CN114137794A - 一种gdsii格式的集成电路版图数据的处理方法及计算机存储介质 - Google Patents
一种gdsii格式的集成电路版图数据的处理方法及计算机存储介质 Download PDFInfo
- Publication number
- CN114137794A CN114137794A CN202111339985.7A CN202111339985A CN114137794A CN 114137794 A CN114137794 A CN 114137794A CN 202111339985 A CN202111339985 A CN 202111339985A CN 114137794 A CN114137794 A CN 114137794A
- Authority
- CN
- China
- Prior art keywords
- traversal
- point
- vertex
- coordinates
- recorded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111339985.7A CN114137794A (zh) | 2021-11-12 | 2021-11-12 | 一种gdsii格式的集成电路版图数据的处理方法及计算机存储介质 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111339985.7A CN114137794A (zh) | 2021-11-12 | 2021-11-12 | 一种gdsii格式的集成电路版图数据的处理方法及计算机存储介质 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114137794A true CN114137794A (zh) | 2022-03-04 |
Family
ID=80392885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111339985.7A Pending CN114137794A (zh) | 2021-11-12 | 2021-11-12 | 一种gdsii格式的集成电路版图数据的处理方法及计算机存储介质 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN114137794A (zh) |
-
2021
- 2021-11-12 CN CN202111339985.7A patent/CN114137794A/zh active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4282051B2 (ja) | 半導体集積回路製造用マスクパターンデータ生成方法およびその検証方法 | |
US7454302B2 (en) | Method of inspecting integrated circuits during fabrication | |
US9009633B2 (en) | Method of correcting assist feature | |
JP4817746B2 (ja) | 半導体装置の設計データ処理方法、そのプログラム、及び半導体装置の製造方法 | |
US20080004852A1 (en) | Creating method of simulation model, manufacturing method of photo mask, manufacturing method of semiconductor device, and recording medium | |
TWI828263B (zh) | 適用於雙重光刻技術的版圖拆分方法、版圖拆分裝置及電子設備 | |
US20090064085A1 (en) | Method of creating photo mask layout, computer readable recording medium storing programmed instructions for executing the method, and mask imaging system | |
KR20080001438A (ko) | 마스크 레이아웃 제작 방법 | |
US7730445B2 (en) | Pattern data verification method for semiconductor device, computer-readable recording medium having pattern data verification program for semiconductor device recorded, and semiconductor device manufacturing method | |
KR20120007569A (ko) | 포토마스크 형성 방법, 이를 수행하는 프로그래밍된 명령을 저장하는 컴퓨터에서 판독 가능한 저장 매체 및 마스크 이미징 시스템 | |
TWI421908B (zh) | 光學鄰近校正模型的建立方法 | |
JP2005026360A (ja) | フォトマスクの欠陥検査方法、半導体装置の製造方法、およびフォトマスクの製造方法 | |
CN114137794A (zh) | 一种gdsii格式的集成电路版图数据的处理方法及计算机存储介质 | |
US6687885B2 (en) | Correction of layout pattern data during semiconductor patterning process | |
CN114138726A (zh) | 一种针对存在相邻边均相互垂直的多边形的gdsii版图数据的处理方法 | |
JP2007292983A (ja) | 半導体レイアウトパタン検証装置及びマスクパタン生成装置 | |
JP2008020734A (ja) | 半導体装置の設計パターン作成方法、プログラム、及び半導体装置の製造方法 | |
KR100815953B1 (ko) | 오프 그리드 방지를 위한 opc 처리방법 | |
US8141009B2 (en) | Preparing data for hybrid exposure using both electron beam exposure and reticle exposure in lithographic process | |
JP2006235327A (ja) | マスクパターンデータ・マスク検査データ作成方法、及びフォトマスクの製造・検査方法 | |
KR100913327B1 (ko) | 포토 마스크 기록 장치용 마스크 패턴 데이터의 비정상패턴을 검출하는 방법 및 비정상 마스크 패턴 데이터의검출 장치 | |
CN108681205B (zh) | 栅极区域的opc验证方法 | |
CN113064321B (zh) | 一种掩模板的制备方法、存储介质以及设备 | |
JP3470369B2 (ja) | 半導体装置の回路パターン設計方法及び直接描画装置 | |
JP4677760B2 (ja) | 近接効果補正方法、フォトマスク、近接効果補正装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Yue Mengting Inventor after: Liu Meihua Inventor after: Zhang Yan Inventor after: Huang Guoyong Inventor after: Jin Yufeng Inventor after: Bai Geng Inventor before: Yue Mengting Inventor before: Liu Meihua Inventor before: Zhang Yan Inventor before: Huang Guoyong Inventor before: Jin Yufeng |