CN114171867B - Compact half-mode substrate integrated waveguide balance filter - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
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- H—ELECTRICITY
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- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract
The invention relates to a compact half-mode substrate integrated waveguide balance filter which comprises a half-mode substrate integrated waveguide, a metal blind hole array and an artificial surface plasmon structure. The metal blind hole array and the artificial surface plasmon structure are both positioned in a dielectric substrate of the half-mode substrate integrated waveguide, the metal blind hole array is positioned in a space surrounded by the metal through holes, and the artificial surface plasmon structure is positioned above the metal blind hole array. According to the invention, the metal blind hole array is introduced into the half-mode substrate integrated waveguide, and the artificial surface plasmon structure is etched above the metal blind hole array, so that the regulation and control of the slow wave characteristic of the half-mode substrate integrated waveguide are realized, the problems of overlarge volume of the half-mode substrate integrated waveguide balance filter, low compactness during microwave circuit integration and poor out-of-band characteristic are solved, and the miniaturization and good out-of-band rejection characteristic of the balance filter structure are realized.
Description
Technical Field
The invention relates to the technical field of microwave communication, in particular to a compact half-mode substrate integrated waveguide balance filter loaded by artificial surface plasmons and having excellent out-of-band characteristics.
Background
With the rapid development of modern communication technology, the balanced filter plays a key role in wireless communication because of the advantages of strong anti-interference capability and easy integration with other balanced circuits and antennas. A well-designed balanced filter refers to a filter that is capable of rejecting a common-mode (CM) signal while responding to a differential-mode (DM) signal over a range of frequencies, the performance of the balanced filter being largely dependent on the rejection of the CM signal without affecting the DM signal. Heretofore, balanced filters designed based on various planar transmission line structures such as microstrip lines have been proposed, but all of the above transmission line structures have an open structure and have a problem of energy leakage.
SIW (Substrate Integrated Waveguide) is used in the design of balanced filters because of its excellent properties of low loss, low cross talk, easy integration with planar microwave circuits and high power capability, however the cut-off frequency of the Substrate Integrated Waveguide is related to the lateral dimensions, which limit its application in compact microwave circuits. Subsequently, balanced filters based on various types of SIW variant structures were proposed in succession, wherein balanced filters based on HMSIW (half-mode substrate integrated waveguide), QMSIW (quarter-mode substrate integrated waveguide) designs, which are able to achieve a reduction in lateral dimensions compared to balanced filters based on SIW designs, in which only a reduction in lateral dimensions of SIW is focused, however, their operating bandwidth is still narrow.
In view of the above, there is a need for a balanced filter which can reduce the vertical size of the SIW and realize a compact design of the overall size of the microwave device.
Disclosure of Invention
The invention aims to provide a compact half-mode substrate integrated waveguide balance filter, which is characterized in that an artificial surface plasmon structure with a sub-wavelength structure is etched above a metal blind hole array, the slow wave characteristic of the half-mode substrate integrated waveguide is regulated and controlled, and the miniaturization of the structure of the balance filter is realized.
In order to achieve the purpose, the invention provides the following scheme:
a compact half-mode substrate integrated waveguide balance filter comprises a half-mode substrate integrated waveguide, a metal blind hole array and an artificial surface plasmon structure;
the metal blind hole array and the artificial surface plasmon structure are both positioned in a dielectric substrate of the half-mode substrate integrated waveguide; the metal blind hole array is positioned in a space surrounded by the metal through holes of the half-mode substrate integrated waveguide; the artificial surface plasmon structure is positioned above the metal blind hole array; the artificial surface plasmon structure is a periodic groove structure of a sub-wavelength plane.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a compact half-mode substrate integrated waveguide balance filter, which comprises a half-mode substrate integrated waveguide, a metal blind hole array and an artificial surface plasmon structure. The metal blind hole array and the artificial surface plasmon structure are both positioned in a dielectric substrate of the half-mode substrate integrated waveguide, the metal blind hole array is positioned in a space surrounded by the metal through holes, and the artificial surface plasmon structure is positioned above the metal blind hole array. According to the invention, the metal blind hole array is introduced into the half-mode substrate integrated waveguide, and the artificial surface plasmon structure is etched above the metal blind hole array, so that the regulation and control of the slow wave characteristic of the half-mode substrate integrated waveguide are realized, the problems of overlarge volume of the half-mode substrate integrated waveguide balance filter, low compactness during microwave circuit integration and poor out-of-band characteristic are solved, and the miniaturization and good out-of-band rejection characteristic of the balance filter structure are realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a perspective structural view of a balance filter provided in embodiment 1 of the present invention;
fig. 2 is a top view of a balance filter provided in embodiment 1 of the present invention;
fig. 3 is a cross-sectional view of a balanced filter perpendicular to a transmission direction according to embodiment 1 of the present invention;
fig. 4 is a schematic diagram illustrating a relationship between slow wave characteristics and cycle size provided in embodiment 1 of the present invention;
FIG. 5 is a schematic diagram illustrating a relationship between slow-wave characteristics and a height of a metal blind via array according to embodiment 1 of the present invention;
FIG. 6 is a schematic diagram illustrating a relationship between a slow wave characteristic and a groove depth according to embodiment 1 of the present invention;
FIG. 7 is a diagram showing a differential mode S of the balanced filter provided in embodiment 1 of the present invention DD11 and S DD21 parameters.
Fig. 8 shows a common mode S of the balanced filter provided in embodiment 1 of the present invention CC11 and S CC21 parameters.
Description of the symbols:
1-upper metal patch; 2-an upper dielectric substrate; 3-lower dielectric substrate; 4-lower metal patch; 5-a metal via; 6-microstrip feed line; 7-metal blind holes; 8-a metal blind hole array; 9-artificial surface plasmon structures; 10-a groove; 11-L-shaped bent extension grooves.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a compact half-mode substrate integrated waveguide balance filter, which can flexibly control the slow wave characteristic of a half-mode substrate integrated waveguide by introducing a metal blind hole array and etching an artificial surface plasmon structure with a sub-wavelength structure above the metal blind hole array, and realizes the miniaturization and good out-of-band rejection characteristic of the balance filter structure.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description thereof.
Example 1:
the embodiment is used for providing a compact half-mode substrate integrated waveguide balance filter, and the balance filter comprises a half-mode substrate integrated waveguide, a metal blind hole array and an artificial surface plasmon structure. The metal blind hole array and the artificial surface plasmon structure are both located in a dielectric substrate of the half-mode substrate integrated waveguide, the metal blind hole array is located in a space surrounded by metal through holes of the half-mode substrate integrated waveguide, the artificial surface plasmon structure is located above the metal blind hole array, and the artificial surface plasmon structure is a periodic groove structure of a sub-wavelength plane.
In the embodiment, the metal blind hole array is introduced into the half-mode substrate integrated waveguide and the sub-wavelength artificial surface plasmon structure is etched above the metal blind hole array, so that the slow wave characteristic of the half-mode substrate integrated waveguide can be flexibly controlled, and the transmission structure formed by mixing the half-mode substrate integrated waveguide and the artificial surface plasmon structure is adopted.
The half-mode substrate integrated waveguide used in this embodiment is described below:
as shown in fig. 1, fig. 2 and fig. 3, the half-mode substrate integrated waveguide includes a dielectric substrate, an upper metal patch 1, a lower metal patch 4 and a metal via 5, where the dielectric substrate includes an upper dielectric substrate 2 and a lower dielectric substrate 3. The upper metal patch 1, the upper dielectric substrate 2, the lower dielectric substrate 3 and the lower metal patch 4 are sequentially stacked from top to bottom, the lengths of the upper dielectric substrate 2, the lower dielectric substrate 3 and the lower metal patch 4 are equal, the widths of the upper dielectric substrate, the lower dielectric substrate and the lower metal patch 4 are equal, and the lengths of the upper metal patch 1 and the lower metal patch 4 are equal and the widths of the upper metal patch 1 and the lower metal patch 4 are different. The lengths of the upper metal patch 1, the upper dielectric substrate 2, the lower dielectric substrate 3 and the lower metal patch 4 are all lmThe width of the upper metal patch 1 is wtThe widths of the upper dielectric substrate 2, the lower dielectric substrate 3 and the lower metal patch 4 are wb。
As shown in fig. 2, the upper layer metal patch 1 includes two pairs of microstrip feed lines, including four microstrip feed lines 6 in total. Two pairs of microstrip feed lines are positioned above the upper-layer dielectric substrate 2, and each microstrip feed line 6 extends outwards from one side of the upper-layer metal patch 1 along the width direction of the upper-layer metal patch 1. The length and the width of each microstrip feed line 6 are equal to meet the working condition of the balanced filter, and the sum of the length of the microstrip feed line 6 and the width of the upper-layer metal patch 1 is equal to the width of the lower-layer metal patch 4. The microstrip feed line 6 has a length wb-wtWidth of wk. In FIG. 2, bitThe distance between the two microstrip feed lines 6 in the middle is laThe pitch between the two microstrip feed lines 6 on the left side is equal to the pitch between the two microstrip feed lines 6 on the right side, and both are lbThat is, if the microstrip feed lines 6 are arranged from left to right, the distance between the first microstrip feed line 6 and the second microstrip feed line 6 is lbThe distance between the second microstrip feed line 6 and the third microstrip feed line 6 is laThe distance between the third microstrip feed line 6 and the fourth microstrip feed line 6 is lb. A metal blind hole 7 is arranged in the lower dielectric substrate 3 at a position corresponding to the microstrip feed line 6, that is, a metal blind hole 7 is arranged below the microstrip feed line 6 for impedance matching. All the blind metal holes 7 have the same diameter d3。
The metal via hole 5 vertically penetrates through the upper dielectric substrate 2 and the lower dielectric substrate 3, and two ends of the metal via hole 5 are respectively connected with the upper metal patch 1 and the lower metal patch 4, namely, the metal via hole 5 is simultaneously connected with the upper metal patch 1 and the lower metal patch 4. As shown in fig. 2, the metal vias 5 may be in three rows, the blind metal via array 8 is located in a space formed by the three rows of metal vias 5, all the metal vias 5 have the same diameter, which is d1。
In order to reduce the longitudinal dimension of the SIW, and to realize a compact design of the overall size of the microwave device, the introduction of the slow wave effect in the SIW structure has been widely studied. When light waves (electromagnetic waves) are incident on a metal and dielectric interface, free electrons on the surface of the metal oscillate collectively, the electromagnetic waves and the free electrons on the surface of the metal are coupled to form near-field electromagnetic waves which propagate along the surface of the metal, resonance is generated if the oscillation frequency of the electrons is consistent with the frequency of the incident light waves, and the energy of the electromagnetic fields in the resonance state is effectively converted into the collective vibration energy of the free electrons on the surface of the metal, so that a special electromagnetic mode is formed: the electromagnetic field is confined to a small range of the metal surface and enhanced, and this phenomenon is called a surface plasmon phenomenon. The surface plasmon is a mixed excited state generated by interaction between freely vibrating electrons and photons existing at an interface between a metal and a dielectric medium, and is a surface electromagnetic wave propagating along the interface and exponentially attenuated in a direction perpendicular to the interface. The metal surface of the artificial structure can bind an electromagnetic wave to its surface to form a surface wave similar to a surface plasmon mode, which is called an artificial surface plasmon. The artificial surface plasmon can control the slow wave characteristic and cut-off frequency of the metal by changing the structural parameters of the metal, so that the artificial surface plasmon has unique superiority and development prospect in a microwave band.
In the embodiment, a metal blind hole array 8 loaded in a lower-layer dielectric substrate 3 and an artificial surface plasmon structure 9 etched above the metal blind hole array 8 are arranged in a half-mode substrate integrated waveguide. The metal blind hole array 8 vertically penetrates through the lower dielectric substrate 3, that is, the height of the metal blind hole array 8 is equal to that of the lower dielectric substrate 3. The diameters of the metal blind hole arrays 8 are equal and are d2The metal blind via array 8 may have any shape as long as the periodic distribution is satisfied. As shown in fig. 2, the blind metal via array 8 can be designed to be rectangular for convenient design. The artificial surface plasmon structure 9 is located between the upper dielectric substrate 2 and the lower dielectric substrate 3, located above the metal blind hole array 8, and connected with the metal blind hole array 8.
The dielectric constants of the upper dielectric substrate 2 and the lower dielectric substrate 3 are the same, the thicknesses of the substrates are different, and the thickness of the upper dielectric substrate 2 is h1The thickness of the lower dielectric substrate 3 is h2I.e. the height of the metal via 5 is (h)1+h2) The height of the metal blind hole array 8 is h2. Because the height of the metal blind hole array 8 is equal to that of the lower dielectric substrate 3, and the higher the height of the metal blind hole array 8 is, the larger coupling capacitance can be introduced, a stronger slow wave effect is generated, the wavelength is reduced, and the reduction of the transverse and longitudinal dimensions of the waveguide is realized, the preferable thickness of the lower dielectric substrate 3 is greater than that of the upper dielectric substrate 2.
Here, description is made of the artificial surface plasmon structure 9 used in the present embodiment:
as shown in fig. 1 and 2, the artificial surface plasmon structure 9 is a sub-wavelength plane periodic groove structure including an intermediate metal layer and a periodic groove formed on the intermediate metal layer and along a width direction of the intermediate metal layer. All grooves 10 of the periodic groove are flush in opening, the depth and the width of all the grooves 10 are equal, the depth of each groove 10 is l, the width of each groove 10 is w, and the depth l of each groove 10 is smaller than the width b of the middle metal layer. The period sizes of the artificial surface plasmon structures 9 may be the same, i.e., the distances p between adjacent two grooves 10 are equal.
Preferably, the artificial surface plasmon structure 9 is a periodic groove structure with a bend in a subwavelength plane, that is, the periodic groove structure has a bend extending into the groove 10, so as to enhance slow wave characteristics and achieve stronger miniaturization. Specifically, an L-shaped bending extension groove 11 is arranged between two adjacent grooves 10, a connecting portion of the L-shaped bending extension groove 11 is connected with an opening of one of the grooves 10, an extension portion of the L-shaped bending extension groove 11 extends towards the inside of the groove 10 along the depth direction of the groove 10, and the width w of the extension portion1Less than the distance p between two adjacent grooves 10. The width w of the groove 10 is smaller than the depth l of the groove 10, and the length l of the extension part1Less than the depth l of the recess 10.
By loading the metal blind hole array 8 in the half-mode substrate integrated waveguide, the equivalent capacitance value is enhanced under the condition that the equivalent inductance is not obviously changed, which is equivalent to improving the equivalent dielectric constant of the half-mode substrate integrated waveguide dielectric substrate, thereby changing the cutoff frequency and the propagation characteristic of the main mode of the half-mode substrate integrated waveguide. The embodiment adjusts the period p of the artificial surface plasmon structure 9, the depth l of the groove 10 and the height h of the metal blind hole array 82Can realize the regulation and control of the slow wave characteristic of the semi-mode substrate integrated waveguide and reduce the cut-off frequency.
In order to introduce a slow wave characteristic into a half-mode substrate integrated waveguide and realize the miniaturization of the structure size, the embodiment provides a compact half-mode substrate integrated waveguide balance filter loaded by artificial surface plasmons and having excellent out-of-band characteristics, the half-mode substrate integrated waveguide balance filter is formed by adopting two layers of dielectric substrates, an upper layer of metal patches, a lower layer of metal patches, three rows of metal through holes and two pairs of microstrip feed lines, the metal blind hole array 8 is introduced into the lower layer of dielectric substrate 3, and the artificial surface plasmons structure 9 is etched above the metal blind hole array 8, so that the transverse size and the waveguide wavelength are obviously reduced, and the excellent out-of-band rejection characteristics are generated.
In the embodiment, the artificial surface plasmon structure 9 is combined with the half-mode substrate integrated waveguide balance filter, and the slow wave characteristic of the artificial surface plasmon and the half-mode substrate integrated waveguide technology are utilized, so that the transverse and longitudinal dimensions are reduced, and good out-of-band rejection characteristic is generated. Although the half-mode substrate integrated waveguide increases the processing complexity while reducing the lateral dimension, it has a smaller volume due to a greatly reduced geometry in combination with artificial surface plasmons. The balance filter provided by the embodiment has the advantages of small volume, high compactness, simple design, good out-of-band rejection characteristic and the like as a compact half-mode substrate integrated waveguide balance filter which is loaded by artificial surface plasmons and has excellent out-of-band characteristics, and has important prospects in future microwave and terahertz waveband integrated circuits, communication systems and radar systems.
The compact half-die substrate integrated waveguide balanced filter according to the present embodiment is further described by a specific example as follows: the dielectric substrate is made of Rogers RT/duroid4350 material, the dielectric constant is 3.66, and the dielectric loss tangent is 0.004. Length l of upper metal patch 1m50mm, width wt10mm, width w of the lower metal patch 4b15.3 mm. Thickness h of the upper dielectric substrate 210.116mm, thickness h of the lower dielectric substrate 320.508 mm. Diameter d of the metal via 510.6mm, diameter d of blind metal via array 820.5mm, diameter d of the blind metal hole 731.4 mm. The width b of the artificial surface plasmon structure 9 is 7.5mm, the period p is 3mm, the depth l of the groove 10 is 6.5mm, and the width w of the extension portion11mm, length l15.5mm, distance l between two microstrip feed lines 6a10.15mm, the spacing l between the two microstrip feed lines 6 on both sidesb＝10.75mm。
Changing the cycle size p and changing the metal blind hole arrayThe effect of 8 height h2 and changing the groove 10 depth l of the artificial surface plasmon structure 9 on slow wave characteristics is shown in fig. 4, 5 and 6, respectively. In fig. 4, 5, and 6, the horizontal axis represents frequency (ghz)), the vertical axis represents slow-wave factor SWF, and SWF is defined as the velocity of light in vacuum divided by the velocity of guided phase. The simulated differential and common mode S parameters are shown in fig. 7 and 8, respectively, where the horizontal axis represents frequency (ghz) and the vertical axis represents S parameter (S-parameter (db)) in fig. 7 and 8. It can be seen that the differential mode suppresses S out of band DD21 were less than-20 dB except for individual resonance points just before 11.2GHz, exhibiting excellent out-of-band suppression characteristics of artificial surface plasmons.
Compared with the traditional half-mode substrate integrated waveguide balance filter, the compact half-mode substrate integrated waveguide balance filter with the excellent out-of-band characteristic and the artificial surface plasmon loading has the advantages of small transverse size, small loss, adjustable slow wave characteristic and excellent out-of-band rejection characteristic, and in addition, the hybrid structure is simple and compact, easy to integrate, convenient to manufacture and wide in application range, and has a wide application prospect in a microwave band.
The principle and the embodiment of the present invention are explained by applying specific examples, and the above description of the embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. A compact half-mode substrate integrated waveguide balance filter is characterized by comprising a half-mode substrate integrated waveguide, a metal blind hole array and an artificial surface plasmon structure;
the metal blind hole array and the artificial surface plasmon structure are both positioned in a dielectric substrate of the half-mode substrate integrated waveguide; the metal blind hole array is positioned in a space surrounded by the metal through holes of the half-mode substrate integrated waveguide; the dielectric substrate comprises an upper dielectric substrate and a lower dielectric substrate; the metal blind hole array vertically penetrates through the lower-layer dielectric substrate; the artificial surface plasmon structure is positioned between the upper dielectric substrate and the lower dielectric substrate, positioned above the metal blind hole array and connected with the metal blind hole array; the artificial surface plasmon structure is a periodic groove structure of a sub-wavelength plane.
2. The balanced filter of claim 1, wherein the half-die substrate integrated waveguide further comprises an upper metal patch and a lower metal patch; the upper metal patch, the upper dielectric substrate, the lower dielectric substrate and the lower metal patch are sequentially stacked from top to bottom; the metal via hole vertically penetrates through the upper-layer dielectric substrate and the lower-layer dielectric substrate, and two ends of the metal via hole are respectively connected with the upper-layer metal patch and the lower-layer metal patch.
3. The balance filter of claim 1, wherein the period sizes of the artificial surface plasmon structures are the same.
4. The balance filter of claim 1, wherein the artificial surface plasmon structure comprises an intermediate metal layer and periodic grooves formed in the intermediate metal layer and extending in a width direction of the intermediate metal layer; all the groove openings of the periodic grooves are flush, and the depth and the width of all the grooves are equal; the depth of the groove is smaller than the width of the middle metal layer.
5. The balance filter of claim 4, wherein an L-shaped bent extending groove is arranged between two adjacent grooves; the connecting part of the L-shaped bending extension groove is connected with an opening of one of the grooves, an extension part of the L-shaped bending extension groove extends towards the inside of the groove along the depth direction of the groove, and the width of the extension part is smaller than the distance between two adjacent grooves.
6. The balanced filter according to claim 5, characterized in that the width of the groove is smaller than the depth of the groove and the length of the extension is smaller than the depth of the groove.
7. The balanced filter according to claim 2, wherein the dielectric constants of the upper dielectric substrate and the lower dielectric substrate are the same, and the thicknesses of the substrates are different.
8. The balanced filter according to claim 7, characterized in that the lower dielectric substrate has a thickness greater than the thickness of the upper dielectric substrate.
9. The balanced filter according to claim 2, wherein the upper metal patch and the lower metal patch have equal lengths and unequal widths;
the upper metal patch comprises two pairs of microstrip feed lines; the microstrip feed line extends outwards from one side of the upper-layer metal patch along the width direction of the upper-layer metal patch; the length and the width of the microstrip feed line are equal; the sum of the length of the microstrip feed line and the width of the upper-layer metal patch is equal to the width of the lower-layer metal patch; and a metal blind hole is formed in the lower dielectric substrate at a position corresponding to the microstrip feed line.
10. The balanced filter according to claim 2, characterized in that the lower metal patch, the lower dielectric substrate and the upper dielectric substrate are equal in length and equal in width.
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