CN114142329A - Narrow-linewidth ultraviolet laser - Google Patents
Narrow-linewidth ultraviolet laser Download PDFInfo
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Abstract
The laser oscillator comprises a pumping source and a laser oscillation structure, wherein the pumping source is used for providing pumping light for the laser oscillation structure, the laser oscillation structure comprises a crystal and a resonant cavity and is used for absorbing the pumping light and generating ultraviolet laser, the resonant cavity of the laser oscillation structure is an annular cavity structure, and a unidirectional annular laser oscillation light path is formed in the laser oscillation structure and is used for outputting narrow-linewidth ultraviolet laser; the wavelength of the narrow-linewidth ultraviolet laser is 261 nm. Compared with the prior art, the invention has the advantages that the volume of the ultraviolet laser is greatly reduced by the optimized structural design, and the miniaturization is realized; and the narrow-linewidth ultraviolet laser with shorter wavelength, namely the narrow-linewidth ultraviolet laser with the wavelength of 261nm, is more beneficial to energy concentration, improves the resolution ratio, and is suitable for popularization and application in the fields with high precision requirements such as fluorescence absorption, Raman spectroscopy, gene detection, biochemical engineering, space optical communication, medical treatment and the like.
Description
Technical Field
The invention relates to the technical field of laser, in particular to a narrow-linewidth ultraviolet laser.
Background
Ultraviolet laser is widely applied in the fields of biochemical engineering, communication, medical treatment and the like, and various modes for generating ultraviolet laser are available, such as an ultraviolet gas lamp, an ultraviolet Light Emitting Diode (LED), an ultraviolet laser and the like; the ultraviolet gas lamp is low in price and high in power, but is large in size, low in conversion efficiency, fragile and short in service life; the ultraviolet LED has the advantages of high response speed, low power consumption, small volume and mass, long service life and low power; the ultraviolet laser has high power, good beam quality, high resolution and good directivity, but the driving power has large size, low conversion efficiency and high price.
In the existing ultraviolet laser, an ultraviolet continuous wave laser light source is mainly an external cavity frequency doubling and sum frequency all-solid-state laser based on nonlinear optical frequency conversion, and compared with other ultraviolet lasers such as an excimer laser, an ion laser and a free electron laser which are designed in a non-solid state, large and complex in structure, high in power consumption and high in cost, the all-solid-state ultraviolet laser has the advantages of narrower spectral bandwidth, better beam quality, lower maintenance cost, higher efficiency, longer service life and higher stability, so that the all-solid-state ultraviolet laser is widely applied to different fields such as precision material processing, optical data storage and spectroscopy. However, the precision requirements of the all-solid-state uv laser in the fields of precision processing, optical storage, etc. are increasing day by day, and therefore, research and development of a more miniaturized all-solid-state uv laser are urgently needed to obtain a better application effect.
Disclosure of Invention
Technical problem to be solved
The invention aims to provide a narrow-linewidth ultraviolet laser, which is preferably a laser crystal capable of generating a preset waveband, is combined with an annular resonant cavity type, optimizes the structure, is more miniaturized, improves the output efficiency of the narrow-linewidth ultraviolet laser, enhances the stability, and is more suitable for being applied to the field with high requirements on volume, weight and precision.
(II) technical scheme
In order to solve the technical problem, the present invention provides a narrow linewidth ultraviolet laser, including a pump source and a laser oscillation structure, wherein the pump source is used for providing pump light for the laser oscillation structure; the laser oscillation structure comprises a crystal and a resonant cavity and is used for absorbing the pumping light and generating ultraviolet laser; the laser oscillation structure comprises a resonant cavity which is an annular cavity structure, and a unidirectional annular laser oscillation light path is formed in the laser oscillation structure and is used for outputting narrow-linewidth ultraviolet laser; the wavelength of the narrow-linewidth ultraviolet laser is 261 nm.
Further, in the narrow-linewidth ultraviolet laser of the present invention, the laser oscillation structure includes two groups of crystals, which are a first crystal and a second crystal; the first crystal is used for absorbing the pump light and generating fundamental laser; the second crystal is used for carrying out frequency conversion on the fundamental frequency laser and generating frequency doubling laser; the laser oscillation structure comprises two resonant cavities, namely a three-mirror annular cavity structure and a four-mirror annular cavity structure, and is used for forming a unidirectional annular laser oscillation light path and ensuring the output of narrow-linewidth ultraviolet laser; the two groups of pump sources are respectively a first pump source and a second pump source; the first pumping source and the second pumping source are respectively positioned at two sides of the laser oscillation structure; the first pump source and the second pump source respectively provide pump light for the first crystal.
Preferably, in the narrow-linewidth ultraviolet laser of the present invention, the three-mirror ring cavity structure further includes three groups of cavity mirrors, an F-P etalon, an isolation element, and an output mirror, where the three groups of cavity mirrors are a first cavity mirror, a second cavity mirror, and a third cavity mirror; the first crystal is arranged between the first cavity mirror and the second cavity mirror; the second crystal is arranged between the third cavity mirror and the output mirror; the output mirror is arranged between the second crystal and the second cavity mirror; the F-P etalon and the separation element are sequentially arranged between the first cavity mirror and the third cavity mirror.
Preferably, in the narrow-linewidth ultraviolet laser, the first crystal is disposed at a midpoint of a connecting line between the first cavity mirror and the second cavity mirror; the third cavity mirror is arranged on a perpendicular bisector of a connecting line of the first cavity mirror and the second cavity mirror.
Preferably, in the narrow-linewidth ultraviolet laser, the coating angles of the first cavity mirror and the second cavity mirror are the same; the coating angle of the third cavity mirror is set according to the following formula (1):
in the formula, theta1The coating angles of the first cavity mirror and the second cavity mirror are set; theta2Is the film plating angle of the third cavity mirror.
Preferably, in the narrow-linewidth ultraviolet laser of the present invention, the mutual distance between the first cavity mirror, the second cavity mirror and the third cavity mirror is set according to the following formula (2):
wherein L1 is the distance between the first and second cavity mirrors; l2 is the distance between the second cavity mirror and the third cavity mirror; l3 is the distance between the first cavity mirror and the third cavity mirror.
Preferably, in the narrow-linewidth ultraviolet laser of the present invention, the four-mirror ring cavity structure further includes four sets of cavity mirrors, an F-P etalon, an isolation element, and a polarization element, wherein the four sets of cavity mirrors are a first cavity mirror, a second cavity mirror, a third cavity mirror, and a fourth cavity mirror; the first crystal is arranged between the first cavity mirror and the second cavity mirror; the second crystal is arranged between the third cavity mirror and the fourth cavity mirror; the F-P etalon is arranged between the second cavity mirror and the third cavity mirror; the polarization element and the isolation element are sequentially arranged between the third cavity mirror and the second crystal.
Preferably, in the narrow-linewidth ultraviolet laser, the first crystal is disposed at a midpoint of a connecting line between the first cavity mirror and the second cavity mirror; the second crystal is arranged at the midpoint of a connecting line of the third cavity mirror and the fourth cavity mirror; the distance between the first cavity mirror and the fourth cavity mirror is equal to the distance between the second cavity mirror and the third cavity mirror.
Preferably, in the narrow-linewidth ultraviolet laser, the plating angles of the first cavity mirror, the second cavity mirror, the third cavity mirror and the fourth cavity mirror are the same.
Preferably, in the narrow-linewidth uv laser of the present invention, the mutual distances among the first cavity mirror, the second cavity mirror, the third cavity mirror and the fourth cavity mirror are set according to the following formula (3):
wherein L1 is the distance between the first and second cavity mirrors; l2 is the distance between the second cavity mirror and the third cavity mirror; l3 is the distance between the third and fourth cavity mirrors; l4 is the distance between the first and fourth cavity mirrors; theta is the coating angle of the first cavity mirror, the second cavity mirror, the third cavity mirror and the fourth cavity mirror.
Further, in the narrow-linewidth ultraviolet laser of the present invention, the pump source is a semiconductor laser, and the wavelength of the pump light is 444 ± 1 nm; the first crystal is any one of Pr, YLF crystal, Pr, LLF crystal and Pr, GdLiF crystal; the second crystal is any one of BBO crystal, CLBO crystal, PP-LBGO crystal, KABO crystal, KBBF crystal and RBBF crystal; the wavelength of the narrow-linewidth ultraviolet laser is any one of 261nm, 273nm, 302nm, 303.5nm, 320nm, 349nm and 360nm generated by combining the first crystal and the second crystal, and preferably, the wavelength is 261 nm.
Further, in the narrow-linewidth ultraviolet laser of the present invention, the ultraviolet laser is a single-frequency laser.
(III) advantageous effects
Compared with the prior art, the technical scheme provided by the invention has the advantages that the volume of the ultraviolet laser is greatly reduced by adopting the optimized laser crystal and the optimized structural design, and the miniaturization is realized; and the narrow-linewidth ultraviolet laser with shorter wavelength is provided, namely the ultraviolet laser with the wavelength of 261nm is more beneficial to energy concentration, the resolution ratio is improved, and the narrow-linewidth ultraviolet laser is suitable for popularization and application in the fields with high precision requirements such as fluorescence absorption, Raman spectroscopy, gene detection, biochemical engineering, space optical communication, medical treatment and the like.
Drawings
FIG. 1 is a schematic structural diagram of a narrow linewidth UV laser according to the present invention;
fig. 2 is a schematic structural diagram of a narrow-linewidth uv laser according to the present invention (ii);
fig. 3 is a schematic structural diagram (iii) of the narrow-linewidth uv laser of the present invention;
FIG. 4 is a schematic structural diagram of a beam shaping device of a narrow-linewidth UV laser according to the present invention;
fig. 5 is a schematic structural diagram (iv) of the narrow linewidth uv laser of the present invention;
fig. 6 is a schematic structural diagram (v) of a narrow linewidth uv laser of the present invention;
fig. 7 is a schematic structural diagram (six) of a narrow linewidth uv laser of the present invention;
fig. 8 is a schematic structural diagram (seven) of a narrow linewidth uv laser of the present invention;
fig. 9 is a schematic structural diagram (eight) of the narrow linewidth uv laser of the present invention;
fig. 10 is a schematic structural diagram (nine) of a narrow linewidth uv laser of the present invention;
fig. 11 is a schematic structural diagram (ten) of a narrow linewidth uv laser of the present invention;
fig. 12 is a schematic structural diagram (eleven) of a narrow linewidth uv laser of the present invention;
fig. 13 is a schematic structural diagram (twelve) of a narrow linewidth uv laser of the present invention;
fig. 14 is a schematic structural diagram of a narrow linewidth uv laser of the present invention (thirteen);
fig. 15 is a schematic structural diagram (fourteen) of a narrow-linewidth uv laser according to the present invention;
fig. 16 is a schematic structural diagram (fifteen) of a narrow-linewidth uv laser of the present invention;
fig. 17 is a schematic structural diagram (sixteen) of a narrow linewidth uv laser of the present invention;
fig. 18 is a schematic structural view (seventeen) of a narrow linewidth uv laser of the present invention;
fig. 19 is a schematic structural diagram (eighteen) of a narrow linewidth uv laser of the present invention;
fig. 20 is a schematic structural view (nineteenth) of a narrow linewidth uv laser according to the present invention;
fig. 21 is a schematic structural diagram of a narrow linewidth uv laser of the present invention (twenty);
FIG. 22 is a schematic diagram of the structure of a narrow linewidth UV laser of the present invention (twenty one);
fig. 23 is a schematic structural view (twenty-two) of a narrow-linewidth uv laser of the present invention;
fig. 24 is a schematic structural view (twenty-three) of a narrow-linewidth uv laser of the present invention;
fig. 25 is a schematic structural diagram (twenty-four) of a narrow-linewidth uv laser of the present invention.
Shown in the figure:
1-pump source, 101-first pump source, 101A-first pump source, 101B-first pump source, 102-second pump source, 102A-second pump source, 102B-second pump source;
2-beam shaping means, 201-first beam shaping means, 202-second beam shaping means;
3-half-wave plate, 301A-first a half-wave plate, 301B-first B half-wave plate, 302A-second a half-wave plate, 302B-second B half-wave plate;
4-polarizer, 401-first polarizer, 402-second polarizer;
5-laser oscillation structure, 501-first cavity mirror, 502-second cavity mirror, 503-third cavity mirror, 504-fourth cavity mirror, 505-output mirror, 506-first crystal, 507-second crystal, 508-F-P etalon, 509-polarization element, 510-isolation element, 51001-Faraday rotator, 51002-half-wave plate element;
6-beam focusing means, 601-first beam focusing means, 602-second beam focusing means;
7-beam collimating means, 701-first beam collimating means, 702-second beam collimating means.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present invention by illustrating examples of the present invention.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings. Well-known elements, circuits, and methods of use have not been described in detail so as not to unnecessarily obscure the present invention.
Example 1
As shown in fig. 1, the narrow linewidth ultraviolet laser of the present invention includes a pumping source 1 and a laser oscillation structure 5, wherein the pumping source 1 is configured to provide pumping light for the laser oscillation structure 5, the laser oscillation structure 5 includes a crystal (not shown) and a resonant cavity (not shown) configured to absorb the pumping light and generate ultraviolet laser, the resonant cavity of the laser oscillation structure 5 is a ring cavity structure, and a unidirectional ring laser oscillation optical path is formed in the laser oscillation structure 5 and configured to output the narrow linewidth ultraviolet laser.
When the ultraviolet laser of the present invention of the above embodiment is applied, the pump source 1 provides pump light for the laser oscillation structure 5, the laser oscillation structure 5 absorbs the pump light and then generates target ultraviolet laser, in the laser oscillation structure 5 having the ring cavity structure, the laser is transmitted along a single direction to form a single-direction ring laser oscillation light path, and finally the target narrow-linewidth ultraviolet laser is output.
In the above embodiment, to ensure efficient output of the target narrow-linewidth ultraviolet laser, the laser oscillation structure 5 includes two sets of crystals, which are a first crystal (not shown) and a second crystal (not shown), respectively, where the first crystal serves as a laser crystal, and is configured to absorb the pump light and generate fundamental laser light; the second crystal is used as a frequency doubling crystal and is used for carrying out nonlinear frequency conversion on the fundamental frequency laser to generate frequency doubling laser, namely target ultraviolet laser. Preferably, the first crystal is any one of Pr: YLF crystal, Pr: LLF crystal and Pr: GdLiF crystal, or other crystals with similar functions to Pr: YLF crystal; the second crystal is any one of BBO crystal, CLBO crystal, PP-LBGO crystal, KABO crystal, KBBF crystal and RBBF crystal, and can also be other crystals with similar functions to the BBO crystal. The wavelength of the fundamental laser is any one of 522nm, 546nm, 604nm, 607nm, 640nm, 698nm and 720nm, preferably the wavelength is 522 nm; the wavelength of the frequency-doubled laser, i.e., the target ultraviolet laser is any one of 261nm, 273nm, 302nm, 303.5nm, 320nm, 349nm and 360nm, and preferably, the wavelength is 261 nm. Specifically, in the laser oscillation structure with the ring cavity structure, fundamental laser light is transmitted along a single direction, so that a single-direction ring laser oscillation optical path is formed, and efficient generation and output of target ultraviolet laser light are guaranteed.
In the above embodiment, in order to ensure the efficiency and power of the target ultraviolet laser, the pump sources are continuous pump sources, as shown in fig. 2, preferably, there are two groups of pump sources, namely, a first pump source 101 and a second pump source 102; the first pump source 101 and the second pump source 102 are respectively located at two sides of the laser oscillation structure; the first pump source 101 and the second pump source 102 respectively provide pump light for the first crystal; therefore, through carrying out double-end pumping on the laser oscillation structure, guarantee is provided for improving the efficiency and the power of generating the target ultraviolet laser. Preferably, in order to ensure the short-wave target ultraviolet laser, the wavelength of the pump light is preferably 444 +/-1 nm; therefore, preferably, the first pump source 101 and the second pump source 102 are both semiconductor lasers, the semiconductor lasers are preferably 444 ± 1nm LD or 444 ± 1nm fiber coupled lasers, the 444 ± 1nm LD is a laser diode capable of emitting laser light with a wavelength of 444 ± 1nm, the power of the 444 ± 1nm LD is preferably 4W to 5W, the 444 ± 1nm fiber coupled laser is preferably a fiber coupled semiconductor laser capable of emitting laser light with a wavelength of 444 ± 1nm, and the average power of the 444 ± 1nm fiber coupled laser is preferably 20W to 60W; the device is favorable for reducing the cost, reducing the whole volume of the laser and improving the generation efficiency and the output power of the target ultraviolet laser.
Example 2
As shown in fig. 3, the basic structure configuration and basic application of the narrow-linewidth ultraviolet laser of the present invention are the same as those of embodiment 1, specifically, in order to obtain a target narrow-linewidth ultraviolet laser with high beam quality, when the pump source 1 does not include a coupling device, as shown in fig. 3, a beam shaping device 2 and a half-wave plate 3 are sequentially disposed between the pump source 1 and the laser oscillating structure 5, the number of the beam shaping device 2 and the half-wave plate 3 is the same as that of the pump sources 1, the beam shaping device 2 is disposed adjacent to the pump source 1, and the half-wave plate 3 is disposed adjacent to the laser oscillating structure 5. When the laser oscillator is applied specifically, the beam shaping device 2 is used for carrying out beam shaping on the pump light, and then the half-wave plate 3 is used for adjusting the shaped pump light, so that after the pump light is processed by combining the beam shaping device 2 and the half-wave plate 3, a light beam matched with a cavity mode of the laser oscillation structure 5 is formed and then enters the laser oscillation structure 5 for pumping, and therefore the pump light is utilized to the maximum extent to obtain target narrow-linewidth ultraviolet laser with high beam quality.
In the above embodiment, the half-wave plate 3 is a half-wave plate corresponding to the wavelength of the pump light, the wavelength of the pump light is preferably 444 ± 1nm, and the half-wave plate 3 is preferably a half-wave plate (@444 ± 1nm) for the laser light with the wavelength of 444 ± 1 nm; the polarization direction of the pump beam incident to the laser oscillation structure 5 can be efficiently adjusted, so that the pump beam is in the direction of the maximum absorption of the laser oscillation structure 5.
In the above embodiment, when the pump source 1 is 444 ± 1nmLD, as shown in fig. 4, the beam shaping device 2 preferably includes a cylindrical lens and a convex lens, wherein the cylindrical lens collimates the pump light, and the convex lens focuses the pump light collimated by the cylindrical lens to obtain a high-quality beam shaping effect.
In the above embodiment, preferably, as shown in fig. 5, when two sets of pump sources, namely, the first a pump source 101A and the second a pump source 102A, are provided based on double-ended pumping, two sets of the beam shaping device 2 and the half-wave plate 3 are provided, the two sets of the beam shaping device 2 are the first beam shaping device 201 and the second beam shaping device 202 respectively, the two sets of the half-wave plate 3 are the first a half-wave plate 301A and the second a half-wave plate 302A respectively, the first beam shaping device 201 is provided between the first a pump source 101A and the first a half-wave plate 301A, and the second beam shaping device 202 is provided between the second a pump source 102A and the second a half-wave plate 302A. In specific application, outside the laser oscillation structure, the pump light is simultaneously and respectively processed from two ends, wherein the pump light emitted by the first a pump source 101A is subjected to beam shaping through the first beam shaping device 201, and the pump light shaped by the first beam shaping device 201 is adjusted through the first a half-wave plate 301A; the second beam shaping device 202 is used for carrying out beam shaping on the pump light emitted by the second A pump source 102A, and the second A half-wave plate 302A is used for adjusting the pump light beam shaped by the second beam shaping device 202; therefore, after the two groups of beam shaping devices 2 and the two groups of half-wave plates 3 are respectively combined to synchronously and respectively process the pump light at two ends, light beams matched with a cavity mode of the laser oscillation structure 5 are formed, then the light beams synchronously enter the first crystal from two ends of the laser oscillation structure 5 respectively, and double-end pumping is carried out on the first crystal, so that the base frequency light with high beam quality can be obtained by utilizing the pump light to the maximum extent, further frequency doubling laser with high beam quality can be generated after nonlinear frequency conversion is carried out on the base frequency laser by the second crystal, and the target narrow-linewidth ultraviolet laser with high beam quality can be obtained.
Example 3
As shown in fig. 6, the basic structure configuration and basic application of the narrow-linewidth ultraviolet laser of the present invention are the same as those of embodiment 1, specifically, in order to obtain a target narrow-linewidth ultraviolet laser with high beam quality, when the pump source includes a coupling device, as shown in fig. 6, a beam collimating device 7, a polarizing plate 4, a half-wave plate 3, and a beam focusing device 6 are sequentially disposed between the pump source 1 and the laser oscillating structure 5, the number of the beam collimating device 7, the polarizing plate 4, the half-wave plate 3, and the beam focusing device 6 is the same as that of the pump source 1, the beam collimating device 7 is disposed adjacent to the pump source 1, and the beam focusing device 6 is disposed adjacent to the laser oscillating structure 5. When the laser oscillator is specifically applied, the pump light emitted by the pump source 1 is firstly collimated by the light beam collimating device 7, the collimated pump light is subjected to polarization beam splitting by the polarizing film 4, the polarization direction of the polarized light obtained after the polarization beam splitting is adjusted by the half-wave plate 3, and the polarized light after the polarization direction adjustment is focused by the light beam focusing device 6, so that the pump light is processed by combining the light beam collimating device 7, the polarizing film 4, the half-wave plate 3 and the light beam focusing device 6 to form a light beam matched with a cavity mode of the laser oscillation structure 5, and then enters the laser oscillation structure 5 for pumping, thereby being beneficial to obtaining the target narrow-linewidth ultraviolet laser with high beam quality by utilizing the pump light to the maximum extent.
In the above embodiment, the half-wave plate 3 is a half-wave plate corresponding to the wavelength of the pump light, the wavelength of the pump light is preferably 444 ± 1nm, and the half-wave plate 3 is preferably a half-wave plate (@444 ± 1nm) for the laser light with the wavelength of 444 ± 1 nm; the polarizing plate 4 is a polarizing plate corresponding to the wavelength of the pump light, the wavelength of the pump light is preferably 444 ± 1nm, and the polarizing plate 4 is preferably a polarizing plate (@444 ± 1nm) for a laser beam having a wavelength of 444 ± 1 nm; the polarization direction of the pump beam incident to the laser oscillation structure 5 can be efficiently adjusted, so that the pump beam is in the direction of the maximum absorption of the laser oscillation structure 5.
In the above embodiment, when the pump source 1 is a 444 ± 1nm fiber coupled laser, the beam collimator 7 is preferably a convex lens to obtain a high-quality beam shaping effect.
In the above embodiment, to ensure that a high-quality beam shaping effect is obtained, when the pump source 1 is an optical fiber coupled laser, preferably, a ratio of a diameter of a fiber core of the optical fiber to a diameter of a spot at a focus after shaping is preferably 2:1, 1:1, or 1:2, where the optical fiber is a coupling output optical fiber of the optical fiber coupled laser, and the spot is a focused spot of the pump light which is incident into the first crystal after being shaped by the beam collimating device 7, the polarizing plate 4, the half-wave plate 3, and the beam focusing device 6 in sequence.
In the above-described embodiment, preferably, as shown in fig. 7, when two sets of pump sources, i.e., the first B pump source 101B and the second B pump source 102B, two groups of beam collimation devices 7, two groups of polarizing plates 4, two groups of half-wave plates 3 and two groups of beam focusing devices 6 are arranged, the two sets of beam collimating means 7 are a first beam collimating means 701 and a second beam collimating means 702, the two sets of polarizers are a first polarizer 401 and a second polarizer 402, respectively, the two sets of half-wave plates are a first B half-wave plate 301B and a second B half-wave plate 302B, respectively, the two groups of beam focusing devices are respectively a first beam focusing device 601 and a second beam focusing device 602, the first beam collimating means 701 is disposed between the first B pump source 101B and the first polarizer 401, the second beam collimating device 702 is disposed between the second B pump source 102B and the second polarizer 402. In specific application, outside the laser oscillation structure 5, the pump light is simultaneously and respectively processed from two ends thereof, wherein the pump light emitted by the first B pump source 101B is subjected to beam collimation through the first beam collimation device 701, the pump light collimated by the first beam collimation device 701 is subjected to polarization beam splitting through the first polarizer 401, then the polarization direction of the polarized pump light obtained after polarization beam splitting through the first polarizer 401 is adjusted through the first B half-wave plate 301B, and finally the pump light subjected to polarization direction adjustment through the first half-wave plate 301B is focused through the first beam focusing device 601; the pump light emitted by the second B pump source 102B is collimated by the second beam collimating device 702, the pump light collimated by the second beam collimating device 702 is subjected to polarization beam splitting by the second polarizer 402, then the polarization direction of the polarized pump light obtained after the polarization beam splitting by the second polarizer 402 is adjusted by the second B half-wave plate 302B, and finally the pump light subjected to the polarization direction adjustment by the second B half-wave plate 302B is focused by the second beam focusing device 602; thus, the pump light with the maximum absorption polarization direction consistent with that of the first crystal is obtained at the two ends of the laser oscillation structure 5 through the processing, and then synchronously enters the first crystal from the two ends of the laser oscillation structure 5, so as to perform double-end pumping on the first crystal; therefore, the arrangement ensures that the pump light is efficiently utilized at a high utilization rate, so that the pump light is favorably utilized to the maximum extent to obtain the fundamental frequency light with high beam quality, and further the second crystal is favorably used for generating the frequency doubling laser with high beam quality after carrying out nonlinear frequency conversion on the fundamental frequency laser, namely the target narrow-linewidth ultraviolet laser with high beam quality is obtained.
Example 4
As shown in fig. 8 to 13, the basic structural configuration and basic application of the narrow-linewidth ultraviolet laser of the present invention are the same as those in embodiment 1, embodiment 2, or embodiment 3, in order to obtain a target narrow-linewidth ultraviolet laser with high efficiency, specifically, the resonant cavity included in the laser oscillation structure 5 is a three-mirror ring cavity structure, and includes a cavity mirror, an F-P etalon 508, an isolation element 510, and an output mirror 505, where there are three groups of cavity mirrors, which are a first cavity mirror 501, a second cavity mirror 502, and a third cavity mirror 503; the first crystal 506 is arranged between the first cavity mirror 501 and the second cavity mirror 502; the second crystal 507 is disposed between the third mirror 503 and the output mirror 505; the output mirror 505 is disposed between the second crystal 507 and the second cavity mirror 502; the F-P etalon 508 and the separation element 510 are arranged in sequence between the first cavity mirror 501 and the third cavity mirror 503.
In the above embodiment, in order to obtain the target narrow-linewidth ultraviolet laser more efficiently, preferably, the first crystal 506 is disposed at a midpoint of a line connecting the first cavity mirror 501 and the second cavity mirror 502; the third cavity mirror 503 is arranged on a perpendicular bisector of a connecting line of the first cavity mirror 501 and the second cavity mirror 502.
In the above embodiment, in order to ensure that the target narrow-linewidth ultraviolet laser with high beam quality is obtained, preferably, the coating angles of the first cavity mirror 501 and the second cavity mirror 502 are the same; the plating angle of the third cavity mirror 503 is set according to the following formula (1):
in the formula, theta1The coating angles of the first cavity mirror 501 and the second cavity mirror 502 are shown; theta2Is the plating angle of the third cavity mirror 503. More preferably, the mutual distance among the first cavity mirror 501, the second cavity mirror 502 and the third cavity mirror 503 is set according to the following formula (2):
wherein L1 is the distance between the first cavity mirror 501 and the second cavity mirror 502; l2 is the distance between the second mirror 502 and the third mirror 503; l3 is the distance between the first cavity mirror 501 and the third cavity mirror 503; theta1Is the coating angle of the first cavity mirror 501 and the second cavity mirror 502.
In the above embodiment, the wavelength of the target narrow linewidth ultraviolet laser is preferably 261 nm. The first cavity mirror 501 and the second cavity mirror 502 are used for anti-reflection of pump light and high reflection of fundamental laser. In order to efficiently obtain target narrow-linewidth ultraviolet laser, preferably, the first cavity mirror 501 and the second cavity mirror 502 are both dichroic mirrors, and are both plated with dichroic films; the first cavity mirror 501 and the second cavity mirror 502 are both plated with an antireflection film for pump light and a high-reflection film for fundamental laser. Preferably, the plating angles of the first cavity mirror 501 and the second cavity mirror 502 are both 17 °, and both the first cavity mirror 501 and the second cavity mirror 502 are plated with a 17 ° 444nm antireflection film and a 17 ° 522nm high-reflection film, wherein the reflectivity of the 17 ° 522nm high-reflection film is preferably 99.8% or more, the transmittance of the 17 ° 444nm antireflection film is preferably 95% or more, and particularly, the transmittance is preferably 99.5% or more; therefore, the anti-reflection performance of the first cavity mirror 501 and the second cavity mirror 502 for the pump light with the wavelength of 444 +/-1 nm and the high reflection performance for the fundamental laser with the wavelength of 522nm are achieved, and the incident angle and the reflection angle of the pump light with the wavelength of 444 +/-1 nm and the incident angle and the reflection angle of the fundamental laser with the wavelength of 522nm are both 17 degrees on the first cavity mirror 501 and the second cavity mirror 502. In the above embodiment, the third cavity mirror 503 is configured to perform polarization selection on the fundamental laser, and perform anti-reflection and high reflection on the polarized fundamental laser respectively. In order to obtain the target narrow-linewidth ultraviolet laser efficiently, preferably, the third cavity mirror 503 is a polarizer for fundamental laser; the third cavity mirror 503 is plated with a high reflection film and an antireflection film. Preferably, the third cavity mirror 503 is a polarizing plate for fundamental laser light with a wavelength of 522nm, more preferably, the plating angle of the third cavity mirror 503 is 55.6 °, the third cavity mirror 503 is plated with a 55.6 ° 522nm S polarized light high reflection film and a 55.6 ° 522nm P polarized light antireflection film, wherein the reflectivity of the 55.6 ° 522nm S polarized light high reflection film is preferably 99.8% or more, and the transmittance of the 55.6 ° 522nm P polarized light antireflection film is preferably 95% or more, and particularly, the transmittance is preferably 99.5% or more; thereby, the third cavity mirror 503 is realized to be highly reflective to the S-polarized light having the wavelength of 522nm and anti-reflective to the P-polarized light having the wavelength of 522nm, and the incident angle and the reflection angle of the S-polarized light having the wavelength of 522nm and the P-polarized light having the wavelength of 522nm are both 55.6 ° in the third cavity mirror 503.
In the above embodiment, the output mirror 505 is used to perform anti-reflection on the fundamental laser, perform high reflection on the frequency-doubled laser, and output the target narrow linewidth ultraviolet laser. In order to obtain the target narrow-linewidth ultraviolet laser efficiently, the output mirror 505 is preferably a dichroic mirror coated with a dichroic mold. Preferably, the output mirror 505 is coated with an antireflection film for fundamental laser and a high reflection film for frequency doubled laser; more preferably, the coating angle of the output mirror 505 is 45 °, the output mirror 505 is coated with a 45 ° 522nm antireflection film and a 45 ° 261nm high reflection film, wherein the transmittance of the 45 ° 522nm antireflection film is preferably 95% or more, particularly the transmittance is preferably 99.5% or more, and the reflectance of the 45 ° 261nm high reflection film is preferably 99.8% or more; therefore, the output mirror 505 can realize the anti-reflection of the fundamental frequency laser with the wavelength of 522nm and the high reflection of the frequency doubling laser with the wavelength of 261nm, and the incidence angles and the reflection angles of the fundamental frequency laser with the wavelength of 522nm and the frequency doubling laser with the wavelength of 261nm are both 45 degrees on the output mirror 505, so that the frequency doubling laser, namely the target narrow-linewidth ultraviolet laser with the wavelength of 261nm, is coupled and output through the output mirror 505.
In the above embodiment, the isolation element 510 is used to isolate a part of the fundamental laser light, wherein the operation direction of the isolated fundamental laser light is opposite to the operation direction of the ring laser oscillation optical path in the laser oscillation structure 5. In order to obtain the target narrow linewidth ultraviolet laser light efficiently, preferably, the separation element 510 includes a faraday rotator 51001 and a half-wave plate element 51002, wherein the faraday rotator 51001 is disposed between the F-P etalon 508 and the half-wave plate element 51002, and the half-wave plate element 51002 is disposed between the faraday rotator 51001 and the third cavity mirror 503; the isolation element 510 is an optical isolator for fundamental laser light, preferably an optical isolator for fundamental laser light with a wavelength of 522 nm; preferably, the isolation element 510 includes a faraday rotator 51001 for fundamental laser light having a wavelength of 522nm and a half-wave plate element 51002 for fundamental laser light having a wavelength of 522nm, the faraday rotator 51001 for fundamental laser light having a wavelength of 522nm being a faraday rotator (@522nm), and the half-wave plate element 51002 for fundamental laser light having a wavelength of 522nm being a half-wave plate (@522 nm). Preferably, the faraday rotator 51001, the half-wave plate element 51002 and the third cavity mirror 503 formed by a polarizing plate work together to ensure that unidirectional transmission of laser is realized in the laser oscillation structure 5, that is, in the laser oscillation structure 5 having the ring cavity structure, the laser in the direction opposite to the running direction of the ring laser oscillation light path is prevented from forming the ring oscillation light path, so that unidirectional transmission of the laser is realized, and further, the target narrow linewidth ultraviolet laser with high beam quality is obtained. Specifically, in the above-described embodiment, the running direction of the ring-shaped laser oscillation optical path in the laser oscillation structure 5 is counterclockwise, and the laser light running in the clockwise direction is prevented from forming the ring-shaped oscillation optical path by the combined action of the separation element 510 and the third cavity mirror 503.
In the above embodiment, the F-P etalon 508 is a fabry-perot (F-P) etalon, and is configured to narrow a line width of the fundamental laser to form a fundamental laser with high beam quality, thereby facilitating formation of a frequency-doubled laser with high beam quality.
In the above embodiment, in order to more efficiently match the pump beam with the cavity mode of the laser oscillation structure 5, the laser oscillation structure 5 is set according to specific conditions, preferably by adjusting the specification of the cavity mirrors and the distance between the cavity mirrors; preferably, the first cavity mirror 501 and the second cavity mirror 502 are both plano-concave lenses, the third cavity mirror 503 is a plane mirror, the curvature of the first cavity mirror 501 is preferably-150 to-300 mm, the curvature of the second cavity mirror 502 is preferably-200 to-600 mm, the distance between the first cavity mirror 501 and the second cavity mirror 502 is preferably 50 to 150mm, and the first crystal 506 is arranged at the midpoint of the connecting line of the first cavity mirror 501 and the second cavity mirror 502. Furthermore, the second crystal 507 is preferably disposed near the beam waist of the third cavity mirror 503 to improve the frequency doubling efficiency.
When the narrow-linewidth ultraviolet laser of the embodiment of the present invention is applied, the application is basically the same as embodiments 1 to 3, and specifically, the method further includes: as shown in fig. 8 to 13, a pumping light beam formed outside the laser oscillation structure 5 is reflected by the first cavity mirror 501 and/or the second cavity mirror 502 and enters the laser oscillation structure 5, and the first crystal 506 is pumped by a single end (as shown in fig. 8, 10 and 12) or a double end (as shown in fig. 9, 11 and 13), wherein the double end pumping is preferred, that is: as shown in fig. 9, 11 and 13, the pumping light beam is simultaneously reflected by the first cavity mirror 501 and the second cavity mirror 502 and enters the laser oscillating structure 5 to perform double-end pumping on the first crystal 506; the pump light is absorbed by the first crystal 506 and fundamental laser light is generated; the generated fundamental laser is highly reflected by a first cavity mirror 501 and a second cavity mirror 502 respectively, wherein the fundamental laser which runs anticlockwise is generated by a first crystal 506, then is reflected by the first cavity mirror 501, is sequentially narrowed in line width by an F-P etalon 508, keeps the polarization state unchanged after being acted by an isolation element 510, and enters a second crystal 507 after being reflected by a third cavity mirror 503; then, the second crystal 507 performs nonlinear frequency conversion on the fundamental laser and generates frequency-doubled laser, namely target narrow-linewidth ultraviolet laser; and finally, the frequency-doubled laser is subjected to high-reflection output through an output mirror 505, namely, target narrow-linewidth ultraviolet laser with the wavelength of 261nm is output.
In the application process, the wavelength of the pump light is 444 +/-1 nm, the wavelength of the frequency doubling laser, namely the target ultraviolet laser is 261nm, and the wavelength of the fundamental frequency laser is 522 nm; the first crystal 506 is any one of Pr: YLF crystal, Pr: LLF crystal and Pr: GdLiF crystal; the second crystal 507 is any one of BBO crystal, CLBO crystal, PP-LBGO crystal, KABO crystal, KBBF crystal and RBBF crystal; in the laser oscillation structure 5 having the ring cavity structure, a ring laser oscillation optical path is formed, the operation direction of the ring laser oscillation optical path is counterclockwise, that is, the fundamental frequency laser in the application process oscillates along the counterclockwise direction in the ring optical path, and the frequency-doubled laser generated after passing through the second crystal 507 is output through the output mirror 505, thereby effectively ensuring efficient generation and output of the target narrow-linewidth ultraviolet laser, that is, the narrow-linewidth ultraviolet laser with the wavelength of 261 nm.
In the application process, in the laser oscillation structure 5, the separation element 510 and the third cavity mirror 503 are combined to prevent the laser running clockwise from continuing oscillation transmission, so that a ring-shaped laser oscillation light path running counterclockwise is guaranteed; specifically, the process of the separation element 510 and the third cavity mirror 503 for stopping the clockwise running fundamental laser is as follows: the polarization plate is provided based on the third cavity mirror 503, and the isolation member 510 includes a faraday rotator 51001 and a half-wave plate member 51002, and after the fundamental laser light of the S polarization state generated by the first crystal 506 is reflected by the second cavity mirror 502, then highly reflected by the third cavity mirror 503, the reflected S polarized light is sequentially rotated by the half-wave plate element 51002 and the faraday rotator 51001 to be changed into P polarized light, the formed P polarized light is transmitted clockwise and finally is transmitted out by the third cavity mirror 503, thereby realizing the increase of the intracavity loss of the laser running clockwise, inhibiting the clockwise running of the laser, thereby providing guarantee for realizing the anticlockwise unidirectional oscillation operation of the laser in the cavity, namely forming an anticlockwise ring laser oscillation optical path, and further effectively inhibiting the spatial hole burning effect to ensure the efficient generation and output of the target narrow-linewidth ultraviolet laser, namely the narrow-linewidth ultraviolet laser with the wavelength of 261 nm.
Example 5
As shown in fig. 14 to 19, the basic structural configuration and basic application of the narrow-linewidth ultraviolet laser of the present invention are the same as those in embodiment 1, embodiment 2, or embodiment 3, in order to obtain a target narrow-linewidth ultraviolet laser with high efficiency, specifically, the resonant cavity included in the laser oscillation structure 5 is a four-mirror annular cavity structure including a cavity mirror, an F-P etalon 508, an isolation element 510, and a polarization element 509, where there are four groups of cavity mirrors, which are a first cavity mirror 501, a second cavity mirror 502, a third cavity mirror 503, and a fourth cavity mirror 504, respectively; the first crystal 506 is arranged between the first cavity mirror 501 and the second cavity mirror 502; the second crystal 507 is disposed between the third cavity mirror 503 and the fourth cavity mirror 504; the F-P etalon 508 is disposed between the second mirror 502 and the third mirror 503; the polarizing element 509 and the separating element 510 are in turn arranged between the third mirror 503 and the second crystal 507.
In the above embodiment, in order to obtain the target narrow linewidth uv laser with high beam quality more efficiently, preferably, the first crystal 506 is disposed at the midpoint of the line connecting the first mirror 501 and the second mirror 502, the second crystal 507 is disposed at the midpoint of the line connecting the third mirror 503 and the fourth mirror 504, and the distance between the first mirror 501 and the fourth mirror 504 is equal to the distance between the second mirror 502 and the third mirror 503; preferably, the coating angles of the first cavity mirror 501, the second cavity mirror 502, the third cavity mirror 503 and the fourth cavity mirror 504 are the same; preferably, the mutual distances among the first cavity mirror 501, the second cavity mirror 502, the third cavity mirror 503 and the fourth cavity mirror 504 are set according to the following formula (3):
wherein L1 is the distance between the first cavity mirror 501 and the second cavity mirror 502; l2 is the distance between the second mirror 502 and the third mirror 503; l3 is the distance between the third mirror 503 and the fourth mirror 504; l4 is the distance between the first cavity mirror 501 and the fourth cavity mirror 504; theta is the coating angle of the first cavity mirror 501, the second cavity mirror 502, the third cavity mirror 503 and the fourth cavity mirror 504.
In the above embodiment, the first cavity mirror 501 and the second cavity mirror 502 are used for antireflection of the pump light and high reflection of the fundamental laser light. In order to efficiently obtain target narrow-linewidth ultraviolet laser, preferably, the first cavity mirror 501 and the second cavity mirror 502 are both dichroic mirrors, and are both plated with dichroic dies; the first cavity mirror 501 and the second cavity mirror 502 are both plated with an antireflection film for pump light and a high-reflection film for fundamental laser. Preferably, the plating angles of the first cavity mirror 501 and the second cavity mirror 502 are both 10 °, the first cavity mirror 501 and the second cavity mirror 502 are both plated with a 10 ° 444 ± 1nm antireflection film and a 10 ° 522nm high reflection film, the transmittance of the 10 ° 444 ± 1nm antireflection film is preferably 99.5% or more, and the reflectance of the 10 ° 522nm high reflection film is preferably 99.8% or more, so that the antireflection of the first cavity mirror 501 and the second cavity mirror 502 for the pump light with the wavelength of 444 ± 1nm and the high reflection for the fundamental laser with the wavelength of 522nm are realized, and the incident angle and the reflection angle of the pump light with the wavelength of 444 ± 1nm and the fundamental laser with the wavelength of 522nm on the first cavity mirror 501 and the second cavity mirror 502 are both 10 °.
In the above embodiment, the third cavity mirror 503 is used for highly reflecting the fundamental laser light. In order to obtain the target narrow linewidth uv laser with high efficiency, the third cavity mirror 503 is preferably coated with a high reflective film. Preferably, the plating angles of the third cavity mirror 503 are both 10 °, the third cavity mirror 503 is plated with a 10 ° 522nm high reflection film, and the reflectivity of the 10 ° 522nm high reflection film is preferably 99.8% or more, so that the third cavity mirror 503 can perform high reflection on the fundamental laser with the wavelength of 522nm, and the incident angle and the reflection angle of the fundamental laser with the wavelength of 522nm on the third cavity mirror 503 are both 10 °.
In the above embodiment, the fourth cavity mirror 504 is used for highly reflecting the fundamental laser, antireflection the frequency-doubled laser, and outputting the target narrow-linewidth ultraviolet laser. In order to obtain the target narrow-linewidth ultraviolet laser efficiently, the fourth cavity mirror 504 is preferably a dichroic mirror coated with a dichroic mold. Preferably, the fourth cavity mirror 504 is plated with a high reflection film for fundamental laser and an antireflection film for frequency doubled laser; more preferably, the coating angle of the fourth cavity mirror 504 is 10 °, and the fourth cavity mirror 504 is coated with a 10 ° 522nm high-reflection film, wherein the reflectivity of the 10 ° 522nm high-reflection film is preferably 99.8% or more, the transmittance of the 10 ° 261nm anti-reflection film is preferably 95% or more, and particularly, the transmittance is preferably 99.5% or more; therefore, the fourth cavity mirror 504 can realize high reflection of the fundamental frequency laser with the wavelength of 522nm and anti-reflection of the frequency doubling laser with the wavelength of 261nm, and the incident angles and the reflection angles of the fundamental frequency laser with the wavelength of 522nm and the frequency doubling laser with the wavelength of 261nm on the fourth cavity mirror 504 are both 10 degrees, so that the frequency doubling laser, namely the target narrow-linewidth ultraviolet laser with the wavelength of 261nm, is efficiently output through the fourth cavity mirror 504.
In the above embodiment, the F-P etalon 508 is a fabry-perot (F-P) etalon, and is configured to narrow the line width of the fundamental laser to form a narrow-line fundamental laser, thereby facilitating the formation of a narrow-line frequency-doubled laser, and further facilitating the formation of a single-frequency target narrow-line ultraviolet laser.
In the above embodiment, the isolation element 510 is used to isolate a part of the fundamental laser light, wherein the operation direction of the isolated fundamental laser light is opposite to the operation direction of the ring laser oscillation optical path in the laser oscillation structure 5. In order to obtain the target narrow linewidth ultraviolet laser light efficiently, it is preferable that the isolation element 510 includes a faraday rotator 51001 and a half-wave plate element 51002, wherein the faraday rotator 51001 is disposed between the polarizing element 509 and the half-wave plate element 51002, and the half-wave plate element 51002 is disposed between the faraday rotator and the second crystal 507; the isolation element 510 is an optical isolator for fundamental laser light, preferably an optical isolator for fundamental laser light with a wavelength of 522 nm; preferably, the isolation element 510 includes a faraday rotator 51001 for fundamental laser light having a wavelength of 522nm and a half-wave plate element 51002 for fundamental laser light having a wavelength of 522nm, the faraday rotator 51001 for fundamental laser light having a wavelength of 522nm being a faraday rotator (@522nm), and the half-wave plate element 51002 for fundamental laser light having a wavelength of 522nm being a half-wave plate (@522 nm).
In the above embodiment, the polarizing element 509 is a polarizer, and the polarizing element 509 and the isolating element 510 function together to ensure that unidirectional transmission of laser light is realized in the laser oscillation structure 5, that is, in the laser oscillation structure 5 having the ring cavity structure, laser light in a direction opposite to the allowed running direction of the ring laser oscillation light path is prevented from forming the ring oscillation light path, so that unidirectional transmission of laser light is realized, and further, single-frequency target narrow-linewidth ultraviolet laser light is favorably obtained.
In the above embodiment, in order to more efficiently match the pump beam with the cavity mode of the laser oscillation structure 5, the laser oscillation structure 5 is set according to a specific working condition, preferably by setting the specifications of the cavity mirrors and adjusting the distance between the cavity mirrors; preferably, the first cavity mirror 501 and the second cavity mirror 502 are plane mirrors, the distance between the first cavity mirror 501 and the second cavity mirror 502 is preferably 50-150 mm, and the first crystal 506 is arranged at the midpoint of the connecting line of the first cavity mirror 501 and the second cavity mirror 502. In addition, the third cavity mirror 503 and the fourth cavity mirror 504 are preferably concave mirrors, the curvatures of the third cavity mirror 503 and the fourth cavity mirror 504 are preferably-100 mm, the distance between the third cavity mirror 503 and the fourth cavity mirror 504 is preferably 100-110 mm, and the second crystal 507 is preferably arranged at the midpoint of the connecting line of the third cavity mirror 503 and the fourth cavity mirror 504, so that the second crystal 507 is located at the beam waist position between the third cavity mirror 503 and the fourth cavity mirror 504 in the laser oscillation structure 5, and the frequency doubling efficiency is favorably improved.
When the narrow-linewidth ultraviolet laser of the embodiment of the present invention is applied, the application is basically the same as embodiments 1 to 3, and specifically, the method further includes: as shown in fig. 14 to 19, the pump light beam formed outside the laser oscillation structure 5 is reflected back into the laser oscillation structure 5 through the first cavity mirror 501 and/or the second cavity mirror 502, and is pumped to the first crystal 506 at a single end (as shown in fig. 14, 16, and 18) or at two ends (as shown in fig. 15, 17, and 19), wherein the pumping at two ends is preferred, that is: as shown in fig. 15, 17 and 19, the pumping light beam is simultaneously reflected by the first cavity mirror 501 and the second cavity mirror 502 and enters the laser oscillating structure 5 to perform double-end pumping on the first crystal 506; the pump light is absorbed by the first crystal 506 and fundamental laser light is generated; the generated fundamental laser is highly reflected by a first cavity mirror 501 and a second cavity mirror 502 respectively, wherein the fundamental laser reflected by the first cavity mirror 501 is highly reflected by a fourth cavity mirror 504 and then enters a second crystal 507, and the fundamental laser reflected by the second cavity mirror 502 sequentially passes through an F-P etalon 508 to narrow the line width, is highly reflected by the third cavity mirror 503, and then enters the second crystal 507 after the combined action of a polarization element 509 and an isolation element 510; then the second crystal 507 absorbs the fundamental laser and generates frequency-doubled laser, namely the target narrow-linewidth ultraviolet laser; and finally, performing antireflection and output on the frequency-doubled laser through a fourth cavity mirror 504, namely outputting target narrow-linewidth ultraviolet laser with the wavelength of 261 nm.
In the application process, the wavelength of the pump light is 444 +/-1 nm, the wavelength of the frequency doubling laser, namely the target ultraviolet laser is 261nm, and the wavelength of the fundamental frequency laser is 522 nm; the first crystal 506 is any one of Pr: YLF crystal, Pr: LLF crystal and Pr: GdLiF crystal; the second crystal 507 is any one of BBO crystal, CLBO crystal, PP-LBGO crystal, KABO crystal, KBBF crystal and RBBF crystal; in the laser oscillation structure 5 with the ring cavity structure, a unidirectional ring laser oscillation optical path is formed, that is, the fundamental frequency laser in the application process oscillates unidirectionally along the ring optical path, and frequency-doubled laser is generated by the second crystal and output by the output mirror, thereby effectively ensuring efficient generation and output of the target narrow-linewidth ultraviolet laser, that is, the narrow-linewidth ultraviolet laser with the wavelength of 261 nm.
In the above application process, in the laser oscillation structure 5, the direction of transmitting the laser from the third cavity mirror 503 to the fourth cavity mirror 504 is taken as the forward direction, the direction of transmitting the laser from the fourth cavity mirror 504 to the third cavity mirror 503 is taken as the reverse direction, and in order to form a ring-shaped laser oscillation optical path which runs in a single direction, the separation element 510 and the polarization element 509 are combined to prevent the laser running in the reverse direction from continuing oscillation transmission; specifically, the blocking action of the isolation element 510 and the polarization element 509 on the laser light running in the opposite direction is as follows: based on the fact that the separation member 510 includes a faraday rotator 51001 and a half-wave plate member 51002; the laser which runs along the reverse direction is polarized by the polarizing element 509 to obtain S polarized light and P polarized light, wherein the P polarized light is subjected to anti-reflection by the polarizing element 509, the S polarized light is highly reflected by the polarizing element 509, the highly reflected S polarized light is sequentially subjected to rotation processing by the half-wave plate element 51002 and the Faraday optical rotator 51001 to be changed into polarized light in the same direction as the P polarized light and then is transmitted out by the polarizing element 509, and therefore, the increase of the intra-cavity loss of the laser which runs along the reverse direction is realized, so that a guarantee is provided for realizing the unidirectional oscillation running of the laser in the cavity, namely forming a unidirectional running annular laser oscillation light path, further the spatial hole burning effect is effectively inhibited, and the efficient generation and single-frequency output of the frequency doubling laser target narrow linewidth ultraviolet laser, namely the narrow linewidth ultraviolet laser with the wavelength of 261nm are ensured.
Example 6
As shown in fig. 20 to 25, the basic structure configuration and basic application of the narrow-linewidth ultraviolet laser of the present invention are the same as those of embodiment 5, specifically, as shown in fig. 20 to 25, in the laser oscillation structure 5, the polarizing element 509 is a polarizing plate.
In the above embodiment, in order to obtain the target narrow linewidth uv laser with high efficiency, preferably, the polarizing element 509 is a polarizer for fundamental laser light; the polarization element 509 is coated with a high reflection film and an antireflection film. Preferably, the polarizing element 509 is a polarizer for fundamental laser light with a wavelength of 522nm, the fundamental laser light is polarized by the polarizing element 509 to generate S-polarized light and P-polarized light with a wavelength of 522nm, more preferably, the coating angle of the polarizing element 509 is 45 ° or 55.6 °, and preferably, the polarizing element 509 is coated with a 55.6 ° 522nm S-polarized light high reflection film and a 55.6 ° 522nm P-polarized light antireflection film (i.e., 55.6 ° HR @522nmS light &55.6 ° HT @522nmP light), thereby realizing that the polarizing element 509 can highly reflect S-polarized light with a wavelength of 522nm and antireflection for P-polarized light with a wavelength of 522nm, and both the incident angle and the reflection angle of the S-polarized light with a wavelength of 522nm and the P-polarized light with a wavelength of 522nm on the polarizing element 509 are 55.6 °.
In general, it can be seen from the above embodiments of the present invention that the present invention uses an innovative ring cavity structure compared to the existing narrow linewidth uv laserThe design makes the whole volume of laser instrument more miniaturized, and can effectively improve the efficiency of narrow linewidth ultraviolet laser output, strengthens the operating stability, more is suitable for and uses in the field that the high accuracy required. Especially, compared with the prior art which applies more full-solid-state narrow-linewidth ultraviolet lasers mainly providing narrow-linewidth ultraviolet lasers with 266nm wavelength, the narrow-linewidth ultraviolet laser provided by the invention has the advantages of outstanding small volume, light weight, compact structure, high conversion efficiency and the like; particularly, the former is usually a laser based on an Nd-doped crystal, and 2 times of nonlinear frequency conversion is needed from pump light with a wavelength of 1064nm to narrow-linewidth ultraviolet laser with a wavelength of 266nm, so that the structure of the laser is complicated, and the application operation of the laser is correspondingly complicated and difficult; in addition, when the 444 +/-1 nm blue light LD is used as a pumping source, the invention also has the advantages of obviously reducing the cost, simplifying the structure, reducing the volume and the like; in addition, the invention adopts Pr-doped material with unobvious thermal effect and higher conversion efficiency3+When the fluoride is a laser crystal, the emission wavelength of the fluoride in the visible light range is 522nm, so that the target narrow-linewidth ultraviolet laser output can be obtained only by one-time nonlinear frequency conversion, the structure of the laser is further simplified, and the volume of the laser is favorably reduced; particularly, the laser oscillation structure adopts a ring cavity structure, so that the output stability can be greatly improved, the target narrow-linewidth ultraviolet laser is generated and output by using a unidirectional ring oscillation light path, and single-frequency output is realized, so that the narrow-linewidth ultraviolet laser can be more suitable for the field with high requirement on wavelength precision. In a word, the miniaturized narrow-linewidth ultraviolet laser provided by the invention provides narrow-linewidth ultraviolet laser with shorter wavelength, namely, the narrow-linewidth ultraviolet laser with the wavelength of 261nm, is more beneficial to energy concentration, and the resolution is improved, so that the miniaturized narrow-linewidth ultraviolet laser is suitable for popularization and application in the fields with high requirements on wavelength precision, such as fluorescence absorption, Raman spectroscopy, gene detection, biochemical engineering, space optical communication, medical treatment and the like.
The present invention is not limited to the above-described embodiments, and any obvious modifications or alterations to the above-described embodiments may be made by those skilled in the art without departing from the spirit of the present invention and the scope of the appended claims.
Claims (12)
1. A narrow linewidth ultraviolet laser, comprising a pump source and a laser oscillation structure, wherein:
the pumping source is used for providing pumping light for the laser oscillation structure;
the laser oscillation structure comprises a crystal and a resonant cavity and is used for absorbing the pumping light and generating ultraviolet laser;
the resonant cavity of the laser oscillation structure is an annular cavity structure, and a unidirectional annular laser oscillation light path is formed in the laser oscillation structure and is used for outputting narrow-linewidth ultraviolet laser;
the wavelength of the narrow-linewidth ultraviolet laser is 261 nm.
2. The narrow linewidth UV laser of claim 1,
the laser oscillation structure comprises two groups of crystals which are respectively a first crystal and a second crystal; the first crystal is used for absorbing the pump light and generating fundamental laser; the second crystal is used for carrying out frequency conversion on the fundamental frequency laser and generating frequency doubling laser;
the laser oscillation structure comprises a resonant cavity which has two structures, namely a three-mirror annular cavity structure and a four-mirror annular cavity structure; the laser oscillator is used for forming a unidirectional ring laser oscillation light path and ensuring the output of narrow-linewidth ultraviolet laser;
the two groups of pump sources are respectively a first pump source and a second pump source; the first pumping source and the second pumping source are respectively positioned at two sides of the laser oscillation structure; the first pump source and the second pump source respectively provide pump light for the first crystal.
3. The narrow linewidth ultraviolet laser of claim 2, wherein the three mirror ring cavity structure comprises a cavity mirror, an F-P etalon, an isolation element, an output mirror, wherein,
the three groups of cavity mirrors are respectively a first cavity mirror, a second cavity mirror and a third cavity mirror;
the first crystal is arranged between the first cavity mirror and the second cavity mirror;
the second crystal is arranged between the third cavity mirror and the output mirror;
the output mirror is arranged between the second crystal and the second cavity mirror;
the F-P etalon and the separation element are sequentially arranged between the first cavity mirror and the third cavity mirror.
4. The narrow linewidth UV laser of claim 3,
the first crystal is arranged at the midpoint of a connecting line of the first cavity mirror and the second cavity mirror;
the third cavity mirror is arranged on a perpendicular bisector of a connecting line of the first cavity mirror and the second cavity mirror.
5. The narrow line width uv laser of claim 3, wherein the first cavity mirror and the second cavity mirror are coated at the same angle;
the coating angle of the third cavity mirror is set according to the following formula (1):
in the formula (I), the compound is shown in the specification,
θ1the coating angles of the first cavity mirror and the second cavity mirror are set;
θ2is the film plating angle of the third cavity mirror.
6. The narrow line width uv laser of claim 5, wherein the mutual distance between the first cavity mirror, the second cavity mirror and the third cavity mirror is set according to the following equation (2):
in the formula (I), the compound is shown in the specification,
l1 is the distance between the first and second cavity mirrors;
l2 is the distance between the second cavity mirror and the third cavity mirror;
l3 is the distance between the first cavity mirror and the third cavity mirror.
7. The narrow linewidth ultraviolet laser of claim 2, wherein the four mirror ring cavity structure comprises a cavity mirror, an F-P etalon, an isolation element, a polarization element, wherein,
the four groups of cavity mirrors are respectively a first cavity mirror, a second cavity mirror, a third cavity mirror and a fourth cavity mirror;
the first crystal is arranged between the first cavity mirror and the second cavity mirror;
the second crystal is arranged between the third cavity mirror and the fourth cavity mirror;
the F-P etalon is arranged between the second cavity mirror and the third cavity mirror;
the polarization element and the isolation element are sequentially arranged between the third cavity mirror and the second crystal.
8. The narrow linewidth ultraviolet laser of claim 7,
the first crystal is arranged at the midpoint of a connecting line of the first cavity mirror and the second cavity mirror;
the second crystal is arranged at the midpoint of a connecting line of the third cavity mirror and the fourth cavity mirror;
the distance between the first cavity mirror and the fourth cavity mirror is equal to the distance between the second cavity mirror and the third cavity mirror.
9. The narrow line width uv laser of claim 7, wherein the first, second, third and fourth cavity mirrors have the same coating angle.
10. The narrow linewidth ultraviolet laser of claim 9,
the mutual distances among the first cavity mirror, the second cavity mirror, the third cavity mirror and the fourth cavity mirror are set according to the following formula (3):
in the formula (I), the compound is shown in the specification,
l1 is the distance between the first and second cavity mirrors;
l2 is the distance between the second cavity mirror and the third cavity mirror;
l3 is the distance between the third and fourth cavity mirrors;
l4 is the distance between the first and fourth cavity mirrors;
theta is the coating angle of the first cavity mirror, the second cavity mirror, the third cavity mirror and the fourth cavity mirror.
11. The narrow linewidth UV laser according to any of claims 1 to 10,
the pumping source is a semiconductor laser, and the wavelength of the pumping light is 444 +/-1 nm;
the first crystal is any one of Pr, YLF crystal, Pr, LLF crystal and Pr, GdLiF crystal;
the second crystal is any one of BBO crystal, CLBO crystal, PP-LBGO crystal, KABO crystal, KBBF crystal and RBBF crystal.
12. The narrow linewidth ultraviolet laser of any one of claims 1 to 10, wherein the narrow linewidth ultraviolet laser is a single frequency laser.
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