CN114122222A - Composite passivation layer, manufacturing method thereof and LED chip - Google Patents
Composite passivation layer, manufacturing method thereof and LED chip Download PDFInfo
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- CN114122222A CN114122222A CN202111558381.1A CN202111558381A CN114122222A CN 114122222 A CN114122222 A CN 114122222A CN 202111558381 A CN202111558381 A CN 202111558381A CN 114122222 A CN114122222 A CN 114122222A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Abstract
The invention provides a composite passivation layer and a manufacturing method thereof, and an LED chip.A composite passivation layer is arranged on the exposed surface of an epitaxial lamination layer of the LED chip, wherein the composite passivation layer comprises a passivation bottom layer and a passivation top layer which are sequentially stacked, the refractive index of the passivation bottom layer is smaller than that of the passivation top layer, the passivation bottom layer is used for contacting the surface of the LED chip and enabling the LED chip to bear a reverse electric field, and the passivation top layer is used as a film layer of the LED chip contacting the outside and used for reducing holes; thereby improving the high-adverse-pressure resistance and avoiding the infiltration of water vapor.
Description
Technical Field
The invention relates to the field of light emitting diodes, in particular to a composite passivation layer, a manufacturing method thereof and an LED chip.
Background
With the continuous development of the LED display screen market, since the LED display screen is often used in a high-temperature and high-humidity environment, and the internal LED chip is often under reverse pressure, the application end puts a higher demand on the withstand voltage of the small-sized LED chip of the display screen, and the application end usually loads reverse voltage on the chip under 85% humidity and 85 ℃ high-temperature and high-humidity to perform verification (and double 85 reverse pressure reliability experiment). The failure mode in such a severe environment is that after water vapor is accelerated to permeate into the chip at high temperature, the water vapor and the N-type GaN of the chip are subjected to electrochemical reaction under the action of a high reverse electric field to cause burn. At present, a chip is isolated from water vapor through a passivation protective layer (usually made of SiO2) on the surface, so that the water vapor is prevented from permeating into the chip.
However, the conventional passivation layer usually adopts silane (SiH4) and laughing gas (N2O) to react to generate insulating SiO2, and a portion of Si — N bonds (which is shown as a refractive index of about 1.5, and a refractive index of 1.46 for pure SiO2) are inevitably doped in the film layer. The bond energy of Si-N is lower than that of Si-O bond, in the double 85 reverse voltage reliability experiment, because of the reverse strong electric field, a large amount of hot electrons are injected, the hot electrons and the trapped holes accord with the release energy, the bond is broken, the continuous deterioration causes the film layer to crack, and the water vapor infiltration causes failure. Therefore, the Si — N bond in the film needs to be reduced by reducing the gas flow rate ratio of silane/laughing gas, but as the gas flow rate ratio of silane/laughing gas is reduced, the refractive index of the film is continuously reduced to 1.46 or even below 1.46, and at this time, the number of micropores in the film is increased (the refractive index in the micropores is 1, which reduces the refractive index of the entire film), and water vapor is more easily permeated into the passivation layer. Therefore, the refractive index is higher, and the film layer can be broken under the action of a reverse voltage strong electric field, so that water vapor can permeate; the refractive index is too low, and water vapor can permeate through the micro-holes, so that the corrosion of the water vapor to the inside of the chip cannot be avoided.
In view of the above, in order to overcome the above-mentioned defects of the flip LED chip in the prior art, the present inventors have specially designed a composite passivation layer, a method for manufacturing the same, and an LED chip.
Disclosure of Invention
The invention aims to provide a composite passivation layer, a manufacturing method thereof and an LED chip, so as to improve the reverse strong electric field endurance capacity of the LED chip and prevent water vapor from entering.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a composite passivation layer as a protective film layer for a guest, comprising: the passivation bottom layer and the passivation top layer are stacked in sequence, and the refractive index of the passivation bottom layer is smaller than that of the passivation top layer; the passivation bottom layer is used for contacting the surface of the object and enabling the object to resist a reverse electric field, and the passivation top layer is used as a film layer for enabling the object to be in contact with the outside and used for reducing holes.
Preferably, an intermediate layer is further arranged between the passivation bottom layer and the passivation top layer, and the refractive index of the intermediate layer is between that of the passivation bottom layer and that of the passivation top layer, so as to enhance the mutual stress between the passivation bottom layer and the passivation top layer.
Preferably, the refractive index of the passivation bottom layer is 1.40-1.50, inclusive;
the refractive index of the intermediate layer is 1.42-1.52, inclusive;
the refractive index of the passivation top layer is 1.45-1.55, inclusive.
Preferably, the composite passivation layer comprises a transparent insulating material, such as silicon dioxide or the like.
Preferably, the manufacturing method comprises the following steps:
step S01, placing the protection object in a reaction cavity, and keeping the reaction cavity at a preheating temperature;
step S02, introducing mixed gas of silane and laughing gas into the cavity to form a passivation bottom layer, wherein the refractive index of the passivation bottom layer is 1.40-1.50 inclusive;
step S03, increasing the mixing ratio of introduced silane and laughing gas to form an intermediate layer, wherein the refractive index of the intermediate layer is 1.42-1.52, inclusive;
and step S04, increasing the mixing ratio of the introduced silane and the laughing gas again to form a passivation top layer, wherein the refractive index of the passivation top layer is 1.45-1.55, inclusive.
Preferably, in step S02, the mixing ratio of the silane to laughing gas is 2: 320-6: 320, inclusive;
in step S03, the mixing ratio of the silane to the laughing gas is 2: 320-2: 50, including the end points;
in step S04, the mixing ratio of the silane to the laughing gas is 1: 50-2: 50, inclusive.
Preferably, in the steps S02, S03 and S04, nitrogen gas may be further introduced for binding excess oxygen ions.
The invention also provides an LED chip, which is a LED chip with a horizontal structure, comprising:
a substrate;
the epitaxial lamination is arranged on the surface of the substrate and comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction, and a local region of the epitaxial lamination is etched to a part of the first type semiconductor layer to form a groove and a table top; the first direction is perpendicular to the substrate and directed from the substrate to the epitaxial stack;
a first electrode laminated on a part of the surface of the recess and disposed away from a sidewall of the recess;
a second electrode laminated on a part of the surface of the mesa;
a composite passivation layer covering an exposed face of the epitaxial stack; the composite passivation layer comprises the composite passivation layer, the passivation bottom layer is in contact with the exposed surface of the epitaxial lamination layer of the LED chip, and the passivation top layer is used as a film layer of the LED chip in contact with the outside.
Preferably, a transparent conductive layer is further disposed on the mesa, and the composite passivation layer covers the transparent conductive layer.
The invention also provides an LED chip which is a vertical LED chip, comprising:
a conductive substrate;
the epitaxial lamination comprises a second type semiconductor layer, an active region and a first type semiconductor layer which are sequentially stacked along a first direction, wherein the first direction is vertical to the conductive substrate, and the conductive substrate points to the epitaxial lamination;
a first electrode laminated on a surface of the first type semiconductor layer on a side away from the active region;
a second electrode laminated on a back surface of the conductive substrate;
a composite passivation layer covering an exposed face of the epitaxial stack; the composite passivation layer comprises any one of the composite passivation layers, the bottom passivation layer is in contact with the exposed surface of the epitaxial lamination layer of the LED chip, and the top passivation layer is used as a film layer of the LED chip in contact with the outside.
According to the technical scheme, the composite passivation layer and the LED chip provided by the invention are arranged on the exposed surface of the epitaxial lamination layer of the LED chip, wherein the composite passivation layer comprises a passivation bottom layer and a passivation top layer which are sequentially stacked, the refractive index of the passivation bottom layer is smaller than that of the passivation top layer, the passivation bottom layer is used for contacting the surface of the LED chip and enabling the LED chip to bear a reverse electric field, and the passivation top layer is used as a film layer of the LED chip contacting with the outside and used for reducing holes; thereby improving the high-adverse-pressure resistance and avoiding the infiltration of water vapor.
Furthermore, an intermediate layer is arranged between the passivation bottom layer and the passivation top layer, and the refractive index of the intermediate layer is between the passivation bottom layer and the passivation top layer, so that the mutual stress between the passivation bottom layer and the passivation top layer is enhanced, and the protection effect of the composite passivation film layer is improved.
In addition, the refractive index of the passivation bottom layer is 1.40-1.50, so that the passivation bottom layer is in a lower refractive index range, the number of Si-N bonding can be reduced due to the reduction of the refractive index, and the high-reverse pressure resistance is improved; the refractive index of the passivation top layer is 1.45-1.55, so that the passivation top layer is positioned in a higher refractive index interval, the increase of holes of the composite passivation film layer is avoided, and water vapor is prevented from entering; meanwhile, the refractive index of the middle layer is 1.42-1.52, stress transition of the passivation bottom layer and the passivation top layer is well achieved, and the thickness of the film layer is improved.
According to the technical scheme, the manufacturing method of the composite passivation layer provided by the invention has the beneficial effects of the LED chip, and meanwhile, the process is simple and convenient to manufacture, and the production is convenient.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a composite passivation layer provided in embodiment 1 of the present invention;
fig. 2 is a flowchart of a method for fabricating a composite passivation layer according to embodiment 1 of the present invention;
fig. 3 is a schematic structural diagram of an LED chip having a horizontal structure according to embodiment 2 of the present invention;
fig. 4 is a schematic structural diagram of an LED chip with a vertical structure provided in embodiment 3 of the present invention;
the symbols in the drawings illustrate that: 1. the semiconductor device comprises a substrate, 2, a first type semiconductor layer, 3, an active region, 4, a second type semiconductor layer, 5, a transparent conducting layer, 6, a metal reflecting layer, 7, a bonding layer, 8, a composite passivation layer, 81, a passivation bottom layer, 82, a middle layer, 83, a passivation top layer, 9, a second electrode, 10, a first electrode, 11 and a conducting substrate.
Detailed Description
In order to make the content of the present invention clearer, the content of the present invention is further explained below with reference to the attached drawings. The invention is not limited to this specific embodiment. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, embodiment 1 of the present invention is directed to providing a composite passivation layer 8 as a protective film layer for an object, including: a passivation bottom layer 81 and a passivation top layer 83 stacked in sequence, wherein the refractive index of the passivation bottom layer 81 is smaller than that of the passivation top layer 83; the passivation bottom layer 81 is used for contacting the surface of the object and making the object endure a reverse electric field, and the passivation top layer 83 is used as a film layer for contacting the object with the outside and reducing holes.
In this embodiment, an intermediate layer 82 is further disposed between the passivation bottom layer 81 and the passivation top layer 83, and the refractive index of the intermediate layer 82 is between the passivation bottom layer 81 and the passivation top layer 83, so as to enhance the mutual stress between the passivation bottom layer 81 and the passivation top layer 83.
In the embodiment, the refractive index of the passivation bottom layer 81 is 1.40-1.50, inclusive;
the refractive index of the intermediate layer 82 is 1.42-1.52, inclusive;
the index of refraction of the passivation top layer 83 is 1.45-1.55, inclusive.
In the embodiment, the thickness of the passivation bottom layer 81 is 100-5000A, inclusive.
In the embodiment, the thickness of the intermediate layer 82 is 100-5000A, inclusive.
In this embodiment, the passivation top layer 83 has a thickness of 100 to 5000A, inclusive.
In this embodiment, the composite passivation layer 8 includes a transparent insulating material, such as silicon dioxide.
As shown in fig. 2, the present embodiment further provides a manufacturing method of the composite passivation layer 8, where the manufacturing method includes the following steps:
step S01, placing the protection object in a reaction cavity, and keeping the reaction cavity at a preheating temperature;
step S02, introducing mixed gas of silane and laughing gas into the cavity to form a passivation bottom layer, wherein the refractive index of the passivation bottom layer is 1.40-1.50, and the thickness of the passivation bottom layer is 100-5000A (inclusive);
step S03, increasing the mixing ratio of introduced silane and laughing gas to form an intermediate layer, wherein the refractive index of the intermediate layer is 1.42-1.52, and the thickness of the intermediate layer is 100-5000A (inclusive);
and step S04, increasing the mixing ratio of the introduced silane and laughing gas again to form a passivation top layer, wherein the refractive index of the passivation top layer is 1.45-1.55, and the thickness of the passivation top layer is 100-5000A, inclusive.
In this embodiment, in step S02, the mixing ratio of the silane and laughing gas is 2:320 to 6:320, inclusive;
in step S03, the mixing ratio of the silane to the laughing gas is 2: 320-2: 50, including the end points;
in step S04, the mixing ratio of the silane to the laughing gas is 1: 50-2: 50, inclusive.
In this embodiment, in the steps S02, S03, and S04, nitrogen may be introduced to combine excess oxygen ions.
According to the technical scheme, the composite passivation layer provided by the embodiment of the invention comprises a passivation bottom layer and a passivation top layer which are sequentially stacked, the refractive index of the passivation bottom layer is smaller than that of the passivation top layer, the passivation bottom layer is used for contacting the surface of a protection object and enabling the protection object to resist a reverse electric field, and the passivation top layer is used as a film layer for protecting the object and contacting the outside and reducing holes; thereby improving the high-adverse-pressure resistance and avoiding the infiltration of water vapor.
Furthermore, an intermediate layer is arranged between the passivation bottom layer and the passivation top layer, and the refractive index of the intermediate layer is between the passivation bottom layer and the passivation top layer, so that the mutual stress between the passivation bottom layer and the passivation top layer is enhanced, and the protection effect of the composite passivation film layer is improved.
In addition, the refractive index of the passivation bottom layer is 1.40-1.50, so that the passivation bottom layer is in a lower refractive index range, the number of Si-N bonding can be reduced due to the reduction of the refractive index, and the high-reverse pressure resistance is improved; the refractive index of the passivation top layer is 1.45-1.55, so that the passivation top layer is positioned in a higher refractive index interval, the increase of holes of the composite passivation film layer is avoided, and water vapor is prevented from entering; meanwhile, the refractive index of the middle layer is 1.42-1.52, stress transition of the passivation bottom layer and the passivation top layer is well achieved, and the thickness of the film layer is improved.
According to the technical scheme, the manufacturing method of the composite passivation layer provided by the embodiment of the invention has the beneficial effects of the LED chip, and meanwhile, the process is simple and convenient to manufacture, and the production is convenient.
Example 2
As shown in fig. 3, an embodiment of the present invention provides an LED chip, which is a horizontal LED chip, including:
a substrate 1;
the epitaxial lamination is arranged on the surface of the substrate and comprises a first type semiconductor layer 2, an active region 3 and a second type semiconductor layer 4 which are sequentially stacked along a first direction, and a local region of the epitaxial lamination is etched to a part of the first type semiconductor layer 2 to form a groove and a table top; the first direction is perpendicular to the substrate and directed from the substrate to the epitaxial stack;
a first electrode 10 laminated on a part of the surface of the groove and disposed away from the side wall of the groove;
a second electrode 9 laminated on a part of the surface of the mesa;
a composite passivation layer 8 covering the exposed face of the epitaxial stack; the composite passivation layer 8 is the composite passivation layer described in embodiment 1, the passivation bottom layer 81 contacts the exposed surface of the epitaxial lamination layer of the LED chip, and the passivation top layer 93 serves as a film layer of the LED chip contacting the outside.
In this embodiment, a transparent conductive layer 5 is further disposed on the mesa, and the composite passivation layer 8 covers the transparent conductive layer 5.
The second electrode 9 mainly includes a pad portion, and the pad portion is mainly used for external routing in front electrode packaging. The bonding pad of the front electrode can be designed into different shapes, such as a cylinder or a square or other polygons, according to the actual routing requirement. As a preferred embodiment, the front electrode may further include an extension portion extending from the pad, the extension portion may be formed in a predetermined pattern shape, and the extension portion may have various shapes, particularly, a stripe shape.
The first electrode 10 and the second electrode 9 are preferably made of a metal material. The pad portion and the extension portion of the second electrode 9 may further include a metal material that achieves good ohmic contact with the semiconductor epitaxial material.
The epitaxial stack is a semiconductor barrier stack obtained by MOCVD or other growth methods, the semiconductor barrier stack is a semiconductor material capable of providing conventional radiation such as ultraviolet, blue, green, yellow, red, infrared light, and the like, and specifically may be a material of 200 to 950nm, such as a common nitride, specifically, a gallium nitride-based semiconductor barrier stack, and the gallium nitride-based barrier stack is commonly doped with elements such as aluminum, indium, and the like, and mainly provides radiation of 200 to 550nm band; or common AlGaInP-based or AlGaAs-based semiconductor barrier crystal lamination, which mainly provides radiation in the wavelength band of 550-950 nm. The semiconductor barrier lamination mainly comprises a second type semiconductor layer, an active region and a first type semiconductor layer. The first type semiconductor layer and the second type semiconductor layer may be doped n-type or P-type, respectively, to realize a material layer providing at least electrons or holes, respectively. The n-type semiconductor layer may be doped with an n-type dopant such as Si, Ge, or Sn, and the P-type doped semiconductor layer may be doped with a P-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second type semiconductor layer, the active region and the first type semiconductor layer can be made of AlGaInN, GaN, AlGaN, AlGaInP or GaAs or AlGaAs. The second type semiconductor layer and the first type semiconductor layer include a capping layer providing electrons or holes, and may include other layer materials such as a current spreading layer, a window layer, an ohmic contact layer, etc., which are differently arranged in a plurality of layers according to a doping concentration or a composition content. The active region is a region for providing light radiation by electron and hole recombination, different materials can be selected according to different light emitting wavelengths, and the active region can be a periodic structure of a single quantum well or a multi-quantum well. By adjusting the composition ratio of the semiconductor material in the active region, light of different wavelengths is expected to be radiated.
According to the technical scheme, the composite passivation layer is arranged on the exposed surface of the epitaxial lamination layer of the LED chip, wherein the composite passivation layer comprises a passivation bottom layer and a passivation top layer which are sequentially stacked, the refractive index of the passivation bottom layer is smaller than that of the passivation top layer, the passivation bottom layer is used for contacting the surface of the LED chip and enabling the surface of the LED chip to bear a reverse electric field, and the passivation top layer is used as a film layer of the LED chip, which is in contact with the outside, and is used for reducing holes; thereby improving the high-adverse-pressure resistance and avoiding the infiltration of water vapor.
Furthermore, an intermediate layer is arranged between the passivation bottom layer and the passivation top layer, and the refractive index of the intermediate layer is between the passivation bottom layer and the passivation top layer, so that the mutual stress between the passivation bottom layer and the passivation top layer is enhanced, and the protection effect of the composite passivation film layer is improved.
In addition, the refractive index of the passivation bottom layer is 1.40-1.50, so that the passivation bottom layer is in a lower refractive index range, the number of Si-N bonding can be reduced due to the reduction of the refractive index, and the high-reverse pressure resistance is improved; the refractive index of the passivation top layer is 1.45-1.55, so that the passivation top layer is positioned in a higher refractive index interval, the increase of holes of the composite passivation film layer is avoided, and water vapor is prevented from entering; meanwhile, the refractive index of the middle layer is 1.42-1.52, stress transition of the passivation bottom layer and the passivation top layer is well achieved, and the thickness of the film layer is improved.
Example 3
As shown in fig. 4, an embodiment of the present invention provides an LED chip, which is a vertical LED chip, including:
a conductive substrate 11;
the semiconductor device comprises a bonding layer 7, a metal reflector 6 and an epitaxial lamination layer, wherein the bonding layer 7, the metal reflector 6 and the epitaxial lamination layer are arranged on the surface of a conductive substrate 11, the epitaxial lamination layer comprises a second type semiconductor layer 4, an active region 3 and a first type semiconductor layer 2 which are sequentially stacked along a first direction, and the first direction is perpendicular to the conductive substrate 11 and points to the epitaxial lamination layer from the conductive substrate 11;
a first electrode 10 laminated on a surface of the first type semiconductor layer 2 on a side away from the active region 3;
a second electrode 9 laminated on the back surface of the conductive substrate 11;
a composite passivation layer 8 covering the exposed face of the epitaxial stack; the composite passivation layer 8 is the composite passivation layer described in embodiment 1, the passivation bottom layer contacts the exposed surface of the epitaxial lamination layer of the LED chip, and the passivation top layer serves as a film layer of the LED chip contacting the outside.
The second electrode 9 in this embodiment is formed on the back side of the substrate 11 in a full-surface manner, the substrate in this embodiment is a conductive supporting substrate, and the first electrode and the second electrode are formed on both sides of the conductive substrate, so as to realize that current flows vertically through the epitaxial stack, and provide uniform current density.
The first electrode 10 and the second electrode 9 are preferably made of a metal material. The pad portion and the extension portion of the first electrode 9 may further include a metal material that achieves good ohmic contact with the semiconductor epitaxial material.
In this embodiment, the metal mirror may be formed of at least one metal or alloy of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.
The epitaxial stack is a semiconductor barrier stack obtained by MOCVD or other growth methods, the semiconductor barrier stack is a semiconductor material capable of providing conventional radiation such as ultraviolet, blue, green, yellow, red, infrared light, and the like, and specifically may be a material of 200 to 950nm, such as a common nitride, specifically, a gallium nitride-based semiconductor barrier stack, and the gallium nitride-based barrier stack is commonly doped with elements such as aluminum, indium, and the like, and mainly provides radiation of 200 to 550nm band; or common AlGaInP-based or AlGaAs-based semiconductor barrier crystal lamination, which mainly provides radiation in the wavelength band of 550-950 nm. The semiconductor barrier lamination mainly comprises a second type semiconductor layer, an active region and a first type semiconductor layer. The first type semiconductor layer and the second type semiconductor layer may be doped n-type or P-type, respectively, to realize a material layer providing at least electrons or holes, respectively. The n-type semiconductor layer may be doped with an n-type dopant such as Si, Ge, or Sn, and the P-type doped semiconductor layer may be doped with a P-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second type semiconductor layer, the active region and the first type semiconductor layer can be made of AlGaInN, GaN, AlGaN, AlGaInP or GaAs or AlGaAs. The second type semiconductor layer and the first type semiconductor layer include a capping layer providing electrons or holes, and may include other layer materials such as a current spreading layer, a window layer, an ohmic contact layer, etc., which are differently arranged in a plurality of layers according to a doping concentration or a composition content. The active region is a region for providing light radiation by electron and hole recombination, different materials can be selected according to different light emitting wavelengths, and the active region can be a periodic structure of a single quantum well or a multi-quantum well. By adjusting the composition ratio of the semiconductor material in the active region, light of different wavelengths is expected to be radiated.
The first electrode is disposed on the light exit side of the epitaxial stack. The first electrode mainly comprises a pad part, and the pad part is mainly used for external routing during front electrode packaging. The bonding pad of the front electrode can be designed into different shapes, such as a cylinder or a square or other polygons, according to the actual routing requirement. As a preferred embodiment, the front electrode may further include an extension portion extending from the pad, the extension portion may be formed in a predetermined pattern shape, and the extension portion may have various shapes, particularly, a stripe shape.
According to the technical scheme, the composite passivation layer is arranged on the exposed surface of the epitaxial lamination layer of the LED chip, wherein the composite passivation layer comprises a passivation bottom layer and a passivation top layer which are sequentially stacked, the refractive index of the passivation bottom layer is smaller than that of the passivation top layer, the passivation bottom layer is used for contacting the surface of the LED chip and enabling the surface of the LED chip to bear a reverse electric field, and the passivation top layer is used as a film layer of the LED chip, which is in contact with the outside, and is used for reducing holes; thereby improving the high-adverse-pressure resistance and avoiding the infiltration of water vapor.
Furthermore, an intermediate layer is arranged between the passivation bottom layer and the passivation top layer, and the refractive index of the intermediate layer is between the passivation bottom layer and the passivation top layer, so that the mutual stress between the passivation bottom layer and the passivation top layer is enhanced, and the protection effect of the composite passivation film layer is improved.
In addition, the refractive index of the passivation bottom layer is 1.40-1.50, so that the passivation bottom layer is in a lower refractive index range, the number of Si-N bonding can be reduced due to the reduction of the refractive index, and the high-reverse pressure resistance is improved; the refractive index of the passivation top layer is 1.45-1.55, so that the passivation top layer is positioned in a higher refractive index interval, the increase of holes of the composite passivation film layer is avoided, and water vapor is prevented from entering; meanwhile, the refractive index of the middle layer is 1.42-1.52, stress transition of the passivation bottom layer and the passivation top layer is well achieved, and the thickness of the film layer is improved.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A composite passivation layer as a protective film layer for a guest, comprising: the passivation bottom layer and the passivation top layer are stacked in sequence, and the refractive index of the passivation bottom layer is smaller than that of the passivation top layer; the passivation bottom layer is used for contacting the surface of the object and enabling the object to resist a reverse electric field, and the passivation top layer is used as a film layer for enabling the object to be in contact with the outside and used for reducing holes.
2. The composite passivation layer of claim 1, further comprising an intermediate layer disposed between the passivation bottom layer and the passivation top layer, wherein the intermediate layer has a refractive index between the passivation bottom layer and the passivation top layer for enhancing mutual stress between the passivation bottom layer and the passivation top layer.
3. The composite passivation layer of claim 1,
the refractive index of the passivation bottom layer is 1.40-1.50, inclusive;
the refractive index of the intermediate layer is 1.42-1.52, inclusive;
the refractive index of the passivation top layer is 1.45-1.55, inclusive.
4. The composite passivation layer of claim 1, wherein the composite passivation layer comprises a transparent insulating material.
5. The manufacturing method of the composite passivation layer is characterized by comprising the following steps of:
step S01, placing the protection object in a reaction cavity, and keeping the reaction cavity at a preheating temperature;
step S02, introducing mixed gas of silane and laughing gas into the cavity to form a passivation bottom layer, wherein the refractive index of the passivation bottom layer is 1.40-1.50 inclusive;
step S03, increasing the mixing ratio of introduced silane and laughing gas to form an intermediate layer, wherein the refractive index of the intermediate layer is 1.42-1.52, inclusive;
and step S04, increasing the mixing ratio of the introduced silane and the laughing gas again to form a passivation top layer, wherein the refractive index of the passivation top layer is 1.45-1.55, inclusive.
6. The method of fabricating a composite passivation layer of claim 5,
in step S02, the mixing ratio of the silane to the laughing gas is 2: 320-6: 320, including the end points;
in step S03, the mixing ratio of the silane to the laughing gas is 2: 320-2: 50, including the end points;
in step S04, the mixing ratio of the silane to the laughing gas is 1: 50-2: 50, inclusive.
7. The method for fabricating a composite passivation layer according to claim 5, wherein in the steps S02, S03 and S04, nitrogen gas is further introduced for binding excess oxygen ions.
8. An LED chip which is a horizontally structured LED chip, comprising:
a substrate;
the epitaxial lamination is arranged on the surface of the substrate and comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction, and a local region of the epitaxial lamination is etched to a part of the first type semiconductor layer to form a groove and a table top; the first direction is perpendicular to the substrate and directed from the substrate to the epitaxial stack;
a first electrode laminated on a part of the surface of the recess and disposed away from a sidewall of the recess;
a second electrode laminated on a part of the surface of the mesa;
a composite passivation layer covering an exposed face of the epitaxial stack; the composite passivation layer comprises the composite passivation layer as claimed in any one of claims 1 to 4, wherein the bottom passivation layer contacts the exposed surface of the epitaxial lamination layer of the LED chip, and the top passivation layer is used as a film layer for contacting the LED chip with the outside.
9. The LED chip of claim 8, wherein a transparent conductive layer is further disposed on the mesa, and the composite passivation layer covers the transparent conductive layer.
10. An LED chip which is a vertically structured LED chip, comprising:
a conductive substrate;
the epitaxial lamination comprises a second type semiconductor layer, an active region and a first type semiconductor layer which are sequentially stacked along a first direction, wherein the first direction is vertical to the conductive substrate, and the conductive substrate points to the epitaxial lamination;
a first electrode laminated on a surface of the first type semiconductor layer on a side away from the active region;
a second electrode laminated on a back surface of the conductive substrate;
a composite passivation layer covering an exposed face of the epitaxial stack; the composite passivation layer comprises the composite passivation layer as claimed in any one of claims 1 to 4, wherein the bottom passivation layer contacts the exposed surface of the epitaxial lamination layer of the LED chip, and the top passivation layer is used as a film layer for contacting the LED chip with the outside.
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| CN102163675A (en) * | 2010-02-01 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device |
| CN105914280A (en) * | 2016-05-11 | 2016-08-31 | 湘能华磊光电股份有限公司 | LED chip protection layer preparation method and LED chip |
| CN108682727A (en) * | 2018-04-28 | 2018-10-19 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
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