CN114094300B - Substrate integrated waveguide resonator based on through silicon via - Google Patents

Abstract

The invention discloses a substrate integrated waveguide resonator based on a through silicon via, which comprises an upper layer RDL and a lower layer RDL which are arranged in parallel, wherein a silicon-based substrate is arranged between the upper layer RDL and the lower layer RDL; the center of the silicon-based substrate is distributed with a single resonant cavity formed by TSV, four additional resonant cavities formed by the TSV are respectively arranged on the periphery of the single resonant cavity, and an input RDL port and an output RDL port are respectively arranged on two opposite sides of the upper RDL. The invention changes the center frequency of the resonator by changing the structural model of the resonator, thereby realizing the filtering function of different frequencies under the terahertz frequency band.

Description

Substrate integrated waveguide resonator based on silicon through hole

Technical Field

The invention belongs to the technical field of three-dimensional integrated circuits, and relates to a substrate integrated waveguide resonator based on a through silicon via.

Background

With the rapid development of the 5G technology, the design of a wireless communication device with high performance, low cost and easy integration is very important, and a microwave resonator is one of the elements capable of realizing high-performance radio frequency filtering, and has attracted attention due to its advantages of high performance, low cost, small size and the like. Heretofore, the mainstream wave guide structures are microstrip lines and waveguides, but both have some disadvantages such as difficulty in integration of the waveguides with a planar structure, and large dielectric loss and conductor loss of the microstrip lines. In order to improve the problems, an SIW structure which has the advantages of both high quality factor and low loss of the rectangular waveguide and small size and easy integration of the microstrip line is developed, and the structure has very important significance for the development of microwave devices.

Through Silicon Vias (TSVs) are three-dimensional structures penetrating through a dielectric substrate, and vertical interconnection between chips is realized by making through holes between the chips and between wafers. Under the condition of not reducing process nodes, the stacking density of the chips in the three-dimensional direction can be maximized, the overall dimension is minimized, the chip speed and the performance of low power consumption are greatly improved, the integration level of a circuit and the quality and performance of a circuit system can be effectively improved, and the production cost is reduced.

With the increase of communication frequency band of wireless communication system, the operating frequency band of wireless communication system is gradually moving to high frequency band, so that higher requirement is put on radio frequency device or system. The radio frequency device designed by utilizing the substrate integrated waveguide structure can work in a terahertz wave band, has good in-band characteristics and is easy to integrate with other planar structures.

Disclosure of Invention

The invention aims to provide a substrate integrated waveguide resonator based on a through silicon via, which can realize the filtering function of different frequencies in a terahertz frequency band.

The substrate integrated waveguide resonator comprises an upper layer RDL and a lower layer RDL which are arranged in parallel, wherein a silicon-based substrate is arranged between the upper layer RDL and the lower layer RDL; the center of the silicon-based substrate is distributed with a single resonant cavity formed by TSV, four additional resonant cavities formed by the TSV are respectively arranged on the periphery of the single resonant cavity, and an input RDL port and an output RDL port are respectively arranged on two opposite sides of the upper RDL.

The invention is also characterized in that:

the four additional resonant cavities are coupled with the single resonant cavity in a windowing mode.

The four additional resonant cavities are: a first added resonant cavity, a second added resonant cavity, a third added resonant cavity, and a fourth added resonant cavity;

the first additional resonant cavity is symmetrically arranged relative to the single resonant cavity and the second additional resonant cavity; the third additional resonant cavity is symmetrically arranged with respect to the single resonant cavity and the fourth additional resonant cavity.

The coupling structure between the input RDL and the first added resonant cavity is the same as the coupling structure between the output RDL and the third added resonant cavity, and feeding is realized by adopting a mode of combining a microstrip line and a coplanar waveguide.

The upper layer RDL is provided with four coplanar waveguide slot gaps, and the four coplanar waveguide slot gaps are the same in size.

The invention has the beneficial effects that: the resonator realizes the effect of changing the center frequency by modifying the structural model of the resonator, realizes the passband frequency of 330.38 GHz-332.7 GHz, has the in-band maximum insertion loss of 2dB, has good transmission effect and lower loss compared with the in-band loss of 3dB in the prior art, has the in-band maximum return loss of 13.96dB, and has stable and excellent return loss and insertion loss performance for a radio frequency filter. In addition, the structure utilizes the TSV technology to realize excellent electrical characteristics, the center frequency of the structure is about 330GHz, the structure belongs to a terahertz wave band, and the structure can be applied to the application of the 5G technology and wireless systems such as communication, radar, electronic countermeasure and astronomical observation. And the passband bandwidth is about 2GHz, and compared with the center frequency, the broadband narrow-band filter can also be used as a narrow-band filter. The resonator has the characteristics of stable performance, miniaturization, high efficiency, low loss and the like, and can be used as a radio frequency filter element for realizing good in-band characteristics and out-of-band characteristics in a terahertz frequency band.

Drawings

FIG. 1 is a three-dimensional view of a through-silicon-via based substrate integrated waveguide resonator of the present invention;

FIG. 2 is a top view of a through-silicon via based substrate integrated waveguide resonator of the present invention (upper RDL and TSV sections);

FIG. 3 is a top view of a through-silicon-via based substrate integrated waveguide resonator of the present invention (upper RDL, lower RDL and TSV sections);

FIG. 4 is a parameter simulation diagram of a through-silicon-via-based substrate integrated waveguide resonator according to the present invention.

In the figure, 1 TSV,2, input RDL,3, output RDL,4, upper RDL,5, lower RDL,6, waveguide coplanar groove notch.

Detailed Description

The invention is described in detail below with reference to the drawings and the detailed description.

The invention relates to a TSV (through silicon via) based substrate integrated waveguide resonator, which adopts an upper copper layer RDL structure and a lower copper layer RDL structure as high and low level areas of a resonator circuit respectively as shown in figure 1, the middles of an upper RDL4 layer and a lower RDL5 layer are distributed by TSV1, a cross coupling topological function of combining positive coupling and negative coupling is realized together with the upper RDL4 layer and the lower RDL5 layer, and in addition, the two sides of the upper RDL4 layer are respectively connected with an input RDL2 and an output RDL3. The resonator has five resonant cavities. The middle is a single resonant cavity, and the other four additional cavities are coupled with the single resonant cavity through windowing.

The coupling structure between the input RDL2 and the first added cavity is the same as the coupling structure between the output RDL3 and the third added cavity, and feeding is realized by adopting a mode of combining a microstrip line and a coplanar waveguide. In addition, the resonator is of a symmetrical structure;

the input RDL2 and the output RDL3 are symmetrically arranged, the first added cavity is symmetrical to the second added cavity, the third added cavity is symmetrical to the fourth added cavity, and the single resonant cavity is a symmetrical center.

The first additional cavity is located on the left side of the single resonant cavity, the second additional cavity is located on the right side of the single resonant cavity, the third additional cavity is located on the lower side of the single resonant cavity, and the fourth additional cavity is located on the upper side of the single resonant cavity.

The size of the input RDL2 is: the length is 90 μm and the width is 47.3. Mu.m.

The TSV1 dimensions are: diameter 5 μm and height 90 μm.

The dimensions of the upper layer RDL4 are: 170 μm wide, 240 μm long and 5 μm thick.

The dimensions of the lower RDL5 are: 240 μm wide, 264.6 μm long and 5 μm thick.

And taking the distance of the central axes of the TSV at two sides as the distance of the single resonant cavity. The distance of the window between the two resonant cavities is the distance of the central axes of the two TSVs in the middle of the collinear position.

As shown in fig. 2 and 3, the single resonant cavity includes four sidewalls formed by TSVs; the four side walls are respectively: a first side wall formed by three TSVs 1 from d1 to d3, a second side wall formed by three TSVs 1 from u1 to u3, a third side wall formed by three TSVs 1 from i1 to i3, and a fourth side wall formed by three TSVs 1 from m1 to m 3;

the first additional resonant cavity comprises four side walls formed by TSV; the four side walls are respectively: a first side wall formed by two TSV1 s from e1 to e2, a second side wall formed by three TSV1 s from f1 to f3, a third side wall formed by three TSV1 s from g1 to g3, and a fourth side wall formed by two TSV1 s from h1 to h 2;

the second additional resonant cavity comprises four side walls formed by TSV; the four side walls are respectively: a first side wall formed by two TSV1 s from n1 to n2, a second side wall formed by three TSV1 s from o1 to o3, a third side wall formed by three TSV1 s from s1 to s3, and a fourth side wall formed by two TSV1 s from t1 to t 2;

the third added resonant cavity comprises five side walls formed by TSV 1; the five side walls are respectively: a first side wall formed by seventeen TSV1 from r1 to r17, a second side wall formed by three TSV1 from k1 to k3, a third side wall formed by three TSV1 from q1 to q3, a fourth side wall formed by three TSV1 from j1 to j3, and a fifth side wall formed by three TSV1 from p1 to p 3;

the fourth added resonator includes five sidewalls formed by TSVs 1, where the five sidewalls are: a first side wall formed by fifteen TSVs 1 from a1 to a15, a second side wall formed by three TSVs 1 from b1 to b3, a third side wall formed by four TSVs 1 from c1 to c4, a fourth side wall formed by four TSVs 1 from v1 to v4, and a fifth side wall formed by three TSVs 1 from w1 to w 3;

the size of the single resonant cavity is as follows: the length is 180 μm and the width is 110 μm.

The first added resonator size is: the length is 155 μm and the width is 30 μm.

The second added resonator size is: the length is 140 μm and the width is 30 μm.

The third added resonator size is: the length is 160 μm and the width is 30 μm.

The fourth added resonator size is: 160 μm in width and 30 μm in width.

The single resonator is spaced 125 μm from the first added resonator window.

The single cavity is spaced 120 μm from the second added cavity window.

The single resonant cavity is spaced 90 μm from the third added cavity window.

The single resonant cavity is spaced 80 μm from the fourth added cavity window.

Three TSVs 1 (d 1-d 3) at the upper left corner of the single resonant cavity are vertically arranged at equal intervals, and the distance between central axes of the two TSVs is 7.5 mu m;

three TSVs 1 (i 1-i 3) at the lower left corner of the single resonant cavity are vertically arranged at equal intervals, and the distance between the central axes of the two TSVs is 8 mu m;

three TSVs 1 (u 1-u 3) at the right upper corner of the single resonant cavity are vertically arranged at equal intervals, and the distance between central axes of the two TSVs is 9 mu m;

three TSV1 (m 1-m 3) at the lower right corner of the single resonant cavity are vertically arranged at equal intervals, and the distance between central axes of the two TSV is 9 mu m;

the distance between the central axes of the two TSVs at the upper corner and the lower corner (the corner formed by the first side wall and the second side wall and the corner formed by the third side wall and the fourth side wall) of the first added cavity is 9 mu m;

the distance between the central axes of the two TSVs at the two corners of the upper side of the fourth added cavity (the corner formed by the first side wall and the second side wall and the corner formed by the first side wall and the fifth side wall in the fourth added resonant cavity) is 7.5 mu m; the distance between the central axes of the two TSVs at the two corners of the lower side of the fourth added cavity is 5 mu m. Except for the above indications, the wheelbase in the other two adjacent TSVs is 10 μm. In addition, the upper layer RDL4 has four coplanar waveguide slot notches 6 and the four coplanar waveguide slot notches 6 have the same size, 5 μm long and 2.5 μm wide. The lower layer RDL is complete without a slot notch.

The substrate integrated waveguide resonator based on the silicon through hole adopts the silicon-based substrate, is compatible with the existing common silicon process product, is easy to integrate with a mainstream CMOS circuit, and has lower production cost.

The resonator adopts a SIW structure, so that the frequency can be improved, and the filtering effect of a terahertz frequency band is realized.

The feeder line adopts a mode of combining a microstrip line and a coplanar waveguide, so that a good feeding effect is realized with a small enough size.

As can be seen from fig. 4, the center frequency f =331.5GHz, the passband insertion loss 2dB inner frequency band is 330.39-332.62ghz, the 2db bandwidth BW =2.32GHz, and the passband inner return loss is at least 12.97dB. In addition, in the process of changing the structure, the passband bandwidth is smaller than the center frequency and is always maintained in a smaller range, and the designed resonator can be used as a narrow-band filter and has higher selectivity.

Claims (1)

1. A substrate integrated waveguide resonator based on a through silicon via is characterized in that: the device comprises an upper layer RDL and a lower layer RDL which are arranged in parallel, wherein a silicon-based substrate is arranged between the upper layer RDL and the lower layer RDL; the center of the silicon substrate is distributed with a single resonant cavity formed by TSV, four additional resonant cavities formed by the TSV are respectively arranged on the periphery of the single resonant cavity, and the two opposite sides of the upper RDL are respectively provided with an input RDL port and an output RDL port;

the four additional resonant cavities are coupled with the single resonant cavity in a windowing mode;

the four additional resonant cavities are respectively: a first added resonant cavity, a second added resonant cavity, a third added resonant cavity, and a fourth added resonant cavity;

the first additional resonant cavity is symmetrically arranged relative to the single resonant cavity and the second additional resonant cavity; the third additional resonant cavity is symmetrically arranged relative to the single resonant cavity and the fourth additional resonant cavity;

the coupling structure between the input RDL port and the first added resonant cavity is the same as the coupling structure between the output RDL port and the second added resonant cavity, and feeding is realized by adopting a mode of combining a microstrip line and a coplanar waveguide;

the upper layer RDL is provided with four coplanar waveguide slot gaps, and the four coplanar waveguide slot gaps are the same in size.

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