CN114156411B

CN114156411B - Thin-film solar cell module, manufacturing method thereof and electric device

Info

Publication number: CN114156411B
Application number: CN202210116895.XA
Authority: CN
Inventors: 郭文明; 涂保; 陈长松; 梁伟风; 陈国栋; 郭永胜; 欧阳楚英
Original assignee: Contemporary Amperex Technology Co Ltd
Current assignee: Contemporary Amperex Technology Co Ltd
Priority date: 2022-02-08
Filing date: 2022-02-08
Publication date: 2022-07-12
Anticipated expiration: 2042-02-08
Also published as: CN114156411A; WO2023151209A1

Abstract

The embodiment of the application provides a thin-film solar cell module, a manufacturing method thereof and an electricity utilization device, and belongs to the technical field of solar cells. The thin film solar cell module is provided with a plurality of first notches, a plurality of second notches and a plurality of third notches at intervals along a first direction. The second notch groove comprises a plurality of sub notch grooves arranged at intervals along the second direction, the third notch groove comprises a plurality of semi-closed areas and connecting parts, the semi-closed areas are arranged at intervals along the second direction, each connecting part is connected with each of the two sides of each semi-closed area along the second direction, each semi-closed area at least partially surrounds one sub notch groove, and the first notch grooves are arranged towards the openings of the semi-closed areas. The distance between the first notch groove and the third notch groove can be reduced, the dead zone area between the first notch groove and the third notch groove is effectively reduced, the effective power generation area is increased, the current loss of the thin-film solar cell module caused by the dead zone area is reduced, and the output efficiency of the whole thin-film solar cell module is improved.

Description

Thin-film solar cell module, manufacturing method thereof and electric device

Technical Field

The embodiment of the application relates to the technical field of solar cells, in particular to a thin-film solar cell module, a manufacturing method thereof and an electric device.

Background

The thin-film solar cell is a photoelectric device which directly generates electricity by utilizing sunlight, and has the advantages of small mass, thin thickness, flexibility, low raw material cost and the like. In recent years, solar thin film batteries have been rapidly developed and are increasingly used in the field of photovoltaic power generation. The solar thin film battery materials which are industrially prepared at present mainly comprise cadmium telluride, copper indium gallium selenide, amorphous silicon, gallium arsenide, perovskite and other thin film batteries. In recent years of development in the photovoltaic field, perovskite solar thin film batteries are novel batteries with great potential to replace the dominating position of silicon-based solar batteries.

In the prior art, when a sub-cell is formed by cutting and scribing for many times, a large dead zone is formed, and photoelectric conversion cannot be generated in the dead zone, so that no contribution is made to power improvement of the perovskite solar cell module.

Disclosure of Invention

In view of the above problems, embodiments of the present application provide a thin film solar cell module, a manufacturing method thereof, and an electric device, which can reduce a distance between a first notch and a third notch, and effectively reduce a dead zone area between the first notch and the third notch, so that an output efficiency of the entire thin film solar cell module is improved.

According to a first aspect of embodiments of the present application, there is provided a thin film solar cell module comprising a plurality of sub-cells. The sub-cell comprises a substrate, a first electrode layer, a first charge transport layer, a light absorption layer, a second charge transport layer and a second electrode layer which are sequentially stacked. The thin film solar cell module is provided with a plurality of first notches, a plurality of second notches and a plurality of third notches at intervals along a first direction.

The first notch penetrates through the first electrode layer along the stacking direction, and the first notch is filled with the first charge transport layer. The second notch penetrates through the second charge transport layer, the light absorption layer and the first charge transport layer along the stacking direction, and the second notch is filled with the second electrode layer. The second notch groove comprises a plurality of sub notch grooves arranged at intervals along a second direction, and the first direction, the stacking direction and the second direction are mutually vertical. The third notch groove penetrates through the second electrode layer, the second charge transmission layer, the light absorption layer and the first charge transmission layer along the stacking direction, the third notch groove comprises a plurality of semi-closed areas and connecting parts, the semi-closed areas are arranged at intervals along the second direction, the connecting parts are connected to two sides of each semi-closed area along the second direction, each semi-closed area at least partially surrounds one sub notch groove, and the first notch groove is arranged towards the opening of each semi-closed area.

Through the scheme, the distance between the first notch groove and the third notch groove can be reduced, the dead zone area between the first notch groove and the third notch groove is effectively reduced, the effective power generation area is increased, the current loss of the thin-film solar cell module caused by the dead zone area is reduced, and the output efficiency of the whole thin-film solar cell module is improved.

In some embodiments, a projection of the connecting portion in the stacking direction falls at least partially into the first notch.

Through the scheme, the distance between the connecting part and the first notch groove can be reduced, namely, the distance between the third notch groove and the first notch groove is reduced, so that the dead zone area between the first notch groove and the third notch groove can be effectively reduced, the effective power generation area is increased, and the power of the thin-film solar cell module is improved.

In some embodiments, the thin film solar cell module further comprises a grid line electrode layer. The grid line electrode layer is arranged above the second electrode layer, the grid line electrode layer is connected with the second notch groove through the second electrode layer, the resistivity of the grid line electrode layer is smaller than that of the second electrode layer, and the third notch groove penetrates through the grid line electrode layer.

By the scheme, the resistivity of the grid electrode layer is smaller than that of the second electrode layer, so that the transmission efficiency of current can be increased by arranging the grid electrode layer, the loss in current transmission is reduced, and the current output efficiency of the thin-film solar cell module can be improved.

In some embodiments, the gate line electrode layer includes a main gate line and a sub gate line. One end of the main grid line is connected with the sub-groove through the second electrode layer. The secondary grid lines are connected with the main grid lines and used for transmitting the collected current to the main grid lines.

Through the scheme, the current can be collected through the main grid line, the current can also be collected through the secondary grid line, and the collected current is transmitted to the main grid line, so that the transmission efficiency of the current is increased. One end of the main grid line is connected with the sub-groove through the second electrode layer, so that the current of the main grid line can be transmitted to the sub-groove through the second electrode layer and then transmitted to the first electrode layer, and interconnection of adjacent sub-batteries is achieved.

In some embodiments, the number of the main grid lines is greater than or equal to the number of the sub-grooves, and each sub-groove is connected with at least one main grid line.

Through the scheme, each sub-groove is connected with at least one main grid line, each main grid line can collect current and transmit the collected current to the adjacent sub-groove, so that the transmission path of the current is effectively reduced, the current loss is reduced, and the transmission efficiency of the current is increased.

In some embodiments, the number of the secondary grid lines is multiple, and multiple secondary grid lines are connected to each main grid line at intervals.

Through the scheme, the transmission medium can be provided for the current of each part, and the probability of current transmission on the second electrode layer is reduced, so that the loss in current transmission is reduced, and the power of the thin-film solar cell module is improved.

In some embodiments, the shape of the sub-groove is at least one of cylindrical and prismatic.

Through the scheme, the flexibility and the diversity of the arrangement of the sub-grooves are improved while the first electrode layer and the second electrode layer are interconnected.

In some embodiments, the first grooves and the third grooves have a pitch in the first direction of 0 μm to 200 μm.

Through the scheme, the distance value is greatly reduced, and the dead zone area between the first notch groove and the third notch groove can be effectively reduced, so that the effective power generation area is increased, and the power generation power of the thin-film solar cell module is improved.

In some embodiments, the plurality of first notches, the plurality of second notches, and the plurality of third notches are uniformly arranged in the first direction.

Through the scheme, the distance between the adjacent first notches along the first direction is the same, the distance between the adjacent second notches along the first direction is the same, and the distance between the adjacent third notches along the first direction is the same. In this way, each of the sub-cells has the same size in the first direction, facilitating formation of sub-cells of the same size.

According to a second aspect of the embodiments of the present application, there is provided a method for manufacturing a thin film solar cell module, the method including the steps of:

providing a substrate, laminating a first electrode layer on the substrate, etching a plurality of first grooves on the first electrode layer at intervals along a first direction, wherein the first grooves penetrate through the first electrode layer along the laminating direction.

And sequentially depositing a first charge transmission layer, a light absorption layer and a second charge transmission layer on the first electrode layer, and filling the first charge transmission layer in the first notch.

And etching a plurality of second grooves which cut off the second charge transmission layer, the light absorption layer and the first charge transmission layer at intervals along the first direction, wherein the second grooves comprise a plurality of sub grooves arranged at intervals along the second direction.

And depositing a second electrode layer on the second charge transport layer, and filling the second electrode layer in the second notch.

And etching third grooves which cut off the second electrode layer, the second charge transmission layer, the light absorption layer and the first charge transmission layer at intervals along the first direction. The third notch groove comprises a plurality of semi-closed areas and connecting parts, the semi-closed areas and the connecting parts are arranged at intervals in the second direction, each connecting part is connected to each of the two sides of each semi-closed area in the second direction, each semi-closed area at least partially surrounds one sub notch groove, and the first notch groove is arranged towards an opening of each semi-closed area.

According to a third aspect of the embodiments of the present application, there is provided an electric device, including the thin film solar cell module of the first aspect, the thin film solar cell module is used for providing electric energy for the electric device.

The foregoing description is only an overview of the technical solutions of the embodiments of the present application, and the embodiments of the present application can be implemented according to the content of the description in order to make the technical means of the embodiments of the present application more clearly understood, and the detailed description of the present application is provided below in order to make the foregoing and other objects, features, and advantages of the embodiments of the present application more clearly understandable.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a thin film solar cell module according to an embodiment of the present disclosure.

Fig. 2 is a schematic structural view of the first groove of fig. 1.

Fig. 3 is a schematic view of the structure of the first groove and the second groove in fig. 1.

Fig. 4 is a schematic structural view of the first, second, and third notches of fig. 1.

Fig. 5 is a schematic structural diagram of another thin film solar cell module provided in this embodiment.

Fig. 6 is a flowchart of a method for manufacturing a thin film solar cell module according to an embodiment of the present disclosure.

Description of reference numerals:

1-subcell, 11-substrate, 12-first electrode layer, 13-first charge transport layer, 14-light absorbing layer, 15-second charge transport layer, 16-second electrode layer, 17-grid electrode layer, 171-main grid line, 172-sub grid line,

p1-first notch, P2-second notch, P21-sub notch, P3-third notch, P31-semi-closed area, P32-connecting part,

x-first direction, Y-stacking direction, Z-second direction.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

The terms "comprising" and "having," and any variations thereof, in the description and claims of this application and the description of the drawings are intended to cover, but not to exclude, other elements. The word "a" or "an" does not exclude a plurality.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase "an embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.

The term "and/or" herein is merely an association describing an associated object, meaning that three relationships may exist, e.g., a and/or B, may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.

The following description is given with the directional terms in the drawings, and is not intended to limit the specific structure of the thin-film solar cell module of the present application. For example, in the description of the present application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are merely for convenience in describing the present application and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present application.

Further, expressions of directions indicated for explaining the operation and configuration of each member of the thin-film solar cell module of the present embodiment, such as the X direction, the Y direction, and the Z direction, are not absolute but relative, and although these indications are appropriate when each member of the battery pack is in the position shown in the drawings, when the positions are changed, the directions should be interpreted differently to correspond to the change.

Furthermore, the terms "first," "second," and the like in the description and claims of the present application or in the above-described drawings are used for distinguishing between different objects and not necessarily for describing a particular sequential order, and may explicitly or implicitly include one or more of the features.

In the description of the present application, unless otherwise specified, "plurality" means two or more (including two), and similarly, "plural groups" means two or more (including two).

In the description of the present application, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., "connected" or "connected" of a mechanical structure may refer to a physical connection, e.g., a physical connection may be a fixed connection, e.g., a fixed connection by a fastener, such as a screw, bolt, or other fastener; the physical connection can also be a detachable connection, such as a mutual snap-fit or snap-fit connection; the physical connection may also be an integral connection, for example, a connection made by welding, gluing or integrally forming the connection. "connected" or "connected" of circuit structures may mean not only physically connected but also electrically connected or signal-connected, for example, directly connected, i.e., physically connected, or indirectly connected through at least one intervening component, as long as the circuits are in communication, or communication between the interiors of two components; signal connection may refer to signal connection through a medium, such as radio waves, in addition to signal connection through circuitry. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.

In recent years, novel thin-film solar cells represented by perovskite and organic thin-film solar cells have been subversively developed, and the thin-film solar cells are the most potential substitutes for silicon-based solar cells due to the advantages of high efficiency, low cost, simple process and the like.

For large-area thin-film solar cell modules, scribing is often performed by laser or mechanical scribing to achieve cell division and interconnection in order to obtain appropriate voltage and current output. The process flow is as follows: and depositing a bottom electrode on the substrate, and carrying out first scribing by using a laser or mechanical scribing mode to finish the division of the subcells. And then, depositing a functional thin film layer, and carrying out second scribing in a laser or mechanical scribing mode to finish scribing of the series channels of the sub-cells. And finally, depositing a top electrode film layer, and carrying out third scribing in a laser or mechanical scribing mode to finish the segmentation of the front electrode.

The inventors have found that the three scribe lines of the related art are parallel to each other, and a large ineffective power generation region, generally referred to as a dead region, is formed between the first scribe line and the third scribe line. Photocurrent cannot be generated in the region, so that the effective power generation area on the thin-film solar cell module is reduced, and the power output efficiency of the thin-film solar cell module is finally influenced.

Based on this, the embodiment of the application provides a thin film solar cell module, can reduce the distance between first notch and the third notch through the special design of second notch and third notch, effectively reduces the dead zone area between first notch and the third notch to increase effective power generation area, improve thin film solar cell module's power.

The thin film solar cell module provided by the embodiment of the present application is described in detail below with reference to the accompanying drawings. Fig. 1 is a schematic structural view of a thin film solar cell module according to an embodiment of the present disclosure, fig. 2 is a schematic structural view of a first groove P1 in fig. 1, fig. 3 is a schematic structural view of a first groove P1 and a second groove P2 in fig. 1, and fig. 4 is a schematic structural view of a first groove P1, a second groove P2 and a third groove P3 in fig. 1. As shown in fig. 1 to 4, the present embodiment provides a thin film solar cell module including a plurality of sub-cells 1. The sub-cell 1 includes a substrate 11, a first electrode layer 12, a first charge transport layer 13, a light absorbing layer 14, a second charge transport layer 15, and a second electrode layer 16, which are sequentially stacked. The thin film solar cell module is provided with a plurality of first grooves P1, a plurality of second grooves P2 and a plurality of third grooves P3 at intervals along the first direction X.

The first groove P1 penetrates through the first electrode layer 12 along the stacking direction Y, and the first charge transport layer 13 fills the first groove P1. The second grooves P2 penetrate the second charge transport layer 15, the light absorbing layer 14, and the first charge transport layer 13 in the stacking direction Y, and the second grooves P2 are filled with the second electrode layer 16. The second engraved groove P2 includes a plurality of sub engraved grooves P21 arranged at intervals in a second direction Z, the first direction X, the stacking direction Y, and the second direction Z being perpendicular to each other. The third groove P3 penetrates through the second electrode layer 16, the second charge transport layer 15, the light absorbing layer 14 and the first charge transport layer 13 along the stacking direction Y, the third groove P3 includes a plurality of semi-closed regions P31 and connecting portions P32 arranged at intervals along the second direction Z, one connecting portion P32 is connected to each of the semi-closed regions P31 along both sides of the second direction Z, each of the semi-closed regions P31 at least partially surrounds one of the sub-grooves P21, and the first groove P1 is arranged toward an opening of the semi-closed region P31.

The base 11 is also called a base plate or a substrate. The substrate 11 may be made of glass, tempered glass, quartz, carbon, silicon, organic flexible material, or the like. The substrate 11 may also be transparent conductive glass, a stainless steel conductive flexible substrate, a polyethylene terephthalate (PET) conductive flexible substrate, or the like.

The first electrode layer 12 is also referred to as a bottom electrode layer, a top electrode, a conductive layer, a transparent conductive oxide layer, a metal back reflection layer, etc. The material of the first electrode layer 12 may be Transparent Conductive Oxide (TCO), indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), or the like.

The first charge transport layer 13, the light absorbing layer 14 and the second charge transport layer 15 are functional layers of the sub-cell 1, wherein the first charge transport layer 13 and the second charge transport layer 15 are carrier transport layers. The first charge transport layer 13 is also referred to as a front charge transport layer or the like. The second charge transport layer 15 is also called a post-charge transport layer or the like. If the cell is a trans-architecture, the first charge transport layer 13 is a hole transport layer and the second charge transport layer 15 is an electron transport layer, in which case the first charge transport layer 13 comprises any organic or inorganic material that can be used as a hole transport layer and the second charge transport layer 15 comprises any organic or inorganic material that can be used as an electron transport layer. If the cell is a formal architecture, the first charge transport layer 13 is an electron transport layer and the second charge transport layer 15 is a hole transport layer, in which case the first charge transport layer 13 comprises any organic or inorganic material that can be used as an electron transport layer and the second charge transport layer 15 comprises any organic or inorganic material that can be used as a hole transport layer. Regardless of whether the battery is a trans-structural system or a formal structural system, the material of the electron transport layer may be zinc oxide, titanium oxide, tin oxide, carbon 60 (i.e., C60), a fullerene derivative (i.e., PCBM), and the like, and the material of the hole transport layer may be nickel oxide, Poly [ bis (4-phenyl) (2,4,6-trimethylphenyl) amine ] (Poly [ bis (4-phenyl) (2,4, 6-trimethyphenyl) amine ], PTAA), a polymer of 3-hexylthiophene (abbreviation, P3 HT), 2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (abbreviation, spiro-ome tad), and the like.

The light absorbing layer 14 is also called a photosensitive layer. If the material of the light absorbing layer 14 is perovskite, the light absorbing layer 14 may be called a perovskite layer, a perovskite light absorbing layer, or the like, and the thin-film solar cell module formed is called a perovskite solar cell module. Wherein the perovskite layer can be methylamine lead iodide, formamidine lead iodide, cesium lead iodide and the like. Similarly, if the material of the light absorption layer 14 is cigs, the resulting thin-film solar cell module is referred to as a cigs solar cell module. If the material of the light absorbing layer 14 is cadmium telluride, the resulting thin film solar cell module is referred to as a cadmium telluride solar cell module.

The second electrode layer 16 is also referred to as a top electrode layer, a back electrode layer, a metal electrode layer, a transparent conductive front electrode, and the like. The material of the second electrode layer 16 is mainly a conductive oxide material, for example, ITO, AZO, BZO, IZO, or the like. It should be noted that at least one of the first electrode layer 12 and the second electrode layer 16 may be a transparent conductive layer to ensure the light transmittance of the thin film solar cell module.

The first notch P1 is a scribe line that cuts through the first electrode layer 12 in the stacking direction Y, the second notch P2 is a scribe line that cuts through the second charge transport layer 15, the light absorbing layer 14, and the first charge transport layer 13 in the stacking direction Y, and the third notch P3 is a scribe line that cuts through the second electrode layer 16, the second charge transport layer 15, the light absorbing layer 14, and the first charge transport layer 13 in the stacking direction Y. It should be noted here that the substrate 11, the first electrode layer 12, the first charge transport layer 13, the light absorbing layer 14, the second charge transport layer 15, and the second electrode layer 16 are stacked from bottom to top, and the first notch P1, the second notch P2, and the third notch P3 are all etched and scribed from top to bottom, so that the stacking direction Y in the embodiment of the present application refers to a direction from top to bottom as shown in fig. 1.

The first notch P1, the second notch P2 and the third notch P3 can be processed by laser scribing or mechanical scribing. The number of the first engraved grooves P1, the second engraved grooves P2, and the third engraved grooves P3 is plural, and the plural first engraved grooves P1, the plural second engraved grooves P2, and the plural third engraved grooves P3 are respectively arranged at intervals in the first direction X, so that the thin-film solar cell module is divided into the plural sub-cells 1 in the first direction X. The first direction X may be a longitudinal direction or a width direction of the thin film solar cell module. Specifically, the first engraved grooves P1 are used to divide the first electrode layer 12 to form a plurality of sub-cells 1, and the first engraved grooves P1 are filled with the first charge transport layer 13, so that the first charge transport layer 13 is connected to the substrate 11 through the first engraved grooves P1. The second engraved groove P2 is filled with the second electrode layer 16, and the second engraved groove P2 connects the second electrode layer 16 of the adjacent previous sub-cell 1 with the first electrode layer 12 of the subsequent sub-cell 1, so as to realize interconnection between the front and rear adjacent sub-cells 1. The third engraved groove P3 cuts the second electrode layer 16 of the adjacent sub-cell 1 to form the complete sub-cell 1 structure.

The first notch P1 may be a square groove, a trapezoidal groove, a circular groove, etc. parallel to the second direction Z, which is not limited in the embodiment of the present application. As shown in fig. 3, unlike the first notches P1, the second notches P2 are not continuous in the second direction Z, but are composed of a plurality of sub notches P21 arranged at intervals, and the plurality of sub notches P21 may be equally and uniformly distributed along the second direction Z. As shown in fig. 4, the third notch P3 includes a plurality of semi-closed regions P31 and a connecting portion P32, which are spaced apart from the first notch P1 and the second notch P2, the number of the semi-closed regions P31 may be the same as that of the sub-notches P21, and the plurality of semi-closed regions P31 may correspond to the plurality of sub-notches P21 one to one. The semi-closed regions P31 have openings, each semi-closed region P31 may at least partially surround a corresponding sub-notch P21, two sides of the opening of the semi-closed region P31 along the second direction Z may be respectively connected with a connection portion P32, the semi-closed region P31 may be square, circular arc, trapezoid, or the like, and the connection portion P32 may be a square groove, a trapezoid groove, a circular groove, or the like parallel to the second direction Z or the first notch P1. The third notch P3 shown in fig. 4 is saw-toothed. Wherein, when the first direction X is a length direction of the thin film solar cell module, the second direction Z is a width direction of the thin film solar cell module; when the first direction X is a width direction of the thin film solar cell module, the second direction Z is a length direction of the thin film solar cell module.

The working principle of the thin-film solar cell module provided by the embodiment of the application is as follows: based on the photoelectric effect, sunlight is incident to the light absorption layer 14 from the first electrode layer 12 and/or the second electrode layer 16, the light absorption layer 14 is excited after absorbing the sunlight to generate electron-hole pairs, the electron transport layer in the first electrode layer 12 and the second electrode layer 16 extracts electrons and transports the electrons to the first electrode layer 12, and the hole transport layer transports the holes to the second electrode layer 16. When the thin film solar cell is connected to a load, electrons are transported to the second electrode layer 16 through the load and recombine with holes. If sunlight continuously enters, the thin film solar cell module can provide continuous and stable current for the load to drive the load to work. The sunlight is incident on the light absorbing layer 14 from the first electrode layer 12 or the second electrode layer 16, depending on the light transmittance of the materials of the first electrode layer 12 and the second electrode layer 16. Assuming that both the first electrode layer 12 and the second electrode layer 16 are made of a transparent material, sunlight may be incident from the first electrode layer 12 and the second electrode layer 16 to the light absorbing layer 14. If only the first electrode layer 12 is made of a transparent material, sunlight is incident on the light absorbing layer 14 only from the first electrode layer 12.

In the embodiment of the present application, the second notch P2 is a plurality of sub notches P21 arranged at intervals along the second direction Z, the semi-closed region P31 of the third notch P3 at least partially surrounds one sub notch P21, and the first notch P1 is arranged toward the opening of the semi-closed region P31, so that the distance between the first notch P1 and the third notch P3 can be reduced, the dead zone area between the first notch P1 and the third notch P3 is effectively reduced, the effective power generation area is increased, the current loss of the thin film solar cell module due to the dead zone area is reduced, and the output efficiency of the whole thin film solar cell module is improved.

In some embodiments, as shown in fig. 4, a projection of the connecting portion P32 in the stacking direction Y at least partially falls into the first notch P1.

The connection part P32 is connected to both sides of the opening of the semi-closed region P31 in the second direction Z, and the connection part P32 may be parallel to the first notch P1. In order to further reduce the distance between the first notch P1 and the third notch P3, the connection portion P32 may be disposed as close to the first notch P1 as possible. For example, the projection of the connecting portion P32 in the stacking direction Y may fall at least partially into the first notch P1. In fig. 4, the projection of the connecting portion P32 in the stacking direction Y overlaps the first notch P1.

In this embodiment, at least a part of the projection of the connecting portion P32 in the stacking direction Y falls into the first notch P1, so that the distance between the connecting portion P32 and the first notch P1 can be reduced, that is, the distance between the third notch P3 and the first notch P1 is reduced, thereby effectively reducing the dead area between the first notch P1 and the third notch P3, increasing the effective power generation area, and improving the power of the thin-film solar cell module.

In some embodiments, the first engraved groove P1 and the third engraved groove P3 have a pitch of 0 μm to 200 μm in the first direction X.

Based on the previous embodiment, the third engraved groove P3 includes a plurality of semi-closed regions P31 and connecting portions P32 arranged at intervals in the second direction Z, the semi-closed region P31 at least partially surrounds the sub-engraved groove P21, and one connecting portion P32 is connected to each semi-closed region P31 on both sides in the second direction Z, and it can be seen that distances between different portions of the third engraved groove P3 and the first engraved groove P1 are different.

As shown in fig. 4, the third notch P3 has the smallest distance between the connecting portion P32 and the first notch P1, and the semi-closed region P31 has the larger distance between the first notch P1. When the projection of the connection part P32 in the stacking direction Y at least partially falls into the first notch P1, the distance between the first notch P1 and the third notch P3 in the first direction X is the smallest, and the smallest distance may be equal to zero. The semi-closed region P31 has a maximum distance from the first notch P1 in the first direction X, which may be 200 μm.

In this embodiment, the distance between the first notch P1 and the third notch P3 in the first direction X is 0 μm to 200 μm, which greatly reduces the value of the distance and can effectively reduce the dead area between the first notch P1 and the third notch P3, thereby increasing the effective power generation area and increasing the power generation power of the thin film solar cell module, compared with the distance between the first notch P1 and the third notch P3 in the related art, which is 300 μm to 500 μm in the first direction X.

In some embodiments, when the second electrode layer 16 is a transparent conductive layer, the resistivity of the second electrode layer 16 is relatively high, the collected current is relatively high in loss during transmission, and in order to improve the conductivity of the thin film solar cell module, as shown in fig. 1 and 5, the thin film solar cell module may further include a gate line electrode layer 17. The gate line electrode layer 17 is disposed above the second electrode layer 16, the gate line electrode layer 17 is connected to the second notch P2 through the second electrode layer 16, the resistivity of the gate line electrode layer 17 is smaller than that of the second electrode layer 16, and the third notch P3 further penetrates through the gate line electrode layer 17.

The resistivity of the gate electrode layer 17 is smaller than that of the second electrode layer 16, and the provision of the gate electrode layer 17 on the second electrode layer 16 can increase the current transfer efficiency. The gate line electrode layer 17 may partially cover the second electrode layer 16, instead of completely covering the second electrode layer 16, so that sufficient light transmittance of the second electrode layer 16 can be ensured while increasing the current transfer efficiency.

The grid line electrode layer 17 is disposed above the second electrode layer 16, and a third groove P3 may be scribed after the grid line electrode layer 17 is laid, so that the third groove P3 penetrates through the grid line electrode layer 17, the second electrode layer 16, the second charge transport layer 15, the light absorption layer 14, and the first charge transport layer 13 along the stacking direction Y, thereby dividing the thin film solar cell module into a plurality of sub cells 1 along the first direction X.

The second groove P2 is filled with the second electrode layer 16, the gate line electrode layer 17 can be connected to the second groove P2 through the second electrode layer 16, and the current collected by the gate line electrode can flow to the first electrode layer 12 through the second electrode layer 16 and the second groove P2.

In this embodiment, the gate line electrode layer 17 is disposed above the second electrode layer 16, and since the resistivity of the gate line electrode layer 17 is smaller than that of the second electrode layer 16, the arrangement of the gate line electrode layer 17 can increase the current transmission efficiency, reduce the loss during current transmission, and thus can improve the current output efficiency of the thin-film solar cell module.

In some embodiments, as shown in fig. 5, the gate line electrode layer 17 may include a main gate line 171 and a sub gate line 172. One end of the main gate line 171 is connected to the sub-groove P21 through the second electrode layer 16. The sub-gate line 172 is connected to the main gate line 171, and the sub-gate line 172 serves to transmit the collected current to the main gate line 171.

The main gate lines 171 and the sub-gate lines 172 are made of a metal material, for example, the material of the main gate lines 171 and the sub-gate lines 172 includes, but is not limited to, any one of gold, silver, copper, aluminum, nickel, zinc, tin, iron, and the like, and a combination or an alloy thereof.

The main gate line 171 and the sub gate line 172 may be integrally formed by using technologies such as screen printing, vacuum sputtering, vacuum evaporation, and the like, and the industrial manufacturing technology thereof is diversified. The thickness of the main gate lines 171 and the sub gate lines 172 may be 20nm to 200 nm. The width of the main gate line 171 may be 20 μm to 100 μm, and the width of the sub-gate line 172 may be 10 μm to 20 μm.

The bus bars 171 may be disposed parallel to the first direction X, or may have a non-zero angle with the first direction X, for example, the angle may be 60 °, 85 °, 90 °, and the like. The sub-gate line 172 is connected to the main gate line 171, and an end portion of the sub-gate line 172 may be connected to the main gate line 171, or a portion of the sub-gate line 172 other than the end portion may be connected to the main gate line 171. The minor gate lines 172 and the major gate lines 171 may have any included angle therebetween, for example, the included angle may be 50 °, 75 °, 90 °, and the like.

In this embodiment, the sub-gate lines 172 are connected to the main gate lines 171, and not only can the current be collected by the main gate lines 171, but also the current can be collected by the sub-gate lines 172 and transmitted to the main gate lines 171, so as to increase the transmission efficiency of the current. One end of the main gate line 171 is connected to the sub-groove P21 through the second electrode layer 16, so that the current of the main gate line 171 can be transmitted to the sub-groove P21 through the second electrode layer 16, and then transmitted to the first electrode layer 12, thereby realizing interconnection of the adjacent sub-cells 1.

In some embodiments, the number of the main gate lines 171 may be greater than or equal to the number of the sub-grooves P21, and at least one main gate line 171 is connected to each sub-groove P21.

Each sub-groove P21 may be connected to at least one main gate line 171 through the second electrode layer 16. The number of the main gate lines 171 connected by different sub-grooves P21 may be the same, and certainly, may be different. For example, if a certain second engraved groove P2 includes 4 sub engraved grooves P21 along the second direction Z, 1 main gate line 171 may be connected to the 1 st sub engraved groove P21, 2 main gate lines 171 may be connected to the 2 nd and 3 rd sub engraved grooves P21, respectively, and 4 main gate lines 171 may be connected to the 4 th sub engraved groove P21. This example does not constitute a limitation on the present solution.

In the case of satisfying the light transmission requirement of the second electrode layer 16, the greater the number of the main gate lines 171 connected to each sub-groove P21, the higher the current transmission efficiency. After the main gate line 171 collects the current, the current can be transmitted to the adjacent sub-groove P21 through the second electrode layer 16, so that the transmission path of the current is reduced, and the transmission efficiency of the current is increased.

In this embodiment, each sub-groove P21 is connected to at least one main gate line 171, and each main gate line 171 can collect current and transmit the collected current to the adjacent sub-groove P21, thereby effectively reducing the transmission path of current, reducing current loss, and increasing the transmission efficiency of current.

In some embodiments, as shown in fig. 5, the number of the sub-gate lines 172 may be multiple, and multiple sub-gate lines 172 are connected to each main gate line 171 at intervals.

The distances between the plurality of sub-gate lines 172 connected to each main gate line 171 may be the same or different, and this embodiment of the present invention does not limit this.

Each part on the second electrode layer 16 may generate current, and the plurality of sub-gate lines 172 are connected to the main gate line 171 at intervals, so that a transmission medium can be provided for the current of each part, the probability of current transmission on the second electrode layer 16 is reduced, the loss during current transmission is reduced, and the power of the thin-film solar cell module is improved.

In some embodiments, the shape of the sub-engraved groove P21 may be at least one of a cylindrical shape and a prismatic shape.

The plurality of sub-engraved grooves P21 may be independently spaced cylindrical grooves, prismatic grooves, or the like. For a certain second notch P2, the shape of the plurality of sub notches P21 included in the second notch P2 along the second direction Z may be the same or different, and this is not limited in this embodiment of the application.

The interconnection region of the plurality of spaced sub-engraved grooves P21 can be obtained by reducing the repetition frequency of laser pulses and improving the process etching speed, so that the process production tact is improved.

In this embodiment, the shape of the sub-groove P21 is not limited to a specific shape, and the flexibility and diversity of arrangement of the sub-groove P21 are improved while the interconnection of the first electrode layer 12 and the second electrode layer 16 is ensured.

In some embodiments, as shown in fig. 1 to 5, the plurality of first notches P1, the plurality of second notches P2, and the plurality of third notches P3 are uniformly arranged in the first direction X.

On the basis of the foregoing embodiment, the plurality of first notches P1, the plurality of second notches P2, and the plurality of third notches P3 may be disposed at intervals not only in the first direction X, but also in the first direction X.

In other words, the pitches of the adjacent first engraved grooves P1 in the first direction X are the same, the pitches of the adjacent second engraved grooves P2 in the first direction X are the same, and the pitches of the adjacent third engraved grooves P3 in the first direction X are the same. In this way, the size of each sub-cell 1 in the first direction X is the same, facilitating formation of sub-cells 1 of the same size.

Further, in some embodiments, as shown in fig. 1 to 5, the plurality of first notches P1, the plurality of second notches P2 and the plurality of third notches P3 may be parallel to the second direction Z, so that the regular sub-cells 1 are formed, and the probability of the abnormal shape of the sub-cells 1 is reduced.

In some embodiments, the sub-battery 1 may further include an encapsulating material layer and a cover glass.

The cover plate glass is arranged above the packaging material layer. When the thin film solar cell module does not have the grid line electrode layer 17, the packaging material layer can be arranged above the second electrode layer 16; when the thin film solar cell module is further provided with the gate line electrode layer 17, the packaging material layer may be disposed above the gate line electrode layer 17.

No matter the packaging material layer is disposed above the second electrode layer 16 or above the gate line electrode layer 17, the packaging material covers the third trench P3. The packaging material layer can hermetically connect the sub-battery 1 with the cover plate glass, and can sufficiently support the sub-battery 1, block the entrance of external water vapor and air, prevent the sub-battery 1 from being oxidized and hydrolyzed, and increase the operation reliability and the mechanical performance of the sub-battery 1.

According to some embodiments of the present application, as shown in fig. 6, embodiments of the present application further provide a method for manufacturing a thin film solar cell module, the method including the steps of:

s1: providing a substrate 11, laminating a first electrode layer 12 on the substrate 11, etching a plurality of first grooves P1 on the first electrode layer 12 at intervals along a first direction X, wherein the first grooves P1 penetrate through the first electrode layer 12 along a laminating direction Y.

The preparation method of the first electrode layer 12 may be evaporation or magnetron sputtering or CVD (chemical vapor deposition) or ALD (monoatomic layer deposition).

When the first engraved groove P1 is etched on the first electrode layer 12, a line may be scribed every 6-10mm from one side of the first electrode layer 12, and the scribing width may be 10-80 μm, so that a first engraved groove P1 having a width of 10-80 μm may be formed every 6-10mm on the first electrode layer 12.

S2: a first charge transport layer 13, a light absorption layer 14, and a second charge transport layer 15 are sequentially deposited on the first electrode layer 12, and the first charge transport layer 13 is filled in the first notch P1.

The first charge transport layer 13 and the second charge transport layer 15 may be prepared by vacuum sputtering, reactive plasma sputtering, vacuum thermal evaporation, wet coating, or the like. The preparation method of the light absorbing layer 14 may be wet coating.

S3: a plurality of second grooves P2 cutting off the second charge transport layer 15, the light absorbing layer 14, and the first charge transport layer 13 are etched at intervals in the first direction X, and the second grooves P2 include a plurality of sub-grooves P21 arranged at intervals in the second direction Z.

Wherein the first direction X, the stacking direction Y, and the second direction Z are perpendicular to each other.

The second engraved groove P2 is an interconnection region of the second electrode layer 16 of the previous sub-cell 1 and the first electrode layer 12 of the subsequent sub-cell 1. In etching the second engraved grooves P2, sub-engraved grooves P21 may be etched every 1mm to 20mm from one side of the second charge transport layer 15, the light absorbing layer 14, and the first charge transport layer 13 in the second direction Z, and each sub-engraved groove P21 may be spaced apart from the first engraved grooves P1 by 10 to 80 μm in the first direction X. That is, the distance between adjacent sub-grooves P21 along the second direction Z may be 1mm to 20mm, and the distance between the second groove P2 and the first groove P1 along the first direction X may be 10 μm to 80 μm.

The second score groove P2 can be formed by laser scoring or mechanical scoring.

S4: a second electrode layer 16 is deposited on the second charge transport layer 15, and the second electrode layer 16 is filled in the second trench P2.

The second electrode layer 16 can be formed by vacuum sputtering, reactive plasma sputtering, atomic layer deposition, or the like.

S5: third etching grooves P3 that cut off the second electrode layer 16, the second charge transport layer 15, the light absorbing layer 14, and the first charge transport layer 13 are etched at intervals in the first direction X.

The third notch P3 includes a plurality of semi-closed regions P31 and connecting portions P32 arranged at intervals in the second direction Z, each semi-closed region P31 is connected with one connecting portion P32 on both sides in the second direction Z, each semi-closed region P31 at least partially surrounds one sub notch P21, and the first notch P1 is arranged toward an opening of the semi-closed region P31.

The third grooves P3 are to divide the sub-battery 1 immediately around the second grooves P2, the groove width of the third grooves P3 may be 30 μm to 100 μm, the distance between the third grooves P3 and the first grooves P1 in the first direction X may be 0 μm to 200 μm, and the distance between the semi-closed region P31 in the third grooves P3 and the first grooves P1 is relatively greater than the distance between the connecting portion P32 and the first grooves P1.

In some embodiments, after the step of S4, the gate line electrode layer 17 may be further disposed above the second electrode layer 16, and then the step of S5 may be changed to etch the third trenches P3 cutting off the gate line electrode layer 17, the second electrode layer 16, the second charge transport layer 15, the light absorbing layer 14, and the first charge transport layer 13 at intervals in the first direction X.

The gate line electrode layer 17 may be prepared by screen printing, vacuum sputtering, vacuum evaporation, or other techniques.

After the third etching groove P3 is etched, edge cleaning, testing, laminating and packaging can be performed to obtain the thin film solar cell module.

According to some embodiments of the present application, there is also provided an electric device, including the thin film solar cell module of the previous embodiments, and the thin film solar cell module is used for supplying electric energy to the electric device.

The power consumption device can be wearable equipment such as solar energy knapsack, cap, helmet, clothing, can also be spacecraft, near-ground aircraft, field operations photovoltaic power plant etc. the thin-film solar cell module that this application embodiment provided can also be applied to building roof, outer wall, tent etc. its shape strong adaptability, installation lay portably, can make printing opacity and partial printing opacity as required, both can realize photoelectric conversion, can play good thermal-insulated effect again.

According to some embodiments of the present application, as shown in fig. 1 to 5, embodiments of the present application further provide a thin film solar cell module including a plurality of first trenches P1, second trenches P2, and third trenches P3 arranged at equal intervals along the first direction X. The thin film solar cell module is divided into a plurality of sub-cells 1 with the same width which are sequentially connected in series end to end by the first notch P1, the second notch P2 and the third notch P3. Each sub-cell 1 comprises a substrate 11, a first electrode layer 12, a first charge transport layer 13, a light absorption layer 14, a second charge transport layer 15, a second electrode layer 16 and a grid electrode layer 17 from bottom to top in sequence. The width of each sub-cell 1 may be 6-10mm, wherein the width of the sub-cell 1 is the dimension of the sub-cell 1 in the first direction X.

The first groove P1 penetrates the first electrode layer 12 in the stacking direction Y, and the first groove P1 is filled with the first charge transport layer 13. The second groove P2 penetrates the second charge transport layer 15, the light absorbing layer 14, and the first charge transport layer 13 in the stacking direction Y, and the second groove P2 is filled with the second electrode layer 16; the second notch P2 includes a plurality of sub notches P21 arranged at intervals in the second direction Z. The third notch P3 penetrates through the gate line electrode layer 17, the second electrode layer 16, the second charge transport layer 15, the light absorption layer 14 and the first charge transport layer 13 along the stacking direction Y, the third notch P3 includes a plurality of semi-closed regions P31 and connection portions P32 which are arranged at intervals along the second direction Z, two sides of each semi-closed region P31 along the second direction Z are connected with one connection portion P32, each semi-closed region P31 at least partially surrounds one sub-notch P21, and the first notch P1 is arranged towards an opening of the semi-closed region P31.

Those skilled in the art will appreciate that although some embodiments herein include some features included in other embodiments, not others, combinations of features of different embodiments are meant to be within the scope of the application and form different embodiments. For example, in the claims, any of the claimed embodiments may be used in any combination.

The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.

Claims

1. A thin film solar cell assembly comprises a plurality of sub-cells, and is characterized in that the sub-cells comprise a substrate, a first electrode layer, a first charge transmission layer, a light absorption layer, a second charge transmission layer, a second electrode layer and a grid line electrode layer which are sequentially stacked; the thin film solar cell module is provided with a plurality of first notches, a plurality of second notches and a plurality of third notches at intervals along a first direction, and the thin film solar cell module is divided into a plurality of sub cells which are sequentially connected in series by the plurality of first notches, the plurality of second notches and the plurality of third notches;

the first notch penetrates through the first electrode layer along the stacking direction, and the first notch is filled with the first charge transport layer;

the second notch penetrates through the second charge transport layer, the light absorption layer and the first charge transport layer along the stacking direction, and the second notch is filled with the second electrode layer; the second notch groove comprises a plurality of sub notch grooves arranged at intervals along a second direction, and the first direction, the stacking direction and the second direction are mutually vertical;

the third groove penetrates through the second electrode layer, the second charge transmission layer, the light absorption layer and the first charge transmission layer along the stacking direction, the third groove comprises a plurality of semi-closed areas and connecting parts which are arranged at intervals along the second direction, two sides of each semi-closed area along the second direction are connected with one connecting part, each semi-closed area at least partially surrounds one sub-groove, and the first groove is arranged towards an opening of the semi-closed area;

the grid line electrode layer is arranged above the second electrode layer, the grid line electrode layer is connected with the second notch groove through the second electrode layer, and the resistivity of the grid line electrode layer is smaller than that of the second electrode layer; the third groove also penetrates through the grid line electrode layer.

2. The thin-film solar cell module as claimed in claim 1, wherein a projection of the connecting portion in the stacking direction at least partially falls into the first notch groove.

3. The thin film solar cell module as claimed in claim 1, wherein the gate line electrode layer comprises:

one end of the main grid line is connected with the sub-etching groove through the second electrode layer;

and a sub-gate line connected to the main gate line, the sub-gate line being used to transmit the collected current to the main gate line.

4. The thin film solar cell module as claimed in claim 3, wherein the number of the main grid lines is greater than or equal to the number of the sub-grooves, and at least one main grid line is connected to each sub-groove.

5. The thin film solar cell module as claimed in claim 3 or 4, wherein the number of the sub-grid lines is plural, and a plurality of the sub-grid lines are connected to each of the main grid lines at intervals.

6. The thin film solar cell module as claimed in any one of claims 1 to 4, wherein the sub-grooves have a shape of at least one of a cylindrical shape and a prismatic shape.

7. The thin film solar cell module as claimed in any of claims 1 to 4, wherein the first groove and the third groove have a pitch in the first direction of 0 μm to 200 μm.

8. The thin film solar cell module as claimed in any of claims 1 to 4, wherein a plurality of the first grooves, a plurality of the second grooves and a plurality of the third grooves are uniformly arranged in the first direction.

9. A method for manufacturing a thin film solar cell module is characterized by comprising the following steps:

providing a substrate, stacking a first electrode layer on the substrate, and etching a plurality of first grooves on the first electrode layer at intervals along a first direction, wherein the first grooves penetrate through the first electrode layer along the stacking direction;

sequentially depositing a first charge transmission layer, a light absorption layer and a second charge transmission layer on the first electrode layer, and filling the first charge transmission layer in the first groove;

a plurality of second grooves which cut off the second charge transport layer, the light absorption layer, and the first charge transport layer are etched at intervals in the first direction, the second grooves include a plurality of sub-grooves arranged at intervals in a second direction, and the first direction, the stacking direction, and the second direction are perpendicular to each other;

depositing a second electrode layer on the second charge transport layer, and filling the second electrode layer in the second groove;

arranging a grid line electrode layer on the second electrode layer, wherein the grid line electrode layer is connected with the second notch groove through the second electrode layer, and the resistivity of the grid line electrode layer is smaller than that of the second electrode layer;

the thin-film solar cell module is characterized by comprising a grid line electrode layer, a second charge transmission layer, a light absorption layer and a first charge transmission layer, wherein the grid line electrode layer, the second charge transmission layer, the light absorption layer and the first charge transmission layer are cut off by etching at intervals in the first direction, the third etching groove comprises a plurality of semi-closed areas and connecting parts, the semi-closed areas are arranged at intervals in the second direction, each connecting part is connected to each of two sides of each semi-closed area in the second direction, at least part of each semi-closed area surrounds one sub-etching groove, the first etching grooves face the openings of the semi-closed areas, and the thin-film solar cell module is divided into a plurality of sub-cells which are connected in series in sequence by the plurality of first etching grooves, the plurality of second etching grooves and the third etching grooves.

10. An electric device comprising the thin film solar cell module according to any one of claims 1 to 8, which is used for supplying electric power.