home and abroad.

The size of the soi waveguide transmission structure has a large relationship with the dielectric constant of the substrate material because wavelength is inversely proportional to the relative dielectric constant. At present, most of substrate integrated waveguide filters are designed by using a dielectric substrate with a relative constant of 2.2, and with the development of millimeter wave communication technology, the characteristics of millimeter waves are continuously discovered and applied to the military field and the civil field, so that a filter for filtering in a U-band is required to be provided.

Disclosure of Invention

The invention aims to provide an ultra-compact wide-stop-band SIW (substrate integrated waveguide) filter based on TSV (through silicon via), wherein the filter adopts a directly-coupled topological structure to realize three-order substrate integrated filtering.

The technical scheme includes that the ultra-compact wide-stopband U-band SIW filter based on the TSV comprises an upper layer RDL and a lower layer RDL which are arranged in parallel along the horizontal direction, a silicon substrate is arranged between the upper layer RDL and the lower layer RDL, three resonant cavities which are adjacent in sequence and formed by the TSV are distributed on the silicon substrate, and an input RDL port and an output RDL port are arranged on two opposite sides of the upper layer RDL respectively.

The invention is also characterized in that:

the three resonant cavities are coupled in a windowing mode.

The three resonant cavities are respectively: the resonant cavity comprises a first resonant cavity, a second resonant cavity and a third resonant cavity, wherein a window A is arranged between the first resonant cavity and the second resonant cavity, and a window B is arranged between the second resonant cavity and the third resonant cavity.

The window A is arranged on a common side arm of the first resonant cavity and the second resonant cavity; the window B is arranged on a common side arm of the second resonant cavity and the third resonant cavity.

The input RDL port is positioned at one side of the first resonant cavity; the output RDL port is located on one side of the third resonator.

The invention has the beneficial effects that: the invention relates to a three-order substrate integrated waveguide direct coupling filter, which adopts an upper metal layer (copper) RDL structure and a lower metal layer (copper) RDL structure as a high-low level area of a filter circuit respectively, the upper RDL structure and the lower RDL structure are used as high-low level areas of the filter circuit respectively, TSV is adopted between the upper RDL structure and the lower RDL structure to arrange and realize a direct coupling function together with the upper RDL structure and the lower RDL structure, and meanwhile, two sides of the upper RDL structure are respectively connected with an input RDL section and an output RDL section. The filter is third order, i.e. has three resonant cavities. The substrate integrated waveguide filter is designed by adopting the high-resistance silicon substrate with the relative dielectric constant of 11.9, so that the obvious size and structure miniaturization can be realized.

Drawings

FIG. 1 is a three-dimensional view of a TSV based ultra-compact wide stop band U-band SIW filter of the present invention;

FIG. 2 is a top view of the TSV based ultra-compact wide stop band U-band SIW filter of the present invention (upper RDL and TSV parts);

FIG. 3 is a simulation graph of the ultra-compact wide-stopband U-band SIW filter based on TSV according to the present invention in HFSS (High Frequency Structure Simulator).

In the figure, 1, an upper layer RDL,2, a lower layer RDL,4, an input RDL port, 5, an output RDL port, 6, a first resonant cavity, 7, a second resonant cavity, 8, a third resonant cavity, 9, a window A,10, a window B and 11 TSV.

Detailed Description

The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

The ultra-compact wide-stopband U-band SIW (substrate integrated waveguide) filter based on the TSV comprises an upper layer RDL1 and a lower layer RDL2 which are arranged in parallel along the horizontal direction, a silicon substrate (which is a silicon substrate and is compatible with the existing common silicon handicraft) is arranged between the upper layer RDL1 and the lower layer RDL2, three resonant cavities which are sequentially adjacent and formed by the TSV are distributed on the silicon substrate, and an input RDL port 4 and an output RDL port 5 are respectively arranged on two opposite sides of the upper layer RDL 1. RDL denotes a rewiring layer.

The three resonant cavities are coupled in a windowing mode.

The three resonant cavities are respectively: the resonant cavity comprises a first resonant cavity 6, a second resonant cavity 7 and a third resonant cavity 8, wherein a window A9 is arranged between the first resonant cavity 6 and the second resonant cavity 7, and a window B10 is arranged between the second resonant cavity 7 and the third resonant cavity 8. The window A9 is arranged on a common side arm of the first resonant cavity 6 and the second resonant cavity 7; the window B10 is arranged on a common side arm of the second resonator 7 and the third resonator 8.

The input RDL port 4 is located at one side of the first resonator 6; the output RDL port 5 is located to one side of the third resonator 8.

The input RDL port 4 is 265 μm long and 630 μm wide. TSV11 had a diameter of 50 μm and a height of 301 μm. Upper RDL1 and lower floor RDL2 constitute by the rectangle, and the size of upper RDL1 is: has a width of 909 μm and a length of 2663 μm. The dimensions of the lower RDL2 are: 1918 μm wide and 3293 μm long.

The length and width of the first cavity 6 are both 839 μm.

The second cavity 7 is 884 μm long and wide.

The third cavity 8 is 890 μm long and wide.

The width of the window A9 between the first resonator 6 and the second resonator 7 is 537 μm.

The width of the window B10 between the second resonator cavity 7 and the third resonator cavity 8 is 425 μm.

As shown in fig. 2, 3 TSVs 11 from top to bottom in the region I, 3 TSVs 11 from top to bottom in the region III, 15 TSVs 11 from left to right in the region IV, and 8 TSVs 11 from top to bottom in the region V form four side arms of the first resonant cavity 6;

the region VI includes 14 TSVs 11 from left to right, the region VII includes 13 TSVs 11 from top to bottom, the region VIII includes 8 TSVs 11 from left to right, and the region V includes four side arms of the second resonant cavity 7.

The total 13 TSVs 11 in the region IX from top to bottom, the total 3 TSVs in the region XI from top to bottom, the total 3 TSVs 11 in the region X from top to bottom, and the region VIII form four side arms of the third resonant cavity 8.

The coupling structure between the input RDL port 4 and the first resonant cavity 6 is the same as that between the output RDL port 5 and the third resonant cavity 8, and both feed in a mode of combining a microstrip line and a coplanar waveguide. So that a good feeding effect is achieved with a sufficiently small size.

FIG. 3 is a simulation diagram of the ultra-compact wide stop band U-band SIW filter based on TSV according to the present invention; as can be seen from FIG. 3, the pass band insertion loss (S) ₂₁ ) Within 2.2dB, the corresponding frequency band is 40.93GHz-41.87GHz, and the central frequency f ₀ And 41.4GHz, the calculated bandwidth is 0.9GHz. Corresponding return loss (S) in the passband ₁₁ ) The minimum is 10.44dB. Out-of-band property of 1.0867 x f ₀ -1.329*f ₀ The corresponding insertion loss is higher than 25dB.

Claims (1)

1. Ultra-compact wide stop band U wave band SIW filter based on TSV, its characterized in that: the device comprises an upper layer RDL and a lower layer RDL which are arranged in parallel along the horizontal direction, wherein a silicon substrate is arranged between the upper layer RDL and the lower layer RDL, three resonant cavities which are sequentially adjacent and formed by TSVs are distributed on the silicon substrate, and an input RDL port and an output RDL port are respectively arranged on two opposite sides of the upper layer RDL;

the three resonant cavities are coupled in a windowing mode;

the three resonant cavities are respectively: the resonant cavity comprises a first resonant cavity, a second resonant cavity and a third resonant cavity, wherein a window A is arranged between the first resonant cavity and the second resonant cavity, and a window B is arranged between the second resonant cavity and the third resonant cavity;

the window A is arranged on the common side wall of the first resonant cavity and the second resonant cavity; the window B is arranged on the common side wall of the second resonant cavity and the third resonant cavity;

the input RDL port is positioned at one side of the first resonant cavity; the output RDL port is located on one side of the third resonator.

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