CN114123736A - Semiconductor circuit and application device thereof - Google Patents
Semiconductor circuit and application device thereof Download PDFInfo
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- CN114123736A CN114123736A CN202111281057.XA CN202111281057A CN114123736A CN 114123736 A CN114123736 A CN 114123736A CN 202111281057 A CN202111281057 A CN 202111281057A CN 114123736 A CN114123736 A CN 114123736A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
Abstract
The invention discloses a semiconductor circuit and an application device thereof, wherein the semiconductor circuit comprises a heat dissipation substrate and a plastic package shell for coating the heat dissipation substrate, a plurality of signal pins distributed on two opposite sides of the heat dissipation substrate are welded on the heat dissipation substrate, a high-voltage power integrated circuit and an H-bridge inverter circuit are arranged on the heat dissipation substrate, the high-voltage power integrated circuit is provided with two high-voltage driving signal output ends and two low-voltage driving signal output ends, the two high-voltage driving signal output ends are correspondingly and electrically connected with power tubes of two upper bridge arms of the H-bridge inverter circuit, and the two low-voltage driving signal output ends are respectively and electrically connected with power tubes of two lower bridge arms of the H-bridge inverter circuit. According to the technical scheme, the design difficulty and the cost of the main control board of the single-phase direct current converter are reduced, the anti-interference capability is improved, and the single-phase direct current converter can work more stably and reliably; and only adopt two half-bridges, the cost is lower, two half-bridges make full use of when using, do not have the half-bridge that does not use, avoided the wasting of resources.
Description
Technical Field
The present invention relates to the field of power semiconductors, and more particularly, to a semiconductor circuit and an application device thereof.
Background
The semiconductor circuit is a power driving product combining power electronics and integrated circuit technology, in the manufacturing process, a radiating substrate assembled with all components (including a chip and a resistor-capacitor) and pins is placed in a mold cavity, and a product which is molded into a whole through injection molding and high-temperature curing molding is finally formed, wherein an Intelligent Power Module (IPM) is one type of semiconductor circuit.
At present, the space of the power supply control part of the single-phase direct current converter is small, the main control board mainly adopts a circuit scheme that an H bridge and a drive circuit thereof are formed by single power tube devices, the whole circuit design is complex, the whole area of a PCB is large, the design difficulty is high, the cost is high, and the normal operation is easily influenced by interference. The main control board adopts the scheme that the existing intelligent power module drives the single-phase direct current motor, although the whole area of a PCB of the main control board can be reduced, the intelligent power module is usually used for driving three-phase direct current motor equipment, the three-phase full-bridge power module is adopted inside the main control board, when the single-phase direct current motor works, one half bridge in the three-phase full-bridge power module cannot be utilized, the resource waste is caused, and the cost is higher.
Disclosure of Invention
The invention mainly aims to provide a semiconductor circuit, aiming at simplifying the peripheral circuit design of a single-phase direct current converter, reducing the area of a PCB (printed circuit board) and reducing the overall cost.
In order to achieve the purpose, the semiconductor circuit provided by the invention comprises a heat dissipation substrate and a plastic package shell covering the heat dissipation substrate, wherein a plurality of signal pins distributed on two opposite sides of the heat dissipation substrate are welded on the heat dissipation substrate, a high-voltage power integrated circuit and an H-bridge inverter circuit are arranged on the heat dissipation substrate, the high-voltage power integrated circuit is provided with two high-voltage driving signal output ends and two low-voltage driving signal output ends, the two high-voltage driving signal output ends are correspondingly and electrically connected with power tubes of two upper bridge arms of the H-bridge inverter circuit, and the two low-voltage driving signal output ends are respectively and electrically connected with power tubes of two lower bridge arms of the H-bridge inverter circuit.
Preferably, the heat dissipation substrate further comprises a first bootstrap capacitor and a second bootstrap capacitor which are arranged on the heat dissipation substrate, a bootstrap module is arranged in the high-voltage power integrated circuit, the bootstrap module comprises two charging ends, the high-voltage power integrated circuit is provided with a first high-side floating power supply end, a second high-side floating power supply end, a first high-side floating power supply ground end and a second high-side floating power supply ground end, one of the charging ends is electrically connected with the first high-side floating power supply end, and the other of the charging ends is electrically connected with the second high-side floating power supply end;
the first high-side floating power supply end is electrically connected with a first phase output end of the H-bridge inverter circuit and the first high-side floating power supply ground end through the first bootstrap capacitor, and the second high-side floating power supply end is electrically connected with a second phase output end of the H-bridge inverter circuit and the second high-side floating power supply end through the second bootstrap capacitor.
Preferably, a control signal module is further disposed in the high-voltage power integrated circuit, the bootstrap module includes two switch units, input ends of the two switch units are electrically connected to a power supply end of the high-voltage power integrated circuit, an output end of one switch unit is the charging end, an output end of the other switch unit is the other charging end, and the control signal module is electrically connected to on-off control ends of the two switch units.
Preferably, the switch unit includes a switch tube, a first conducting end of the switch tube is an input end of the switch unit, a second conducting end of the switch tube is an output end of the switch unit, and a trigger end of the switch tube is an on-off control end of the switch unit.
Preferably, the bootstrap module further includes a voltage boost unit, a power supply end of the high voltage power integrated circuit is electrically connected to an input end of the switch unit through the voltage boost unit, the power supply end is electrically connected to a voltage input end of the voltage boost unit, and a voltage output end of the voltage boost unit is electrically connected to an input end of the switch unit.
Preferably, the control signal module is further electrically connected to the voltage boosting unit, and detects a voltage magnitude at a voltage output end of the voltage boosting unit; and during the pre-charging period after the high-voltage power integrated circuit is powered on, the control signal module controls the two switch units to be conducted when detecting that the voltage of the voltage output end of the boosting unit reaches a preset voltage value.
Preferably, the control signal module is further electrically connected to the two low-voltage driving signal output ends, during the pre-charging period, when the control signal module detects that the voltage of the voltage output end of the voltage boosting unit reaches a preset voltage value, the control signal module outputs a conducting signal to the two low-voltage driving signal output ends, and after the pre-charging period, the control signal module outputs opposite pulse driving signals to the two low-voltage driving signal output ends.
Preferably, a delay/enable module is further disposed in the high-voltage power integrated circuit, the delay/enable module has an enable control terminal connected to an enable pin of the high-voltage power integrated circuit, and the delay/enable module is electrically connected to the voltage boost unit; and during the pre-charging period, the delay/enable module controls the enable control end to output a protection signal, and after the delay/enable module delays for a preset time, the signal of the enable control end is closed.
Preferably, all the strong current pins of the semiconductor circuit are arranged on one side of the heat dissipation substrate, and all the weak current pins are arranged on the other side of the heat dissipation substrate.
The invention also provides an application device of the semiconductor circuit, which comprises an MCU and the semiconductor circuit, wherein the semiconductor circuit comprises a heat dissipation substrate and a plastic package shell for coating the heat dissipation substrate, a plurality of signal pins distributed on two opposite sides of the heat dissipation substrate are welded on the heat dissipation substrate, a high-voltage power integrated circuit and an H-bridge inverter circuit are arranged on the heat dissipation substrate, the high-voltage power integrated circuit is provided with two high-voltage driving signal output ends and two low-voltage driving signal output ends, the two high-voltage driving signal output ends are correspondingly and electrically connected with power tubes of two upper bridge arms of the H-bridge inverter circuit, and the two low-voltage driving signal output ends are respectively and electrically connected with power tubes of two lower bridge arms of the H-bridge inverter circuit; the MCU is electrically connected with the high-voltage power integrated circuit.
According to the semiconductor circuit, the high-voltage power integrated circuit and the four-channel driven H-bridge inverter circuit are arranged on the radiating substrate and are wrapped by the plastic package shell in a plastic package mode, so that a single-phase full-bridge integrated power module is formed, the whole size is small, and the anti-interference capability is high; when the single-phase direct-current converter is applied to a main control board of the single-phase direct-current converter, the occupied area is small, the overall area of the main control board is reduced, the design difficulty and the cost of the main control board are reduced, the anti-interference capability is improved, and the single-phase direct-current converter can work more stably and reliably; compared with an intelligent power module with a three-phase full bridge adopted by a main control board of a single-phase direct current converter, the semiconductor circuit only adopts two half bridges, the cost is lower, the two half bridges are fully utilized when in use, unused half bridges do not exist, and the resource waste is avoided.
Drawings
FIG. 1 is a circuit diagram of a semiconductor circuit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a portion of a module connection of a high voltage power integrated circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a portion of a module connection of a high voltage power integrated circuit according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a part of module connections of a high voltage power integrated circuit according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The semiconductor circuit provided by the invention is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc. In the following embodiments of the present invention, collectively referred to as a Modular Intelligent Power System (MIPS).
The embodiment of the invention provides MIPS.
Referring to fig. 1, fig. 1 is a circuit diagram of a MIPS in an embodiment of the present invention.
In this embodiment, the MIPS includes a heat dissipation substrate and a plastic package casing covering the heat dissipation substrate, and a plurality of signal pins distributed on two opposite sides of the heat dissipation substrate are welded on the heat dissipation substrate, including strong current pins and weak current pins. The heat dissipation substrate is made of a metal material, and specifically can be a rectangular plate made of aluminum or other metal materials with good heat dissipation performance; the heat dissipation substrate is provided with a circuit wiring layer, and the circuit wiring layer comprises an insulating layer and conducting layer wires (such as copper sheet wires) formed on the insulating layer; the plastic package shell is a shell for coating each radiating substrate, is formed by injection molding and high-temperature curing, and can be made of a mixture of epoxy resin, phenolic resin, a filling material (silicon dioxide or other solid powder), a release agent, a coloring agent, a flame retardant and other materials; and circuit pins welded on each heat dissipation substrate extend out of the side wall of the plastic package shell.
The heat dissipation substrate is provided with a high-voltage power integrated circuit 10 and an H-bridge inverter circuit 20, and the high-voltage power integrated circuit 10 and the H-bridge inverter circuit 20 are arranged on a conducting layer wiring line of a circuit wiring layer of the heat dissipation substrate. The high-voltage power integrated circuit 10 has two high-voltage driving signal output ends (HO1 and HO2) and two low-voltage driving signal output ends (LO1 and LO2), the two high-voltage driving signal output ends are correspondingly and electrically connected to the power tubes of the two upper bridge arms of the H-bridge inverter circuit 20 to drive and control the on/off of the power tubes of the two upper bridge arms of the H-bridge inverter circuit 20, and the two low-voltage driving signal output ends are respectively and electrically connected to the power tubes of the two lower bridge arms of the H-bridge inverter circuit 20 to drive and control the on/off of the power tubes of the two lower bridge arms of the H-bridge inverter circuit 20.
In the MIPS of the embodiment, the high-voltage power integrated circuit 10 and the four-channel driven H-bridge inverter circuit 20 are arranged on the heat dissipation substrate and are encapsulated by the plastic package casing to form a single-phase full-bridge integrated power module, so that the whole volume is small and the anti-interference capability is strong; when the single-phase direct-current converter is applied to a main control board of the single-phase direct-current converter, the occupied area is small, the overall area of the main control board is reduced, the design difficulty and the cost of the main control board are reduced, the anti-interference capability is improved, and the single-phase direct-current converter can work more stably and reliably; compared with an intelligent power module with a three-phase full bridge adopted by a main control board of a single-phase direct current converter, the MIPS of the embodiment only adopts two half bridges, the cost is lower, the two half bridges are fully utilized when in use, unused half bridges do not exist, and the resource waste is avoided.
Referring to fig. 1, in this embodiment, the MIPS further includes a first bootstrap capacitor C1 and a second bootstrap capacitor C2 disposed on the heat dissipation substrate, a bootstrap module 11 is disposed in the high-voltage power integrated circuit 10, the bootstrap module 11 includes two charging terminals, the high-voltage power integrated circuit 10 has a first high-side floating power supply terminal VB1, a second high-side floating power supply terminal VB2, a first high-side floating power supply ground terminal VS1 and a second high-side floating power supply ground terminal VS2, one charging terminal is electrically connected to the first high-side floating power supply terminal VB1, and the other charging terminal is electrically connected to the second high-side floating power supply terminal VB 2; the first high-side floating power supply terminal VB1 is electrically connected to the first-phase output terminal of the H-bridge inverter circuit 20 and the first high-side floating power supply ground terminal VS1 through a first bootstrap capacitor C1, and the second high-side floating power supply terminal VB2 is electrically connected to the second-phase output terminal of the H-bridge inverter circuit 20 and the second high-side floating power supply terminal VB2 through a second bootstrap capacitor C2. The first bootstrap capacitor C1 and the second bootstrap capacitor C2 are charged through the bootstrap module 11, so that the driving output voltage of the MIPS is increased, and the load carrying capacity of the MIPS is increased.
Referring to fig. 2, fig. 2 is a schematic diagram of a part of module connections of the high voltage power integrated circuit 10 according to an embodiment of the present invention.
In this embodiment, a control signal module 12 is further disposed in the high-voltage power integrated circuit 10, the bootstrap module 11 includes two switch units 111, input ends of the two switch units 111 are electrically connected to a power supply terminal VDD of the high-voltage power integrated circuit 10, an output end of one switch unit 111 is a charging end, an output end of the other switch unit 111 is another charging end, and the control signal module 12 is electrically connected to on-off control ends of the two switch units 111. In the MIPS of this embodiment, the control signal module 12 controls the on/off switching of the switch unit 111 by controlling the signal output to the on/off control terminal of the switch unit 111, so as to respectively control the first bootstrap capacitor C1 and the second bootstrap capacitor C2 to switch between the charging state and the charging stop state.
Further, the switch unit 111 includes a switch tube Q, a first conducting end of the switch tube Q is an input end of the switch unit 111, a second conducting end of the switch tube Q is an output end of the switch unit 111, and a trigger end of the switch tube Q is an on-off control end of the switch unit 111. When the control signal module 12 outputs a first level signal to the trigger end of the switching tube Q, the switching tube Q is turned on, and when the control signal module 12 outputs a second level signal (with a potential opposite to that of the first level signal) to the trigger end of the switching tube Q, the switching tube Q is turned off. In the embodiment, the switch tube Q preferably adopts an LDMOS tube which can resist high voltage, so that the stability is better; of course, in other embodiments, the switch tube Q may also be another type of MOS tube or switch tube (e.g., a triode).
Referring to fig. 3, fig. 3 is a schematic diagram of a part of module connections of the high voltage power integrated circuit 10 according to an embodiment of the present invention.
In this embodiment, the bootstrap module 11 further includes a voltage boosting unit 112, the power supply terminal VDD of the high voltage power integrated circuit 10 is electrically connected to the input terminal of the switch unit 111 through the voltage boosting unit 112, the power supply terminal VDD is electrically connected to the voltage input terminal of the voltage boosting unit 112, and the voltage output terminal of the voltage boosting unit 112 is electrically connected to the input terminal of the switch unit 111. After the voltage of the power supply terminal VDD is boosted by the voltage boosting unit 112, the first bootstrap capacitor C1 and the second bootstrap capacitor C2 are charged, so that the problem of low bootstrap charging voltage of the bootstrap module 11 due to conduction voltage drop of the low-side power tube of the H-bridge inverter circuit 20 and voltage division caused by the conduction high resistance of the switching tube Q of the bootstrap module 11 during the pre-charging period (the low-side power tube is conducted and the high-side power tube is not conducted) after the high-voltage power integrated circuit 10 is powered on is solved. The precharge period is: the high voltage power integrated circuit 10 is powered on for a period of time between the first bootstrap capacitor C1 and the second bootstrap capacitor C2 being charged to a preset desired value.
Further, in this embodiment, the control signal module 12 is electrically connected to the voltage boosting unit 112 to detect the voltage magnitude of the voltage output end of the voltage boosting unit 112; the control signal module 12 is also electrically connected to the two low-voltage driving signal output terminals, respectively. During the pre-charging period after the high voltage power integrated circuit 10 is powered on, the control signal module 12 controls the two switch units 111 to be turned on and outputs a turn-on signal to the two low voltage driving signal output ends when detecting that the voltage of the voltage output end of the voltage boosting unit 112 reaches a preset voltage value; the problem that the boosting unit 112 does not finish boosting to a preset voltage value, the first bootstrap capacitor C1 and the second bootstrap capacitor C2 are charged, so that the bootstrap voltage is too low, and abnormal operation is caused is solved.
Further, after the pre-charge period elapses, the control signal module 12 outputs opposite pulse driving signals to the two low-voltage driving signal output terminals, so as to alternately charge the first bootstrap capacitor C1 and the second bootstrap capacitor C2, and alternately turn on the two half-bridges of the H-bridge inverter circuit 20.
Referring to fig. 4, fig. 4 is a schematic diagram of a module connection of a part of the high voltage power integrated circuit 10 according to an embodiment of the present invention.
In this embodiment, a delay/enable module 13 is further disposed in the high voltage power integrated circuit 10, the delay/enable module 13 has an enable control terminal EN connected to an enable pin of the high voltage power integrated circuit 10, and the delay/enable module 13 is electrically connected to the voltage boost unit 112. During the pre-charging period, the delay/enable module 13 controls the enable control terminal EN to output a protection signal, and after the delay/enable module 13 delays for a preset time period, the signal of the enable control terminal EN is turned off. The protection signal is a level signal, and the protection signal has the function of enabling an external MCU to detect the protection signal fed back by an enable pin of the high-voltage power integrated circuit 10, controlling the high-voltage power integrated circuit 10 to shield the input signal, and during the period, the driving operation is not performed, so that the operation under an undervoltage state is avoided, and the driving operation is ensured to be reliable. During the pre-charging period, when the delay/enable module 13 detects that the voltage of the voltage output end of the voltage boost unit 112 reaches the preset voltage value, the delay is started, after the delay is preset for a preset time, at this time, the first bootstrap capacitor C1 and the second bootstrap capacitor C2 are already charged to the preset expected value, the delay/enable module 13 turns off the signal of the enable control end EN thereof, and the external MCU detects that the signal fed back by the enable pin of the high-voltage power integrated circuit 10 disappears, so as to control the high-voltage power integrated circuit 10 to receive the input signal, and start normal driving operation.
In some embodiments, all the strong current pins of the MIPS are arranged on one side of the heat dissipation substrate and all the weak current pins are arranged on the other side of the heat dissipation substrate. Namely, the strong current pins and the weak point pins of the MIPS are respectively distributed on two opposite sides of the heat dissipation substrate, so that the signal interference of the strong current pins on the weak point pins is effectively avoided, and the MIPS works more stably and reliably.
The invention also provides an application device of the MIPS, such as a single-phase electric rotating machine driving main control board, a variable-frequency electric appliance main control board, or a variable-frequency electric appliance product and the like. The application device of the MIPS includes an MCU and a MIPS, and the specific structure of the MIPS can refer to the above-described embodiments. Wherein, the MCU is electrically connected with the high-voltage power integrated circuit. Since the application apparatus of the MIPS of the present invention adopts all the technical solutions of all the embodiments described above, at least all the beneficial effects brought by the technical solutions of the embodiments described above are achieved, and are not described in detail herein.
The above description is only a part of or preferred embodiments of the present invention, and neither the text nor the drawings should be construed as limiting the scope of the present invention, and all equivalent structural changes, which are made by using the contents of the present specification and the drawings, or any other related technical fields, are included in the scope of the present invention.
Claims (10)
1. The semiconductor circuit is characterized by comprising a heat dissipation substrate and a plastic package shell covering the heat dissipation substrate, wherein a plurality of signal pins distributed on two opposite sides of the heat dissipation substrate are welded on the heat dissipation substrate, a high-voltage power integrated circuit and an H-bridge inverter circuit are arranged on the heat dissipation substrate, the high-voltage power integrated circuit is provided with two high-voltage driving signal output ends and two low-voltage driving signal output ends, the two high-voltage driving signal output ends are correspondingly and electrically connected with power tubes of two upper bridge arms of the H-bridge inverter circuit, and the two low-voltage driving signal output ends are respectively and electrically connected with power tubes of two lower bridge arms of the H-bridge inverter circuit.
2. The semiconductor circuit according to claim 1, further comprising a first bootstrap capacitor and a second bootstrap capacitor disposed on the heat-dissipating substrate, wherein a bootstrap module is disposed in the high-voltage power integrated circuit, and the bootstrap module includes two charging terminals, wherein the high-voltage power integrated circuit has a first high-side floating power supply terminal, a second high-side floating power supply terminal, a first high-side floating power supply ground terminal, and a second high-side floating power supply ground terminal, one of the charging terminals is electrically connected to the first high-side floating power supply terminal, and the other of the charging terminals is electrically connected to the second high-side floating power supply terminal;
the first high-side floating power supply end is electrically connected with a first phase output end of the H-bridge inverter circuit and the first high-side floating power supply ground end through the first bootstrap capacitor, and the second high-side floating power supply end is electrically connected with a second phase output end of the H-bridge inverter circuit and the second high-side floating power supply end through the second bootstrap capacitor.
3. The semiconductor circuit according to claim 2, wherein a control signal module is further disposed in the high voltage power integrated circuit, the bootstrap module comprises two switch units, input terminals of the two switch units are electrically connected to a power supply terminal of the high voltage power integrated circuit, an output terminal of one switch unit is the charging terminal, an output terminal of the other switch unit is the other charging terminal, and the control signal module is electrically connected to on-off control terminals of the two switch units.
4. The semiconductor circuit according to claim 3, wherein the switch unit comprises a switch tube, a first conducting terminal of the switch tube is an input terminal of the switch unit, a second conducting terminal of the switch tube is an output terminal of the switch unit, and an activation terminal of the switch tube is an on-off control terminal of the switch unit.
5. The semiconductor circuit according to claim 3, wherein the bootstrap module further comprises a voltage boost unit, a power supply power terminal of the high voltage power integrated circuit is electrically connected with the input terminal of the switch unit through the voltage boost unit, the power supply power terminal is electrically connected with a voltage input terminal of the voltage boost unit, and a voltage output terminal of the voltage boost unit is electrically connected with the input terminal of the switch unit.
6. The semiconductor circuit according to claim 5, wherein the control signal module is further electrically connected to the voltage boosting unit, and detects a voltage level at a voltage output terminal of the voltage boosting unit; and during the pre-charging period after the high-voltage power integrated circuit is powered on, the control signal module controls the two switch units to be conducted when detecting that the voltage of the voltage output end of the boosting unit reaches a preset voltage value.
7. The semiconductor circuit according to claim 6, wherein the control signal module is further electrically connected to the two low voltage driving signal output terminals, respectively, and during the pre-charging period, the control signal module outputs a conducting signal to the two low voltage driving signal output terminals when detecting that the voltage at the voltage output terminal of the voltage boosting unit reaches a preset voltage value, and after the pre-charging period, the control signal module outputs an opposite pulse driving signal to the two low voltage driving signal output terminals.
8. The semiconductor circuit according to claim 6, wherein a delay/enable module is further disposed in the high voltage power integrated circuit, the delay/enable module has an enable control terminal connected to an enable pin of the high voltage power integrated circuit, and the delay/enable module is electrically connected to the voltage boost unit; and during the pre-charging period, the delay/enable module controls the enable control end to output a protection signal, and after the delay/enable module delays for a preset time, the signal of the enable control end is closed.
9. The semiconductor circuit according to any one of claims 1 to 8, wherein all strong current pins of the semiconductor circuit are arranged on one side of the heat dissipation substrate and all weak current pins are arranged on the other side of the heat dissipation substrate.
10. An application device of a semiconductor circuit, comprising a MCU and the semiconductor circuit of any one of claims 1 to 9, wherein the MCU is electrically connected to the high voltage power integrated circuit.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070194834A1 (en) * | 2006-02-15 | 2007-08-23 | Yasuyuki Sohara | Semiconductor integrated circuit |
| CN203368422U (en) * | 2013-06-26 | 2013-12-25 | 深圳市朗驰欣创科技有限公司 | Chip enabling signal delay control circuit |
| CN103683864A (en) * | 2012-08-30 | 2014-03-26 | 英飞凌科技股份有限公司 | Circuit arrangement for driving transistors in bridge circuits |
| CN105827101A (en) * | 2016-05-06 | 2016-08-03 | 成都芯源系统有限公司 | Voltage conversion integrated circuit, bootstrap circuit, and switch driving method |
| CN107147083A (en) * | 2017-06-30 | 2017-09-08 | 广东美的制冷设备有限公司 | SPM and variable frequency drives |
| CN110165872A (en) * | 2019-05-29 | 2019-08-23 | 成都芯源系统有限公司 | Switch control circuit and control method thereof |
| CN111884536A (en) * | 2020-08-06 | 2020-11-03 | 广东汇芯半导体有限公司 | Intelligent power module |
| CN111969879A (en) * | 2020-07-31 | 2020-11-20 | 广东汇芯半导体有限公司 | Intelligent power module of integrated switching power supply |
| EP3767315A1 (en) * | 2019-07-16 | 2021-01-20 | Infineon Technologies Austria AG | Short circuit detection and protection for a gate driver circuit and methods of detecting the same using logic analysis |
| CN112600408A (en) * | 2020-12-02 | 2021-04-02 | 矽力杰半导体技术(杭州)有限公司 | Switch capacitor converter and driving circuit thereof |
-
2021
- 2021-10-29 CN CN202111281057.XA patent/CN114123736B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070194834A1 (en) * | 2006-02-15 | 2007-08-23 | Yasuyuki Sohara | Semiconductor integrated circuit |
| CN103683864A (en) * | 2012-08-30 | 2014-03-26 | 英飞凌科技股份有限公司 | Circuit arrangement for driving transistors in bridge circuits |
| CN203368422U (en) * | 2013-06-26 | 2013-12-25 | 深圳市朗驰欣创科技有限公司 | Chip enabling signal delay control circuit |
| CN105827101A (en) * | 2016-05-06 | 2016-08-03 | 成都芯源系统有限公司 | Voltage conversion integrated circuit, bootstrap circuit, and switch driving method |
| CN107147083A (en) * | 2017-06-30 | 2017-09-08 | 广东美的制冷设备有限公司 | SPM and variable frequency drives |
| CN110165872A (en) * | 2019-05-29 | 2019-08-23 | 成都芯源系统有限公司 | Switch control circuit and control method thereof |
| EP3767315A1 (en) * | 2019-07-16 | 2021-01-20 | Infineon Technologies Austria AG | Short circuit detection and protection for a gate driver circuit and methods of detecting the same using logic analysis |
| CN111969879A (en) * | 2020-07-31 | 2020-11-20 | 广东汇芯半导体有限公司 | Intelligent power module of integrated switching power supply |
| CN111884536A (en) * | 2020-08-06 | 2020-11-03 | 广东汇芯半导体有限公司 | Intelligent power module |
| CN112600408A (en) * | 2020-12-02 | 2021-04-02 | 矽力杰半导体技术(杭州)有限公司 | Switch capacitor converter and driving circuit thereof |
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| CN114123736B (en) | 2023-11-24 |
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