CN114150368A - Material melting device and using method thereof - Google Patents
Material melting device and using method thereof Download PDFInfo
- Publication number
- CN114150368A CN114150368A CN202111214784.4A CN202111214784A CN114150368A CN 114150368 A CN114150368 A CN 114150368A CN 202111214784 A CN202111214784 A CN 202111214784A CN 114150368 A CN114150368 A CN 114150368A
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- heat insulation
- crucible
- material melting
- melting device
- water
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- 239000000463 material Substances 0.000 title claims abstract description 54
- 238000002844 melting Methods 0.000 title claims abstract description 42
- 230000008018 melting Effects 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000009413 insulation Methods 0.000 claims abstract description 55
- 230000007246 mechanism Effects 0.000 claims abstract description 41
- 238000001816 cooling Methods 0.000 claims abstract description 27
- 230000000903 blocking effect Effects 0.000 claims abstract description 3
- 239000002210 silicon-based material Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000010309 melting process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000006506 Brasenia schreberi Nutrition 0.000 description 1
- 244000267222 Brasenia schreberi Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a material melting device and a use method thereof, wherein the material melting device comprises a crucible and a water-cooling screen arranged above the crucible, and the material melting device further comprises a heat insulation mechanism, the heat insulation mechanism comprises a heat insulation plate, the heat insulation plate is arranged between the crucible and the water-cooling screen, and the heat insulation plate is used for blocking heat convection between the crucible and the water-cooling screen.
Description
Technical Field
The invention relates to a heating furnace, in particular to a material melting device and a using method thereof.
Background
In the conventional RCZ monocrystalline silicon drawing process, the service life of a single crucible can reach more than 300h, and the number of drawn silicon rods is about 5-7. After the single crystal furnace is shut down and is disassembled clearly, feeding can be carried out, a certain amount of silicon material can be filled into the quartz crucible at the moment, the quartz crucible is heated after evacuation and pressurization, the silicon material in the crucible is melted, after the silicon material which is filled in the crucible for the first time is melted, the quartz crucible is continuously fed into the quartz crucible through the quartz feeding cylinder for multiple times, and finally, the feeding process is completed when the silicon material is fed to the feeding limit of the crucible.
Taking the 32-inch thermal field which is the most common thermal field at present as an example, after the silicon material in the crucible is completely melted, the total charging amount of the crucible is about 650kg, and the initial charging amount of the crucible is about 350 kg. In the crucible initial charging and material melting process, the single crystal furnace has a temperature rise process, and the whole process lasts for about 1-2 hours, so the initial charging and material melting efficiency is lower than the secondary charging and material melting efficiency. At present, the initial charging and material melting efficiency is about 50kg/h, and the secondary charging and material melting efficiency is about 70 kg/h. The method is especially important for shortening the whole material melting time, improving the material melting efficiency and improving the initial material melting efficiency.
In the current thermal field, in order to improve the pulling speed of the single crystal, a water-cooling screen is designed and installed in a single crystal furnace. The water-cooling screen is continuously communicated with cooling water, the whole water-cooling screen and the peripheral temperature of the water-cooling screen are integrally lower, and the water-cooling screen can quickly absorb the temperature in the single crystal furnace in the material melting process, so that the temperature in the single crystal furnace is lower under the same power condition, and the initial material charging efficiency is greatly influenced.
Disclosure of Invention
The embodiment of the invention provides a material melting device and a using method thereof, which at least solve the problem that excessive heat is taken away by a water cooling screen in the related technology.
According to one embodiment of the invention, the material melting device comprises a crucible, a water-cooling screen arranged above the crucible, and a heat insulation mechanism, wherein the heat insulation mechanism comprises a heat insulation plate, the heat insulation plate is arranged between the crucible and the water-cooling screen, and the heat insulation plate is used for blocking heat convection between the crucible and the water-cooling screen.
Further, the material melting device further comprises a lifting mechanism, the lifting mechanism comprises a chuck, the heat insulation mechanism further comprises a heat insulation plate, a connecting rod and a connector, the heat insulation plate and the connector are respectively arranged at two ends of the connecting rod, and the connector is connected to the chuck.
Further, the connector is provided with an internal thread, and the internal thread is matched with the external thread of the chuck.
Furthermore, the heat insulating plate is circular, the water-cooling screen comprises a lower opening which is close to one end of the crucible, the lower opening is annular, and the diameter of the heat insulating plate is 20-30 mm smaller than the inner diameter of the lower opening of the water-cooling screen.
Further, the heat insulation mechanism further comprises a screw plug, the screw plug is fixed at one end of the connecting rod, and the heat insulation plate is detachably connected to the screw plug.
According to another embodiment of the invention, a use method of the material melting device is provided, which comprises the following steps:
s1, filling silicon materials into the crucible;
s2, vacuumizing, pressurizing and heating the material melting device to melt the materials;
s3, arranging a heat insulation plate of a heat insulation mechanism between the crucible and the water-cooling screen to block heat convection between the crucible and the water-cooling screen;
s4, taking out the heat insulation plate after the material melting is finished;
and S5, continuously filling the silicon material into the crucible.
Further, in S3, the heat insulating plate is connected to the connecting rod, the connecting rod is connected to the connector, the connector is mounted to the chuck of the pulling mechanism, and the heat insulating plate is moved by the pulling mechanism so as to be located between the crucible and the water-cooled screen.
Has the advantages that:
when the material melting device is used for primarily charging materials, the heat insulation plate is arranged between the crucible and the water-cooling screen, so that the heat insulation plate can prevent the convection of low temperature in the water-cooling screen and high temperature near the crucible, the heat in the crucible taken away by the water-cooling screen is greatly reduced, and the primarily charging efficiency of the material melting device is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic cross-sectional view of a material melting apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic sectional view of a heat insulation mechanism of the material melting apparatus shown in FIG. 1.
The names of the parts represented by numbers or letters in the drawings are as follows:
100. a material melting device; 10. a crucible; 30. a water-cooled screen; 50. a heat insulation mechanism; 52. a heat insulation plate; 54. a connecting rod; 56. a connector; 58. a plug screw; 70. a lifting mechanism; 71. and (4) a clamping head.
Detailed Description
The invention will be described in detail hereinafter with reference to the accompanying drawings in conjunction with embodiments. It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
Referring to fig. 1 and fig. 2, an embodiment of the invention provides a material melting apparatus 100. The material melting device 100 comprises a crucible 10, a water screen 30 and a heat insulation mechanism 50. The water screen 30 is provided above the crucible 10. The insulation mechanism 50 includes insulation panels 52. The heat shield 52 is disposed between the crucible 10 and the water screen 30. The heat shield 52 serves to block heat convection between the crucible 10 and the water shield 30.
The crucible 10 and the water screen 30 may be of an industry-wide design and will not be described in detail herein.
The melting device 100 further comprises a lifting mechanism 70. The pulling mechanism 70 includes a collet 71. The heat insulation mechanism 50 includes a heat insulation plate 52, a connecting rod 54 and a connecting head 56. The heat insulation plate 52 and the connector 56 are respectively disposed at two ends of the connecting rod 54. The connector 56 is connected to the collet 70. The lifting mechanism 70 can control the heat insulation mechanism 50 to be lifted up and down so that the heat insulation plate 52 is positioned between the crucible 10 and the water screen 30.
In at least one embodiment, the connector 56 is provided with internal threads that mate with external threads of the collet 70.
In at least one embodiment, the heat shield 52 is circular and the water screen 30 includes a lower opening near one end of the crucible, the lower opening being annular. The diameter of the heat insulation plate 52 is 20 to 30 millimeters smaller than the inner diameter of the lower opening of the water-cooling screen. Too large a heat shield 52 tends to block the passage of gases during pressurization, and too small a heat shield 52 can impair the ability to block thermal convection between the crucible 10 and the water screen 30.
In at least one embodiment, the heat shield mechanism 50 further includes a plug screw 58, the plug screw 58 is fixed to one end of the connecting rod 54, and the heat shield plate 52 is detachably connected to the plug screw 58. It is understood that the heat shield 52 and the plug screw 58 may be connected by a screw or a snap fit.
The heat insulation mechanism 50 is made of a material with a small thermal field conductivity coefficient, such as a carbon-carbon composite material, which can withstand a high temperature of 1450 ℃ or higher during use, and does not deform, drop slag or pollute the silicon material at the high temperature.
Another embodiment of the present invention provides a method for using a material melting device 100, including:
s1, filling the crucible 10 with silicon material.
S2, vacuumizing, pressurizing and heating the material melting device 100 to melt the materials.
S3, installing the heat insulation plate 52 of the heat insulation mechanism 50 between the crucible 10 and the water screen 30 to block the heat convection between the crucible 10 and the water screen 30.
In this step, the heat shield 52 is attached to the link 54, and the link 54 is attached to the connector 56. The connecting head 56 is mounted to the chuck 71 of the pulling mechanism 70, and the heat insulating plate 52 is moved by the pulling mechanism 70 so that the heat insulating plate 52 is positioned between the crucible 10 and the water screen 30.
And S4, taking out the heat insulation plate 52 after the material melting is finished.
S5, continuously filling the crucible 10 with silicon material. When the material melting device 100 enters the material melting process after evacuation and pressurization, the heat insulation mechanism 50 can be fixed on the chuck 70, otherwise, because the heat insulation mechanism 50 is light in weight, the gas change in the furnace cavity can cause the heat insulation mechanism 50 to shake in the crucible during evacuation and pressurization, thereby causing a dropping accident.
As a concrete use scenario illustrates, in a 32-inch thermal field, the initial charging weight is about 350kg, the initial charging efficiency is 50kg/h, and the total time of initial charging (charging when a small amount of solid is needed in a crucible) is about 6.5 h. By using the heat insulation mechanism 50, under the condition of the same power and the same initial charging material weight, the initial charging material efficiency is improved to 55kg/h, the time consumption is shortened to 5.8h, the initial charging material time is shortened to 0.7 h/furnace, and the initial charging material time is reduced by 10.77%.
The service life of a single crucible is calculated according to 300h, and the number of furnaces for initially charging materials per month of a single furnace is as follows: 30 (days) × 24 (h/day)/300 (oven/h) =2.4 ovens/month; with the use of the thermal isolation mechanism 50, a single furnace can save time: 2.4 (oven/month) × 0.7 (h/oven) =1.68 (h/month). According to the unit yield of 150 kg/day, the capacity of each furnace can be increased every month: 1.68 (h/month)/30 (days/month) × 150 (kg/day)/24 (h/day) =0.35 kg/day. By using the scheme of the heat insulation mechanism 50, the yield per unit can be improved by 0.35 kg/day. For example, 126 tons of crystal bars can be produced per year according to 1000 furnaces.
are only preferred embodiments of the present invention, it should be noted that, as will be apparent to those skilled in the art, numerous changes and modifications can be made without departing from the principles of the invention, and such changes and modifications are to be considered within the scope of the invention.
Claims (7)
1. The utility model provides a material melting device, includes the crucible and locates the water-cooling screen of crucible top, its characterized in that: the material melting device further comprises a heat insulation mechanism, the heat insulation mechanism comprises a heat insulation plate, the heat insulation plate is arranged between the crucible and the water-cooling screen, and the heat insulation plate is used for blocking heat convection between the crucible and the water-cooling screen.
2. The material melting device according to claim 1, characterized in that: the material melting device further comprises a lifting mechanism, the lifting mechanism comprises a chuck, the heat insulation mechanism further comprises a connecting rod and a connector, the heat insulation plate and the connector are respectively arranged at two ends of the connecting rod, and the connector is connected to the chuck.
3. The material melting device according to claim 2, characterized in that: the connector is provided with an internal thread, and the internal thread is matched with the external thread of the chuck.
4. The material melting device according to claim 2, characterized in that: the heat insulating plate is circular, the water-cooling screen comprises a lower opening which is close to one end of the crucible, the lower opening is annular, and the diameter of the heat insulating plate is 20-30 mm smaller than the inner diameter of the lower opening.
5. The material melting device according to claim 2, characterized in that: the heat insulation mechanism further comprises a screw plug, the screw plug is fixed at one end of the connecting rod, and the heat insulation plate is detachably connected to the screw plug.
6. A use method of the material melting device based on any one of claims 1-5 is characterized by comprising the following steps:
s1, filling silicon materials into the crucible;
s2, vacuumizing, pressurizing and heating the material melting device to melt the materials;
s3, arranging a heat insulation plate of a heat insulation mechanism between the crucible and the water-cooling screen to block heat convection between the crucible and the water-cooling screen;
s4, taking out the heat insulation plate after the material melting is finished;
and S5, continuously filling the silicon material into the crucible.
7. The use method of the melting device as claimed in claim 6, characterized in that: in S3, the heat insulation plate is connected to the connecting rod, the connecting rod is connected with the connector, the connector is arranged on a chuck of the lifting mechanism, and the heat insulation plate is moved by the lifting mechanism to be located between the crucible and the water-cooling screen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111214784.4A CN114150368B (en) | 2021-10-19 | 2021-10-19 | Material melting device and application method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111214784.4A CN114150368B (en) | 2021-10-19 | 2021-10-19 | Material melting device and application method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN114150368A true CN114150368A (en) | 2022-03-08 |
| CN114150368B CN114150368B (en) | 2024-02-20 |
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114808115A (en) * | 2022-04-28 | 2022-07-29 | 晶科能源股份有限公司 | Liquid gap measuring method and liquid gap testing device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004292288A (en) * | 2003-03-28 | 2004-10-21 | Sumitomo Mitsubishi Silicon Corp | Method for melting raw material for silicon single crystal |
| CN213327923U (en) * | 2020-08-20 | 2021-06-01 | 新疆晶科能源有限公司 | Water cooling screen structure of single crystal furnace |
-
2021
- 2021-10-19 CN CN202111214784.4A patent/CN114150368B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004292288A (en) * | 2003-03-28 | 2004-10-21 | Sumitomo Mitsubishi Silicon Corp | Method for melting raw material for silicon single crystal |
| CN213327923U (en) * | 2020-08-20 | 2021-06-01 | 新疆晶科能源有限公司 | Water cooling screen structure of single crystal furnace |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114808115A (en) * | 2022-04-28 | 2022-07-29 | 晶科能源股份有限公司 | Liquid gap measuring method and liquid gap testing device |
| CN114808115B (en) * | 2022-04-28 | 2023-08-15 | 晶科能源股份有限公司 | Liquid mouth distance measuring method and liquid mouth distance testing device |
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| Publication number | Publication date |
|---|---|
| CN114150368B (en) | 2024-02-20 |
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