CN114121943B - SCR device with high trigger current and electrostatic discharge circuit structure - Google Patents

SCR device with high trigger current and electrostatic discharge circuit structure Download PDF

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Publication number
CN114121943B
CN114121943B CN202210098555.9A CN202210098555A CN114121943B CN 114121943 B CN114121943 B CN 114121943B CN 202210098555 A CN202210098555 A CN 202210098555A CN 114121943 B CN114121943 B CN 114121943B
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trigger
region
voltage
conductive type
low
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CN114121943A (en
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朱伟东
赵泊然
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JIANGSU YINGNENG MICROELECTRONICS CO Ltd
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Jiangsu Applied Power Microelectronics Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices

Abstract

The invention relates to the technical field of semiconductors, and particularly discloses an SCR device with high trigger current, wherein the SCR device comprises: a first conductive type substrate; a second conductive type well; a low voltage second conductivity type well and a low voltage first conductivity type well; a first N + region and a first P + region; a second N + region and a second P + region; a trigger structure is arranged at the junction position of the low-voltage second conductive type trap and the low-voltage first conductive type trap, and comprises trigger N + regions and trigger P + regions which are alternately arranged; all the trigger N + regions are respectively connected with the first N + region and the first P + region and form an anode metal end of the SCR device after connection; and all the trigger P + regions are respectively connected with the second N + region and the second P + region and form a cathode metal end of the SCR device after connection. The invention also discloses an SCR device with high trigger current and an electrostatic discharge circuit structure. The SCR device with high trigger current provided by the invention can improve the trigger current on the premise of not changing the process.

Description

SCR device with high trigger current and electrostatic discharge circuit structure
Technical Field
The invention relates to the technical field of semiconductors, in particular to an SCR device with high trigger current and an electrostatic discharge circuit structure.
Background
Electrostatic discharge (ESD) is ubiquitous in the processes of manufacturing, packaging, testing and using chips, accumulated static charges are released in a nanosecond-microsecond time by a current of several amperes or dozens of amperes, instantaneous power is up to dozens or hundreds of watts, and the destruction strength of the ESD (electrostatic discharge) to the chips in a circuit system is very high. Statistically, more than 35% of chip failures are due to ESD damage. Therefore, in the design of chips or systems, the design of the esd protection module is directly related to the functional stability of the circuit system and the system reliability, and is very important for electronic products.
For electrostatic protection, the SCR (Silicon Controlled Rectifier) structure (as shown in fig. 1) is a device with the strongest current capability but very easy to be triggered by mistake, and the fundamental reason is that once triggered, the SCR device enters a fast flyback (snapback) region immediately due to the positive feedback effect of the SCR device so as to maintain a very low clamping potential. For some applications (e.g., fast interfaces), however, although a low holding voltage Vh may be acceptable, it is undesirable that the SCR device is so sensitive that noise false triggering could result in the SCR starting. Therefore, increasing the trigger current of the device is an effective method.
There are many methods for increasing the trigger current of the SCR, but the most common method is to increase the base region concentration of the device to increase the current when the device is subjected to conductance modulation to increase the trigger current, or to increase the trigger current by layout. However, these methods have the disadvantage of incompatible processes or having a large influence on other parameters.
Disclosure of Invention
The invention provides an SCR device with high trigger current and an electrostatic discharge circuit structure, which solve the problems of incompatible process and the like caused by increasing the trigger current in the related technology.
As a first aspect of the present invention, there is provided an SCR device having a high trigger current, comprising:
a first conductive type substrate;
a second conductive type well disposed in the first conductive type substrate;
the low-voltage second conductive type trap and the low-voltage first conductive type trap are both positioned in the second conductive type trap and are arranged in a tangent mode;
the first N + region and the first P + region are both positioned in the low-voltage second conductive type trap and are arranged in a tangent mode;
the second N + region and the second P + region are both positioned in the low-voltage first conductive type trap and are arranged in a tangent mode;
the first P + region is close to the second N + region;
a trigger structure is arranged at the junction position of the low-voltage second conductive type trap and the low-voltage first conductive type trap, and comprises trigger N + regions and trigger P + regions which are alternately arranged;
all the trigger N + regions are respectively connected with the first N + region and the first P + region and form an anode metal end of the SCR device after connection;
and all the trigger P + regions are respectively connected with the second N + region and the second P + region and form a cathode metal end of the SCR device after connection.
Furthermore, all the trigger N + regions are respectively connected with the first N + region and the first P + region through contact holes.
Furthermore, all the trigger P + regions are respectively connected with the second N + region and the second P + region through contact holes.
Further, the first conductive type substrate includes a P-type substrate, the second conductive type well includes an N-well, the low voltage second conductive type well includes a low voltage N-well, and the low voltage first conductive type well includes a low voltage P-well.
As another aspect of the present invention, there is provided an SCR device having a high trigger current, comprising:
a first conductive type substrate;
a second conductive type well disposed in the first conductive type substrate;
the low-voltage second conductive type trap and the low-voltage first conductive type trap are both positioned in the second conductive type trap and are arranged in a tangent mode;
the first N + region and the first P + region are both positioned in the low-voltage second conductive type trap and are arranged in a tangent mode;
the second N + region and the second P + region are both positioned in the low-voltage first conductive type trap and are arranged in a tangent mode;
the first P + region is close to the second N + region;
a trigger structure is arranged at the junction position of the low-voltage second conductive type well and the low-voltage first conductive type well, the trigger structure comprises a first trigger P + area and PNP structures symmetrically arranged on two sides of the first trigger P + area, the PNP structures comprise double-strip-type PNP structures and independent PNP structures which are alternately arranged, and the PNP structures close to the first trigger P + area are the double-strip-type PNP structures;
trigger P + areas and trigger N + areas which are arranged in the double-finger-shaped PNP structures and the independent PNP structures in a cutting mode are respectively connected with the first N + areas and the first P + areas and form anode metal ends of the SCR devices after connection;
the first trigger P + area and the independent trigger P + areas in all the independent PNP structures are respectively connected with the second N + area and the second P + area and form a cathode metal end of the SCR device after connection.
Further, the independent PNP structure includes a second trigger N + region and a second trigger P + region that are arranged in a tangent manner, and a third trigger P + region that is arranged at an interval from the second trigger P + region;
the double-strip PNP structure comprises fourth trigger P + areas which are symmetrically arranged on two sides of the fourth trigger N + area by taking the fourth trigger N + area as a center and are tangent to the fourth trigger N + area.
Furthermore, all the double-finger-type PNP structures and all the second trigger N + region and the second trigger P + region are respectively connected with the first N + region and the first P + region through contact holes, and form an anode metal end of the SCR device after connection.
Furthermore, the first trigger P + region and all the third trigger P + regions are respectively connected with the second N + region and the second P + region through contact holes, and form a cathode metal end of the SCR device after connection.
Further, the first conductive type substrate includes a P-type substrate, the second conductive type well includes an N-well, the low voltage second conductive type well includes a low voltage N-well, and the low voltage first conductive type well includes a low voltage P-well.
As another aspect of the present invention, there is provided an electrostatic discharge circuit structure, including: the SCR device with high trigger current described earlier.
According to the SCR device with high trigger current, the trigger N + regions and the trigger P + regions which are alternately arranged are arranged at the junction position of the low-voltage second conductive type trap and the low-voltage first conductive type trap to form a plurality of diodes which are connected in parallel, so that most of current for triggering the SCR device to be started can bypass to the ground instead of a path of the conventional low-voltage second conductive type trap and the conventional low-voltage first conductive type trap, and the emitter junction voltage of parasitic PNP and NPN in the SCR device is not enough to be started under the original current magnitude, so that the trigger current of the whole SCR can be increased on the premise of not changing the process.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a cross-sectional view of a SCR structure in the prior art.
Fig. 2 is a top view of an embodiment of an SCR device with high trigger current provided by the present invention.
Fig. 3 is a top view of another embodiment of an SCR device with high trigger current provided by the present invention.
Fig. 4 is a schematic I-V diagram of an SCR device provided by the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances in order to facilitate the description of the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the present embodiment, an SCR device with a high trigger current is provided, and fig. 2 is a top view of the SCR device with a high trigger current provided according to the embodiment of the present invention, as shown in fig. 2, including:
a first conductivity type substrate 22;
a second conductive-type well 21 disposed in the first conductive-type substrate 22;
the low-voltage second conductive type trap 11 and the low-voltage first conductive type trap 12 are both positioned in the second conductive type trap 21 and are arranged in a tangent mode;
a first N + region 111 and a first P + region 112, both located in the low-voltage second conductive type well 11 and arranged tangentially;
a second N + region 121 and a second P + region 122, both located in the low-voltage first conductive type well 12 and arranged tangentially;
the first P + region 112 is close to the second N + region 121;
a trigger structure is arranged at the junction position of the low-voltage second conductive type well 11 and the low-voltage first conductive type well 12, and the trigger structure comprises trigger N + regions 01 and trigger P + regions 02 which are alternately arranged;
all the trigger N + regions 01 are respectively connected with the first N + region 111 and the first P + region 112, and form an anode metal terminal 30 of the SCR device after connection;
all the trigger P + regions 02 are respectively connected to the second N + region 121 and the second P + region 122, and form the cathode metal terminal 31 of the SCR device after connection.
Taking the direction shown in fig. 2 as an example, the SCR device with high trigger current provided by the embodiment of the present invention is provided with a first trigger N + region 01, a first trigger P + region 02, a second trigger N + region 01, a second trigger P + region 02 … …, an nth trigger N + region 01, and an nth trigger P + region 02 in sequence from top to bottom at the boundary position of the low-voltage second conductive type well 11 and the low-voltage first conductive type well 12, after the whole SCR device is triggered, since the nth trigger N + region and the nth trigger P + region form N diodes connected in parallel, most of the current for triggering the SCR to turn on will be bypassed to the ground by the diodes, so that the voltage drop generated on the low-voltage second conductive type well 11 and the low-voltage first conductive type well 12 under the same total current is not enough to trigger the large injection effect of the SCR device, and therefore a higher trigger current is needed, thereby improving the trigger current of the whole SCR device, and the formed high trigger current is shown as a curve in fig. 4, wherein BV represents the breakdown voltage of the SCR device, It1Indicating the trigger current of the SCR device, more particularly It1Indicating the first trigger current after the SCR device is broken down.
It should be noted that, in the embodiment of the present invention, the trigger structure may include one trigger N + region and one trigger P + region that are alternately arranged, or may also include N trigger N + regions and N trigger P + regions that are alternately arranged, where the number of N (N is a natural number greater than or equal to 1) is set according to needs, and is not limited here.
Therefore, in the SCR device with high trigger current provided in the embodiment of the present invention, the trigger N + region and the trigger P + region alternately arranged are disposed at the boundary position of the low-voltage second conductive type well and the low-voltage first conductive type well to form the diodes connected in parallel, so that most of the current for triggering the turn-on of the SCR device bypasses to the ground instead of the conventional path of the low-voltage second conductive type well and the low-voltage first conductive type well, and thus the emitter junction voltage of the parasitic PNP and NPN in the SCR device is not enough to turn on the SCR device under the original current magnitude, and therefore the trigger current of the whole SCR can be increased without changing the process.
In the embodiment of the present invention, as shown in fig. 2, all the trigger N + regions 01 are connected to the first N + region 111 and the first P + region 112 through the contact holes 40, respectively.
In the embodiment of the present invention, as shown in fig. 2, all the trigger P + regions 02 are respectively connected to the second N + region 121 and the second P + region 122 through the contact holes 40.
Preferably, the first conductive type substrate 22 includes a P-type substrate, the second conductive type well 21 includes an N-well, the low-voltage second conductive type well 11 includes a low-voltage N-well, and the low-voltage first conductive type well 12 includes a low-voltage P-well.
It should be noted that the N-well may be a deep N-well, and taking the direction and structure shown in fig. 2 as an example, the deep N-well is located in the P-type substrate, and the low-voltage N-well and the low-voltage P-well are respectively located at the left side and the right side inside the deep N-well region, and are tangent to each other. The first N + region 111 and the first P + region 112 are respectively located inside the low-voltage N-well and tangent thereto, and the second N + region 121 and the second P + region 122 are respectively located inside the low-voltage P-well and tangent thereto (the N + regions are all located on the left side of the P + regions). The junction of the low-voltage N well and the low-voltage P well is sequentially provided with a first trigger N + region 01, a first trigger P + region 02, a second trigger N + region 01, a second trigger P + region 02 … …, an nth trigger N + region 01 and an nth trigger P + region 02 from top to bottom, wherein the 1 st to nth trigger N + regions are all connected with the first N + region 111 and the first P + region 112 through the contact hole 40 and metal to form an anode metal end 30 of the SCR device. The 1 st to nth trigger P + regions 02 are all connected to the second N + region 121 and the second P + region 122 to form a cathode metal terminal 31 of the SCR device by connecting the contact hole 40 to metal.
As another embodiment of the present invention, there is provided an SCR device having a high trigger current, wherein as shown in fig. 3, the SCR device includes:
a first conductivity type substrate 22;
a second conductive-type well 21 disposed in the first conductive-type substrate 22;
the low-voltage second conductive type trap 11 and the low-voltage first conductive type trap 12 are both positioned in the second conductive type trap 21 and are arranged in a tangent mode;
a first N + region 111 and a first P + region 112, both located in the low-voltage second conductive type well 11 and arranged tangentially;
a second N + region 121 and a second P + region 122, both located in the low-voltage first conductive type well 12 and arranged tangentially;
the first P + region 112 is close to the second N + region 121;
a trigger structure is arranged at the junction position of the low-voltage second conductive type well 11 and the low-voltage first conductive type well 12, the trigger structure comprises a first trigger P + area 10 and PNP structures 20 symmetrically arranged on two sides of the first trigger P + area 10, the PNP structures 20 comprise double-finger-type PNP structures and independent PNP structures which are alternately arranged, and the PNP structures close to the first trigger P + area 10 are the double-finger-type PNP structures;
the trigger P + region and the trigger N + region, which are arranged in the double-finger PNP structures and the independent PNP structures in an intersecting manner, are respectively connected to the first N + region 111 and the first P + region 112, and form the anode metal terminal 30 of the SCR device after the connection;
the first trigger P + region 10 and the independent trigger P + regions in all the independent PNP structures are respectively connected to the second N + region 121 and the second P + region 122, and form the cathode metal terminal 31 of the SCR device after the connection.
According to the SCR device with high trigger current provided by the embodiment of the invention, the multi-finger parallel PNP structure is arranged at the junction position of the low-voltage second conductive type well and the low-voltage first conductive type well, and the principle is similar to that of the embodiment, most of the current for triggering the SCR device to be started can be bypassed to the ground through the multi-finger parallel PNP structure instead of the conventional path of the low-voltage second conductive type well and the low-voltage first conductive type well, so that the emitter junction voltage of parasitic PNP and NPN in the SCR device is not enough to be started under the original current, and the trigger current of the whole SCR can be increased on the premise of not changing the process.
Specifically, as shown in fig. 3, the independent PNP structure includes a second trigger N + region 201 and a second trigger P + region 202 that are arranged tangentially, and a third trigger P + region 203 that is arranged at a distance from the second trigger P + region 202;
the double-finger PNP structure includes fourth trigger P + regions 205 symmetrically disposed on both sides of the fourth trigger N + region 204 and tangent to the fourth trigger N + region.
It should be understood that, taking the direction shown in fig. 3 as an example, at the boundary position of the low-voltage second conductive type well 11 and the low-voltage first conductive type well 12, an independent PNP structure, a dual-finger PNP structure, a first trigger P + region, the dual-finger PNP structure, and the independent PNP structure are sequentially arranged from top to bottom, thus, a multi-finger parallel PNP structure is formed at the interface of the low voltage second conductivity type well 11 and the low voltage first conductivity type well 12, most of the current for triggering SCR on will be shunted to ground by these diodes, thus, the voltage drop generated across the low voltage second conductivity type well 11 and the low voltage first conductivity type well 12 at the same total current is not enough to trigger the large injection effect of the SCR device, so a higher trigger current is required, thereby increasing the trigger current of the entire SCR device, which results in a high trigger current as shown in the graph of fig. 4.
In the embodiment of the present invention, all the dual-finger PNP structures and all the second trigger N + region 201 and the second trigger P + region 202 are respectively connected to the first N + region 111 and the first P + region 112 through the contact hole 40, and after the connection, the anode metal terminal 30 of the SCR device is formed.
In the embodiment of the present invention, the first trigger P + region 10 and all the third trigger P + regions 203 are respectively connected to the second N + region 121 and the second P + region 122 through the contact hole 40, and form the cathode metal terminal 31 of the SCR device after the connection.
Preferably, the first conductive type substrate 22 includes a P-type substrate, the second conductive type well 21 includes an N-well, the low-voltage second conductive type well 11 includes a low-voltage N-well, and the low-voltage first conductive type well 12 includes a low-voltage P-well.
It should be noted that the N-well may be a deep N-well, and taking the direction and structure shown in fig. 3 as an example, the deep N-well is located in the P-type substrate, and the low-voltage N-well and the low-voltage P-well are respectively located at the left side and the right side inside the deep N-well region, and are tangent to each other. The first N + region 111 and the first P + region 112 are respectively located inside the low-voltage N-well and tangent thereto, and the second N + region 121 and the second P + region 122 are respectively located inside the low-voltage P-well and tangent thereto (the N + regions are all located on the left side of the P + regions). A second trigger N + region 201, a second trigger P + region 202 tangent to the second trigger N + region 201, and an independent third trigger P + region 203 are sequentially formed at the boundary of the low-voltage N-well and the low-voltage P-well from top to bottom to form an independent PNP structure. The fourth trigger P + regions 205 symmetrically disposed at both sides of the fourth trigger N + region 204 and tangent to the fourth trigger N + region form a dual-fingered PNP. A plurality of double-finger PNP are designed in the same manner. All the dual-finger PNP structures and all the second trigger N + region 201 and the second trigger P + region 202 are respectively connected to the first N + region 111 and the first P + region 112 through the contact hole 40, and the anode metal terminal 30 of the SCR device is formed after the connection. All the first trigger P + regions 10 and all the third trigger P + regions 203 are respectively connected with the second N + region 121 and the second P + region 122 through the contact holes 40, and after the connection, the cathode metal terminal 31 of the SCR device is formed.
As another embodiment of the present invention, an electrostatic discharge circuit structure is provided, which includes: the SCR device with high trigger current described earlier.
It should be understood that, the electrostatic discharge circuit structure provided by the embodiment of the present invention employs the aforementioned SCR device with high trigger current, so that the holding current can be increased by increasing the bypass path without changing the process, that is, the trigger current of the SCR device can be increased, and thus the noise immunity of the circuit can be improved.
It should be noted that the SCR device with high trigger current is suitable for various snapback ESD devices.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (9)

1. An SCR device having a high trigger current, comprising:
a first conductive type substrate;
a second conductive type well disposed in the first conductive type substrate;
the low-voltage second conductive type trap and the low-voltage first conductive type trap are both positioned in the second conductive type trap and are arranged in a tangent mode;
the first N + region and the first P + region are both positioned in the low-voltage second conductive type trap and are arranged in a tangent mode;
the second N + region and the second P + region are both positioned in the low-voltage first conductive type trap and are arranged in a tangent mode;
the first P + region is close to the second N + region;
a trigger structure is arranged at the junction position of the low-voltage second conductive type trap and the low-voltage first conductive type trap, and comprises trigger N + regions and trigger P + regions which are alternately arranged;
all the trigger N + regions are respectively connected with the first N + region and the first P + region and form an anode metal end of the SCR device after connection;
and all the trigger P + regions are respectively connected with the second N + region and the second P + region and form a cathode metal end of the SCR device after connection.
2. The SCR device of claim 1, wherein all trigger N + regions are connected to the first N + region and the first P + region through contact holes, respectively.
3. The SCR device of claim 1, wherein all trigger P + regions are connected to the second N + region and the second P + region through contact holes, respectively.
4. The SCR device of any of claims 1 to 3, wherein the first conductivity type substrate comprises a P-type substrate, the second conductivity type well comprises an N-well, the low voltage second conductivity type well comprises a low voltage N-well, and the low voltage first conductivity type well comprises a low voltage P-well.
5. An SCR device having a high trigger current, comprising:
a first conductive type substrate;
a second conductive type well disposed in the first conductive type substrate;
the low-voltage second conductive type trap and the low-voltage first conductive type trap are both positioned in the second conductive type trap and are arranged in a tangent mode;
the first N + region and the first P + region are both positioned in the low-voltage second conductive type trap and are arranged in a tangent mode;
the second N + region and the second P + region are both positioned in the low-voltage first conductive type trap and are arranged in a tangent mode;
the first P + region is close to the second N + region;
a trigger structure is arranged at the junction position of the low-voltage second conductive type well and the low-voltage first conductive type well, the trigger structure comprises a first trigger P + area and PNP structures symmetrically arranged on two sides of the first trigger P + area, the PNP structures comprise double-strip-type PNP structures and independent PNP structures which are alternately arranged, and the PNP structures close to the first trigger P + area are the double-strip-type PNP structures;
trigger P + areas and trigger N + areas which are arranged in the double-finger-shaped PNP structures and the independent PNP structures in a cutting mode are respectively connected with the first N + areas and the first P + areas and form anode metal ends of the SCR devices after connection;
the first trigger P + region and the independent trigger P + regions in all the independent PNP structures are respectively connected with the second N + region and the second P + region and form a cathode metal end of the SCR device after connection;
the independent PNP structure comprises a second trigger N + region and a second trigger P + region which are arranged in a tangent mode, and a third trigger P + region which is arranged at an interval with the second trigger P + region;
the double-strip PNP structure comprises fourth trigger P + areas which are symmetrically arranged on two sides of the fourth trigger N + area by taking the fourth trigger N + area as a center and are tangent to the fourth trigger N + area.
6. The SCR device of claim 5, having a high trigger current,
and all the double-finger-type PNP structures and all the second trigger N + area and the second trigger P + area are respectively connected with the first N + area and the first P + area through contact holes and form an anode metal end of the SCR device after connection.
7. The SCR device of claim 5, having a high trigger current,
the first trigger P + region and all the third trigger P + regions are respectively connected with the second N + region and the second P + region through contact holes, and form a cathode metal end of the SCR device after connection.
8. The SCR device of any of claims 5 to 7, wherein the first conductivity type substrate comprises a P-type substrate, the second conductivity type well comprises an N-well, the low voltage second conductivity type well comprises a low voltage N-well, and the low voltage first conductivity type well comprises a low voltage P-well.
9. An electrostatic discharge circuit structure, comprising: an SCR device with a high trigger current as defined in any one of claims 1 to 4 or an SCR device with a high trigger current as defined in any one of claims 5 to 8.
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