CN114156374B - Chip transfer device and chip transfer method - Google Patents
Chip transfer device and chip transfer method Download PDFInfo
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- CN114156374B CN114156374B CN202111437615.7A CN202111437615A CN114156374B CN 114156374 B CN114156374 B CN 114156374B CN 202111437615 A CN202111437615 A CN 202111437615A CN 114156374 B CN114156374 B CN 114156374B
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000001257 hydrogen Substances 0.000 claims description 53
- 229910052739 hydrogen Inorganic materials 0.000 claims description 53
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 47
- 239000007789 gas Substances 0.000 claims description 32
- 239000003292 glue Substances 0.000 claims description 20
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920000297 Rayon Polymers 0.000 claims 2
- 239000012790 adhesive layer Substances 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 25
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 229920000715 Mucilage Polymers 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Led Device Packages (AREA)
Abstract
The application provides a chip transfer device and chip transfer method, this chip transfer device includes base plate, magnetic part and the sacrifice piece of range upon range of setting in proper order, wherein: the magnetic piece can generate suction force to the LED chip so that the LED chip is adsorbed on the sacrificial piece, and the sacrificial piece can generate gas and enable the gas to impact the LED chip so that the LED chip is separated from the sacrificial piece. The chip transfer device can effectively improve the transfer yield of the LED chips.
Description
Technical Field
The invention relates to the technical field of display, in particular to a chip transfer device and a chip transfer method.
Background
In the prior art, when manufacturing a light emitting diode (LightEmittingDiode, LED) display panel, it is necessary to transfer LED chips with different light emission colors onto a carrier substrate in a specific arrangement manner by a transfer method, so as to form a pixel array. For the transfer of light emitting diodes, the laser ablation method has the obvious advantage: the transfer speed is high, the flexibility is high, and the transfer speed can be quickly adjusted to be suitable for devices with different sizes.
In the use process of the laser ablation method, laser mucilage glue is generally needed, but the dosage of the laser mucilage glue is not well controlled. When the laser sticky glue is thicker, the chip is trapped in the glue, and the situation that the chip cannot fall off and separate exists; when the laser-induced adhesive is thinner, the bonding process is complex, the difficulty is high, and the conditions of insufficient adhesion and the like exist.
Disclosure of Invention
The embodiment of the application provides a chip transfer device and a chip transfer method, which effectively improve the transfer yield of LED chips.
The embodiment of the application provides a chip transfer device, including base plate, magnetic part and the sacrifice piece of range upon range of setting in proper order, wherein:
the magnetic piece can generate suction force on the LED chip so that the LED chip is adsorbed on the sacrificial piece, and the sacrificial piece can generate gas and enable the gas to impact the LED chip so that the LED chip is separated from the sacrificial piece.
In some embodiments, the sacrificial member is a hydrogen-rich film capable of generating hydrogen under the influence of a first laser.
In some embodiments, the hydrogen-rich film has a thickness greater than 10nm and less than 50nm.
In some embodiments, the hydrogen-rich film has a content of elemental hydrogen greater than 5% and less than 20%.
In some embodiments, the magnetic member has a thickness of less than 10 μm.
The embodiment of the application also provides a chip transfer method, which is applied to the chip transfer device and comprises the following steps:
controlling the magnetic piece to generate suction force on the LED chip so as to enable the LED chip to be adsorbed on the sacrificial piece;
and controlling the sacrificial member to generate gas, and enabling the gas to impact the chip so as to enable the chip to fall off the sacrificial member.
In some embodiments, the sacrificial member is a hydrogen-rich film capable of generating hydrogen, the controlling the sacrificial member to generate gas, the chip transfer method comprising: the sacrificial member is irradiated with a first laser so that the sacrificial member generates hydrogen.
In some embodiments, before the controlling the magnetic member to generate the attraction force to the LED chip, the method further includes:
providing a donor substrate, wherein an LED chip is arranged on the donor substrate;
irradiating the donor substrate with a second laser so that the LED chip is detached from the donor substrate.
In some embodiments, the wavelength of the second laser is 308nm.
In some embodiments, the controlling the sacrificial member to generate a gas and causing the gas to impinge on the chip to detach the chip from the sacrificial member further comprises providing a receiving substrate to carry the detached LED chip.
The chip transfer device provided by the embodiment of the application comprises a substrate, a magnetic piece and a sacrificial piece, wherein the substrate, the magnetic piece and the sacrificial piece are sequentially stacked, when the LED chip is required to be transferred, the magnetic piece adsorbs the LED chip, so that the LED chip can be temporarily adsorbed on the sacrificial piece, and then the sacrificial piece generates gas to impact the LED chip, so that the LED chip falls off from the sacrificial piece, and the transfer of the LED chip is completed. It can be understood that the chip transfer device does not use laser mucilage glue, so that the defects that the laser mucilage glue cannot accurately control the falling off of a chip in the LED chip transfer process and the like do not exist naturally, namely, the magnetic piece and the sacrificial piece replace the laser mucilage glue, so that the transfer yield of the LED chip is effectively improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a chip transferring device according to an embodiment of the present application.
Fig. 2 is a schematic flow chart of a chip transferring method according to an embodiment of the present application.
Fig. 3 is a schematic diagram of a first structure corresponding to the chip transferring method provided in the embodiment of the present application.
Fig. 4 is a schematic diagram of a second structure corresponding to the chip transferring method provided in the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
The embodiment of the application provides a chip transfer device and a chip transfer method, which effectively improve the transfer yield of LED chips. The following description is made in detail with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a chip transferring device according to an embodiment of the present application.
The chip transfer apparatus 100 includes a substrate 110, a magnetic member 120, and a sacrificial member 130 stacked. The magnetic piece can generate suction force to the LED chip so that the LED chip is adsorbed on the sacrificial piece, and the sacrificial piece can generate gas and enable the gas to impact the LED chip so that the LED chip is separated from the sacrificial piece.
The magnetic member 120 can generate magnetic force for attracting the LED chips 200, wherein the area of the front projection of the magnetic member 120 is equivalent to the area of the LED chips 200, and the magnetic member 120 can attract the LED chips 200. The magnetic member 120 has magnetism, for example, the magnetic member 120 is a magnet whose component is iron, cobalt, nickel or iron-nickel alloy. The thickness of the magnetic member 120 is less than 10 μm, and the magnetic member 120 may be coated on the substrate 110 by sputtering, deposition, or adhesion.
More specifically, the LED chip 200 provided in the present application may be a general LED (Light-Emitting Diode) chip, a micro LED (micro Light-Emitting Diode) chip, or a mini LED (sub-millimeter Light-Emitting Diode) chip. The LED chip 200 is a commonly used light emitting device, and emits light by energy released by recombination of electrons and holes, and the LED chip 200 is widely used in the field of illumination. The micro LED chip 200 is a high-density LED array formed by using self-luminous micro LEDs as light-emitting pixel units and assembling the light-emitting pixel units on a driving panel. Due to the small size, high integration level, self-luminescence and other features of the micro LED chip 200, the micro LED chip has greater advantages in terms of brightness, resolution, contrast, power consumption, service life, response speed, thermal stability and the like compared with the LCD chip in terms of display. The miniLED chip 200 is an LED chip 200 having a chip size of 50 to 200 μm. The miniLED chip 200 has begun to be applied to commercial fields such as monitoring command, high-definition performance, high-end cinema, medical diagnosis, advertisement display, conference, office display, virtual reality and the like. The LED chip 200 provided in the present application may have a vertical structure or a lateral structure. The LED chip 200 of the vertical type structure means that the anode and the cathode are respectively located at both sides of the LED chip 200, and the LED chip 200 of the lateral type structure means that the anode and the cathode are located at the same side of the LED chip 200.
The LED chip 200 includes a chip body and a metal disposed on the chip body. Wherein the metal is configured as a metal capable of being adsorbed by the chip transfer device 100. The chip body is any of the prior art, for example, the chip body may include a substrate, an epitaxial layer structure grown on the substrate, and an electrode located on the epitaxial layer structure. The metal may be sputtered or deposited to cover the electrodes. More specifically, the metal may be iron, cobalt, nickel or iron-nickel alloy, and when the metal is made of this material, the metal is more easily adsorbed by the metal adsorbed by the chip transfer apparatus 100. In some cases, the metal may also be the electrode itself of the chip body.
Wherein the sacrificial member 130 may generate a gas, such as hydrogen. The LED chip 200 adsorbed on the chip transfer device 100 may be detached from the sacrificial member 130 by the impact of the gas. In this embodiment, the magnetic member 120 and the sacrificial member 130 are disposed on the substrate 110 in a layered manner, and the magnetic member 120 is disposed between the sacrificial member 130 and the substrate 110, so that the hydrogen generated by the sacrificial member 130 can directly act on the LED chip 200, and when the sacrificial member 130 generates gas, the LED chip 200 can be impacted by the gas, and the impact force is greater than the magnetic force generated by the magnetic member 120, so that the LED chip 200 is detached from the sacrificial member 130. In other embodiments, the magnetic member 120 and the sacrificial member 130 may have other structures, for example, when the sacrificial member 130 has a layered structure, the magnetic member 120 may be magnetic particles doped in the sacrificial member 130.
The chip transferring device 100 provided in this embodiment of the present disclosure includes a substrate 110, a magnetic member 120, and a sacrificial member 130, where the substrate 110, the magnetic member 120, and the sacrificial member 130 are sequentially stacked, and when the LED chip 200 needs to be transferred, the magnetic member 120 adsorbs the LED chip 200, so that the LED chip 200 can be temporarily adsorbed on the sacrificial member 130, and then the sacrificial member 130 generates gas to impact the LED chip 200, so that the LED chip 200 is detached from the sacrificial layer 130, thereby completing the transfer of the LED chip 200. It can be understood that the chip transferring device 100 does not use laser glue, so that the defect that the laser glue cannot precisely control the falling off of the chip in the transferring process of the LED chip 200 does not exist naturally, that is, the magnetic component 120 and the sacrificial component 130 replace the laser glue, so that the transferring yield of the LED chip 200 is effectively improved.
The sacrificial member 130 may be an organic material or an inorganic material. In the present embodiment, the sacrificial member 130 is an inorganic material, more specifically, the sacrificial member 130 is a hydrogen-rich film having a hydrogen element capable of generating hydrogen. For example, the hydrogen-rich film is an amorphous silicon (a-Si) film or the like. When the sacrificial member 130 is an amorphous silicon (a-Si) film, the first laser light irradiates the sacrificial member 130, and can trigger the sacrificial member 130 to generate hydrogen. Wherein the content of the hydrogen element is greater than 5% and less than 20%, it is understood that if the content of the hydrogen element is smaller, the impact of the hydrogen generated by the sacrificial member 130 is smaller than the magnetic force generated by the magnetic member 120, so that the LED chip 200 cannot fall off from the sacrificial member 130; when the content of the hydrogen element is large, the impact of the hydrogen generated by the sacrificial member 130 is much larger than the magnetic force generated by the magnetic member 120, which is easy to damage the LED chip 200.
The thickness of the hydrogen-rich film is greater than 10nm and less than 50nm, it can be understood that if the thickness of the hydrogen-rich film is less than or equal to 10nm, the first laser easily penetrates the hydrogen-rich film, resulting in waste of energy of the first laser; if the thickness of the hydrogen-rich film is 50nm or more, the first laser light is easily absorbed by the hydrogen-rich film, so that the hydrogen element of the hydrogen-rich film cannot be fully utilized.
Referring to fig. 2 and fig. 3, fig. 2 is a schematic flow chart of a chip transferring method according to an embodiment of the present application, and fig. 3 is a schematic structural diagram of a first type of chip transferring method according to an embodiment of the present application.
The present application also provides a chip transfer method applied to the chip transfer apparatus 100, where the chip transfer method includes:
s101, controlling the magnetic piece 120 to generate suction force to the LED chip 200 so that the LED chip 200 is adsorbed on the sacrifice piece 130.
S102, controlling the sacrifice member 130 to generate gas, and enabling the gas to impact the LED chip 200 so as to enable the LED chip 200 to fall off from the sacrifice member.
Specifically, the sacrificial member 130 generates gas so that the LED chip 200 can be impacted by the gas, and the impact force is greater than the magnetic force generated by the magnetic member 120 so that the LED chip 200 is detached from the sacrificial member 130.
In some embodiments, after controlling the sacrificial member 130 to generate the gas and causing the gas to impinge on the LED chip 200 to detach the LED chip 200 from the sacrificial member 130, the method further comprises: a receiving substrate 400 is provided to carry the detached LED chip 200.
Specifically, in order to avoid the relative displacement between the LED chip 200 and the receiving substrate 400, the relative position of the LED chip 200 and the receiving substrate 400 may be fixed before the gas is generated, for example, a layer of solder may be coated on the receiving substrate 400, and the relative position of the LED chip 200 and the receiving substrate 400 may be fixed by thermal reflow; for another example, a layer of adhesive is coated on the receiving substrate 400, and the relative position of the LED chip 200 to the receiving substrate 400 is fixed by using the adhesion of the adhesive.
The LED chip 200 may be an R chip, a G chip, or a B chip to realize the transfer of three colors of R/G/B.
The receiving substrate 400 may be a TFT (Thin Film Transistor ) glass substrate, and after the receiving substrate 400 receives the LED chip 200, a TFT-LCD is manufactured, which has the advantages of fine and vivid image, light weight, low power consumption, and good environmental protection performance, and is widely used in televisions, notebook computers, mobile phones, monitors, and other devices.
In some embodiments, the sacrificial member 130 is a hydrogen-rich film that is capable of generating hydrogen. Wherein the step of controlling the sacrificial member 130 to generate the gas includes: the sacrificial member 130 is irradiated with the first laser so that the sacrificial member 130 generates hydrogen.
The sacrificial member 130 may be an organic material or an inorganic material. In the present embodiment, the sacrificial member 130 is an inorganic material, more specifically, the sacrificial member 130 is a hydrogen-rich film having a hydrogen element capable of generating hydrogen. For example, the hydrogen-rich film is an amorphous silicon (a-Si) film or the like. When the sacrificial member 130 is an amorphous silicon (a-Si) film, the first laser light irradiates the sacrificial member 130, and can trigger the sacrificial member 130 to generate hydrogen. Wherein the content of the hydrogen element is greater than 5% and less than 20%, it is understood that if the content of the hydrogen element is smaller, the impact of the hydrogen generated by the sacrificial member 130 is smaller than the magnetic force generated by the magnetic member 120, so that the LED chip 200 cannot fall off from the sacrificial member 130; when the content of the hydrogen element is large, the impact of the hydrogen generated by the sacrificial member 130 is much larger than the magnetic force generated by the magnetic member 120, which is easy to damage the LED chip 200.
The thickness of the hydrogen-rich film is greater than 10nm and less than 50nm, it can be understood that if the thickness of the hydrogen-rich film is less than or equal to 10nm, the first laser easily penetrates the hydrogen-rich film, resulting in waste of energy of the first laser; if the thickness of the hydrogen-rich film is 50nm or more, the first laser light is easily absorbed by the hydrogen-rich film, so that the hydrogen element of the hydrogen-rich film cannot be fully utilized.
In some embodiments, a donor substrate 300 is provided, with the LED chip 200 disposed on the donor substrate 300, before the magnetic member 120 is controlled to generate suction to the LED chip 200. The donor substrate 300 is irradiated with the second laser so that the LED chip 200 is detached from the donor substrate 300.
Specifically, the donor substrate 300 may be a wafer structure on which the LED chip 200 is disposed. In the present embodiment, a Laser Lift-off (LLO) technique is used to peel the LED chip 200 off from the donor substrate 300. The LLO technique is to decompose the donor substrate 300 using a second laser energy. Wherein the wavelength of the second laser is 308nm.
Referring to fig. 4, fig. 4 is a schematic diagram of a second structure corresponding to the chip transferring method according to the embodiment of the present application.
In some embodiments, before providing the receiving substrate 400, further comprising: providing a second chip transferring device 500 to carry the detached LED chip 200; the second chip transfer device 500 is irradiated with the third laser light such that the LED chip 200 is detached from the second chip transfer device 500.
It is understood that when the LED chip 200 may be of a vertical type structure, the LED chip 200 can be flipped over using the second chip transfer device 500, thereby realizing positive and negative electrodes of the LED chip 200 to be connected to the TFT glass panel.
The second chip transferring device 500 may have the same structure as the first chip transferring device 100 described above, for example, the second chip transferring device 500 also includes a substrate 510, a magnetic member and a sacrificial member. The magnetic piece is arranged on the substrate, the magnetic piece can adsorb the LED chip, the sacrificial piece is arranged on one side, far away from the substrate, of the magnetic piece, and the sacrificial piece can generate gas which can enable the LED chip to fall off from the substrate. The second chip transferring apparatus 500 may also have a different structure from the first chip transferring apparatus 100 described above, for example, the second chip transferring apparatus 500 includes a substrate 510 and a laser glue dispenser 520, where the side of the second chip transferring apparatus 500 attached with the laser glue dispenser 520 is used for receiving the dropped LED chip 200, and then the laser glue dispenser 520 is irradiated with a third laser to decompose the laser glue dispenser 520, so that the LED chip 200 drops onto the receiving substrate.
The chip transferring device 100 provided in this embodiment of the present disclosure includes a substrate 110, a magnetic member 120, and a sacrificial member 130, where the substrate 110, the magnetic member 120, and the sacrificial member 130 are sequentially stacked, and when the LED chip 200 needs to be transferred, the magnetic member 120 adsorbs the LED chip 200, so that the LED chip 200 can be temporarily adsorbed on the sacrificial member 130, and then the sacrificial member 130 generates gas to impact the LED chip 200, so that the LED chip 200 is detached from the sacrificial layer 130, thereby completing the transfer of the LED chip 200. It can be understood that the chip transferring device 100 does not use laser glue, so that the defect that the laser glue cannot precisely control the falling off of the chip in the transferring process of the LED chip 200 does not exist naturally, that is, the magnetic component 120 and the sacrificial component 130 replace the laser glue, so that the transferring yield of the LED chip 200 is effectively improved.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
In the description of the present application, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more features.
The chip transfer device and the chip transfer method provided in the embodiments of the present application are described in detail above. Specific examples are set forth herein to illustrate the principles and embodiments of the present application, with the description of the examples given above only to assist in understanding the present application. Meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.
Claims (10)
1. The utility model provides a chip transfer device, its characterized in that includes first chip transfer device and second chip transfer device, first chip transfer device includes base plate, magnetic part and the sacrifice piece of laminating the setting in proper order, wherein:
the magnetic piece can generate suction force on the LED chip so that the LED chip is adsorbed on the sacrificial piece, and the sacrificial piece can generate gas and enable the gas to impact the LED chip so that the LED chip is separated from the sacrificial piece;
the second chip transfer device bears the LED chip that drops from on the first chip transfer device, the second chip transfer device includes second base plate and glue film, the glue film is kept away from one side of second base plate is used for bearing the LED chip, the glue film sets up to laser and solves viscose to make under outside laser irradiation, laser and solve viscose and decompose, so that the LED chip drops.
2. The chip transfer apparatus according to claim 1, wherein the sacrificial member is a hydrogen-rich film capable of generating hydrogen gas by the first laser.
3. The chip transfer apparatus of claim 2, wherein the hydrogen-rich film has a thickness greater than 10nm and less than 50nm.
4. The chip transfer apparatus according to claim 2, wherein the hydrogen element content of the hydrogen-rich film is more than 5% and less than 20%.
5. The chip transfer apparatus of claim 1, wherein the magnetic member has a thickness of less than 10 μm.
6. A chip transfer method, characterized by being applied to the chip transfer apparatus of any one of claims 1 to 5, comprising:
controlling the magnetic piece to generate suction force on the LED chip so as to enable the LED chip to be adsorbed on the sacrificial piece;
controlling the sacrificial member to generate gas, and enabling the gas to impact the LED chip so as to enable the LED chip to fall off from the sacrificial member and be carried by a second chip transferring device;
and irradiating the adhesive layer of the second chip transfer device by using laser so as to enable the LED chip to fall off from the second chip transfer device.
7. The chip transfer method according to claim 6, wherein the sacrifice member is a hydrogen-rich film capable of generating hydrogen gas, and the control of the sacrifice member to generate gas, the chip transfer method comprising: the sacrificial member is irradiated with a first laser so that the sacrificial member generates hydrogen.
8. The chip transfer method according to claim 6, further comprising, before said controlling said magnetic member to generate attraction force to the LED chip:
providing a donor substrate, wherein an LED chip is arranged on the donor substrate;
irradiating the donor substrate with a second laser so that the LED chip is detached from the donor substrate.
9. The chip transfer method according to claim 8, wherein the wavelength of the second laser is 308nm.
10. The method of chip transfer according to claim 6, wherein after the controlling the sacrifice member to generate the gas and causing the gas to impinge on the LED chip to peel off the LED chip from the sacrifice member, further comprising: a receiving substrate is provided to carry the LED chips that are detached.
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| CN202111437615.7A CN114156374B (en) | 2021-11-30 | 2021-11-30 | Chip transfer device and chip transfer method |
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| CN202111437615.7A CN114156374B (en) | 2021-11-30 | 2021-11-30 | Chip transfer device and chip transfer method |
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| CN114156374B true CN114156374B (en) | 2024-04-12 |
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