CN112967984A - Huge transfer method of microchip and display back plate - Google Patents
Huge transfer method of microchip and display back plate Download PDFInfo
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- CN112967984A CN112967984A CN202011018839.XA CN202011018839A CN112967984A CN 112967984 A CN112967984 A CN 112967984A CN 202011018839 A CN202011018839 A CN 202011018839A CN 112967984 A CN112967984 A CN 112967984A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention relates to a massive transfer method of microchips and a display back plate. Forming a sacrificial layer on a transfer substrate, forming a plurality of mutually independent grooves on the sacrificial layer, and then forming an adhesive layer which covers the sacrificial layer and fully fills the grooves; bonding a plurality of microchips to be transferred on the transient substrate with the adhesive layer, and separating the microchips from the transient substrate; separating the adhesive layers between the adjacent microchips and removing the sacrificial layer, wherein the adhesive layers in the grooves form support bodies for supporting the microchips on the transfer substrate; when picking up, external force is applied to the supporting body corresponding to the microchip to be picked up, the supporting body is separated from the transfer substrate, and then the microchip on the supporting body can be picked up from the transfer substrate, so that the step of performing debonding treatment on the adhesion layer on the transfer substrate in a light or heat mode can be omitted, the microchip transfer process is simplified, and the convenience and the transfer efficiency of microchip transfer are improved.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a massive transfer method of microchips and a display back plate.
Background
micro-LEDs (micro-Light Emitting diodes) are popular in the industry as a new generation display technology, compared with the conventional liquid crystal display technology, and have the advantages of higher brightness, better Light Emitting efficiency, better color reproducibility, lower power consumption, and the like. The advantages of Micro LEDs derive from smaller pitch, which is accompanied by size reduction and also technical difficulties. In the prior art, a debondable adhesive layer is generally disposed on the first temporary substrate, the micro-LED chips are transferred from the growth substrate to the first temporary substrate by adhesion through the debondable adhesive layer, and then the micro-LED chips are transferred from the first temporary substrate to the display backplane by using the second temporary substrate. In the process, because the adhesive layer on the first temporary substrate has strong adhesion to the micro-LED chip, the adhesive layer on the first temporary substrate needs to be debonded in a light or heat mode to transfer the micro-LED chip to the second temporary substrate.
Therefore, how to realize convenient and efficient transfer of the LED chip is a problem that needs to be solved urgently.
Disclosure of Invention
In view of the above-mentioned shortcomings of the related art, the present application aims to provide a bulk transfer method of microchips and a display backplane, which aims to solve the problems of complicated process and low efficiency in the transfer of LED chips in the related art.
A method for macro transfer of microchips, comprising:
forming a sacrificial layer on a transfer substrate;
forming a plurality of mutually independent grooves on the sacrificial layer, wherein the grooves correspond to a plurality of microchips to be transferred on the transient substrate one by one, and the bottoms of the grooves are communicated with the transfer substrate,
forming an adhesive layer covering the sacrificial layer, wherein the adhesive layer fills all the grooves and forms adhesion with the transfer substrate;
bonding a plurality of microchips to be transferred on the transient substrate to the adhesive layer, wherein the microchips positioned on the adhesive layer correspond to the grooves one by one after bonding;
separating the microchip from the transient substrate;
performing partition treatment on the adhesive layers between the adjacent microchips to separate the adhesive layers between the adjacent microchips from each other;
removing the sacrificial layer, wherein the adhesive glue layer positioned in each groove is formed into a support body for supporting each microchip on the transfer substrate;
and applying an external force to the support corresponding to the microchip to be picked up to separate the support from the transfer substrate so as to pick up the microchip on the support from the transfer substrate and transfer the microchip to a target area.
According to the massive transfer method of the microchip, the sacrificial layer is formed on the transfer substrate, the plurality of mutually independent grooves are formed on the sacrificial layer, and then the adhesive glue layer which covers the sacrificial layer and fills the grooves is formed; bonding a plurality of microchips to be transferred on the transient substrate with the adhesive layer, and separating the microchips from the transient substrate; separating the adhesive layers between the adjacent microchips to separate the adhesive layers between the adjacent microchips from each other; then removing the sacrificial layer, wherein the adhesive glue layer positioned in each groove forms a support body for supporting each microchip on the transfer substrate; when picking up, an external force is applied to the support corresponding to the microchip to be picked up, so that the support is separated from the transfer substrate, and the microchip on the support is picked up from the transfer substrate, thereby omitting the step of performing the debonding treatment on the adhesion layer on the transfer substrate by light or heat, simplifying the microchip (such as but not limited to a micro LED chip) transfer process, and improving the convenience and the transfer efficiency of microchip transfer.
Based on the same inventive concept, the application also provides a display back plate, wherein a plurality of die bonding areas are arranged on the display back plate; the display back plate further comprises a plurality of micro LED chips, and the micro LED chips are transferred to the solid crystal area through the massive transfer method of the microchip to complete bonding.
According to the manufacturing method of the display back plate, the manufacturing method of the display back plate is more convenient and efficient due to the adoption of the massive transfer method of the microchip, so that the manufacturing method of the display back plate is more convenient and efficient, the system period of the display version is shortened to a certain extent, and the manufacturing cost of the display back plate is reduced.
Drawings
FIG. 1 is a schematic flow chart of a mass transfer method for microchips according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a process for forming a groove according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an adhesive layer formed according to an embodiment of the present invention;
FIG. 4-1 is a schematic diagram illustrating a transient substrate and a transfer substrate bonded according to an alternative embodiment of the invention;
FIG. 4-2 is a schematic diagram of a transient substrate removal provided in accordance with an alternative embodiment of the present invention;
FIGS. 4-3 are schematic diagrams illustrating the separation of the adhesive bond lines provided by an alternative embodiment of the present invention;
FIGS. 4-4 are schematic diagrams of sacrificial layer removal provided in accordance with an alternative embodiment of the present invention;
FIG. 5 is a first schematic diagram of a microchip picking process according to an alternative embodiment of the present invention;
FIG. 6 is a schematic view of a microchip picking process according to an embodiment of the present invention;
FIG. 7-1 is a schematic view of a microchip transfer process according to another alternative embodiment of the present invention;
FIG. 7-2 is a schematic diagram of a microchip transfer process according to another alternative embodiment of the present invention;
7-3 for another alternative embodiment of the invention provides a microchip transfer process diagram II;
description of reference numerals:
1-transfer substrate, 2-sacrificial layer, 3-mask layer, 4-adhesive layer, 41-support column, 5-transient substrate, 6-microchip, 7-pickup substrate, 8-pickup bump, 9-backplane substrate, and 10-backplane film layer.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the related art, when the micro-LED chip is transferred from the first temporary substrate, the micro-LED chip can be transferred only by debonding the first adhesive layer on the first temporary substrate in a light or heat manner due to the strong adhesion of the first adhesive layer on the first temporary substrate to the micro-LED chip.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
In the bulk transfer method of the microchip exemplified in this embodiment, a sacrificial layer is formed on a transfer substrate, a plurality of grooves independent of each other are formed on the sacrificial layer, and then an adhesive layer is formed to cover the sacrificial layer and fill the grooves; the adhesive glue layer in each groove can be formed into a support body for supporting each microchip on the transfer substrate; when picking up, the support body corresponding to the microchip to be picked up is applied with external force to separate the support body from the transfer substrate, so that the step of carrying out debonding treatment on the adhesion layer on the transfer substrate in a light or heat mode is not needed, the microchip transfer process can be simplified, and the convenience and the transfer efficiency of microchip transfer are improved.
For easy understanding, the present embodiment will be described below by taking a bulk transfer method of a microchip shown in fig. 1 as an example:
referring to FIG. 1, the mass transfer method of the microchip includes but is not limited to:
s101: a sacrificial layer is formed on a transfer substrate.
The material of the transfer substrate is not limited in this embodiment, for example, the material of the transfer substrate may be any one of, but not limited to, glass, sapphire, quartz and silicon.
In this embodiment, the arrangement form, the formation process, and the gas thickness of the sacrificial layer provided on the transfer substrate can be flexibly set. In addition, the material of the sacrificial layer in this embodiment can also be flexibly set. For example, in one example, the sacrificial layer in the present embodiment may be, but is not limited to, an indium phosphide InP layer. A sacrificial layer with a thickness of 8 μm to 20 μm may be formed on the surface of the transfer substrate by, but not limited to, various deposition methods.
S102: a plurality of mutually independent grooves are formed on the sacrificial layer, the formed grooves correspond to a plurality of microchips to be transferred on the transient substrate one by one, and the bottoms of the grooves are communicated with the transfer substrate.
The microchip in this embodiment may be various micro-sized elements integrated at high density on a growth substrate (may also be referred to as a substrate). Examples include, but are not limited to, Micro LED chips, photo-detector diodes, MOS devices, MEMS (Micro-Electro-Mechanical systems) devices, and the like.
The micro LED chip in this embodiment includes an epitaxial layer and an electrode, and this embodiment does not limit the specific structure of the epitaxial layer of the micro LED chip, and in an example, the epitaxial layer of the micro LED chip may include an N-type semiconductor, a P-type semiconductor, and an active layer located between the N-type semiconductor and the P-type semiconductor, and the active layer may include a quantum well layer, and may further include other structures. In other examples, the epitaxial layer may further optionally include at least one of a reflective layer and a passivation layer. The material and shape of the electrodes in this embodiment are not limited, and for example, the material of the electrodes may include, but is not limited to, at least one of Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, and Ag.
It should be understood that the micro LED chip in the present embodiment may include but is not limited to at least one of a micro-LED chip and a mini-LED chip, for example, in one example, the micro LED chip may be a micro-LED chip; in yet another example, the micro LED chip may be a mini-LED chip.
It should be understood that the micro LED chip in the present embodiment may include, but is not limited to, at least one of a flip LED chip and a front-mounted LED chip, for example, in one example, the micro LED chip may be a flip LED chip; in yet another example, the micro LED chip may be a face-up LED chip.
In an example of this embodiment, an example of forming a plurality of mutually independent grooves on a sacrificial layer is shown in fig. 2-1 and 2-2, and includes:
s201: a sacrificial layer 2 is formed on a transfer substrate 1.
S202: a mask layer 3 is formed on the sacrificial layer 2, and the region of the sacrificial layer 2 where the groove is to be formed is exposed outside the mask layer 3.
That is, the pattern of the mask layer 3 may be arranged corresponding to the plurality of microchips to be transferred on the transient substrate, so that the formed grooves correspond one-to-one to the plurality of microchips to be transferred on the transient substrate.
The material of the mask layer 3 in this embodiment can be flexibly selected, and for example, but not limited to, photoresist can be used as the mask layer 3 to pattern the sacrificial layer 2.
S203: and etching the sacrificial layer 2 exposed outside the mask layer 3 by using the target solution to form a groove.
The target solution used in this embodiment does not corrode or substantially does not corrode the transfer substrate and the mask layer. For example, in one example, when InP is used as the sacrificial layer, the sacrificial layer may be etched with a hydrochloric acid of a predetermined concentration. For example, InP may be etched with hydrochloric acid at a concentration of 30% to 50% to obtain the groove shape shown in fig. 2-2.
InP+3HCl＝InCl3+PH3↑
S204: the mask layer 3 is removed.
For example, in one example, masking layer 3 may be removed by, but is not limited to, isopropanol, acetone, and a stripper. The recess pattern obtained after the mask layer 3 is removed is shown in fig. 2-2.
S103: and forming an adhesive glue layer covering the sacrificial layer, wherein each groove is filled with the adhesive glue layer and the adhesive glue layer is adhered to the transfer substrate.
In this embodiment, the process of forming the adhesive layer covering the sacrificial layer on the transfer substrate is not limited. For example, but not limited to, coating, molding, injection molding, etc. The material of the adhesive layer used in this embodiment may also be flexibly selected, for example, but not limited to, photoresist. When the photoresist is used, a positive photoresist or a negative photoresist may be used.
And the adhesive glue layer filled in each groove is used for forming the support pillar subsequently. For example, referring to fig. 3, a sacrificial layer 2 is formed on a transfer substrate 1, grooves corresponding to microchips to be transferred on a temporary substrate one by one are formed on the sacrificial layer 2, and an adhesive layer 4 formed on the transfer substrate 1 and covering the sacrificial layer 2, wherein the adhesive layer filled in the grooves forms a support 41 and is bonded to the transfer substrate 1.
S104: a plurality of microchips and the laminating of adhesion glue film that wait to shift on the transient state base plate, after the laminating, be located a plurality of microchips and a plurality of recess one-to-one on the adhesion glue film.
It should be understood that the temporary substrate in this embodiment may be a growth substrate, and may also be a substrate for carrying the substrate transferred from the growth substrate. For example, in the case of a microchip micro LED chip, an adhesive layer may be provided on the temporary substrate, and after the surface of the growth substrate on which the microchip is formed and the surface of the temporary substrate on which the adhesive layer is formed are bonded to each other, the growth substrate may be peeled off using a laser. By utilizing the material band gap difference (GaN:3.3eV < laser energy < sapphire substrate: 9.9eV), a laser light source in an ultraviolet band irradiates a sample through the growth substrate, GaN at the sapphire/GaN interface is thermally decomposed to generate Ga and N2 ℃,. Ga metal is heated and melted to realize the separation of the growth substrate and the GaN.
It should be understood that the material of the growth substrate in this embodiment is a semiconductor material that can grow the epitaxial layer of the micro LED chip on the growth substrate, for example, the material of the growth substrate may be, but is not limited to, sapphire, silicon carbide, silicon, gallium arsenide, and may also be other semiconductor materials, and is not limited herein.
Referring to fig. 4-1, a schematic diagram of an exemplary transient substrate after bonding a plurality of microchips to be transferred to an adhesive layer is shown, wherein a plurality of microchips 6 on a transient substrate 5 correspond to supporting bodies 41 correspondingly formed in grooves one by one.
S105: the microchip is separated from the transient substrate.
One example is shown in fig. 4-2, where the transient substrate 5 may be peeled using, but not limited to, van der waals forces.
S106: and (3) performing partition treatment on the adhesive layers between the adjacent microchips so that the adhesive layers between the adjacent microchips are separated from each other.
For example, in one example, the adhesive layer may be patterned by, but not limited to, exposing and developing the adhesive layer through a photolithography process, and the microchip is separated together with the adhesive layer to expose the sacrificial layer, as shown in fig. 4-3. The adhesive layers 4 between adjacent microchips 6 are separated from each other to facilitate the pickup of the subsequent microchips 6.
S107: the sacrificial layer is removed and the adhesive glue layer located in each recess is formed as a support for supporting each microchip on the transfer substrate.
For example, the sacrificial layer may be completely etched away using a target solution that does not attack the transfer substrate and the adhesive glue layer. Referring to FIGS. 4-4, after the sacrificial layer 2 is removed, the microchip 6 is supported on the transfer substrate 1 by a support 41.
S108: and applying an external force to a support corresponding to the microchip to be picked up, separating the support from the transfer substrate, so as to pick up the microchip on the support from the transfer substrate and transfer the microchip to the target area.
For example, in one example, applying an external force to a support corresponding to the microchip to be picked up to separate the support from the transfer substrate may include, but is not limited to:
applying an external force to a support corresponding to the microchip to be picked up, and breaking the support to separate the support from the transfer substrate; for example, a pressure (may be directed toward the transfer substrate or may be directed obliquely toward the transfer substrate) may be applied to a support corresponding to the microchip to be picked up, and the support may be broken to be separated from the transfer substrate.
It should be understood that, when the support body is broken by a force, the position of the broken position may be influenced by the shape, thickness, force direction, material, etc. of the support body, and the position of the broken position may be at the upper end, the lower end or the middle of the support body.
An example is shown in fig. 5, which includes:
s501: and (3) attaching the corresponding sticky pick-up bulges 8 on the pick-up substrate 7 with the corresponding microchip 6 to be picked up, wherein the microchip 6 is adhered to the pick-up bulges.
S502: a pressure is applied in the direction toward the transfer substrate, so that the support 41 under the picked-up microchip 6 is broken.
S503: the support 41 with the fracture remaining on the microchip 6 and the microchip are picked up.
S504: the support 41 remaining on the microchip 6 is removed.
For another example, in another example, applying an external force to a support corresponding to the microchip to be picked up to separate the support from the transfer substrate may include, but is not limited to:
applying a pulling force in a direction away from the transfer substrate to a support corresponding to the microchip to be picked up, so that the support is separated from the transfer substrate; the adhesion between the microchip and the adhesive glue layer in this example is greater than the adhesion between the support and the transfer substrate.
An example is shown in fig. 6, which includes:
s601: and (3) attaching the corresponding sticky pick-up bulges 8 on the pick-up substrate 7 with the corresponding microchip 6 to be picked up, wherein the microchip 6 is adhered to the pick-up bulges.
S602: a pulling force in a direction away from the transfer substrate is applied, so that the support 41 under the picked-up microchip 6 is detached from the transfer substrate 1.
S603: the support 41 remaining on the microchip 6 and the microchip 6 are picked up.
S604: the support 41 remaining on the microchip 6 is removed.
In this embodiment, when picking up the microchip from the transfer substrate, a single picking-up manner may be adopted, a multiple batch picking-up manner may also be adopted, and when the multiple batch picking-up manner is adopted, the microchip may also be selectively picked up according to specific application requirements. And it should be understood that, in the embodiment, when picking up the microchip from the transfer substrate, the microchip may be picked up by using a pick-up substrate, or picked up by using a transfer head or other methods, and specifically, the microchip may be flexibly selected according to specific application requirements.
This embodiment may also include transferring the picked up microchips to a target area. For example, the target area in this embodiment may be a die attach area on a display backplane (the display backplane in this embodiment may be a display backplane of various electronic devices that need to use a micro LED chip for display or illumination, such as but not limited to display backplanes of various display devices), or may be a die attach area on other circuit boards, or a corresponding area on other transfer substrates, which may be flexibly set according to an application scenario, and is not described herein again.
As can be seen from the above examples, in this embodiment, after picking up the microchip on the support from the transfer substrate, before transferring the microchip to the target area, the method further includes: the adhesive layer adhered to the microchip was removed.
For example, when the adhesive layer is a photoresist layer, removing the adhesive layer adhered to the microchip may include, but is not limited to: the adhesive layer is removed by a photoresist cleaning solution.
It can be seen that the bulk transfer method of the microchip provided by this embodiment can be implemented by forming a sacrificial layer on a transfer substrate and forming a plurality of mutually independent grooves on the sacrificial layer, and then forming an adhesive layer covering the sacrificial layer and filling the grooves with the adhesive layer; the adhesive glue layer located in each groove can be formed into a support body for supporting each microchip on the transfer substrate, namely a weakening structure is formed; therefore, when the chip is picked up, external force is applied to the supporting body corresponding to the microchip to be picked up, so that the supporting body can be separated from the transfer substrate, the step of debonding the adhesion layer on the transfer substrate in a light or heat mode is not needed, the microchip transfer process can be simplified, and the convenience and the transfer efficiency of microchip transfer are improved.
Another alternative embodiment of the invention:
the embodiment provides a display back plate and a manufacturing method thereof, wherein the display back plate is provided with a plurality of die bonding areas; in the manufacturing method of the display backplane, the transfer method for transferring the micro LED chip on the growth substrate to the die attach region to complete bonding may be, but is not limited to, the bulk transfer method of the microchip shown in the above embodiments.
The embodiment also provides a display device, which can be various electronic devices that use a display back plate manufactured by a micro LED chip to perform display, such as but not limited to various smart mobile terminals, PCs, displays, electronic billboards, and the like, wherein the display back plate of the display device can be manufactured by but not limited to the manufacturing method of the display back plate.
For easy understanding, based on the mass transfer method of the microchip shown in the above embodiments, the present embodiment is described below as a specific application example for easy understanding. In this application example, please refer to fig. 7-1 to 7-3 for the microchip transferring process, which includes but is not limited to:
s701: a sacrificial layer 2 is formed on a transfer substrate 1.
The transfer substrate 1 in the present embodiment may employ any one of, but is not limited to, glass, sapphire, quartz, and silicon.
The sacrificial layer 2 in the present embodiment may be, but is not limited to, an indium phosphide InP layer. A sacrificial layer with a thickness of 10 μm may be formed on the surface of the transfer substrate by, but not limited to, various deposition methods.
S702: a mask layer 3 is formed on the sacrificial layer 2.
The mask layer in this embodiment may be, but is not limited to, a photoresist, and the pattern on the mask layer 3 corresponds to the distribution of the microchips to be transferred on the transient substrate. The region of the sacrificial layer 2 where the groove is to be formed is exposed outside the mask layer 3. That is, the pattern of the mask layer 3 may be arranged corresponding to the plurality of microchips to be transferred on the transient substrate, so that the formed grooves correspond one-to-one to the plurality of microchips to be transferred on the transient substrate.
S703: and etching the sacrificial layer 2 exposed outside the mask layer 3 by using the target solution to form a groove.
The sacrificial layer of the present embodiment is made of InP, and the sacrificial layer may be etched with hydrochloric acid of a predetermined concentration. InP may be etched, for example, with hydrochloric acid at a concentration of 30% to 50% to provide the groove shape shown in FIG. 7-2.
S704: the mask layer 3 is removed. Masking layer 3 may be removed by, but is not limited to, isopropanol, acetone, and a stripper. The recess pattern obtained after the mask layer 3 is removed is shown in fig. 7-2.
S705: an adhesive glue layer 4 is formed covering the sacrificial layer 2, the adhesive glue layer 4 filling the grooves and forming a bond with the transfer substrate 1.
For example, a photoresist layer may be formed on the sacrificial layer 2 as the adhesive layer 4 by, but not limited to, spin coating, and a positive photoresist or a negative photoresist may be used. And the adhesive glue layer filled in each groove is used for forming the support pillar subsequently.
S706: the plurality of microchips 6 to be transferred on the transient substrate 5 are attached to the adhesive layer 4, and after the attachment, the plurality of microchips and the plurality of grooves (i.e., the plurality of supporting bodies 41) on the adhesive layer 4 are in one-to-one correspondence.
The temporary substrate in this embodiment is a substrate for carrying the substrate transferred from the growth substrate. For example, in the case of a microchip micro LED chip, an adhesive layer may be provided on the temporary substrate, and after the surface of the growth substrate on which the microchip is formed and the surface of the temporary substrate on which the adhesive layer is formed are bonded to each other, the growth substrate may be peeled off using a laser. By utilizing the material band gap difference (GaN:3.3eV < laser energy < sapphire substrate: 9.9eV), a laser light source in an ultraviolet band irradiates a sample through the growth substrate, GaN at the sapphire/GaN interface is thermally decomposed to generate Ga and N2 ℃,. Ga metal is heated and melted to realize the separation of the growth substrate and the GaN.
S707: the microchips 6 are separated from the transient substrate 5, and the adhesive glue layers between the adjacent microchips are subjected to partition treatment, so that the adhesive glue layers between the adjacent microchips are separated from each other.
In this example, the transient substrate 5 may be peeled using, but not limited to, van der waals forces.
In this example, the adhesive glue layer 4 is patterned by, but not limited to, exposing and developing the adhesive glue layer 4 through a yellow light process, the microchips 6 are separated together with the adhesive glue layer 4, the sacrificial layer 4 is exposed, and the adhesive glue layers 4 between adjacent microchips 6 are separated from each other, thereby facilitating the pickup of the subsequent microchips 6.
S708: the sacrificial layer 2 is removed and the adhesive glue layer 4 located in each recess forms a support for supporting each microchip 6 on the transfer substrate 1.
For example, the sacrifice layer may be completely etched away by hydrochloric acid, and as shown in fig. 7-2 as an example, after the sacrifice layer 2 is removed, the microchip 6 is supported on the transfer substrate 1 by a support 41.
S709: and adhering the corresponding pickup bulges 8 with viscosity on the pickup substrate 7 to the corresponding microchip 6 to be picked up, wherein the microchip 6 is adhered to the pickup bulges 8.
S710: a pressure is applied in the direction toward the transfer substrate, so that the support 41 under the picked-up microchip 6 is broken.
S711: the support 41 broken and remaining on the microchip 6 and the microchip are picked up, the support 41 remaining on the microchip 6 is removed, and the picked-up microchip is transferred to the backing sheet film layer 10 on the backing sheet substrate 9, specifically to the die bonding area on the backing sheet film layer 10.
S712: the bonding of the microchip is completed and the microchip is separated from the pickup bumps 8.
Referring to fig. 7-3, In the present application example, a metal Bump material (for example, but not limited to, tin Sn or indium In) required for bonding and welding may be prepared In advance In the die attach region on the back plate film layer 10, an electrode of a microchip (for example, a micro LED chip) micro LED chip is butted with the Bump by pressure bonding, and then the Bump is heated to melt, so as to weld the electrode of the micro LED chip; and then, removing the pickup substrate 7, wherein the pickup bumps 8 of the pickup substrate 7 have weak viscosity to the micro LED chip, and the electrode binding fixing force of the micro LED chip is greater than the adhesion force of the pickup bumps 8 to the micro LED chip, so that the pickup substrate 7 is not debonded, and the pickup substrate 7 can be separated from the pickup substrate 7, thereby transferring the micro LED chip to a die bonding area to complete bonding. The whole process does not need to carry out complex de-bonding process treatment, simplifies the chip transfer process and improves the convenience and efficiency of chip transfer.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A method for mass transfer of microchips, comprising:
forming a sacrificial layer on a transfer substrate;
forming a plurality of mutually independent grooves on the sacrificial layer, wherein the grooves correspond to a plurality of microchips to be transferred on the transient substrate one by one, and the bottoms of the grooves are communicated with the transfer substrate;
forming an adhesive layer covering the sacrificial layer, wherein the adhesive layer fills all the grooves and forms adhesion with the transfer substrate;
bonding a plurality of microchips to be transferred on the transient substrate to the adhesive layer, wherein the microchips positioned on the adhesive layer correspond to the grooves one by one after bonding;
separating the microchip from the transient substrate;
performing partition treatment on the adhesive layers between the adjacent microchips to separate the adhesive layers between the adjacent microchips from each other;
removing the sacrificial layer, wherein the adhesive glue layer positioned in each groove is formed into a support body for supporting each microchip on the transfer substrate;
and applying an external force to the support corresponding to the microchip to be picked up to separate the support from the transfer substrate so as to pick up the microchip on the support from the transfer substrate and transfer the microchip to a target area.
2. The mass transfer method for microchip according to claim 1, wherein said sacrificial layer is an indium phosphide layer.
3. The mass transfer method for microchips according to claim 1 or 2, wherein said forming a plurality of mutually independent grooves on said sacrificial layer comprises:
forming a mask layer on the sacrificial layer, wherein the region of the sacrificial layer, in which the groove is to be formed, is exposed outside the mask layer;
etching the sacrificial layer exposed outside the mask layer by using a target solution to form the groove, wherein the target solution does not corrode the transfer substrate and the mask layer;
and removing the mask layer.
4. The method for bulk transfer of microchips according to claim 1 or 2, wherein said removing said sacrificial layer comprises:
and etching all the sacrificial layer by using a target solution, wherein the target solution does not corrode the transfer substrate and the adhesive glue layer.
5. The method for bulk transfer of microchips according to claim 1 or 2, wherein said applying an external force to the support corresponding to the microchip to be picked up to separate the support from the transfer substrate comprises:
and applying an external force to the support corresponding to the microchip to be picked up, and breaking the support to separate the support from the transfer substrate.
6. The method for bulk transfer of microchips according to claim 5, wherein said applying an external force to the support corresponding to the microchip to be picked up to break the support and separate it from the transfer substrate comprises:
and applying a pressure to the support corresponding to the microchip to be picked up toward the transfer substrate, and breaking the support to separate the support from the transfer substrate.
7. The method for bulk transfer of microchips according to claim 1 or 2, wherein said applying an external force to the support corresponding to the microchip to be picked up to separate the support from the transfer substrate comprises:
applying a pulling force in a direction away from the transfer substrate to the support corresponding to the microchip to be picked up, so that the support is separated from the transfer substrate; the adhesion force between the microchip and the adhesive glue layer is greater than the adhesion force between the support and the transfer substrate.
8. The method for mass transfer of microchips according to claim 1 or 2, wherein the step of picking up the microchip on the support from the transfer substrate and before transferring the microchip to the target area further comprises:
removing the adhesive layer adhered to the microchip.
9. The method for mass transfer of microchips according to claim 8, wherein said adhesive layer is a photoresist layer:
the removing the adhesive glue layer adhered to the microchip includes:
and removing the adhesive layer by using a photoresist cleaning solution.
10. A display back plate is characterized in that a plurality of die bonding areas are arranged on the display back plate; the display backplane further comprises a plurality of micro LED chips, wherein the micro LED chips are transferred to the solid crystal region by the bulk transfer method of the microchip according to any one of claims 1 to 9 to complete bonding.
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