CN114137280A - Hall effect current sensor - Google Patents
Hall effect current sensor Download PDFInfo
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- CN114137280A CN114137280A CN202111424812.5A CN202111424812A CN114137280A CN 114137280 A CN114137280 A CN 114137280A CN 202111424812 A CN202111424812 A CN 202111424812A CN 114137280 A CN114137280 A CN 114137280A
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- copper bar
- silicon chip
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
Abstract
The invention discloses a Hall effect current sensor, which comprises a packaging shell, wherein the packaging shell is used for packaging a lead frame, the bottom of the lead frame is provided with a low-impedance copper bar, a sensor silicon chip is arranged on the low-impedance copper bar, an insulating isolation chip is arranged between the low-impedance copper bar and the sensor silicon chip, the contact resistance when the sensor chip is welded with the copper bar is effectively reduced, the heat dissipation area of the sensor is increased, a signal pin is exposed to form a large-area lead welding point, the insulating isolation chip is arranged between the low-impedance copper bar and the sensor silicon chip to realize electromagnetic shielding, the heat dissipation performance of the sensor is increased, the signal-to-noise ratio of the sensor silicon chip is improved, and the current and voltage fluctuation interference of the low-impedance copper bar to the normal work of the sensor silicon chip is reduced.
Description
Technical Field
The invention relates to an integrated circuit packaging structure, in particular to a Hall effect current sensor.
Background
The Hall effect current sensor of single-chip no magnetic core is because of its small, advantage with low costs, uses more and more extensively, and at electric tool, the electric motor car, the market share of converter is more and more high. The sensor chip with the largest use amount at present adopts packages such as SOP8, SOW16 and the like, and is influenced by a chip structure, the resistance of a welding pin and an internal conductor of the chip is large and is about 500-1000 mu omega, in addition, the packaging structure is not beneficial to heat dissipation, and the detection current range is limited to be within 100A. Copper bars and magnetic cores are integrated in products such as ACS770 and the like which are promoted by AllegroMicrosystems in the United states, the resistance of a copper bar lead is about 100 mu omega, the contact area is relatively small, the maximum current is limited to be within 200A, the size is large, the production process is complex, and the production cost is high.
Generally, the current of detecting 300A needs to be realized by matching a 1m omega shunt resistor with a precise operational amplifier, and under the condition of 300A, the heating power of the shunt reaches up to 90W, the temperature is quite high, the stability of a system can be influenced, meanwhile, the efficiency of a driver is also reduced, a sensor chip is close to a current copper bar, and the normal work of the chip is easily interfered by the fluctuation of the current and the voltage of the copper bar.
Disclosure of Invention
The invention aims to solve the technical problems that the internal heat dissipation performance of a sensor is poor, and an internal chip is easily subjected to electromagnetic interference, and aims to provide a Hall effect current sensor, reduce the size of the sensor, increase the power density, realize electromagnetic shielding of the internal sensor chip and increase the heat dissipation performance of the sensor.
The invention is realized by the following technical scheme:
the Hall effect current sensor comprises an encapsulation shell, wherein the encapsulation shell is used for encapsulating a lead frame, the bottom of the lead frame is provided with a low-impedance copper bar, a sensor silicon chip is arranged on the low-impedance copper bar, and an insulation isolation chip is arranged between the low-impedance copper bar and the sensor silicon chip.
The invention arranges the packaging shell for packaging the lead frame, effectively reduces the contact resistance when the sensor chip is welded with the copper bar, the bottom of the lead frame is provided with the low-impedance copper bar, increases the heat dissipation area of the sensor, the sensor silicon chip is arranged on the low-impedance copper bar, the insulation isolation chip is arranged between the low-impedance copper bar and the sensor silicon chip, so as to realize the electrical insulation between the sensor silicon chip and the copper bar, in order to improve the signal-to-noise ratio of the sensor silicon chip, the sensor silicon chip needs to be close to the low-impedance copper bar as much as possible to obtain the maximum magnetic field, however, the problem that the normal operation of the sensor silicon chip is easily interfered by the fluctuation of the current and the voltage of the low-impedance copper bar after the sensor silicon chip and the low-impedance copper bar are close to each other exists, and an electromagnetic shielding layer needs to be arranged on the insulating isolation chip between the low-impedance copper bar and the sensor silicon chip to protect the sensor silicon chip from normally operating.
As a further description of the invention, the bottom of the packaging shell is provided with an opening, the signal pins extend out of the packaging shell through the opening arranged at the bottom of the packaging shell, and the part of the signal pins which does not extend out of the packaging shell is connected with the sensor silicon chip through a binding wire. The signal pins extend out of the packaging shell through the opening formed in the bottom of the packaging shell to be exposed, a large-area wire welding point is formed, welding contact resistance of the chip and the PCB is effectively reduced, meanwhile, the heat conduction area of the chip is increased, and thermal resistance is reduced.
As a further description of the invention, the insulating isolation chip is a silicon dioxide film, and a metal film is arranged on the surface of the insulating isolation chip. The silicon dioxide film improves the insulating capability of the insulating isolation chip to ensure that the isolation voltage between the copper bar and the silicon chip can reach 4800VRMS, and the metal film is prepared on the surface of the insulating isolation chip and used as an electromagnetic shielding layer to reduce the interference of an electromagnetic field to the sensor silicon chip.
As a further description of the invention, the distance between the edge of the metal film and the edge of the isolation chip is not less than 200um, the corners of the metal film are all provided with round chamfers, and the radius of the chamfers is not less than 50 um. The arrangement of the shape and position of the metal film is used for improving the stability of the isolation voltage.
As a further description of the present invention, the sensor of the sensor silicon chip is a differential hall sensor, a plurality of hall sensing points are disposed on the sensor silicon chip, the hall sensing points are respectively located on two sides of the magnetic gathering portion of the copper bar, and the hall sensing points are located on the surface of the conductor at about 280 um. The anti-interference capability and the common mode rejection capability of noise and external interference are enhanced by arranging the differential Hall sensor, the magnetic coupling degree is improved through the Hall sensing points, and the signal-to-noise ratio of the sensor silicon chip is improved.
As a further description of the invention, the two sides of the metal film are provided with grooves which are concave to the middle point, and the grooves are arranged below the Hall sensing points. The eddy current formed by the metal film under the high-frequency magnetic field is prevented from interfering the normal work of the Hall sensing point of the sensor silicon chip, and the bandwidth of the differential Hall sensor is reduced.
As a further description of the invention, a DAF film is arranged between the low-impedance copper bar and the insulating isolation chip, and a DAF film is arranged between the insulating isolation chip and the sensor silicon chip. The isolation chip and the sensor silicon chip are adhered to the lead frame through the DAF film, so that the stability of internal packaging is improved, and the sensor silicon chip is close to the low-impedance copper bar as much as possible.
As further description of the invention, the insulating isolation chip is provided with three layers which are sequentially made of aluminum, silicon dioxide and silicon, and the insulating isolation chip is obtained by growing a thick oxide layer on the surface of a common silicon wafer, so that the anti-electromagnetic interference capability of the insulating isolation chip is improved.
As a further description of the invention, the lead frame and the sensor silicon chip are encapsulated with a molding compound. A reliable chip is formed by wrapping, and the firmness of the sensor package is enhanced.
As a further description of the present invention, the creepage distance between the low impedance copper bar and the signal conductor is greater than 8.3 mm. The requirement of enhanced isolation withstand voltage is met, and the electrical insulation capability of 4800VRMS is realized.
Compared with the prior art, the invention has the following advantages and beneficial effects:
effectively reduce the contact resistance when sensor silicon chip and low impedance copper bar welding, increase heat radiating area, improve electromagnetic shield ability, promote isolation voltage's stability, reduced the sensor volume, help promoting power density, the user of being convenient for uses.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other related drawings can be obtained from these drawings without inventive effort. In the drawings:
FIG. 1 is a side view of a current sensor in an embodiment of the invention;
FIG. 2 is a schematic diagram of an internal structure in an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a lead frame according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a planar structure of an isolated chip according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a bottom surface package structure of a sensor according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a sensor top surface package structure in an embodiment of the invention.
Reference numbers and corresponding part names in the drawings:
the method comprises the following steps of 1-a lead frame, 2-a signal pin, 3-a packaging shell, 4-a binding line, 11-a low-impedance copper bar, 12-an insulating isolation chip, 13-a sensor silicon chip, 131-a Hall sensing point and 14-a DAF film.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
As shown in fig. 1 and fig. 2, the present embodiment provides a hall effect current sensor, which includes a package housing 3, the package housing 3 is used for packaging a lead frame 1, a low-impedance copper bar 11 is disposed at the bottom of the lead frame 1, a sensor silicon chip 13 is disposed on the low-impedance copper bar 11, and an insulating isolation chip 12 is disposed between the low-impedance copper bar 11 and the sensor silicon chip 13. In the prior art, the resistance of a copper bar lead is about 100 mu omega, the contact area is relatively small, the maximum current is limited within 200A, the volume is large, the production process is complex, and the production cost is high, therefore, the low-impedance copper bar 11 is arranged at the bottom of the lead frame 1, the thickness of the copper bar integrated in the low-impedance copper bar 11 reaches 1.27mm, the length is about 0.4mm, the width is about 2.0mm, the on-resistance is as low as 20 mu omega, the contact area of the lead and a PCB is more than 24mm ^2, the measurement loss is low, the heat generation is small, the contact resistance during the sensor welding can be effectively reduced, the contact area of the low-impedance copper bar 11 during the sensor welding is reduced, the thermal resistance of the low-impedance copper bar 11 is lower than 5 ℃/W, the continuous measurement current can reach 300A, the surge impact current can reach 100KA, and the traditional Hall current sensor module and shunt scheme can be replaced, the measurement range of 20-300A is realized, an opening is arranged at the bottom of a packaging shell 3, a signal pin 2 extends out of the packaging shell 3 through the opening arranged at the bottom of the packaging shell 3, the part, which does not extend out of the packaging shell 3, of the signal pin 2 is connected with a sensor silicon chip 13 through a binding line 4, the signal pin 2 is of a trapezoidal structure, the surface area of the signal pin 2 is increased while the occupied area of the signal pin 2 is not increased, a large-area lead welding point is formed, the heat dissipation area of the whole sensor is increased by increasing the welding area, the working performance and the service life of the sensor are improved, meanwhile, the contact resistance when the sensor silicon chip 13 is welded with the signal pin 2 can be effectively reduced, the internal space of the sensor silicon chip 13 is narrow, in order to improve the signal-to-noise ratio of the sensor silicon chip 13, the sensor silicon chip 13 needs to be as close to a copper bar 11 as much as possible during packaging, the sensor silicon chip 13 can obtain the maximum magnetic field, after the sensor silicon chip 13 is close to the low-impedance copper bar 11, the current and voltage fluctuation of the low-impedance copper bar 11 is easy to interfere with the normal work of the sensor silicon chip 13, therefore, the insulating isolation chip 12 is arranged between the low-impedance copper bar 11 and the sensor silicon chip 13 to realize electromagnetic shielding, the condition that the current and voltage fluctuation of the low-impedance copper bar 11 interferes with the normal work of the sensor silicon chip 11 due to the fact that the sensor silicon chip 13 is too close to the low-impedance copper bar 11 is reduced, the sensor silicon chip 13 is connected with the lead frame 1 and the signal pin 2 through the binding wire 4 to increase the stability, the lead frame 1 and the sensor silicon chip 13 are wrapped by plastic packaging materials, a reliable chip is formed through wrapping, and the stability of the sensor is enhanced.
As shown in fig. 3, the structure of the lead frame is sequentially a low-impedance copper bar 11, an insulating isolation chip 12, and a sensor silicon chip 13, a DAF film 14 is arranged between the low-impedance copper bar 11 and the insulating isolation chip 12 to fixedly bond the insulating isolation chip 12 to the low-impedance copper bar 11, the DAF film 14 is arranged between the insulating isolation chip 12 and the sensor silicon chip 13, the insulating isolation chip 12 and the sensor silicon chip 13 are bonded to the lead frame 1 through the DAF film 14, the DAF film 14 is used for bonding the insulating isolation chip 12 and the sensor silicon chip 13 to the low-impedance copper bar 11, so as to reduce the distance between the sensor silicon chip 13 and the low-impedance copper bar 11 as much as possible, and while ensuring the stability of the internal packaging structure, the sensor silicon chip 13 is made to be as close to the low-impedance copper bar 11 as much as possible, and the signal-to-noise ratio of the sensor is improved.
As shown in fig. 4, in order to ensure that the isolation voltage between the low-impedance copper bar 11 and the sensor silicon chip 13 can reach 4800VRMS, a layer of metal film 121 is arranged on the surface of the insulating isolation chip 12 and used as an electromagnetic shielding layer, the insulating induction chip 12 is a silicon dioxide film, the silicon chip can be a silicon dioxide film obtained by silicon oxidation on the surface of the sensor silicon chip 13, the surface of the insulating isolation chip 12 is the metal film 121, the edge distance between the edge of the metal film and the edge of the insulating isolation chip 12 is not less than 200um, the corners of the metal film are all provided with round chamfers, and the radius of the chamfers is not less than 50 um. The silicon chip 13 is a differential Hall sensor, the silicon chip 13 is provided with a plurality of Hall sensing points 131, the Hall sensing points 131 are respectively arranged at two sides of the magnetism gathering part of the low-impedance copper bar 11, the differential Hall sensor responds to the space difference of magnetic fields, the differential magnetic field generated by sensing the current of a lead wire counteracts the external interference passing through the magnetic field, the detection precision is improved by arranging the Hall sensing points 131, the Hall sensing points 131 are positioned on the surface of a conductor by about 280 microns, the magnetic coupling is improved, the signal-to-noise ratio of the sensor is improved, the stability of the isolation voltage is improved, two sides of a metal film 121 arranged on the surface of an insulating isolation chip 12 are provided with grooves which are arranged below the Hall sensing points 131, so that a certain gap is formed below the Hall sensing points 131, the eddy current formed by the metal film under the high-frequency magnetic field is prevented from interfering the normal work of the Hall sensing point 131 of the sensor silicon chip 13, and the bandwidth of the differential Hall sensor is reduced.
In some possible embodiments, the low-impedance copper bar 11 is composed of multiple layers of copper conductors, and the creepage distance between the low-impedance copper bar 11 and the signal pin 2 is greater than 8.3mm, so that the requirement of enhanced isolation and voltage resistance is met, and the 4800V electrical insulation capability is realized.
In some possible embodiments, the isolated chip 12 is provided with three layers, wherein the gas material is aluminum, silicon dioxide and silicon in sequence from top to bottom, and the thickness of the third silicon layer is reduced to enhance the coupling magnetic field of the isolated chip 12.
In some possible embodiments, limiting holes are arranged between the package housing 3 and the lead frame 1 and between the package housing and the signal pin 2, the lead frame 1 and the signal pin 2 are fixed through the limiting holes, and meanwhile the lead frame 1 and the signal pin 2 are connected through the binding wire 4, so that the internal structure of the sensor is prevented from being damaged due to movement, the function is not complete, and the service life of the sensor is prolonged.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The utility model provides a hall effect current sensor, its characterized in that, includes encapsulation shell (3), encapsulation shell (3) are used for encapsulating lead frame (1), the lead frame bottom sets up to low impedance copper bar (11), be provided with sensor silicon chip (13) on low impedance copper bar (11), be provided with insulating isolation chip (12) between low impedance copper bar (11) and sensor silicon chip (13).
2. The Hall effect current sensor according to claim 1, wherein the bottom of the package housing (3) is provided with an opening, the signal pin (2) extends out of the package housing (3) through the opening provided at the bottom of the package housing (3), and the part of the signal pin (2) not extending out of the package housing (3) is connected with the sensor silicon chip (13) through the binding wire (4).
3. The hall effect current sensor of claim 1 wherein the isolating chip (12) is a thin film of silicon dioxide and the surface of the isolating chip (12) is provided with a thin film of metal (121).
4. The Hall effect current sensor according to claim 2, wherein the edge of the metal thin film (121) is not less than 200um away from the edge of the isolated chip (12), and the corners of the metal thin film (121) are rounded off, and the radius of the rounded off corner is not less than 50 um.
5. The Hall effect current sensor according to claim 1, wherein said sensor silicon chip (13) is a differential Hall sensor, said sensor silicon chip (13) is provided with a plurality of Hall sensing points (131), said Hall sensing points (131) are respectively located at two sides of a magnetism gathering portion of said low impedance copper bar (11).
6. The Hall effect current sensor according to claim 5, wherein said metal thin film (121) is provided with grooves recessed towards the midpoint on both sides, said grooves being provided below the Hall sensing point (131).
7. The hall effect current sensor of claim 1, wherein a DAF film (14) is provided between the low impedance copper bar (11) and the isolating chip (12), and a DAF film (14) is provided between the isolating chip (12) and the sensor silicon chip (13).
8. The hall effect current sensor according to claim 1, characterised in that the isolating chip (12) is provided with three layers, in order of material aluminium, silicon dioxide, silicon.
9. The hall effect current sensor of claim 1 wherein the low impedance copper bar (11) and the sensor silicon chip (13) are encapsulated with a molding compound.
10. The hall effect current sensor of claim 1 wherein the creepage distance of the low impedance copper bar (11) to the signal pin (2) is greater than 8.3 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111424812.5A CN114137280A (en) | 2021-11-26 | 2021-11-26 | Hall effect current sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111424812.5A CN114137280A (en) | 2021-11-26 | 2021-11-26 | Hall effect current sensor |
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| CN114137280A true CN114137280A (en) | 2022-03-04 |
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020190703A1 (en) * | 2001-06-15 | 2002-12-19 | Sanken Electric Co., Ltd. | Hall-effect current detector |
| US20060219436A1 (en) * | 2003-08-26 | 2006-10-05 | Taylor William P | Current sensor |
| US20130020660A1 (en) * | 2011-07-22 | 2013-01-24 | Allegro Microsystems, Inc. | Reinforced Isolation for Current Sensor with Magnetic Field Transducer |
| US20130049746A1 (en) * | 2011-08-30 | 2013-02-28 | Infineon Technologies Ag | Semiconductor Chip Package and Method |
| CN106653999A (en) * | 2016-12-22 | 2017-05-10 | 上海南麟电子股份有限公司 | Single-chip Hall current sensor and preparation method thereof |
| US20170222131A1 (en) * | 2016-01-29 | 2017-08-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Hall-effect sensor isolator |
| CN107046021A (en) * | 2017-06-08 | 2017-08-15 | 安徽安努奇科技有限公司 | A kind of chip grade packaging structure and preparation method thereof |
| US20180149677A1 (en) * | 2016-11-29 | 2018-05-31 | Allegro Microsystems, Llc | Systems and Methods for Integrated Shielding in a Current Sensor |
| CN108155157A (en) * | 2016-12-05 | 2018-06-12 | 迈来芯电子科技有限公司 | Integrated circuit package body including lead frame |
| US20190386206A1 (en) * | 2018-06-15 | 2019-12-19 | Infineon Technologies Ag | Current sensor package with continuous insulation |
| CN111146331A (en) * | 2020-04-02 | 2020-05-12 | 宁波中车时代传感技术有限公司 | Packaging structure and packaging method of linear Hall chip |
| US20200357987A1 (en) * | 2019-05-07 | 2020-11-12 | Texas Instruments Incorporated | Hall-effect sensor package with added current path |
| CN112542439A (en) * | 2019-09-23 | 2021-03-23 | 英飞凌科技股份有限公司 | Sensor device with sensor chip and bus bar |
| CN112595874A (en) * | 2020-12-16 | 2021-04-02 | 成都芯进电子有限公司 | High-insulation voltage single-chip current sensor packaging structure |
-
2021
- 2021-11-26 CN CN202111424812.5A patent/CN114137280A/en active Pending
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020190703A1 (en) * | 2001-06-15 | 2002-12-19 | Sanken Electric Co., Ltd. | Hall-effect current detector |
| US20060219436A1 (en) * | 2003-08-26 | 2006-10-05 | Taylor William P | Current sensor |
| US20130020660A1 (en) * | 2011-07-22 | 2013-01-24 | Allegro Microsystems, Inc. | Reinforced Isolation for Current Sensor with Magnetic Field Transducer |
| US20130049746A1 (en) * | 2011-08-30 | 2013-02-28 | Infineon Technologies Ag | Semiconductor Chip Package and Method |
| CN102969446A (en) * | 2011-08-30 | 2013-03-13 | 英飞凌科技股份有限公司 | Semiconductor chip package and method |
| US20170222131A1 (en) * | 2016-01-29 | 2017-08-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Hall-effect sensor isolator |
| US20180149677A1 (en) * | 2016-11-29 | 2018-05-31 | Allegro Microsystems, Llc | Systems and Methods for Integrated Shielding in a Current Sensor |
| CN108155157A (en) * | 2016-12-05 | 2018-06-12 | 迈来芯电子科技有限公司 | Integrated circuit package body including lead frame |
| CN106653999A (en) * | 2016-12-22 | 2017-05-10 | 上海南麟电子股份有限公司 | Single-chip Hall current sensor and preparation method thereof |
| CN107046021A (en) * | 2017-06-08 | 2017-08-15 | 安徽安努奇科技有限公司 | A kind of chip grade packaging structure and preparation method thereof |
| US20190386206A1 (en) * | 2018-06-15 | 2019-12-19 | Infineon Technologies Ag | Current sensor package with continuous insulation |
| US20200357987A1 (en) * | 2019-05-07 | 2020-11-12 | Texas Instruments Incorporated | Hall-effect sensor package with added current path |
| CN112542439A (en) * | 2019-09-23 | 2021-03-23 | 英飞凌科技股份有限公司 | Sensor device with sensor chip and bus bar |
| CN111146331A (en) * | 2020-04-02 | 2020-05-12 | 宁波中车时代传感技术有限公司 | Packaging structure and packaging method of linear Hall chip |
| CN112595874A (en) * | 2020-12-16 | 2021-04-02 | 成都芯进电子有限公司 | High-insulation voltage single-chip current sensor packaging structure |
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