CN114141687A - 一种晶圆薄化前贴胶的方法 - Google Patents

一种晶圆薄化前贴胶的方法 Download PDF

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CN114141687A
CN114141687A CN202111627443.XA CN202111627443A CN114141687A CN 114141687 A CN114141687 A CN 114141687A CN 202111627443 A CN202111627443 A CN 202111627443A CN 114141687 A CN114141687 A CN 114141687A
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叶顺闵
林伯璋
蔡孟霖
萧维彬
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Chuzhou Yushun Enterprise Management Consulting Partnership LP
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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Abstract

本发明属于半导体制造技术领域，具体涉及一种晶圆薄化前贴胶的方法，包括在ICQ检测后增加超纯水清洗步骤，在贴胶时用N2枪吹拭晶圆表面确保在贴胶时晶圆表面没有粉尘微粒，贴胶时采用贴胶机进行贴胶，所述贴胶机包括真空吸盘；此发明能增加贴UV胶带与蓝膜胶带附着在晶圆上有效性,促进产品生产过程更有效的保护晶圆正面电路层。

Description

一种晶圆薄化前贴胶的方法
技术领域
本发明属于半导体制造技术领域，具体的讲涉及一种晶圆薄化前贴胶的方法。
背景技术
现今半导体技术与日俱进，而未来的集成电路趋势是藉由将晶圆研磨薄化以达成后续封装制程能将数个薄化芯片堆叠封装包覆，且晶圆薄化更可让芯片实现低功率与低导通阻抗的优点，不仅有效延长产品寿命，更有效提升使用上的效率。
其中现有技术的晶圆背面减薄与晶圆背面金属化工艺流程如下：在客户产品进厂后会在IQC站点做检测晶圆外观以及晶圆刮伤的检测,检测无异常进到厂内开始晶圆背面加工程序客户端晶圆入厂＝>IQC检测＝>贴胶＝>研磨(晶圆背面减薄)＝>化学槽(抛光)＝>化学槽(清洗)＝>IPA干燥＝>撕胶＝>PQC检测＝>烤箱保存＝>蒸镀(背面金属化)＝>OQC检测＝>出厂；
在晶圆减薄制程前需要将正面电路层用UV胶带或蓝膜胶带贴在上面确保后续在晶圆减薄以及减薄后抛光、清洗等工序中晶圆正面的保护作用，在贴胶时UV胶带或蓝膜没有确实附着在晶圆表面上，有起泡的状况时晶圆正面金属层保护机制不佳，在化学槽容易有渗酸问题，导致工序异常造成产品报废。
发明内容
为解决现有技术存在的问题，本发明提供一种晶圆薄化前贴胶的方法。该方法可增加贴UV胶带与蓝膜胶带附着在晶圆上有效性,促进产品生产过程更有效的保护晶圆正面电路层。
本发明的技术方案是这样实现的：
一种晶圆薄化前贴胶的方法，包含如下步骤：
A、在ICQ检测后增加超纯水清洗步骤，将晶圆表面上可能的残留的粉尘颗粒清洗掉，后续将晶圆表面残留水滴用IPA干燥工序或N2枪吹干；
B、在贴胶时用N2枪吹拭晶圆表面确保在贴胶时晶圆表面没有粉尘微粒,确保UV胶带或蓝膜胶带与晶圆接合时有效附着；
C、贴胶时采用贴胶机进行贴胶，所述贴胶机包括真空吸盘，所述真空吸盘上表面设有蚊香状的加热线圈。
进一步地，真空吸盘上沿半径方向设有若干个间歇设置于加热线圈缝隙处的温度传感器。
进一步地，加热线圈温度设定控制在50-60度。
本方案的工作原理和效果如下：
本发明与现有技术有益效果如下：
1、在ICQ检测后增加超纯水清洗步骤，晶圆从客户端到进厂内过程多多少少会有粉尘微粒附着在晶圆上,增加超纯水清洗将晶圆先清洗一次,确保晶圆在没有粉尘微粒情况下进行晶圆背面加工工序,让加工过程更为流畅；将晶圆表面上可能的残留的粉尘颗粒清洗掉，后续将晶圆表面残留水滴用IPA干燥工序或N2枪吹干,能有效防止水气残留导致贴胶时UV胶带(紫外线照射胶带)与蓝膜胶带附着效能降低。
2、在贴胶时用N2枪吹拭晶圆表面确保在贴胶时晶圆表面没有粉尘微粒,确保UV胶带或蓝膜胶带与晶圆接合时有效附着；
3、贴胶时采用贴胶机进行贴胶，所述贴胶机包括真空吸盘，所述真空吸盘上表面设有蚊香状的加热线圈；辅助贴蓝膜胶带(电子级胶带)与晶圆附着效果更好,在真空吸盘设置加热线圈温度设定在50-60度,晶圆放置在真空吸盘上热能由晶圆背面传达到晶圆表面,贴蓝膜胶带(电子级胶带)时晶圆在高温下会比在常温下附着的效果更好,蓝膜胶带(电子级胶带)会受温度影响黏着度会变化,如果温度设置太高则会导致在撕胶时有残胶产生。
附图说明
图1为本发明实施例1的流程示意图；
图2是本方案步骤B的操作流程示意图；
图3是本你方案步骤C的操作流程示意图。
附图标记：真空吸盘1、晶圆2、N2枪3、蓝膜胶带4、加热线圈5、温度传感器6。
具体实施方式
下面将结合本发明实施例中的附图对本发明实施例中的技术方案进行清楚、完整的描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要说明，本发明实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
另外，在本发明中涉及“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本发明要求的保护范围内。
实施例1
如图1-3所示，一种晶圆薄化前贴胶的方法，包含如下步骤：
A、在ICQ检测后增加超纯水清洗步骤，将晶圆2表面上可能的残留的粉尘颗粒清洗掉，后续将晶圆2表面残留水滴用IPA干燥工序或N2枪吹干；
B、在贴胶时用N2枪3吹拭晶圆2表面确保在贴胶时晶圆2表面没有粉尘微粒,确保UV胶带或蓝膜胶带4与晶圆2接合时有效附着；
C、贴胶时采用贴胶机进行贴胶，所述贴胶机包括真空吸盘1，所述真空吸盘1上表面设有蚊香状的加热线圈5。
所述真空吸盘1上沿半径方向设有若干个间歇设置于加热线圈5缝隙处的温度传感器6。
所述加热线圈5温度设定控制在50-60度。
本方案实施时将带来以下有益效果：在晶圆2进厂后ICQ品检完增加超纯水清洗，让晶圆2在后续工序流程更优化；在贴胶时先用氮气(N2)枪，将表面可能残留的粉尘微粒在清洁一次，贴胶时可让UV胶带(紫外线照射胶带)和蓝膜胶带4(电子级胶带)，更好贴合在晶圆2上；贴胶机真空吸盘1增加线圈加热温度控制在50～60度，增加蓝膜胶带4(电子级胶带)粘度，让胶带与晶圆2贴合度更好，保护作用更佳。
最后说明的是，以上实施例仅用以说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的宗旨和范围，其均应涵盖在本发明的权利要求范围当中。

Claims (3)

1.一种晶圆薄化前贴胶的方法，其特征在于，包含如下步骤：
A、在ICQ检测后增加超纯水清洗步骤，将晶圆表面上可能的残留的粉尘颗粒清洗掉，后续将晶圆表面残留水滴用IPA干燥工序或N2枪吹干；
B、在贴胶时用N2枪吹拭晶圆表面确保在贴胶时晶圆表面没有粉尘微粒,确保UV胶带或蓝膜胶带与晶圆接合时有效附着；
C、贴胶时采用贴胶机进行贴胶，所述贴胶机包括真空吸盘，所述真空吸盘上表面设有蚊香状的加热线圈。
2.根据权利要求1所述的一种晶圆薄化前贴胶的方法，其特征在于，所述真空吸盘上沿半径方向设有若干个间歇设置于加热线圈缝隙处的温度传感器。
3.根据权利要求1所述的一种晶圆薄化前贴胶的方法，其特征在于，所述加热线圈温度设定控制在50-60度。
CN202111627443.XA 2021-12-28 2021-12-28 一种晶圆薄化前贴胶的方法 Pending CN114141687A (zh)

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